EP1683197A2 - Power module - Google Patents
Power moduleInfo
- Publication number
- EP1683197A2 EP1683197A2 EP04797835A EP04797835A EP1683197A2 EP 1683197 A2 EP1683197 A2 EP 1683197A2 EP 04797835 A EP04797835 A EP 04797835A EP 04797835 A EP04797835 A EP 04797835A EP 1683197 A2 EP1683197 A2 EP 1683197A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- connection
- power module
- circuit units
- circuit unit
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
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- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
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Definitions
- the invention is in the field of power electronics, in particular power semiconductor electronics, and relates to a power module with a plurality of circuit units with connection contacts which are electrically connected to one another via at least one current-carrying tab.
- Power modules of this type often have a plurality of circuit units connected in parallel in order to achieve a high current carrying capacity.
- the circuit units can be implemented, for example, on substrates on which power components are arranged which can be electrically contacted via conductor tracks and connection contact points (so-called contact pads). In order to implement the parallel connection of the circuit units, these are connected to one another via current-carrying tabs.
- DE 197 21 061 AI shows a power module with a housing for accommodating several electronic components and with several connection contacts for internal and / or external electrical connection.
- the module comprises several ceramic substrates, on which semiconductor components are arranged and connected to form circuit units.
- the circuit units can be contacted externally via a connection block, which also connects the circuit units to one another.
- the connection block is comparatively complex and high-rise. Detailed information regarding the circuitry of the circuit units cannot be found in DE 197 21 061 AI.
- the object of the present invention is to provide a power module and a method for its production, in which the current-carrying tab has only a small footprint and is simple to use with the circuit unit by means of common Binding techniques and can be connected without affecting the other components of the module.
- connection contacts are based on the basic idea of designing the current-carrying tab in several parts, a first part being permanently electrically connected separately and independently of the other parts to the circuit unit or to conductor tracks or connection pads (generally referred to as connection contacts) provided thereon.
- the first part has a foot region which is connected to the connection contact and a neck region which preferably extends essentially perpendicular to the circuit unit and which at the end has a simple assembly or electrical connection to a second part of the current-carrying tab allows.
- a preferred further development of the invention provides that the first part is L-shaped and its foot region is connected to the connection contact of the circuit unit.
- the second part is preferably designed as a low-induction conductor track or as a strip conductor and runs essentially parallel to the level of the circuit units.
- the second part preferably causes two or more circuit units to be connected in parallel in that first parts of a plurality of circuit units are connected to it.
- the second part can also lead to an external connection.
- This manufacturing step can be carried out as a pre-assembly step, at a time when the connection contact or the corresponding (foot) area of the first part is still easily accessible from all sides. In this way, inexpensive, proven and reliable connection technologies - eg bonding, soldering or laser welding - can be used.
- Another advantage of the invention is that the electrical connection of the first part to the connection contact can be tested before further assembly.
- a very space-saving, compact design of the power module is achieved by arranging the second part of the current-carrying tab essentially parallel to the level of the circuit units.
- a production-technically preferred embodiment of the method according to the invention provides that a plurality of circuit units are first connected to the first part of their current-carrying tab, the circuit units are arranged on a common carrier and then the respective first parts with the formation of current-carrying tabs with a common second part get connected.
- the circuit units can e.g. can be connected to a common base plate by soldering. They are advantageously positioned by means of a mounting template which, during mounting, is in the plane of the second part of the
- Tab is arranged and, for example, has openings for the passage of the free ends of the first parts.
- FIG. 1 shows the pre-assembly of a circuit unit in a first • assembly sequence
- FIG. 2 shows the pre-assembly of a circuit unit in a varied assembly sequence
- FIG. 3 shows the assembly of several circuit units to form a power module according to the invention
- FIG. 4 shows a circuit diagram with two identically constructed half bridges, which are provided for parallel connection in a power module according to the invention
- FIG. 5 shows a circuit diagram of a half-bridge module with three identically constructed half-bridges that are electrically connected in parallel with one another
- FIG. 6 shows a perspective view of a power module designed as a half-bridge module with a plurality of circuit units electrically connected in parallel by means of current-carrying tabs, with the housing removed,
- FIG. 7 shows a side view of a cross section through the half-bridge module according to FIG. 6.
- the preassembly of a circuit unit shown in FIG. 1 in three assembly steps a), b), c) begins with the application of a power component 1, e.g. a power semiconductor, onto a conductor track 2 of a substrate 3, preferably by soldering (assembly step a)). Are on the substrate. additional conductor tracks or connecting contacts 4, 5, 6 are provided.
- the power semiconductor 1 is contacted by means of bonding wires 7, 8.
- connection contacts 4, 5 are then (assembly step c)) with the foot 10, 11 of a first part 12, 14 electrically connected by soldering, laser or ultrasonic welding.
- the parts 12, 14 are L-shaped and project upward with the free end region of the L (neck region) 16, 17 essentially perpendicular to the plane 18 of the circuit unit.
- the connection of the first parts 12, 14 takes place before further assembly and independently of further parts 25, 27 (FIG. 3), which together with the parts 12, 14 will each form a current-carrying tab.
- the connection of the parts 12, 14 to the connection contacts 4, 5 can be pretested at this stage, which enables a considerable increase in the quality of production and reliability.
- the parts 12, 14 are first For example, connected by laser welding to the connection contacts 4, 5 on the substrate 3. Only then is the power semiconductor 1 placed on the substrate 3 and contacted by soldering and via bonding wires 7, 8. This has the advantage that the power semiconductor 1 is produced by laser welding Parts 12, 14 can not be affected and the range of motion for laser welding is not limited.
- FIG. 3 shows two circuit units 20, 21 preassembled according to FIG. 1 or 2. These are arranged on a common base plate 24.
- the free end regions 16, 16 "of the respective first parts 12, 12" are provided with a second part 25 to form a current-carrying tab 26 - for example by pressing, pressing, squeezing, bonding, crimping, riveting, soldering, in particular inductive brazing, welding , especially cold, ultrasonic, laser, inductive or resistance welding, - connected.
- the free end regions 17, 17 ′′ of the respective first parts 14, 14 ′ are connected to a second part 27 to form a current-carrying tab 28.
- the parts 12, 12 "or 14, 14" and 25, 27 thus complement each other - after their separate assembly - to form a current-carrying tab 26, 28 which has the corresponding connection contacts (for example 5 and 5 ") of the circuit units 20 and 21
- the second parts 25 and 27 are spaced apart from one another in parallel or plane-parallel, and the module formed in this way can be introduced into a housing in a manner known per se and, if necessary, cast.
- a mounting template can be used for precise positioning, which has openings exactly where later the end regions 16, 16 "; 17, 17" of the first parts and the second are arranged To penetrate part.
- the circuit units are thus aligned according to the template.
- the assembly of the module according to the invention is thus considerably simplified.
- the quality assurance is improved by the possibility of early testing of the connection between the first parts 12, 14 and the assigned connection contacts.
- the design of the current-carrying tab allows a very compact and space-saving construction of the module.
- a power module according to the invention is designed as a half-bridge module.
- a half-bridge module preferably comprises a plurality of half-bridges, which are each arranged on a substrate. Each half bridge forms a circuit unit.
- FIG. 4 shows a circuit diagram with two such circuit units 31, 32.
- Each of the circuit units 31, 32 comprises two power semiconductors 1, 1 ", which are connected in series with their load paths.
- the power semiconductors 1, 1" can be used, for example, as transistors, thyristors, triacs , FETs, MOSFETs or IGBTs.
- antipa- A free-wheeling diode 9, 9 " is connected in parallel with each load path of a power semiconductor 1, 1 '.
- Each of the circuit units 31, 32 is implemented on a substrate.
- the power semiconductors 1, 1 ′ and the free-wheeling diodes 9, 9 ′′ of a circuit unit 31, 32 are connected to one another in the plane of the respective substrate by means of conductor tracks and to connection contacts.
- Each of these conductor tracks has an inductance. corresponding to inductivities L1 to L5.
- connection contacts 4, 5, 6 of the circuit units 31, 32 are connected to one another in an electrically conductive manner.
- a multi-part current-carrying tab corresponding to the current-carrying tabs 26, 28 according to FIG. 3 is preferably used for this purpose.
- each of the circuit units 31, 32 has first parts 121, 131, 141 which are connected to the connection contacts for the negative supply voltage, the phase output or the positive supply voltage.
- the first parts 121, 131, 141 are preferably designed corresponding to the first parts 12, 12 ', 14, 14' according to FIGS. 1 to 3.
- Each of the first parts 121, 131, 141 has an inductance, which is represented in FIG. 4 by substitute inductances L6, L8, L7.
- the inductances L6, L8, L7 of the first parts 121, 131, 141 are preferably between 5 nH and 100 nH, particularly preferably about 20 nH, while in comparison the inductances L 1 to L5, each preferably less than 5 nH, are significantly less noticeable.
- FIG. 5 shows a number of circuit units 31, 32, 33, which preferably have a structure according to the circuit units 31, 32 according to FIG. 4 and are of identical design.
- the corresponding first parts of the circuit units 31, 32, 33 are electrically conductively connected by means of second parts 29, 27, 25.
- the corresponding first parts of the circuit units 31, 32, 33 together with the connecting second part 29, 27 and 25 each form a current-carrying tab.
- the associated second parts 29, 27 and 25, respectively, connecting the first parts of two adjacent circuit units 31, 32, 33 have sections 290, 270, 250 with inductors, which are shown in FIG. 5 as substitute inductors L9, L10 and Lll ,
- the value of these substitute inductances L9, L10, Lll is preferably less than 10 nH, particularly preferably less than 5 nH.
- FIG. 6a shows a perspective view of a power module 40 with six circuit units 20, each having a half-bridge, and comprising a substrate and power elements' and conductor tracks.
- the circuit units 20 are arranged on a base plate 24 and electrically connected in parallel by means of current-carrying tabs 25, 27, 29 according to the invention.
- the circuit units 20 are preferably constructed identically, arranged in a connection direction r in succession and equidistant from one another.
- the substrates 3 can advantageously be arranged in accordance with the statements in the German patent application DE 10 2004 042 367.
- each of the circuit units 20 comprises a half bridge corresponding to the half bridges 31, 32, 33 according to FIGS. 4 and 5.
- Each of the circuit units 20 has first parts 121 for connecting the negative supply voltage, 141 for connecting the positive supply voltage, and 131 for the phase output.
- the first parts 131, 141 and 121 which are connected to one another by means of a second part 25, 27, 29, are preferably arranged in a row one behind the other in the connecting direction r.
- the first parts 121, 141 for supplying the negative or positive supply voltage in the connection direction r are arranged in a row and with alternating polarity in succession.
- the second parts 25, 27, 29 are preferably essentially flat and are arranged parallel to the plane of the circuit units 25 and the base plate 24.
- the second parts 25, 27, 29 have connecting lugs 251, 271 and 291, which are preferably formed in one piece with the respective second parts 25, 27, 29.
- the connecting lugs 251, 271, 291 can thus be punched out of a flat sheet metal in a simple manner using a punching tool and bent into the desired shape.
- the connection tabs 251, 271, 291 are preferably arranged on the side of the relevant second part 25, 29, 27 facing away from the base plate 24.
- two connection lugs 251, 271, 291 of the same electrical potential are arranged in pairs and opposite one another in a direction transverse to the connection direction r. It is advantageous if the connection lugs 271, 291 with different polarity +/- are arranged alternately in succession in the connection direction r.
- the first parts have feet 122, 142 and feet 132 (see FIG. 6b) which are connected to corresponding connection contacts 6, 4 and 5 (see FIG. 6b).
- the arrangement of the esse can be carried out in an advantageous manner according to the statements in DE 10 2004 027 185.
- connection lugs 251 for connecting the phase output are preferably designed for a higher current carrying capacity than the connection lugs 271, 291 for the positive or negative supply voltage. This can be achieved in particular in that the dimensions of the connection lugs 251 in the connection direction r for the phase output are chosen larger than the dimensions of the connection lugs 271, 291 for the connection of the positive or negative supply voltage.
- the half-bridge module has a section 45 in the connection direction r in which none of the second parts 25, 27, 29 is provided with connecting lugs 251, 271 or 291.
- an area is created above the second parts 25, 27, 29, which is free of main electrical connections and can be used, for example, to accommodate control circuits or sensors.
- FIG. 6b shows a view corresponding to FIG. 6a, but with a power module 40 rotated by 180 °.
- This view reveals the first parts 131, which are connected to connection contacts 5 for connecting the phase outputs.
- the first parts 131 are arranged opposite the first parts 121, 141 in a direction transverse to the connection direction r.
- FIG. 7 shows a side view of a cross section through a power module 40, which corresponds to the power module 40 according to FIGS. 6a and 6b, but also has a housing.
- the cross section runs transversely to the connection direction r between a connection plate 271 and an adjacent connection plate 291 with a view of the connection plate 271 against the connection direction r.
- the housing 40 comprises a housing body 41 and the base plate 24.
- a substrate is connected to the base plate 24, which comprises a circuit unit 20.
- the circuit unit 20 has conductor tracks 2 in addition to the power semiconductors (not shown).
- a first part 121 connects the circuit unit 20 to a second part 27. Accordingly, a further first part 131 connects the circuit unit 20 to a second part 25.
- the arrangement comprises three second parts 25, 27, 29, which are guided parallel to one another and are electrically insulated from one another by means of insulating foils 51, 52.
- the second parts 25, 27, 29 have connection lugs 251, 271, 291, of which only connection lugs 271 can be seen in FIG.
- the connecting lugs 271 as well as the non-recognizable connecting lugs 251, 291 are led out of the housing body 41 through openings 44.
- the connection lugs can first be inserted through the openings 44 and then bent into their final position.
- Each of the second parts 25, 27, 29 has a continuous, preferably lower section 252, 272, 292, which is spaced apart from the circuit units 20 to be connected to one another.
- the continuous sections 252, 272, 292 are provided to connect corresponding first parts of the circuit units 20 to be electrically connected in parallel, and preferably extend in the connection direction r from the first to the last of the circuit units 20.
- the continuous sections run here 252, 272, 292 are preferably plane-parallel to one another and plane-parallel to the plane of the base plate 24.
- the continuous sections 252, 272, 292 are the second Parts 25, 27, 29 are arranged inside the housing, particularly preferably inside the housing body 41.
- the housing can be encapsulated by means of a casting compound, which preferably extends from the base plate 24 to beyond the continuous section 252 of the second part 25 which is the most distant from the base plate 24.
- the continuous sections 252, 272, 292 are thus enclosed by the potting compound.
- the connecting lugs of the second parts protrude from the sealing compound.
- connection lug (neg. Supply voltage)
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Abstract
Disclosed is a power module comprising several circuit units (20, 21) that are electrically connected in parallel and are provided with terminal contacts (5, 5′) which are electrically and mechanically interconnected via at least one current-conducting saddle (26). In order to create a power module which is easy to produce and in which the current-conducting saddle (26) requires little space, the saddle (26) is embodied in several parts while encompassing a terminal element (12) that can be connected in a fixed manner to a terminal contact (5) of a circuit unit (20) independently of a connecting element (25) of the saddle (26). The connecting element (25) of the saddle (26) extends on a plane that is spaced apart from the circuit unit (20) while being electrically connected to the terminal element (12).
Description
Beschreibungdescription
Leistungsmodulpower module
Die Erfindung liegt auf dem Gebiet der Leistungselektronik, insbesondere der Leistungshalbleiterelektronik, und betrifft ein Leistungsmodul mit mehreren Schaltungseinheiten mit Anschlusskontakten, die über mindestens eine stromführende Lasche elektrisch miteinander verbunden sind.The invention is in the field of power electronics, in particular power semiconductor electronics, and relates to a power module with a plurality of circuit units with connection contacts which are electrically connected to one another via at least one current-carrying tab.
Derartige Leistungsmodule weisen zur Realisierung einer hohen Stromtragfähigkeit häufig mehrere parallel geschaltete Schaltungseinheiten auf. Die Schaltungseinheiten können beispielsweise auf Substraten realisiert sein, auf denen Leistungsbau- elemente angeordnet sind, die über Leiterbahnen und Anschlusskontaktstellen (sog. Kontaktpads) elektrisch kontak- tierbar sind. Um die Parallelschaltung der Schaltungseinheiten zu realisieren, sind diese über stromführende Laschen miteinander verbunden.Power modules of this type often have a plurality of circuit units connected in parallel in order to achieve a high current carrying capacity. The circuit units can be implemented, for example, on substrates on which power components are arranged which can be electrically contacted via conductor tracks and connection contact points (so-called contact pads). In order to implement the parallel connection of the circuit units, these are connected to one another via current-carrying tabs.
Aus der DE 197 21 061 AI geht ein Leistungsmodul mit einem Gehäuse zur Aufnahme mehrerer elektronischer Bauelemente und mit mehreren Anschlusskontakten zur internen und/oder externen elektrischen Verbindung hervor. Das Modul umfasst mehrere Keramiksubstrate, auf denen unter Bildung von Schaltungseinheiten jeweils Halbleiterbauelemente angeordnet und verschaltet sind. Die Schaltungseinheiten sind über einen Anschlussblock extern kontaktierbar, der auch die Schaltungseinheiten miteinander verbindet. Der Anschlussblock ist vergleichsweise aufwendig und hochbauend. Detaillierte Angaben hinsichtlich der Verschaltung der Schaltungseinheiten sind der DE 197 21 061 AI nicht entnehmbar.DE 197 21 061 AI shows a power module with a housing for accommodating several electronic components and with several connection contacts for internal and / or external electrical connection. The module comprises several ceramic substrates, on which semiconductor components are arranged and connected to form circuit units. The circuit units can be contacted externally via a connection block, which also connects the circuit units to one another. The connection block is comparatively complex and high-rise. Detailed information regarding the circuitry of the circuit units cannot be found in DE 197 21 061 AI.
Aufgabe der vorliegenden Erfindung ist es, ein Leistungsmodul und ein Verfahren zu dessen Herstellung anzugeben, bei dem die stromführende Lasche nur einen geringen Platzbedarf hat und mit der Schaltungseinheit einfach mittels gängiger Ver-
bindungstechniken und ohne Beeinträchtigung der übrigen Bauteile des Moduls verbindbar ist.The object of the present invention is to provide a power module and a method for its production, in which the current-carrying tab has only a small footprint and is simple to use with the circuit unit by means of common Binding techniques and can be connected without affecting the other components of the module.
Diese Aufgabe wird erfindungsgemäß durch ein Leistungsmodul mit den Merkmalen des Anspruchs 1 sowie durch ein Verfahren mit den Merkmalen des Anspruchs 4 gelöst. Vorteilhafte Ausgestaltungen und Weiterbildungen der Erfindung sind Gegenstand von Unteransprüchen.This object is achieved according to the invention by a power module with the features of claim 1 and by a method with the features of claim 4. Advantageous refinements and developments of the invention are the subject of dependent claims.
Die vorliegende Erfindung basiert auf dem Grundgedanken, die stromführende Lasche mehrteilig auszuführen, wobei ein erster Teil separat und unabhängig von den übrigen Teilen mit der Schaltungseinheit bzw. mit auf dieser vorgesehenen Leiterbahnen oder Anschlussflecken (allgemein als Anschlusskontakte bezeichnet) dauerhaft elektrisch verbunden wird.The present invention is based on the basic idea of designing the current-carrying tab in several parts, a first part being permanently electrically connected separately and independently of the other parts to the circuit unit or to conductor tracks or connection pads (generally referred to as connection contacts) provided thereon.
Der erste Teil hat einen Fußbereich, der mit dem Anschlusskontakt verbunden ist, und einen Halsbereich, der sich bevorzugt im wesentlichen senkrecht zur Schaltungseinheit er- streckt und der an seinem Ende eine einfache Montage bzw. e- lektrische Verbindung mit einem zweiten Teil der stromführenden Lasche ermöglicht. In diesem Zusammenhang sieht eine bevorzugte Fortbildung der Erfindung vor, dass der erste Teil L-förmig ausgebildet ist und mit seinem Fußbereich mit dem Anschlusskontakt der Schaltungseinheit verbunden ist.The first part has a foot region which is connected to the connection contact and a neck region which preferably extends essentially perpendicular to the circuit unit and which at the end has a simple assembly or electrical connection to a second part of the current-carrying tab allows. In this context, a preferred further development of the invention provides that the first part is L-shaped and its foot region is connected to the connection contact of the circuit unit.
Der zweite Teil ist bevorzugt als niederinduktive Leiterbahn oder als Bandleiter ausgeführt und verläuft im wesentlichen parallel zur Ebene der Schaltungseinheiten. Der zweite Teil bewirkt die Parallelschaltung zweier oder mehr Schaltungseinheiten bevorzugt dadurch, dass an ihn jeweils erste Teile mehrerer Schaltungseinheiten angeschlossen sind. Der zweite Teil kann außerdem auch zu einem externen Anschluss führen.The second part is preferably designed as a low-induction conductor track or as a strip conductor and runs essentially parallel to the level of the circuit units. The second part preferably causes two or more circuit units to be connected in parallel in that first parts of a plurality of circuit units are connected to it. The second part can also lead to an external connection.
Dadurch ergibt sich als wesentlicher Vorteil der Erfindung, dass der erste Teil der stromführenden Lasche unabhängig von den übrigen Bauteilen des Leistungsmoduls mit dem vorgesehe-
nen Anschlusskontakt vorab verbunden werden kann. Dieser Fertigungsschritt kann als Vormontageschritt durchgeführt werden, und zwar zu einem Zeitpunkt, zu dem der Anschlusskontakt bzw. der entsprechende (Fuß-) Bereich des ersten Teils noch allseits gut zugänglich ist. Dadurch können preiswerte, bewährte und zuverlässige Verbindungstechnologien - z.B. Bonden, Löten oder Laserschweißen - angewendet werden.This has the essential advantage of the invention that the first part of the current-carrying tab is independent of the other components of the power module with the intended NEN contact can be connected in advance. This manufacturing step can be carried out as a pre-assembly step, at a time when the connection contact or the corresponding (foot) area of the first part is still easily accessible from all sides. In this way, inexpensive, proven and reliable connection technologies - eg bonding, soldering or laser welding - can be used.
Ein weiterer Vorteil der Erfindung besteht darin, dass die elektrische Verbindung des ersten Teils mit dem Anschlusskontakt vor der weiteren Montage getestet werden kann.Another advantage of the invention is that the electrical connection of the first part to the connection contact can be tested before further assembly.
Durch die Anordnung des zweiten Teils der stromführende Lasche im wesentlichen parallel zur Ebene der Schaltungseinhei- ten ist eine sehr raumsparende, kompakte Ausgestaltung des Leistungsmoduls erreicht.A very space-saving, compact design of the power module is achieved by arranging the second part of the current-carrying tab essentially parallel to the level of the circuit units.
Eine herstellungstechnisch bevorzugte Ausgestaltung des erfindungsgemäßen Verfahrens sieht vor, dass mehrere Schal- tungseinheiten zunächst jeweils mit dem ersten Teil ihrer stromführenden Lasche verbunden werden, die Schaltungseinheiten auf einem gemeinsamen Träger angeordnet werden und nachfolgend die jeweils ersten Teile unter Ausbildung stromführender Laschen mit einem gemeinsamen zweiten Teil verbunden werden.A production-technically preferred embodiment of the method according to the invention provides that a plurality of circuit units are first connected to the first part of their current-carrying tab, the circuit units are arranged on a common carrier and then the respective first parts with the formation of current-carrying tabs with a common second part get connected.
Die Schaltungseinheiten können z.B. durch Lötung mit einer gemeinsamen Bodenplatte verbunden werden. Sie werden dabei vorteilhafterweise durch eine Montageschablone positioniert, die während der Montage in der Ebene des zweiten Teils derThe circuit units can e.g. can be connected to a common base plate by soldering. They are advantageously positioned by means of a mounting template which, during mounting, is in the plane of the second part of the
Lasche angeordnet wird und beispielsweise Öffnungen zum Durchtritt der freien Enden der ersten Teile aufweist.Tab is arranged and, for example, has openings for the passage of the free ends of the first parts.
Die Erfindung wird nachfolgend anhand der in den Figuren ge- zeigten Ausführungsbeispiele näher erläutert. Es zeigen:
Figur 1 die Vormontage einer Schaltungseinheit in einer ers- • ten Montagereihenfolge,The invention is explained in more detail below on the basis of the exemplary embodiments shown in the figures. Show it: FIG. 1 shows the pre-assembly of a circuit unit in a first • assembly sequence,
Figur 2 die Vormontage einer Schaltungseinheit in einer va- riierten Montagereihenfolge,FIG. 2 shows the pre-assembly of a circuit unit in a varied assembly sequence,
Figur 3 die Montage mehrerer Schaltungseinheiten unter Bildung eines erfindungsgemäßen Leistungsmoduls,FIG. 3 shows the assembly of several circuit units to form a power module according to the invention,
Figur 4 ein Schaltbild mit zwei identisch aufgebaute Halbbrücken, die zur Parallelschaltung in einem erfindungsgemäßen Leistungsmodul vorgesehen sind,FIG. 4 shows a circuit diagram with two identically constructed half bridges, which are provided for parallel connection in a power module according to the invention,
Figur 5 ein Schaltbild eines Halbbrückenmoduls mit drei i- dentisch aufgebauten, elektrisch zueinander parallel geschalteter Halbbrücken,FIG. 5 shows a circuit diagram of a half-bridge module with three identically constructed half-bridges that are electrically connected in parallel with one another,
Figur 6 eine perspektivische Ansicht eines als Halbbrückenmodul ausgebildeten Leistungsmoduls mit mehreren mittels stromführender Laschen elektrisch parallel geschalteten Schaltungseinheiten bei abgenommenem Gehäuse,FIG. 6 shows a perspective view of a power module designed as a half-bridge module with a plurality of circuit units electrically connected in parallel by means of current-carrying tabs, with the housing removed,
Figur 7 eine Seitenansicht eines Querschnitts durch das Halbbrückenmodul gemäß Figur 6.FIG. 7 shows a side view of a cross section through the half-bridge module according to FIG. 6.
Die in Figur 1 in drei Montageschritten a) , b) , c) gezeigte Vormontage einer Schaltungseinheit beginnt mit dem Aufbringen eines Leistungsbauelements 1, z.B. eines Leistungshalbleiters, auf eine Leiterbahn 2 eines Substrats 3 bevorzugt durch Löten (Montageschritt a) ) . Auf dem Substrat sind. weitere Leiterbahnen oder Anschlusskontakte 4, 5, 6 vorgesehen. In einem nachfolgenden Montageschritt b) wird der Leistungshalbleiter 1 mittels Bonddrähten 7, 8 kontaktiert.The preassembly of a circuit unit shown in FIG. 1 in three assembly steps a), b), c) begins with the application of a power component 1, e.g. a power semiconductor, onto a conductor track 2 of a substrate 3, preferably by soldering (assembly step a)). Are on the substrate. additional conductor tracks or connecting contacts 4, 5, 6 are provided. In a subsequent assembly step b), the power semiconductor 1 is contacted by means of bonding wires 7, 8.
Die Anschlusskontakte 4, 5 werden anschließend (Montageschritt c) ) mit dem Fuß 10, 11 jeweils eines ersten Teils 12,
14 elektrisch durch Lötung, Laser- oder Ultraschallschweißen verbunden. Die Teile 12, 14 sind L-förmig gestaltet und ragen mit dem freien Endbereich des L (Halsbereich) 16, 17 im wesentlichen senkrecht zur Ebene 18 der Schaltungseinheit nach oben. Die Verbindung der ersten Teile 12, 14 erfolgt vor der weiteren Montage und unabhängig von weiteren Teilen 25, 27 (Figur 3), die zusammen mit den Teilen 12, 14 je eine stromführende Lasche bilden werden. Die Verbindung der Teile 12, 14 mit den Anschlusskontakten 4, 5 kann in diesem Stadium vorgetestet werden, was eine erhebliche Erhöhung der Fertigungsgüte und Zuverlässigkeit ermöglicht.The connection contacts 4, 5 are then (assembly step c)) with the foot 10, 11 of a first part 12, 14 electrically connected by soldering, laser or ultrasonic welding. The parts 12, 14 are L-shaped and project upward with the free end region of the L (neck region) 16, 17 essentially perpendicular to the plane 18 of the circuit unit. The connection of the first parts 12, 14 takes place before further assembly and independently of further parts 25, 27 (FIG. 3), which together with the parts 12, 14 will each form a current-carrying tab. The connection of the parts 12, 14 to the connection contacts 4, 5 can be pretested at this stage, which enables a considerable increase in the quality of production and reliability.
Figur 2 zeigt ein weiteres Ausführungsbeispiel der Vormontage bei der Herstellung eines erfindungsgemäßen Leistungsmoduls in drei Montageschritten a") , b") , c" ) , wobei gleiche Elemente mit denselben Bezugszeichen wie in Figur 1 bezeichnet sind. Hier werden zunächst die Teile 12, 14 z.B. durch Laserschweißen mit den Anschlusskontakten 4, 5 auf dem Substrat 3 verbunden. Erst danach wird der Leistungshalbleiter 1 auf dem Substrat 3 platziert und durch Löten und über Bonddrähte 7, 8 kontaktiert. Dies hat den Vorteil, dass der Leistungshalbleiter 1 durch das Laserschweißen der Teile 12, 14 nicht beeinträchtigt werden kann und der Bewegungsraum für das Laserschweißen nicht eingeschränkt ist.2 shows a further exemplary embodiment of the pre-assembly in the production of a power module according to the invention in three assembly steps a "), b"), c "), the same elements being designated with the same reference numerals as in Figure 1. Here, the parts 12, 14 are first For example, connected by laser welding to the connection contacts 4, 5 on the substrate 3. Only then is the power semiconductor 1 placed on the substrate 3 and contacted by soldering and via bonding wires 7, 8. This has the advantage that the power semiconductor 1 is produced by laser welding Parts 12, 14 can not be affected and the range of motion for laser welding is not limited.
Figur 3 zeigt zwei gemäß Figur 1 oder 2 vormontierte Schaltungseinheiten 20, 21. Diese sind auf einer gemeinsamen Bodenplatte 24 angeordnet. Die freien Endbereiche 16, 16" der jeweiligen ersten Teile 12, 12" sind mit einem zweiten Teil 25 unter Ausbildung einer stromführenden Lasche 26 - z.B. durch Einpressen, Verpressen, Quetschen, Bonden, Crimpen, Nieten, Löten, insbesondere Induktiv-Hartlöten, Schweißen, insbesondere Kalt-, Ultraschall-, Laser-, Induktiv- oder Widerstandsschweißen, - verbunden. Gleichermaßen sind die frei- en Endbereiche 17, 17" der jeweiligen ersten Teile 14, 14' mit einem zweiten Teil 27 unter Ausbildung einer stromführenden Lasche 28 verbunden.
Die Teile 12, 12" bzw. 14, 14" und 25, 27 ergänzen sich also - nach ihrer separaten Montage - jeweils zu einer stromführende Lasche 26, 28, die die entsprechenden Anschlusskontakte (z.B. 5 und 5") der Schaltungseinheiten 20 und 21 parallel schaltet. Die zweiten Teile 25 und 27 sind zueinander beabstandet parallel oder auch planparallel angeordnet. Das so gebildete Modul kann in an sich bekannter Weise in ein Gehäuse eingebracht und ggf. vergossen werden.FIG. 3 shows two circuit units 20, 21 preassembled according to FIG. 1 or 2. These are arranged on a common base plate 24. The free end regions 16, 16 "of the respective first parts 12, 12" are provided with a second part 25 to form a current-carrying tab 26 - for example by pressing, pressing, squeezing, bonding, crimping, riveting, soldering, in particular inductive brazing, welding , especially cold, ultrasonic, laser, inductive or resistance welding, - connected. Likewise, the free end regions 17, 17 ″ of the respective first parts 14, 14 ′ are connected to a second part 27 to form a current-carrying tab 28. The parts 12, 12 "or 14, 14" and 25, 27 thus complement each other - after their separate assembly - to form a current-carrying tab 26, 28 which has the corresponding connection contacts (for example 5 and 5 ") of the circuit units 20 and 21 The second parts 25 and 27 are spaced apart from one another in parallel or plane-parallel, and the module formed in this way can be introduced into a housing in a manner known per se and, if necessary, cast.
Bei der Montage der Schaltungseinheiten 20, 21 auf der gemeinsamen Bodenplatte 24 kann zur präzisen Positionierung zunächst eine MontageSchablone verwendet werden, die Öffnungen genau dort aufweist, wo später die Endbereiche 16, 16"; 17, 17" der ersten Teile angeordnet sein und den zweiten Teil durchdringen sollen. Damit werden die Schaltungseinheiten schablonengemäß ausgerichtet.When assembling the circuit units 20, 21 on the common base plate 24, a mounting template can be used for precise positioning, which has openings exactly where later the end regions 16, 16 "; 17, 17" of the first parts and the second are arranged To penetrate part. The circuit units are thus aligned according to the template.
Die Montage des erfindungsgemäßen Moduls ist somit wesentlich vereinfacht. Durch die frühzeitige Testmöglichkeit der Verbindung zwischen den ersten Teilen 12, 14 und den zugeordneten Anschlusskontakten ist die Qualitätssicherung verbessert. Die Ausgestaltung der stromführende Lasche erlaubt eine sehr kompakte und platzsparende Bauweise des Moduls.The assembly of the module according to the invention is thus considerably simplified. The quality assurance is improved by the possibility of early testing of the connection between the first parts 12, 14 and the assigned connection contacts. The design of the current-carrying tab allows a very compact and space-saving construction of the module.
Gemäß einer bevorzugten Ausführungsform der Erfindung ist ein erfindungsgemäßes Leistungsmodul als Halbbrücken-Modul ausgebildet. Ein derartiges Halbbrücken-Modul umfasst vorzugsweise mehrere Halbbrücken, die jeweils auf einem Substrat angeord- net sind. Jede Halbbrücke bildet eine Schaltungseinheit.According to a preferred embodiment of the invention, a power module according to the invention is designed as a half-bridge module. Such a half-bridge module preferably comprises a plurality of half-bridges, which are each arranged on a substrate. Each half bridge forms a circuit unit.
Ein Schaltbild mit zwei derartigen Schaltungseinheiten 31, 32 zeigt Figur 4. Jede der Schaltungseinheiten 31, 32 umfasst zwei Leistungshalbleiter 1, 1", die mit ihren Laststrecken in Reihe geschaltet sind. Die Leistungshalbleiter 1, 1" können beispielsweise als Transistoren, Thyristoren, Triacs, FETs, MOSFETs oder IGBTs ausgebildet sein. Des Weiteren ist antipa-
rallel zu jeder Laststrecke eines Leistungshalbleiters 1, 1' eine Freilaufdiode 9, 9" geschaltet.FIG. 4 shows a circuit diagram with two such circuit units 31, 32. Each of the circuit units 31, 32 comprises two power semiconductors 1, 1 ", which are connected in series with their load paths. The power semiconductors 1, 1" can be used, for example, as transistors, thyristors, triacs , FETs, MOSFETs or IGBTs. Furthermore, antipa- A free-wheeling diode 9, 9 "is connected in parallel with each load path of a power semiconductor 1, 1 '.
Jede der Schaltungseinheiten 31, 32 ist auf einem Substrat realisiert. Die Leistungshalbleiter 1, 1' sowie die Freilauf- dioden 9, 9" einer Schaltungseinheit 31, 32 sind in der Ebene des jeweiligen Substrates mittels Leiterbahnen miteinander sowie mit Anschlusskontakten verbunden. Jede dieser Leiterbahnen weist eine Induktivität auf. In Figur 4 sind den In- duktivitäten der Leiterbahnen entsprechende Ersat Induktivitäten Ll bis L5 dargestellt.Each of the circuit units 31, 32 is implemented on a substrate. The power semiconductors 1, 1 ′ and the free-wheeling diodes 9, 9 ″ of a circuit unit 31, 32 are connected to one another in the plane of the respective substrate by means of conductor tracks and to connection contacts. Each of these conductor tracks has an inductance. corresponding to inductivities L1 to L5.
Zur Erhöhung der Schaltleistung eines erfindungsgemäßen Leistungsmoduls können zwei oder mehr Schaltungseinheiten 31, 32 parallel geschaltet werden. Dazu werden einander entsprechende Anschlusskontakte 4, 5, 6 der Schaltungseinheiten 31, 32 elektrisch leitend miteinander verbunden. Im Falle der Anschlusskontakte 6 und 4 für die negative bzw. positive Versorgungsspannung sowie 5 für den Phasenausgang wird hierzu vorzugsweise jeweils eine mehrteilige stromführende Lasche entsprechend den stromführenden Laschen 26, 28 gemäß Figur 3 verwendet .To increase the switching capacity of a power module according to the invention, two or more circuit units 31, 32 can be connected in parallel. For this purpose, corresponding connection contacts 4, 5, 6 of the circuit units 31, 32 are connected to one another in an electrically conductive manner. In the case of connection contacts 6 and 4 for the negative or positive supply voltage and 5 for the phase output, a multi-part current-carrying tab corresponding to the current-carrying tabs 26, 28 according to FIG. 3 is preferably used for this purpose.
Hierzu weist jede der Schaltungseinheiten 31, 32 erste Teile 121, 131, 141 auf, die mit den Anschlusskontakten für die negative Versorgungsspannung, den Phasenausgang bzw. die positive Versorgungsspannung verbunden sind. Die ersten Teile 121, 131, 141 sind vorzugsweise entsprechend den ersten Teilen 12, 12', 14, 14' gemäß den Figuren 1 bis 3 ausgebildet.For this purpose, each of the circuit units 31, 32 has first parts 121, 131, 141 which are connected to the connection contacts for the negative supply voltage, the phase output or the positive supply voltage. The first parts 121, 131, 141 are preferably designed corresponding to the first parts 12, 12 ', 14, 14' according to FIGS. 1 to 3.
Jeder der ersten Teile 121, 131, 141 weist eine Induktivität auf, die in Figur 4 durch Ersatzinduktivitäten L6, L8, L7 präsentiert ist. Die Induktivitäten L6, L8, L7 der ersten Teile 121, 131, 141 betragen vorzugsweise zwischen 5 nH und 100 nH, besonders bevorzugt etwa 20 nH, während im Vergleich dazu die Induktivitäten Ll bis L5 mit vorzugsweise jeweils weniger als 5 nH deutlich geringer auffällt.
Figur 5 zeigt eine Anzahl von Schaltungseinheiten 31, 32, 33, die bevorzugt einen Aufbau gemäß den Schaltungseinheiten 31, 32 gemäß Figur 4 aufweisen und identisch ausgebildet sind. Die einander entsprechenden ersten Teile der Schaltungseinheiten 31, 32, 33 sind elektrisch leitend mittels zweiter Teile 29, 27, 25 verbunden. Die einander entsprechenden ersten Teile der Schaltungseinheiten 31, 32, 33 bilden zusammen mit dem sie verbindenden zweiten Teil 29, 27, bzw. 25 jeweils eine stromführende Lasche.Each of the first parts 121, 131, 141 has an inductance, which is represented in FIG. 4 by substitute inductances L6, L8, L7. The inductances L6, L8, L7 of the first parts 121, 131, 141 are preferably between 5 nH and 100 nH, particularly preferably about 20 nH, while in comparison the inductances L 1 to L5, each preferably less than 5 nH, are significantly less noticeable. FIG. 5 shows a number of circuit units 31, 32, 33, which preferably have a structure according to the circuit units 31, 32 according to FIG. 4 and are of identical design. The corresponding first parts of the circuit units 31, 32, 33 are electrically conductively connected by means of second parts 29, 27, 25. The corresponding first parts of the circuit units 31, 32, 33 together with the connecting second part 29, 27 and 25 each form a current-carrying tab.
Dabei weisen die die ersten Teile zweier benachbarter Schaltungseinheiten 31, 32, 33 verbindenden zugehörigen zweiten Teile 29, 27 bzw. 25 Abschnitte 290, 270, 250 mit Induktivi- täten auf, die in Figur 5 als Ersatzinduktivitäten L9, L10 bzw. Lll dargestellt sind. Der Wert dieser Ersatzinduktivitäten L9, L10, Lll ist bevorzugt kleiner als 10 nH, besonders bevorzugt kleiner als 5 nH.The associated second parts 29, 27 and 25, respectively, connecting the first parts of two adjacent circuit units 31, 32, 33 have sections 290, 270, 250 with inductors, which are shown in FIG. 5 as substitute inductors L9, L10 and Lll , The value of these substitute inductances L9, L10, Lll is preferably less than 10 nH, particularly preferably less than 5 nH.
Figur 6a zeigt eine perspektivische Ansicht eines Leistungsmoduls 40 mit sechs Schaltungseinheiten 20, die jeweils eine Halbbrücke aufweisen und die ein Substrat sowie Leistungselemente' und Leiterbahnen 2 umfassen. Die Schaltungseinheiten 20 sind auf einer Bodenplatte 24 angeordnet und mittels erfin- dungsgemäßer stromführender Laschen 25, 27, 29 elektrisch parallel geschaltet. Die Schaltungseinheiten 20 sind vorzugsweise identisch aufgebaut, in einer Verbindungsrichtung r aufeinanderfolgend und äquidistant voneinander beabstandet angeordnet. Die Anordnung der Substrate 3 kann in vorteilhaf- ter Weise gemäß den Ausführungen in der deutschen Patentanmeldung DE 10 2004 042 367 erfolgen.6a shows a perspective view of a power module 40 with six circuit units 20, each having a half-bridge, and comprising a substrate and power elements' and conductor tracks. 2 The circuit units 20 are arranged on a base plate 24 and electrically connected in parallel by means of current-carrying tabs 25, 27, 29 according to the invention. The circuit units 20 are preferably constructed identically, arranged in a connection direction r in succession and equidistant from one another. The substrates 3 can advantageously be arranged in accordance with the statements in the German patent application DE 10 2004 042 367.
Gemäß einer bevorzugten Ausführungsform der Erfindung umfasst jede der Schaltungseinheiten 20 eine Halbbrücke entsprechend den Halbbrücken 31, 32, 33 gemäß den Figuren 4 und 5.
Jede der Schaltungseinheiten 20 weist erste Teile 121 für den Anschluss der negativen VersorgungsSpannung, 141 für den An- schluss der positiven VersorgungsSpannung, sowie 131 für den Phasenausgang auf. Die mittels eines zweiten Teils 25, 27, 29 miteinander verbundenen erste Teile 131, 141 bzw. 121 sind vorzugsweise in Verbindungsrichtung r in einer Reihe hintereinander angeordnet. Gemäß einer besonders bevorzugten Ausführungsform der Erfindung sind die ersten Teile 121, 141 für die Zuführung der negativen bzw. positiven Versorgungsspan- nung in Verbindungsrichtung r in einer Reihe und mit abwechselnder Polarität aufeinanderfolgend angeordnet .According to a preferred embodiment of the invention, each of the circuit units 20 comprises a half bridge corresponding to the half bridges 31, 32, 33 according to FIGS. 4 and 5. Each of the circuit units 20 has first parts 121 for connecting the negative supply voltage, 141 for connecting the positive supply voltage, and 131 for the phase output. The first parts 131, 141 and 121, which are connected to one another by means of a second part 25, 27, 29, are preferably arranged in a row one behind the other in the connecting direction r. According to a particularly preferred embodiment of the invention, the first parts 121, 141 for supplying the negative or positive supply voltage in the connection direction r are arranged in a row and with alternating polarity in succession.
Die zweiten Teile 25, 27, 29 sind bevorzugt im Wesentlichen flächig ausgebildet und parallel zur Ebene der Schaltungsein- heiten 25 und der Bodenplatte 24 angeordnet.The second parts 25, 27, 29 are preferably essentially flat and are arranged parallel to the plane of the circuit units 25 and the base plate 24.
Optional weisen die zweiten Teile 25, 27, 29 Anschlussfahnen 251, 271 bzw. 291 auf, die vorzugsweise einstückig mit den jeweiligen zweiten Teilen 25, 27, 29 ausgebildet sind. Die Anschlussfahnen 251, 271, 291 können so auf einfache Weise unter Verwendung eines Stanzwerkzeuges aus einem flachen Blech gestanzt und in die gewünschte Form gebogen werden. Die Ansσhlussfahnen 251, 271, 291 sind vorzugsweise auf der der Bodenplatte 24 abgewandten Seite des betreffenden zweiten Teils 25, 29, 27 angeordnet. Gemäß einer bevorzugten Ausführungsform sind jeweils zwei Anschlussfahnen 251, 271, 291 gleichen elektrischen Potentials in einer Richtung quer zur Verbindungsrichtung r paarweise und einander gegenüberliegend angeordnet. Dabei ist es vorteilhaft, wenn die Anschlussfah- nen 271, 291 mit unterschiedlicher Polarität +/- in Verbindungsrichtung r abwechselnd aufeinanderfolgend angeordnet sind.Optionally, the second parts 25, 27, 29 have connecting lugs 251, 271 and 291, which are preferably formed in one piece with the respective second parts 25, 27, 29. The connecting lugs 251, 271, 291 can thus be punched out of a flat sheet metal in a simple manner using a punching tool and bent into the desired shape. The connection tabs 251, 271, 291 are preferably arranged on the side of the relevant second part 25, 29, 27 facing away from the base plate 24. According to a preferred embodiment, two connection lugs 251, 271, 291 of the same electrical potential are arranged in pairs and opposite one another in a direction transverse to the connection direction r. It is advantageous if the connection lugs 271, 291 with different polarity +/- are arranged alternately in succession in the connection direction r.
Die ersten Teile weisen Füße 122, 142 sowie Füße 132 (siehe Figur 6b) auf, die mit entsprechenden Anschlusskontakten 6, 4 bzw. 5 (siehe Figur 6b) verbunden sind. Die Anordnung der Fü-
ße untereinander kann in vorteilhafter Weise entsprechend den Ausführungen in der DE 10 2004 027 185 erfolgen.The first parts have feet 122, 142 and feet 132 (see FIG. 6b) which are connected to corresponding connection contacts 6, 4 and 5 (see FIG. 6b). The arrangement of the esse can be carried out in an advantageous manner according to the statements in DE 10 2004 027 185.
Um eine höhere Stromtragfähigkeit zu erreichen, sind die An- schlussfahnen 251 für den Anschluss des Phasenausgangs bevorzugt für eine höhere Stromtragfähigkeit ausgelegt als die Anschlussfahnen 271, 291 für die positive bzw. negative VersorgungsSpannung. Dies kann insbesondere dadurch erreicht werden, dass die Abmessungen der Anschlussfahnen 251 in der Ver- bindungsrichtung r für den Phasenausgang größer gewählt sind, als die Abmessungen der Anschlussfahnen 271, 291 für den Anschluss der positiven bzw. negativen VersorgungsSpannung.In order to achieve a higher current carrying capacity, the connection lugs 251 for connecting the phase output are preferably designed for a higher current carrying capacity than the connection lugs 271, 291 for the positive or negative supply voltage. This can be achieved in particular in that the dimensions of the connection lugs 251 in the connection direction r for the phase output are chosen larger than the dimensions of the connection lugs 271, 291 for the connection of the positive or negative supply voltage.
Gemäß einer weiteren bevorzugten Ausführungsform der Erfin- düng weist das Halbbrückenmodul in Verbindungsrichtung r einen Abschnitt 45 auf, in dem keiner der zweiten Teile 25, 27, 29 mit Anschlussfahnen 251, 271 bzw. 291 versehen ist. Hierdurch wird oberhalb der zweiten Teile 25, 27, 29 ein Bereich geschaffen, der frei von elektrischen Hauptanschlüssen ist und zum Beispiel zur Aufnahme von Ansteuerschaltungen oder Sensoren verwendet werden kann.According to a further preferred embodiment of the invention, the half-bridge module has a section 45 in the connection direction r in which none of the second parts 25, 27, 29 is provided with connecting lugs 251, 271 or 291. As a result, an area is created above the second parts 25, 27, 29, which is free of main electrical connections and can be used, for example, to accommodate control circuits or sensors.
Figur 6b zeigt eine Ansicht entsprechend Figur 6a, jedoch mit einem um 180° gedrehten Leistungsmodul 40. Diese Ansicht lässt die ersten Teile 131 erkennen, die mit Anschlusskontakten 5 zum Anschluss der Phasenausgänge verbunden sind. Die ersten Teile 131 sind den ersten Teilen 121, 141 in einer Richtung quer zur Verbindungsrichtung r gegenüberliegend angeordnet .FIG. 6b shows a view corresponding to FIG. 6a, but with a power module 40 rotated by 180 °. This view reveals the first parts 131, which are connected to connection contacts 5 for connecting the phase outputs. The first parts 131 are arranged opposite the first parts 121, 141 in a direction transverse to the connection direction r.
In Figur 7 ist eine Seitenansicht eines Querschnitts durch ein Leistungsmodul 40 dargestellt, das dem Leistungsmodul 40 gemäß den Figuren 6a und 6b entspricht, darüber hinaus jedoch ein Gehäuse aufweist. Der Querschnitt verläuft quer zur Ver- bindungsrichtung r zwischen einer Anschlusslasche 271 und einer dazu benachbarten Anschlusslasche 291 mit Blick auf die Anschlusslasche 271 entgegen der Verbindungsrichtung r.
Das Gehäuse 40 umfasst einen Gehäusekorper 41 sowie die Bodenplatte 24. Mit der Bodenplatte 24 ist ein Substrat verbunden, das eine Schaltungseinheit 20 umfasst. Die Schaltungs- einheit 20 weist neben den nicht näher dargestellten Leistungshalbleitern Leiterbahnen 2 auf.FIG. 7 shows a side view of a cross section through a power module 40, which corresponds to the power module 40 according to FIGS. 6a and 6b, but also has a housing. The cross section runs transversely to the connection direction r between a connection plate 271 and an adjacent connection plate 291 with a view of the connection plate 271 against the connection direction r. The housing 40 comprises a housing body 41 and the base plate 24. A substrate is connected to the base plate 24, which comprises a circuit unit 20. The circuit unit 20 has conductor tracks 2 in addition to the power semiconductors (not shown).
Ein erster Teil 121 verbindet die Schaltungseinheit 20 mit einem zweiten Teil 27. Entsprechend verbindet ein weiterer erster Teil 131 die Schaltungseinheit 20 mit einem zweiten Teil 25.A first part 121 connects the circuit unit 20 to a second part 27. Accordingly, a further first part 131 connects the circuit unit 20 to a second part 25.
Insgesamt umfasst die Anordnung drei zweite Teile 25, 27, 29, die parallel zueinander geführt und mittels Isolierfolien 51, 52 elektrisch voneinander isoliert sind. Gemäß den Figuren 6a und 6b weisen die zweiten Teile 25, 27, 29 Anschlussfahnen 251, 271, 291 auf, von denen in Figur 7 lediglich Anschlussfahnen 271 erkennbar sind. Die Anschlussfahnen 271 wie auch die nicht erkennbaren Anschlussfahnen 251, 291 sind durch Öffnungen 44 aus dem Gehäusekörper 41 herausgeführt. Bei der Montage des Leistungsmoduls können die Anschlussfahnen zunächst durch die Öffnungen 44 gesteckt und anschließend in ihre endgültige Position umgebogen werden.Overall, the arrangement comprises three second parts 25, 27, 29, which are guided parallel to one another and are electrically insulated from one another by means of insulating foils 51, 52. According to FIGS. 6a and 6b, the second parts 25, 27, 29 have connection lugs 251, 271, 291, of which only connection lugs 271 can be seen in FIG. The connecting lugs 271 as well as the non-recognizable connecting lugs 251, 291 are led out of the housing body 41 through openings 44. When installing the power module, the connection lugs can first be inserted through the openings 44 and then bent into their final position.
Jeder der zweiten Teile 25, 27, 29 weist einen durchgehenden, vorzugsweise unteren Abschnitt 252, 272, 292 auf, der zu den miteinander zu verbindenden Schaltungseinheiten 20 beabstandet ist. Die durchgehenden Abschnitte 252, 272, 292 sind dazu vorgesehen, einander entsprechende erste Teile der elektrisch parallel miteinander zu verschaltenden Schaltungseinheiten 20 zu verbinden, und erstrecken sich vorzugsweise in der Verbindungsrichtung r von der ersten bis zur letzten der Schaltungseinheiten 20. Dabei verlaufen die durchgehenden Abschnitte 252, 272, 292 bevorzugt planparallel zueinander so- wie planparallel zur Ebene der Bodenplatte 24. Des Weiteren sind die durchgehenden Abschnitte 252, 272, 292 der zweiten
Teile 25, 27, 29 innerhalb des Gehäuses, besonders bevorzugt innerhalb des Gehäusekörpers 41, angeordnet.Each of the second parts 25, 27, 29 has a continuous, preferably lower section 252, 272, 292, which is spaced apart from the circuit units 20 to be connected to one another. The continuous sections 252, 272, 292 are provided to connect corresponding first parts of the circuit units 20 to be electrically connected in parallel, and preferably extend in the connection direction r from the first to the last of the circuit units 20. The continuous sections run here 252, 272, 292 are preferably plane-parallel to one another and plane-parallel to the plane of the base plate 24. Furthermore, the continuous sections 252, 272, 292 are the second Parts 25, 27, 29 are arranged inside the housing, particularly preferably inside the housing body 41.
Optional kann das Gehäuse mittels einer Vergussmasse vergos- sen werden, die sich bevorzugt ausgehend von der Bodenplatte 24 bis über den durchgehenden Abschnitt 252 der am weitesten von der Bodenplatte 24 beabstandeten zweiten Teil 25 hinaus erstreckt. Die durchgehenden Abschnitte 252, 272, 292 sind damit von der Vergussmasse umschlossen. Dabei ragen die An- schlussfahnen der zweiten Teile aus der Vergussmasse heraus.
Optionally, the housing can be encapsulated by means of a casting compound, which preferably extends from the base plate 24 to beyond the continuous section 252 of the second part 25 which is the most distant from the base plate 24. The continuous sections 252, 272, 292 are thus enclosed by the potting compound. The connecting lugs of the second parts protrude from the sealing compound.
BezugszeichenlisteLIST OF REFERENCE NUMBERS
a) , b) , c) Montageschritt a') , b') , c") Montageschritta), b), c) assembly step a '), b'), c ") assembly step
1, 1' Leistungshalbleiter1, 1 ' power semiconductor
2 Leiterbahn2 conductor tracks
3 Substrat3 substrate
4, 5, 5', 6 Anschlusskontakt4, 5, 5 ', 6 connection contact
7, 8 Bonddrähte7, 8 bond wires
9, 9" Freilaufdiode9, 9 "freewheeling diode
10, 11 Fuß10, 11 feet
12, 12' erster Teil12, 12 'first part
14, 14' erster Teil14, 14 'first part
16, 16' Endbereich16, 16 'end region
17, 17' Endbereich17, 17 'end region
18 Ebene18 level
20, 21 Schaltungseinheiten20, 21 circuit units
24 Bodenplatte24 base plate
25 zweiter Teil (Phasenausgang)25 second part (phase output)
26 stromführende Lasche26 current-carrying tab
27 zweiter Teil (pos. Versorgungsspannung)27 second part (positive supply voltage)
28 stromführende Lasche28 current-carrying tab
29 zweiter Teil (neg. Versorgungsspannung)29 second part (neg. Supply voltage)
31, 32, 33 Schaltungseinheit31, 32, 33 circuit unit
40 Leistungsmodul40 power module
41 Gehäusekörper41 housing body
44 Öffnung44 opening
45 Abschnitt des Leistungsmoduls45 Section of the power module
51, 52 Isolierfolie51, 52 insulating film
121 erster Teil (neg. VersorgungsSpannung)121 first part (neg. Supply voltage)
122 Fuß122 feet
131 erster Teil (Phasenausgang)131 first part (phase output)
122 Fuß122 feet
141 erster Teil (pos. Versorgungsspannung)141 first part (positive supply voltage)
142 Fuß142 feet
250 Abschnitt des zweiten Teils
251 Anschlussfahne (Phasenausgang)250 section of the second part 251 connection lug (phase output)
252 durchgehender Abschnitt252 continuous section
270 Abschnitt des zweiten Teils270 section of the second part
271 Anschlussfahne (pos. VersorgungsSpannung) 272 durchgehender Abschnitt271 Connection lug (positive supply voltage) 272 continuous section
290 Abschnitt des zweiten Teils290 Section of Part Two
291 Anschlussfahne (neg. VersorgungsSpannung)291 connection lug (neg. Supply voltage)
292 durchgehender Abschnitt L1...L11 E satzinduktivität r Verbindungsrichtung
292 continuous section L1 ... L11 E set inductance r connection direction
Claims
1. Leistungsmodul mit mehreren parallel verschalteten Schaltungseinheiten (20, 21) und einer stromführenden Lasche (26), wobei jede Schaltungseinheit (20, 21) einen zu kontaktierenden Anschlusskontakt (5, 5') aufweist, der über die stromführende Lasche (26) elektrisch parallel mit dem entsprechenden Anschlusskontakt (5') einer anderen Schaltungseinheit (20') verbunden ist, dadurch gekennzeichnet, dass die Lasche (26) mehrere separate Anschlusselemente (12, 12') sowie ein Verbindungselement (25) aufweist, jedes Anschlusselement (12) dem Anschlusskontakt (5) nur einer einzigen der Schaltungseinheiten (20, 21) zugeordnet ist, jedes Anschlusselement (12, 12') unabhängig von dem Verbindungselement (25) und den weiteren Anschlusselementen (12') des Leistungsmoduls (40) mit dem ihm zugeordneten Anschlusskontakt (5, 5') fest verbindbar ist, und das Verbindungselement (25) durch Verbindung mit dem separaten Anschlusselementen (5, 5') die Parallelschaltung der Schaltungseinheiten (20) bewirkt.1. Power module with a plurality of circuit units (20, 21) connected in parallel and a current-carrying tab (26), each circuit unit (20, 21) having a connection contact (5, 5 ') to be contacted, which is electrical via the current-carrying tab (26) is connected in parallel to the corresponding connection contact (5 ') of another circuit unit (20'), characterized in that the tab (26) has a plurality of separate connection elements (12, 12 ') and a connection element (25), each connection element (12) the connection contact (5) is assigned to only one of the circuit units (20, 21), each connection element (12, 12 ') independently of the connection element (25) and the further connection elements (12') of the power module (40) with that assigned to it Connection contact (5, 5 ') can be firmly connected, and the connecting element (25) effects the parallel connection of the circuit units (20) by connection to the separate connecting elements (5, 5') t.
2. Leistungsmodul nach Anspruch 1, dadurch gekennzeichnet, dass wenigstens eines der Anschlusselemente (12, 12') L-fόrmig ausgebildet ist.2. Power module according to claim 1, characterized in that at least one of the connection elements (12, 12 ') is L-shaped.
3. Leistungsmodul nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass wenigstens eines der Anschlusselemente (12) einen Fußbereich (10) aufweist, der mit dem Anschlusskontakt (5) der Schaltungseinheit verbunden ist.3. Power module according to claim 1 or 2, characterized in that at least one of the connection elements (12) has a foot region (10) which is connected to the connection contact (5) of the circuit unit.
4. Leistungsmodul nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass wenigstens eines der Anschlusselemente (12, 12') mit einem Anschlusskontakt (5, 5') einer Schaltungseinheit (20, 21) durch Bonden, Löten oder Laserschweißen verbunden ist.4. Power module according to one of the preceding claims, characterized in that at least one of the connection elements (12, 12 ') is connected to a connection contact (5, 5') of a circuit unit (20, 21) by bonding, soldering or laser welding.
5. Leistungsmodul nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass das Verbindungselement (25, 27, 29) einen durchgehenden Abschnitt (252, 272, 292) aufweist, der die separaten Anschlusselemente (12) elektrisch miteinander verbindet.5. Power module according to one of the preceding claims, characterized in that the connecting element (25, 27, 29) has a continuous section (252, 272, 292) which electrically connects the separate connection elements (12) to one another.
6. Leistungsmodul nach Anspruch 5, gekennzeichnet durch ein Gehäuse (40), wobei der durchgehende Abschnitt (252, 272, 292) des Verbindungselementes (25, 27, 29) innerhalb des Ge- häuses (40) angeordnet ist.6. Power module according to claim 5, characterized by a housing (40), wherein the continuous section (252, 272, 292) of the connecting element (25, 27, 29) is arranged within the housing (40).
7. Leistungsmodul nach Anspruch 5 oder 6, dadurch ge ennzeichnet, dass der durchgehende Abschnitt (252, 272, 292) auf der dem ge- meinsamen Träger (24) zugewandten Seite des Verbindungselements (25, 27, 29) angeordnet ist.7. Power module according to claim 5 or 6, characterized in that the continuous section (252, 272, 292) is arranged on the side of the connecting element (25, 27, 29) facing the common carrier (24).
8. Verfahren zum Verbinden von mindestens zwei Schaltungseinheiten (20, 21) eines Leistungsmoduls, - bei dem jede Schaltungseinheit (20, 21) einen Anschlusskontakt (5, 5') aufweist, der mit einem Anschlusskontakt (5', 5) einer anderen Schaltungseinheit (21, 20) zu verbinden ist, wobei zunächst jeder Anschlusskontakt (5, 5') unabhängig von den weiteren Teilen des Leistungsmoduls (40) mit einem nur der jeweiligen Schaltungseinheit (20, 21) zugeordneten separaten Anschlusselement (12, 12') elektrisch fest verbunden wird, , wobei die Schaltungseinheiten (20, 21) auf einem gemein- samen Träger (24) angeordnet werden, und wobei nachfolgend die separaten Anschlusselemente (12, 12') unter Parallelschaltung der Anschlusskontakte (5, 5") der Schaltungseinheiten (20, 21) mit einem Verbindungselement (25) verbunden werden.8. Method for connecting at least two circuit units (20, 21) of a power module, - in which each circuit unit (20, 21) has a connection contact (5, 5 ') with a connection contact (5', 5) of another circuit unit (21, 20) is to be connected, with each connection contact (5, 5 ') initially being independent of the other parts of the power module (40) with a separate connection element (12, 12') assigned only to the respective circuit unit (20, 21) is firmly connected, the circuit units (20, 21) being arranged on a common carrier (24), and the separate connection elements (12, 12 ') subsequently connected in parallel with the connection contacts (5, 5 ") the circuit units (20, 21) are connected to a connecting element (25).
9. Verfahren nach Anspruch 8 , wobei mehrere Schaltungseinheiten (20, 21) zunächst jeweils mit wenigstens einem Anschlusselement (12, 12", 14, 14') von stromführenden Laschen (26, 28) verbunden werden, und nachfolgend die jeweiligen Anschlusselemente (12, 12'; 14, 14') mittels Verbindungselementen (25, 27, 29) unter Ausbil- düng stromführender Laschen (26, 28) verbunden werden.9. The method according to claim 8, wherein a plurality of circuit units (20, 21) are first connected to at least one connection element (12, 12 ", 14, 14 ') of current-carrying tabs (26, 28), and subsequently the respective connection elements (12 , 12 '; 14, 14') are connected by means of connecting elements (25, 27, 29) with the formation of current-carrying tabs (26, 28).
10. Verfahren nach Anspruch 8 oder 9, wobei zum Anschluss einer Schaltungseinheit (20, 21) mehrere stromführende Laschen (26, 28) vorgesehen werden.10. The method according to claim 8 or 9, wherein a plurality of current-carrying tabs (26, 28) are provided for connecting a circuit unit (20, 21).
11. Verfahren nach einem der Ansprüche 8 bis 10, wobei wenigstens eines der Verbindungselemente (25, 27) der stromführende Laschen (26, 28) im wesentlichen parallel zu der Schaltungseinheit (20, 21) angeordnet wird.11. The method according to any one of claims 8 to 10, wherein at least one of the connecting elements (25, 27) of the current-carrying tabs (26, 28) is arranged substantially parallel to the circuit unit (20, 21).
12. Verfahren nach einem der Ansprüche 8 bis 11, bei dem ein durchgehender, zur elektrischen Verbindung der separaten Anschlusselemente (12) vorgesehener Abschnitt (252, 272, 292) des Verbindungselementes (25, 27, 29) auf der dem gemeinsamen Träger (24) zugewandten Seite des Verbindungselementes (25, 27, 29) angeordnet wird.12. The method according to any one of claims 8 to 11, wherein a continuous section (252, 272, 292) of the connecting element (25, 27, 29) provided for the electrical connection of the separate connection elements (12) on the common carrier (24 ) facing side of the connecting element (25, 27, 29) is arranged.
13. Verfahren nach einem der Ansprüche 8 bis 12,bei dem bei dem ein durchgehender, zur elektrischen Verbindung der sepa- raten Anschlusselemente (12) vorgesehener Abschnitt (252,13. The method according to any one of claims 8 to 12, in which a continuous section (252) provided for the electrical connection of the separate connection elements (12),
272, 292) des Verbindungselementes (25, 27, 29) in einem Gehäuse (40) des Leistungsmoduls angeordnet wird. 272, 292) of the connecting element (25, 27, 29) is arranged in a housing (40) of the power module.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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DE10352671A DE10352671A1 (en) | 2003-11-11 | 2003-11-11 | power module |
PCT/EP2004/012810 WO2005048347A2 (en) | 2003-11-11 | 2004-11-11 | Power module |
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EP1683197A2 true EP1683197A2 (en) | 2006-07-26 |
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EP (1) | EP1683197A2 (en) |
JP (1) | JP2007511083A (en) |
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DE102005039278A1 (en) * | 2005-08-19 | 2007-02-22 | Semikron Elektronik Gmbh & Co. Kg | Power semiconductor module with line element |
JP2007335632A (en) | 2006-06-15 | 2007-12-27 | Toyota Industries Corp | Semiconductor device |
DE102006057248B4 (en) * | 2006-12-05 | 2009-07-16 | Semikron Elektronik Gmbh & Co. Kg | Semiconductor module |
JP2008205058A (en) * | 2007-02-19 | 2008-09-04 | Fuji Electric Device Technology Co Ltd | Semiconductor device |
US7791208B2 (en) * | 2007-09-27 | 2010-09-07 | Infineon Technologies Ag | Power semiconductor arrangement |
JP5702988B2 (en) * | 2010-01-29 | 2015-04-15 | 株式会社 日立パワーデバイス | SEMICONDUCTOR POWER MODULE, POWER CONVERSION DEVICE MOUNTED WITH THE SEMICONDUCTOR POWER MODULE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR POWER MODULE WATER CHANNEL FORMING BODY |
JP5512377B2 (en) * | 2010-04-28 | 2014-06-04 | 本田技研工業株式会社 | Circuit board |
EP2416168B1 (en) * | 2010-07-26 | 2013-05-15 | Semikron | Test bench for power electronic blocks. |
US8563364B2 (en) | 2011-09-29 | 2013-10-22 | Infineon Technologies Ag | Method for producing a power semiconductor arrangement |
US8586420B2 (en) | 2011-09-29 | 2013-11-19 | Infineon Technologies Ag | Power semiconductor arrangement and method for producing a power semiconductor arrangement |
US9941255B2 (en) | 2014-02-11 | 2018-04-10 | Mitsubishi Electric Corporation | Power semiconductor module |
DE102014110617B4 (en) * | 2014-07-28 | 2023-05-04 | Infineon Technologies Ag | Power semiconductor module system with high insulation resistance and method for producing a power semiconductor module arrangement with high insulation resistance |
WO2016056320A1 (en) * | 2014-10-10 | 2016-04-14 | 富士電機株式会社 | Semiconductor device and bus bar |
JP6672908B2 (en) * | 2016-03-10 | 2020-03-25 | 富士電機株式会社 | Semiconductor device and method of manufacturing semiconductor device |
EP3392908B1 (en) * | 2017-04-20 | 2019-07-24 | Infineon Technologies AG | Power semiconductor assembly having a stack of connection panels with improved geometry for common electrical contacting of a plurality of identical power semiconductor switching elements |
US11056860B2 (en) | 2019-10-11 | 2021-07-06 | Eaton Intelligent Power Limited | Bus structure for parallel connected power switches |
US12009758B2 (en) * | 2020-10-01 | 2024-06-11 | Zf Friedrichshafen Ag | Half-bridge for an electric drive of an electric vehicle or a hybrid vehicle, power module for an inverter and inverter |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54161335A (en) | 1978-06-09 | 1979-12-20 | Konishiroku Photo Ind Co Ltd | Treatment of color photographic photosensitive material of silver halide |
JPS59195857A (en) | 1983-04-21 | 1984-11-07 | Fuji Electric Co Ltd | Semiconductor device |
JP2882143B2 (en) * | 1991-12-10 | 1999-04-12 | 富士電機株式会社 | Internal wiring structure of semiconductor device |
EP0584668B1 (en) * | 1992-08-26 | 1996-12-18 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG | Semi-conductor power module |
JPH0786498A (en) * | 1993-09-14 | 1995-03-31 | Matsushita Electron Corp | Intelligent power module |
DE4417405A1 (en) * | 1994-05-18 | 1995-11-23 | Inst Neue Mat Gemein Gmbh | Process for the production of structured inorganic layers |
DE19530264A1 (en) | 1995-08-17 | 1997-02-20 | Abb Management Ag | Power semiconductor module |
JPH09312357A (en) * | 1996-05-21 | 1997-12-02 | Fuji Electric Co Ltd | Semiconductor device |
JPH10200048A (en) | 1997-01-13 | 1998-07-31 | Hitachi Ltd | Power semiconductor module |
JP3349416B2 (en) | 1997-11-11 | 2002-11-25 | 株式会社三社電機製作所 | Power semiconductor device |
EP0924845A3 (en) * | 1997-12-22 | 2001-05-23 | Omnirel LLC | Power semiconductor module |
US6078501A (en) * | 1997-12-22 | 2000-06-20 | Omnirel Llc | Power semiconductor module |
US6359331B1 (en) * | 1997-12-23 | 2002-03-19 | Ford Global Technologies, Inc. | High power switching module |
JP3386360B2 (en) * | 1998-01-22 | 2003-03-17 | 株式会社三社電機製作所 | Power semiconductor module |
JP2000082772A (en) | 1998-09-04 | 2000-03-21 | Toshiba Corp | Semiconductor module connector |
US6760227B2 (en) * | 2000-11-02 | 2004-07-06 | Murata Manufacturing Co., Ltd. | Multilayer ceramic electronic component and manufacturing method thereof |
DE10103084B4 (en) * | 2001-01-24 | 2006-08-03 | Infineon Technologies Ag | Semiconductor module and method for its production |
KR100428773B1 (en) * | 2002-01-21 | 2004-04-28 | 삼성전자주식회사 | Router System and Method for Duplication of Forwarding Engine Utilizing |
JP4265463B2 (en) * | 2004-03-31 | 2009-05-20 | アンデン株式会社 | Electrical circuit device |
DE102004027185B4 (en) | 2004-06-03 | 2008-08-28 | Infineon Technologies Ag | Low-inductance semiconductor device with half-bridge configuration |
DE102004042367B4 (en) | 2004-09-01 | 2008-07-10 | Infineon Technologies Ag | The power semiconductor module |
-
2003
- 2003-11-11 DE DE10352671A patent/DE10352671A1/en not_active Ceased
-
2004
- 2004-11-11 EP EP04797835A patent/EP1683197A2/en not_active Withdrawn
- 2004-11-11 WO PCT/EP2004/012810 patent/WO2005048347A2/en not_active Application Discontinuation
- 2004-11-11 JP JP2006538800A patent/JP2007511083A/en active Pending
-
2006
- 2006-05-05 US US11/381,881 patent/US7656672B2/en active Active
Non-Patent Citations (1)
Title |
---|
See references of WO2005048347A2 * |
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US20070119820A1 (en) | 2007-05-31 |
DE10352671A1 (en) | 2005-06-23 |
WO2005048347A3 (en) | 2005-08-11 |
US7656672B2 (en) | 2010-02-02 |
WO2005048347A2 (en) | 2005-05-26 |
JP2007511083A (en) | 2007-04-26 |
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