EP2105960B8 - Improved adhesion to copper and copper electromigration resistance - Google Patents

Improved adhesion to copper and copper electromigration resistance Download PDF

Info

Publication number: EP2105960B8
Authority: EP; European Patent Office
Prior art keywords: copper; improved adhesion; electromigration resistance; resistance; adhesion
Prior art date: 2008-03-24
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Active

Application number

EP09155899.9A

Other languages

German (de)

French (fr)

Other versions

EP2105960A3 (en

EP2105960A2 (en

EP2105960B1 (en

Inventor

Raymond Nicholas Vrtis

Laura M. Matz

Mark Leonard O'neill

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Versum Materials US LLC

Original Assignee

Versum Materials US LLC

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2008-03-24

Filing date

2009-03-23

Publication date

2017-10-11

2009-03-23 Application filed by Versum Materials US LLC filed Critical Versum Materials US LLC

2009-09-30 Publication of EP2105960A2 publication Critical patent/EP2105960A2/en

2012-04-04 Publication of EP2105960A3 publication Critical patent/EP2105960A3/en

2017-08-02 Application granted granted Critical

2017-08-02 Publication of EP2105960B1 publication Critical patent/EP2105960B1/en

2017-10-11 Publication of EP2105960B8 publication Critical patent/EP2105960B8/en

Status Active legal-status Critical Current

2029-03-23 Anticipated expiration legal-status Critical

Links

RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title 2
229910052802 copper Inorganic materials 0.000 title 2
239000010949 copper Substances 0.000 title 2

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76849—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76883—Post-treatment or after-treatment of the conductive material
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]

EP09155899.9A 2008-03-24 2009-03-23 Improved adhesion to copper and copper electromigration resistance Active EP2105960B8 (en)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
US3887408P	2008-03-24	2008-03-24
US7484308P	2008-06-23	2008-06-23
US12/406,467 US8043976B2 (en)	2008-03-24	2009-03-18	Adhesion to copper and copper electromigration resistance

Publications (4)

Publication Number	Publication Date
EP2105960A2 EP2105960A2 (en)	2009-09-30
EP2105960A3 EP2105960A3 (en)	2012-04-04
EP2105960B1 EP2105960B1 (en)	2017-08-02
EP2105960B8 true EP2105960B8 (en)	2017-10-11

Family

ID=40793197

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
EP09155899.9A Active EP2105960B8 (en)	2008-03-24	2009-03-23	Improved adhesion to copper and copper electromigration resistance

Country Status (6)

Country	Link
US (1)	US8043976B2 (en)
EP (1)	EP2105960B8 (en)
JP (1)	JP5266116B2 (en)
KR (2)	KR101169501B1 (en)
CN (1)	CN101609810B (en)
TW (1)	TWI479567B (en)

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US9673042B2 (en)	2015-09-01	2017-06-06	Applied Materials, Inc.	Methods and apparatus for in-situ cleaning of copper surfaces and deposition and removal of self-assembled monolayers
KR102019468B1 (en) *	2016-11-29	2019-09-06	주식회사 엘지화학	Adhesive film for semiconductor device and semiconductor device
WO2018169543A1 (en) *	2017-03-17	2018-09-20	Intel Corporation	Dielectric film with pressure sensitive microcapsules of adhesion promoter
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JP7213642B2 (en) *	2018-09-05	2023-01-27	東京エレクトロン株式会社	Method for manufacturing resist film
US11769692B2 (en) *	2018-10-31	2023-09-26	Taiwan Semiconductor Manufacturing Co., Ltd.	High breakdown voltage inter-metal dielectric layer
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US20230109501A1 (en) *	2021-09-28	2023-04-06	Applied Materials, Inc.	Tungsten gapfill using molybdenum co-flow

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2009
- 2009-03-18 US US12/406,467 patent/US8043976B2/en active Active
- 2009-03-20 TW TW098109291A patent/TWI479567B/en active
- 2009-03-23 EP EP09155899.9A patent/EP2105960B8/en active Active
- 2009-03-24 KR KR1020090025008A patent/KR101169501B1/en active IP Right Grant
- 2009-03-24 JP JP2009072147A patent/JP5266116B2/en not_active Expired - Fee Related
- 2009-03-24 CN CN200910138735.XA patent/CN101609810B/en active Active
2011
- 2011-01-17 KR KR1020110004600A patent/KR20110019398A/en not_active Application Discontinuation

Also Published As

Publication number	Publication date
US8043976B2 (en)	2011-10-25
EP2105960A3 (en)	2012-04-04
KR101169501B1 (en)	2012-07-27
TWI479567B (en)	2015-04-01
JP5266116B2 (en)	2013-08-21
US20090236745A1 (en)	2009-09-24
CN101609810A (en)	2009-12-23
KR20090101859A (en)	2009-09-29
JP2009239283A (en)	2009-10-15
CN101609810B (en)	2014-06-04
TW200945440A (en)	2009-11-01
EP2105960A2 (en)	2009-09-30
KR20110019398A (en)	2011-02-25
EP2105960B1 (en)	2017-08-02

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2011-12-07	RIC1	Information provided on ipc code assigned before grant	Ipc: H01L 21/768 20060101AFI20111101BHEP Ipc: C23C 16/18 20060101ALI20111101BHEP
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