EP1965256A4 - Positive photosensitive resin composition, and semiconductor device and display using same - Google Patents

Positive photosensitive resin composition, and semiconductor device and display using same

Info

Publication number
EP1965256A4
EP1965256A4 EP06832830A EP06832830A EP1965256A4 EP 1965256 A4 EP1965256 A4 EP 1965256A4 EP 06832830 A EP06832830 A EP 06832830A EP 06832830 A EP06832830 A EP 06832830A EP 1965256 A4 EP1965256 A4 EP 1965256A4
Authority
EP
European Patent Office
Prior art keywords
display
semiconductor device
resin composition
same
photosensitive resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP06832830A
Other languages
German (de)
French (fr)
Other versions
EP1965256B1 (en
EP1965256A1 (en
Inventor
Toshio Banba
Ayako Mizushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Bakelite Co Ltd
Original Assignee
Sumitomo Bakelite Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co Ltd filed Critical Sumitomo Bakelite Co Ltd
Priority to EP13171219.2A priority Critical patent/EP2639638A1/en
Publication of EP1965256A1 publication Critical patent/EP1965256A1/en
Publication of EP1965256A4 publication Critical patent/EP1965256A4/en
Application granted granted Critical
Publication of EP1965256B1 publication Critical patent/EP1965256B1/en
Not-in-force legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3192—Multilayer coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05569—Disposition the external layer being disposed on a redistribution layer on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05571—Disposition the external layer being disposed in a recess of the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1302—Disposition
    • H01L2224/13022—Disposition the bump connector being at least partially embedded in the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Polyamides (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
EP06832830.1A 2005-11-30 2006-11-17 Positive photosensitive resin composition, and use of the same for manufacturing a semiconductor device and a display Not-in-force EP1965256B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP13171219.2A EP2639638A1 (en) 2005-11-30 2006-11-17 Positive photosensitive resin composition, and semiconductor device and display therewith

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005346804 2005-11-30
JP2006010837 2006-01-19
PCT/JP2006/322951 WO2007063721A1 (en) 2005-11-30 2006-11-17 Positive photosensitive resin composition, and semiconductor device and display using same

Related Child Applications (1)

Application Number Title Priority Date Filing Date
EP13171219.2A Division-Into EP2639638A1 (en) 2005-11-30 2006-11-17 Positive photosensitive resin composition, and semiconductor device and display therewith

Publications (3)

Publication Number Publication Date
EP1965256A1 EP1965256A1 (en) 2008-09-03
EP1965256A4 true EP1965256A4 (en) 2011-04-06
EP1965256B1 EP1965256B1 (en) 2014-04-30

Family

ID=38092056

Family Applications (2)

Application Number Title Priority Date Filing Date
EP13171219.2A Withdrawn EP2639638A1 (en) 2005-11-30 2006-11-17 Positive photosensitive resin composition, and semiconductor device and display therewith
EP06832830.1A Not-in-force EP1965256B1 (en) 2005-11-30 2006-11-17 Positive photosensitive resin composition, and use of the same for manufacturing a semiconductor device and a display

Family Applications Before (1)

Application Number Title Priority Date Filing Date
EP13171219.2A Withdrawn EP2639638A1 (en) 2005-11-30 2006-11-17 Positive photosensitive resin composition, and semiconductor device and display therewith

Country Status (8)

Country Link
US (1) US8080350B2 (en)
EP (2) EP2639638A1 (en)
JP (2) JP4692547B2 (en)
KR (1) KR101183395B1 (en)
CN (2) CN101322073B (en)
MY (1) MY151139A (en)
TW (2) TW201346448A (en)
WO (1) WO2007063721A1 (en)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI258176B (en) * 2005-05-12 2006-07-11 Siliconware Precision Industries Co Ltd Semiconductor device and fabrication method thereof
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MY146083A (en) * 2007-02-19 2012-06-29 Sumitomo Bakelite Co Photosensitive resin composition, cured film, protective film, insulating film, semiconductor device and display device using the same
US20080251919A1 (en) * 2007-04-12 2008-10-16 Chien-Hsueh Shih Ultra-low resistance interconnect
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JP5410918B2 (en) * 2008-10-20 2014-02-05 チェイル インダストリーズ インコーポレイテッド Positive photosensitive resin composition
JP5486201B2 (en) * 2009-02-25 2014-05-07 旭化成イーマテリアルズ株式会社 Photosensitive resin composition
JP5562585B2 (en) * 2009-07-06 2014-07-30 旭化成イーマテリアルズ株式会社 Photosensitive resin composition
KR101200140B1 (en) * 2009-08-31 2012-11-12 금호석유화학 주식회사 Positive typed photosensitive composition
JPWO2011046230A1 (en) * 2009-10-16 2013-03-07 シャープ株式会社 Radiation-sensitive resin composition and method for forming interlayer insulating film
KR101333698B1 (en) * 2009-11-10 2013-11-27 제일모직주식회사 Positive photosensitive resin composition
KR101333704B1 (en) * 2009-12-29 2013-11-27 제일모직주식회사 Positive type photosensitive resin composition
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KR20140086724A (en) * 2012-12-28 2014-07-08 제일모직주식회사 Photosensitive resin composition for insulating film of display device, insulating film using the same, and display device using the same
US10896942B2 (en) * 2015-03-11 2021-01-19 Toray Industries, Inc. Organic EL display device and method for manufacturing same
KR102245394B1 (en) * 2015-03-27 2021-04-28 도레이 카부시키가이샤 Photosensitive resin composition for a thin film transistor, a cured film, a thin film transistor, a liquid crystal display device or an organic electroluminescent display device, a method of manufacturing a cured film, a method of manufacturing a thin film transistor, and a method of manufacturing a liquid crystal display device or an organic electroluminescent display device
CN107615171A (en) * 2015-05-28 2018-01-19 富士胶片株式会社 Manufacture method, circuit layout, input unit and the display device of circuit layout
JP6668004B2 (en) * 2015-06-09 2020-03-18 カンタツ株式会社 Circuit pattern manufacturing apparatus, circuit pattern manufacturing method, and circuit pattern manufacturing program
KR102574704B1 (en) * 2015-10-30 2023-09-05 도레이 카부시키가이샤 Method for manufacturing a substrate and method for manufacturing a light emitting element using the same
JP6839476B2 (en) * 2016-09-26 2021-03-10 カンタツ株式会社 Pattern forming sheet
JP6892727B2 (en) 2016-09-26 2021-06-23 カンタツ株式会社 Pattern manufacturing equipment, pattern manufacturing method and pattern manufacturing program
JP2018182126A (en) 2017-04-17 2018-11-15 カンタツ株式会社 Pattern forming sheet, pattern manufacturing apparatus, and pattern manufacturing method
KR102658153B1 (en) * 2017-09-28 2024-04-16 제이에스알 가부시끼가이샤 Radiation-sensitive resin composition and use thereof
US11343918B2 (en) * 2017-12-20 2022-05-24 Sumitomo Electric Industries, Ltd. Method of making printed circuit board and laminated structure
JP7180189B2 (en) * 2018-08-06 2022-11-30 住友ベークライト株式会社 Photosensitive resin composition, structure, optical component, and method for producing optical component
KR102302049B1 (en) * 2018-09-03 2021-09-13 삼성에스디아이 주식회사 Photosensitive resin composition, photosensitive resin layer and electronic device using the same
CN113168092A (en) * 2018-10-03 2021-07-23 艾曲迪微***股份有限公司 Photosensitive resin composition, method for producing patterned cured product, interlayer insulating film, covercoat, surface protective film, and electronic component

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0459395A2 (en) * 1990-05-29 1991-12-04 Sumitomo Bakelite Company Limited Positive photo-sensitive resin composition
EP0961169A1 (en) * 1998-05-29 1999-12-01 Hitachi Chemical DuPont MicroSystems Ltd. Photosensitive polymer composition, method for forming relief patterns, and electronic parts
EP1431822A1 (en) * 2001-09-26 2004-06-23 Nissan Chemical Industries, Ltd. Positive photosensitive polyimide resin composition

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE539175A (en) 1954-08-20
US2772975A (en) 1955-07-08 1956-12-04 Geo Wiedemann Brewing Co Inc Injecting of hops in the brewing of beer
US3669658A (en) 1969-06-11 1972-06-13 Fuji Photo Film Co Ltd Photosensitive printing plate
JPS58174418A (en) 1982-04-07 1983-10-13 Toshiba Corp Photopolymerizable composition
JPS6446862A (en) 1987-08-18 1989-02-21 Fujitsu Ltd Bus controller
TW502135B (en) * 1996-05-13 2002-09-11 Sumitomo Bakelite Co Positive type photosensitive resin composition and process for preparing polybenzoxazole resin film by using the same
JPH1154934A (en) 1997-06-06 1999-02-26 Ibiden Co Ltd Multilayered printed wiring board and its manufacture
JP3873263B2 (en) * 1997-09-22 2007-01-24 Ｊｓｒ株式会社 Radiation-sensitive resin composition, protective film, interlayer insulating film, and method for forming these films
JP2000027266A (en) 1998-07-08 2000-01-25 Toto Ltd Human body washing nozzle
JP2000272266A (en) * 1999-01-20 2000-10-03 Toray Ind Inc Original plate for direct drawing type waterless lithographic printing plate
JP4310968B2 (en) * 2001-06-22 2009-08-12 東レ株式会社 Lens and optical waveguide obtained using positive photosensitive resin composition
JP2004029535A (en) * 2002-06-27 2004-01-29 Sumitomo Chem Co Ltd Radiation-sensitive resin composition
JP4374840B2 (en) 2002-08-30 2009-12-02 東レ株式会社 Positive photosensitive resin composition, semiconductor element manufacturing method, and semiconductor device
EP1609024B1 (en) * 2003-03-11 2015-09-30 Fujifilm Electronic Materials USA, Inc. Photosensitive resin compositions
KR20060002768A (en) * 2003-03-11 2006-01-09 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. Novel photosensitive resin compositions
JP2005265866A (en) * 2003-03-25 2005-09-29 Sumitomo Chemical Co Ltd Method of forming hardening resin pattern
JP2005031642A (en) * 2003-06-19 2005-02-03 Chisso Corp Positive radiation-sensitive polymer composition, thin film using the composition and element using the thin film
JP4661245B2 (en) * 2004-02-03 2011-03-30 住友ベークライト株式会社 Positive photosensitive resin composition, semiconductor device and display element using the positive photosensitive resin composition, and manufacturing method of semiconductor device and display element
JP2005266189A (en) 2004-03-18 2005-09-29 Sumitomo Bakelite Co Ltd Photosensitive resin composition, and semiconductor device and display element using the same
KR100774672B1 (en) * 2004-05-07 2007-11-08 히다치 가세이듀퐁 마이쿠로시스데무즈 가부시키가이샤 Positive photosensitive resin composition, method for forming pattern, and electronic component
EP1662322B1 (en) * 2004-11-26 2017-01-11 Toray Industries, Inc. Positive type photo-sensitive siloxane composition, curing film formed by the composition and device with the curing film
KR101112545B1 (en) * 2004-12-16 2012-03-13 스미또모 가가꾸 가부시끼가이샤 Photosensitive resin and thin film panel comprising pattern made of the photosensitive resin and method for manufacturing the thin film panel
EP1755365B1 (en) * 2005-08-19 2009-05-06 JSR Corporation Positive photosensitive insulating resin composition, cured product thereof, and electronic component

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0459395A2 (en) * 1990-05-29 1991-12-04 Sumitomo Bakelite Company Limited Positive photo-sensitive resin composition
EP0961169A1 (en) * 1998-05-29 1999-12-01 Hitachi Chemical DuPont MicroSystems Ltd. Photosensitive polymer composition, method for forming relief patterns, and electronic parts
EP1431822A1 (en) * 2001-09-26 2004-06-23 Nissan Chemical Industries, Ltd. Positive photosensitive polyimide resin composition

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2007063721A1 *

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JPWO2007063721A1 (en) 2009-05-07
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CN101322073B (en) 2011-12-28
TW200739264A (en) 2007-10-16
EP1965256B1 (en) 2014-04-30
EP2639638A1 (en) 2013-09-18
JP2011102997A (en) 2011-05-26
KR101183395B1 (en) 2012-09-14
JP5071554B2 (en) 2012-11-14
TW201346448A (en) 2013-11-16
KR20080072083A (en) 2008-08-05
US20090166818A1 (en) 2009-07-02
WO2007063721A1 (en) 2007-06-07
US8080350B2 (en) 2011-12-20
MY151139A (en) 2014-04-30
EP1965256A1 (en) 2008-09-03
CN102393607B (en) 2013-11-13
JP4692547B2 (en) 2011-06-01

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