EP2187432A1 - P-type field-effect transistor and method of production - Google Patents
P-type field-effect transistor and method of production Download PDFInfo
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- EP2187432A1 EP2187432A1 EP08169044A EP08169044A EP2187432A1 EP 2187432 A1 EP2187432 A1 EP 2187432A1 EP 08169044 A EP08169044 A EP 08169044A EP 08169044 A EP08169044 A EP 08169044A EP 2187432 A1 EP2187432 A1 EP 2187432A1
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- 230000005669 field effect Effects 0.000 title claims description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 238000000034 method Methods 0.000 title claims description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 9
- 239000000463 material Substances 0.000 abstract description 6
- 239000002184 metal Substances 0.000 description 6
- 230000010354 integration Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000035899 viability Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1087—Substrate region of field-effect devices of field-effect transistors with insulated gate characterised by the contact structure of the substrate region, e.g. for controlling or preventing bipolar effect
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66522—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with an active layer made of a group 13/15 material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
- H01L29/66621—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation using etching to form a recess at the gate location
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
Definitions
- GaAs semiconductor technology provides transistor devices of the npn bipolar transistor and n-FET types. Circuit design and system functionality require p-type devices, especially pnp bipolar transistors or p-channel field-effect transistors, which are not provided in the GaAs technology up to now. With only n-type devices available in GaAs technology, other circuit concepts are applied at the expense of increased current consumption, larger occupied area and other shortcomings. Semiconductor circuits in silicon comprise both n-type and p-type devices, but this is not the preferred technology for power amplifiers, especially in industrial applications. Although the lacking p-type transistor components can be provided on external circuit components, a full integration of both types of transistors is desired also in GaAs technology.
- a further object is the disclosure of an efficient production method of a p-channel field-effect transistor in GaAs technology.
- the field-effect transistor is based on a layer structure that can be used to manufacture npn bipolar transistors.
- a p-doped layer which can also serve as base layer of a bipolar transistor, is divided into two separate portions by a recess, in which a gate electrode is located.
- the gate electrode is on a gate dielectric layer and controls the space charge in the channel in an n-doped layer, which can also serve as collector layer of a bipolar transistor.
- the p-channel field-effect transistor can be arranged in a layer sequence that can be used in a vertical npn bipolar transistor. Furthermore, this layer sequence can be laterally confined to form a mesa on a substrate surface.
- An n + -doped layer which can also serve as subcollector layer of a bipolar transistor, can be positioned under the mesa and be provided with an external electric connection functioning as a bulk contact of the field-effect transistor.
- FIG. 1 shows a cross-section of an embodiment of the p-channel field-effect transistor.
- An n + -layer 2 is located on an upper surface of a substrate 1, which can be especially GaAs.
- a layer sequence is arranged forming a mesa, which comprises an n-layer 3, a p-layer 4 and a further n-layer 5.
- This layer sequence can be provided for npn bipolar transistors, which can be manufactured on the same substrate.
- the field-effect transistor can use the layer sequence of a standard GaAs HBT manufacturing technology.
- the upper n-layer 5, which is shown in the cross-section of FIG. 1 is not necessary for the field-effect transistor. It could therefore be left out or removed, but it can be left on the p-layer 4 as well if the layer sequence as shown in FIG. 1 is provided in the production method.
- the p-layer 4 is divided by a trench or recess into two separate portions as shown in FIG. 1 .
- the bottom and sidewalls of the recess are covered with a relatively thin gate dielectric 6.
- source/drain contact layers 7, preferably a metal may be arranged on the surface of the portions of the p-layer 4.
- the regions that are occupied by space charge regions 8 during the operation of the transistor are indicated by the hatched areas in FIG. 1 .
- a channel region 9 is provided under the gate dielectric 6 within the lower n-layer 3 between the space charge regions 8. Since the channel region 9 is located in n-doped semiconductor material, it is provided for a p-channel field-effect transistor.
- Source/drain contacts 11 are provided for source and drain and, in this embodiment, arranged on the source/drain contact layers 7.
- the source/drain contacts 11 are preferably a metal.
- the n + -layer 2 can be provided as a subcollector layer of a vertical npn transistor.
- the n + -layer 2 can be used to provide a bulk contact.
- a bulk contact layer 12 preferably a metal
- An isolating layer 14 on the level of the n + -layer 2 can be provided as a lateral insulation of the n + -layer 2, and a further dielectric layer 15 can be provided as a passivation and electric insulation between the various electric contacts on the upper side of the device.
- the arrangement and shape of the layers, especially the gate dielectric 6, the dielectric layer 15, and the contact layers, may deviate from the example of FIG. 1 and can be varied in order to optimize the performance of the field-effect transistor.
- the field-effect transistor is especially advantageous in that the source/drain regions are formed by portions of the p-layer 4, which can also serve as the base layer of a vertical npn bipolar transistor, and the channel region is located in an n-layer 3, which can also serve as a collector layer of an npn bipolar transistor.
- the source/drain regions are completely separated from one another by the recess comprising the gate electrode and the gate dielectric. Thus there is no direct connection via p-doped semiconductor material between the two portions of the p-layer 4. In this manner, a sequence of p-doped, n-doped and p-doped semiconductor layers can be used to form a field-effect transistor of essentially lateral structure.
- FIG. 2 shows the layout of the electrically conducting tracks in a schematic plan view.
- the gate electrode 10 is shown to be arranged between the source/drain contacts 11, while the bulk contact 13 is arranged laterally to the other contacts.
- every contact 10, 11, 13 is electrically conductively connected with a contact pad 16, which can be used to apply an external electric connection.
- the design of the conducting tracks and contact layers can be varied according to the requirements of each individual embodiment. Thus there is a large variety of possibilities to integrate the field-effect transistor together with other devices, especially vertical bipolar transistors.
- the field-effect transistor can be manufactured within a standard GaAs technology together with vertical bipolar transistors.
- the method of production of the field-effect transistor can comprise the steps of applying an n-layer and a p-layer above a substrate of semiconductor material, especially of GaAs, the layers being preferably structured in the shape of a mesa.
- a recess or trench is etched into the p-layer in order to form two separate portions, which are not connected by p-doped semiconductor material.
- a gate dielectric is arranged on the bottom and sidewalls of the recess.
- the gate dielectric can be silicon nitride, which can be used within a standard GaAs HBT technology.
- a gate electrode, preferably formed from metal, is arranged in the recess on the gate dielectric.
- Source/drain contacts are arranged in electric connection with the portions of the p-layer forming source and drain.
- An n + -layer can be arranged between the substrate and the mesa comprising the n-layer and the p-layer.
- the n + - layer can be provided with a bulk contact and with a bulk contact layer between the bulk contact and the n + -layer.
- the method can be used to produce also vertical bipolar transistors.
- a further n-layer is arranged on the p-layer.
- the n + -layer is used as a subcollector layer, and the lower n-layer, the p-layer and the upper n-layer are used in this sequence as collector layer, base layer and emitter layer of a vertical npn bipolar transistor.
- the layer sequence can be structured, especially by forming mesas for each individual device, and the field-effect transistor is produced by forming the recess that is intended for the gate electrode.
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
- GaAs semiconductor technology provides transistor devices of the npn bipolar transistor and n-FET types. Circuit design and system functionality require p-type devices, especially pnp bipolar transistors or p-channel field-effect transistors, which are not provided in the GaAs technology up to now. With only n-type devices available in GaAs technology, other circuit concepts are applied at the expense of increased current consumption, larger occupied area and other shortcomings. Semiconductor circuits in silicon comprise both n-type and p-type devices, but this is not the preferred technology for power amplifiers, especially in industrial applications. Although the lacking p-type transistor components can be provided on external circuit components, a full integration of both types of transistors is desired also in GaAs technology.
- Merged or stacked FET-HBT integration schemes, often called BiFET or BiHEMT and containing both HBT and FET or P-HEMT devices on a single GaAs substrate, are reported in the following papers from the CS MANTECH Conference 2007: William Peatman, Mohsen Shokrani, Boris Gedzberg, Wojciech Krystek, and Michael Trippe: "InGaP-Plus™: Advanced GaAs BiFET Technology and Applications";
T. Henderson, J. Middleton, J. Mahoney, S. Varma, T. Rivers, C. Jordan, and B. Avrit: "High-Performance BiHEMT HBT / E-D pHEMT Integration";
Todd D. Basso and Richard B. Brown: "A Complementary GaAs Microprocessor for Space Applications";
Ravi Ramanathan, Mike Sun, Peter J. Zampardi, Andre G. Metzger, Vincent Ho, Cejun Wei, Peter Tran, Hongxiao Shao, Nick Cheng, Cristian Cismaru, Jiang Li, Shiaw Chang, Phil Thompson, Mark Kuhlman, Kenneth Weller: "Commercial Viability of a Merged HBT-FET (BiFET) Technology for GaAs Power Amplifiers"; C. K. Lin, T. C. Tsai, S. L. Yu, C. C. Chang, Y. T. Cho, J. C. Yuan, C. P. Ho, T. Y. Chou, J. H. Huang, M. C. Tu, and Y. C. Wang: "Monolithic Integration of E/D-mode pHEMT and InGaP HBT Technology on 150-mm GaAs Wafers"; - It is an object of this invention to provide a p-channel field-effect transistor in GaAs technology. A further object is the disclosure of an efficient production method of a p-channel field-effect transistor in GaAs technology.
- These and other objects are achieved by the p-type field-effect transistor according to claim 1 and the method of production according to claim 6, respectively.
- The field-effect transistor is based on a layer structure that can be used to manufacture npn bipolar transistors. A p-doped layer, which can also serve as base layer of a bipolar transistor, is divided into two separate portions by a recess, in which a gate electrode is located. The gate electrode is on a gate dielectric layer and controls the space charge in the channel in an n-doped layer, which can also serve as collector layer of a bipolar transistor. Thus, the p-channel field-effect transistor can be arranged in a layer sequence that can be used in a vertical npn bipolar transistor. Furthermore, this layer sequence can be laterally confined to form a mesa on a substrate surface. An n+-doped layer, which can also serve as subcollector layer of a bipolar transistor, can be positioned under the mesa and be provided with an external electric connection functioning as a bulk contact of the field-effect transistor.
- Examples of the field-effect transistor and the production method are described in more detail in conjunction with the appended figures.
- FIG. 1
- shows a cross-section of an embodiment of the p- FET.
- FIG. 2
- shows a schematic plan view of the electric contacts and connections of the p-FET.
-
FIG. 1 shows a cross-section of an embodiment of the p-channel field-effect transistor. An n+-layer 2 is located on an upper surface of a substrate 1, which can be especially GaAs. On the n+-layer 2, a layer sequence is arranged forming a mesa, which comprises an n-layer 3, a p-layer 4 and a further n-layer 5. This layer sequence can be provided for npn bipolar transistors, which can be manufactured on the same substrate. Thus, the field-effect transistor can use the layer sequence of a standard GaAs HBT manufacturing technology. The upper n-layer 5, which is shown in the cross-section ofFIG. 1 , is not necessary for the field-effect transistor. It could therefore be left out or removed, but it can be left on the p-layer 4 as well if the layer sequence as shown inFIG. 1 is provided in the production method. - The p-layer 4 is divided by a trench or recess into two separate portions as shown in
FIG. 1 . The bottom and sidewalls of the recess are covered with a relatively thin gate dielectric 6. Optionally, source/drain contact layers 7, preferably a metal, may be arranged on the surface of the portions of the p-layer 4. The regions that are occupied byspace charge regions 8 during the operation of the transistor are indicated by the hatched areas inFIG. 1 . A channel region 9 is provided under the gate dielectric 6 within the lower n-layer 3 between thespace charge regions 8. Since the channel region 9 is located in n-doped semiconductor material, it is provided for a p-channel field-effect transistor. Agate electrode 10, which can be a metal, is arranged in the recess on the gate dielectric 6. Source/drain contacts 11 are provided for source and drain and, in this embodiment, arranged on the source/drain contact layers 7. The source/drain contacts 11 are preferably a metal. - The n+-
layer 2 can be provided as a subcollector layer of a vertical npn transistor. In the field-effect transistor, the n+-layer 2 can be used to provide a bulk contact. To this purpose, abulk contact layer 12, preferably a metal, can be arranged on the upper surface of the n+-layer 2 in an area that is not covered by the n-layer 3. Abulk contact 13, which is preferably metal, is applied to thebulk contact layer 12. Anisolating layer 14 on the level of the n+-layer 2 can be provided as a lateral insulation of the n+-layer 2, and a furtherdielectric layer 15 can be provided as a passivation and electric insulation between the various electric contacts on the upper side of the device. The arrangement and shape of the layers, especially the gate dielectric 6, thedielectric layer 15, and the contact layers, may deviate from the example ofFIG. 1 and can be varied in order to optimize the performance of the field-effect transistor. - The field-effect transistor is especially advantageous in that the source/drain regions are formed by portions of the p-layer 4, which can also serve as the base layer of a vertical npn bipolar transistor, and the channel region is located in an n-
layer 3, which can also serve as a collector layer of an npn bipolar transistor. The source/drain regions are completely separated from one another by the recess comprising the gate electrode and the gate dielectric. Thus there is no direct connection via p-doped semiconductor material between the two portions of the p-layer 4. In this manner, a sequence of p-doped, n-doped and p-doped semiconductor layers can be used to form a field-effect transistor of essentially lateral structure. -
FIG. 2 shows the layout of the electrically conducting tracks in a schematic plan view. Thegate electrode 10 is shown to be arranged between the source/drain contacts 11, while thebulk contact 13 is arranged laterally to the other contacts. In this example everycontact contact pad 16, which can be used to apply an external electric connection. But the design of the conducting tracks and contact layers can be varied according to the requirements of each individual embodiment. Thus there is a large variety of possibilities to integrate the field-effect transistor together with other devices, especially vertical bipolar transistors. - The field-effect transistor can be manufactured within a standard GaAs technology together with vertical bipolar transistors. The method of production of the field-effect transistor can comprise the steps of applying an n-layer and a p-layer above a substrate of semiconductor material, especially of GaAs, the layers being preferably structured in the shape of a mesa. A recess or trench is etched into the p-layer in order to form two separate portions, which are not connected by p-doped semiconductor material. A gate dielectric is arranged on the bottom and sidewalls of the recess. The gate dielectric can be silicon nitride, which can be used within a standard GaAs HBT technology. A gate electrode, preferably formed from metal, is arranged in the recess on the gate dielectric. Source/drain contacts are arranged in electric connection with the portions of the p-layer forming source and drain. An n+-layer can be arranged between the substrate and the mesa comprising the n-layer and the p-layer. The n+- layer can be provided with a bulk contact and with a bulk contact layer between the bulk contact and the n+-layer.
- The method can be used to produce also vertical bipolar transistors. To this end, a further n-layer is arranged on the p-layer. The n+-layer is used as a subcollector layer, and the lower n-layer, the p-layer and the upper n-layer are used in this sequence as collector layer, base layer and emitter layer of a vertical npn bipolar transistor. The layer sequence can be structured, especially by forming mesas for each individual device, and the field-effect transistor is produced by forming the recess that is intended for the gate electrode.
- Thus only a slight modification of the standard production process of vertical bipolar transistors in GaAs technology enables the production of p-channel field-effect transistors in this semiconductor material. The production method is therefore compatible with standard GaAs HBT technology, does not require essential variations of the process steps and masks and is therefore highly cost-effective. An optimization of the electric properties of the field-effect transistor is easily achieved by an adaptation of the dimensions of the gate electrode, the thickness of the gate dielectric and the arrangement of the contact layers.
-
- 1
- substrate
- 2
- n+-layer
- 3
- n-layer
- 4
- p-layer
- 5
- further n-layer
- 6
- gate dielectric
- 7
- source/drain contact layer
- 8
- space charge region
- 9
- channel region
- 10
- gate electrode
- 11
- source/drain contact
- 12
- bulk contact layer
- 13
- bulk contact
- 14
- isolating layer
- 15
- dielectric layer
- 16
- contact pad
Claims (10)
- P-type field-effect transistor, comprising:- an n-layer (3) having a surface,- a p-layer (4) having two separate portions arranged on the surface of the n-layer,- a gate electrode (10) between the portions of the p-layer,- a gate dielectric (6) arranged between the gate electrode and the n-layer and between the gate electrode and each portion of the p-layer, and- source/drain contacts (11) provided for each portion of the p-layer (4) separately, each source/drain contact being electrically conductively connected to one of the portions of the p-layer.
- The field-effect transistor of claim 1, further comprising:an n+-layer (2), the n-layer (3) being arranged on the n'-layer, anda bulk contact (13) electrically conductively connected to the n+-layer.
- The field-effect transistor of claim 1 or 2, wherein the n-layer (3) and the p-layer (4) form a mesa.
- The field-effect transistor according to one of claims 1 to 3, further comprising:source/drain contact layers (7) arranged between each of the source/drain contacts (11) and the p-layer (4).
- The field-effect transistor according to one of claims 1 to 4, further comprising:a substrate (1) of GaAs, the n-layer (3) being arranged above the substrate.
- Method of production of a field-effect transistor, comprising:- forming a layer sequence comprising an n-layer (3) and a p-layer (4), the p-layer being arranged on the n-layer,- forming a recess in the p-layer in such a manner that the p-layer is divided into two separate portions,- arranging a gate dielectric (6) in the recess,- arranging a gate electrode (10) on the gate dielectric, and- applying source/drain contacts (11) to each of the portions of the p-layer.
- The method of claim 6, further comprising:forming the layer sequence above a surface of a substrate (1) of GaAs provided with an n+-layer (2), the n-layer (3) being arranged on the n+-layer (2).
- The method of claim 7, further comprising:applying a bulk contact (13) to the n+-layer (2).
- The method according to claim 7 or 8, further comprising:applying a manufacturing process of an npn HBT to produce the n+-layer (2), the n-layer (3), the p-layer (4) and a further n-layer (5) that is applied on the p-layer and to structure the layers to form the field-effect transistor and an npn bipolar transistor, in which the n+-layer is a subcollector.
- The method according to one of claims 6 to 9, further comprising:forming the gate dielectric (6) from silicon nitride.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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EP08169044A EP2187432B1 (en) | 2008-11-13 | 2008-11-13 | P-type field-effect transistor and method of production |
US13/127,318 US8598627B2 (en) | 2008-11-13 | 2009-11-12 | P-type field-effect transistor and method of production |
PCT/EP2009/065067 WO2010055102A1 (en) | 2008-11-13 | 2009-11-12 | P-type field-effect transistor and method of production |
JP2011536015A JP5588452B2 (en) | 2008-11-13 | 2009-11-12 | P-type field effect transistor and manufacturing method thereof |
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EP08169044A EP2187432B1 (en) | 2008-11-13 | 2008-11-13 | P-type field-effect transistor and method of production |
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EP2187432A1 true EP2187432A1 (en) | 2010-05-19 |
EP2187432B1 EP2187432B1 (en) | 2013-01-09 |
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US (1) | US8598627B2 (en) |
EP (1) | EP2187432B1 (en) |
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US8305069B2 (en) | 2010-03-05 | 2012-11-06 | Epcos Ag | Bandgap reference circuit and method for producing the circuit |
TWI456755B (en) * | 2011-05-11 | 2014-10-11 | Univ Nat Kaohsiung Normal | Metamorphic integrated bifets |
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WO2011066862A1 (en) | 2009-12-03 | 2011-06-09 | Epcos Ag | Bipolar transistor with lateral emitter and collector and method of production |
WO2012003871A1 (en) * | 2010-07-07 | 2012-01-12 | Epcos Ag | Voltage regulator and a method for reducing an influence of a threshold voltage variation |
US8374173B2 (en) * | 2010-11-12 | 2013-02-12 | Telefonaktiebolaget L M Ericsson (Publ) | Packet switched to circuit switched access handovers in an IMS architecture |
US11069678B2 (en) * | 2017-08-29 | 2021-07-20 | Qorvo Us, Inc. | Logic gate cell structure |
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WO2010055102A1 (en) | 2010-05-20 |
JP5588452B2 (en) | 2014-09-10 |
JP2012508973A (en) | 2012-04-12 |
EP2187432B1 (en) | 2013-01-09 |
US8598627B2 (en) | 2013-12-03 |
US20110241076A1 (en) | 2011-10-06 |
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