EP2219225A4 - Oxide semiconductor material, method for manufacturing oxide semiconductor material, electronic device and field effect transistor - Google Patents

Oxide semiconductor material, method for manufacturing oxide semiconductor material, electronic device and field effect transistor

Info

Publication number
EP2219225A4
EP2219225A4 EP08850158A EP08850158A EP2219225A4 EP 2219225 A4 EP2219225 A4 EP 2219225A4 EP 08850158 A EP08850158 A EP 08850158A EP 08850158 A EP08850158 A EP 08850158A EP 2219225 A4 EP2219225 A4 EP 2219225A4
Authority
EP
European Patent Office
Prior art keywords
oxide semiconductor
semiconductor material
electronic device
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP08850158A
Other languages
German (de)
French (fr)
Other versions
EP2219225A1 (en
EP2219225B1 (en
Inventor
Akira Hasegawa
Kenji Kohiro
Noboru Fukuhara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Chemical Co Ltd
Original Assignee
Sumitomo Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co Ltd filed Critical Sumitomo Chemical Co Ltd
Publication of EP2219225A1 publication Critical patent/EP2219225A1/en
Publication of EP2219225A4 publication Critical patent/EP2219225A4/en
Application granted granted Critical
Publication of EP2219225B1 publication Critical patent/EP2219225B1/en
Not-in-force legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
EP08850158A 2007-11-15 2008-11-12 Oxide semiconductor material, method for manufacturing oxide semiconductor material, electronic device and field effect transistor Not-in-force EP2219225B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007296984A JP2009123957A (en) 2007-11-15 2007-11-15 Oxide semiconductor material and manufacturing method therefor, electronic device, and field-effect transistor
PCT/JP2008/070963 WO2009064007A1 (en) 2007-11-15 2008-11-12 Oxide semiconductor material, method for manufacturing oxide semiconductor material, electronic device and field effect transistor

Publications (3)

Publication Number Publication Date
EP2219225A1 EP2219225A1 (en) 2010-08-18
EP2219225A4 true EP2219225A4 (en) 2011-01-05
EP2219225B1 EP2219225B1 (en) 2012-06-20

Family

ID=40638852

Family Applications (1)

Application Number Title Priority Date Filing Date
EP08850158A Not-in-force EP2219225B1 (en) 2007-11-15 2008-11-12 Oxide semiconductor material, method for manufacturing oxide semiconductor material, electronic device and field effect transistor

Country Status (6)

Country Link
US (1) US20110001136A1 (en)
EP (1) EP2219225B1 (en)
JP (1) JP2009123957A (en)
CN (1) CN101868857A (en)
TW (1) TW200939470A (en)
WO (1) WO2009064007A1 (en)

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JP5213458B2 (en) * 2008-01-08 2013-06-19 キヤノン株式会社 Amorphous oxide and field effect transistor
JP5724157B2 (en) * 2009-04-13 2015-05-27 日立金属株式会社 Oxide semiconductor target and method of manufacturing oxide semiconductor device using the same
KR102329380B1 (en) 2009-10-09 2021-11-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101820973B1 (en) * 2009-10-09 2018-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the semiconductor device
CN104733540B (en) 2009-10-09 2019-11-12 株式会社半导体能源研究所 Semiconductor devices
KR101717460B1 (en) * 2009-10-16 2017-03-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device and electronic device including the liquid crystal display device
KR101876470B1 (en) 2009-11-06 2018-07-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011074407A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011108382A1 (en) * 2010-03-05 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2012124446A (en) 2010-04-07 2012-06-28 Kobe Steel Ltd Oxide for semiconductor layer of thin film transistor and sputtering target, and thin film transistor
JP2012033854A (en) * 2010-04-20 2012-02-16 Kobe Steel Ltd Oxide for semiconductor layer of thin film transistor, sputtering target, and thin film transistor
KR20110124530A (en) * 2010-05-11 2011-11-17 삼성전자주식회사 Oxide semiconductor, thin film transistor including the same and thin film transistor display panel including the same
KR102479939B1 (en) * 2010-07-02 2022-12-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
JP5718072B2 (en) 2010-07-30 2015-05-13 三星ディスプレイ株式會社Ｓａｍｓｕｎｇ Ｄｉｓｐｌａｙ Ｃｏ．，Ｌｔｄ． Thin film transistor oxide for semiconductor layer and sputtering target, and thin film transistor
JP5540972B2 (en) * 2010-07-30 2014-07-02 日立金属株式会社 Oxide semiconductor target and oxide semiconductor film manufacturing method
JP5592952B2 (en) * 2010-07-30 2014-09-17 株式会社日立製作所 Oxide semiconductor device
TWI627756B (en) 2011-03-25 2018-06-21 半導體能源研究所股份有限公司 Field-effect transistor, and memory and semiconductor circuit including the same
JP5881681B2 (en) * 2011-04-12 2016-03-09 三井金属鉱業株式会社 Oxide-type semiconductor material and sputtering target
KR101891650B1 (en) * 2011-09-22 2018-08-27 삼성디스플레이 주식회사 OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR INCLUDING THE SAME AND THIN FILM TRANSISTOR array PANEL INCLUDING THE SAME
KR20130049620A (en) 2011-11-04 2013-05-14 삼성디스플레이 주식회사 Display device
JP5996227B2 (en) * 2012-03-26 2016-09-21 学校法人 龍谷大学 Oxide film and manufacturing method thereof
US9553201B2 (en) 2012-04-02 2017-01-24 Samsung Display Co., Ltd. Thin film transistor, thin film transistor array panel, and manufacturing method of thin film transistor
KR20130111874A (en) 2012-04-02 2013-10-11 삼성디스플레이 주식회사 Thin film transistor, thin film transistor array panel and display device including the same, and manufacturing method of thin film transistor
KR20130129674A (en) 2012-05-21 2013-11-29 삼성디스플레이 주식회사 Thin film transistor and thin film transistor array panel including the same
JP5983163B2 (en) * 2012-08-07 2016-08-31 日立金属株式会社 Oxide semiconductor target, oxide semiconductor material, and semiconductor device manufacturing method using the same
JP6080141B2 (en) * 2012-09-18 2017-02-15 エルジー・ケム・リミテッド Transparent conductive film, method for manufacturing transparent conductive film, electronic device, and thin film transistor
KR101445478B1 (en) 2012-10-15 2014-09-30 청주대학교 산학협력단 Thin Film Transistor Using Si-Zn-SnO
EP2738815B1 (en) * 2012-11-30 2016-02-10 Samsung Electronics Co., Ltd Semiconductor materials, transistors including the same, and electronic devices including transistors
JP6233233B2 (en) * 2013-08-06 2017-11-22 三菱マテリアル株式会社 Sputtering target and manufacturing method thereof
CN104004990B (en) * 2014-06-03 2016-08-24 上海理工大学 The method of preparation amorphous state transparent zinc oxide thin film
JP6041219B2 (en) 2014-08-27 2016-12-07 日立金属株式会社 Sputtering target
CN105655354A (en) * 2016-01-22 2016-06-08 京东方科技集团股份有限公司 Thin film transistor, array substrate and preparation method thereof and display device
JP7130209B2 (en) * 2016-03-02 2022-09-05 国立大学法人東京工業大学 Oxide semiconductor compound layer, semiconductor device comprising oxide semiconductor compound layer, and laminate
JP2017179595A (en) * 2016-03-28 2017-10-05 日立金属株式会社 Sputtering target material, and its production method
JP6557750B1 (en) * 2018-03-16 2019-08-07 株式会社コベルコ科研 Sputtering target material and sputtering target
JP7373763B2 (en) 2019-02-14 2023-11-06 パナソニックＩｐマネジメント株式会社 ScAlMgO4 single crystal substrate and its manufacturing method

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WO2007058232A1 (en) * 2005-11-18 2007-05-24 Idemitsu Kosan Co., Ltd. Semiconductor thin film and method for manufacturing same, and thin film transistor

Also Published As

Publication number Publication date
CN101868857A (en) 2010-10-20
EP2219225A1 (en) 2010-08-18
WO2009064007A1 (en) 2009-05-22
TW200939470A (en) 2009-09-16
JP2009123957A (en) 2009-06-04
US20110001136A1 (en) 2011-01-06
EP2219225B1 (en) 2012-06-20

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