EP2124263A3 - Optisches Reflexionssensorelement - Google Patents
Optisches Reflexionssensorelement Download PDFInfo
- Publication number
- EP2124263A3 EP2124263A3 EP09160742A EP09160742A EP2124263A3 EP 2124263 A3 EP2124263 A3 EP 2124263A3 EP 09160742 A EP09160742 A EP 09160742A EP 09160742 A EP09160742 A EP 09160742A EP 2124263 A3 EP2124263 A3 EP 2124263A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- light source
- semiconductor light
- optical sensor
- sensor device
- type optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 5
- 238000001514 detection method Methods 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
Landscapes
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Semiconductor Lasers (AREA)
- Optical Head (AREA)
- Light Receiving Elements (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020080047166A KR101360294B1 (ko) | 2008-05-21 | 2008-05-21 | 반사형 광학 센서장치 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| EP2124263A2 EP2124263A2 (de) | 2009-11-25 |
| EP2124263A3 true EP2124263A3 (de) | 2012-11-07 |
| EP2124263B1 EP2124263B1 (de) | 2017-05-03 |
Family
ID=41056976
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP09160742.4A Not-in-force EP2124263B1 (de) | 2008-05-21 | 2009-05-20 | Optisches Reflexionssensorelement |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7982226B2 (de) |
| EP (1) | EP2124263B1 (de) |
| JP (1) | JP5175243B2 (de) |
| KR (1) | KR101360294B1 (de) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010086798A1 (en) * | 2009-01-27 | 2010-08-05 | Insiava (Pty) Limited | Microchip-based moems and waveguide device |
| WO2012155984A1 (de) * | 2011-05-19 | 2012-11-22 | Osram Opto Semiconductors Gmbh | Optoelektronische vorrichtung und verfahren zur herstellung von optoelektronischen vorrichtungen |
| US8796724B2 (en) | 2011-12-20 | 2014-08-05 | Todd W Hodrinsky | Light emitting systems and methods |
| JP6006108B2 (ja) | 2012-12-20 | 2016-10-12 | 株式会社アルファ | 光センサユニット |
| US9018645B2 (en) * | 2013-08-29 | 2015-04-28 | Stmicroelectronics Pte Ltd | Optoelectronics assembly and method of making optoelectronics assembly |
| WO2015055600A1 (en) | 2013-10-16 | 2015-04-23 | Koninklijke Philips N.V. | Compact laser device |
| US20150330897A1 (en) * | 2014-05-14 | 2015-11-19 | Semiconductor Components Industries, Llc | Image sensor and method for measuring refractive index |
| JP6380973B2 (ja) * | 2014-06-16 | 2018-08-29 | 日東電工株式会社 | 光学式センサ |
| EP3176888A1 (de) * | 2015-12-03 | 2017-06-07 | Koninklijke Philips N.V. | Sensorchip |
| JP6786798B2 (ja) * | 2015-12-22 | 2020-11-18 | 株式会社リコー | 光学センサ、光学検査装置、及び光学特性検出方法 |
| US11031751B2 (en) * | 2016-08-10 | 2021-06-08 | Hamamatsu Photonics K.K. | Light-emitting device |
| JP6747910B2 (ja) * | 2016-08-10 | 2020-08-26 | 浜松ホトニクス株式会社 | 発光装置 |
| US10734786B2 (en) | 2016-09-07 | 2020-08-04 | Hamamatsu Photonics K.K. | Semiconductor light emitting element and light emitting device including same |
| US11637409B2 (en) | 2017-03-27 | 2023-04-25 | Hamamatsu Photonics K.K. | Semiconductor light-emitting module and control method therefor |
| US11646546B2 (en) | 2017-03-27 | 2023-05-09 | Hamamatsu Photonics K.K. | Semiconductor light emitting array with phase modulation regions for generating beam projection patterns |
| JP6959042B2 (ja) | 2017-06-15 | 2021-11-02 | 浜松ホトニクス株式会社 | 発光装置 |
| US10928438B2 (en) | 2017-07-20 | 2021-02-23 | International Business Machines Corporation | Embedded photodetector as device health monitor for hot carrier injection (HCI) in power semiconductors |
| WO2019111787A1 (ja) | 2017-12-08 | 2019-06-13 | 浜松ホトニクス株式会社 | 発光装置およびその製造方法 |
| US20200035862A1 (en) * | 2018-07-26 | 2020-01-30 | Bolb Inc. | Light-emitting device with optical power readout |
| US10811400B2 (en) * | 2018-09-28 | 2020-10-20 | Apple Inc. | Wafer level optical module |
| US20210098962A1 (en) * | 2019-10-01 | 2021-04-01 | Facebook Technologies, Llc | Vertical cavity surface-emitting laser (vcsel) with a light barrier |
| EP3901612B1 (de) * | 2020-04-23 | 2024-06-12 | Sensirion AG | Integrierter partikelsensor mit hohlraum |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2425855A1 (de) * | 1974-05-28 | 1975-12-11 | Licentia Gmbh | Fotoelektrische leseeinheit zum lesen optisch abtastbarer vorlagen |
| US20010030928A1 (en) * | 2000-01-20 | 2001-10-18 | Cheong Young-Min | Optical head for near-field recording and reproduction, and method of manufacturing the same |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5440907B1 (de) * | 1969-06-02 | 1979-12-05 | ||
| JPS5967671A (ja) * | 1982-10-12 | 1984-04-17 | Nec Corp | 発光受光素子 |
| JPS59129467A (ja) * | 1983-01-14 | 1984-07-25 | Toshiba Corp | 複合光半導体素子 |
| JPS61265742A (ja) * | 1985-05-20 | 1986-11-25 | Nippon Telegr & Teleph Corp <Ntt> | 光ヘツド |
| JPH0758767B2 (ja) * | 1988-10-17 | 1995-06-21 | 沖電気工業株式会社 | 完全密着型イメージセンサ |
| JP2879971B2 (ja) * | 1990-11-30 | 1999-04-05 | 株式会社日立製作所 | 受発光複合素子 |
| JP3122710B2 (ja) * | 1995-03-10 | 2001-01-09 | オリンパス光学工業株式会社 | 面発光半導体レーザ及びこれを用いた光学式エンコーダ |
| KR100259490B1 (ko) * | 1995-04-28 | 2000-06-15 | 윤종용 | 광검출기 일체형 표면광 레이저와 이를 채용한 광픽업 장치 |
| JPH0945995A (ja) * | 1995-07-26 | 1997-02-14 | Sony Corp | 光学装置 |
| JPH0983084A (ja) * | 1995-09-19 | 1997-03-28 | Olympus Optical Co Ltd | 半導体レーザ装置 |
| US5648979A (en) * | 1995-12-29 | 1997-07-15 | Samsung Electronics Co. Ltd. | Assembly of VCSEL light source and VCSEL optical detector |
| JP3002180B1 (ja) | 1998-07-13 | 2000-01-24 | 松下電子工業株式会社 | 光半導体装置 |
| JP2002374039A (ja) * | 2001-02-27 | 2002-12-26 | Ricoh Co Ltd | 光送受信システムおよび光通信システム |
| JP2001155366A (ja) | 2000-10-04 | 2001-06-08 | Hitachi Ltd | 光ヘッドおよび光ヘッドの製造方法 |
| JP2004235190A (ja) * | 2003-01-28 | 2004-08-19 | Sony Corp | 光半導体装置 |
| JP2005064183A (ja) | 2003-08-11 | 2005-03-10 | Murata Mfg Co Ltd | 反射型センサ |
| US7489401B2 (en) * | 2004-03-01 | 2009-02-10 | National Institute Of Advanced Industrial Science And Technology | Device for detecting emission light of micro-object |
-
2008
- 2008-05-21 KR KR1020080047166A patent/KR101360294B1/ko active IP Right Grant
-
2009
- 2009-05-19 US US12/468,664 patent/US7982226B2/en not_active Expired - Fee Related
- 2009-05-20 EP EP09160742.4A patent/EP2124263B1/de not_active Not-in-force
- 2009-05-21 JP JP2009122952A patent/JP5175243B2/ja not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2425855A1 (de) * | 1974-05-28 | 1975-12-11 | Licentia Gmbh | Fotoelektrische leseeinheit zum lesen optisch abtastbarer vorlagen |
| US20010030928A1 (en) * | 2000-01-20 | 2001-10-18 | Cheong Young-Min | Optical head for near-field recording and reproduction, and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2124263B1 (de) | 2017-05-03 |
| KR101360294B1 (ko) | 2014-02-11 |
| KR20090121057A (ko) | 2009-11-25 |
| US7982226B2 (en) | 2011-07-19 |
| US20090289266A1 (en) | 2009-11-26 |
| JP2009283941A (ja) | 2009-12-03 |
| EP2124263A2 (de) | 2009-11-25 |
| JP5175243B2 (ja) | 2013-04-03 |
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| RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 31/173 20060101AFI20120928BHEP Ipc: H01L 31/0232 20060101ALI20120928BHEP Ipc: H01S 5/026 20060101ALN20120928BHEP Ipc: H01L 27/15 20060101ALI20120928BHEP |
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