EP2351109A2 - Procédé de fabrication d'une cellule solaire et cellule solaire - Google Patents

Procédé de fabrication d'une cellule solaire et cellule solaire

Info

Publication number
EP2351109A2
EP2351109A2 EP09783485A EP09783485A EP2351109A2 EP 2351109 A2 EP2351109 A2 EP 2351109A2 EP 09783485 A EP09783485 A EP 09783485A EP 09783485 A EP09783485 A EP 09783485A EP 2351109 A2 EP2351109 A2 EP 2351109A2
Authority
EP
European Patent Office
Prior art keywords
main surface
layer
aluminum
solar cell
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP09783485A
Other languages
German (de)
English (en)
Inventor
Hans-Joachim Krokoszinski
Karsten Meyer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of EP2351109A2 publication Critical patent/EP2351109A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to a method for producing a solar cell from an n-doped semiconductor substrate, in particular made of silicon, which has a first main surface serving as a light incident side in use and a main surface serving as a back surface, with an n + region, front formed in the first main surface Surface Field, and one formed in the second main surface by doping with aluminum p + - emitter. It further relates to a solar cell made of a p-doped semiconductor substrate, in particular of silicon, which has a first main surface serving as a light incident side in use and a second main surface serving as a back, with an n + emitter region formed in the first main surface and one in the second Main surface by doping with aluminum produced p + region, Back Surface Field.
  • Silicon solar cells with a p-base and a n + emitter layer diffused on the front side have been provided on the rear side for many years with an all-over metallization of the rear base region for mirroring and for electronic passivation by means of band bending (Back Surface Field, BSF).
  • BSF Back Surface Field
  • the backside metallization usually consists of large-area printed aluminum-based thick-film paste, which on sintering above 800 0 C by forming a low-melting (577 ° C) AISi eutectic and recrystallization of Al-doped silicon alloyed to the semiconductor surface and thereby overcompensation generates the p + doping.
  • This aluminum doping profile acts as a back surface field, but the metal surface remaining directly on the surface, which acts as a (albeit moderately effective) mirror for the long-wavelength light components, can not achieve a sufficiently low surface recombination rate because it can not be passivated.
  • COSIMA coactact formation to a-Si: H passivated wafers by means of annealing
  • vgL IM vgL IM.
  • a) two diffusions the deep diffusion occurs through a structured mask, the flat diffusion over the entire surface.
  • transparent emitter shallow diffusion, oxidation of the emitter and structuring of the oxide before a second diffusion, cf. RE Schlosser, KA Münzer, A. Froitzheim, R. Tolle, MG Winstel, Manufacturing of Transparent Selective Emitters and Boron Back-Surface-Field Solar Cells Using Screen Printing Technique, 21st Eupvsec, Dresden, 2006, 1119;
  • diffusion from printed doping pastes cf. J. Horzel, et.
  • High-efficiency cells can be produced more advantageously on n-material than on p-material, because there due to lower capture cross-sections of foreign atoms for minority charge carriers (here: the holes) their life is so much longer that results in a higher diffusion length, although their mobility only about one third of the minority carriers in p-material (there: the electron) is; see. D. Macdonald, LJ. Geerligs, Appl. Phys. Lett., 85 (2004), p. 4061.
  • the hitherto published high-efficiency cells have therefore been produced without exception on n-base material.
  • the emitter is after etching the screen printed AI layer and the re-solidified AISi eutectic layer with a large area Passivation of a-Si: H / SiO x or Al 2 O 3 / SiO x coated.
  • this passivation layer photolithographically masked, is then opened by plasma etching or HF dip and contacted by vapor deposition of thin-layer aluminum.
  • "high efficiency front end" inverted pyramids and vapor deposited photolithographic lift-off technology structured TiPdAg layers
  • efficiencies of more than 19% could be achieved, see C. Schmiga et al., 23rd European Photovoltaic Solar Energy Conference, Valencia 2008.
  • Backside emitter back contact solar cells which are primarily interdigitated back contact cells (IBCs) with p + emitter in n-type material, such as the SunPower A300 cell (WP Mulligan, DH Rose, MJ Cudzinovic, DM DeCeuster, KR Mclntosh, DD Smith, RM Swanson, Manufacture of Solar Cells 21% Efficiency, Proceedings of the 19th European Solar Photovoltaic Solar Energy Conference, Paris 2004), characterized in that the emitter and the BSF or base regions on the back of the cell by two in one another contacting metallic fork structures are contacted, both of which each have their own, linearly arranged local, ie by the passivation drilled contact points with each other; see. RJ.
  • IBCs interdigitated back contact cells
  • a printed aluminum layer which acts as a diffusion source, metal contact and light mirror, remains in the above-mentioned cell types on the back of the solar cell.
  • IQE internal quantum efficiency
  • the introduction of the PERC structure improves the passivation of the p + layer (reduces the surface recombination rate) and increases the reflectivity (> 90%).
  • the use of the printed aluminum layer as "precursor" for the production of the BSF in p-material or the emitter in n-material has the following disadvantages:
  • the sintering of the aluminum paste leads to an AlSi melt layer, from which recrystallizes a silicon layer highly doped with aluminum during cooling.
  • the recrystallization takes place from the wafer surface to the outside and leads to an Al doping profile whose highest value is a few microns below the surface. This results in a field distribution that leads the charge carriers generated in this area of the cell in the "wrong" direction.
  • Also the surface concentration of Al at the surface is about 1 power of ten below the solubility limit of Al in Si of about l * 10 19 cm "3 .
  • the contacting of the metal on the emitter is difficult, for ohmic contacts> 10 19 cm "3 are needed.
  • n-wafers with high base resistance (5 - 10 ⁇ cm) are used for IBC cells. But this also increases the transverse resistance and forces a very small pitch (down to approx. 1000 ⁇ m) and therefore very narrow and high-resistance fingers, which lead to high series resistance;
  • the invention has for its object to provide an improved method of the type mentioned above and a so far further developed solar cell, which allow a particularly economical process management and thus cost-effective production.
  • a) allows a visually and electrically improved backside with p + -BSF for standard cells contacted on both sides on p-material; b) made a bilaterally contacted cell concept possible for high-efficiency cells on n-material, for which the low-resistance part of the n-crystal (eg 2-5 ohm * cm) can be used, because then the charge carriers only vertically through the crystal (Wafer thickness ⁇ 200 microns) must diffuse to get to the pn junction; c) for both structures (a) and (b) enables the passivation of the rear side with local contact (PERC); and d) for both structures (a) and (b) solderable contact surfaces on the back made possible without having to interrupt the BSF under these surfaces.
  • the low-resistance part of the n-crystal eg 2-5 ohm * cm
  • a main feature of the invention is that for the formation of the aluminum diffusion profile in silicon not the recrystallization of liquid aluminum-silicon eutectic is used for the first time, but the diffusion of aluminum from an aluminum-containing swelling layer or layer sequence on the wafer surface, which does not melt and which is shielded from the outside atmosphere by a suitable capping layer so that the aluminum can only diffuse into the wafer and not be lost to the surface by air oxidation.
  • the p + layer for a back-side solar cell produced by pure aluminum diffusion according to the invention fulfills in all requirements a homogeneous large-area p + doping, both as emitter in n-silicon and as BSF in p-silicon.
  • the silicon wafer surface does not melt by contact with metallic aluminum at temperatures above the Al-Si eutectic temperature of 577 ° C to form an aluminum-silicon eutectic, so that not, as in the prior art, after cooling below this eutectic temperature, the silicon again recrystallized from the inside out, whereby the aluminum concentration would drop from the solid surface of the silicon within the crystal to the surface of the wafer; Instead, the Al surface concentration by the one-dimensional diffusion caused by the swelling layer or swelling layer layer and covering layer according to the invention almost reaches the solubility limit of 1 ⁇ 10 19 cm -3 and then drops into the interior of the wafer according to the theoretical error function.
  • open clamping voltages of> 700 mV are possible.
  • the starting material is an n-doped silicon wafer with a full-square, pseudo-square or also circular shape, which is subjected to a standard saw damage etching without texturing in the first process step (FIG.
  • the rear side is coated by vapor deposition or sputtering with the aluminum-containing swelling layer or swelling layer sequence (FIG. 2). Immediately thereafter, it is sealed with a layer sequence impermeable to Al diffusion and P diffusion, which terminates with a non-KOH etchable layer (third step, FIG. 3).
  • the reverse side is freed from the uppermost (KOH-resistant) layer of the sealing layer sequence by means of an acid (FIG. 4)
  • the phosphorus diffusion of the front takes place by POCI 3 is admitted into the furnace chamber at temperatures between 800 0 C and 900 0 C according to the prior art, so that forms phosphosilicate glass from which the phosphor diffuses into the silicon surface (Fig. 6).
  • Particularly advantageous is the variant in which the two diffusion steps 5 and 6 are carried out in the same furnace in a two-stage temperature profile.
  • the front of the wafer is re-exposed, i. the front PSG is selectively etched away ( Figure 7).
  • a positive mask made of etch-resistant material in the form of the later finger and busbar pattern is preferably deposited by means of inkjet methods (FIG. 8).
  • the ninth step is the controlled etching back of the phosphor profile in the released regions between the mask stripes on the front side so that the doping depth in the large areas between the fingers is lower (or the sheet resistance is higher, eg. 80-100 ohms / sq.) Than under the fingers and busbars (sheet resistance, eg, 20-40 ohms / sq.) ( Figure 9).
  • the mask layer is stripped ( Figure 10) and then, in the eleventh step, the prior art front side is covered with the optimum passivation and antireflection layer (Figure 11).
  • the front side paste preferably the standard silver paste, is printed, dried and sintered ( Figure 13).
  • the back side is covered with P + V optimized passivation layer by means of PECVD, reactive sputtering or atomic layer deposition (ALD) (FIG. 14).
  • this passivation layer is subsequently opened by wet-chemical etching (preferably by etching paste printing and rinsing of the paste residues) or dry etching (plasma etching, reactive ion etching) or laser ablation at the positions of the local contacts and the busbars (FIG. 15).
  • the entire back surface is provided with aluminum-containing thin film metallization ( Figure 16) onto which a silver-containing thick-film structure is printed in the last, seventeenth steps covering the pads and optionally the individual local pads ( Figure 17).
  • This paste is selected as a low temperature paste, which completely sinters out at temperatures below 600 0 C, because temperatures of> 600 ° C for the exposed aluminum-containing back-side metallization would be harmful.
  • an aluminum-silver eutectic forms at 566 ° C, which produces an optimal connection of the thick film with the thin film.
  • the geometry of the silver layer on the AI metallization is arbitrary.
  • connection elements can create continuous busbars or produce short sections of a silver track onto which the connection elements are selectively soldered during module integration.
  • the same paste could be printed and dried directly on the front side and on the back side, so that they could be co-firing, as in today's standard process, could be sintered.
  • the low-temperature paste ⁇ 600 ° C

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un procédé de fabrication d'une cellule solaire composée (a) d'un substrat à semi-conducteurs dopé n, notamment en silicium, présentant à l'état d'utilisation, une première surface principale servant de côté d'incidence de la lumière, et une deuxième surface principale servant de côté arrière, la première surface principale contenant une zone dopée n+ (champ de surface frontale), et la deuxième surface principale contenant un émetteur p+ conçu par dopage avec de l'aluminium; ou (b) d'un substrat dopé p, notamment en silicium, présentant un émetteur n+ conçu sur le premier côté principal, et une zone dopée p+ conçue dans la deuxième surface principale par dopage avec de l'aluminium (champ de surface arrière). Le dopage avec de l'aluminium est réalisé par diffusion de l'aluminium à partir d'une couche source contenant de l'aluminium, appliquée sur la deuxième surface principale, de telle manière que la concentration d'aluminium présente, de la deuxième surface principale vers l'intérieur du substrat à semi-conducteurs, essentiellement un profil dont la concentration en aluminium maximale est présente sur la deuxième surface principale ou à proximité directe de celle-ci.
EP09783485A 2008-10-31 2009-09-28 Procédé de fabrication d'une cellule solaire et cellule solaire Withdrawn EP2351109A2 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008054093 2008-10-31
DE102009008786A DE102009008786A1 (de) 2008-10-31 2009-02-13 Verfahren zur Herstellung einer Solarzelle und Solarzelle
PCT/EP2009/062526 WO2010049229A2 (fr) 2008-10-31 2009-09-28 Procédé de fabrication d'une cellule solaire et cellule solaire

Publications (1)

Publication Number Publication Date
EP2351109A2 true EP2351109A2 (fr) 2011-08-03

Family

ID=42129354

Family Applications (1)

Application Number Title Priority Date Filing Date
EP09783485A Withdrawn EP2351109A2 (fr) 2008-10-31 2009-09-28 Procédé de fabrication d'une cellule solaire et cellule solaire

Country Status (3)

Country Link
EP (1) EP2351109A2 (fr)
DE (1) DE102009008786A1 (fr)
WO (1) WO2010049229A2 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010028189B4 (de) * 2010-04-26 2018-09-27 Solarworld Industries Gmbh Solarzelle
EP2398071B1 (fr) * 2010-06-17 2013-01-16 Imec Procédé de formation d'un domaine dopé dans une couche de semi-conducteur d'un substrat et utilisation de ce procédé
DE102010017590B4 (de) * 2010-06-25 2014-01-09 Hanwha Q.CELLS GmbH Beidseitig kontaktierte Solarzelle und Solarmodul
DE102013204098A1 (de) 2013-03-11 2014-09-11 SolarWorld Industries Thüringen GmbH Verfahren zum Herstellen einer Rückkontakt-Photovoltaikzelle und Rückkontakt-Photovoltaikzelle
DE102013204465A1 (de) 2013-03-14 2014-09-18 Robert Bosch Gmbh Vorrichtung und Verfahren zum Lasertransfermetallisieren
DE102013204468A1 (de) 2013-03-14 2014-09-18 Robert Bosch Gmbh Verfahren und Vorrichtung zum Herstellen einer elektrisch leitenden Schicht auf einem Trägermaterial
DE102013106272B4 (de) * 2013-06-17 2018-09-20 Hanwha Q Cells Gmbh Wafersolarzelle und Solarzellenherstellungsverfahren

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4152824A (en) * 1977-12-30 1979-05-08 Mobil Tyco Solar Energy Corporation Manufacture of solar cells
JP2706113B2 (ja) * 1988-11-25 1998-01-28 工業技術院長 光電変換素子
US5510271A (en) * 1994-09-09 1996-04-23 Georgia Tech Research Corporation Processes for producing low cost, high efficiency silicon solar cells
US5641362A (en) 1995-11-22 1997-06-24 Ebara Solar, Inc. Structure and fabrication process for an aluminum alloy junction self-aligned back contact silicon solar cell
US6262359B1 (en) * 1999-03-17 2001-07-17 Ebara Solar, Inc. Aluminum alloy back junction solar cell and a process for fabrication thereof
NL1012961C2 (nl) * 1999-09-02 2001-03-05 Stichting Energie Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
GB0114896D0 (en) * 2001-06-19 2001-08-08 Bp Solar Ltd Process for manufacturing a solar cell
DE102007012277A1 (de) * 2007-03-08 2008-09-11 Gebr. Schmid Gmbh & Co. Verfahren zur Herstellung einer Solarzelle sowie damit hergestellte Solarzelle
DE102008013446A1 (de) * 2008-02-15 2009-08-27 Ersol Solar Energy Ag Verfahren zur Herstellung monokristalliner n-Silizium-Solarzellen sowie Solarzelle, hergestellt nach einem derartigen Verfahren

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2010049229A3 *

Also Published As

Publication number Publication date
WO2010049229A2 (fr) 2010-05-06
WO2010049229A3 (fr) 2011-01-06
DE102009008786A1 (de) 2010-06-10

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