EP2274770A4 - Mosfet with integrated field effect rectifier - Google Patents

Mosfet with integrated field effect rectifier

Info

Publication number: EP2274770A4
Authority: EP; European Patent Office
Prior art keywords: mosfet; field effect; integrated field; effect rectifier; rectifier
Prior art date: 2008-04-28
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Withdrawn

Application number

EP09739614A

Other languages

German (de)

French (fr)

Other versions

EP2274770A1 (en

Inventor

Alexei Ankoudinov

Vladimir Rodov

Richard Cordell

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

STMicroelectronics NV Switzerland

STMicroelectronics NV

Original Assignee

STMicroelectronics NV Switzerland

STMicroelectronics NV

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2008-04-28

Filing date

2009-04-28

Publication date

2012-12-26

2009-04-28 Application filed by STMicroelectronics NV Switzerland, STMicroelectronics NV filed Critical STMicroelectronics NV Switzerland

2011-01-19 Publication of EP2274770A1 publication Critical patent/EP2274770A1/en

2012-12-26 Publication of EP2274770A4 publication Critical patent/EP2274770A4/en

Status Withdrawn legal-status Critical Current

Links

230000005669 field effect Effects 0.000 title 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
- H01L29/7804—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode
- H01L29/7805—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode in antiparallel, e.g. freewheel diode

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Ceramic Engineering (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Insulated Gate Type Field-Effect Transistor (AREA)
Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

EP09739614A 2008-04-28 2009-04-28 Mosfet with integrated field effect rectifier Withdrawn EP2274770A4 (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US4833608P	2008-04-28	2008-04-28
PCT/US2009/041996 WO2009134812A1 (en)	2008-04-28	2009-04-28	Mosfet with integrated field effect rectifier

Publications (2)

Publication Number	Publication Date
EP2274770A1 EP2274770A1 (en)	2011-01-19
EP2274770A4 true EP2274770A4 (en)	2012-12-26

Family

ID=41255381

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
EP09739614A Withdrawn EP2274770A4 (en)	2008-04-28	2009-04-28	Mosfet with integrated field effect rectifier

Country Status (3)

Country	Link
EP (1)	EP2274770A4 (en)
CN (1)	CN102037548B (en)
WO (1)	WO2009134812A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US9018048B2 (en)	2012-09-27	2015-04-28	Stmicroelectronics S.R.L.	Process for manufactuirng super-barrier rectifiers
FR3012699A1 (en) *	2013-10-31	2015-05-01	St Microelectronics Tours Sas	CONTROL CIRCUIT FOR DIODES IN HALF-BRIDGE

Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0807979A2 (en) *	1996-05-15	1997-11-19	SILICONIX Incorporated	Diode
US6281547B1 (en) *	1997-05-08	2001-08-28	Megamos Corporation	Power transistor cells provided with reliable trenched source contacts connected to narrower source manufactured without a source mask
US20020177324A1 (en) *	2001-05-23	2002-11-28	Metzler Richard A.	Vertical metal oxide silicon field effect semiconductor diodes
US20080073707A1 (en) *	2006-09-27	2008-03-27	Darwish Mohamed N	Power MOSFET with recessed field plate

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP3156300B2 (en) *	1991-10-07	2001-04-16	株式会社デンソー	Vertical semiconductor device
US5559355A (en) *	1994-03-04	1996-09-24	Fuji Electric Co., Ltd.	Vertical MOS semiconductor device
US5744994A (en) *	1996-05-15	1998-04-28	Siliconix Incorporated	Three-terminal power mosfet switch for use as synchronous rectifier or voltage clamp
DE19743342C2 (en) *	1997-09-30	2002-02-28	Infineon Technologies Ag	Field packing transistor with high packing density and method for its production
US6100145A (en) *	1998-11-05	2000-08-08	Advanced Micro Devices, Inc.	Silicidation with silicon buffer layer and silicon spacers
US6593620B1 (en) *	2000-10-06	2003-07-15	General Semiconductor, Inc.	Trench DMOS transistor with embedded trench schottky rectifier
US6621107B2 (en) *	2001-08-23	2003-09-16	General Semiconductor, Inc.	Trench DMOS transistor with embedded trench schottky rectifier
US7719054B2 (en) *	2006-05-31	2010-05-18	Advanced Analogic Technologies, Inc.	High-voltage lateral DMOS device
JP2005079339A (en) *	2003-08-29	2005-03-24	National Institute Of Advanced Industrial & Technology	Semiconductor device, power converter using semiconductor device, driving inverter, general-purpose inverter, and high power high frequency communication equipment
CN100364093C (en) *	2004-04-06	2008-01-23	世界先进积体电路股份有限公司	High-voltage electrostatic discharging protector with gap structure
JP4832731B2 (en) *	2004-07-07	2011-12-07	株式会社東芝	Power semiconductor device
US7135740B2 (en) *	2004-09-27	2006-11-14	Teledyne Licensing, Llc	High voltage FET switch with conductivity modulation

2009
- 2009-04-28 EP EP09739614A patent/EP2274770A4/en not_active Withdrawn
- 2009-04-28 CN CN200980115255.XA patent/CN102037548B/en not_active Expired - Fee Related
- 2009-04-28 WO PCT/US2009/041996 patent/WO2009134812A1/en active Application Filing

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0807979A2 (en) *	1996-05-15	1997-11-19	SILICONIX Incorporated	Diode
US6281547B1 (en) *	1997-05-08	2001-08-28	Megamos Corporation	Power transistor cells provided with reliable trenched source contacts connected to narrower source manufactured without a source mask
US20020177324A1 (en) *	2001-05-23	2002-11-28	Metzler Richard A.	Vertical metal oxide silicon field effect semiconductor diodes
US20080073707A1 (en) *	2006-09-27	2008-03-27	Darwish Mohamed N	Power MOSFET with recessed field plate

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2009134812A1 *

Also Published As

Publication number	Publication date
EP2274770A1 (en)	2011-01-19
WO2009134812A1 (en)	2009-11-05
CN102037548A (en)	2011-04-27
CN102037548B (en)	2014-04-23

Legal Events

Date	Code	Title	Description
2010-12-17	PUAI	Public reference made under article 153(3) epc to a published international application that has entered the european phase	Free format text: ORIGINAL CODE: 0009012
2011-01-19	17P	Request for examination filed	Effective date: 20101022
2011-01-19	AK	Designated contracting states	Kind code of ref document: A1 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK TR
2011-01-19	AX	Request for extension of the european patent	Extension state: AL BA RS
2011-08-03	DAX	Request for extension of the european patent (deleted)
2012-12-26	A4	Supplementary search report drawn up and despatched	Effective date: 20121126
2012-12-26	RIC1	Information provided on ipc code assigned before grant	Ipc: H01L 29/78 20060101AFI20121120BHEP
2013-07-24	RIN1	Information on inventor provided before grant (corrected)	Inventor name: ANKOUDINOV, ALEXEI Inventor name: CORDELL, RICHARD Inventor name: RODOV, VLADIMIR
2014-03-05	17Q	First examination report despatched	Effective date: 20140131
2017-11-27	STAA	Information on the status of an ep patent application or granted ep patent	Free format text: STATUS: EXAMINATION IS IN PROGRESS
2018-03-02	STAA	Information on the status of an ep patent application or granted ep patent	Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN
2018-04-04	18D	Application deemed to be withdrawn	Effective date: 20171103

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