EP2260508A1 - Self-assembly of chips by substrate - Google Patents
Self-assembly of chips by substrateInfo
- Publication number
- EP2260508A1 EP2260508A1 EP09731239A EP09731239A EP2260508A1 EP 2260508 A1 EP2260508 A1 EP 2260508A1 EP 09731239 A EP09731239 A EP 09731239A EP 09731239 A EP09731239 A EP 09731239A EP 2260508 A1 EP2260508 A1 EP 2260508A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- substrate
- chip
- zone
- component
- amorphous carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
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Definitions
- the invention relates to the assembly of chips or components or of MEMS or integrated circuits on a substrate, in particular in the field of microelectronics.
- This invention applies to the 3D integration of these components or chips or MEMS or integrated circuits, as well as the design of integrated micro systems.
- Self-assembly techniques are increasingly being considered as alternatives or in addition to robotics. Such a technique is for example that described by T. Fukushima et al. In the article entitled “New three dimensional integration technology using self assembly technique", IEEE, 2005. The advantage of this type of technique is that it allows parallel processing of a large number of chips and is therefore less expensive, especially those of the "pick and place” type. But the current methods of self-assembly are mostly implemented fluidic means, in aqueous environment, alignment with shape recognition and bonding by adding material (organic glue). The localization of the area on which the chip will be hybridized is by local adsorption of SAM-type molecules.
- the invention proposes a novel method of forming, at the surface of a substrate, a zone for the purpose of aligning or self-assembling a component or a chip, as well as a technique for assembly of this component or this chip.
- a method of forming, at the surface of a substrate, at least one hydrophilic attachment zone for self-assembly of a component or chip comprises providing a hydrophobic zone which delimits or defines said hydrophilic attachment zone.
- Obtaining two zones, one hydrophobic and the other hydrophilic (attachment zone) results from the use, on the surface of the substrate, of at least two materials having different wettability properties, which results, either of the very nature of these materials or of a specific treatment of these materials.
- Different wettability results, for a zone, a hydrophilic character, which allows it to constitute a zone of attachment, and for the other a hydrophobic character, which allows him to delimit the zone of attachment.
- a plurality of hydrophilic attachment zones can be made.
- the treatment of a surface according to the invention may be local. It is thus easy to locate an attachment zone.
- a zone of attachment and its hydrophobic zone which delimits it can be carried out on any substrate, for example plastic.
- a method according to the invention may comprise a deposition step, at least in the hydrophilic attachment zone, of a bonding layer, or a bonding layer, of a component or a chip.
- the surface of the attachment zone can be transformed to be made hydrophilic, for example by the formation of an oxide or nitride layer (associated with a treatment rendering it hydrophilic).
- the surface of the substrate may be initially homogeneous, or heterogeneous.
- the substrate may further comprise layers of electrical connection and / or optical and / or thermal.
- a substrate according to the invention it is possible to align, on the hydrophilic zone, and then to stick on this same zone, for example by direct bonding or molecular adhesion or thermocompression, a chip or a component on the zone d self-assembly, having the desired localized wettability contrast.
- a method of assembling a component or a chip according to the invention may therefore comprise the following steps: a) preparation of a substrate according to the invention, as explained above, b) self-alignment of the chip on the prepared attachment zone, using the differences in wettability between the hydrophobic zones of the substrate and the other zones, hydrophilic, c) assembly, by molecular bonding or thermocompression, of the chip aligned with the prepared site.
- a method of assembling a component or a chip according to the invention does not require and does not implement a pattern recognition technique to position a component near its attachment zone.
- a method of assembling a component or a chip according to the invention can be realized in the air.
- the alignment step may be carried out using a drop of a liquid, for example water, deposited on the hydrophilic zone.
- a liquid for example water
- the component or the chip may comprise one or more pads and / or vias and / or contacts and / or one or more layers of low-temperature melting material.
- the method may further comprise a step of increasing the temperature to achieve a melting of said low temperature melting material.
- a contact or bond of low-temperature melt material may be formed between the component or chip and the surface of the substrate, for example by the technique mentioned above.
- a method according to the invention may further comprise, before alignment of the component or the chip, a step of preparing the surface to be assembled of this component or chip, such as polishing and / or oxygen plasma treatment and / or UV-ozone treatment.
- a hydrophobic zone is made of amorphous carbon, for example in the form of a thin layer.
- Amorphous carbon can be doped to be conductive.
- a substrate layer of amorphous carbon is deposited on the substrate and a hydrophilic zone is prepared.
- the attachment zone may be delimited by etching of the hydrophobic amorphous carbon layer. It is therefore possible to deposit on the substrate, having possibly undergone one of the treatments explained above, an amorphous carbon support layer and a hydrophilic zone delimited by an amorphous carbon zone is prepared. After step c) above, the carbon layer may be removed.
- the amorphous carbon may be partially removed to leave an amorphous carbon bond between at least one pad of the component and the surface of the substrate.
- a new flat surface at the side of the component or chip that is not assembled on the substrate, or above that face.
- This new flat surface can form the surface of a substrate, and it is possible to form, on this surface, at least one hydrophilic attachment zone according to the invention. It is possible to perform a new assembly step of a component according to the invention, on this new surface.
- a device obtained by a method according to the invention can therefore be produced on another device, also obtained by a method according to the invention.
- a surface is made where the assembly is possible again, for example to assemble a chip on top of the other.
- a hydrophobic zone is made of a metallic material, for example a conductor material already present on the surface of the substrate, or one or portions of a metal antenna.
- the metallic material may constitute patterns which form one or more reliefs with respect to the surface of the substrate.
- the conductive material may be silver or copper or gold or aluminum or tungsten. More generally, it may be any conductive material available for making electrical contacts for microelectronics or micro-systems.
- the hydrophobic zones thus make it possible, here again, to delimit a zone of attachment of a chip or of a component. The latter may be brought and then fixed on the hydrophilic zone by one of the techniques already described above in the context of the invention.
- FIGS. 1A to 1C represent components assembled on substrates according to the invention
- FIGS. 2A-2E show substrates for implementing the invention
- FIGS. 3A-3C represent substrates for implementing the invention, possibly with amorphous carbon deposition; to locate one or more assembly sites,
- FIGS. 4A-4C represent the location of a chip with a substrate according to
- FIGS. 5A-5C represent assemblies of a chip with a substrate according to the invention
- FIGS. 6A-6C represent assemblies of a chip with a substrate according to the invention, after at least partial withdrawal of the layer; amorphous carbon,
- FIGS. 7A-7E represent assemblies of a chip with a substrate according to the invention, after a resumption of amorphous carbon or a deposit of dielectric material on the amorphous carbon layer
- FIGS. 8A and 8B show the location of a chip with a substrate according to the invention, with metallic hydrophobic zones
- FIGS. 9A and 10A represent substrates in plan view, each with an attachment zone located by a metal outline
- FIGS. 9B and 10B represent the substrates FIGS. 9A and 10A, in plan view, with a chip located in the attachment zone delimited by a metal outline,
- FIGS. HA and HB represent stacks of component stages according to the invention.
- FIGS. 1A-1G Examples of devices made according to the invention are illustrated in FIGS. 1A-1G.
- the device comprises a support substrate 2 with which, or on whose surface, a chip 3 is assembled.
- a support substrate 2 with which, or on whose surface, a chip 3 is assembled.
- it is a support layer on a substrate 1.
- the latter can then be of any material, for example plastic, semiconductor or not.
- the substrate 2, or the support layer is made of a non-functional, dielectric or semi- driver, for example from the list below. More particularly, the invention uses a hydrophilic portion of the surface of this substrate 2 or the support layer; in the following, this hydrophilic portion is for example a dielectric or semiconductor material, for example Si, or Ge or GaAs or InP or GaN, or SiO2, or amorphous Si, or silicon nitride, or SiOC, or conductive ITO oxides.
- the hydrophilic nature can be created and / or reinforced by appropriate treatment, for example by adding a layer or by plasma treatment (CARO, plasma O2, thermal oxidation).
- this substrate 2 or its surface may be heterogeneous. It can then in particular present means such as one or more pads and / or vias and / or contacts providing one or more electrical and / or optical and / or thermal functions. It can also include components, for example CMOS. In figures IB and IE, is illustrated the case of vias 4, 6.
- one or more layers 7, 9, 7 ', 9' may also perform one or more of these functions.
- the layers 7, 7 ' provide an electrical connection between the pads 4, 6 and the pads 4', 6 ', the layers 9, 9' ensuring the isolation of this connection.
- the pads or vias, or contacts or layers can be made of different materials of the material of the remainder of the substrate or layer 2, for example copper or SiO2.
- reference numeral 20 denotes an amorphous carbon layer. This layer delimits the zone 12 where the postponement of a component or a chip 3 has been realized.
- the zones 120 comprise a shoulder. But it is also possible, as in Figures IF and IG, that these areas have no shoulder.
- FIG. 1G represents the case of a hybridization at the contact zone between the chip 3 and the zones 120.
- the chip 3 then has the metal studs making it possible to connect these zones 120.
- FIGS. 1A-1G may have undergone one or more treatments in order to functionalize it (ie to prepare it for alignment and gluing), to achieve the alignment of a component or a chip 3 , with a self-assembly zone, then the assembly by gluing, component or chip 3 on this area. This last one is shown in the assembled position in Figures 1A-1G.
- the surface 2 'of the substrate may include an additional layer 8 making it easier to glue a component or a chip and / or to reinforce the wettability contrast between the zone 12 and the layer 20.
- a thin-oxide bonding layer 8 (not visible in FIGS. 1A-1G, but visible in FIGS. 2A-2E) is produced by surface oxygen plasma 2 '.
- FIGS. 1A-1G is produced by surface oxygen plasma 2 '.
- the chip 3 for example a processed silicon chip, has pads 14, 16 of contacts, in order to make contact with the pads 4, 6 of the substrate 2 which are flush with the zone 12 of attachment.
- the chip of Figures ID and IE has contact zones with the metallic hydrophobic zones.
- FIGS. 1A and 1B there may be, after assembly of the chip 3, a residual thickness of carbon.
- the assembly of FIGS. 1A and 1B may undergo an additional step of removing layer 20.
- Such partial or complete shrinkage can be achieved by an oxygen plasma or containing a sufficient portion of oxygen. This results in a structure such as that of FIGS. 6A-6C.
- FIG. 1C represents another assembly according to the invention, but with two stages, one whose elements are identical or similar to those already described above and are therefore designated by identical references, the other which comprises a layer 200 of amorphous carbon stacked on the first, and a component or a chip 300 located in an opening of this layer 200.
- the second stage one uses again a localization of the component by wettability contrast, between a hydrophobic zone comprising a depositing 200 of amorphous carbon and a hydrophilic zone, made in FIG. 1C, partly above the component 3 and partly above the amorphous layer 20 of the lower stage.
- This hydrophilic zone can be obtained by forming a hydrophilic layer on the first stage - as explained below - and delimiting the attachment zone by etching the layer 300 of amorphous carbon.
- This embodiment is also possible with the structures of FIGS. ID and IE: an amorphous carbon layer is deposited on these structures, which is then planarized in order to postpone a new component on this face.
- the number of floors thus stacked can be any.
- FIGS. 2A-2E show basic substrates 2 from which a support substrate according to the invention will be able to be produced.
- the substrate of Figure 2A is homogeneous, a semiconductor material, or other, as already indicated above.
- the surface 2 ' is uniform and has no topology.
- the substrate of FIG. 2D is also homogeneous, in a semiconductor material, or the like, as already indicated above. But its 2 'surface is not uniform and has a topology due to metal portions or conductors 120.
- the substrates of FIGS. 2B, 2C and 2E are heterogeneous.
- the substrate of FIG. 2B comprises studs 4, 6 whose function and nature have also already been explained above.
- the substrate of each of FIGS. 2C and 2E comprises, in addition to the first pads 4, 6, another series of pads 4 ', 6' of connection with one or the other of the particular functions (optical, electrical, etc.) already explained above. These pads make it possible to position one or more chips with interconnections. In addition to the pads, one or more layers or layers of layers 7, 9, 7 ', 9' can be made in the substrate, for example between pads 4, 4 'and 6, 6'.
- each of the substrates of FIGS. 2B, 2C and 2E is heterogeneous. It is first of all in terms of materials: such a substrate is for example a dielectric material, or semiconductor, which surrounds pads 4, 6 of conductive metal (SiOC layer and Cu). It is also heterogeneous in terms of surface condition, the areas where appear pads having a different surface state than areas of dielectric material. One or more surface treatments (especially polishing) makes it possible to standardize this surface state.
- the surface 2 'of each of these structures is hydrophilic, for example by the choice of materials used for the substrate 2 and possibly for the pads 4, 6, 4 ', 6'; or it is made hydrophilic, by one of the treatments already mentioned above, before assembly of the component or the chip 3. It is likewise sought that this surface, at least in these same areas, intended to receive a chip or component, has the characteristics required for the type of bonding (preferably direct bonding) that will be used. This surface can be prepared (by polishing and / or cleaning) so as to allow direct bonding (as described in the book by Tong cited above) or thermo-compression bonding.
- the materials which constitute it are preferably chosen so that these characteristics can be obtained, at the surface 2 ', by an appropriate treatment, for example by polishing and / or cleaning.
- a material selection criterion is the polishing speed of the materials in question.
- FIG. 2D shows the case of a substrate comprising, on the surface, metal zones 120, for example portions of conductors or portions of antennas.
- the substrate itself can be homogeneous (Figure 2D) or heterogeneous ( Figure 2E).
- the zones 120 can also do not have shoulders and have the shape that extends to the broken lines.
- FIGS. 2C and 2E can be used in stacks such as that of FIG. HB: two stages of components 3, 300 are superimposed on a substrate 2.
- the connections between the substrate 2 and the most distant component (here: the component 300) of this substrate are made via zones which coat the component or components of the first and second stages. Repetitions of contact 301 make it possible to connect the component or components of the last stage to the connections of the intermediate stages.
- n> 2 of stages can be provided: it is therefore possible to make connections between the substrate 2 and the component farthest from this substrate (that of the stage n) either via the n-1 component (s) of the n-1 first stages or via zones which encase the components of the n-1 first stages.
- a method for producing the substrate structures, with a layer of amorphous carbon hydrophobic material, will be described in connection with FIGS. 3A to 3C, from the structures of FIGS. 2A-2C.
- Figure 3A shows a single attachment zone 12, but there may be several 12, 12 'for a single stage, as illustrated in Figure 3B. These figures are based on an initial substrate of the type of FIG. 2A, but it is also possible to coat the substrates of FIGS. 2B and 2C of a layer of hydrophobic material, and then forming in this layer one or more attachment zones.
- FIG. 1B is also a representation of a substrate with a component fixed in the hydrophilic zone, but with a substrate of the type of FIG. 2B.
- a deposit of a thin layer of amorphous carbon is produced.
- the attachment zone is defined by a pattern, which can be obtained by etching this thin layer.
- strips 20 ', 21' may be defined by etching of this layer (the carbon deposit having been produced on a hydrophilic surface, any etching which allows the elimination of carbon by an oxidation mechanism (For example a localized plasma or a UV treatment ...) will make it possible to release the zones of fasteners without altering the hydrophilic character of the zones thus laid bare, no further processing will therefore be necessary to ensure the subsequent self-assembly ).
- the amorphous carbon coating which corresponds to each of the attachment zones 12, 12 ', is limited to a small portion of the surface 2'.
- the attachment zone 12, 12 ' is the zone not covered or not masked by amorphous C, but surrounded by this material or delimited by this material (on which hybridization or component attachment will not occur).
- each attachment zone 12, 12 'and its strips 20', 21 ' present on the surface of the substrate 2 a limited lateral extension L. Making such sets of limited width allows to form several assembly areas. This is the case of Figure 3B, where a second assembly zone 12 'is formed, by forming other bands 21' of amorphous carbon.
- Such a limited lateral extension may also be desirable when the support layer or substrate 2 has a satisfactory surface state only over a limited extension or area comparable to (but greater than) that of the chip to be located in zone 12. .
- the hydrophobic layer here made of amorphous carbon, induces, in relation to the rest of the surface of the substrate 2, a contrast in surface tension - therefore in wettability - which allows the implementation of a self-assembly of the chips or components to to assemble.
- a complementary treatment of the surface of each of the substrates 2 may be implemented, in order to accentuate the location of the chips or components by difference in surface energy and / or wettability.
- a surface oxide layer 15 of the material of the substrate 2 can be produced by means of an oxygen plasma. This treatment causes a slight superficial etching of the amorphous carbon layer but does not affect its hydrophobic properties. It is also an advantageous aspect of the amorphous carbon for the present invention, not to form an oxide on its surface after exposure to a plasma comprising oxygen. After this treatment, a surface comprising amorphous carbon and a hydrophilic material present a significant wettability contrast to achieve a self-alignment.
- the difference between the contact angles of a drop of a liquid positioned on the amorphous carbon layer and that of a drop of the same liquid positioned on the hydrophilic material is at least about 40 ° (for example for a droplet).
- FIGS. 4A-4C represent steps for aligning a component or a chip on the zone, prepared as explained above, of a substrate according to the invention.
- FIGS. 4A-4C are based on an initial substrate of the type of FIG. 2A, but an alignment can be made in the same way from one of the substrates of FIGS. 2B and 2C, provided with one or more zones of FIG. fastener, each being delimited by a hydrophobic layer.
- This alignment is achieved thanks to the wettability contrast obtained by the previously described treatment of the substrate.
- the component is brought close to the substrate by a so-called "pick and place” technique, or more generally by any mechanical means.
- This component or this chip 3 to be assembled has, moreover, characteristics adapted to the type of assembly or bonding envisaged on the substrate 2, for example a correct flatness on the entire surface 3 'to be assembled and a particulate contamination, the lowest possible, of this surface. If this is not the case, a preparation of the surface 3 ', for example by polishing and then cleaning, makes it possible to obtain the desired characteristics.
- Another possible treatment, with a view to a hydrophilic molecular bonding, is a treatment of the oxygen plasma type, or under UV / ozone.
- the chip receives only a minimum of treatment, for example only a surface treatment. This is particularly the case when it is desired to assemble numerous chip standards with different topologies and to adapt the substrate by virtue of the shape of the amorphous carbon layer.
- the above remarks concerning the preparation of the chip will also apply in the case of the embodiment with metallic hydrophobic zone, described later in connection with FIGS. 8A-8B.
- the chip 3 is approached from the assembly site 12. It is therefore possible to implement an alignment or a coarse positioning of the chip by a method such as a random method, which makes it possible to perform a fast distribution but not very precise.
- a drop 13 of an interface liquid, preferably water, present on the attachment zone allows the chip 3 to be precisely aligned with the pattern 12.
- FIGS. 4B and 4C represent the same step, but for a chip 3 with pads 5 interconnections for bonding to the substrate via the material of layer 20.
- the chip also has, on the surface of the interconnect pads, a thin layer 5 'made of a low-temperature fusion metal, which will make it possible to make interconnections for a connection with the substrate, for example by thermo-compression.
- these pads are indium or copper balls. These pads may also be only connection pads or contact and no fixing, the latter being provided by the portion of the chip facing the assembly area 12.
- the drop 13 of interface liquid may be used to promote the realization of this alignment step.
- FIGS. 5A-5C show, for each of the situations illustrated in FIGS. 4A-4C, assemblies thus obtained, of a chip with a substrate.
- the component or the chip 3 is located in the attachment zone 12 created previously.
- a molecular bonding assembly is preferably produced.
- the optional oxide layer 15 promotes such bonding.
- the realization of connections 5, 5 'of the chip can be obtained by a different method (for example: use of balls or copper connections).
- thermo-compression for example by a metal bonding with copper in particular.
- This Thermo-compression bonding can take place in the hydrophilic zone, or not. In the latter case, there is a difference between, on the one hand, the contact zones, for example of the electric type, and, on the other hand, the mechanical fixing zones (by thermo-compression).
- At least partial removal of the hydrophobic layer 20, 20 ', 21' can then be carried out. This results in the structures of FIGS. 6A-6C, respectively for each of the assemblies of FIGS. 5A-5C. Again, there may be several chips or components on one floor.
- any connections between the component or chip (or components or chips) and the substrate can then be established.
- a chemical treatment is for example a treatment with oxygen plasma or containing a sufficient proportion of oxygen.
- FIG. 6B shows the case of partial removal of this layer 20, also by chemical surface treatment leaving the assembly unchanged. Portions 20i of the layer 20 are maintained, to make a bond or a functional link between the pads 5 and the surface 2 'of the substrate 2, and more particularly its pads 4, 6. In order to ensure such a function, the carbon can have been doped, for example to be a driver.
- FIG. 6C after complete removal of the layer 20, the temperature is brought to a level allowing the low temperature melting of the metal 5 ', in order to make the connection or the functional link 5''between the pads 5 and the surface 2 of the substrate 2, and more particularly its pads 4, 6.
- FIG. 7A a recovery 2Oi of deposition of the amorphous carbon on the assembly obtained in FIG. 6A is carried out.
- this layer of amorphous carbon it is also possible not to eliminate this layer of amorphous carbon (thus leaving the structure of Figure 5A in the state), which makes it possible not to make a recovery then.
- FIGS. 7B and 7C show cases of deposition of a layer 2 0 2 of dielectric material on the layer 2 0 1 of amorphous carbon to return to a flat non-conductive surface outside the attachment zone.
- Figure 7C it's the same technique, but it is the chip described in Figure 4B which is implemented.
- a deposit 20 of a material other than amorphous carbon may be produced directly on the substrate 2 after removal of the amorphous carbon layer 20.
- the material of this layer 2O2 can be modified so that a functional link can cross it.
- vias 4-2 and 6-2 have been made in the layer 20-2 to reach the substrate 2 through the latter.
- the formation of vias is also feasible with the structures of Figures 7B and 7C.
- a new plane can be formed at the upper face of the chip 3 integrated on the substrate 2 (or of the non-assembled face with the substrate), or above this upper face, for a new integration step, by depositing a material such as a dielectric, or Amorphous Carbon, followed by polishing type CMP.
- a material such as a dielectric, or Amorphous Carbon, followed by polishing type CMP.
- the steps described above can be performed: formation of a hydrophilic zone delimited by a hydrophobic zone, then alignment and assembly of a chip or a component on the hydrophilic zone.
- a structure such as that of FIG. 1C is thus obtained.
- a method for producing the substrate structures, with a layer of hydrophobic material, here in a metallic material, will be described in connection with FIGS. 8A-8B, from the structures of FIGS. 2D and 2E, and thus substrate structures possibly with pads and possibly again with layers 7, 9, 7 ', 9' which provide electrical and / or optical and / or thermal.
- the homogeneous or heterogeneous surface 2 'of the substrate or of the layer 2 may have undergone one or more treatments in order to prepare it for alignment and gluing, to achieve alignment a component or a chip 3, with a self-assembly zone, then the assembly by gluing, of the component or the chip 3 on this zone,
- the surface 2 'of the substrate may comprise an additional layer making it easier to glue a component or a chip and / or to reinforce the wettability contrast between the zone 12 and its periphery.
- the surface 2 'of the substrate 2 has, here again, variations in wettability on the surface, because of the presence on this surface of two different materials (one of which is metallic), whose wettability properties are different, which results from either the nature of these materials or a specific treatment of all or part of the surface.
- the metallic material 120 may be that of a conductor, provided on the surface of the substrate to achieve a specific electrical function. By for example, it may be the definition of the shape of an antenna on the surface of the substrate 2.
- the surface may be PET, and be provided with a metal antenna; or it is a silicon oxide surface with metal areas.
- component 3 will be located in the attachment zone , hydrophilic 12, which is delimited by the metallic and hydrophobic part 120, which surrounds it.
- the component or the chip 3 to be assembled has characteristics adapted to the type of assembly or bonding envisaged on the substrate 2, possibly this results from a preparation of the surface 3 'which makes it possible to obtain the desired characteristics.
- a drop of an interface liquid preferably water
- an interface liquid can be arranged by manual or robotic means on the attachment zone or in his neighborhood.
- the drop of fluid deposited on the zone of attachment or in its vicinity locates itself in this zone.
- the volume of fluid deposited can induce a thickness of water which exceeds that of a possible topology due for example to metallic patterns which delimit the hydrophilic zone 12.
- the drop 13 disposed and correctly located acts as a restoring force by minimizing the surface energy of the drop.
- a chip 3 can then be brought manually or by a robotic device or by a so-called "pick and place” technique, or more generally by any mechanical means. Or, it implements a alignment or a coarse positioning of the chip by a method such as a random process, which allows for a fast distribution but not accurate.
- FIGS. 8A and 8B show this step, in the case of a substrate and a chip respectively of the type of FIG ID or IE.
- the alignment of the chip 3 vis-à-vis the zone 12 depends on the quality of the confinement, so the difference in wettability between the two materials. After the chip has been placed on the drop of water, it corrects the misalignment induced by a restoring force.
- This force is the motor of the final alignment of the component 3 and the alignment zone 12 and depends on the wettability contrast between the attachment zone 12 and its hydrophobic periphery, that this contrast is natural or induced by a possible surface treatment.
- the interface liquid is then removed.
- a component or a chip can also be glued by thermo-compression (for example by a metallic bonding with copper).
- Figures 9A and 10A each represent, in top view, an attachment zone 12 and its hydrophobic zone 120, 120 'which delimits it.
- the zones 120 are connected to other conductors 121.
- FIGS. 9B and 10B each represent the same area as, respectively, FIGS. 9A and 10A, but with a component 3 positioned and fixed on the hydrophilic zone.
- a fluid 13 that aids self-assembly in the context of the present invention is hydrophilic. We then put a very small volume, a few microdrops. In US6507989, on the contrary, the assembly is done in liquid (with liquid bathing all surfaces): a bonding of the type used in the context of the present invention (molecular bonding or thermocompression ) is not possible. In the article by FUKUSHIMA T AND AL: "New three-dimensional integration technology using self- technical assembly ", Electron devices meeting, December 5, 2005, pages 348-351, the assembly does not take place by molecular bonding at the level of the attachment stud.As illustrated in FIG.
- first zones at the level of first zones ("microbumps") and then the assembly is done by injection of an adhesive substance (see Figure 4d for example and the description of Figure 9 in particular) which spreads everywhere except at these first areas
- an adhesive substance see Figure 4d for example and the description of Figure 9 in particular
- the assembly is therefore not, as in the present invention, carried out by molecular bonding or thermocompression at the level of the alignment zones
- the glues used are, moreover, sources of pollution. and do not allow the achievement of subsequent technological steps at high temperatures.
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Micromachines (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
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Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0852370A FR2929864B1 (en) | 2008-04-09 | 2008-04-09 | SELF-ASSEMBLY OF CHIPS ON A SUBSTRATE |
PCT/EP2009/054115 WO2009124921A1 (en) | 2008-04-09 | 2009-04-07 | Self-assembly of chips by substrate |
Publications (1)
Publication Number | Publication Date |
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EP2260508A1 true EP2260508A1 (en) | 2010-12-15 |
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ID=40010852
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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EP09731239A Withdrawn EP2260508A1 (en) | 2008-04-09 | 2009-04-07 | Self-assembly of chips by substrate |
Country Status (5)
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US (1) | US8642391B2 (en) |
EP (1) | EP2260508A1 (en) |
JP (1) | JP5656825B2 (en) |
FR (1) | FR2929864B1 (en) |
WO (1) | WO2009124921A1 (en) |
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US8283208B2 (en) * | 2004-12-28 | 2012-10-09 | Mitsumasa Koyanagi | Method and apparatus for fabricating integrated circuit device using self-organizing function |
FR2929758B1 (en) * | 2008-04-07 | 2011-02-11 | Commissariat Energie Atomique | TRANSFER METHOD USING A FERROELECTRIC SUBSTRATE |
DE102009050703B3 (en) * | 2009-10-26 | 2011-04-21 | Evonik Goldschmidt Gmbh | Method for self-assembly of electrical, electronic or micromechanical components on a substrate and product produced therewith |
JP5732652B2 (en) * | 2009-11-04 | 2015-06-10 | ボンドテック株式会社 | Joining system and joining method |
JP2011192663A (en) * | 2010-03-11 | 2011-09-29 | Tokyo Electron Ltd | Mounting method and mounting device |
TWI446420B (en) * | 2010-08-27 | 2014-07-21 | Advanced Semiconductor Eng | Releasing carrier method for semiconductor process |
FR2993096B1 (en) | 2012-07-03 | 2015-03-27 | Commissariat Energie Atomique | DEVICE AND METHOD FOR INDIVIDUAL SUPPORT OF COMPONENTS |
KR101681437B1 (en) * | 2012-09-23 | 2016-11-30 | 도호쿠 다이가쿠 | Chip support substrate, method for supporting chip, three-dimensional integrated circuit, assembly device, and method for manufacturing three-dimensional integrated circuit |
JP6044592B2 (en) * | 2014-05-29 | 2016-12-14 | トヨタ自動車株式会社 | Multilayer wiring board and manufacturing method thereof |
KR101672781B1 (en) | 2014-11-18 | 2016-11-07 | 피에스아이 주식회사 | Nano-scale LED for horizontal arrayed assembly, method for manufacturing thereof and horizontal arrayed assembly comprising the same |
KR101713818B1 (en) | 2014-11-18 | 2017-03-10 | 피에스아이 주식회사 | Electrode assembly comprising nano-scale LED and method for manufacturing thereof |
KR101730977B1 (en) * | 2016-01-14 | 2017-04-28 | 피에스아이 주식회사 | Nano-scale LED electrode assembly |
US9947611B2 (en) * | 2016-01-29 | 2018-04-17 | Palo Alto Research Center Incorporated | Through hole arrays for flexible layer interconnects |
WO2017159401A1 (en) * | 2016-03-17 | 2017-09-21 | 東京エレクトロン株式会社 | Method for aligning chip components relative to substrate by using liquid |
KR102608419B1 (en) * | 2016-07-12 | 2023-12-01 | 삼성디스플레이 주식회사 | Display Apparatus and Method for manufacturing the same |
FR3063832B1 (en) * | 2017-03-08 | 2019-03-22 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | METHOD OF SELF-ASSEMBLING MICROELECTRONIC COMPONENTS |
FR3065321B1 (en) * | 2017-04-14 | 2019-06-21 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | METHOD FOR MANUFACTURING EMISSIVE LED DISPLAY DEVICE |
KR102513267B1 (en) | 2017-10-13 | 2023-03-23 | 삼성디스플레이 주식회사 | Display apparatus and method of manufacturing the same |
US10777527B1 (en) * | 2019-07-10 | 2020-09-15 | Mikro Mesa Technology Co., Ltd. | Method for transferring micro device |
JP2024097401A (en) * | 2023-01-06 | 2024-07-19 | ヤマハロボティクスホールディングス株式会社 | Semiconductor chip alignment method, bonding method, semiconductor device, and electronic component manufacturing system |
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US8642391B2 (en) | 2014-02-04 |
US20110033976A1 (en) | 2011-02-10 |
WO2009124921A1 (en) | 2009-10-15 |
FR2929864A1 (en) | 2009-10-16 |
JP5656825B2 (en) | 2015-01-21 |
FR2929864B1 (en) | 2020-02-07 |
JP2011517104A (en) | 2011-05-26 |
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