EP2092307A1 - Dispositif de détecteur semi-conducteur, instrument de diagnostic comprenant un tel dispositif et procédé de fabrication d'un tel dispositif - Google Patents

Dispositif de détecteur semi-conducteur, instrument de diagnostic comprenant un tel dispositif et procédé de fabrication d'un tel dispositif

Info

Publication number
EP2092307A1
EP2092307A1 EP07849347A EP07849347A EP2092307A1 EP 2092307 A1 EP2092307 A1 EP 2092307A1 EP 07849347 A EP07849347 A EP 07849347A EP 07849347 A EP07849347 A EP 07849347A EP 2092307 A1 EP2092307 A1 EP 2092307A1
Authority
EP
European Patent Office
Prior art keywords
semiconductor
sensor device
subregion
mesa
substance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP07849347A
Other languages
German (de)
English (en)
Inventor
Neriman N. Kahya
Erik P. A. M. Bakkers
Thomas Steffen
Lars M. Borgstrom
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Priority to EP07849347A priority Critical patent/EP2092307A1/fr
Publication of EP2092307A1 publication Critical patent/EP2092307A1/fr
Withdrawn legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4738—Diffuse reflection, e.g. also for testing fluids, fibrous materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites

Definitions

  • the invention relates to a semiconductor sensor device for sensing a substance comprising a mesa-shaped semiconductor region which is formed on a surface of a semiconductor body while a fluid comprising a substance to be sensed can flow along the mesa-shaped semiconductor region, wherein the mesa-shaped semiconductor region comprises, viewed in the longitudinal direction, subsequently a first semiconductor subregion comprising a first semiconductor material, a second semiconductor subregion comprising a second semiconductor material different from the first semiconductor material, and a third semiconductor subregion comprising a third semiconductor material different from the second semiconductor material.
  • Mesa-shaped of a region here means that the region forms a protrusion on the surface of the semiconductor body. The protruding may either be in longitudinal or a lateral direction of the body.
  • the invention also relates to a diagnostic instrument comprising such a sensor device and to a method of manufacturing such a semiconductor sensor device.
  • a diagnostic instrument comprising such a sensor device and to a method of manufacturing such a semiconductor sensor device.
  • Such a device is very suitable for detecting chemical and/or biochemical substances. In the latter case it can e.g. be used for detecting biomolecules like antigen/antibody bindings, biomolecules and others with a high sensitivity and reproducibility, and thus it can be used advantageously in protein and gene analysis, disease diagnostics and the like.
  • the mesa-shaped semiconductor region may comprise a nano-wire.
  • a nano-wire a body is intended having at least one lateral dimension between 1 and 100 nm and more in particular between 10 and 50 nm.
  • a nano-wire has dimensions in two lateral directions that are in the said ranges.
  • Its longitudinal dimension may be e.g. between 100 and 1000 nm.
  • the detection of molecules like chemical substances that are volatile or dissolved in a liquid is also possible, e.g. by introduction of the substance carrying a charge on or in a nano-wire of which the conductivity is thus changed.
  • heterojunction nano-wires are disclosed for use in a chemical sensor(see column 35 line 5).
  • the latter comprises alternating subregions of Silicon (Si) and Germanium (Ge) (see Fig. 3 and the corresponding parts of the description).
  • the latter comprises alternating layers of Galliumarsenide (GaAs) and Galliumantimonide (GaSb)(see Fig. 17 and the corresponding part of the description).
  • a disadvantage of such a device is that its sensitivity is not high enough for certain application.
  • detection of a biochemical compound, in particular a bio molecule is desired at a very low concentration of such a compound or molecule. It is desirable that the detection can be done, e.g. for detecting a disease, like an infection, at a very early stage in order to act in a prophylactic manner as much as possible. This requires a sensor device with an extremely high sensitivity.
  • a semiconductor sensor device of the type described in the opening paragraph is characterized in that the first and third semiconductor material comprise an optically passive material and the second semiconductor material comprises an optically active material, the substance to be sensed can change a property of electromagnetic radiation coming from the second subregion and the semiconductor sensor device is formed such that the electromagnetic radiation of which the property has been changed can reach a detector.
  • the present invention is based on the following recognitions. Firstly, the invention is based on the recognition that the surface of the first and third region comprising an optically inactive semiconductor material like a IV element and the surface of the second subregion comprising an optically active semiconductor material like a III-V material, have a different surface chemistry.
  • the latter includes a possible surface reconstruction and/or the involvement of oxygen atoms that may be present as a native oxide, e.g. on the surface of silicon.
  • a different surface chemistry is particularly suitable for increasing the sensitivity of a sensor device according to the invention.
  • a substance to be detected can more readily stick to the free outer surface of the III-V subregion than to the free outer surface of the IV-element subregion.
  • the sensitivity of the sensor can be increased.
  • the latter may be effected by the native outer surfaces of the subregions themselves but said surfaces can also be treated differently using said different surface chemistry in order to increase the sensitivity.
  • the surface of the IV element subregion may be treated such that its sticking capability is decreased and/or the surface of the III- V compound subregion may be treated such that its sticking capability is increased.
  • the invention is based on the recognition that the use of a second subregion comprising an optically active semiconductor material, like a III-V material, allows for an optical detection of the substance to be detected in a simple manner since a property of electro-magnetic radiation coming from said optically active second subregion will be changed if said substance is adsorbed to the surface of said second subregion. Said property may be in particular the intensity or the wavelength of said electro -magnetic radiation but a change in other properties like the polarization could be used for the purpose of detecting the substance.
  • LED Light Emitting Diode
  • the sensor device is formed such that such radiation of which a property has been changed by the substance to be detected can reach a detector.
  • Another attractive way of using a semiconductor sensor device according to the invention is to use an external radiation source, e.g. a laser or a LED of which the emitted radiation is directed towards the second subregion.
  • an external radiation source e.g. a laser or a LED of which the emitted radiation is directed towards the second subregion.
  • the sensor device should be formed such that said radiation can reach the second subregion. This can be realized if the mesa- shaped semiconductor region is freely admissible (e.g. open) at the side where the radiation source is positioned. If the semiconductor sensor device forms a closed space in which the mesa-shaped semiconductor region is locked, this can be obtained by closing the sensor device at the side where the radiation source is to be positioned by means of a radiation transparent substrate.
  • the detector of the electromagnetic radiation after its property has been changed can be positioned outside the sensor device at the side where the latter is open or provided with the transparent substrate.
  • the second subregion forms a quantum dot.
  • the first and third subregions comprise a IV element, preferably silicon or germanium or a mixed crystal of these elements, and the second subregion comprises a III-V compound.
  • the manufacturing technology is most compatible with today's advanced silicon technology while on the other hand the optical properties of the second subregion can be most easily used for sensing the substance since many III-V compounds (and II-VI compounds) have the desired properties, e.g. a direct bandgap structure.
  • the III-V compound has an effective bandgap in the visible part of the spectrum.
  • suitable materials for the second subregion may be a material having a bandgap which is just outside the visible spectrum a the IR side thereof.
  • suitable materials are GaP, GaAs or InP and more preferably materials having a lower (bulk) bandgap like InAs and mixed crystals like InGaAs or InAsP.
  • Mixed crystals offer the additional advantage that the structure of the semiconductor region can be made such that the strain induced in case of passive regions of silicon is made minimal.
  • the device comprises a mesa-shaped semiconductor region with between optically inactive other subregions a further optical active subregion with different optically properties than the second subregion such that two different substances can be detected by the sensor device.
  • a double dot device where the dots have different bandgap energies allows for multiplexed detection.
  • the two different quantum dots are present in one single mesa-shaped semiconductor region.
  • forming different quantum dots in different mesa-shaped semiconductor regions forms another attractive modification.
  • the mesa-shaped semiconductor region is connected at a first end to a first electrically conducting connection region and at a second end to a second electrically conducting connection region.
  • this allows for an internal source of radiation in the sensor device.
  • Optical properties of the radiation emitted can be changed by the substance after it has been adsorbed to a free surface of the second subregion, e.g. the wavelength or intensity of such radiation.
  • the first and third subregions comprise a group IV element of the periodic system like silicon
  • the latter may be advantageously partly or completely oxidized, to form a SiO 2 barrier. In this way the leakage of charges from the second subregion, e.g. created by the adsorption of the substance to be detected can be prevented.
  • a free outer surface of the second subregion is functionalized so as to increase the probability that the substance to be detected sticks to said free outer surface.
  • the sensitivity of the sensor can be increased.
  • Such an increase of the sensitivity can also be obtained by functionalizing a free outer surface of the first and third subregions so as to decrease the probability that the substance to be detected sticks to said free outer surface.
  • the mesa-shaped semiconductor region comprises a nano-wire and preferably the device comprises a plurality of mutually parallel nano-wires.
  • the semiconductor device according to the invention is preferably suitable for detecting a bio molecule such as a protein binding to an antibody.
  • An antibody that is specific for the protein in question can be attached to a free surface of the second subregion before the fluid containing the substance to be detected passes along said second subregion.
  • the invention further comprises a diagnostic instrument comprising a semiconductor sensor device according to the invention.
  • Such instrument may comprise further a source for electro -magnetic radiation used in detecting the substance to be detected and a detector for detecting the electro -magnetic radiation after one of its properties has been changed by the substance to be detected. Since such a source and detector can be solid-state compounds, the instrument can be relatively compact and cheap.
  • the semiconductor part may be insertably connected to the instrument such that it can be easily replaced with a new or other semiconductor sensor device e.g. after failure of the original semiconductor sensor device or in case multiplexing is desired in order to detect different substances.
  • Fig. 1 shows a cross-section perpendicular to the thickness direction of a first embodiment of a semiconductor sensor device according to the invention
  • Fig. 2 shows a perspective view of a second embodiment of a semiconductor sensor device according to the invention
  • Fig. 3 shows a perspective view of a third embodiment of a semiconductor sensor device according to the invention
  • Fig. 4 shows a perspective view of a fourth embodiment of a semiconductor sensor device according to the invention.
  • Fig. 1 shows a cross-section perpendicular to the thickness direction of a first embodiment of a semiconductor sensor device according to the invention.
  • the device 10 comprises in this example a silicon substrate 15 that is provided with a silicon dioxide layer 16.
  • a nano-wire 11 is positioned with its length direction parallel to the surface of the semiconductor body 12.
  • the nano-wire 11 comprises three sections 1,2,3 with different compositions.
  • a first section 1 comprises lowly doped p-type silicon forming, a second section 2 comprising a quantum dot region 2 comprising GaAs and a third section 3 comprising again silicon but now of the p-type conductivity.
  • These sections 2,3 are provided with (semi)conducting regions 13,14 of respectively highly p-type doped and highly n-type doped poly crystalline silicon forming the electrical connection regions of a radiation emitting diode formed within the nano-wire 11.
  • An antibody 80 coupled to a protein 30 signaling a certain disease and flowing in a blood sample 20 along the nano-wire 11 will after landing on and sticking to the GaAs region 1 induce a charge into the channel region of the radiation - emitting diode. Said charge increases a large change in the optical properties of in particular the central section 2 of the diode, which can be signaled by a detector 50.
  • Said property of the radiation E coming from the radiation-emitting subregion 2 can be e.g. the emission wavelength or the intensity.
  • Both can be signalized by a different/changing response from the detector 50.
  • the latter may be e.g. a (silicon) photodiode or a CCD image sensor.
  • the relevant radiation E is obtained by emission induced by an electrical current through the nano-wire 11.
  • an external source 40 for radiation R that is directed towards the surface of subregion 2.
  • Another way of manufacturing such a sensor device is by using (selective) epitaxial processes to form the various subregions followed by photolithography and etching to form the mesa / nanowire.
  • Fig. 2 shows a perspective view of a second embodiment of a semiconductor sensor device according to the invention.
  • the nanowire 11 is the same as in the previous example but it does not contain any doping, i.e. no intentionally doped regions.
  • a second nanowire 11' comprises in its second subregion 2', a different optical active material, e.g. InAs.
  • the device 10 can be sensitive to two different substances 30.
  • a substrate 15 which in this example comprises a quartz or glass substrate 15.
  • the nanowires 11,11 ' are sticked to the surface of the substrate 15 by an optically passive and transparent glue.
  • a detector 50 is present which in this example comprises a CCD image sensor.
  • a radiation-emitting source 40 is present to provide for radiation, which is directed towards subregions 2,2' of nanowires 11,11'.
  • the nanowires 11,11' may be formed in the same as indicated in the previous example.
  • the three components 15, 40,50 of the device 10 of this example are attached to a housing, which is not shown in the drawing.
  • the substrate 15 can be releasably attached into said housing in order to be replaced in case of failure or if a different sensor device is desired for detecting other substances.
  • Fig. 3 shows a perspective view of a third embodiment of a semiconductor sensor device according to the invention.
  • the sensor device 10 of this example comprises a plurality of nano-wires 11,11' which are grown by the above mentioned VLS epitaxy technique on an SOI substrate as the substrate used in the first example.
  • the spots for nanowires 11 ' being masked during the growth of nanowires 11 and the nanowires 11 being masked during growth of the nanowires 11'.
  • the silicon part below the BOX layer is removed using a substrate transfer technique resulting in a substrate 25 comprising again a transparent substrate like quartz or glass.
  • Fig. 4 shows a perspective view of a fourth embodiment of a semiconductor sensor device according to the invention.
  • the sensor device 10 of this example is similar to the third example. The difference being as follows: the nanowires 11,11' are grown on a silicon substrate 15 that it is highly doped and forms an electrical connection region 13 contacting the nanowires 11,11' which are provided with a radiation-emitting pn-junction as in the first example.
  • the free end of the pluralities of nanowires 11,11' are attached on their other end with a further substrate 17 comprising glass or quartz which is covered by a transparent electrically conducting layer like an Indium-Tin oxide.
  • the substrate 17 forms another electrical connection region 14 for the pn-diodes formed in the nanowires 11,11'.
  • the transparent substrate 17 allows again that a detector 50 is positioned at that side of the sensor device 10.
  • the sensitivity of a sensor device according to the invention can be increased by a surface modification of the second subregion 2 which results in an increased sticking probability of the substance 30 to be detected on the surface of the second subregion 2.
  • the sensitivity of a sensor device according to the invention can be increased by a surface modification of the first and third subregions 1,3 which results in an decreased sticking probability of the substance 30 to be detected on the surface of said subregions 1,3. Both surface treatments can also be combined to increase the sensitivity.
  • ssDNA Single Strand Desoxyribo Nucleic Acid
  • ssDNA Single Strand Desoxyribo Nucleic Acid
  • a specific complimentary DNA chain that is to be detected can selectively be bonded to said ssDNA.
  • the binding of said complimentary DNA to the ssDNA will result in charge redistribution near the surface of the sensor device that then will be detected with high sensitivity.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Molecular Biology (AREA)
  • Materials Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Light Receiving Elements (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)

Abstract

L'invention concerne un dispositif (10) de détecteur semi-conducteur destiné à détecter une substance (30) comprenant une région (11, 11') semi-conductrice à structure mesa qui est formée sur une surface d'un corps semi-conducteur (12) tandis qu'un fluide (20) comprenant la substance (30) devant être détectée peut s'écouler le long de la région (11) semi-conductrice à structure mesa, la région (11) semi-conductrice à structure mesa comprenant, observée ultérieurement dans une direction longitudinale, une première sous-région semi-conductrice (1) comprenant un premier matériau semi-conducteur, une seconde sous-région semi-conductrice (2) comprenant un second matériau semi-conducteur différent du premier matériau semi-conducteur et une troisième sous-région (3) comprenant un troisième matériau semi-conducteur différent du second matériau semi-conducteur. Selon l'invention, les premier et troisième matériaux semi-conducteurs comprennent un matériau optiquement passif et le second matériau semi-conducteur comprend un matériau optiquement actif, la substance (30) devant être détectée peut changer une propriété de rayonnement électromagnétique (E) provenant de la seconde sous-région (2) et le dispositif (10) de détecteur semi-conducteur est formé de telle sorte que le rayonnement électromagnétique (E) dont la propriété a été changée puisse atteindre un détecteur (50). Le dispositif de détecteur (10) selon l'invention peut être très sensible, relativement compact et facile à fabriquer. Le rayonnement (E) peut provenir d'une source externe (40) ou peut être généré dans le dispositif (10).
EP07849347A 2006-12-08 2007-12-06 Dispositif de détecteur semi-conducteur, instrument de diagnostic comprenant un tel dispositif et procédé de fabrication d'un tel dispositif Withdrawn EP2092307A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP07849347A EP2092307A1 (fr) 2006-12-08 2007-12-06 Dispositif de détecteur semi-conducteur, instrument de diagnostic comprenant un tel dispositif et procédé de fabrication d'un tel dispositif

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP06125723 2006-12-08
PCT/IB2007/054937 WO2008068721A1 (fr) 2006-12-08 2007-12-06 Dispositif de détecteur semi-conducteur, instrument de diagnostic comprenant un tel dispositif et procédé de fabrication d'un tel dispositif
EP07849347A EP2092307A1 (fr) 2006-12-08 2007-12-06 Dispositif de détecteur semi-conducteur, instrument de diagnostic comprenant un tel dispositif et procédé de fabrication d'un tel dispositif

Publications (1)

Publication Number Publication Date
EP2092307A1 true EP2092307A1 (fr) 2009-08-26

Family

ID=39126175

Family Applications (1)

Application Number Title Priority Date Filing Date
EP07849347A Withdrawn EP2092307A1 (fr) 2006-12-08 2007-12-06 Dispositif de détecteur semi-conducteur, instrument de diagnostic comprenant un tel dispositif et procédé de fabrication d'un tel dispositif

Country Status (4)

Country Link
EP (1) EP2092307A1 (fr)
JP (1) JP2010511886A (fr)
CN (1) CN101558290A (fr)
WO (1) WO2008068721A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018125050A1 (de) * 2018-10-10 2020-04-16 Osram Opto Semiconductors Gmbh Optoelektronischer Sensor

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7301199B2 (en) * 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
US7416911B2 (en) * 2003-06-24 2008-08-26 California Institute Of Technology Electrochemical method for attaching molecular and biomolecular structures to semiconductor microstructures and nanostructures
EP1700336A1 (fr) * 2003-12-23 2006-09-13 Koninklijke Philips Electronics N.V. Composant a semi-conducteur comportant une heterojonction

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2008068721A1 *

Also Published As

Publication number Publication date
JP2010511886A (ja) 2010-04-15
WO2008068721A1 (fr) 2008-06-12
CN101558290A (zh) 2009-10-14

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