EP2033237A4 - Led device with re-emitting semiconductor construction and reflector - Google Patents
Led device with re-emitting semiconductor construction and reflectorInfo
- Publication number
- EP2033237A4 EP2033237A4 EP07798368.2A EP07798368A EP2033237A4 EP 2033237 A4 EP2033237 A4 EP 2033237A4 EP 07798368 A EP07798368 A EP 07798368A EP 2033237 A4 EP2033237 A4 EP 2033237A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- reflector
- led device
- emitting semiconductor
- semiconductor construction
- construction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000010276 construction Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
- H01L2924/13033—TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US80453806P | 2006-06-12 | 2006-06-12 | |
PCT/US2007/070853 WO2007146863A1 (en) | 2006-06-12 | 2007-06-11 | Led device with re-emitting semiconductor construction and reflector |
Publications (2)
Publication Number | Publication Date |
---|---|
EP2033237A1 EP2033237A1 (en) | 2009-03-11 |
EP2033237A4 true EP2033237A4 (en) | 2013-10-02 |
Family
ID=38832113
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP07798368.2A Withdrawn EP2033237A4 (en) | 2006-06-12 | 2007-06-11 | Led device with re-emitting semiconductor construction and reflector |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP2033237A4 (en) |
JP (1) | JP2009540617A (en) |
KR (1) | KR20090018627A (en) |
CN (1) | CN101467273B (en) |
TW (1) | TW200810156A (en) |
WO (1) | WO2007146863A1 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008012316B4 (en) * | 2007-09-28 | 2023-02-02 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Semiconductor light source with a primary radiation source and a luminescence conversion element |
KR101701137B1 (en) | 2009-04-30 | 2017-02-01 | 젤티크 애스세틱스, 인코포레이티드. | Device, system and method of removing heat from subcutaneous lipid-rich cells |
DE102013212372A1 (en) * | 2013-06-27 | 2014-12-31 | Robert Bosch Gmbh | Optical assembly |
CN105865668B (en) * | 2015-01-20 | 2019-12-10 | 北京纳米能源与***研究所 | Pressure sensing imaging array, equipment and manufacturing method thereof |
JP7242886B2 (en) * | 2019-10-02 | 2023-03-20 | 富士フイルム株式会社 | backlight and liquid crystal display |
JP2024044397A (en) * | 2022-09-21 | 2024-04-02 | 株式会社トプコン | plant sensor |
JP2024044396A (en) * | 2022-09-21 | 2024-04-02 | 株式会社トプコン | plant sensor |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000091707A (en) * | 1998-09-09 | 2000-03-31 | Nec Corp | Semiconductor device and its manufacture |
US20040144987A1 (en) * | 2003-01-27 | 2004-07-29 | 3M Innovative Properties Company | Phosphor based light sources having a non-planar long pass reflector |
US20050276301A1 (en) * | 2004-06-14 | 2005-12-15 | Spinelli Luis A | InGaN diode-laser pumped II-VI semiconductor lasers |
US20060054905A1 (en) * | 2004-09-10 | 2006-03-16 | The Regents Of The University Of California | White, single or multi-color light emitting diodes by recycling guided modes |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3559446B2 (en) * | 1998-03-23 | 2004-09-02 | 株式会社東芝 | Semiconductor light emitting element and semiconductor light emitting device |
US6853012B2 (en) * | 2002-10-21 | 2005-02-08 | Uni Light Technology Inc. | AlGaInP light emitting diode |
US7045375B1 (en) * | 2005-01-14 | 2006-05-16 | Au Optronics Corporation | White light emitting device and method of making same |
-
2007
- 2007-06-11 CN CN2007800219318A patent/CN101467273B/en not_active Expired - Fee Related
- 2007-06-11 TW TW096121063A patent/TW200810156A/en unknown
- 2007-06-11 EP EP07798368.2A patent/EP2033237A4/en not_active Withdrawn
- 2007-06-11 JP JP2009515585A patent/JP2009540617A/en active Pending
- 2007-06-11 KR KR1020087030065A patent/KR20090018627A/en not_active Application Discontinuation
- 2007-06-11 WO PCT/US2007/070853 patent/WO2007146863A1/en active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000091707A (en) * | 1998-09-09 | 2000-03-31 | Nec Corp | Semiconductor device and its manufacture |
US20040144987A1 (en) * | 2003-01-27 | 2004-07-29 | 3M Innovative Properties Company | Phosphor based light sources having a non-planar long pass reflector |
US20050276301A1 (en) * | 2004-06-14 | 2005-12-15 | Spinelli Luis A | InGaN diode-laser pumped II-VI semiconductor lasers |
US20060054905A1 (en) * | 2004-09-10 | 2006-03-16 | The Regents Of The University Of California | White, single or multi-color light emitting diodes by recycling guided modes |
Non-Patent Citations (1)
Title |
---|
See also references of WO2007146863A1 * |
Also Published As
Publication number | Publication date |
---|---|
WO2007146863A1 (en) | 2007-12-21 |
EP2033237A1 (en) | 2009-03-11 |
CN101467273B (en) | 2012-05-09 |
KR20090018627A (en) | 2009-02-20 |
CN101467273A (en) | 2009-06-24 |
TW200810156A (en) | 2008-02-16 |
JP2009540617A (en) | 2009-11-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20081219 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR |
|
AX | Request for extension of the european patent |
Extension state: AL BA HR MK RS |
|
DAX | Request for extension of the european patent (deleted) | ||
A4 | Supplementary search report drawn up and despatched |
Effective date: 20130829 |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 33/00 20100101AFI20130823BHEP |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN |
|
18W | Application withdrawn |
Effective date: 20140603 |