EP2219225A4 - Oxide semiconductor material, method for manufacturing oxide semiconductor material, electronic device and field effect transistor - Google Patents
Oxide semiconductor material, method for manufacturing oxide semiconductor material, electronic device and field effect transistorInfo
- Publication number
- EP2219225A4 EP2219225A4 EP08850158A EP08850158A EP2219225A4 EP 2219225 A4 EP2219225 A4 EP 2219225A4 EP 08850158 A EP08850158 A EP 08850158A EP 08850158 A EP08850158 A EP 08850158A EP 2219225 A4 EP2219225 A4 EP 2219225A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- oxide semiconductor
- semiconductor material
- electronic device
- field effect
- effect transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title 2
- 239000004065 semiconductor Substances 0.000 title 2
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02581—Transition metal or rare earth elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Ceramic Engineering (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Thin Film Transistor (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007296984A JP2009123957A (en) | 2007-11-15 | 2007-11-15 | Oxide semiconductor material and manufacturing method therefor, electronic device, and field-effect transistor |
PCT/JP2008/070963 WO2009064007A1 (en) | 2007-11-15 | 2008-11-12 | Oxide semiconductor material, method for manufacturing oxide semiconductor material, electronic device and field effect transistor |
Publications (3)
Publication Number | Publication Date |
---|---|
EP2219225A1 EP2219225A1 (en) | 2010-08-18 |
EP2219225A4 true EP2219225A4 (en) | 2011-01-05 |
EP2219225B1 EP2219225B1 (en) | 2012-06-20 |
Family
ID=40638852
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP08850158A Not-in-force EP2219225B1 (en) | 2007-11-15 | 2008-11-12 | Oxide semiconductor material, method for manufacturing oxide semiconductor material, electronic device and field effect transistor |
Country Status (6)
Country | Link |
---|---|
US (1) | US20110001136A1 (en) |
EP (1) | EP2219225B1 (en) |
JP (1) | JP2009123957A (en) |
CN (1) | CN101868857A (en) |
TW (1) | TW200939470A (en) |
WO (1) | WO2009064007A1 (en) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5213458B2 (en) * | 2008-01-08 | 2013-06-19 | キヤノン株式会社 | Amorphous oxide and field effect transistor |
JP5724157B2 (en) * | 2009-04-13 | 2015-05-27 | 日立金属株式会社 | Oxide semiconductor target and method of manufacturing oxide semiconductor device using the same |
KR102329380B1 (en) | 2009-10-09 | 2021-11-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device |
KR101820973B1 (en) * | 2009-10-09 | 2018-01-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device and method for manufacturing the semiconductor device |
CN104733540B (en) | 2009-10-09 | 2019-11-12 | 株式会社半导体能源研究所 | Semiconductor devices |
KR101717460B1 (en) * | 2009-10-16 | 2017-03-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Liquid crystal display device and electronic device including the liquid crystal display device |
KR101876470B1 (en) | 2009-11-06 | 2018-07-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device |
WO2011074407A1 (en) | 2009-12-18 | 2011-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
WO2011108382A1 (en) * | 2010-03-05 | 2011-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
JP2012124446A (en) | 2010-04-07 | 2012-06-28 | Kobe Steel Ltd | Oxide for semiconductor layer of thin film transistor and sputtering target, and thin film transistor |
JP2012033854A (en) * | 2010-04-20 | 2012-02-16 | Kobe Steel Ltd | Oxide for semiconductor layer of thin film transistor, sputtering target, and thin film transistor |
KR20110124530A (en) * | 2010-05-11 | 2011-11-17 | 삼성전자주식회사 | Oxide semiconductor, thin film transistor including the same and thin film transistor display panel including the same |
KR102479939B1 (en) * | 2010-07-02 | 2022-12-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device and manufacturing method thereof |
JP5718072B2 (en) | 2010-07-30 | 2015-05-13 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | Thin film transistor oxide for semiconductor layer and sputtering target, and thin film transistor |
JP5540972B2 (en) * | 2010-07-30 | 2014-07-02 | 日立金属株式会社 | Oxide semiconductor target and oxide semiconductor film manufacturing method |
JP5592952B2 (en) * | 2010-07-30 | 2014-09-17 | 株式会社日立製作所 | Oxide semiconductor device |
TWI627756B (en) | 2011-03-25 | 2018-06-21 | 半導體能源研究所股份有限公司 | Field-effect transistor, and memory and semiconductor circuit including the same |
JP5881681B2 (en) * | 2011-04-12 | 2016-03-09 | 三井金属鉱業株式会社 | Oxide-type semiconductor material and sputtering target |
KR101891650B1 (en) * | 2011-09-22 | 2018-08-27 | 삼성디스플레이 주식회사 | OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR INCLUDING THE SAME AND THIN FILM TRANSISTOR array PANEL INCLUDING THE SAME |
KR20130049620A (en) | 2011-11-04 | 2013-05-14 | 삼성디스플레이 주식회사 | Display device |
JP5996227B2 (en) * | 2012-03-26 | 2016-09-21 | 学校法人 龍谷大学 | Oxide film and manufacturing method thereof |
US9553201B2 (en) | 2012-04-02 | 2017-01-24 | Samsung Display Co., Ltd. | Thin film transistor, thin film transistor array panel, and manufacturing method of thin film transistor |
KR20130111874A (en) | 2012-04-02 | 2013-10-11 | 삼성디스플레이 주식회사 | Thin film transistor, thin film transistor array panel and display device including the same, and manufacturing method of thin film transistor |
KR20130129674A (en) | 2012-05-21 | 2013-11-29 | 삼성디스플레이 주식회사 | Thin film transistor and thin film transistor array panel including the same |
JP5983163B2 (en) * | 2012-08-07 | 2016-08-31 | 日立金属株式会社 | Oxide semiconductor target, oxide semiconductor material, and semiconductor device manufacturing method using the same |
JP6080141B2 (en) * | 2012-09-18 | 2017-02-15 | エルジー・ケム・リミテッド | Transparent conductive film, method for manufacturing transparent conductive film, electronic device, and thin film transistor |
KR101445478B1 (en) | 2012-10-15 | 2014-09-30 | 청주대학교 산학협력단 | Thin Film Transistor Using Si-Zn-SnO |
EP2738815B1 (en) * | 2012-11-30 | 2016-02-10 | Samsung Electronics Co., Ltd | Semiconductor materials, transistors including the same, and electronic devices including transistors |
JP6233233B2 (en) * | 2013-08-06 | 2017-11-22 | 三菱マテリアル株式会社 | Sputtering target and manufacturing method thereof |
CN104004990B (en) * | 2014-06-03 | 2016-08-24 | 上海理工大学 | The method of preparation amorphous state transparent zinc oxide thin film |
JP6041219B2 (en) | 2014-08-27 | 2016-12-07 | 日立金属株式会社 | Sputtering target |
CN105655354A (en) * | 2016-01-22 | 2016-06-08 | 京东方科技集团股份有限公司 | Thin film transistor, array substrate and preparation method thereof and display device |
JP7130209B2 (en) * | 2016-03-02 | 2022-09-05 | 国立大学法人東京工業大学 | Oxide semiconductor compound layer, semiconductor device comprising oxide semiconductor compound layer, and laminate |
JP2017179595A (en) * | 2016-03-28 | 2017-10-05 | 日立金属株式会社 | Sputtering target material, and its production method |
JP6557750B1 (en) * | 2018-03-16 | 2019-08-07 | 株式会社コベルコ科研 | Sputtering target material and sputtering target |
JP7373763B2 (en) | 2019-02-14 | 2023-11-06 | パナソニックIpマネジメント株式会社 | ScAlMgO4 single crystal substrate and its manufacturing method |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050017244A1 (en) * | 2003-07-25 | 2005-01-27 | Randy Hoffman | Semiconductor device |
US20050199880A1 (en) * | 2004-03-12 | 2005-09-15 | Hoffman Randy L. | Semiconductor device |
WO2007058232A1 (en) * | 2005-11-18 | 2007-05-24 | Idemitsu Kosan Co., Ltd. | Semiconductor thin film and method for manufacturing same, and thin film transistor |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
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US5606184A (en) * | 1995-05-04 | 1997-02-25 | Motorola, Inc. | Heterostructure field effect device having refractory ohmic contact directly on channel layer and method for making |
JP4170454B2 (en) | 1998-07-24 | 2008-10-22 | Hoya株式会社 | Article having transparent conductive oxide thin film and method for producing the same |
JP2000258375A (en) * | 1999-03-09 | 2000-09-22 | Ngk Spark Plug Co Ltd | Gas sensor |
JP2003298062A (en) | 2002-03-29 | 2003-10-17 | Sharp Corp | Thin film transistor and its manufacturing method |
JP2005003806A (en) * | 2003-06-10 | 2005-01-06 | Sun Tec Kk | Optical element, tunable optical filter, and optical add / drop module |
JP5053537B2 (en) | 2004-11-10 | 2012-10-17 | キヤノン株式会社 | Semiconductor device using amorphous oxide |
US7453065B2 (en) * | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
JP2007250369A (en) * | 2006-03-16 | 2007-09-27 | Sumitomo Chemical Co Ltd | Transparent conductive film and its manufacturing method |
US7663165B2 (en) * | 2006-08-31 | 2010-02-16 | Aptina Imaging Corporation | Transparent-channel thin-film transistor-based pixels for high-performance image sensors |
JP4332545B2 (en) * | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | Field effect transistor and manufacturing method thereof |
JP5125162B2 (en) * | 2007-03-16 | 2013-01-23 | 住友化学株式会社 | Transparent conductive material |
KR101415561B1 (en) * | 2007-06-14 | 2014-08-07 | 삼성디스플레이 주식회사 | Thin film transistor array panel and manufacturing method thereof |
-
2007
- 2007-11-15 JP JP2007296984A patent/JP2009123957A/en active Pending
-
2008
- 2008-11-12 CN CN200880116357A patent/CN101868857A/en active Pending
- 2008-11-12 US US12/743,081 patent/US20110001136A1/en not_active Abandoned
- 2008-11-12 WO PCT/JP2008/070963 patent/WO2009064007A1/en active Application Filing
- 2008-11-12 EP EP08850158A patent/EP2219225B1/en not_active Not-in-force
- 2008-11-13 TW TW097143797A patent/TW200939470A/en unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050017244A1 (en) * | 2003-07-25 | 2005-01-27 | Randy Hoffman | Semiconductor device |
US20050199880A1 (en) * | 2004-03-12 | 2005-09-15 | Hoffman Randy L. | Semiconductor device |
WO2007058232A1 (en) * | 2005-11-18 | 2007-05-24 | Idemitsu Kosan Co., Ltd. | Semiconductor thin film and method for manufacturing same, and thin film transistor |
Also Published As
Publication number | Publication date |
---|---|
CN101868857A (en) | 2010-10-20 |
EP2219225A1 (en) | 2010-08-18 |
WO2009064007A1 (en) | 2009-05-22 |
TW200939470A (en) | 2009-09-16 |
JP2009123957A (en) | 2009-06-04 |
US20110001136A1 (en) | 2011-01-06 |
EP2219225B1 (en) | 2012-06-20 |
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