EP2335266A1 - Microwave tube with a device for extracting the ions generated in the tube - Google Patents

Microwave tube with a device for extracting the ions generated in the tube

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Publication number
EP2335266A1
EP2335266A1 EP09814103A EP09814103A EP2335266A1 EP 2335266 A1 EP2335266 A1 EP 2335266A1 EP 09814103 A EP09814103 A EP 09814103A EP 09814103 A EP09814103 A EP 09814103A EP 2335266 A1 EP2335266 A1 EP 2335266A1
Authority
EP
European Patent Office
Prior art keywords
electron
tube
electrode
potential
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP09814103A
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German (de)
French (fr)
Other versions
EP2335266B1 (en
Inventor
Frédéric Andre
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Thales SA
Original Assignee
Thales SA
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Publication of EP2335266A1 publication Critical patent/EP2335266A1/en
Application granted granted Critical
Publication of EP2335266B1 publication Critical patent/EP2335266B1/en
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J25/00—Transit-time tubes, e.g. klystrons, travelling-wave tubes, magnetrons
    • H01J25/34—Travelling-wave tubes; Tubes in which a travelling wave is simulated at spaced gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J23/00—Details of transit-time tubes of the types covered by group H01J25/00
    • H01J23/02—Electrodes; Magnetic control means; Screens
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J23/00—Details of transit-time tubes of the types covered by group H01J25/00
    • H01J23/34—Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J25/00—Transit-time tubes, e.g. klystrons, travelling-wave tubes, magnetrons
    • H01J25/02—Tubes with electron stream modulated in velocity or density in a modulator zone and thereafter giving up energy in an inducing zone, the zones being associated with one or more resonators
    • H01J25/10—Klystrons, i.e. tubes having two or more resonators, without reflection of the electron stream, and in which the stream is modulated mainly by velocity in the zone of the input resonator

Definitions

  • the invention relates to microwave tubes with linear electron beam and in particular a device for extracting positive ions produced in the tube.
  • Microwave linear beam tubes such as traveling wave tubes of the acronym TOP or klystrons essentially comprise an electron gun having a cathode providing a cylindrical electron beam in a vacuum cylindrical envelope of a microwave structure of the tube.
  • a collector at one end of the microwave structure, collects the electrons from the beam at the outlet of the cylindrical envelope.
  • the electrons at the output of the cathode are focused in the form of a linear beam in the vacuum cylindrical envelope by means of a magnetic field.
  • This magnetic field can be created either by permanent magnets or by coils around the vacuum cylindrical envelope.
  • the microwave structure is the element of the tube where an interaction between the electron beam and an electromagnetic wave occurs which can be applied to a radio frequency (RF) input of the tube in the case of amplifier tubes, or created in the tube in the case of tubes operating in microwave oscillators. More precisely, the electron beam transfers part of its kinetic energy to the electromagnetic wave in the microwave structure.
  • RF radio frequency
  • the microwave structure comprises resonant cavities and sliding tubes in the case of a klystron and a helix or coupled cavities in the case of a TOP.
  • Figure 1 shows an axial portion of a TOP propeller amplifier of the state of the art.
  • the TOP of FIG. 1 comprises a microwave structure 10 having, along a longitudinal axis ZZ 'of the tube, a vacuum envelope 12 containing a helix 14 traversed along this axis ZZ' by a cylindrical beam 16 of electrons propagating from the cathode towards the anode of the tube.
  • the direction of propagation of the beam is represented by the arrows F in FIG.
  • the microwave structure 10 comprises, in known manner, permanent magnets separated by magnetic spacers (not shown in the figure) to provide a field of confinement (or focusing) of the beam 16 in the axis ZZ 'of the envelope under empty.
  • An RF input provides an RF connection of the TOP propeller with for example an external RF source.
  • the gas molecules passing through the electron beam impacted by electrons of said beam produce positive ions which move slowly, for example, on the cathode side of the tube (not shown in FIG. 1). .
  • the ionic barrier is an electrode placed after the cathode and brought to a positive potential to repel or reflect positive ions from the beam.
  • the disadvantage of the ionic barrier is that it aggravates the ionic relaxation described above disturbing even more strongly the RF signal in the tube. In fact, the positive ions can no longer escape through the cathode and spend more time in the electron beam.
  • an electron tube comprising:
  • a microwave structure having a vacuum envelope comprising two ends, the microwave structure being under a reference potential (M),
  • an electron gun comprising a cathode for supplying an electron beam, along an axis ZZ ', at one end of the vacuum envelope,
  • an electron collector for collecting electrons from the beam at the other end of the vacuum envelope
  • the electron tube comprises, between the cathode and the microwave structure, a device for extracting positive ions comprising at least one electrode e2 brought to a negative potential with respect to the reference potential to extract positive ions from the vacuum envelope, these positive ions being produced by the shock of the electrons of the electron beam with molecules of residual gas in the envelope under empty.
  • the device for extracting positive ions comprises another electrode e1 forming with the electrode e2 a pair of electrodes e1, e2, the electrodes of the pair facing each other on either side of the electron beam, the other electrode e1 of the pair being brought to the reference potential, the electrode e2 being brought to the negative potential (Vp) with respect to the reference potential to create an electric ion extraction field between the two electrodes.
  • the facing electrodes have plane surfaces parallel to a plane passing through the axis ZZ 'creating a passage for the electron beam.
  • each electrode e1, e2 of the pair has a cylindrical half-plate shape, the two electrodes being symmetrical on either side of the axis ZZ '.
  • the plane surfaces parallel to the plane passing through the axis ZZ ' are separated by a distance De on either side of this axis ZZ' to let the electron beam of the tube pass.
  • the electron tube has other devices for extracting positive ions along the electron beam in the vacuum envelope.
  • the reference potential is the mass potential of the tube.
  • the negative potential of the other electrode e2 is typically 100 volts below the electrical weight of the tube.
  • a main objective of the invention is to produce microwave tubes suppressing the ionic relaxation phenomenon by evacuation of positive ions from the tube.
  • Another goal is to protect the cathode from the tube against impacts by the positive ions.
  • Another object of the invention is to postpone the impacts by the ions extracted from the tube on a predetermined surface chosen by the designer of the tube.
  • FIG. 1 already described, shows an axial portion of a TOP propeller amplifier of the state of the art
  • FIG. 2 represents a schematic diagram of a microwave tube according to the invention comprising a device for extracting positive ions and
  • FIG. 3 shows an axial view of the extraction device of the tube of Figure 2 according to the invention.
  • FIG. 2 represents a schematic diagram of a microwave tube according to the invention comprising a device for extracting positive ions.
  • the microwave tube is a traveling wave tube or TOP propeller.
  • the microwave tube of FIG. 2 comprises a microwave structure 30 along a longitudinal axis ZZ 'containing a vacuum cylindrical envelope 32 having two ends.
  • An electron gun 34 comprising a cathode 36 under a negative high voltage potential HT relative to a mass M of the tube (reference potential) provides a cylindrical electron beam 38 at high speed along the axis ZZ 'at one of the ends of the cylindrical envelope under vacuum.
  • the tube comprises a collector 40 for collecting the electrons at the output of the microwave structure 30, at the other end of the vacuum cylindrical envelope.
  • the vacuum cylindrical envelope 32 comprises a helix 42 along the axis ZZ 'acting as a waveguide.
  • the TOP is an RF amplifier comprising an RF input 50 connected to one of the ends of the helix, on the side of the cathode 34, and an RF output 52 connected to the other end. of the propeller on the side of the manifold 40.
  • the hyperfrequency structure 30 of the TOP comprises, around the axis ZZ ', coils 60 providing a magnetic confinement field (or focusing) of the electron beam 38 along the axis ZZ'.
  • the device for extracting positive ions from the microwave tube of FIG. 2 comprises a pair Pe of electrodes (ionic purge) between the cathode 36 and an end of the microwave structure 30, on the side of the cathode 36.
  • the positive ion extraction device comprises a first electrode e1 connected to the mass M of the tube and according to a main characteristic of the invention, a second electrode e2 connected to a potential Vp negative with respect to the mass of the tube.
  • This negative potential Vp is also designated by ion purge potential.
  • the ionic purge potential Vp applied to the second electrode e2 is typically 100 volts below the electrical mass M of the tube, but this voltage Vp can be of significantly different value depending on the spacing chosen between the electrodes of the device. positive ion extraction.
  • the positive ions In arriving near the pair Pe of electrodes e1, e2 are extracted from the beam 38 laterally.
  • the ions In in the electron beam 38 take a radial velocity which extracts them from the beam towards the second electrode e2, also designated by ion purge electrode, and moves them away from the axis ZZ '.
  • the In ions, in this configuration according to the invention, are projected onto a surface of the tube chosen by the designer of the tube thus avoiding their projection on the cathode 36 and consequently suppressing the erosion of the cathode (sputtering).
  • Figure 3 shows an axial view of the extraction device of the tube of Figure 2 according to the invention.
  • FIG. 3 shows the pair Pe of electrodes e1, e2 in the plane Pr perpendicular to the axis ZZ 'of the hyperfrequency structure of the TOP of FIG. 2.
  • Each electrode e1, e2 of the pair Pe has a cylindrical half-plate shape, the two electrodes e1, e2 being symmetrical on either side of the axis ZZ 'of the vacuum envelope, each having a rectilinear edge.
  • b1, b2 in the form of a flat surface. The flat surfaces of the rectilinear edges of the cylindrical half-plates are parallel and separated by a distance on either side of this axis ZZ 'to let the electron beam of the tube pass.
  • the electrode e1 is connected to the mass of the tube and the electrode e2 (or ionic extractor) is connected to a source Ep supplying the negative potential Vp with respect to this mass M
  • the positive ions in the electron beam passing between the two half-plates e1, e2 are attracted to the negative potential Vp when they arrive near the electrode e2 (or the ion extractor).
  • the negative ions extracted from the electron beam 38 pass through the half-plate e2 and are conducted by the electrical connection 62 connecting the half-plate e2 to the source Ep of negative potential Vp to an ion projection surface determined by the designer. tube (surface not shown in Figure 3).
  • the non-axisymmetric shape of the pair Pe of electrodes makes it possible to generate between the edges b1, b2 of the two electrodes e1, e2 a static electric field Ech whose component perpendicular to the axis of the beam of electrons is non-zero.
  • the positive ions of the beam take a radial velocity which extracts them from the beam and moves them away from the axis ZZ 'of the tube.
  • the positive ions are projected onto the projection surface chosen by the designer and on which the sputtering does not endanger the operation of the tube.
  • the electrostatic field produced by the electrodes e1, e2 is too weak to significantly influence the electron trajectories of the electron beam of the tube, only the trajectories of the positive ions are deflected.
  • the positive ion extraction device evacuates the positive ions of the beam, significantly reducing the ionic relaxation problem and makes it possible to choose the impact surface of the ions, which avoids a erosion of the sensitive surfaces of the tube, and in particular that of the cathode, endangering the operation of the tube
  • the vacuum envelope may comprise several ionic purges, or several pairs of positive ion extraction electrodes along the path of the electron beam, or along the 'ZZ axis', to more effectively eliminate the influence of positive ions in the microwave tube.
  • TOP described is not limiting and the invention can be applied to other types of electronic tubes, forms of vacuum envelopes and electron beams.
  • the electron beam may be of rectangular section.
  • the invention applies to electronic tubes comprising either a hot cathode or a cold cathode.
  • the axis ZZ ' is, in other electron tubes, the output axis of electrons that can propagate subsequently in other directions in microwave structures of different shapes depending on the application.

Landscapes

  • Electron Sources, Ion Sources (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)

Abstract

An electron tube includes: a microwave structure having an evacuated envelope including two ends, the microwave structure being at a reference potential, an electron gun including a cathode for providing a beam of electrons, along an axis, at one end of the evacuated envelope, an electron collector for gathering electrons of the beam at the other end of the evacuated envelope, and at least one high-voltage power supply for applying to the cathode a negative high-voltage potential with respect to the reference potential. The tube includes between the cathode and the microwave structure a device for extracting the positive ions including at least one electrode carried to a negative potential with respect to the reference potential so as to extract positive ions from the evacuated envelope, these positive ions being produced by the impacting of the electrons of the electron beam with molecules of residual gas in the evacuated envelope. The invention has application to microwave electron tubes, klystron TWT etc. using a cylindrical electron beam.

Description

TUBE HYPERFREQUENCES AVEC DISPOSITIF D'EXTRACTION D'IONS HYPERFREQUENCY TUBE WITH ION EXTRACTION DEVICE
PRODUITS DANS LE TUBEPRODUCTS IN THE TUBE
L'invention concerne les tubes hyperfréquences avec faisceau électronique linéaire et notamment un dispositif d'extraction des ions positifs produits dans le tube.The invention relates to microwave tubes with linear electron beam and in particular a device for extracting positive ions produced in the tube.
Les tubes hyperfréquences à faisceau linéaire tels que les tubes à ondes progressives d'acronyme TOP ou les klystrons comportent essentiellement un canon à électrons ayant une cathode fournissant un faisceau cylindrique d'électrons dans une enveloppe cylindrique sous vide d'une structure hyperfréquences du tube. Un collecteur, à une extrémité de la structure hyperfréquences, recueille les électrons du faisceau en sortie de l'enveloppe cylindrique.Microwave linear beam tubes such as traveling wave tubes of the acronym TOP or klystrons essentially comprise an electron gun having a cathode providing a cylindrical electron beam in a vacuum cylindrical envelope of a microwave structure of the tube. A collector, at one end of the microwave structure, collects the electrons from the beam at the outlet of the cylindrical envelope.
Les électrons en sortie de la cathode sont focalisés sous forme d'un faisceau linéaire dans l'enveloppe cylindrique sous vide au moyen d'un champ magnétique. Ce champ magnétique peut être crée soit par des aimants permanents, soit par des bobinages autour de l'enveloppe cylindrique sous vide.The electrons at the output of the cathode are focused in the form of a linear beam in the vacuum cylindrical envelope by means of a magnetic field. This magnetic field can be created either by permanent magnets or by coils around the vacuum cylindrical envelope.
La structure hyperfréquences est l'élément du tube où s'effectue une interaction entre le faisceau d'électrons et une onde électromagnétique qui peut être, soit appliquée à une entrée radiofréquences (RF) du tube dans le cas de tubes amplificateurs, soit créée dans le tube dans le cas des tubes fonctionnant en oscillateurs hyperfréquences. Plus précisément le faisceau d'électrons cède une partie de son énergie cinétique à l'onde électromagnétique dans la structure hyperfréquences.The microwave structure is the element of the tube where an interaction between the electron beam and an electromagnetic wave occurs which can be applied to a radio frequency (RF) input of the tube in the case of amplifier tubes, or created in the tube in the case of tubes operating in microwave oscillators. More precisely, the electron beam transfers part of its kinetic energy to the electromagnetic wave in the microwave structure.
La structure hyperfréquences comporte des cavités résonnantes et des tubes de glissement dans le cas d'un klystron et d'une hélice ou des cavités couplées dans le cas d'un TOP.The microwave structure comprises resonant cavities and sliding tubes in the case of a klystron and a helix or coupled cavities in the case of a TOP.
Le vide à l'intérieur d'un tube électronique n'est jamais parfait et des molécules de gaz présentes dans l'enveloppe sous vide du tube passent dans le faisceau et perdent des électrons (phénomène d'ionisation) sous l'impact des électrons du faisceau qui sont très énergétiques (typiquement plusieurs Kev). Des ions positifs sont ainsi formés dans le faisceau. Les charges positives étant attirées par les charges négatives du faisceau, les ions positifs restent bloqués dans le faisceau dans une position d'équilibre radiale.The vacuum inside an electron tube is never perfect and gas molecules present in the vacuum envelope of the tube pass into the beam and lose electrons (ionization phenomenon) under the impact of electrons beam that are very energetic (typically several Kev). Positive ions are thus formed in the beam. Since the positive charges are attracted by the negative charges of the beam, the Positive ions remain stuck in the beam in a position of radial equilibrium.
La figure 1 montre une portion axiale d'un TOP amplificateur à hélice de l'état de l'art.Figure 1 shows an axial portion of a TOP propeller amplifier of the state of the art.
Le TOP de la figure 1 comporte une structure hyperfréquences 10 ayant, selon un axe ZZ' longitudinal du tube, une enveloppe sous vide 12 contenant une hélice 14 traversée selon cet axe ZZ' par un faisceau 16 cylindrique d'électrons se propageant de la cathode vers l'anode du tube. Le sens de propagation du faisceau est représenté par les flèches F sur la figure 1.The TOP of FIG. 1 comprises a microwave structure 10 having, along a longitudinal axis ZZ 'of the tube, a vacuum envelope 12 containing a helix 14 traversed along this axis ZZ' by a cylindrical beam 16 of electrons propagating from the cathode towards the anode of the tube. The direction of propagation of the beam is represented by the arrows F in FIG.
La structure hyperfréquences 10 comporte, de façon connue, des aimants permanents sépares par des entretoises magnétiques (non représentés sur la figure) pour fournir un champ de confinement (ou de focalisation) du faisceau 16 dans l'axe ZZ' de l'enveloppe sous vide. Une entrée RF assure une connexion RF de l'hélice du TOP avec par exemple une source RF externe.The microwave structure 10 comprises, in known manner, permanent magnets separated by magnetic spacers (not shown in the figure) to provide a field of confinement (or focusing) of the beam 16 in the axis ZZ 'of the envelope under empty. An RF input provides an RF connection of the TOP propeller with for example an external RF source.
Comme cela a été décrit précédemment, les molécules de gaz passant dans le faisceau électronique percutées par des électrons dudit faisceau produisent des ions positifs 20 qui se déplacent lentement, par exemple, du côté de la cathode du tube (non représentée sur la figure 1 ).As previously described, the gas molecules passing through the electron beam impacted by electrons of said beam produce positive ions which move slowly, for example, on the cathode side of the tube (not shown in FIG. 1). .
La force axiale agissant sur ces ions positifs 20 est très faible et ils peuvent rester très longtemps dans le faisceau 16 avant que leur lente vitesse de dérive ne les évacue, soit vers la cathode, soit vers le collecteur du tube. En conséquence, une grande quantité d'ions peut s'accumuler à l'intérieur du faisceau 16 et générer une charge d'espace positive importante pouvant compromettre une bonne focalisation du faisceau. Il résulte de cette concentration des ions positifs dans le faisceau une instabilité de focalisation périodique, appelée relaxation ionique. C'est un phénomène parasite qui perturbe le signal RF de télécommunication, par exemple dans le cas d'un amplificateur de type TOP, et que l'on cherche à éliminer.The axial force acting on these positive ions 20 is very low and they can remain very long in the beam 16 before their slow drift rate evacuates them, either to the cathode or to the collector of the tube. As a result, a large amount of ions can accumulate inside the beam 16 and generate a large positive space charge that may compromise a good focus of the beam. This concentration of positive ions in the beam results in periodic focusing instability, called ionic relaxation. This is a parasitic phenomenon that disrupts the telecommunication RF signal, for example in the case of a TOP type amplifier, and which one seeks to eliminate.
Les ions positifs produits par le choc des électrons du faisceau avec les molécules de gaz dans l'enveloppe sous vide, outre le phénomène de relaxation ionique, présentent un autre inconvénient. En effet, lorsque ces ions arrivent, après leur long parcours dans le faisceau, au niveau de la cathode du tube, le potentiel négatif de la cathode les attire produisant des impacts sur la cathode et une détérioration de sa surface émissive par un phénomène d'érosion ionique ou « sputtering » en langue anglaise. Pour supprimer l'impact des ions positifs sur la cathode du tube, les tubes électroniques de l'état de l'art sont équipés d'un dispositif désigné par le terme de « barrière ionique ». La barrière ionique est une électrode placée après la cathode et portée à un potentiel positif pour repousser ou réfléchir les ions positifs en provenance du faisceau. L'inconvénient de la barrière ionique est qu'elle aggrave la relaxation ionique décrite précédemment perturbant encore plus fortement le signal RF dans le tube. En effet les ions positifs ne peuvent plus s'évacuer par la cathode et passent plus de temps dans le faisceau d'électrons.The positive ions produced by the shock of the electrons of the beam with the gas molecules in the vacuum envelope, in addition to the phenomenon of ionic relaxation, have another disadvantage. Indeed, when these ions arrive, after their long journey in the beam, at the cathode of the tube, the negative potential of the cathode attracts them producing impacts on the cathode and a deterioration of its emissive surface by a phenomenon of ionic erosion or "sputtering In the English language. To eliminate the impact of positive ions on the cathode of the tube, the electronic tubes of the state of the art are equipped with a device designated by the term "ionic barrier". The ionic barrier is an electrode placed after the cathode and brought to a positive potential to repel or reflect positive ions from the beam. The disadvantage of the ionic barrier is that it aggravates the ionic relaxation described above disturbing even more strongly the RF signal in the tube. In fact, the positive ions can no longer escape through the cathode and spend more time in the electron beam.
Afin de pallier les inconvénients des tubes électroniques hyperfréquences de l'état de l'art, l'invention propose un tube électronique comportant :In order to overcome the drawbacks of microwave electronic tubes of the state of the art, the invention proposes an electron tube comprising:
- une structure hyperfréquences ayant une enveloppe sous vide comportant deux extrémités, la structure hyperfréquence étant sous un potentiel de référence (M),a microwave structure having a vacuum envelope comprising two ends, the microwave structure being under a reference potential (M),
- un canon à électrons comportant une cathode pour fournir un faisceau d'électrons, selon un axe ZZ', à une extrémité de l'enveloppe sous vide,an electron gun comprising a cathode for supplying an electron beam, along an axis ZZ ', at one end of the vacuum envelope,
- un collecteur d'électrons pour recueillir des électrons du faisceau à l'autre extrémité de l'enveloppe sous vide,an electron collector for collecting electrons from the beam at the other end of the vacuum envelope,
- au moins une alimentation haute tension pour appliquer à la cathode un potentiel haute tension négatif par rapport au potentiel de référence, le tube électronique comporte, entre la cathode et la structure hyperfréquences, un dispositif d'extraction des ions positifs comportant au moins une électrode e2 portée à un potentiel négatif par rapport au potentiel de référence pour extraire des ions positifs de l'enveloppe sous vide, ces ions positifs étant produits par le choc des électrons du faisceau d'électrons avec des molécules de gaz résiduel dans l'enveloppe sous vide. Avantageusement, le dispositif d'extraction des ions positifs comporte une autre électrode e1 formant avec l'électrode e2 une paire d'électrodes e1 , e2, les électrodes de la paire se faisant face de part et d'autre du faisceau d'électrons, l'autre électrode e1 de la paire étant portée au potentiel de référence, l'électrode e2 étant portée au potentiel négatif (Vp) par rapport au potentiel de référence pour créer entre les deux électrodes un champ électrique d'extraction de ions.at least one high-voltage power supply for applying to the cathode a negative high voltage potential with respect to the reference potential, the electron tube comprises, between the cathode and the microwave structure, a device for extracting positive ions comprising at least one electrode e2 brought to a negative potential with respect to the reference potential to extract positive ions from the vacuum envelope, these positive ions being produced by the shock of the electrons of the electron beam with molecules of residual gas in the envelope under empty. Advantageously, the device for extracting positive ions comprises another electrode e1 forming with the electrode e2 a pair of electrodes e1, e2, the electrodes of the pair facing each other on either side of the electron beam, the other electrode e1 of the pair being brought to the reference potential, the electrode e2 being brought to the negative potential (Vp) with respect to the reference potential to create an electric ion extraction field between the two electrodes.
Dans une réalisation, les électrodes se faisant face comportent des surfaces planes parallèles à un plan passant par l'axe ZZ' créant un passage pour le faisceau d'électrons.In one embodiment, the facing electrodes have plane surfaces parallel to a plane passing through the axis ZZ 'creating a passage for the electron beam.
Dans une autre réalisation, chaque électrode e1 , e2, de la paire a une forme de demi-plaque cylindrique, les deux électrodes étant symétriques de part et d'autre de l'axe ZZ'.In another embodiment, each electrode e1, e2 of the pair has a cylindrical half-plate shape, the two electrodes being symmetrical on either side of the axis ZZ '.
Dans une autre réalisation, les surfaces planes parallèles au plan passant par l'axe ZZ' sont sépares d'un distance De de part et d'autre de cet axe ZZ' pour laisser passer le faisceau d'électrons du tube.In another embodiment, the plane surfaces parallel to the plane passing through the axis ZZ 'are separated by a distance De on either side of this axis ZZ' to let the electron beam of the tube pass.
Dans une autre réalisation, le tube électronique comporte d'autres dispositifs d'extraction des ions positifs le long du faisceau d'électrons dans l'enveloppe sous vide.In another embodiment, the electron tube has other devices for extracting positive ions along the electron beam in the vacuum envelope.
Dans une autre réalisation, le potentiel de référence est le potentiel de masse du tube.In another embodiment, the reference potential is the mass potential of the tube.
Dans une autre réalisation, le potentiel négatif de l'autre l'électrode e2 est typiquement de 100 volts en dessous de la masse électrique du tube.In another embodiment, the negative potential of the other electrode e2 is typically 100 volts below the electrical weight of the tube.
Un principal objectif de l'invention est de réaliser des tubes hyperfréquence supprimant le phénomène de relaxation ionique par évacuation des ions positifs du tube.A main objective of the invention is to produce microwave tubes suppressing the ionic relaxation phenomenon by evacuation of positive ions from the tube.
Un autre objectif et de protéger la cathode du tube contre des impacts par les ions positifs. Un autre objectif de l'invention est de reporter les impacts par les ions extraits du tube sur une surface prédéterminée choisie par le concepteur du tube.Another goal is to protect the cathode from the tube against impacts by the positive ions. Another object of the invention is to postpone the impacts by the ions extracted from the tube on a predetermined surface chosen by the designer of the tube.
L'invention sera mieux comprise par la descrption d'un tube hyperfréquence selon l'invention par des figures indexées dans les quelles :The invention will be better understood by the descrption of a microwave tube according to the invention by indexed figures in which:
- la figure 1 , déjà décrite, montre une portion axiale d'un TOP amplificateur à hélice de l'état de l'art ;FIG. 1, already described, shows an axial portion of a TOP propeller amplifier of the state of the art;
- la figure 2 représente un schéma de principe d'un tube hyperfréquence selon l'invention comportant un dispositif d'extraction d'ions positifs et ;FIG. 2 represents a schematic diagram of a microwave tube according to the invention comprising a device for extracting positive ions and
- la figure 3 montre une vue axiale du dispositif d'extraction du tube de la figure 2 selon l'invention.- Figure 3 shows an axial view of the extraction device of the tube of Figure 2 according to the invention.
La figure 2 représente un schéma de principe d'un tube hyperfréquence selon l'invention comportant un dispositif d'extraction d'ions positifs. Dans cet exemple de réalisation le tube hyperfréquence est un tube à ondes progressives ou TOP à hélice.FIG. 2 represents a schematic diagram of a microwave tube according to the invention comprising a device for extracting positive ions. In this embodiment the microwave tube is a traveling wave tube or TOP propeller.
Le tube hyperfréquences de la figure 2 comporte une structure hyperfréquence 30 selon un axe longitudinal ZZ' contenant une enveloppe cylindrique sous vide 32 ayant deux extrémités.The microwave tube of FIG. 2 comprises a microwave structure 30 along a longitudinal axis ZZ 'containing a vacuum cylindrical envelope 32 having two ends.
Un canon à électrons 34 comportant une cathode 36 sous un potentiel haute tension négatif HT par rapport à une masse M du tube (potentiel de référence) fournit un faisceau cylindrique d'électrons 38 à grande vitesse selon l'axe ZZ' à une des extrémités de l'enveloppe cylindrique sous vide.An electron gun 34 comprising a cathode 36 under a negative high voltage potential HT relative to a mass M of the tube (reference potential) provides a cylindrical electron beam 38 at high speed along the axis ZZ 'at one of the ends of the cylindrical envelope under vacuum.
Le tube comporte un collecteur 40 pour recueillir les électrons en sortie de la structure hyperfréquence 30, à l'autre extrémité de l'enveloppe cylindrique sous vide. L'enveloppe cylindrique sous vide 32 comporte, une hélice 42 selon l'axe ZZ' faisant office de guide d'onde. Dans l'exemple de réalisation de la figure 2, le TOP est un amplificateur RF comportant une entré RF 50 connectée à une des extrémités de l'hélice, du coté de la cathode 34, et une sortie RF 52 connectée à l'autre extrémité de l'hélice du côté de du collecteur 40. La structure hyperfréquence 30 du TOP comporte, au tour de l'axe ZZ', des bobines 60 fournissant un champ magnétique de confinement (ou focalisation) du faisceau d'électrons 38 selon l'axe ZZ'.The tube comprises a collector 40 for collecting the electrons at the output of the microwave structure 30, at the other end of the vacuum cylindrical envelope. The vacuum cylindrical envelope 32 comprises a helix 42 along the axis ZZ 'acting as a waveguide. In the exemplary embodiment of FIG. 2, the TOP is an RF amplifier comprising an RF input 50 connected to one of the ends of the helix, on the side of the cathode 34, and an RF output 52 connected to the other end. of the propeller on the side of the manifold 40. The hyperfrequency structure 30 of the TOP comprises, around the axis ZZ ', coils 60 providing a magnetic confinement field (or focusing) of the electron beam 38 along the axis ZZ'.
Le dispositif d'extraction d'ions positifs du tube hyperfréquence de la figure 2 comporte une paire Pe d'électrodes (purge ionique) entre la cathode 36 et une extrémité de la structure hyperfréquences 30, du côte de la cathode 36.The device for extracting positive ions from the microwave tube of FIG. 2 comprises a pair Pe of electrodes (ionic purge) between the cathode 36 and an end of the microwave structure 30, on the side of the cathode 36.
Chaque électrode de la paire Pe est dans un même plan radial Pr perpendiculaire à l'axe ZZ' du tube. Le dispositif d'extraction d'ions positifs comporte une première électrode e1 relié à la masse M du tube et selon une principale caractéristique de l'invention, une deuxième électrode e2 reliée à un potentiel Vp négatif par rapport à la masse du tube. Ce potentiel négatif Vp est aussi désigné par potentiel de purge ionique. Le potentiel Vp de purge ionique appliqué à la deuxième électrode e2 est typiquement de 100 volts en dessous de la masse M électrique du tube, mais cette tension Vp peut être de valeur significativement différente en fonction de l'espacement choisi entre les électrodes du dispositif d'extraction d'ions positifs. Les ions positifs In arrivant à proximité de la paire Pe d'électrodes e1 , e2 sont extraits du faisceau 38 latéralement. Les ions In dans le faisceau d'électrons 38 prennent une vitesse radiale qui les extrait du faisceau vers la deuxième électrode e2, désignée aussi par électrode de purge ionique, et les éloigne de l'axe ZZ'. Les ions In, dans cette configuration selon l'invention, sont projetés sur une surface du tube choisie par le concepteur du tube évitant ainsi leur projection sur la cathode 36 et par conséquent supprimant l'érosion de la cathode (sputtering).Each electrode of the pair Pe is in the same radial plane Pr perpendicular to the axis ZZ 'of the tube. The positive ion extraction device comprises a first electrode e1 connected to the mass M of the tube and according to a main characteristic of the invention, a second electrode e2 connected to a potential Vp negative with respect to the mass of the tube. This negative potential Vp is also designated by ion purge potential. The ionic purge potential Vp applied to the second electrode e2 is typically 100 volts below the electrical mass M of the tube, but this voltage Vp can be of significantly different value depending on the spacing chosen between the electrodes of the device. positive ion extraction. The positive ions In arriving near the pair Pe of electrodes e1, e2 are extracted from the beam 38 laterally. The ions In in the electron beam 38 take a radial velocity which extracts them from the beam towards the second electrode e2, also designated by ion purge electrode, and moves them away from the axis ZZ '. The In ions, in this configuration according to the invention, are projected onto a surface of the tube chosen by the designer of the tube thus avoiding their projection on the cathode 36 and consequently suppressing the erosion of the cathode (sputtering).
La figure 3 montre une vue axiale du dispositif d'extraction du tube de la figure 2 selon l'invention.Figure 3 shows an axial view of the extraction device of the tube of Figure 2 according to the invention.
La vue axiale de la figure 3 montre la paire Pe d'électrodes e1 , e2 dans le plan Pr perpendiculaire à l'axe ZZ' de la structure hyperfréquences du TOP de la figure 2. Chaque électrode e1 , e2 de la paire Pe a une forme de demi- plaque cylindrique, les deux électrodes e1 , e2 étant symétriques de part et d'autre de l'axe ZZ' de l'enveloppe sous vide, chacune comportant un bord rectiligne b1 , b2 sous forme d'une surface plane. Les surfaces planes des bords rectilignes des demi-plaques cylindriques sont parallèles et sépares d'un distance De part et d'autre de cet axe ZZ' pour laisser passer le faisceau d'électrons du tube.The axial view of FIG. 3 shows the pair Pe of electrodes e1, e2 in the plane Pr perpendicular to the axis ZZ 'of the hyperfrequency structure of the TOP of FIG. 2. Each electrode e1, e2 of the pair Pe has a cylindrical half-plate shape, the two electrodes e1, e2 being symmetrical on either side of the axis ZZ 'of the vacuum envelope, each having a rectilinear edge. b1, b2 in the form of a flat surface. The flat surfaces of the rectilinear edges of the cylindrical half-plates are parallel and separated by a distance on either side of this axis ZZ 'to let the electron beam of the tube pass.
L'électrode e1 est reliée à la masse du tube et l'électrode e2 (ou extracteur ionique) est relié à une source Ep fournissant le potentiel négatif Vp par rapport à cette masse MThe electrode e1 is connected to the mass of the tube and the electrode e2 (or ionic extractor) is connected to a source Ep supplying the negative potential Vp with respect to this mass M
Les ions positifs dans le faisceau d'électrons passant entre les deux demi-plaques e1 , e2 sont attirés par le potentiel négatif Vp lorsqu'ils arrivent à proximité de l'électrode e2 (ou de l'extracteur ionique). Les ions négatifs extraits du faisceau d'électrons 38 passent par la demi-plaque e2 et sont conduits par la connexion électrique 62 reliant la demi-plaque e2 à la source Ep de potentiel négatif Vp vers une surface de projection des ions déterminée par le concepteur du tube (surface non représentée sur la figure 3).The positive ions in the electron beam passing between the two half-plates e1, e2 are attracted to the negative potential Vp when they arrive near the electrode e2 (or the ion extractor). The negative ions extracted from the electron beam 38 pass through the half-plate e2 and are conducted by the electrical connection 62 connecting the half-plate e2 to the source Ep of negative potential Vp to an ion projection surface determined by the designer. tube (surface not shown in Figure 3).
Comme représenté sur la figure 3 la forme non axisymétrique de la paire Pe d'électrodes permet de générer entre les bords b1 , b2 droits des deux électrodes e1 , e2 un champ électrique statique Ech dont la composante perpendiculaire à l'axe du faisceau d'électrons est non nulle. Les ions positif du faisceau prennent une vitesse radiale qui les extrait du faisceau et les éloigne de l'axe ZZ' du tube. Les ions positifs sont projetés sur la surface de projection choisie par le concepteur et sur laquelle le sputtering ne met pas en danger le fonctionnement du tube.As represented in FIG. 3, the non-axisymmetric shape of the pair Pe of electrodes makes it possible to generate between the edges b1, b2 of the two electrodes e1, e2 a static electric field Ech whose component perpendicular to the axis of the beam of electrons is non-zero. The positive ions of the beam take a radial velocity which extracts them from the beam and moves them away from the axis ZZ 'of the tube. The positive ions are projected onto the projection surface chosen by the designer and on which the sputtering does not endanger the operation of the tube.
Le champ électrostatique produit par les électrodes e1 , e2 est trop faible pour influencer significativement les trajectoires des électrons du faisceau électronique du tube, seules les trajectoires des ions positifs sont déviées.The electrostatic field produced by the electrodes e1, e2 is too weak to significantly influence the electron trajectories of the electron beam of the tube, only the trajectories of the positive ions are deflected.
Le dispositif d'extraction d'ions positifs selon l'invention évacue les ions positif du faisceau réduisant notablement le problème de relaxation ionique et permet de choisir la surface d'impact des ions ce qui évite une érosion des surfaces sensibles du tube, et notamment celle de la cathode, mettant en danger le fonctionnement du tubeThe positive ion extraction device according to the invention evacuates the positive ions of the beam, significantly reducing the ionic relaxation problem and makes it possible to choose the impact surface of the ions, which avoids a erosion of the sensitive surfaces of the tube, and in particular that of the cathode, endangering the operation of the tube
Dans d'autres réalisations du tube électronique selon l'invention, l'enveloppe sous vide peut comporter plusieurs purges ionique, soit plusieurs paires d'électrodes d'extraction des ions positifs le long de la trajectoire du faisceau électronique, soit le long de l'axe ZZ', afin d'éliminer plus efficacement l'influence des ions positifs dans le tube hyperfréquences.In other embodiments of the electron tube according to the invention, the vacuum envelope may comprise several ionic purges, or several pairs of positive ion extraction electrodes along the path of the electron beam, or along the 'ZZ axis', to more effectively eliminate the influence of positive ions in the microwave tube.
L'exemple de TOP décrit n'est pas limitatif et l'invention peut s'appliquer à d'autres types de tubes électroniques, formes d'enveloppes sous vide et faisceaux électroniques. Par exemple dans certains tubes électroniques le faisceau d'électrons peut être de section rectangulaire.The example of TOP described is not limiting and the invention can be applied to other types of electronic tubes, forms of vacuum envelopes and electron beams. For example in some electron tubes the electron beam may be of rectangular section.
L'invention s'applique à des tubes électroniques comportant, soit une cathode chaude, soit une cathode froide.The invention applies to electronic tubes comprising either a hot cathode or a cold cathode.
L'axe ZZ' est, dans d'autres tubes électroniques, l'axe de sortie des électrons pouvant des propager en suite dans d'autres direction dans des structures hyperfréquences de différentes formes selon les applications. The axis ZZ 'is, in other electron tubes, the output axis of electrons that can propagate subsequently in other directions in microwave structures of different shapes depending on the application.

Claims

REVENDICATIONS
1 . Tube électronique comportant : - une structure hyperfréquences (10, 30) ayant une enveloppe (12,1. Electronic tube comprising: - a microwave structure (10, 30) having an envelope (12,
32) sous vide comportant deux extrémités, la structure hyperfréquence étant sous un potentiel de référence (M),32) having two ends, the microwave structure being under a reference potential (M),
- un canon à électrons (34) comportant une cathode (36) pour fournir un faisceau (1 6, 38) d'électrons, selon un axe ZZ', à une extrémité de l'enveloppe sous vide,an electron gun (34) having a cathode (36) for providing a beam (1 6, 38) of electrons, along an axis ZZ ', at one end of the vacuum envelope,
- un collecteur (40) d'électrons pour recueillir des électrons du faisceau à l'autre extrémité de l'enveloppe sous vide,an electron collector (40) for collecting electrons from the beam at the other end of the vacuum envelope,
- au moins une alimentation haute tension pour appliquer à la cathode (36) un potentiel haute tension (HT) négatif par rapport au potentiel de référence (M),at least one high-voltage power supply for applying to the cathode (36) a high voltage potential (HT) negative with respect to the reference potential (M),
- entre la cathode (36) et la structure hyperfréquences, un dispositif (Pe) d'extraction des ions positifs comportant au moins une électrode e2 portée à un potentiel négatif (Vp) par rapport au potentiel de référence (M) pour extraire des ions positifs (In) de l'enveloppe sous vide, ces ions positifs étant produits par le choc des électrons du faisceau d'électrons avec des molécules de gaz résiduel dans l'enveloppe sous vide, caractérisé en ce que le dispositif d'extraction des ions positifs comporte une autre électrode e1 formant avec l'électrode e2 une paire (Pe) d'électrodes e1 , e2, les électrodes de la paire se faisant face de part et d'autre du faisceau d'électrons, l'autre électrode e1 de la paire étant portée au potentiel de référence (M), l'électrode e2 étant portée au potentiel négatif (Vp) par rapport au potentiel de référence (M) pour créer entre les deux électrodes un champ électrique (Ech) d'extraction de ions.between the cathode (36) and the microwave structure, a device (Pe) for extracting positive ions comprising at least one electrode e2 brought to a negative potential (Vp) relative to the reference potential (M) for extracting ions positive (In) vacuum envelope, these positive ions being produced by the electron shock of the electron beam with residual gas molecules in the vacuum envelope, characterized in that the ion extraction device positive has another electrode e1 forming with the electrode e2 a pair (Pe) of electrodes e1, e2, the electrodes of the pair facing each other on either side of the electron beam, the other electrode e1 of the pair being brought to the reference potential (M), the electrode e2 being brought to the negative potential (Vp) with respect to the reference potential (M) to create an ion extraction electric field (Ech) between the two electrodes .
2. Tube électronique selon la revendication 1 , caractérisé en ce que les électrodes se faisant face comportent des surfaces planes parallèles (b1 , b2) à un plan passant par l'axe ZZ' créant un passage pour le faisceau d'électrons (38). 2. An electron tube according to claim 1, characterized in that the electrodes facing each other have flat parallel surfaces (b1, b2) at a plane passing through the axis ZZ 'creating a passage for the electron beam (38). .
3. Tube électronique selon l'une des revendications 1 ou 2, caractérisé en ce chaque électrode e1 , e2 de la paire (Pe) a une forme de demi-plaque cylindrique, les deux électrodes étant symétriques de part et d'autre de l'axe ZZ'.3. An electron tube according to one of claims 1 or 2, characterized in that each electrode e1, e2 of the pair (Pe) has a cylindrical half-plate shape, the two electrodes being symmetrical on both sides of the ZZ axis.
4. Tube électronique selon l'une des revendications 2 ou 3, caractérisé en ce que les surfaces planes parallèles (b1 , b2) au plan passant par l'axe ZZ' sont sépares d'un distance De de part et d'autre de cet axe ZZ' pour laisser passer le faisceau d'électrons du tube.4. An electron tube according to one of claims 2 or 3, characterized in that the parallel plane surfaces (b1, b2) to the plane passing through the axis ZZ 'are separated by a distance De on either side of this axis ZZ 'to let the electron beam of the tube.
5. Tube électronique selon l'une des revendications 1 à 4, caractérisé en ce qu'il comporte d'autres dispositifs d'extraction des ions positifs le long du faisceau d'électrons dans l'enveloppe sous vide.5. An electron tube according to one of claims 1 to 4, characterized in that it comprises other positive ion extraction devices along the electron beam in the vacuum envelope.
6. Tube électronique selon l'une des revendications 1 à 5, caractérisé en ce que le potentiel de référence (M) est le potentiel de masse du tube.6. Electronic tube according to one of claims 1 to 5, characterized in that the reference potential (M) is the mass potential of the tube.
7. Tube électronique selon l'une des revendications 2 à 6, caractérisé en ce que le potentiel négatif (Vp) de l'électrode e2 est typiquement de 100 volts en dessous de la masse (M) électrique du tube. 7. An electron tube according to one of claims 2 to 6, characterized in that the negative potential (Vp) of the electrode e2 is typically 100 volts below the mass (M) of the electric tube.
EP09814103A 2008-09-19 2009-08-24 Microwave tube with a device for extracting the ions generated in the tube Active EP2335266B1 (en)

Applications Claiming Priority (2)

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FR0805154A FR2936354B1 (en) 2008-09-19 2008-09-19 HYPERFREQUENCY TUBE WITH DEVICE FOR EXTRACTING IONS PRODUCED IN THE TUBE
PCT/EP2009/060856 WO2010031655A1 (en) 2008-09-19 2009-08-24 Microwave tube with a device for extracting the ions generated in the tube

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WO2015034949A1 (en) * 2013-09-04 2015-03-12 Qmast Llc Sheet beam klystron (sbk) amplifiers with wrap-on solenoid for stable operation
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CN105590819A (en) * 2016-03-11 2016-05-18 中国工程物理研究院应用电子学研究所 Mixed excitation system of full-chamber extraction relativistic magnetron
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JP7092470B2 (en) * 2017-07-24 2022-06-28 Ｎｅｃネットワーク・センサ株式会社 Electron gun
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FR2936354B1 (en) 2012-09-21
ATE549739T1 (en) 2012-03-15

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