EP1617531A4 - Halbleiterlaserbauelement - Google Patents

Halbleiterlaserbauelement

Info

Publication number
EP1617531A4
EP1617531A4 EP04729203A EP04729203A EP1617531A4 EP 1617531 A4 EP1617531 A4 EP 1617531A4 EP 04729203 A EP04729203 A EP 04729203A EP 04729203 A EP04729203 A EP 04729203A EP 1617531 A4 EP1617531 A4 EP 1617531A4
Authority
EP
European Patent Office
Prior art keywords
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP04729203A
Other languages
English (en)
French (fr)
Other versions
EP1617531A1 (de
Inventor
M Watanabe
Shoji Honda
Yasuhiro Iwamura
Gen Shimizu
Tetsuro Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Tottori Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Tottori Sanyo Electric Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Publication of EP1617531A1 publication Critical patent/EP1617531A1/de
Publication of EP1617531A4 publication Critical patent/EP1617531A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/02218Material of the housings; Filling of the housings
    • H01S5/0222Gas-filled housings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/02208Mountings; Housings characterised by the shape of the housings
    • H01S5/02212Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
EP04729203A 2003-04-24 2004-04-23 Halbleiterlaserbauelement Withdrawn EP1617531A4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003120375 2003-04-24
PCT/JP2004/005857 WO2004095663A1 (ja) 2003-04-24 2004-04-23 半導体レーザ装置

Publications (2)

Publication Number Publication Date
EP1617531A1 EP1617531A1 (de) 2006-01-18
EP1617531A4 true EP1617531A4 (de) 2006-05-17

Family

ID=33308134

Family Applications (1)

Application Number Title Priority Date Filing Date
EP04729203A Withdrawn EP1617531A4 (de) 2003-04-24 2004-04-23 Halbleiterlaserbauelement

Country Status (7)

Country Link
US (1) US20060013275A1 (de)
EP (1) EP1617531A4 (de)
JP (1) JPWO2004095663A1 (de)
KR (1) KR100785204B1 (de)
CN (1) CN1324773C (de)
TW (1) TWI236196B (de)
WO (1) WO2004095663A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100454694C (zh) * 2005-08-02 2009-01-21 夏普株式会社 氮化物半导体发光器件
JP4964512B2 (ja) * 2005-08-02 2012-07-04 シャープ株式会社 窒化物半導体発光装置
KR101136168B1 (ko) * 2006-01-23 2012-04-17 엘지전자 주식회사 레이저 다이오드 패키지 및 그의 제조 방법
JP5030625B2 (ja) * 2006-03-22 2012-09-19 三洋電機株式会社 半導体レーザ装置
WO2007132672A1 (ja) * 2006-05-11 2007-11-22 Panasonic Corporation 半導体レーザ装置、光ピックアップ装置および光情報記録再生装置
JP2008159806A (ja) * 2006-12-22 2008-07-10 Sharp Corp 半導体発光装置およびその製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0655813A1 (de) * 1993-11-25 1995-05-31 Koninklijke Philips Electronics N.V. Lichtemittierende Diode in einem hermetisch verschlossenen Behälter
US5770473A (en) * 1993-07-14 1998-06-23 Corning Incorporated Packaging of high power semiconductor lasers

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2995533B2 (ja) * 1994-09-22 1999-12-27 株式会社ノダ 化粧板
CN2337679Y (zh) * 1998-04-29 1999-09-08 张志林 有机薄膜电致发光元件
JP2000133736A (ja) * 1998-10-26 2000-05-12 Furukawa Electric Co Ltd:The 半導体レーザ素子の気密封止方法及び気密封止装置
JP5031136B2 (ja) * 2000-03-01 2012-09-19 浜松ホトニクス株式会社 半導体レーザ装置
JP2002111134A (ja) * 2000-09-29 2002-04-12 Toshiba Corp 半導体レーザ装置
JP4617600B2 (ja) * 2001-05-02 2011-01-26 ソニー株式会社 2波長半導体レーザ装置
CN1396667A (zh) * 2001-07-16 2003-02-12 诠兴开发科技股份有限公司 发光二极管的封装

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5770473A (en) * 1993-07-14 1998-06-23 Corning Incorporated Packaging of high power semiconductor lasers
EP0655813A1 (de) * 1993-11-25 1995-05-31 Koninklijke Philips Electronics N.V. Lichtemittierende Diode in einem hermetisch verschlossenen Behälter

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
See also references of WO2004095663A1 *
SHARPS J A: "Reliability of hermetically packaged 980 nm diode lasers", LASERS AND ELECTRO-OPTICS SOCIETY ANNUAL MEETING, 1994. LEOS '94 CONFERENCE PROCEEDINGS. IEEE BOSTON, MA, USA 31 OCT.-3 NOV. 1994, NEW YORK, NY, USA,IEEE, US, vol. 2, 31 October 1994 (1994-10-31), pages 35 - 36, XP010220880, ISBN: 0-7803-1470-0 *

Also Published As

Publication number Publication date
TWI236196B (en) 2005-07-11
JPWO2004095663A1 (ja) 2006-07-13
WO2004095663A1 (ja) 2004-11-04
KR20060002824A (ko) 2006-01-09
TW200425603A (en) 2004-11-16
CN1706081A (zh) 2005-12-07
US20060013275A1 (en) 2006-01-19
EP1617531A1 (de) 2006-01-18
CN1324773C (zh) 2007-07-04
KR100785204B1 (ko) 2007-12-11

Similar Documents

Publication Publication Date Title
EP1667241A4 (de) Halbleiterbauelement
EP1605523A4 (de) Halbleiterbauelement
EP1617475A4 (de) Halbleiterbauelement
AU2003298532A8 (en) Grating-stabilized semiconductor laser
AU2003226646A8 (en) Semiconductor device
EP1624358A4 (de) Halbleiterbauelement
TWI319261B (en) Semiconductor device
AU2003234812A8 (en) Semiconductor device
DE602004005760D1 (de) Halbleitervorrichtung
AU2003227230A1 (en) Semiconductor laser device
EP1653507A4 (de) Hochwärmebeständige halbleitereinrichtung
EP1618609A4 (de) Programmierbares halbleiterbauelement
EP1523078A4 (de) Optisches halbleiterbauelement
GB2406970B (en) Semiconductor device
TWI365581B (en) Semiconductor laser
EP1619570A4 (de) Halbleiterbauelement
AU2003251680A8 (en) Semiconductor laser device
AU2003227213A1 (en) Semiconductor device
AU2003292701A1 (en) Semiconductor device
EP1538675A4 (de) Halbleiterbauelement
EP1622158A4 (de) Halbleiterlaserbauelement
AU2003220989A1 (en) Semiconductor device
AU2003211753A1 (en) Semiconductor device
EP1628399A4 (de) Halbleiterbauelement
EP1542280A4 (de) Glied fur ein halbleiterbauelement

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20051021

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL HR LT LV MK

A4 Supplementary search report drawn up and despatched

Effective date: 20060404

DAX Request for extension of the european patent (deleted)
RBV Designated contracting states (corrected)

Designated state(s): DE FR GB NL

17Q First examination report despatched

Effective date: 20061102

APBN Date of receipt of notice of appeal recorded

Free format text: ORIGINAL CODE: EPIDOSNNOA2E

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: TOTTORI SANYO ELECTRIC CO., LTD.

Owner name: SANYO ELECTRIC CO., LTD.

APBR Date of receipt of statement of grounds of appeal recorded

Free format text: ORIGINAL CODE: EPIDOSNNOA3E

APAF Appeal reference modified

Free format text: ORIGINAL CODE: EPIDOSCREFNE

APBT Appeal procedure closed

Free format text: ORIGINAL CODE: EPIDOSNNOA9E

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN

18W Application withdrawn

Effective date: 20110216