EP1570504A1 - Commutateur micro-mecanique et procede de realisation - Google Patents
Commutateur micro-mecanique et procede de realisationInfo
- Publication number
- EP1570504A1 EP1570504A1 EP03815100A EP03815100A EP1570504A1 EP 1570504 A1 EP1570504 A1 EP 1570504A1 EP 03815100 A EP03815100 A EP 03815100A EP 03815100 A EP03815100 A EP 03815100A EP 1570504 A1 EP1570504 A1 EP 1570504A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- bridge
- conductive element
- conductive
- substrate
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims 2
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000004020 conductor Substances 0.000 claims abstract description 7
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 238000000151 deposition Methods 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
Definitions
- the invention relates to a micro-mechanical switch, comprising a deformable bridge, connected at its ends to a substrate, and actuating means intended to deform the deformable bridge so as to establish electrical contact between a first conductive element, integral with the substrate and disposed between the bridge and the substrate, and a third conductive element disposed on the substrate at the periphery of the bridge.
- contact resistance may fluctuate over time or be too high when contact is not intimate enough.
- a known embodiment comprises a deformable bridge and first conductive elements, intended to be connected to each other, arranged on a substrate between the substrate and the bridge.
- the bridge has a second conductive element on its underside.
- the electrical contact between the first conductive elements is established when the bridge is deformed by actuating means so that the second conductive element touches all the first conductive elements.
- this constitutes a hyperstatic structure (comparable to a table with four legs where one leg is superabundant), that is to say that only one of the contacts is intimate and has a low contact resistance while the contact resistances of the other contacts are higher.
- very precise precision is required during the manufacture of the switch, which would make manufacture difficult and expensive.
- Document WO02 / 01584 describes a micro-mechanical switch comprising a metal bridge, arranged on a substrate and deformable by means of an electrostatic actuator, and a conductive element arranged between the bridge and the substrate.
- the actuation of the electrostatic actuator causes the deformation of the bridge, so as to establish an electrical contact between the bridge and the conductive element.
- the bridge can undergo hardening, in use, which can lead to its rupture.
- the invention aims to remedy these drawbacks and, more particularly, to produce a more robust switch, while avoiding the problems of hyperstatic structure.
- the deformable bridge comprises at least a first insulating layer pierced with an orifice, in which is arranged a conductive material projecting from the face bottom of the bridge so as to form a second conductive element, intended to come into contact with the first conductive element during the deformation of the bridge, a conductive line connecting the second conductive element to the third conductive element being disposed on the first insulating layer.
- the invention also relates to a method for producing a switch according to the invention, in which the manufacturing of the deformable bridge is carried out by: depositing a sacrificial layer above the first conductive element, depositing a first insulating layer on the sacrificial layer, etching of an orifice in the first insulating layer and in the sacrificial layer, deposition of a metallic layer so as to fill the orifice and to form the second conductive element and the conductive line, removal of the layer sacrificial.
- FIG. 1 shows a micro-mechanical switch according to the prior art.
- FIG. 2 represents a micro-mechanical switch according to the invention.
- FIG. 3 represents a preferred embodiment of a micro-mechanical switch according to the invention.
- FIG. 4 represents a top view of an embodiment of a switch according to the invention. Description of particular embodiments.
- the micro-mechanical switch shown in FIG. 1 is composed of a deformable bridge 1, attached at its ends to a substrate 2, and actuation means 3a and 3b intended to deform the deformable bridge 1 so as to establish contact electric between first conductive elements 4 (three in FIG. 1), formed on the substrate 2 between the bridge 1 and the substrate 2, and a second conductive element 5, integral with a lower face of the bridge 1.
- This switch according to l prior art establishes electrical contact between the first conductive elements 4 when the actuating means 3 deform the bridge
- the second conductive element 5 is permanently connected, via a conductive line 6 secured to the bridge 1, to a third conductive element 7 disposed on the substrate 2 at the periphery of the bridge 1.
- the deformation of the bridge 1 establishes an electrical contact, via the conductive line 6 and the second conductive element 5, between the third conductive element 7 and a single first conductive element 4, disposed opposite screw of the second conductive element 5.
- the deformable bridge 1 is constituted by a first insulating layer pierced with an orifice 10, in which a conductive material is arranged projecting from the underside of the bridge 1 so as to form a second conductive element 5, intended coming into contact with the first conductive element during the deformation of the bridge 1.
- the underside of the bridge 1 is made of insulating material.
- the deformable bridge 1 can be formed by a superposition of thin layers.
- a conductive layer, constituting the conductive line 6 and connecting the second conductive element 5 and the third conductive element 7, can be formed on the first insulating layer.
- the second conductive element 5 and the conductive line 6 can be constituted by the same conductive layer.
- a second insulating layer 8 can be formed above the conductive line 6.
- a conductive line 6 connects the second conductive element 5 to two third conductive elements 7, arranged on either side of the bridge 1.
- the bridge 1 can have an insulating layer 8 above the conductive line 6.
- An insulating layer 9 is preferably arranged between the first conductive element 4 and the substrate 2, the insulating layer 9 having lateral dimensions smaller than the lateral dimensions of the first conductive element 4, so that the first conductive element 4 is convex. Thanks to the convex shape of the first conductive element 4, the contact between the first conductive element 4 and the second conductive element 5 forms a contact located at the center of the boss.
- a switch according to the invention has the advantage of being robust and of having a single contact, which can be made sufficiently intimate by suitable actuation. Therefore, the contact resistance is very low.
- the micro-mechanical switch can be a normally open radio frequency switch, the actuation means 3 comprising an electrostatic actuator.
- the first conductive element 4 is a radiofrequency line.
- the actuating means 3 are preferably constituted by electrodes 3a and 3b of an electrostatic actuator. The electrodes 3a can be placed in the first insulating layer of the bridge
- the electrodes 3a, integral with the bridge 1, are connected to a voltage source.
- the electrodes 3b make it possible to establish an attractive electrical force between the electrodes 3a and the electrodes 3b making it possible to deform the bridge 1 when a voltage is applied between the electrodes 3a and 3b.
- the electrodes 3b serve as a waveguide for the signal transmitted by the radiofrequency line constituting the first conductive element 4.
- the third conductive elements 7 are constituted by electric ground planes arranged on the substrate 2 on either side of the deformable bridge 1.
- the radiofrequency switch described above represents the advantage of transmitting, in the on state, the radiofrequency signal without any loss of contact.
- the entire radiofrequency component can be produced on the substrate 2 by conventional techniques for manufacturing integrated circuits.
- the surface of the substrate 2, on which the third and first conductive elements 4 and 7 are arranged, must be made of insulating material to avoid a short circuit permanent conductive elements.
- the insulating material is typically silicon oxide.
- an insulating layer 9 is deposited on the substrate 2 at the locations of the electrodes 3b and at the location of the first conductive element 4, the insulating layer 9 having lateral dimensions smaller than the lateral dimensions of the electrodes 3b and of the first conductive element 4 respectively.
- the material of the insulating layer 9 can for example be Si 3 N 4 or Si0 2 .
- the first conductive element 4 and the electrodes 3b can be deposited on the insulating layer 9 by depositing a metallic layer, preferably made of gold.
- the sacrificial layer can then be deposited above the first conductive element 4 and the electrodes 3b.
- the material of the sacrificial layer is typically a polymer material, allowing it to be easily removed after the fabrication of the bridge.
- a layer of insulating material forming the framework of the bridge 1 is deposited.
- the insulating material of this layer can for example be Si 3 N 4 or Si0 2 .
- the electrodes 3a can be manufactured by a metallic deposit on the insulating layer forming the framework of the bridge 1 and covering of the electrodes 3a by an additional insulating layer (not shown), intended to isolate the electrodes 3a from the conductive line 6.
- the orifice 10 is pierced by etching in the insulating layer forming the framework of the bridge 1, in the additional insulating layer and in the sacrificial layer.
- the second conductive element 5 and the conductive line 6 are then produced, preferably simultaneously, by depositing a metal layer so as to fill the orifice 10 and to form a layer connecting the second conductive element 5 and the third conductive element 7
- a second insulating layer Preferably a second insulating layer
Landscapes
- Micromachines (AREA)
- Manufacture Of Switches (AREA)
- Control Of El Displays (AREA)
Description
Claims
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0215605 | 2002-12-10 | ||
FR0215605A FR2848331B1 (fr) | 2002-12-10 | 2002-12-10 | Commutateur micro-mecanique et procede de realisation |
PCT/FR2003/003641 WO2004064096A1 (fr) | 2002-12-10 | 2003-12-09 | Commutateur micro-mecanique et procede de realisation |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1570504A1 true EP1570504A1 (fr) | 2005-09-07 |
EP1570504B1 EP1570504B1 (fr) | 2011-08-24 |
Family
ID=32320165
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP03815100A Expired - Lifetime EP1570504B1 (fr) | 2002-12-10 | 2003-12-09 | Commutateur micro-mecanique et procede de realisation |
Country Status (5)
Country | Link |
---|---|
US (1) | US7382218B2 (fr) |
EP (1) | EP1570504B1 (fr) |
AT (1) | ATE521977T1 (fr) |
FR (1) | FR2848331B1 (fr) |
WO (1) | WO2004064096A1 (fr) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2876995B1 (fr) * | 2004-10-26 | 2007-05-04 | Commissariat Energie Atomique | Microsysteme comportant un pont deformable |
JP4234737B2 (ja) * | 2006-07-24 | 2009-03-04 | 株式会社東芝 | Memsスイッチ |
US8450902B2 (en) * | 2006-08-28 | 2013-05-28 | Xerox Corporation | Electrostatic actuator device having multiple gap heights |
KR100837741B1 (ko) * | 2006-12-29 | 2008-06-13 | 삼성전자주식회사 | 미세 스위치 소자 및 미세 스위치 소자의 제조방법 |
JP4334581B2 (ja) * | 2007-04-27 | 2009-09-30 | 株式会社東芝 | 静電型アクチュエータ |
US7902946B2 (en) * | 2008-07-11 | 2011-03-08 | National Semiconductor Corporation | MEMS relay with a flux path that is decoupled from an electrical path through the switch and a suspension structure that is independent of the core structure and a method of forming the same |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6046659A (en) * | 1998-05-15 | 2000-04-04 | Hughes Electronics Corporation | Design and fabrication of broadband surface-micromachined micro-electro-mechanical switches for microwave and millimeter-wave applications |
WO2002001584A1 (fr) * | 2000-06-28 | 2002-01-03 | The Regents Of The University Of California | Interrupteurs microelectromecaniques capacitifs |
EP1419511B1 (fr) * | 2001-08-20 | 2006-06-28 | Honeywell International Inc. | Thermocontacteur a rupture brusque |
US6876282B2 (en) * | 2002-05-17 | 2005-04-05 | International Business Machines Corporation | Micro-electro-mechanical RF switch |
JP4447940B2 (ja) * | 2004-02-27 | 2010-04-07 | 富士通株式会社 | マイクロスイッチング素子製造方法およびマイクロスイッチング素子 |
-
2002
- 2002-12-10 FR FR0215605A patent/FR2848331B1/fr not_active Expired - Fee Related
-
2003
- 2003-12-09 AT AT03815100T patent/ATE521977T1/de not_active IP Right Cessation
- 2003-12-09 EP EP03815100A patent/EP1570504B1/fr not_active Expired - Lifetime
- 2003-12-09 WO PCT/FR2003/003641 patent/WO2004064096A1/fr active Application Filing
- 2003-12-09 US US10/536,183 patent/US7382218B2/en active Active
Non-Patent Citations (1)
Title |
---|
See references of WO2004064096A1 * |
Also Published As
Publication number | Publication date |
---|---|
FR2848331B1 (fr) | 2005-03-11 |
ATE521977T1 (de) | 2011-09-15 |
US7382218B2 (en) | 2008-06-03 |
EP1570504B1 (fr) | 2011-08-24 |
FR2848331A1 (fr) | 2004-06-11 |
WO2004064096A1 (fr) | 2004-07-29 |
US20050280974A1 (en) | 2005-12-22 |
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