EP2033237A4 - Led device with re-emitting semiconductor construction and reflector - Google Patents

Led device with re-emitting semiconductor construction and reflector

Info

Publication number
EP2033237A4
EP2033237A4 EP07798368.2A EP07798368A EP2033237A4 EP 2033237 A4 EP2033237 A4 EP 2033237A4 EP 07798368 A EP07798368 A EP 07798368A EP 2033237 A4 EP2033237 A4 EP 2033237A4
Authority
EP
European Patent Office
Prior art keywords
reflector
led device
emitting semiconductor
semiconductor construction
construction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP07798368.2A
Other languages
German (de)
French (fr)
Other versions
EP2033237A1 (en
Inventor
Michael A Haase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of EP2033237A1 publication Critical patent/EP2033237A1/en
Publication of EP2033237A4 publication Critical patent/EP2033237A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13033—TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
EP07798368.2A 2006-06-12 2007-06-11 Led device with re-emitting semiconductor construction and reflector Withdrawn EP2033237A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US80453806P 2006-06-12 2006-06-12
PCT/US2007/070853 WO2007146863A1 (en) 2006-06-12 2007-06-11 Led device with re-emitting semiconductor construction and reflector

Publications (2)

Publication Number Publication Date
EP2033237A1 EP2033237A1 (en) 2009-03-11
EP2033237A4 true EP2033237A4 (en) 2013-10-02

Family

ID=38832113

Family Applications (1)

Application Number Title Priority Date Filing Date
EP07798368.2A Withdrawn EP2033237A4 (en) 2006-06-12 2007-06-11 Led device with re-emitting semiconductor construction and reflector

Country Status (6)

Country Link
EP (1) EP2033237A4 (en)
JP (1) JP2009540617A (en)
KR (1) KR20090018627A (en)
CN (1) CN101467273B (en)
TW (1) TW200810156A (en)
WO (1) WO2007146863A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008012316B4 (en) * 2007-09-28 2023-02-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Semiconductor light source with a primary radiation source and a luminescence conversion element
KR101701137B1 (en) 2009-04-30 2017-02-01 젤티크 애스세틱스, 인코포레이티드. Device, system and method of removing heat from subcutaneous lipid-rich cells
DE102013212372A1 (en) * 2013-06-27 2014-12-31 Robert Bosch Gmbh Optical assembly
CN105865668B (en) * 2015-01-20 2019-12-10 北京纳米能源与***研究所 Pressure sensing imaging array, equipment and manufacturing method thereof
JP7242886B2 (en) * 2019-10-02 2023-03-20 富士フイルム株式会社 backlight and liquid crystal display
JP2024044397A (en) * 2022-09-21 2024-04-02 株式会社トプコン plant sensor
JP2024044396A (en) * 2022-09-21 2024-04-02 株式会社トプコン plant sensor

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000091707A (en) * 1998-09-09 2000-03-31 Nec Corp Semiconductor device and its manufacture
US20040144987A1 (en) * 2003-01-27 2004-07-29 3M Innovative Properties Company Phosphor based light sources having a non-planar long pass reflector
US20050276301A1 (en) * 2004-06-14 2005-12-15 Spinelli Luis A InGaN diode-laser pumped II-VI semiconductor lasers
US20060054905A1 (en) * 2004-09-10 2006-03-16 The Regents Of The University Of California White, single or multi-color light emitting diodes by recycling guided modes

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3559446B2 (en) * 1998-03-23 2004-09-02 株式会社東芝 Semiconductor light emitting element and semiconductor light emitting device
US6853012B2 (en) * 2002-10-21 2005-02-08 Uni Light Technology Inc. AlGaInP light emitting diode
US7045375B1 (en) * 2005-01-14 2006-05-16 Au Optronics Corporation White light emitting device and method of making same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000091707A (en) * 1998-09-09 2000-03-31 Nec Corp Semiconductor device and its manufacture
US20040144987A1 (en) * 2003-01-27 2004-07-29 3M Innovative Properties Company Phosphor based light sources having a non-planar long pass reflector
US20050276301A1 (en) * 2004-06-14 2005-12-15 Spinelli Luis A InGaN diode-laser pumped II-VI semiconductor lasers
US20060054905A1 (en) * 2004-09-10 2006-03-16 The Regents Of The University Of California White, single or multi-color light emitting diodes by recycling guided modes

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2007146863A1 *

Also Published As

Publication number Publication date
WO2007146863A1 (en) 2007-12-21
EP2033237A1 (en) 2009-03-11
CN101467273B (en) 2012-05-09
KR20090018627A (en) 2009-02-20
CN101467273A (en) 2009-06-24
TW200810156A (en) 2008-02-16
JP2009540617A (en) 2009-11-19

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