EP2311078A4 - Patterned integrated circuit and method of production thereof - Google Patents
Patterned integrated circuit and method of production thereofInfo
- Publication number
- EP2311078A4 EP2311078A4 EP09771083A EP09771083A EP2311078A4 EP 2311078 A4 EP2311078 A4 EP 2311078A4 EP 09771083 A EP09771083 A EP 09771083A EP 09771083 A EP09771083 A EP 09771083A EP 2311078 A4 EP2311078 A4 EP 2311078A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- production
- integrated circuit
- patterned integrated
- patterned
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53276—Conductive materials containing carbon, e.g. fullerenes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1606—Graphene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/624—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing six or more rings
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US7607908P | 2008-06-26 | 2008-06-26 | |
PCT/US2009/048737 WO2009158552A1 (en) | 2008-06-26 | 2009-06-26 | Patterned integrated circuit and method of production thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
EP2311078A1 EP2311078A1 (en) | 2011-04-20 |
EP2311078A4 true EP2311078A4 (en) | 2012-11-21 |
Family
ID=41444962
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP09771083A Withdrawn EP2311078A4 (en) | 2008-06-26 | 2009-06-26 | Patterned integrated circuit and method of production thereof |
Country Status (2)
Country | Link |
---|---|
EP (1) | EP2311078A4 (en) |
WO (1) | WO2009158552A1 (en) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8865268B2 (en) | 2009-04-28 | 2014-10-21 | Nokia Corporation | Method and apparatus |
KR101758649B1 (en) | 2010-03-31 | 2017-07-18 | 삼성전자주식회사 | Method of manufacturing graphene using germanium layer |
WO2011139236A1 (en) * | 2010-05-05 | 2011-11-10 | National University Of Singapore | Hole doping of graphene |
US20120305892A1 (en) * | 2010-12-08 | 2012-12-06 | Martin Thornton | Electronic device, method of manufacturing a device and apparatus for manufacturing a device |
CN102569169B (en) * | 2010-12-28 | 2014-01-01 | 中芯国际集成电路制造(上海)有限公司 | Interconnection method based on press printing technology |
EP2535937B1 (en) | 2011-06-17 | 2015-03-11 | Friedrich-Alexander-Universität Erlangen-Nürnberg | Electronic device |
CN102364700B (en) * | 2011-10-26 | 2013-03-27 | 常州天合光能有限公司 | Solar cell reactive ion etching (RIE) technology temperature compensation method |
AU2013277941B2 (en) | 2012-06-21 | 2016-10-06 | Monash University | Conductive portions in insulating materials |
EP2747132B1 (en) * | 2012-12-18 | 2018-11-21 | IMEC vzw | A method for transferring a graphene sheet to metal contact bumps of a substrate for use in semiconductor device package |
US9123753B2 (en) | 2013-01-08 | 2015-09-01 | Stmicroelectronics S.R.L. | Nanoscale QCA-based logic gates in graphene technology |
WO2017105470A1 (en) * | 2015-12-17 | 2017-06-22 | Intel Corporation | Low-defect graphene-based devices & interconnects |
CN105906467B (en) * | 2016-04-27 | 2018-09-14 | 厦门大学 | A kind of synthetic method of different three polyindene of organic photoelectrical material |
US10918356B2 (en) | 2016-11-22 | 2021-02-16 | General Electric Company | Ultrasound transducers having electrical traces on acoustic backing structures and methods of making the same |
CN113921383B (en) * | 2021-09-14 | 2022-06-03 | 浙江奥首材料科技有限公司 | Copper surface passivation composition, application thereof and photoresist stripping liquid containing copper surface passivation composition |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040253820A1 (en) * | 2003-06-12 | 2004-12-16 | Deheer Walt A. | Patterned thin film graphite devices and method for making same |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5926700A (en) * | 1997-05-02 | 1999-07-20 | Advanced Micro Devices, Inc. | Semiconductor fabrication having multi-level transistors and high density interconnect therebetween |
US7244669B2 (en) * | 2001-05-23 | 2007-07-17 | Plastic Logic Limited | Patterning of devices |
GB0622150D0 (en) * | 2006-11-06 | 2006-12-20 | Kontrakt Technology Ltd | Anisotropic semiconductor film and method of production thereof |
-
2009
- 2009-06-26 WO PCT/US2009/048737 patent/WO2009158552A1/en active Application Filing
- 2009-06-26 EP EP09771083A patent/EP2311078A4/en not_active Withdrawn
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040253820A1 (en) * | 2003-06-12 | 2004-12-16 | Deheer Walt A. | Patterned thin film graphite devices and method for making same |
Non-Patent Citations (2)
Title |
---|
F. MOLITOR ET AL: "Local gating of a graphene Hall bar by graphene side gates", PHYSICAL REVIEW B, vol. 76, no. 24, 1 December 2007 (2007-12-01), XP055034729, ISSN: 1098-0121, DOI: 10.1103/PhysRevB.76.245426 * |
GU GONG ET AL: "Field effect in epitaxial graphene on a silicon carbide substrate", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 90, no. 25, 19 June 2007 (2007-06-19), pages 253507 - 253507, XP012095422, ISSN: 0003-6951, DOI: 10.1063/1.2749839 * |
Also Published As
Publication number | Publication date |
---|---|
WO2009158552A1 (en) | 2009-12-30 |
EP2311078A1 (en) | 2011-04-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20110126 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK TR |
|
AX | Request for extension of the european patent |
Extension state: AL BA RS |
|
DAX | Request for extension of the european patent (deleted) | ||
A4 | Supplementary search report drawn up and despatched |
Effective date: 20121024 |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 29/16 20060101ALI20121019BHEP Ipc: H01L 21/461 20060101AFI20121019BHEP Ipc: H01L 51/05 20060101ALI20121019BHEP |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20130103 |