EP2230208A1 - Electroplating mould and method for manufacturing the same - Google Patents
Electroplating mould and method for manufacturing the same Download PDFInfo
- Publication number
- EP2230208A1 EP2230208A1 EP20100154909 EP10154909A EP2230208A1 EP 2230208 A1 EP2230208 A1 EP 2230208A1 EP 20100154909 EP20100154909 EP 20100154909 EP 10154909 A EP10154909 A EP 10154909A EP 2230208 A1 EP2230208 A1 EP 2230208A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- cavity
- mold
- layer
- lower layer
- electrically insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims abstract description 41
- 238000009713 electroplating Methods 0.000 title claims description 27
- 238000005530 etching Methods 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000011248 coating agent Substances 0.000 claims abstract description 22
- 238000000576 coating method Methods 0.000 claims abstract description 22
- 238000000206 photolithography Methods 0.000 claims abstract description 10
- 239000002210 silicon-based material Substances 0.000 claims abstract description 7
- 238000000151 deposition Methods 0.000 claims description 16
- 230000008021 deposition Effects 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 238000000708 deep reactive-ion etching Methods 0.000 description 5
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 4
- 230000032798 delamination Effects 0.000 description 4
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000012550 audit Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/10—Moulds; Masks; Masterforms
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C99/00—Subject matter not provided for in other groups of this subclass
- B81C99/0075—Manufacture of substrate-free structures
- B81C99/009—Manufacturing the stamps or the moulds
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/03—Microengines and actuators
- B81B2201/035—Microgears
Definitions
- the invention relates to a mold for manufacturing a micromechanical part by electroplating and its manufacturing process.
- LIGA-type processes (well-known abbreviation from the German "rƶntgenLIthographie, Galvanoformung & Abformungā) are more recent. They consist in forming a mold by photolithography of a photosensitive resin and then electroplating a metal deposit such as nickel. The accuracy of such LIGA processes is much better than that of a conventional mold obtained, for example, by machining. Such accuracies thus allow the manufacture of micromechanical parts especially for watch movements that were previously unthinkable.
- the purpose of the present invention is to overcome all or part of the disadvantages mentioned above by proposing an alternative mold offering at least the same manufacturing precisions and authorizing the manufacture of multi-level and / or large-pitched parts.
- the invention relates to a mold intended to manufacture a micromechanical part by electroplating, characterized in that it comprises a substrate comprising an upper layer and an electrically conductive lower layer joined together by an electrically insulating intermediate layer, the upper layer comprising at least one cavity revealing a portion of the lower layer of said substrate and having electrically insulating walls for growing an electrolytic deposit in said at least one cavity.
- the invention relates to a method of manufacturing a micromechanical part 41, 41 ', 41 "by electroplating, method 1 preferably comprises a method of manufacturing a mold 39, 39', 39 "Follow the steps of electroplating 5 and release 7 of the part 41, 41 ', 41" of said mold.
- the manufacturing process 3 of the mold comprises successive steps for manufacturing a mold 39, 39 ', 39 "preferably comprising silicon-based materials.
- a first step 10 of the method 3 consists in providing a substrate 9, 9 'comprising an upper layer 21, 21' and a lower layer 23, 23 'made of electrically micro-machinable materials. conductors, secured together by an intermediate layer 22, 22 'electrically insulating as illustrated in FIGS. figures 1 and 8 .
- the substrate 9, 9 ' is a S.O.I. (Well known abbreviation from the English term "Silicon On Isulator").
- the upper layers 21, 21 'and lower 23, 23' are sufficiently doped crystalline silicon to be electrically conductive and the intermediate layer of silicon dioxide.
- the method 3 comprises two distinct embodiments from the step 11 respectively represented by a triple line and a single line to the figure 13 .
- a mask 15 and then a protective mask 24 are structured on the upper conductive layer 21 as illustrated in FIG. figure 2 .
- the mask 15 comprises at least one pattern 27 which does not cover the upper layer 21.
- the mask 24, which completely covers the mask 15 comprises at least one pattern 26 which does not cover the upper layer 21.
- the mask 15 may be made by depositing a silicon oxide layer to form said mask to a predetermined height. Then, the mask 24 may, for example, be obtained by photolithography using a photoresist covering the mask 15.
- the upper layer 21 is etched until the intermediate layer 22 is discovered.
- the etching step 2 preferably comprises an anisotropic dry attack of the deep reactive ion etching type ( DRIE from the English term "Deep Reactive Ion Etching").
- a first step of step 2 an anisotropic etching is carried out in the upper layer 21 according to the pattern 26 of the mask 24. This etching makes it possible to start the etching of at least one cavity 25 in the upper layer 21 on a part of its thickness.
- a second step the mask 24 is removed and then a second anisotropic etching is carried out according to the pattern 27 of the mask 15 still present on the upper layer 21. The second etching makes it possible to continue the etching of said at least one cavity 25, but also of begin etching at least one recess 28 which communicates with said at least one cavity 25 while being of larger section.
- a fourth step 4 the mask 15 is removed. So, as visible at the figure 3 at the end of the fourth step 4, the upper layer 21 is etched throughout its thickness of said at least one cavity 25 and on an upper part of its thickness of said at least one recess 28.
- an electrically insulating coating 30 is deposited by covering the upper assembly of the substrate 9 as illustrated in FIG. figure 4 .
- the coating 30 is obtained by oxidation of the top of the etched upper layer 21 and the intermediate layer 22.
- Step 8 a directional etching of the coating 30 and the intermediate layer 22 is performed.
- Step 8 is intended to limit the presence of insulating layers only at each vertical wall formed in the upper layer 21, that is to say the walls 31 and 32 respectively of said at least one cavity 25 and said least one recess 28.
- the vertical component of the etching phenomenon is favored with respect to the horizontal composition, by modulating, for example, the pressure in the chamber (pressure work very low), in a RIE reactor.
- Such an engraving may, for example, be of the "ion milling" or "sputter etchingā type.
- step 8 the bottom of the cavity 25 discovers the lower layer 23 electrically conductive and the bottom of the recess 28 discovers the upper layer 21 also conductive.
- an attachment layer on the bottom of each cavity 25 and / or on the bottom of each recess 28 may be provided.
- the bonding layer could then consist of a metal such as CrAu alloy.
- a rod 29 is mounted to directly form the axis hole 42 of the micromechanical part 41 during electroplating step 5.
- This has the advantage not only of not having to machine part 41 after electroplating is completed but also to be able to make any shape of inner section, uniformly or otherwise, over the entire height of hole 42.
- the rod 29 is obtained, for example, using a photolithography process of a photosensitive resin.
- step 8 the manufacturing process 3 of the mold 39 is finished and the manufacturing process 1 of the micromechanical part continues with the electroplating and release 7 steps of FIG. the piece 41 of the mold 39.
- the electroplating step 5 is carried out by connecting the deposition electrode to the lower layer 23 of the mold 39 so as to firstly grow an electrolytic deposit in the cavity 25 of said mold and then, only in a second step, in the 'recess 28 as illustrated in the figure 6 .
- the electrolytic deposit when it is flush with the upper part of the cavity 25, it electrically connects the upper layer 21 by, optionally, its attachment layer, which allows the continuation of the growth of the deposit sure the assembly of the recess 28.
- the invention allows the production of parts 41 with great slenderness, that is to say when the section of the cavity 25 is much smaller than that of the recess 28, avoiding the problems of delamination even with a nickel-phosphorus material at, for example, 12% phosphorus.
- the manufacturing method 1 ends with step 7, in which the part 41 formed in the cavity 25 and then in the recess 28 is released from the mold 39.
- the release step 7 can, for example, be performed by etching layers 23 and 21.
- the micromechanical part 41 obtained has two levels 43, 45 of different shape each in a perfectly independent thickness and having a single pin hole 42.
- Such a micromechanical part 41 could, for example, be a coaxial escapement wheel or an escape wheel assembly 43 - pinion 45 having a geometrical precision of the order of a micrometer but also an ideal referencing that is to say to say a perfect positioning between said levels.
- the method 3 comprises a second step 11, consisting of structuring at least one mask 24 'of protection on the upper conductive layer 21' as illustrated in FIG. figure 8 .
- the mask 24 ' has at least one pattern 26' which does not cover the upper layer 21 '.
- Such a mask 24 'can for example, be obtained by photolithography using a photoresist.
- the upper layer 21 ' is etched until discovering the intermediate layer 22'.
- the etching step 12 preferably comprises an anisotropic dry etching of the deep reactive ion etching (DRIE) type. The anisotropic etching is performed in the upper layer 21 'according to the pattern 26' of the mask 24 '.
- DRIE deep reactive ion etching
- a fourth step 14 the mask 24 'is removed. So, as visible at the figure 9 at the end of the fourth step 14, the upper layer 21 'is etched throughout its thickness of at least one cavity 25'.
- an electrically insulating coating 30 ' is deposited by covering the upper assembly of the substrate 9' as illustrated in FIG. figure 10 .
- the coating 30 ' is obtained by oxidation of the top of the upper layer 21' etched and the intermediate layer 22 '.
- Step 18 a directional etching of the coating 30 'and the intermediate layer 22' is carried out.
- Step 18 is intended to limit the presence of insulating layers only at each vertical wall formed in the upper layer 21 ', that is to say the walls 31' of said at least one cavity 25 '.
- an attachment layer on the bottom of each cavity 25 'and / or on the top of the upper layer 21' may be provided.
- the bonding layer could then consist of a metal such as CrAu alloy.
- a rod can be mounted to form directly the axis hole of the micromechanical part during electroplating step 5 with the same advantages as mentioned above.
- step 18 the manufacturing method 3 of the mold 39 'is finished and the manufacturing process 1 of the micromechanical part continues with the electroplating and release steps 7 of the mold part 39 '.
- Step 5 of electroplating is performed by connecting the deposition electrode to the lower layer 23 'of the mold 39' in order to grow an electrolytic deposit in the cavity 25 'of the mold 39'.
- the manufacturing method 1 ends with the step 7 similar to that explained in the first embodiment, in which the piece formed in the cavity 25 'is released from the mold 39'.
- the micromechanical part obtained has a single level of identical shape over its entire thickness and may include an axis hole.
- Such a micromechanical part could, for example, be an escape wheel or an escapement anchor or even a pinion having a geometric precision of the order of a micrometer.
- the manufacturing method 3 of the mold 39 ' has a further step 20 for forming at least a second level of the mold 39' as illustrated in FIG. figure 12 .
- the second level is achieved by mounting a piece 27 ', having walls 32' electrically insulating, on the upper layer 21 'which has not been removed in step 12.
- the added piece 27 ' forms at least one recess 28' of larger section than the removed portions 25 ', for example, using a photolithography process of a photoresist.
- Exhibit 27 'could also include a insulating silicon material previously etched and then secured to the conductive layer 21 '.
- step 20 the manufacturing method 3 of the mold 39 'is completed and the manufacturing process 1 of the micromechanical part continues with the steps of electroplating 5 and release 7 of the piece 41 'of the mold 39'.
- the electroplating step 5 is carried out by connecting the deposition electrode to the lower layer 23 'of the mold 39' so as to initially grow an electrolytic deposit in the cavity 25 'of said mold, and then only in a second step in the recess 28 'as illustrated in FIG. figure 12 .
- the electrolytic deposit when it is flush with the upper part of the cavity 25 ', it electrically connects the top layer 21' with, optionally, its attachment layer, which allows the continuation of the growth. depositing on the entire recess 28 '.
- the invention allows the production of parts 41 'with great slenderness, that is to say when the section of the cavity 25' is much smaller than that of the recess 28 ', avoiding the problems of delamination even with a nickel-phosphorus material at, for example, 12% phosphorus.
- the manufacturing method 1 ends in step 7 similar to that explained in the first embodiment, in which the piece 41 'formed in the mold 39' is released.
- the micromechanical part 41 'obtained has two levels of shape each different to a perfectly independent thickness and may include a single pinhole.
- Such a micromechanical part 41 'can consequently have the same shape as that obtained by the first embodiment and thus include a geometrical precision of the order of a micrometer but also an ideal referencing, that is to say a positioning perfect between said levels.
- the variant remains identical to method 1 described above until step 8, 18 or 20 according to the embodiment used.
- the starting point of method 1 will be the example of the first embodiment as illustrated in FIG. figure 13 in triple line.
- the lower layer 23 is intended to be etched in order to form at least one second cavity 35 in the mold 39 ".
- a deposit 33 has been made in a portion of the first cavity 25 to provide an electroplating starting layer.
- this deposit 33 is carried out starting from step 5 to a predetermined thickness.
- this deposit can be carried out according to another method.
- variant of method 1 applies to the lower layer 23, steps 11, 12, 14, 16 and 18 of the second embodiment of method 3.
- the method 3 comprises a new step 11, consisting of structuring at least one mask 34 on the lower conductive layer 23 as illustrated in FIG. figure 15 .
- the mask 34 comprises at least one pattern 36 which does not cover the lower layer 23.
- Such a mask 34 may, for example, be obtained by photolithography using a photoresist.
- the layer 23 is etched according to the pattern 36 until the electrically conductive deposit 33 is discovered. Then the protective mask 34 is removed in a new step 14. Thus, as visible in FIG. figure 16 at the end of step 14, the bottom layer 23 is etched over its entire thickness with at least one cavity 35.
- an electrically insulating coating 38 is deposited by covering the bottom assembly of the substrate 9 "as shown in FIG. figure 17 .
- the coating 38 is obtained by depositing a silicon oxide on the top of the lower layer 23, for example, using a physical vapor deposition.
- a new step 18 is not necessary if only one level is added to the mold 39. Otherwise, a directional etching of the coating 38 is performed
- the new step 18 would be intended to limit the presence of insulating layer only at the level of each vertical wall 39 formed in the lower layer 23, that is to say the walls of said at least one cavity 35.
- a new step 18 is performed only to remove the oxide layer present in the bottom of the at least one cavity 35.
- a rod 37 can be mounted to directly form the hole 42 "axis of the micromechanical part 41" during the electroplating step 5 with the same advantages as mentioned above. .
- the manufacturing method 3 of the mold 39 is finished and the manufacturing process 1 of the micromechanical part continues with the electroplating and release steps 7 preferably, if the rods 29 and 37 are respectively formed in the cavities 25 and 35, they are preferably aligned, preferably the rod 37 is obtained, for example, using a photolithography process of a photosensitive resin.
- the electroplating step 5 is performed by connecting the deposition electrode to the lower layer 23 in order to grow an electrolytic deposit in the cavity 35 and also to continue the growth of the deposit in the cavity 25, then, only in a second step, in the recess 28 as illustrated in FIG. figure 18 .
- the manufacturing method 1 ends with step 7, in which the part 41 "is released from the mold 39" as explained above.
- the micromechanical part 41 "obtained has at least three levels 43", 45 āand 47ā of different shape each in a perfectly independent thickness with a single axis hole 42 ".
- Such a micromechanical part could, for example, be a coaxial escape wheel 43 ā, 45ā with its pinion 47 āor a mobile with three levels of teeth 43", 45 ā, 47ā having a geometric precision of the micrometer order but also an ideal referencing that is to say a perfect positioning between said levels.
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Abstract
Description
L'invention se rapporte Ć un moule destinĆ© Ć fabriquer une piĆØce de micromĆ©canique par galvanoplastie ainsi que son procĆ©dĆ© de fabrication.The invention relates to a mold for manufacturing a micromechanical part by electroplating and its manufacturing process.
La galvanoplastie est utilisĆ©e et connue depuis longtemps. Les procĆ©dĆ©s du type LIGA (abrĆ©viation trĆØs connue provenant de l'allemand Ā« rƶntgenLIthographie, Galvanoformung & Abformung Ā») sont plus rĆ©cents. Ils consistent Ć former un moule par photolithographie d'une rĆ©sine photosensible puis d'y faire croĆ®tre par galvanoplastie un dĆ©pĆ“t mĆ©tallique comme du nickel. La prĆ©cision de tels procĆ©dĆ©s LIGA est bien meilleure que celle d'un moule classique obtenue, par exemple, par usinage. De telles prĆ©cisions autorisent ainsi la fabrication de piĆØces de micromĆ©canique notamment pour des mouvements horlogers qui Ć©taient avant inenvisageables.Electroplating is used and known for a long time. LIGA-type processes (well-known abbreviation from the German "rƶntgenLIthographie, Galvanoformung & Abformung") are more recent. They consist in forming a mold by photolithography of a photosensitive resin and then electroplating a metal deposit such as nickel. The accuracy of such LIGA processes is much better than that of a conventional mold obtained, for example, by machining. Such accuracies thus allow the manufacture of micromechanical parts especially for watch movements that were previously unthinkable.
Cependant, de tels procĆ©dĆ©s ne sont pas adaptĆ©s pour les piĆØces de micromĆ©canique Ć grand Ć©lancement comme une roue d'Ć©chappement coaxiale en nickel - phosphore Ć , par exemple, 12% de phosphore. En effet, les dĆ©pĆ“ts Ć©lectrolytiques de ce type de piĆØce dĆ©laminent en cours de dĆ©pĆ“t en raison des contraintes internes du nickel - phosphore dĆ©posĆ© ce qui a pour consĆ©quence un dĆ©collement au niveau de son interface avec le substrat.However, such methods are not suitable for large slenderness micromechanical parts such as a nickel-phosphorus coaxial exhaust wheel with, for example, 12% phosphorus. In fact, the electrolytic deposits of this type of part delaminate during deposition because of the internal stresses of the deposited nickel - phosphor, which results in detachment at its interface with the substrate.
Le but de la prĆ©sente invention est de pallier tout ou partie les inconvĆ©nients citĆ©s prĆ©cĆ©demment en proposant un moule alternatif offrant au moins les mĆŖmes prĆ©cisions de fabrication et autorisant la fabrication de piĆØces Ć plusieurs niveaux et/ou Ć grand Ć©lancement.The purpose of the present invention is to overcome all or part of the disadvantages mentioned above by proposing an alternative mold offering at least the same manufacturing precisions and authorizing the manufacture of multi-level and / or large-pitched parts.
A cet effet, l'invention se rapporte Ć un procĆ©dĆ© de fabrication d'un moule comportant les Ć©tapes suivantes :
- a) se munir d'un substrat comportant une couche supƩrieure et une couche infƩrieure en matƩriau micro-usinable Ʃlectriquement conducteur et solidarisƩes entre elles par une couche intermƩdiaire Ʃlectriquement isolante ;
- b) graver au moins un motif dans la couche supĆ©rieure jusqu'Ć la couche intermĆ©diaire afin de former au moins une cavitĆ© dudit moule ;
- c) recouvrir la partie supĆ©rieure dudit substrat d'un revĆŖtement Ć©lectriquement isolant ;
- d) graver de maniĆØre directionnelle ledit revĆŖtement et ladite couche intermĆ©diaire afin de limiter leur prĆ©sence uniquement au niveau de chaque paroi verticale formĆ©e dans ladite couche supĆ©rieure.
- a) providing a substrate comprising an upper layer and a lower layer of electrically conductive micro-machining material and secured to one another by an electrically insulating intermediate layer;
- b) etching at least one pattern in the upper layer to the intermediate layer to form at least one cavity of said mold;
- c) covering the upper portion of said substrate with an electrically insulating coating;
- d) directionally etching said coating and said intermediate layer to limit their presence only at each vertical wall formed in said top layer.
ConformĆ©ment Ć d'autres caractĆ©ristiques avantageuses de l'invention :
- un deuxiĆØme motif est gravĆ© lors de l'Ć©tape b) afin de former au moins un Ć©videment communiquant avec ladite au moins une cavitĆ© offrant Ć ladite couche supĆ©rieure un deuxiĆØme niveau ;
- une piĆØce est montĆ©e aprĆØs l'Ć©tape d) afin de former au moins un Ć©videment communiquant avec ladite au moins une cavitĆ© offrant audit moule un deuxiĆØme niveau ;
- le procĆ©dĆ© comporte l'Ć©tape finale e) : monter une tige dans ladite au moins une cavitĆ© afin de former un trou dans la future piĆØce rĆ©alisĆ©e dans ledit moule ;
- l'Ʃtape b) comporte les phases f) : structurer au moins un masque de protection sur la couche conductrice supƩrieure, g) : rƩaliser une attaque anisotrope de ladite couche supƩrieure selon les parties non recouvertes par ledit au moins un masque de protection et h) : retirer le masque de protection ;
- le procĆ©dĆ© comporte, Ć la suite des Ć©tapes prĆ©cĆ©dentes, les Ć©tapes a') : dĆ©poser un matĆ©riau Ć©lectriquement conducteur dans le fond de ladite au moins une cavitĆ©, b'): graver un motif dans la couche infĆ©rieure jusqu'au dĆ©pĆ“t dudit matĆ©riau conducteur afin de former au moins une cavitĆ© dudit moule et c'): recouvrir l'ensemble d'un deuxiĆØme revĆŖtement Ć©lectriquement isolant ;
- le procĆ©dĆ© comporte, Ć la suite de l'Ć©tape c'), l'Ć©tape d'): graver de maniĆØre directionnelle ledit deuxiĆØme revĆŖtement afin de limiter sa prĆ©sence uniquement au niveau de chaque paroi verticale formĆ©e dans ladite couche infĆ©rieure ;
- un deuxiĆØme motif est gravĆ© lors de l'Ć©tape b') afin de former au moins un Ć©videment communiquant avec ladite au moins une cavitĆ© offrant Ć ladite couche infĆ©rieure un deuxiĆØme niveau ;
- une piĆØce est montĆ©e aprĆØs l'Ć©tape d') afin de former au moins un Ć©videment communiquant avec ladite au moins une cavitĆ© offrant audit moule un deuxiĆØme niveau ;
- le procĆ©dĆ© comporte l'Ć©tape finale e'): monter une tige dans ladite au moins une cavitĆ© de la couche infĆ©rieure afin de former un trou dans la future piĆØce rĆ©alisĆ©e dans ledit moule ;
- l'Ʃtape b') comporte les phases f) : structurer au moins un masque de protection sur la couche conductrice supƩrieure, g'): rƩaliser une attaque anisotrope de ladite couche supƩrieure selon les parties non recouvertes par ledit au moins un masque de protection et h'): retirer le masque de protection ;
- plusieurs moules sont fabriquĆ©s sur le mĆŖme substrat ;
- les couches conductrices comportent un matĆ©riau Ć base de silicium dopĆ©.
- a second pattern is etched in step b) to form at least one recess communicating with said at least one cavity providing said upper layer a second level;
- a part is mounted after step d) to form at least one recess communicating with said at least one cavity providing said mold a second level;
- the method comprises the final step e): mounting a rod in said at least one cavity to form a hole in the future part made in said mold;
- step b) comprises the phases f): structuring at least one protective mask on the upper conductive layer, g): performing an anisotropic etching of said upper layer according to the non-conducting portions covered by said at least one protective mask and h): removing the protective mask;
- the method comprises, following the preceding steps, the steps a '): depositing an electrically conductive material in the bottom of said at least one cavity, b'): etching a pattern in the lower layer until the deposition of said conductive material in order to form at least one cavity of said mold and c '): to cover the assembly with a second electrically insulating coating;
- the method comprises, following step c '), the step of): directionally embossing said second coating to limit its presence only at each vertical wall formed in said lower layer;
- a second pattern is etched in step b ') to form at least one recess communicating with said at least one cavity providing said lower layer a second level;
- a piece is mounted after step d ') to form at least one recess communicating with said at least one cavity providing said mold a second level;
- the method comprises the final step e '): mounting a rod in said at least one cavity of the lower layer to form a hole in the future part made in said mold;
- step b ') comprises the phases f): structuring at least one protective mask on the upper conductive layer, g'): performing an anisotropic etching of said upper layer according to the parts not covered by said at least one protective mask and h '): remove the protective mask;
- several molds are made on the same substrate;
- the conductive layers comprise a doped silicon-based material.
L'invention se rapporte Ć©galement Ć un procĆ©dĆ© de fabrication par galvanoplastie d'une piĆØce de micromĆ©canique, caractĆ©risĆ© en ce qu'il comprend les Ć©tapes suivantes :
- i) fabriquer un moule selon le procĆ©dĆ© conforme Ć l'une des variantes prĆ©cĆ©dentes ;
- j) rĆ©aliser une Ć©lectrodĆ©position en connectant l'Ć©lectrode Ć la couche conductrice infĆ©rieure du substrat afin de former ladite piĆØce dans ledit moule ;
- k) libĆ©rer la piĆØce dudit moule.
- i) manufacturing a mold according to the method according to one of the preceding variants;
- j) electroplating by connecting the electrode to the lower conductive layer of the substrate to form said part in said mold;
- k) releasing the part of said mold.
Enfin, l'invention se rapporte Ć un moule destinĆ© Ć fabriquer une piĆØce de micromĆ©canique par galvanoplastie, caractĆ©risĆ© en ce qu'il comporte un substrat comportant une couche supĆ©rieure et une couche infĆ©rieure Ć©lectriquement conductrices solidarisĆ©es entre elle par une couche intermĆ©diaire Ć©lectriquement isolante, la couche supĆ©rieure comportant au moins une cavitĆ© dĆ©couvrant une partie de la couche infĆ©rieure dudit substrat et comportant des parois Ć©lectriquement isolantes permettant de faire croĆ®tre un dĆ©pĆ“t Ć©lectrolytique dans ladite au moins une cavitĆ©.Finally, the invention relates to a mold intended to manufacture a micromechanical part by electroplating, characterized in that it comprises a substrate comprising an upper layer and an electrically conductive lower layer joined together by an electrically insulating intermediate layer, the upper layer comprising at least one cavity revealing a portion of the lower layer of said substrate and having electrically insulating walls for growing an electrolytic deposit in said at least one cavity.
ConformĆ©ment Ć d'autres caractĆ©ristiques avantageuses de l'invention :
- la couche supĆ©rieure comporte en outre au moins un Ć©videment situĆ© communiquant avec ladite au moins une cavitĆ© et comportant des parois Ć©lectriquement isolantes permettant de continuer le dĆ©pĆ“t Ć©lectrolytique dans ledit au moins un Ć©videment aprĆØs avoir rempli ladite au moins une cavitĆ© ;
- la couche infƩrieure comporte au moins une cavitƩ dƩcouvrant une partie de couche Ʃlectriquement conductrice dudit substrat et comportant des parois Ʃlectriquement isolantes permettant de faire croƮtre un dƩpƓt Ʃlectrolytique dans ladite au moins une cavitƩ de la couche infƩrieure ;
- la couche infĆ©rieure comporte en outre au moins un Ć©videment situĆ© communiquant avec ladite au moins une cavitĆ© de la couche infĆ©rieure et comportant des parois Ć©lectriquement isolantes permettant de continuer le dĆ©pĆ“t Ć©lectrolytique dans ledit au moins un Ć©videment aprĆØs avoir rempli ladite au moins une cavitĆ© de la couche infĆ©rieure.
- the upper layer further comprises at least one recess located communicating with said at least one cavity and having electrically insulating walls for continuing the electrolytic deposition in said at least one recess after filling said at least one cavity;
- the lower layer comprises at least one cavity revealing an electrically conductive layer portion of said substrate and having electrically insulating walls for growing an electrolytic deposit in said at least one cavity of the lower layer;
- the lower layer further comprises at least one recess located communicating with said at least one cavity of the lower layer and having electrically insulating walls for continuing the electrolytic deposition in said at least one a recess after filling said at least one cavity of the lower layer.
D'autres particularitĆ©s et avantages ressortiront clairement de la description qui en est faite ci-aprĆØs, Ć titre indicatif et nullement limitatif, en rĆ©fĆ©rence aux dessins annexĆ©s, dans lesquels :
- les
figures 1 Ć 7 sont des reprĆ©sentations des Ć©tapes successives d'un procĆ©dĆ© de fabrication d'une piĆØce de micromĆ©canique selon un premier mode de rĆ©alisation de l'invention ; - les
figures 8 Ć 12 sont des reprĆ©sentations des Ć©tapes successives d'un procĆ©dĆ© de fabrication d'une piĆØce de micromĆ©canique selon un deuxiĆØme mode de rĆ©alisation de l'invention ; - la
figure 13 est un schĆ©ma fonctionnel d'un procĆ©dĆ© de fabrication d'une piĆØce de micromĆ©canique selon l'invention ; - les
figures 14 Ć 19 sont des reprĆ©sentations des Ć©tapes successives d'un procĆ©dĆ© de fabrication d'une piĆØce de micromĆ©canique selon une variante de l'invention.
- the
Figures 1 to 7 are representations of the successive steps of a method of manufacturing a micromechanical part according to a first embodiment of the invention; - the
Figures 8 to 12 are representations of the successive steps of a method of manufacturing a micromechanical part according to a second embodiment of the invention; - the
figure 13 is a block diagram of a method of manufacturing a micromechanical part according to the invention; - the
Figures 14 to 19 are representations of the successive steps of a method of manufacturing a micromechanical component according to a variant of the invention.
Comme visible Ć la
Le procĆ©dĆ© de fabrication 3 du moule comporte des Ć©tapes successives destinĆ©es Ć fabriquer un moule 39, 39', 39" comportant, prĆ©fĆ©rentiellement, des matĆ©riaux Ć base de silicium.The
Une premiĆØre Ć©tape 10 du procĆ©dĆ© 3 consiste Ć se munir d'un substrat 9, 9' comportant une couche supĆ©rieure 21, 21' et une couche infĆ©rieure 23, 23', en matĆ©riaux micro-usinables Ć©lectriquement conducteurs, solidarisĆ©es entre elles par une couche intermĆ©diaire 22, 22' Ć©lectriquement isolante comme illustrĆ© aux
PrĆ©fĆ©rentiellement, le substrat 9, 9' est un S.O.I. (abrĆ©viation trĆØs connue provenant des termes anglais Ā« Silicon On Isulator Ā»). De plus, les couches supĆ©rieure 21, 21' et infĆ©rieure 23, 23' sont en silicium cristallin suffisamment dopĆ© afin d'ĆŖtre Ć©lectriquement conductrices et la couche intermĆ©diaire en dioxyde de silicium.Preferably, the
Selon l'invention, le procĆ©dĆ© 3 comporte deux modes de rĆ©alisation distincts Ć partir de l'Ć©tape 11 respectivement reprĆ©sentĆ© par un trait triple et un trait simple Ć la
Selon un premier mode de rĆ©alisation, lors de la deuxiĆØme Ć©tape 11, un masque 15 puis un masque 24 de protection sont structurĆ©s sur la couche conductrice supĆ©rieure 21 comme illustrĆ© Ć la
A titre d'exemple, le masque 15 peut ĆŖtre rĆ©alisĆ© par dĆ©pĆ“t d'une couche d'oxyde de silicium afin de former ledit masque jusqu'Ć une hauteur prĆ©dĆ©terminĆ©e. Ensuite, le masque 24 peut, par exemple, ĆŖtre obtenu par photolithographie Ć l'aide d'une rĆ©sine photosensible en recouvrement du masque 15.For example, the
Selon le premier mode de rĆ©alisation visible en trait triple Ć la
Dans un premier temps de l'Ć©tape 2, on effectue une attaque anisotrope dans la couche supĆ©rieure 21 selon le motif 26 du masque 24. Cette attaque permet de commencer la gravure d'au moins une cavitĆ© 25 dans la couche supĆ©rieure 21 sur une partie de son Ć©paisseur. Dans un deuxiĆØme temps, on retire le masque 24 puis on effectue une deuxiĆØme attaque anisotrope selon le motif 27 du masque 15 encore prĆ©sent sur la couche supĆ©rieure 21. La deuxiĆØme attaque permet de continuer la gravure de ladite au moins une cavitĆ© 25 mais Ć©galement de commencer la gravure d'au moins un Ć©videment 28 qui communique avec ladite au moins une cavitĆ© 25 tout en Ć©tant de plus grande section.In a first step of
Dans une quatriĆØme Ć©tape 4, le masque 15 est retirĆ©. Ainsi, comme visible Ć la
Dans une cinquiĆØme Ć©tape 6, un revĆŖtement 30 Ć©lectriquement isolant est dĆ©posĆ© en recouvrant l'ensemble supĆ©rieur du substrat 9 comme illustrĆ© Ć la
Selon une sixiĆØme Ć©tape 8, un gravage directionnel du revĆŖtement 30 et de la couche intermĆ©diaire 22 est rĆ©alisĆ©. L'Ć©tape 8 est destinĆ©e Ć limiter la prĆ©sence de couches isolantes uniquement au niveau de chaque paroi verticale formĆ©e dans la couche supĆ©rieure 21, c'est-Ć -dire les parois 31 et 32 respectivement de ladite au moins une cavitĆ© 25 et dudit au moins un Ć©videment 28. Selon l'invention, lors d'un gravage directionnel ou anisotrope, la composante verticale du phĆ©nomĆØne de gravure est favorisĆ©e par rapport Ć la composition horizontale, en modulant, par exemple, la pression dans la chambre (travail Ć pression trĆØs basse), dans un rĆ©acteur RIE. Un tel gravage peut, Ć titre d'exemple, ĆŖtre du type Ā« ion milling Ā» ou Ā« sputter etching Ā».According to a
En rĆ©alisant cette Ć©tape 8 et comme illustrĆ© Ć la
Afin d'amĆ©liorer l'accrochage de la future galvanoplastie, une couche d'accrochage sur le fond de chaque cavitĆ© 25 et/ou sur le fond de chaque Ć©videment 28 peut ĆŖtre prĆ©vue. La couche d'accrochage pourrait alors consister en un mĆ©tal comme de l'alliage CrAu.In order to improve the attachment of the future electroplating, an attachment layer on the bottom of each
PrĆ©fĆ©rentiellement, lors de la sixiĆØme Ć©tape 8, comme illustrĆ© Ć la
Dans le premier mode de rĆ©alisation, Ć la suite de l'Ć©tape 8, le procĆ©dĆ© de fabrication 3 du moule 39 est terminĆ© et le procĆ©dĆ© de fabrication 1 de la piĆØce de micromĆ©canique se poursuit par les Ć©tapes de galvanoplastie 5 et de libĆ©ration 7 de la piĆØce 41 du moule 39.In the first embodiment, following
L'Ć©tape 5 de galvanoplastie est rĆ©alisĆ©e en connectant l'Ć©lectrode de dĆ©pĆ“t Ć la couche infĆ©rieure 23 du moule 39 afin de faire croĆ®tre dans un premier temps un dĆ©pĆ“t Ć©lectrolytique dans la cavitĆ© 25 dudit moule puis, seulement dans un deuxiĆØme temps, dans l'Ć©videment 28 comme illustrĆ© Ć la
En effet, avantageusement selon l'invention, lorsque le dĆ©pĆ“t Ć©lectrolytique affleure de la partie supĆ©rieure de la cavitĆ© 25, il connecte Ć©lectriquement la couche supĆ©rieure 21 par, Ć©ventuellement, sa couche d'accrochage, ce qui permet la continuation de la croissance du dĆ©pĆ“t sur l'ensemble de l'Ć©videment 28. Avantageusement, l'invention permet la rĆ©alisation de piĆØces 41 Ć grand Ć©lancement, c'est-Ć -dire quand la section de la cavitĆ© 25 est beaucoup plus petite que celle de l'Ć©videment 28, en Ć©vitant les problĆØmes de dĆ©collement mĆŖme avec un matĆ©riau en nickel - phosphore Ć , par exemple, 12% de phosphore.Indeed, advantageously according to the invention, when the electrolytic deposit is flush with the upper part of the
En effet, grĆ¢ce Ć l'utilisation du silicium comme couches conductrices 21, 23, et Ć©ventuellement leur couche d'accrochage, les phĆ©nomĆØnes de dĆ©lamination aux interfaces sont diminuĆ©s ce qui Ć©vite les dĆ©collements induits par les contraintes internes du matĆ©riau Ć©lectrodĆ©posĆ©.Indeed, thanks to the use of silicon as
Selon le premier mode de rĆ©alisation, le procĆ©dĆ© de fabrication 1 se termine par l'Ć©tape 7, dans laquelle la piĆØce 41 formĆ©e dans la cavitĆ© 25 puis dans l'Ć©videment 28 est libĆ©rĆ©e du moule 39. L'Ć©tape 7 de libĆ©ration peut, par exemple, ĆŖtre effectuĆ©e par gravure des couches 23 et 21. Selon ce premier mode de rĆ©alisation, on comprend comme illustrĆ© Ć la
Une telle piĆØce de micromĆ©canique 41 pourrait, par exemple, ĆŖtre une roue d'Ć©chappement coaxiale ou un ensemble roue d'Ć©chappement 43 - pignon 45 comportant une prĆ©cision gĆ©omĆ©trique de l'ordre du micromĆØtre mais Ć©galement un rĆ©fĆ©rencement idĆ©al c'est-Ć -dire un positionnement parfait entre lesdits niveaux.Such a
Selon un deuxiĆØme mode de rĆ©alisation de l'invention, le procĆ©dĆ© 3 comporte une deuxiĆØme Ć©tape 11, consistant Ć structurer au moins un masque 24' de protection sur la couche conductrice supĆ©rieure 21' comme illustrĆ© Ć la
Dans une troisiĆØme Ć©tape 12, la couche supĆ©rieure 21' est gravĆ©e jusqu'Ć dĆ©couvrir la couche intermĆ©diaire 22'. Selon l'invention, l'Ć©tape 12 de gravage comporte, de maniĆØre prĆ©fĆ©rĆ©e, une attaque sĆØche anisotrope du type gravage ionique rĆ©actif profond (DRIE). L'attaque anisotrope est effectuĆ©e dans la couche supĆ©rieure 21' selon le motif 26' du masque 24'.In a
Dans une quatriĆØme Ć©tape 14, le masque 24' est retirĆ©. Ainsi, comme visible Ć la
Dans une cinquiĆØme Ć©tape 16, un revĆŖtement 30' Ć©lectriquement isolant est dĆ©posĆ© en recouvrant l'ensemble supĆ©rieur du substrat 9' comme illustrĆ© Ć la
Selon une sixiĆØme Ć©tape 18, un gravage directionnel du revĆŖtement 30' et de la couche intermĆ©diaire 22' est rĆ©alisĆ©. L'Ć©tape 18 est destinĆ©e Ć limiter la prĆ©sence de couches isolantes uniquement au niveau de chaque paroi verticale formĆ©e dans la couche supĆ©rieure 21', c'est-Ć -dire les parois 31' de ladite au moins une cavitĆ© 25'. En rĆ©alisant cette Ć©tape 18 et comme illustrĆ© Ć la
Comme dans le premier mode de rĆ©alisation, afin d'amĆ©liorer l'accrochage de la future galvanoplastie, une couche d'accrochage sur le fond de chaque cavitĆ© 25' et/ou sur le dessus de la couche supĆ©rieure 21' peut ĆŖtre prĆ©vue. La couche d'accrochage pourrait alors consister en un mĆ©tal comme de l'alliage CrAu.As in the first embodiment, in order to improve the adhesion of the future electroplating, an attachment layer on the bottom of each cavity 25 'and / or on the top of the upper layer 21' may be provided. The bonding layer could then consist of a metal such as CrAu alloy.
Lors de la sixiĆØme Ć©tape 18, comme expliquĆ© pour le premier mode de rĆ©alisation des
Dans le deuxiĆØme mode de rĆ©alisation, Ć la suite de l'Ć©tape 18, le procĆ©dĆ© de fabrication 3 du moule 39' est terminĆ© et le procĆ©dĆ© de fabrication 1 de la piĆØce de micromĆ©canique se poursuit par les Ć©tapes de galvanoplastie 5 et de libĆ©ration 7 de la piĆØce du moule 39'.In the second embodiment, following
L'Ć©tape 5 de galvanoplastie est rĆ©alisĆ©e en connectant l'Ć©lectrode de dĆ©pĆ“t Ć la couche infĆ©rieure 23' du moule 39' afin de faire croĆ®tre un dĆ©pĆ“t Ć©lectrolytique dans la cavitĆ© 25' du moule 39'.
Selon le deuxiĆØme mode de rĆ©alisation, le procĆ©dĆ© de fabrication 1 se termine par l'Ć©tape 7 similaire Ć celle expliquĆ©e dans le premier mode de rĆ©alisation, dans laquelle la piĆØce formĆ©e dans la cavitĆ© 25' est libĆ©rĆ©e du moule 39'. Selon ce deuxiĆØme mode de rĆ©alisation, on comprend que la piĆØce de micromĆ©canique obtenue comporte un seul niveau de forme identique selon toute son Ć©paisseur et pouvant comporter un trou d'axe.According to the second embodiment, the manufacturing method 1 ends with the
Une telle piĆØce de micromĆ©canique pourrait, par exemple, ĆŖtre une roue d'Ć©chappement ou une ancre d'Ć©chappement ou mĆŖme un pignon comportant une prĆ©cision gĆ©omĆ©trique de l'ordre du micromĆØtre.Such a micromechanical part could, for example, be an escape wheel or an escapement anchor or even a pinion having a geometric precision of the order of a micrometer.
Selon une alternative Ć ce deuxiĆØme mode de rĆ©alisation illustrĆ© par un trait double Ć la
PrĆ©fĆ©rentiellement, la piĆØce 27' ajoutĆ©e forme au moins un Ć©videment 28' de section plus grande que les parties retirĆ©es 25', par exemple, Ć l'aide d'un procĆ©dĆ© de photolithographie d'une rĆ©sine photosensible. Cependant, la piĆØce 27' pourrait Ć©galement comporter un matĆ©riau Ć base de silicium isolant prĆ©alablement gravĆ© puis ĆŖtre solidarisĆ©e sur la couche conductrice 21'.Preferably, the added piece 27 'forms at least one recess 28' of larger section than the removed portions 25 ', for example, using a photolithography process of a photoresist. However, Exhibit 27 'could also include a insulating silicon material previously etched and then secured to the conductive layer 21 '.
Par consĆ©quent, selon l'alternative du deuxiĆØme mode de rĆ©alisation, Ć la suite de l'Ć©tape 20, le procĆ©dĆ© de fabrication 3 du moule 39' est terminĆ© et le procĆ©dĆ© de fabrication 1 de la piĆØce de micromĆ©canique se poursuit par les Ć©tapes de galvanoplastie 5 et de libĆ©ration 7 de la piĆØce 41' du moule 39'.Therefore, according to the alternative of the second embodiment, following
L'Ć©tape 5 de galvanoplastie est rĆ©alisĆ©e en connectant l'Ć©lectrode de dĆ©pĆ“t Ć la couche infĆ©rieure 23' du moule 39' afin de faire croĆ®tre dans un premier temps un dĆ©pĆ“t Ć©lectrolytique dans la cavitĆ© 25' dudit moule puis, seulement dans un deuxiĆØme temps, dans l'Ć©videment 28' comme illustrĆ© Ć la
En effet, avantageusement selon l'invention, lorsque le dĆ©pĆ“t Ć©lectrolytique affleure de la partie supĆ©rieure de la cavitĆ© 25', il connecte Ć©lectriquement la couche supĆ©rieure 21' par, Ć©ventuellement, sa couche d'accrochage, ce qui permet la continuation de la croissance du dĆ©pĆ“t sur l'ensemble de l'Ć©videment 28'. Avantageusement, l'invention permet la rĆ©alisation de piĆØces 41' Ć grand Ć©lancement, c'est-Ć -dire quand la section de la cavitĆ© 25' est beaucoup plus petite que celle de l'Ć©videment 28', en Ć©vitant les problĆØmes de dĆ©collement mĆŖme avec un matĆ©riau en nickel - phosphore Ć , par exemple, 12% de phosphore.Indeed, advantageously according to the invention, when the electrolytic deposit is flush with the upper part of the cavity 25 ', it electrically connects the top layer 21' with, optionally, its attachment layer, which allows the continuation of the growth. depositing on the entire recess 28 '. Advantageously, the invention allows the production of parts 41 'with great slenderness, that is to say when the section of the cavity 25' is much smaller than that of the recess 28 ', avoiding the problems of delamination even with a nickel-phosphorus material at, for example, 12% phosphorus.
En effet, grĆ¢ce Ć l'utilisation du silicium comme couches conductrices 21', 23', et Ć©ventuellement leur couche d'accrochage les phĆ©nomĆØnes de dĆ©lamination aux interfaces sont diminuĆ©s ce qui Ć©vite les dĆ©collements induits par les contraintes internes du matĆ©riau Ć©lectrodĆ©posĆ©.Indeed, thanks to the use of silicon as
Selon l'alternative du deuxiĆØme mode de rĆ©alisation, le procĆ©dĆ© de fabrication 1 se termine par l'Ć©tape 7 similaire Ć celle expliquĆ©e dans le premier mode de rĆ©alisation, dans laquelle la piĆØce 41' formĆ©e dans le moule 39' est libĆ©rĆ©e. On comprend comme illustrĆ© Ć la
Selon une variante (illustrĆ©e en traits doubles discontinus Ć la
La variante reste identique au procĆ©dĆ© 1 dĆ©crit ci-dessus jusqu'Ć l'Ć©tape 8, 18 ou 20 suivant le mode de rĆ©alisation utilisĆ©. Dans l'exemple illustrĆ© aux
PrĆ©fĆ©rentiellement selon cette variante, la couche infĆ©rieure 23 est destinĆ©e Ć ĆŖtre gravĆ©e afin de former au moins une deuxiĆØme cavitĆ© 35 dans le moule 39". Comme visible, de maniĆØre prĆ©fĆ©rĆ©e entre la
Comme illustrĆ© par des traits double discontinus Ć la
Ainsi selon la variante, le procĆ©dĆ© 3 comporte une nouvelle Ć©tape 11, consistant Ć structurer au moins un masque 34 sur la couche conductrice infĆ©rieure 23 comme illustrĆ© Ć la
Ensuite, Ć la nouvelle Ć©tape 12, la couche 23 est gravĆ©e selon le motif 36 jusqu'Ć dĆ©couvrir le dĆ©pĆ“t 33 Ć©lectriquement conducteur. Puis le masque de protection 34 est retirĆ© lors d'une nouvelle Ć©tape 14. Ainsi, comme visible Ć la
Dans une nouvelle Ć©tape 16, un revĆŖtement 38 Ć©lectriquement isolant est dĆ©posĆ© en recouvrant l'ensemble infĆ©rieur du substrat 9" comme illustrĆ© Ć la
PrĆ©fĆ©rentiellement une nouvelle Ć©tape 18 n'est pas nĆ©cessaire si un seul niveau est ajoutĆ© au moule 39". Sinon, un gravage directionnel du revĆŖtement 38 est rĆ©alisĆ©. La nouvelle Ć©tape 18 serait destinĆ©e Ć limiter la prĆ©sence de couche isolante uniquement au niveau de chaque paroi verticale 39 formĆ©e dans la couche infĆ©rieure 23, c'est-Ć -dire les parois de ladite au moins une cavitĆ© 35. Dans notre exemple des
Lors de la nouvelle Ć©tape 18, comme expliquĆ© prĆ©cĆ©demment, une tige 37 peut ĆŖtre montĆ©e afin de former directement le trou 42" d'axe de la piĆØce de micromĆ©canique 41" lors de l'Ć©tape 5 de galvanoplastie avec les mĆŖmes avantages que citĆ©s prĆ©cĆ©demment.In the
Dans la variante du procĆ©dĆ© 1, Ć la suite de l'Ć©tape 18, le procĆ©dĆ© de fabrication 3 du moule 39" est terminĆ© et le procĆ©dĆ© de fabrication 1 de la piĆØce de micromĆ©canique se poursuit par les Ć©tapes de galvanoplastie 5 et de libĆ©ration 7 de la piĆØce 41" du moule 39". PrĆ©fĆ©rentiellement, si les tiges 29 et 37 sont formĆ©es respectivement dans les cavitĆ©s 25 et 35, elles sont alignĆ©es. PrĆ©fĆ©rentiellement, la tige 37 est obtenue, par exemple, Ć l'aide d'un procĆ©dĆ© de photolithographie d'une rĆ©sine photosensible.In the variant of method 1, following
A la suite des nouvelles Ć©tapes 8, 18 ou 20, l'Ć©tape 5 de galvanoplastie est rĆ©alisĆ©e en connectant l'Ć©lectrode de dĆ©pĆ“t Ć la couche infĆ©rieure 23 afin de faire croĆ®tre un dĆ©pĆ“t Ć©lectrolytique dans la cavitĆ© 35 mais Ć©galement continuer la croissance du dĆ©pĆ“t dans la cavitĆ© 25, puis, seulement dans un deuxiĆØme temps, dans l'Ć©videment 28 comme illustrĆ© Ć la
Selon cette variante, on comprend comme illustrĆ© Ć la
Une telle piĆØce de micromĆ©canique pourrait, par exemple, ĆŖtre une roue d'Ć©chappement coaxiale 43", 45" avec son pignon 47" ou un mobile Ć trois niveaux de dentures 43", 45", 47" comportant une prĆ©cision gĆ©omĆ©trique de l'ordre du micromĆØtre mais Ć©galement un rĆ©fĆ©rencement idĆ©al c'est-Ć -dire un positionnement parfait entre lesdits niveaux.Such a micromechanical part could, for example, be a
Bien entendu, la prĆ©sente invention ne se limite pas Ć l'exemple illustrĆ© mais est susceptible de diverses variantes et modifications qui apparaĆ®tront Ć l'homme de l'art. Ainsi, plusieurs moules 39, 39', 39" sont fabriquĆ©s sur le mĆŖme substrat 9, 9', 9" afin de rĆ©aliser une production en sĆ©rie de piĆØces de micromĆ©canique 41, 41', 41" qui ne sont pas forcĆ©ment identiques entre elles. De mĆŖme, on peut Ć©galement envisager changer des matĆ©riaux Ć base de silicium par de l'alumine cristallisĆ©e ou de la silice cristallisĆ©e ou carbure de silicium.Of course, the present invention is not limited to the illustrated example but is susceptible of various variations and modifications that will occur to those skilled in the art. Thus,
Claims (18)
caractĆ©risĆ© en ce qu'il comporte, Ć la suite des Ć©tapes prĆ©cĆ©dentes, les Ć©tapes suivantes :
characterized in that it comprises, following the preceding steps, the following steps:
caractĆ©risĆ© en ce que plusieurs moules (39, 39', 39") sont fabriquĆ©s sur le mĆŖme substrat (9, 9', 9").Method (3) according to one of the preceding claims,
characterized in that a plurality of molds (39, 39 ', 39 ") are manufactured on the same substrate (9, 9', 9").
caractƩrisƩ en ce que les couches conductrices (21, 21', 23, 23') sont formƩes par du silicium cristallin dopƩ.Method (3) according to one of the preceding claims,
characterized in that the conductive layers (21, 21 ', 23, 23') are formed by doped crystalline silicon.
caractƩrisƩ en ce que l'Ʃtape c) est obtenue par oxydation de la partie supƩrieure dudit substrat.Method (3) according to one of the preceding claims,
characterized in that step c) is obtained by oxidation of the upper portion of said substrate.
Priority Applications (1)
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EP20100154909 EP2230208B1 (en) | 2009-03-13 | 2010-02-26 | Electroplating mould and method for manufacturing the same |
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EP20090155125 EP2230207A1 (en) | 2009-03-13 | 2009-03-13 | Electroplating mould and method for manufacturing the same |
EP20100154909 EP2230208B1 (en) | 2009-03-13 | 2010-02-26 | Electroplating mould and method for manufacturing the same |
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EP2230208A1 true EP2230208A1 (en) | 2010-09-22 |
EP2230208B1 EP2230208B1 (en) | 2014-01-08 |
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EP20100154909 Active EP2230208B1 (en) | 2009-03-13 | 2010-02-26 | Electroplating mould and method for manufacturing the same |
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EP20090155125 Withdrawn EP2230207A1 (en) | 2009-03-13 | 2009-03-13 | Electroplating mould and method for manufacturing the same |
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US (2) | US8512539B2 (en) |
EP (2) | EP2230207A1 (en) |
JP (1) | JP5443220B2 (en) |
KR (1) | KR20100103434A (en) |
CN (1) | CN101831672B (en) |
HK (1) | HK1148561A1 (en) |
RU (1) | RU2526108C2 (en) |
TW (1) | TWI598206B (en) |
Families Citing this family (15)
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EP2230206B1 (en) * | 2009-03-13 | 2013-07-17 | Nivarox-FAR S.A. | Electroplating mould and method for manufacturing same |
EP2263971A1 (en) * | 2009-06-09 | 2010-12-22 | Nivarox-FAR S.A. | Composite micromechanical part and method for manufacturing same |
JP5773624B2 (en) | 2010-01-08 | 2015-09-02 | ćć¤ćć³ę Ŗå¼ä¼ē¤¾ | Manufacturing method of fine structure |
EP2655700A1 (en) * | 2010-12-23 | 2013-10-30 | Centre de Recherche Public - Gabriel Lippmann | An ecpr master electrode and a method for providing such ecpr master electrode |
CN102167282A (en) * | 2011-04-07 | 2011-08-31 | å¤©ę“„ęµ·éø„č”Øäøéå¢ęéå ¬åø | Method for processing microstructure of silicon and metal composite material |
KR101351221B1 (en) * | 2011-09-21 | 2014-01-14 | ķźµģ ė „ź³µģ¬ | Fabrication Method of Substrate-Supported Coating Layers by Using Tape Casting Film Sheet |
JP5073879B1 (en) * | 2011-11-15 | 2012-11-14 | ę Ŗå¼ä¼ē¤¾ļ¼¬ļ½ ļ½ļ½ | Multistage transfer mold manufacturing method, multistage transfer mold, and parts thereby |
EP2767869A1 (en) * | 2013-02-13 | 2014-08-20 | Nivarox-FAR S.A. | Method for manufacturing a one-piece micromechanical part comprising at least two separate levels |
CH708827A2 (en) * | 2013-11-08 | 2015-05-15 | Nivarox Sa | micromechanical part hollow, several functional levels and a one-piece based on a synthetic allotrope of carbon material. |
CN105402363B (en) * | 2014-09-09 | 2019-07-23 | ē²¾å·„ēµåęéå ¬åø | The manufacturing method of mechanical part, machine core, clock and watch and mechanical part |
EP3109199B1 (en) * | 2015-06-25 | 2022-05-11 | Nivarox-FAR S.A. | Silicon-based part with at least one chamfer and method for manufacturing same |
CN105729683B (en) * | 2016-03-18 | 2017-12-01 | å®ę³¢åęęØ”å ·ęéå ¬åø | A kind of preparation method in the accurate emulation dermato glyphic pattern face of molding mold cavity |
EP3467151B1 (en) * | 2017-10-06 | 2020-06-17 | Nivarox-FAR S.A. | Electroplating mould and method for manufacturing same |
JP7317637B2 (en) * | 2019-08-30 | 2023-07-31 | ć·ććŗć³ćć”ć¤ć³ććć¤ć¹ę Ŗå¼ä¼ē¤¾ | Electroforming mold manufacturing method |
EP3839624B1 (en) * | 2019-12-18 | 2023-09-13 | Nivarox-FAR S.A. | Method for manufacturing a timepiece component |
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- 2010-03-12 US US12/723,191 patent/US8512539B2/en active Active
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Also Published As
Publication number | Publication date |
---|---|
JP5443220B2 (en) | 2014-03-19 |
TW201100224A (en) | 2011-01-01 |
RU2526108C2 (en) | 2014-08-20 |
EP2230208B1 (en) | 2014-01-08 |
TWI598206B (en) | 2017-09-11 |
HK1148561A1 (en) | 2011-09-09 |
RU2010109438A (en) | 2011-09-20 |
US9139925B2 (en) | 2015-09-22 |
CN101831672A (en) | 2010-09-15 |
JP2010216014A (en) | 2010-09-30 |
US8512539B2 (en) | 2013-08-20 |
US20130213800A1 (en) | 2013-08-22 |
CN101831672B (en) | 2013-01-16 |
US20100236934A1 (en) | 2010-09-23 |
EP2230207A1 (en) | 2010-09-22 |
KR20100103434A (en) | 2010-09-27 |
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