EP1510601A1 - Apparatus for electroplating wafers - Google Patents

Apparatus for electroplating wafers Download PDF

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Publication number
EP1510601A1
EP1510601A1 EP04016833A EP04016833A EP1510601A1 EP 1510601 A1 EP1510601 A1 EP 1510601A1 EP 04016833 A EP04016833 A EP 04016833A EP 04016833 A EP04016833 A EP 04016833A EP 1510601 A1 EP1510601 A1 EP 1510601A1
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Prior art keywords
ring
sealing
sealing ring
der
rings
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German (de)
French (fr)
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EP1510601B1 (en
EP1510601B9 (en
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Jürgen Gutekunst
Vasile-Adrian Bojan
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Rena Sondermaschinen GmbH
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Rena Sondermaschinen GmbH
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/004—Sealing devices
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/12—Process control or regulation

Definitions

  • the invention relates to a device for galvanizing so-called vafers.
  • Vats are sheet-like geometric circular structures, which are usually the basis for chip production for use in the field of semiconductor technology.
  • Such wafers preferably consist of semiconductor materials of the fourth group of the chemical periodic table, for example of silicon or germanium.
  • the elements of the fourth periodic group are neither ion-conducting metals nor ions non-conducting non-metals, but quasi-semi-metals with so-called ion semiconductor properties , These semiconducting properties were taken advantage of by modern technology, which enabled functions to be created in a small space, requiring space dimensions that were thousands of times larger in the past.
  • Vats are usually thin round slices, in the range of about one millimeter thickness and a diameter of about 100 to 300 mm, which are cut from so-called single crystals.
  • the treatment of the surface of the wafer can be done mechanically, for example by polishing, or by application of various coatings.
  • the surface of the wafer can be coated partially or over the entire surface. Such a coating is usually functionally related.
  • the surface treatments are carried out, for example, by means of painting or similar methods, but in particular, as in the present case, by means of the electroplating method, when metal layers are to be applied to the wafer surface.
  • the electroplating method By means of the electroplating method, metal layers are applied to the surface of the wafer, which make this part of the wafer conductive.
  • the plating method has the significant advantage that the metal deposits on the wafer can be made from aqueous solution of metal salts dissolved in distilled water. Specifically, these metal salt solutions are called electrolyte solutions or simplify electrolytes.
  • the electroplating method offers multiple possibilities for varying the design of the features of the metal layer to be applied to the wafer. Since metal salts are readily water-soluble, the various metals can be applied to the wafer from the aqueous solutions of the salts. Regarding conductivity change properties, from less conductive chromium to high conductivity metals such as copper, silver or gold.
  • the electroplating process is optimally applicable because some parameters of the process technology can be largely varied without complications and these parameters have an effect on the structure of the metal coating.
  • these parameters are for example; the concentration of the salt content of the electrolyte baths, the current density and voltage of the supplied via the cathode and anode from an electrical power source process energy and the electrolyte bath temperature.
  • Vafer plating technology is well known, has a wide range of applications and need not be dealt with here.
  • Vafer plating technology is a special field of galvanization. Their advantages are proven in practice.
  • the applied and known Vafergalvanisiervorraumen devices which represent the prior art, are as described by way of example with the figure 1.
  • the problem is generally in the known Vafergalvanisiervoriquesen the sealing region of the plating bath between Vaferoberseite and Vaferunterseite.
  • the O-ring 18 has a kind of Gleitspalt Adjustsfunktion in the sliding gap 21.
  • the assembly of the O-ring 18, however which is disadvantageous, only in the dry state, thus in an empty Galvanisationsbad.
  • the system is therefore due to the dry-wet change, inevitably prone to leaching of the electrolyte.
  • the existing temperature differences play an important role in the various specific thermal expansion coefficients of the device elements used.
  • the required 100% density safety causes process interruptions in the event of leaks in the fixture system.
  • a sustainable, consistent product quality is then not given and considered in percentage terms, the costly raw material of the present to be galvanized Vafer, defective production, from the cost side, to book.
  • a particular weak point, as shown in Figure 1 prior art, is the side clearance between the sealing ring 3 and the device base 1.
  • the seal between these device parts by means of the relatively large-sized O-ring 18 has the disadvantage that the O-ring to roll tends to cause damage to the ring during or after manipulation of the seal ring 3 until its fixation in the final position, with consequent electrolyte leakage.
  • the side clearance, gap 21, between the seal ring 3 and the device base 1 is a system weakness.
  • the insertion of the O-ring 18 is also complicated because the O-ring 18 must be greatly stretched when inserted into the annular groove and it can also come in this manipulation to O-ring damage.
  • the object of the invention was therefore a special galvanizing device to develop, which allows the galvanization of Vaferusionn so to Make sure that a secure seal in relation to the electrolyte leakage between the upper wafer area and the lower wafer area.
  • the installation of the sealing system must be easy to manipulate and be designed so that the fit between the individual Device elements harmonized with each other so that no Side margins, such as gap 21, are present.
  • the elastic actual sealing elements namely elastic O-rings, only in vertical Line can be positioned to friction on the O-ring surface of to exclude at the outset.
  • the O-rings are in the course of device assembly after derem inserting into the provided spaces, no longer be mechanically affected.
  • a galvanizing device for galvanizing wafer wheels consisting of; an internally threaded device base 1, a union nut 4, for fixing and fixing the entire system of the device, an adapter 5, as a receiving base for the wafer disks to be plated and sealing members for sealing the electrolyte portion, which is characterized; in that the electroplating device has an upper sealing ring (3), at both ends of which an O-ring inserting recess is situated, for the insertable O-rings (6), at the upper end of the sealing ring (3) and O-ring (7) lower end of the sealing ring (3) and the electroplating device has a further lower sealing element (10), in the form of a ring or a round disc, each with a counterpart to the upper sealing ring (3) positioned for the insertion of the lower O-rings ( 7) and the sealing ring (3) and the sealing elements (10), use of clearance in the base (1) or the intermediate part (16) used, with inserted O-rings (6) and (7) are pressed against each other, creating
  • the pressing of the lower sealing ring against the upper Sealing ring may alternatively be done by means of the nut 4 when the Device bottom, with intermediate elastic buffer elements 8, such as in the example of Figures 2 and 3, as Druckkonterpart for the sealing ring 10 serves.
  • intermediate elastic buffer elements 8 such as in the example of Figures 2 and 3, as Druckkonterpart for the sealing ring 10 serves.
  • a bellows seal is in such case connected between sealing ring 10 and device base.
  • the bellows can be used arbitrarily, vertically or horizontally and is usually made of rubber or rubberized textile material.
  • the bellows sealing system can, when the bellows 9 in the double is designed and thus forms a chamber, also as a channel 14 for pneumatic or hydraulic pressure media for pressing the lower seal ring 10th serve as shown in Figure 6.
  • FIG. 1 For a detailed explanation of the invention height is exemplified with FIG a device of the prior art shown.
  • the inventive height consists in particular in the vertical system assembly of innovative device.
  • the voltage pressure of the mounted System elements vertical-rectilinear. Accordingly, the assembly of the individual elements according to the insertion principle.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Automation & Control Theory (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Medicinal Preparation (AREA)
  • Medicines Containing Plant Substances (AREA)
  • Sealing Battery Cases Or Jackets (AREA)

Abstract

Device for electroplating conductive and metallized nonconductive plates consisting of a receiver (1), a sealing ring (3), screw cap (4) for pressing on the sealing ring, an elastic element for equalizing large variations (sic) and the pressure on lower sealing ring (10), siphon (9), and O- rings (6) and (7) to prevent electrolyte flowing inwards.

Description

Die Erfindung betrifft eine Vorrichtung zum Galvanisieren von sogenannten Vafern. Vafer sind flächenartige geometrische Rundgebilde, die üblicherweise die Basis zur Chipherstellung zur Anwendung im Bereich der Halbleitertechnologie darstellen. Solche Vafer bestehen vorzugsweise aus Halbleitermaterialien der vierten Gruppe des chemischen Periodensystem, zum Beispiel aus Silizium oder Germanium.
Da die vierte Periodengruppe des chemischen Periodensystems sich in der Mitte zwischen den Metallen der ersten Gruppe und den Nichtmetallen der achten Gruppe des chemischen Periodensystems befindet, sind die Elemente der vierten Periodengruppe weder Ionen leitende Metalle noch Ionen nichtleitende Nichtmetalle, sondern quasi Halbmetalle mit sogenannten Ionen Halbleitereigenschaften.
Diese Halbleitereigenschaften machte sich die moderne Technologie zu Nutze, wodurch auf kleinstem Raum Funktionen darstellbar sind für die früher tausendfach grössere Raumdimensionen erforderlich waren. The invention relates to a device for galvanizing so-called vafers. Vats are sheet-like geometric circular structures, which are usually the basis for chip production for use in the field of semiconductor technology. Such wafers preferably consist of semiconductor materials of the fourth group of the chemical periodic table, for example of silicon or germanium.
Since the fourth periodic group of the chemical periodic table is in the middle between the metals of the first group and the non-metals of the eighth group of the chemical periodic table, the elements of the fourth periodic group are neither ion-conducting metals nor ions non-conducting non-metals, but quasi-semi-metals with so-called ion semiconductor properties ,
These semiconducting properties were taken advantage of by modern technology, which enabled functions to be created in a small space, requiring space dimensions that were thousands of times larger in the past.

Vafer sind in der Regel dünne runde Scheiben, im Bereich von zirka einem Millimeter Stärke und einem Durchmesser von Zirka 100 bis 300 mm, die aus sogenannten Einkristallen geschnitten werden. Für spezielle Einsatzzwecke ist es erforderlich die Vaferoberflächen zu behandeln. Das Behandeln der Vaferoberfläche kann mechanisch, zum Beispiel durch das Polieren erfolgen, oder durch einen Auftrag von verschiedenartigen Beschichtungen. So kann Die Vaferoberfläche beispielsweise parziell oder ganzflächig beschichtet werden. Eine derartige Beschichtung erfolgt in der Regel funktionsbezogen. Die Oberflächenbehandlungen erfolgen beispielsweise mittels Lackier- oder ähnlichen Methoden, insbesondere jedoch, wie im vorliegenden Falle, mittels der Galvanisiermethode, wenn Metallschichten auf die Waferoberfläche aufgetragen werden sollen..
Mittels der Galvanisiermethode werden auf die Vaferoberfläche Metallschichten aufgetragen die diesen Teil des Vafers leitend machen. Die Galvanisiermethode hat den bedeutenden Vorteil, dass die Metallablagerungen auf das Wafer aus wässriger Lösung von in destilliertem Wasser gelösten Metallsalzen erfolgen können. Spezifisch, fachbezogen werden diese Metallsalzlösungen Elektrolytlösungen genannt oder vereinfacht Elektrolyte.
Die Galvanisiermethode bietet die vielfachen Variationsmöglichkeiten für die Gestaltung der Funktionseigenschaften ( features ) der auf das Vafer aufzutragenden Metallschicht. Da Metallsalze gut wasserlöslich sind können aus den wässrigen Lösungen der Salze die verschiedenen Metalle auf das Vafer aufgetragen werden. Bezüglich der Leitfähigkeitsveränderungseigenschaften, angefangen vom weniger leitfähigen Chrom bis zu den gut leitfähigen Metallen wie Kupfer, Silber oder Gold.
Das Galvanisierungsverfahren ist optimal anwendbar, weil einige Parameter der Verfahrenstechnologie weitgehend komplikationslos variierbar sind und diese Parameter eine Auswirkung auf die Struktur der Metallbeschichtung haben. Vats are usually thin round slices, in the range of about one millimeter thickness and a diameter of about 100 to 300 mm, which are cut from so-called single crystals. For special purposes it is necessary to treat the wafer surfaces. The treatment of the surface of the wafer can be done mechanically, for example by polishing, or by application of various coatings. For example, the surface of the wafer can be coated partially or over the entire surface. Such a coating is usually functionally related. The surface treatments are carried out, for example, by means of painting or similar methods, but in particular, as in the present case, by means of the electroplating method, when metal layers are to be applied to the wafer surface.
By means of the electroplating method, metal layers are applied to the surface of the wafer, which make this part of the wafer conductive. The plating method has the significant advantage that the metal deposits on the wafer can be made from aqueous solution of metal salts dissolved in distilled water. Specifically, these metal salt solutions are called electrolyte solutions or simplify electrolytes.
The electroplating method offers multiple possibilities for varying the design of the features of the metal layer to be applied to the wafer. Since metal salts are readily water-soluble, the various metals can be applied to the wafer from the aqueous solutions of the salts. Regarding conductivity change properties, from less conductive chromium to high conductivity metals such as copper, silver or gold.
The electroplating process is optimally applicable because some parameters of the process technology can be largely varied without complications and these parameters have an effect on the structure of the metal coating.

Diese Parameter sind beispielsweise;
die Konzentration des Salzgehaltes der Elektrolytbäder,
die Stromdichte und Stromspannung der über die Kathode und Anode aus einer elektrischen Stromquelle zugeführten Prozessenergie und
die Elektrolytbadtemperatur.These parameters are for example;
the concentration of the salt content of the electrolyte baths,
the current density and voltage of the supplied via the cathode and anode from an electrical power source process energy and
the electrolyte bath temperature.

Die Galvanisiertechnologie ist hinreichend bekannt, besitzt ein umfangreiches Anwendungsspektrum und braucht hier nicht weiter abgehandelt zu werden.
Die Vafergalvanisiertechnologie dagegen ist ein spezielles Anwendungsgebiet der Galvanisierung. Deren Vorzüge sind in der Praxis bewährt.
Die angewandten und bekannten Vafergalvanisiervorrichtungen Vorrichtungen, die den Stand der Technik darstellen, sind solche wie sie beispielhaft mit der Figur 1 beschrieben wird.The electroplating technology is well known, has a wide range of applications and need not be dealt with here.
Vafer plating technology, on the other hand, is a special field of galvanization. Their advantages are proven in practice.
The applied and known Vafergalvanisiervorrichtungen devices which represent the prior art, are as described by way of example with the figure 1.

Problematisch ist generell bei den bekannten Vafergalvanisiervorrichtungen der Abdichtungsbereich des Galvanisierungsbades zwischen Vaferoberseite und Vaferunterseite.
Die Abdichtung erfolgt üblicherweise mittels einem Abdichtungsring 3. Die Abdichtung zum Elektrolytbad gemäß dem Beispiel der Figur 1 erfolgt mittels einem O-ring 18. Gleichzeitig hat der O-ring 18 eine Art Gleitspaltführungsfunktion im Gleitspalt 21. Die Montage des O-rings 18 kann jedoch, was nachteilig ist, nur im Trockenzustand erfolgen, somit bei leerem Galvanisationsbad. Bei Mehrfachmanipulation wird das System deshalb, wegen dem Trocken-Nass-Wechsel, zwangsläufig anfällig auf Sickerläckagen des Elektrolytes. Die vorhandenen Temperaturdifferenzen spielen bei den verschiedenen spezifischen Temperaturdehnungskoeffizienten der eingesetzten Vorrichtungselemente eine bedeutende Rolle. Die erforderliche 100%-ige Dichtesicherheit verursacht, deshalb im Falle von Undichtheiten im Vorrichtungssystem, Prozessunterbrechungen. The problem is generally in the known Vafergalvanisiervorrichtungen the sealing region of the plating bath between Vaferoberseite and Vaferunterseite.
The sealing to the electrolyte bath according to the example of Figure 1 by means of an O-ring 18. At the same time, the O-ring 18 has a kind of Gleitspaltführungsfunktion in the sliding gap 21. The assembly of the O-ring 18, however , which is disadvantageous, only in the dry state, thus in an empty Galvanisationsbad. In multiple manipulation, the system is therefore due to the dry-wet change, inevitably prone to leaching of the electrolyte. The existing temperature differences play an important role in the various specific thermal expansion coefficients of the device elements used. The required 100% density safety causes process interruptions in the event of leaks in the fixture system.

Bekanntlich leidet dann, wie bei allen Prozessunterbrechungen, während dem Wiederanfahren die Produktqualität der ersten Produktpartie.
Eine nachhaltig, gleichbleibende Produktqualität ist dann nicht gegeben und prozentual betrachtet, schlagen beim kostspieligen Rohmaterial der vorliegenden zu galvanisierenden Vafer, Fehlproduktionen, von der Kostenseite her, stark zu Buche. Eine insbesondere Schwachstelle, wie in Figur 1 zum Stande der Technik gezeigt, ist der Seitenspielraum zwischen dem Abdichtungsring 3 und der Vorrichtungsbasis 1. Die Abdichtung zwischen diesen Vorrichtungsteilen mittels dem relativ grossdimensionierten O-ring 18 hat den Nachteil,dass der O-ring zum rollen neigt oder beim Hin- und Hermanipulieren des Abdichtungsrings 3, bis zur dessen Fixierung in der finalen Position, Reibungen der O-Ringoberfläche zur Beschädigung des Rings führen können, mit der Folge, von danach auftretenden Elektrolytläckagen. Generell gesehen, ist der Seitenspielraum,Spalt 21, zwischen dem Abdichtungsring 3 und der Vorrichtungsbasis 1 eine Systemschwachstelle.
Das Einsetzen des O-rings 18 ist darüberhinaus kompliziert, weil der O-ring 18 beim Einfügen in dessen Ringnut stark gestreckt werden muß und es auch bei dieser Manipulation zur O-ringbeschädigung kommen kann.As is known, then, as with all process interruptions, during the restart, the product quality of the first product section suffers.
A sustainable, consistent product quality is then not given and considered in percentage terms, the costly raw material of the present to be galvanized Vafer, defective production, from the cost side, to book. A particular weak point, as shown in Figure 1 prior art, is the side clearance between the sealing ring 3 and the device base 1. The seal between these device parts by means of the relatively large-sized O-ring 18 has the disadvantage that the O-ring to roll tends to cause damage to the ring during or after manipulation of the seal ring 3 until its fixation in the final position, with consequent electrolyte leakage. Generally speaking, the side clearance, gap 21, between the seal ring 3 and the device base 1 is a system weakness.
The insertion of the O-ring 18 is also complicated because the O-ring 18 must be greatly stretched when inserted into the annular groove and it can also come in this manipulation to O-ring damage.

Aufgabe der Erfindung war es deshalb eine spezielle Galvanisierungsvorrichtung zu entwickeln, die es gestattet, das Galvanisieren von Vaferscheiben derart zu gestalten, dass eine sichere Abdichtung inbezug auf das Elektrolytdurchsickern zwischen dem Vaferoberbereich und demVaferunterbereich gegeben ist. Des weiteren muß die Montage des Abdichtungssystems einfach manipulierbar und derart konzipiert sein, dass die Passgenauigkeit zwischen den einzelnen Vorrichtungselementen untereinander derart harmoniert, dass keine Seitenspielräume, wie Spalt 21, vorhanden sind. Ferner müssen die elastischen eigentlichen Abdichtungselemente, nämlich elastische O-ringe, nur in vertikaler Linie positionierbar sein, um Reibungsmöglichkeiten auf der O-ringoberfläche von vornherein auszuschliessen. The object of the invention was therefore a special galvanizing device to develop, which allows the galvanization of Vaferscheiben so to Make sure that a secure seal in relation to the electrolyte leakage between the upper wafer area and the lower wafer area. Of further, the installation of the sealing system must be easy to manipulate and be designed so that the fit between the individual Device elements harmonized with each other so that no Side margins, such as gap 21, are present. Furthermore, the elastic actual sealing elements, namely elastic O-rings, only in vertical Line can be positioned to friction on the O-ring surface of to exclude at the outset.

Die O-ringe sollen im Zuge der Vorrichtungsmontage nach derem Einlegen in die vorgesehenen Räume, nicht mehr mechanisch tangiert werden.The O-rings are in the course of device assembly after derem inserting into the provided spaces, no longer be mechanically affected.

Im Zuge der inzwischen gängigen 300 mm Durchmesser Vafertechnologie ist es erforderlich, dass die Passgenauigkeiten der Galvanisiervorrichtungselemente zueinander derart harmonieren, dass Seitenverkantungen wegen eventuell vorhandener Seitenspielräume, wie beispilsweise in Figur 1, Spalt 21, ausgeschlossen sind. Es ist unbedingt erforderlich, dass die O-ringpositionierung durch leichtes Einlegen in die Einlegemulden problemlos vonstatten geht. Dies muß selbstverständlich auch für andere Vaferdurchmesser gewähsleistet sein. Insbesondere aber waren die herausfordernden technologischen Prozessbedingungen bei der neuen Generation von Vaferscheiben mit einem Durchmesser von 300 mm zu erfüllen, wo die Vorrichtungspassgenauigkeit der einzelnen Vorrichtungselemente zueinander von besonderer Bedeutung ist. Die Passgenauigkeit von Abdichtungsring 3 samt integriertem O-Ring, beziehungsweise O-ringen, im Verhältnis zur Vorrichtungsbasis, muß auch unter Berücksichtigung der dimensionsbedingten höheren Material-Temperaturdehnungsschwankungen muß derart gewährleistet sein, dass ein Verschleiß des Abdichtungssystems und insbesondere der O-Ringe samt O-ringpassagen absolut minimiert ist.In the course of the meanwhile common 300 mm diameter vafer technology it is Requires that the accuracy of fit of Galvanierierrichtungselemente harmonize with each other so much that Seitenverkantungen because of possibly existing side margins, as for example in Figure 1, gap 21, excluded are. It is imperative that the O-ring positioning by easily inserting into the recesses easily proceeds. This must of course be gewähsleistet for other Vaferdurchmesser. In particular, however, were the challenging technological Process conditions in the new generation of Vaferscheiben with a Diameter of 300 mm where the device accuracy of the individual device elements to each other is of particular importance. The Fitting accuracy of sealing ring 3 with integrated O-ring, Or O-rings, in relation to the device base, must also under Consideration of the dimension-related higher material temperature expansion fluctuations must be guaranteed such that a Wear of the sealing system and in particular the O-rings and O-ring passages absolutely minimized.

Die Aufgabe wurde gelöst durch eine Galvanisiervorrichtung zum galvanisieren von Vaferscheiben, bestehend aus; einer Vorrichtungsbasis mit Innengewinde 1, einer überwurfmutter 4, zur Befestigung und Fixierung des Gesamtsystems der Vorrichtung, einem Adapter 5, als Aufnahmebasis für die zu galvanisierenden Vaferscheiben und Abdichtungselementen zum Abdichten des Elektrolytbereichs, die dadurch gekennzeichnet ist;
dass die Galvanisiervorrichtung einen oberen Abdichtungsring (3) besitzt, an dessen beiden Enden je eine O-ringeinlegemulde situiert ist, für die einlegbaren O-ringe (6), am oberen Ende des Abdichtungsrings (3) und O-ring (7), am unteren Ende des Abdichtungsrings (3) und die Galvanisiervorrichtung ein weiteres unteres Abdichtungselement (10) besitzt, in der Form eines Rings oder einer Rundscheibe, mit jeweilig einer als Gegenpart zum oberen Abdichtungsring (3) positionierten Kontermulde für die Einlegbarkeit des unteren O-rings (7) und der Abdichtungsring (3) und die Abdichtungselemente (10), seitenspielraumfrei in der Basis (1) beziehungsweise dem Zwischenteil (16) eingesetzt, bei eingelegten O-ringen (6) und (7), gegeneinander gedrückt werden, wodurch ein in sich geschlossener, elektrolytdichter Bereich vorhanden ist.The object was achieved by a galvanizing device for galvanizing wafer wheels, consisting of; an internally threaded device base 1, a union nut 4, for fixing and fixing the entire system of the device, an adapter 5, as a receiving base for the wafer disks to be plated and sealing members for sealing the electrolyte portion, which is characterized;
in that the electroplating device has an upper sealing ring (3), at both ends of which an O-ring inserting recess is situated, for the insertable O-rings (6), at the upper end of the sealing ring (3) and O-ring (7) lower end of the sealing ring (3) and the electroplating device has a further lower sealing element (10), in the form of a ring or a round disc, each with a counterpart to the upper sealing ring (3) positioned for the insertion of the lower O-rings ( 7) and the sealing ring (3) and the sealing elements (10), use of clearance in the base (1) or the intermediate part (16) used, with inserted O-rings (6) and (7) are pressed against each other, creating a in Closed, electrolyte-tight area is present.

Das Andrücken des unteren Abdichtungsrings gegen den oberen Abdichtungsring kann alternativ, mittels der Überwurfmutter 4 erfolgen wenn der Vorrichtungsboden, mit zwischengeschalteten elastischen Pufferelementen 8, wie im Beispiel der Figur 2 und 3 gezeigt, als Druckkonterpart für den Abdichtungsring 10 dient. Sicherheitshalber ist in solchem Falle eine Faltenbalgabdichtung zwischen Abdichtungsring 10 und Vorrichtungsbasis geschaltet.The pressing of the lower sealing ring against the upper Sealing ring may alternatively be done by means of the nut 4 when the Device bottom, with intermediate elastic buffer elements 8, such as in the example of Figures 2 and 3, as Druckkonterpart for the sealing ring 10 serves. For safety's sake, a bellows seal is in such case connected between sealing ring 10 and device base.

Der Faltenbalg kann beliebig,vertikal oder horizontal eingesetzt werden und besteht in der Regel aus Gummi oder gummiertem Textilmaterial. The bellows can be used arbitrarily, vertically or horizontally and is usually made of rubber or rubberized textile material.

Das Faltenbalgabdichtungssystem kann, wenn der Faltenbalg 9 im Doppel konzipiert ist und dadurch eine Kammer bildet, auch als Kanal 14 für pneumatische oder hydraulische Druckmedien zum Andrücken des unteren Abdichtungsrings 10 dienen, wie dies in Figur 6 gezeigt wird.The bellows sealing system can, when the bellows 9 in the double is designed and thus forms a chamber, also as a channel 14 for pneumatic or hydraulic pressure media for pressing the lower seal ring 10th serve as shown in Figure 6.

Beim rundflächigen unteren Abdichtungsring 10 als Alternative zum offenen Abdichtungsring 10, kann das Andrücken desselben gegen den oberen Abdichtungsring 3, wie dies in Figur 7 gezeigt wird, unter Anwendung einer flexiblen Membran 17, alternativ zu Figur 4, mittels pneumatischen beziehungsweise hydraulischen Druckmedien erfolgen.When round lower sealing ring 10 as an alternative to the open Sealing ring 10, the pressing of the same against the upper Sealing ring 3, as shown in Figure 7, using a flexible membrane 17, as an alternative to Figure 4, by means of pneumatic or hydraulic pressure media done.

Weitere Kombinationen sind unter Anwendung der Scheibengalvanisiervorrichtung, gemäß der Erfindung, zum Beispiel wie dies in Figur 5 gezeigt wird, mit anderer Raumkonfiguration möglich.Other combinations are using the disc plating device, according to the invention, for example as shown in FIG. 5, possible with other room configuration.

Die nachfolgenden Figuren beschreiben die Erfindung beispielhaft im Detail. Zwecks ausführlicher Erläuterung der Erfindungshöhe wird mit Figur 1 beispielhaft eine Vorrichtung zum bisherigen Stand der Technik gezeigt.The following figures describe the invention by way of example in detail. For a detailed explanation of the invention height is exemplified with FIG a device of the prior art shown.

Die Figuren 2 bis 7 beschreiben beispielhaft die verschiedenen erfinderischen Vorrichtungsvarianten.

Fig.1
zeigt vergleichsweise beispielhaft den Stand der Technik einer Vafergalvanisiervorrichtung B.
Zur Abdichtung des Elektrolytbereichs und gleichzeitiger Zentrierung der Vaferscheibe wird ein O-ring 18 eingesetzt der, des weiteren, den Spalt 21 des Montagesystems schliesst.
Durch das Auf- und Abbewegen während der Montage der Vorrichtungselemente, insbesondere des Abdichtungsrings 3, besteht die Gefahr der Bildung von Reibungsrillen am O-ring 18 und damit verbunden die Gefahr des Durchsickerns von Elektrolytflüssigkeit. Des weiteren ist der Seitenbewegungsspielraum im Spalt 21 zu groß um die Randererfassung der Vaferscheibe exakt gleichbeibend galvanisieren zu können. Der Vaferscheibenzentrierung wird somit nicht gut genug vollzogen. Die Montage des O-rings 18 in den Nut des Zwischenteils 16 ist nicht komplikationslos, da um den O-ring 18 in die Nut einzusetzen, muß der O-ring stark gestreckt werden. Dadurch besteht die Gefahr der Deformierung des O-Rings und gegebenenfalls, der Beschädigung des O-Rings durch Reibungsrillen.
Fig.2
zeigt die Scheibengalvanisiervorrichtung A, beispielhaft gemäß der Erfindung, mit dem Abdichtungsring 3, der an deren beiden Enden mit je einer Mulde versehen ist. In diesen Mulden sind die O-ringe 6 und 7 eingelegt, beziehungsweise kann der O-ring 7 in die Mulde von Abdichtungsring oder Abdichtungsscheibe 10 gelegt werden. Der Abdichtungsring 3 wird seitenspielraumfrei und exakt zentriert an das Zwischenteil 16 montiert.
Gegenpart zum Abdichtungsring 3, zur Abdichtung des Elektrolytbereichs sind der untere Abdichtungsring beziehungsweise die Abdichtungsscheibe 10, mit im Randbereich situierter O-ringmulde, jeweils kontrabezogen zur unteren Ringmulde des Abdichtungsrings 3.
Im Falle der Anwendung eines unteren Abdichtungsrings 10, ist dieser mittels einem elastischen Faltenbalg, zwecks der Elektrolytabdichtung, mit der Vorrichtungsbasis verbunden. Im Falle von Figur 2, mit einem Faltenbalg 9 in waagerechter Position. Zwischen Abdichtungsring 10 und der Vorrichtungsbasis 1 ist ein pufferndes, elastisches Ringelement 8 situiert,zum Zwecke der Spannungsnivelierung des gesamten Vorrichtungselementesystems.
Fig.3
zeigt eine Variante der Vorrichtungsgestaltung C, wie in Figur 2, unter Anwendung eines offenen unteren Abdichtungsrings 10.
Der Abdichtungsring 10 ist mittels einem senkrechten Faltenbalg 9 mit der Vorrichtungsbasis verbunden um die Elektrolytdichtheit zu gewähr leisten. Der elastische Pufferring 8 ist entsprechend in Stützformation höher und gestattet zusammen mit dem senkrechten Faltenbalg eine, für Bedarfsfälle, höhere Vorrichtungsgestaltung.
Bei dieser Vorrichtungsvariante erfolgt der Elementeverbunddruck auf die beiden O-ringe 6 und 7 mittels der überwurfmutter 4.
Fig.4
zeigt eine Vorrichtungsvariante D, unter Anwendung einer geschlossenen vollflächigen Abdichtungsscheibe 10, als Konterpart zum Abdichtungsring 3. Der O-ring 7 wird vorzugsweise in die O-ringmulde der Abdichtungsscheibe 10 eingelegt. Zum Abfedern der Andruckkraft auf die Scheibe10, kommt ein abpufferndes elastisches Ringelement 12 zum Einsatz.
Das Andrücken der Abdichtungsscheibe 10 an den Abdichtungsring 3 mit den einliegenden O-ringen 6 und 7 erfolgt mittels einer Druckvorrichtung 11, die mechanisch, pneumatisch oder hydraulisch betrieben werden kann.
Fig.5
zeigt eine Vorrichtungsvariante E,als Kombination der Figuren 3 und 4 mit einem Höhenvariationszwischenelement 13 zur Höhendimensions variation der Gesamtvorrichtung.
Fig.6
zeigt eine Vorrichtungsvariante F mit beiderseitigem Faltenbalg 9, der in dieser Form einen geschlossenen Kanal 14 bildet, der neben der Funktion als Elektrolytabdichtungselement, gleichzeitig einen Kanal 14 darstellt ,für die Zuleitung der Hydraulik- beziehungsweise Pneumatikmedien als Druckmedien beim regulierten Andrücken des unteren Abdichtungsrings 10, an den oberen Abdichtungsring 3.
Diese Variante hat den Vorteil, dass die beiden O-Ringe 6 und 7, nach deren Vorfixierung, keiner weiteren mechanischen Manipulation unterworfen sind, insbesondere, weil das O-ringesystem stets in vertikaler Richtung belastet wird.
Der Abdichtungsdruck auf die beiden O-Ringe 6 und 7 erfolgt in diesem Falle dynamisch. Die O-ringe unterliegen somit keiner Reibungsbelastung.
Ein weiterer Vorteil ist es, dass bei einer Prozess-änderung oder einem sonstigen erforderlichen Prozessunterbruch die O-ringe leicht dem System entnommen werden und wieder leicht eingesetzt werden können. Der O-ringeverschleiß ist damit sehr gering.
Diese Variante trägt noch mehr zur Abdichtungssicherheit des Elektrolytmediums bei.
Fig.7
zeigt eine Vorrichtungsvariante G, eine Kombinationsvariante auf der Basis der Figuren 2 und 6.
Durch die Anwendung einer Flächenmembran 17 wird der Druck auf die Bodenfläche der Abdichtungsscheibe 10 am gleichmässigsten übertragen. Damit wird die schonendste und gleichmässigste Druckverteilung einwirkend auf die beiden Abdichtungsringe 6 und 7 erreicht. Hinzu kommt noch die puffernde Wirkung der elastischen Elemente 8. Alle Elemente der gesamtem Galvanisiervorrichtung werden somit ideal zentrisch verbunden und dynamisch verspannt.
Die neue Scheibengalvanisiervorrichtung stellt einen bedeutenden Zugewinn zum technischen Fortschritt dar. Durch die erzielbare Minimierung von Fehlproduktionen durch die optimale zentrische Randerfassung der zu galvanisierenden Vafer wird auch ein eheblicher Beitrag zur Umweltentlastung geleistet.FIGS. 2 to 7 describe, by way of example, the various inventive device variants.
Fig.1
shows by way of example the prior art of a Vafergalvanisiervorrichtung B.
For sealing the electrolyte region and simultaneous centering of the Vaferscheibe an O-ring 18 is used which, further, closes the gap 21 of the mounting system.
By moving up and down during assembly of the device elements, in particular the sealing ring 3, there is the risk of the formation of friction grooves on the O-ring 18 and, associated therewith, the risk of leakage of electrolyte fluid. Furthermore, the lateral movement clearance in the gap 21 is too large to be able to galvanize the edge detection of the wafer exactly exactly the same. The Vaferscheibenzentrierung is thus not performed well enough. The assembly of the O-ring 18 in the groove of the intermediate part 16 is not without complications, since to use the O-ring 18 in the groove, the O-ring must be stretched. As a result, there is a risk of deformation of the O-ring and possibly, the damage of the O-ring by friction grooves.
Fig.2
shows the Scheibengalvanisiervorrichtung A, for example according to the invention, with the sealing ring 3, which is provided at both ends with a respective trough. In these wells, the O-rings 6 and 7 are inserted, or the O-ring 7 can be placed in the trough of sealing ring or sealing disc 10. The sealing ring 3 is mounted on the intermediate part 16 with no clearance and exactly centered.
Counterpart to the sealing ring 3, for sealing the electrolyte region are the lower sealing ring or the sealing disc 10, with located in the edge region O-ring trough, in each case contra-related to the lower annular recess of the sealing ring. 3
In the case of using a lower sealing ring 10, it is connected to the device base by means of an elastic bellows for the purpose of electrolyte sealing. In the case of Figure 2, with a bellows 9 in a horizontal position. Between the sealing ring 10 and the device base 1 is located a buffering elastic ring member 8 for the purpose of leveling the entire device element system.
Figure 3
shows a variant of the device design C, as in Figure 2, using an open lower sealing ring 10th
The sealing ring 10 is connected by means of a vertical bellows 9 with the device base to afford the Elektrolydichteichtheit granted. The elastic buffer ring 8 is correspondingly higher in support formation and, together with the vertical bellows, allows for a higher device design if required.
In this device variant, the element composite pressure on the two O-rings 6 and 7 by means of the union nut 4th
Figure 4
shows a device variant D, using a closed full-surface sealing disc 10, as a counterpart to the sealing ring 3. The O-ring 7 is preferably inserted into the O-ring recess of the sealing disc 10. To cushion the pressure force on the disc 10, a buffering elastic ring element 12 is used.
The pressing of the sealing disc 10 to the sealing ring 3 with the inserted O-rings 6 and 7 by means of a pressure device 11, which can be operated mechanically, pneumatically or hydraulically.
Figure 5
shows a device variant E, as a combination of Figures 3 and 4 with a Höhenvariationszwischenelement 13 for height dimension variation of the overall device.
Figure 6
shows a device variant F with bilateral bellows 9, which forms a closed channel 14 in this form, which also represents a channel 14 in addition to the function as electrolyte sealing element, for the supply of hydraulic or pneumatic media as pressure media in the regulated pressing of the lower sealing ring 10, to the upper sealing ring 3rd
This variant has the advantage that the two O-rings 6 and 7, after their prefixing, are not subject to any further mechanical manipulation, in particular because the O-ring system is always loaded in the vertical direction.
The sealing pressure on the two O-rings 6 and 7 takes place dynamically in this case. The O-rings are thus subject to no friction.
Another advantage is that in a process change or other required process interruption, the O-rings are easily removed from the system and can be easily reused. The O-ring wear is thus very low.
This variant contributes even more to the sealing safety of the electrolyte medium.
Figure 7
shows a device variant G, a combination variant on the basis of Figures 2 and 6.
Through the use of a surface membrane 17, the pressure on the bottom surface of the sealing disc 10 is transmitted most uniformly. Thus, the gentlest and most uniform pressure distribution is achieved acting on the two sealing rings 6 and 7. In addition, there is the buffering effect of the elastic elements 8. All elements of the entire galvanizing are thus ideally connected centric and dynamically braced.
The new Scheibengalvanisiervorrichtung represents a significant gain to technical progress. By the achievable minimization of defective production by the optimal centric edge detection of the to be plated Vafer also makes a significant contribution to environmental relief.

Die Produktion von Einkristallsilizium beziehungsweise Einkristallgermanium oder anderer Halbleitereinkristallvarianten ist energieintensiv und im Zusammenhang mit der einhergehenden Zwischenproduktherstellung sind intensive Entsorgungsmasnahmen zur Umweltentlastung beim Anfall von Fehlproduktionen erforderlich.The production of single crystal or single crystal germanium or other semiconductor single crystal variants is energy intensive and related with the associated production of intermediate products are intensive disposal measures to relieve the burden on the production of defective productions.

Die Erfindungshöhe besteht insbesondere in der vertikalen Systemmontage der erfinderischen Vorrichtung. Dadurch erfolgt der Spannungsdruck der montierten Systemelemente vertikal-geradlinig. Dementsprechend kann die Montage der einzelnen Elemente nach dem Einlegeprinzip erfolgen.The inventive height consists in particular in the vertical system assembly of innovative device. As a result, the voltage pressure of the mounted System elements vertical-rectilinear. Accordingly, the assembly of the individual elements according to the insertion principle.

Durch die exakte vertikalzentrierte Montage der Elemente erfolgt die Randgalvanisierung der Vafer gleichbleibend und fehlerfrei. Die Fehlproduktionsrate und damit die Stückproduktivität wird erheblich gesteigert.Due to the exact vertical-centered mounting of the elements, the edge galvanization takes place the Vafer consistent and error free. The bad production rate and thus the piece productivity is increased considerably.

Die mit den Figuren dargestelltenten Beispiele sind als solche zu verstehen. Die Erfindung birgt weitere beispielhafte Anwendungsvarianten in sich und zwar generell in der Galvanisationstechnik von flächigen Substraten. The examples presented with the figures are to be understood as such. The Invention entails further exemplary application variants in and indeed generally in the electroplating technique of flat substrates.

BezugszeichenlisteLIST OF REFERENCE NUMBERS

11
Vorrichtungsbasis (Substrataufnahme)Device base (substrate receiving)
22
Vafer (Galvanisierungssubstrat)Vafer (plating substrate)
33
Abdichtungsringsealing ring
44
überwurfmutterunion nut
55
Adapteradapter
66
Oberer O-ringUpper O-ring
77
Unterer O-ringLower O-ring
88th
Elastisches Pufferelement als Stütze bei HöhenvariationElastic buffer element as a support for height variation
99
Faltenbalgbellow
1010
Unterer Abdichtungsring beziehungsweise FlächeLower sealing ring or surface
1111
Druckelementpressure element
1212
Elastisches Element wie 8Elastic element like 8
1313
HöhenvariationszwischenelementHeight variation intermediate element
1414
DruckmedienkanalMedia channel
1515
Doppelter FaltenbalgDouble bellows
1616
Zwischenteilintermediate part
1717
Elastische MembranElastic membrane
1818
O-ring zum Stand der TechnikO-ring to the prior art
1919
Druckausübendes MediumPressurizing medium
2020
Stromzuführungpower supply
2121
Spalt zwischen 1 und 3Gap between 1 and 3
AA
Galvanisiervorrichtung gemäß dem Stande der TechnikElectroplating apparatus according to the prior art
B bis GB to G
Erfinderische Varianten der GalvanisiervorrichtungInventive variants of the galvanizing device

Claims (7)

Galvanisiervorrichtung zum Galvanisieren von Vaferscheiben, bestehend aus; Vorrichtungsbasis mit Innengewinde (1), einer überwurfmutter (4), zur Befestigung und Fixierung des Gesamtsystems der Vorrichtung, einem Adapter (5), als Aufnahmebasis für die zu galvanisierenden Vaferscheiben und Abdichtungselementen zum Abdichten des Elektrolytbereichs,
dadurch gekennzeichnet, dass;
die Galvanisiervorrichtung einen oberen Abdichtungsring (3) besitzt, an dessen beiden Enden je eine O-ringeinlegemulde situiert ist, für die einlegbaren O-ringe (6), am oberen Ende des Abdichtungsrings (3) und O-ring (7), am unteren Ende des Abdichtungsrings (3) und die Galvanisiervorrichtung ein weiteres unteres Abdichtungselement (10) besitzt, in der Form eines Rings oder einer Rundscheibe, mit jeweilig einer als Gegenpart zum oberen Abdichtungsring (3) positionierten Kontermulde für die Einlegbarkeit des unteren O-rings (7) und der Abdichtungsring (3) und die Abdichtungselemente (10), seitenspielraumfrei in der Basis (1) beziehungsweise dem Zwischenteil (16) eingesetzt, bei eingelegten O-ringen (6) und (7), gegeneinander gedrückt werden, wodurch ein in sich geschlossener, elektrolytdichter Bereich vorhanden ist. Electroplating apparatus for galvanizing wafer rolls, comprising; An internally threaded device base (1), a union nut (4) for fixing and fixing the entire system of the device, an adapter (5), a receiving base for the wafer disks to be plated and sealing members for sealing the electrolyte portion,
characterized in that ;
the plating device has an upper sealing ring (3), at both ends of which an O-ring insertion recess is situated, for the insertable O-rings (6), at the upper end of the sealing ring (3) and O-ring (7), at the lower end End of the sealing ring (3) and the electroplating device has a further lower sealing element (10), in the form of a ring or a round disc, each with a counterpart to the upper sealing ring (3) positioned counter-recess for the insertion of the lower O-ring (7 ) and the sealing ring (3) and the sealing elements (10), use of clearance in the base (1) or the intermediate part (16), with inserted O-rings (6) and (7) are pressed against each other, creating a in itself closed, electrolyte-tight area is present. Galvanisiervorrichtung, nach Anspruch 1, dadurch gekennzeichnet, dass das Gegeneinanderdrücken eines der Abdichtungselemente (10) gegen den Abdichtungsring (3), bei eingelegten O-ringen, mittels Anwendung von pneumatischen beziehungsweise hydraulischen Drucksystemen erfolgt.Electroplating apparatus, according to claim 1, characterized in that the pressing against one another of the sealing elements (10) against the sealing ring (3), with inserted O-rings, by means of pneumatic or hydraulic pressure systems. Galvanisiervorrichtung, nach den Ansprüchen 1 und 2,
dadurch gekennzeichnet, dass bei Anwendung der pneumatischen oder hydraulischen Drucksysteme unter Anwendung eines Abdichtungsrings (10) mit eingelegtem O-ring (7) als unteren Konterpart zu Abdichtungsring (3), die Zuführung der Druckmedien der hydraulischen beziehungsweise pneumatischen Druckmedien, mittels einem Durchlaufkanal (14) bestehend aus einem abdichtenden Doppelfaltenbalg (15) erfolgt.Electroplating apparatus according to claims 1 and 2,
characterized in that when using the pneumatic or hydraulic pressure systems using a sealing ring (10) with inserted O-ring (7) as a lower counterpart to seal ring (3), the supply of the pressure media of the hydraulic or pneumatic pressure media, by means of a passage channel (14 ) consisting of a sealing double bellows (15). Galvanisiervorrichtung, nach den Ansprüchen 1 und 2,
dadurch gekennzeichnet, dass bei Anwendung der pneumatischen Drucksysteme unter Anwendung einer Abdichtungsscheibe (10) mit eingelegtem O-ring (7) als unteren Konterpart zu Abdichtungsring (3), die Zuführung der Druckmedien der hydraulischen beziehungsweise pneumatischen Druckmedien auf eine flexible Membran (17), flächenbezogen erfolgt, wodurch der Abdichtungsring (3) und die Abdichtungsscheibe (10) dynamisch und intergral gleichmässig gegeneinander gedrückt werden.Electroplating apparatus according to claims 1 and 2,
characterized in that when using the pneumatic pressure systems using a sealing disc (10) with inserted O-ring (7) as a lower counterpart to sealing ring (3), the supply of the pressure media of the hydraulic or pneumatic pressure media on a flexible membrane (17), surface-related, whereby the sealing ring (3) and the sealing disc (10) are pressed against each other dynamically and intergral uniformly. Galvanisiervorrichtung, nach den Ansprüchen 1, 3 und 4,
dadurch gekennzeichnet, dass die regulierte Druckmedienzufuhr mittels einem Regelaggregat erfolgt, das die O-ringbelastung derart berücksichtigt, dass der O-ring nicht deformiert wird wodurch eine optimale Abdichtung gewährleistet ist. Electroplating apparatus according to claims 1, 3 and 4,
characterized in that the regulated pressure medium supply by means of a control unit, which takes into account the O-ring load such that the O-ring is not deformed whereby an optimal seal is ensured. Galvanisiervorrichtung, nach Anspruch 1, dadurch gekennzeichnet, dass Stütz-Pufferelemente (8) und (12) einsetzbar sind, die die Belastung der O-ringe beim Verspannen abfedern und eine höhendifferenzierte Vorrichtungsgestaltung begünstigen.Electroplating apparatus according to claim 1, characterized in that support buffer elements (8) and (12) can be inserted, which cushion the loading of the O-rings during bracing and favor a height-differentiated device design. Galvaniservorrichtung, nach Anspruch 1, dadurch gekennzeichnet, dass, bei den variablen und differenten Vorrichtungsgestaltungsmöglichkeiten, Faltenbalgsysteme (9) zur Abdichtung des Elektrolytbereichs einsetzbar sind.Galvanizer device according to claim 1, characterized in that , in the variable and different device design options, bellows systems (9) are used to seal the electrolyte region.
EP04016833A 2003-07-19 2004-07-16 Apparatus for electroplating wafers Active EP1510601B9 (en)

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DE10333068A DE10333068A1 (en) 2003-07-19 2003-07-19 Device including sealing rings, a screw cap, an elastic element, a siphon, and O-rings useful for electroplating conductive and metallized nonconductive plates
DE10333068 2003-07-19

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JP6713916B2 (en) * 2016-12-01 2020-06-24 株式会社荏原製作所 Substrate holder, plating apparatus, and substrate holder manufacturing method
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CN100339511C (en) 2007-09-26
CN1614100A (en) 2005-05-11
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CA2474830A1 (en) 2005-01-19
DE502004000318D1 (en) 2006-04-27

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