EP1535353A2 - Organic photovoltaic component and method for production thereof - Google Patents

Organic photovoltaic component and method for production thereof

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Publication number
EP1535353A2
EP1535353A2 EP03794811A EP03794811A EP1535353A2 EP 1535353 A2 EP1535353 A2 EP 1535353A2 EP 03794811 A EP03794811 A EP 03794811A EP 03794811 A EP03794811 A EP 03794811A EP 1535353 A2 EP1535353 A2 EP 1535353A2
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EP
European Patent Office
Prior art keywords
layer
structuring
semiconductor layer
substrate
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
EP03794811A
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German (de)
French (fr)
Inventor
Christoph Brabec
Jens Hauch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Konarka Technologies Inc
Original Assignee
Siemens AG
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Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP1535353A2 publication Critical patent/EP1535353A2/en
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/87—Light-trapping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the invention relates to an organic photovoltaic component, in particular an organic solar cell.
  • a positive electrode typically ITO, Indium Tin Oxide
  • the hole-guiding layer which, for example, consists of PEDOT with PSS as anion.
  • the adjacent layer is an absorber, typically an organic semiconductor (eg, a mixture of conjugated polymer with fullerene).
  • the negative electrode eg Ca / Ag or LiF / Al.
  • the individual layers may differ, in particular the electrodes, the conjugated polymer and also the acceptor (PCBM, a soluble methanofullerene).
  • the active semiconductor layer (the absorber) is made very thin (typically between 20 nm and 2000 nm) in order to avoid recombination.
  • this thin absorber layer is usually not sufficient to completely absorb the incident light. Part of the light is therefore lost (absorbed) or reflected at the back electrode (and decoupled from the front of the solar cell).
  • the object of the invention is therefore to reduce these loss processes by the simplest and most cost-effective process step.
  • the invention relates to an organic photovoltaic device comprising a substrate, a positive electrode, an organic semiconductor and a negative electrode, wherein the substrate and / or one or more additional transport layer (s) is / are structured between the electrode and the semiconductor layer.
  • the subject matter of the invention is a method for structuring the semiconductor layer of a photovoltaic component by maintaining an existing structuring of a lower layer to which the semiconductor layer is applied.
  • the substrate is structured so that the electrode and the semiconductor layer follow the structuring and thus the specific absorption of the semiconductor layer is increased.
  • the semiconductor layer is applied so that it planarizes the structuring.
  • multiple layers underlying the semiconductor layer are patterned.
  • Interlayers may also be incorporated into the photovoltaic device to provide a patterned surface onto which the semiconductor layer is deposited.
  • the structuring of one or more layers of the photovoltaic element leads to better coupling of light into the solar cell. Therefore, this type of structuring is also called “lighttrapping”.
  • organic material and / or “functional polymer” here includes all types of organic, organometallic and / or inorganic plastics, which are referred to in English for example as “plastics.” These are all types of substances Exception of semiconductors, which form the classical diodes (germanium, silicon), and the typical metallic conductor. make sense on organic material as a carbon-containing material is therefore not provided, but is also thought of the widespread use of eg silicones. Furthermore, the term should not be restricted in terms of molecular size, in particular to polymeric and / or oligomeric materials, but it is also quite possible to use "small molecules”.
  • light trapping is achieved by a periodic structuring of at least one of the layers of the solar cell.
  • the absorber for example by a
  • embossing the semiconductor is a critical process step because it can easily damage the sensitive semiconductor layer, but the patterning of the semiconductor layer can be combined with patterning of the substrate and / or an additional transport layer in the substrate Be carried out sense of the invention.
  • the upper layer follows the structuring and / or “depicts the structuring upward” only describes the fact that at least part of the lower structuring is traversed upwards, ie either to find the lower structuring partially or completely at the top is.
  • the upper structure can certainly also be supplemented by the structuring, so that a completely different structure results.
  • the invention should not be limited in any way at this point.
  • FIG. 1 shows a layer structure of a photovoltaic component in which the substrate is structured and is planarized again with an additional transport layer and the lower electrode is already applied again to a planar surface.
  • FIG. 2 shows a photovoltaic component in which an additional compensating layer for matching the optical properties (matching layer) is applied to the substrate in such a way that the structuring is imaged upward, thereby structuring the electrode layer, which is then planarized by a hole-conducting layer so that the semiconductor layer is deposited on a planar surface.
  • FIG. 3 shows a photovoltaic component in which a lower electrode is patterned on a planar substrate, the structuring is penetrated by a hole-conducting layer, and finally the semiconductor layer is applied to a structured surface.
  • FIG. 1 shows the substrate 1, which may be a PET film or even a photoresist layer on glass.
  • This substrate is patterned and coated by an additional layer 6 of, for example, a high refractive index material, such as TiO 2 , so that the structure passes through and then again with a layer 7 of transparent material, which also comprises a PET film or a photoresist layer Glass can be planarized.
  • the standard cell is then processed on this substrate, from bottom to top, first a lower electrode 2, which is designed semitransparent (eg ITO) in the case where the side of the substrate 1 represents the light incident side of the photovoltaic device.
  • there is an additional organic electrode 3a for example made of PEDOT, and then the semiconductor layer 4, a second electrode 3b and / or 5.
  • FIG. 2 shows a substrate 1 which is patterned and on which a layer 6 of a material with, for example, a high refractive index, which follows the structuring, is applied. Thereupon is the lower electrode 2, thereupon an additional electrode or transport layer 3a, which planarizes the structuring.
  • the semiconductor layer 4 is applied to a planar surface.
  • the further construction comprises a further electrode or transport layer 3b and the upper electrode 5.
  • the material of layer 6 is generally a layer for improved optical properties and / or optical matching, such as a high refractive index layer.
  • FIG. 3 shows a substrate 1, which is not structured, thereupon a lower electrode 2, which is patterned, thereupon an additional layer 3a, which follows the structuring and on whose structured surface the semiconductor layer 4 is applied.
  • the semiconductor layer 4 planarizes the
  • this electrode can also be made of completely reflecting material.
  • the invention shows photovoltaic components whose specific absorption of light is increased by the structuring of one or more layers of the component, which leads to an improved coupling.
  • the structuring of the layers is carried out without mechanical or thermal loading of the semiconductor layer, so that it remains undamaged.
  • the invention proposes, instead of structuring the semiconductor layer, which indeed causes an increase in the specific absorption, but mechanically, chemically and / or physically stresses the semiconductor layer, a structuring of the substrate before the application of the positive or negative electrode and / or structuring an organic transport layer (eg PEDOT) before application of the semiconductor layer.
  • the structuring steps relate to the substrate, one of the electrodes and / or one of the additional transport layer (s) but not the semiconductor, so that it remains unloaded.
  • structurable substrates would be films or layers of conventional polymers such as PET, PMMA, PC. These films may typically have a film thickness between 10 and 1000 microns, the depth and period of the embossed periodic pattern may be in the 10-1000 nm range, the depth of aperiodic irregular embossed structures may be in the 1 - 500 micron range.
  • planarization layers with a high optical refractive index examples include polyimides and / or polymers filled with inorganic nanoparticles (TiO 2).

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The invention relates to an organic photovoltaic component, in particular an organic solar cell, in which one or more layers is (are) structured.

Description

Beschreibungdescription
Organisches photovoltaisches Bauelement und Herstellungsverfahren dazuOrganic photovoltaic device and manufacturing method thereto
Die Erfindung betrifft ein organisches photovoltaisches Bauelement, insbesondere eine organische Solarzelle.The invention relates to an organic photovoltaic component, in particular an organic solar cell.
Bekannt sind Solarzellen, beispielsweise mit folgendem Zell- aufbau:Solar cells are known, for example with the following cell structure:
Auf einem Substrat befindet sich eine positive Elektrode (typischerweise ITO, Indium Tin Oxide) . Darauf befindet sich die Lochleitschicht, die beispielsweise aus PEDOT mit PSS als Anion besteht. Die angrenzende Schicht ist ein Absorber, in der Regel ein organischer Halbleiter (z. B. eine Mischung aus konjugiertem Polymer mit Fulleren) . Daran schließt die negative Elektrode (z. B: Ca/Ag oder LiF/Al) an. Die einzelnen Schichten können jedoch abweichen, insbesondere die Elektro- den, das konjugierte Polymer und auch der Akzeptor (PCBM, ein lösliches Methanofullerene) .On a substrate is a positive electrode (typically ITO, Indium Tin Oxide). On top of this is the hole-guiding layer which, for example, consists of PEDOT with PSS as anion. The adjacent layer is an absorber, typically an organic semiconductor (eg, a mixture of conjugated polymer with fullerene). This is followed by the negative electrode (eg Ca / Ag or LiF / Al). However, the individual layers may differ, in particular the electrodes, the conjugated polymer and also the acceptor (PCBM, a soluble methanofullerene).
Durch die geringe Beweglichkeit der typischerweise in diesen Solarzellen verwendeten Halbleitermaterialien wird die aktive Halbleiterschicht (der Absorber) sehr dünn (typischerweise zwischen 20 nm und 2000 nm) ausgeführt, um Rekombination zu vermeiden. Diese dünne Absorberschicht reicht jedoch in der Regel nicht aus, um das eingestrahlte Licht vollständig zu absorbieren. Ein Teil des Lichts wird deshalb an der Rück- elektrode verloren (absorbiert) oder reflektiert (und durch die Frontseite der Solarzelle wieder ausgekoppelt) .Due to the low mobility of the semiconductor materials typically used in these solar cells, the active semiconductor layer (the absorber) is made very thin (typically between 20 nm and 2000 nm) in order to avoid recombination. However, this thin absorber layer is usually not sufficient to completely absorb the incident light. Part of the light is therefore lost (absorbed) or reflected at the back electrode (and decoupled from the front of the solar cell).
Aufgabe der Erfindung ist es daher, diese Verlustprozesse durch einen möglichst einfachen und kostengünstigen Prozess- schritt zu vermindern. Gegenstand der Erfindung ist ein organisches photovoltaisches Bauelement, ein Substrat, eine positive Elektrode, einen organischen Halbleiter und eine negative Elektrode umfassend, wobei das Substrat und/oder eine oder mehrere zusätzliche Transportschicht (en) zwischen der Elektrode und der Halbleiterschicht strukturiert ist (sind). Außerdem ist Gegenstand der Erfindung ein Verfahren zur Strukturierung der Halbleiterschicht eines photovoltaischen Bauelements, durch Beibehaltung einer bestehenden Strukturierung einer unteren Schicht, auf die die Halbleiterschicht aufgebracht wird.The object of the invention is therefore to reduce these loss processes by the simplest and most cost-effective process step. The invention relates to an organic photovoltaic device comprising a substrate, a positive electrode, an organic semiconductor and a negative electrode, wherein the substrate and / or one or more additional transport layer (s) is / are structured between the electrode and the semiconductor layer. , In addition, the subject matter of the invention is a method for structuring the semiconductor layer of a photovoltaic component by maintaining an existing structuring of a lower layer to which the semiconductor layer is applied.
Nach einer Ausführungsform der Erfindung ist das Substrat strukturiert, so dass die Elektrode und die Halbleiterschicht der Strukturierung folgen und damit die spezifische Absorpti- on der Halbleiterschicht erhöht wird.According to one embodiment of the invention, the substrate is structured so that the electrode and the semiconductor layer follow the structuring and thus the specific absorption of the semiconductor layer is increased.
Nach einer anderen Ausführungsform wird die Halbleiterschicht so aufgetragen, dass sie die Strukturierung planarisiert .According to another embodiment, the semiconductor layer is applied so that it planarizes the structuring.
Nach einer Ausführungsform werden mehrere Schichten, die unterhalb der Halbleiterschicht liegen, strukturiert. Es können auch Zwischenschichten in das photovoltaische Bauelement eingebaut werden, damit eine strukturierte Oberfläche vorliegt, auf die die Halbleiterschicht aufgebracht wird.In one embodiment, multiple layers underlying the semiconductor layer are patterned. Interlayers may also be incorporated into the photovoltaic device to provide a patterned surface onto which the semiconductor layer is deposited.
Die Strukturierung einer oder mehrerer Schichten des photovoltaischen Elements führt dazu, dass Licht in die Solarzelle besser einkoppelt. Deshalb wird diese Art der Strukturierung auch „Lighttrapping" genannt.The structuring of one or more layers of the photovoltaic element leads to better coupling of light into the solar cell. Therefore, this type of structuring is also called "lighttrapping".
Der Begriff „organisches Material" und/oder „Funktionspoly- mer" umfasst hier alle Arten von organischen, metallorganischen und/oder anorganischen Kunststoffen, die im Englischen z.B. mit „plastics" bezeichnet werden. Es handelt sich um al- le Arten von Stoffen mit Ausnahme der Halbleiter, die die klassischen Dioden bilden (Germanium, Silizium) , und der typischen metallischen Leiter. Eine Beschränkung im dogmati- sehen Sinn auf organisches Material als Kohlenstoffenthaltendes Material ist demnach nicht vorgesehen, vielmehr ist auch an den breiten Einsatz von z.B. Siliconen gedacht. Weiterhin soll der Term keiner Beschränkung im Hinblick auf die Molekülgröße, insbesondere auf polymere und/oder oligome- re Materialien unterliegen, sondern es ist durchaus auch der Einsatz von „small molecules möglich.The term "organic material" and / or "functional polymer" here includes all types of organic, organometallic and / or inorganic plastics, which are referred to in English for example as "plastics." These are all types of substances Exception of semiconductors, which form the classical diodes (germanium, silicon), and the typical metallic conductor. make sense on organic material as a carbon-containing material is therefore not provided, but is also thought of the widespread use of eg silicones. Furthermore, the term should not be restricted in terms of molecular size, in particular to polymeric and / or oligomeric materials, but it is also quite possible to use "small molecules".
Generell wird Lighttrapping durch eine periodische Struktu- rierung zumindest einer der Schichten der Solarzelle erreicht. Es wurde zwar schon vorgeschlagen (M. Nigge an et al., „Trapping Light in organic plastic solar cells with in- tegrated diffraction gratings" , Proceedings of the World Pho- tovoltaic Congress, Munich 2001) , den Absorber (zum Beispiel durch einen Prägeprozess, Stempelprozess) periodisch zu strukturieren. Die Prägung des Halbleiters ist jedoch ein kritischer Prozessschritt, da bei diesem Prozess die sensible Halbleiterschicht leicht beschädigt werden kann. Trotzdem kann die Strukturierung der Halbleiterschicht in Kombination mit der Strukturierung des Substrats und/oder einer zusätzlichen Transportschicht im Sinne der Erfindung durchgeführt werden.In general, light trapping is achieved by a periodic structuring of at least one of the layers of the solar cell. Although it has already been proposed (M. Nigge et al., "Trapping Light in organic plastic solar cells with integrated diffraction gratings", Proceedings of the World Photo- voltaic Congress, Munich 2001), the absorber (for example by a However, embossing the semiconductor is a critical process step because it can easily damage the sensitive semiconductor layer, but the patterning of the semiconductor layer can be combined with patterning of the substrate and / or an additional transport layer in the substrate Be carried out sense of the invention.
Die Begriffe die obere Schicht „folgt der Strukturierung" und/oder „bildet die Strukturierung nach oben hin ab" beschreibt nur die Tatsache, dass zumindest ein Teil der unteren Strukturierung nach oben hin durchgepaust wird, also entweder die untere Strukturierung teilweise oder ganz oben wiederzufinden ist. Dabei kann die obere Struktur durchaus auch noch Ergänzungen der Strukturierung erfahren, so dass sich eine gänzlich andere Struktur ergibt. Die Erfindung soll an dieser Stelle in keiner Weise beschränkt sein.The terms the upper layer "follows the structuring" and / or "depicts the structuring upward" only describes the fact that at least part of the lower structuring is traversed upwards, ie either to find the lower structuring partially or completely at the top is. The upper structure can certainly also be supplemented by the structuring, so that a completely different structure results. The invention should not be limited in any way at this point.
Im folgenden wird die Erfindung noch anhand einzelner Bei- spiele, die Ausführungsformen der Erfindung betreffen, näher erläutert. Figur 1 zeigt einen Schichtaufbau eines photovoltaischen Bauelements, bei dem das Substrat strukturiert ist und mit einer zusätzlichen Transportschicht wieder planarisiert wird und die untere Elektrode bereits wieder auf eine planare Oberflä- ehe aufgetragen wird.In the following, the invention will be explained in more detail with reference to individual examples relating to embodiments of the invention. FIG. 1 shows a layer structure of a photovoltaic component in which the substrate is structured and is planarized again with an additional transport layer and the lower electrode is already applied again to a planar surface.
Figur 2 zeigt ein photovoltaisches Bauelement, bei dem auf dem Substrat eine zusätzliche Ausgleichsschicht zur Anpassung der optischen Eigenschaften (matching layer) so aufgebracht ist, dass die Strukturierung nach oben hin abgebildet wird, eine Strukturierung der Elektrodenschicht bewirkt, die dann durch eine Lochleitschicht planarisiert wird, so dass die Halbleiterschicht auf eine planare Oberfläche aufgebracht wird.FIG. 2 shows a photovoltaic component in which an additional compensating layer for matching the optical properties (matching layer) is applied to the substrate in such a way that the structuring is imaged upward, thereby structuring the electrode layer, which is then planarized by a hole-conducting layer so that the semiconductor layer is deposited on a planar surface.
Figur 3 zeigt ein photovoltaisches Bauelement, bei dem auf einem planarem Substrat eine untere Elektrode strukturiert wird, die Strukturierung durch eine Lochleitschicht durchwirkt und schließlich die Halbleiterschicht auf eine struktu- rierte Oberfläche aufgebracht wird.FIG. 3 shows a photovoltaic component in which a lower electrode is patterned on a planar substrate, the structuring is penetrated by a hole-conducting layer, and finally the semiconductor layer is applied to a structured surface.
In Figur 1 erkennt man das Substrat 1, das eine PET Folie oder auch eine Photolackschicht auf Glas sein kann. Dieses Substrat wird strukturiert und durch eine zusätzliche Schicht 6, beispielsweise eines Materials mit hohem Brechungsindex, wie Ti02, beschichtet, so dass sich die Struktur durchpaust und dann wieder mit einer Schicht 7 eines transparenten Materials, das auch eine PET Folie oder eine Photolackschicht auf Glas sein kann, planarisiert. Auf diesem Substrat wird dann die Standardzelle prozessiert, von unten nach oben als erstes eine untere Elektrode 2, die für den Fall, dass die Seite des Substrats 1 die lichteinfallende Seite des photovoltaischen Bauelements darstellt, semitransparent (z.B. ITO) ausgestaltet ist. Darauf befindet sich bei dieser Ausführungsform eine zusätzliche organische Elektrode 3a, beispielsweise aus PEDOT und darauf die Halbleiterschicht 4, eine zweite Elektrode 3b und/oder 5. Figur 2 zeigt ein Substrat 1, das strukturiert ist und auf dem eine Schicht 6 eines Materials mit beispielsweise hohem Brechungsindex aufgebracht ist, das der Strukturierung folgt. Darauf befindet sich die untere Elektrode 2, darauf eine zusätzliche Elektrode oder Transportschicht 3a, die die Strukturierung planarisiert. Die Halbleiterschicht 4 ist auf eine planare Oberfläche aufgebracht. Der weitere Aufbau umfasst eine weitere Elektrode oder Transportschicht 3b und die obere Elektrode 5.FIG. 1 shows the substrate 1, which may be a PET film or even a photoresist layer on glass. This substrate is patterned and coated by an additional layer 6 of, for example, a high refractive index material, such as TiO 2 , so that the structure passes through and then again with a layer 7 of transparent material, which also comprises a PET film or a photoresist layer Glass can be planarized. The standard cell is then processed on this substrate, from bottom to top, first a lower electrode 2, which is designed semitransparent (eg ITO) in the case where the side of the substrate 1 represents the light incident side of the photovoltaic device. In this embodiment, there is an additional organic electrode 3a, for example made of PEDOT, and then the semiconductor layer 4, a second electrode 3b and / or 5. FIG. 2 shows a substrate 1 which is patterned and on which a layer 6 of a material with, for example, a high refractive index, which follows the structuring, is applied. Thereupon is the lower electrode 2, thereupon an additional electrode or transport layer 3a, which planarizes the structuring. The semiconductor layer 4 is applied to a planar surface. The further construction comprises a further electrode or transport layer 3b and the upper electrode 5.
Das Material der Schicht 6 ist allgemein eine Schicht für verbesserte optische Eigenschaften und/oder optische Anpassung, wie zum Beispiel eine Schicht mit hohem Brechungsindex.The material of layer 6 is generally a layer for improved optical properties and / or optical matching, such as a high refractive index layer.
Figur 3 zeigt ein Subtrat 1 , das nicht strukturiert ist, darauf eine untere Elektrode 2, die strukturiert ist, darauf eine zusätzliche Schicht 3a, die der Strukturierung folgt und auf deren strukturierter Oberfläche die Halbleiterschicht 4 aufgebracht wird. Die Halbleiterschicht 4 planarisiert dieFIG. 3 shows a substrate 1, which is not structured, thereupon a lower electrode 2, which is patterned, thereupon an additional layer 3a, which follows the structuring and on whose structured surface the semiconductor layer 4 is applied. The semiconductor layer 4 planarizes the
Strukturierung, so dass eine zusätzliche Elektrode 3b auf eine planare Oberfläche der Halbleiterschicht 4 aufgebracht wird. Eine weitere Elektrode 3b und die obere Elektrode 5 sind bei der gezeigten Ausführung nicht strukturiert.Structuring, so that an additional electrode 3b is applied to a planar surface of the semiconductor layer 4. Another electrode 3b and the upper electrode 5 are not structured in the embodiment shown.
Für den Fall, dass die untere Elektrode nicht auf der lichteinfallenden Seite ist, kann diese Elektrode auch aus komplett reflektierendem Material ausgeführt sein.In the event that the lower electrode is not on the light incident side, this electrode can also be made of completely reflecting material.
Die Erfindung zeigt erstmals photovoltaische Bauelemente, deren spezifische Absorption von Licht durch die Strukturierung einer oder mehrerer Schichten des Bauelements, die zu einer verbesserten Einkopplung führen, erhöht wird. Die Strukturierung der Schichten wird dabei ohne mechanische oder thermi- sehe Belastung der Halbleiterschicht ausgeführt, so dass diese unbeschadet bleibt. Durch die Erfindung wird vorgeschlagen, anstatt einer Strukturierung der Halbleiterschicht, die zwar eine Erhöhung der spezifischen Absorption bewirkt, jedoch die Halbleiterschicht mechanisch, chemisch und/oder physikalisch belastet, eine Strukturierung des Substrates vor der Aufbringung der positiven oder negativen Elektrode und/oder eine Strukturierung einer organischen Transportschicht (z.B. PEDOT) vor Aufbringung der Halbleiterschicht. Die Strukturierungsschritte betreffen das Substrat, eine der Elektroden und/oder eine der zusätzli- che(n) Transportschicht (en) aber nicht den Halbleiter, so dass dieser unbelastet bleibt.For the first time, the invention shows photovoltaic components whose specific absorption of light is increased by the structuring of one or more layers of the component, which leads to an improved coupling. The structuring of the layers is carried out without mechanical or thermal loading of the semiconductor layer, so that it remains undamaged. The invention proposes, instead of structuring the semiconductor layer, which indeed causes an increase in the specific absorption, but mechanically, chemically and / or physically stresses the semiconductor layer, a structuring of the substrate before the application of the positive or negative electrode and / or structuring an organic transport layer (eg PEDOT) before application of the semiconductor layer. The structuring steps relate to the substrate, one of the electrodes and / or one of the additional transport layer (s) but not the semiconductor, so that it remains unloaded.
Beispiele für strukturierbare Substrate wären Folien oder Schichten aus konventionellen Polymeren wie PET, PMMA, PC. Diese Folien können typischerweise eine Schichtdicke zwischen 10 und 1000 micron haben, die Tiefe und Periode der eingeprägten periodischen Strukturierung kann im 10 - 1000 nm Bereich sein, die Tiefe von aperiodischen irregulären geprägten Strukturen kann im 1 - 500 micron Bereich sein.Examples of structurable substrates would be films or layers of conventional polymers such as PET, PMMA, PC. These films may typically have a film thickness between 10 and 1000 microns, the depth and period of the embossed periodic pattern may be in the 10-1000 nm range, the depth of aperiodic irregular embossed structures may be in the 1 - 500 micron range.
Beispiele für Planarisierungslayer mit hohem optischen Brechungsindex wären Polyimide und/oder mit anorganischen Nano- partikel (Ti02) gefüllte Polymere. Examples of planarization layers with a high optical refractive index would be polyimides and / or polymers filled with inorganic nanoparticles (TiO 2).

Claims

Patentansprüche claims
1. Organisches photovoltaisches Bauelement, ein Substrat, eine positive Elektrode, einen organischen Halbleiter und eine negative Elektrode umfassend, wobei das Substrat und/oder eine oder mehrere zusätzliche Transportschicht (en) zwischen der Elektrode und der Halbleiterschicht strukturiert ist (sind) .An organic photovoltaic device comprising a substrate, a positive electrode, an organic semiconductor and a negative electrode, wherein the substrate and / or one or more additional transport layer (s) is (are) structured between the electrode and the semiconductor layer.
2. Organisches photovoltaisches Bauelement nach Anspruch 1, bei dem das Substrat eine flexible Folie ist, die strukturiert ist.2. An organic photovoltaic device according to claim 1, wherein the substrate is a flexible film which is structured.
3. Organisches photovoltaisches Bauelement nach einem der vorstehenden Ansprüche, bei dem das Substrat und/oder eine zusätzliche Schicht oberhalb oder unterhalb der Halbleiterschicht strukturiert ist.3. Organic photovoltaic device according to one of the preceding claims, wherein the substrate and / or an additional layer above or below the semiconductor layer is structured.
4. Verfahren zur Strukturierung der Halbleiterschicht eines photovoltaischen Bauelements, durch Beibehaltung einer beste- henden Strukturierung einer unteren Schicht, auf die die Halbleiterschicht aufgebracht wird.4. A method for structuring the semiconductor layer of a photovoltaic device, by maintaining an existing structuring of a lower layer to which the semiconductor layer is applied.
5. Verfahren nach Anspruch 4, bei dem die Halbleiterschicht die Strukturierung der unteren Schicht (en) planarisiert.5. The method of claim 4, wherein the semiconductor layer planarizes the patterning of the lower layer (s).
6. Verfahren nach einem der Ansprüche 4 oder 5, bei dem die Strukturierung durch Einführen einer zusätzlichen Schicht erfolgt. 6. The method according to any one of claims 4 or 5, wherein the structuring is carried out by introducing an additional layer.
EP03794811A 2002-09-05 2003-09-03 Organic photovoltaic component and method for production thereof Withdrawn EP1535353A2 (en)

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