EP2381487A4 - Substrate for light-emitting element - Google Patents

Substrate for light-emitting element

Info

Publication number: EP2381487A4
Authority: EP; European Patent Office
Prior art keywords: substrate; light; emitting element; emitting
Prior art date: 2009-01-16
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Withdrawn

Application number

EP09838362.3A

Other languages

German (de)

French (fr)

Other versions

EP2381487A1 (en

Inventor

Akihiro Hachigo

Takao Nakamura

Masashi Yoshimura

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Sumitomo Electric Industries Ltd

Original Assignee

Sumitomo Electric Industries Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2009-01-16

Filing date

2009-11-11

Publication date

2013-07-24

2009-11-11 Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd

2011-10-26 Publication of EP2381487A1 publication Critical patent/EP2381487A1/en

2013-07-24 Publication of EP2381487A4 publication Critical patent/EP2381487A4/en

Status Withdrawn legal-status Critical Current

Links

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds

EP09838362.3A 2009-01-16 2009-11-11 Substrate for light-emitting element Withdrawn EP2381487A4 (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2009007854A JP2010165927A (en)	2009-01-16	2009-01-16	Substrate for light-emitting element
PCT/JP2009/069154 WO2010082396A1 (en)	2009-01-16	2009-11-11	Substrate for light-emitting element

Publications (2)

Publication Number	Publication Date
EP2381487A1 EP2381487A1 (en)	2011-10-26
EP2381487A4 true EP2381487A4 (en)	2013-07-24

Family

ID=42339656

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
EP09838362.3A Withdrawn EP2381487A4 (en)	2009-01-16	2009-11-11	Substrate for light-emitting element

Country Status (6)

Country	Link
US (1)	US20110272734A1 (en)
EP (1)	EP2381487A4 (en)
JP (1)	JP2010165927A (en)
CN (1)	CN102282684A (en)
TW (1)	TW201029234A (en)
WO (1)	WO2010082396A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP6322890B2 (en)	2013-02-18	2018-05-16	住友電気工業株式会社	Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device
CN104641453B (en)	2012-10-12	2018-03-30	住友电气工业株式会社	Group III nitride composite substrate and its manufacture method and the method for manufacturing Group III nitride semiconductor device
US9923063B2 (en)	2013-02-18	2018-03-20	Sumitomo Electric Industries, Ltd.	Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same
WO2016182012A1 (en) *	2015-05-13	2016-11-17	日本碍子株式会社	Alumina sintered body and optical element base substrate
TWI706927B (en) *	2015-09-30	2020-10-11	日商日本碍子股份有限公司	Alumina sintered body and lower substrate for optical components
CN117476831B (en) *	2023-12-20	2024-03-19	青禾晶元(晋城)半导体材料有限公司	LED epitaxial wafer and preparation method thereof, LED chip and preparation method thereof

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR2816445B1 (en) *	2000-11-06	2003-07-25	Commissariat Energie Atomique	METHOD FOR MANUFACTURING A STACKED STRUCTURE COMPRISING A THIN LAYER ADHERING TO A TARGET SUBSTRATE
TW544956B (en) *	2001-06-13	2003-08-01	Matsushita Electric Ind Co Ltd	Nitride semiconductor, production method therefor and nitride semiconductor element
TWI240434B (en) *	2003-06-24	2005-09-21	Osram Opto Semiconductors Gmbh	Method to produce semiconductor-chips
EP1962340A3 (en) *	2004-11-09	2009-12-23	S.O.I. TEC Silicon	Method for manufacturing compound material wafers
JP5042506B2 (en) *	2006-02-16	2012-10-03	信越化学工業株式会社	Manufacturing method of semiconductor substrate
FR2899378B1 (en) *	2006-03-29	2008-06-27	Commissariat Energie Atomique	METHOD FOR DETACHING A THIN FILM BY FUSION OF PRECIPITS
JP5003033B2 (en) *	2006-06-30	2012-08-15	住友電気工業株式会社	GaN thin film bonded substrate and manufacturing method thereof, and GaN-based semiconductor device and manufacturing method thereof
JP4995626B2 (en) *	2007-04-27	2012-08-08	信越化学工業株式会社	Manufacturing method of bonded substrate
JP4458116B2 (en) *	2007-05-30	2010-04-28	住友電気工業株式会社	Group III nitride semiconductor layer bonded substrate for epitaxial layer growth and semiconductor device

2009
- 2009-01-16 JP JP2009007854A patent/JP2010165927A/en active Pending
- 2009-11-11 US US13/144,696 patent/US20110272734A1/en not_active Abandoned
- 2009-11-11 EP EP09838362.3A patent/EP2381487A4/en not_active Withdrawn
- 2009-11-11 WO PCT/JP2009/069154 patent/WO2010082396A1/en active Application Filing
- 2009-11-11 CN CN2009801548260A patent/CN102282684A/en active Pending
- 2009-12-17 TW TW098143448A patent/TW201029234A/en unknown

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
No further relevant documents disclosed *
See also references of WO2010082396A1 *

Also Published As

Publication number	Publication date
CN102282684A (en)	2011-12-14
TW201029234A (en)	2010-08-01
WO2010082396A1 (en)	2010-07-22
EP2381487A1 (en)	2011-10-26
US20110272734A1 (en)	2011-11-10
JP2010165927A (en)	2010-07-29

Legal Events

Date	Code	Title	Description
2011-09-23	PUAI	Public reference made under article 153(3) epc to a published international application that has entered the european phase	Free format text: ORIGINAL CODE: 0009012
2011-10-26	17P	Request for examination filed	Effective date: 20110713
2011-10-26	AK	Designated contracting states	Kind code of ref document: A1 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR
2012-04-25	DAX	Request for extension of the european patent (deleted)
2013-07-24	A4	Supplementary search report drawn up and despatched	Effective date: 20130620
2013-07-24	RIC1	Information provided on ipc code assigned before grant	Ipc: H01L 33/00 20100101AFI20130614BHEP Ipc: C30B 29/40 20060101ALI20130614BHEP Ipc: H01L 21/02 20060101ALI20130614BHEP Ipc: H01S 5/323 20060101ALI20130614BHEP Ipc: C30B 25/18 20060101ALI20130614BHEP Ipc: H01L 21/205 20060101ALI20130614BHEP
2013-12-06	STAA	Information on the status of an ep patent application or granted ep patent	Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN
2014-01-08	18W	Application withdrawn	Effective date: 20131129

Publication	Publication Date	Title
EP2296204A4 (en)	2011-07-27	Light-emitting element
EP2264793A4 (en)	2015-03-18	Light-emitting element
EP2492986A4 (en)	2013-12-11	Organic electroluminescent element
EP2434558A4 (en)	2013-05-01	Organic electroluminescent element
EP2434559A4 (en)	2013-04-24	Organic electroluminescent element
EP2403028A4 (en)	2013-03-20	Organic electroluminescent element
EP2448023A4 (en)	2013-11-27	Light-emitting device
EP2442379A4 (en)	2014-03-05	Organic electroluminescent element
EP2381501A4 (en)	2012-12-19	Organic electroluminescent element
EP2419930A4 (en)	2014-10-22	Through substrate vias
EP2492988A4 (en)	2013-05-15	Organic electroluminescent element
EP2474964A4 (en)	2013-02-20	Device substrate
EP2416628A4 (en)	2013-08-14	Organic electroluminescent element
EP2461390A4 (en)	2015-06-10	Organic electroluminescent element
EP2584616A4 (en)	2015-11-18	Ultraviolet semiconductor light-emitting element
EP2439805A4 (en)	2013-08-21	Organic electroluminescent element
EP2388842A4 (en)	2012-05-30	Organic electroluminescent element
EP2485568A4 (en)	2015-08-26	Organic electroluminescent element
EP2458942A4 (en)	2012-12-26	Organic electroluminescent element
EP2403029A4 (en)	2012-08-08	Organic electroluminescent element
EP2506320A4 (en)	2017-12-06	Substrate for led mounting
EP2421061A4 (en)	2014-07-02	Light-emitting device
EP2403315A4 (en)	2013-03-20	Light-emitting element
EP2403025A4 (en)	2013-12-04	Light-emitting device
GB0904803D0 (en)	2009-05-06	Coated substrate