EP1505733A2 - Schutzelement für elektronische Bauteile und integrierte Schaltungen - Google Patents

Schutzelement für elektronische Bauteile und integrierte Schaltungen Download PDF

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Publication number
EP1505733A2
EP1505733A2 EP04291656A EP04291656A EP1505733A2 EP 1505733 A2 EP1505733 A2 EP 1505733A2 EP 04291656 A EP04291656 A EP 04291656A EP 04291656 A EP04291656 A EP 04291656A EP 1505733 A2 EP1505733 A2 EP 1505733A2
Authority
EP
European Patent Office
Prior art keywords
transistor
active
active element
power
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP04291656A
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English (en)
French (fr)
Other versions
EP1505733A3 (de
Inventor
Jean-Christophe Crebier
Christian Schaeffer
Jean-Paul Ferrieux
Jean Barbaroux
Fissal Alkayal
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Institut Polytechnique de Grenoble
Original Assignee
Institut Polytechnique de Grenoble
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institut Polytechnique de Grenoble filed Critical Institut Polytechnique de Grenoble
Publication of EP1505733A2 publication Critical patent/EP1505733A2/de
Publication of EP1505733A3 publication Critical patent/EP1505733A3/de
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0826—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in bipolar transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage

Definitions

  • the invention relates to the field of power electronics and more precisely the voltage protection of an active component of power.
  • Power electronics is an effective way to convert and control electrical energy whose applications never stop to expand. Increasing the reliability of conversion systems is an important point for the development of the electronics of power. Semiconductor elements sometimes appear as critical because fragile, especially in short times - breakdown phenomena, less than a few microseconds - where the conventional protections are inoperative.
  • the invention aims to remedy the disadvantages of the systems classics.
  • the invention seeks to meet the need for protection ultrafast active power components against overvoltages.
  • the protection device for electronic component of integrated power comprises an element active equipped with at least two power inputs and one input command and integrated with the component to be protected, and an element of overvoltage control connected to a control input of the active element to control the conduction of the element active when the voltage across the device is greater than one predetermined threshold.
  • control element comprises a diode avalanche controlled.
  • the impedance of the protective device in case overvoltage is lower than that of a controlled avalanche diode classic high voltage. Tension is better stabilized and risk component damage is reduced.
  • the avalanche diode Controlled can be of low caliber in current and low cost.
  • control element comprises a resistance mounted parallel to the controlled avalanche diode.
  • the active element comprises at least one bipolar transistor.
  • the element of control is mounted between the collector and the base of an NPN transistor or between the base and the collector of a PNP transistor.
  • the bipolar transistor may comprise two bases.
  • the active element comprises at least one isolated gate transistor.
  • the active element comprises at least one MOS transistor.
  • said element of control includes a controlled avalanche diode mounted between the drain and the grid and another controlled avalanche diode mounted between the gate and the source of the insulated gate transistor.
  • the device comprises a mounted resistance parallel to each controlled avalanche diode.
  • the active element comprises a J-FET transistor, the control element being mounted in series with J-FET transistor, the gate of the J-FET transistor being connected to the other terminal of the control element.
  • said device is made from at least one cell of the electronic component of power equipped with a plurality of cells arranged in parallel.
  • the invention also proposes an integrated circuit comprising at least one active power component and a device integrated protection with said active component and comprising an element active equipped with at least two power inputs and one input control, and a control element against overvoltage, and connected to a control input of the active element to control the setting conduction of the active element when the voltage across the terminals of device is greater than a predetermined threshold.
  • said protection device and said component active power are associated with the same cooling means.
  • the same radiator can serve both the protection device and to the active power component.
  • the active element of the device protection enjoys excellent cooling due to the high heat exchange surface common to the device of protection and active power component. We can therefore foresee a active element of the small protective device and thus offering improved response dynamics.
  • said active element comprises an element of the active power component. We can serve as an element of the active component of power for its own protection.
  • the active component is a bipolar transistor with insulated gate provided with a internal bipolar transistor and that said active element comprises said internal bipolar transistor.
  • the component to be protected is thus used to achieve protection.
  • a bipolar transistor gate isolated is a four-layer component that can be modeled by a MOS transistor controlling a main bipolar transistor, a another bipolar transistor being arranged parallel to the transistor MOS. Here it is proposed to use said main bipolar transistor.
  • the power supply device can be based on multi-chip components associated inside a module.
  • the power supply device can be based on multi-chip components associated inside a module.
  • the invention proposes make several components with different functions but with some comparable constraints, namely the component of power to protect, the active element and the control element associated. This benefits from collective manufacturing processes power component and its protection.
  • the device is made from at least one cell of the electronic component of power equipped with a plurality of cells arranged in parallel. We can expect to use between 10 to 15% of cells to achieve the protection.
  • Such protection is applicable to most insulated gate components, such as MOSFET, IGBT, MBS or others, or non-insulated gate, bipolar type or other.
  • the device can be used with a power voltage continuous or alternative, depending on the field of application.
  • the device can be incorporated into all rectifiers and active inverters, in switching power supplies, in the training of electrical machines, in the management of energy distribution networks in consumer products, such as home appliances, multimedia, home automation, etc.
  • the device for protection 1 comprises a power switch 2 or active element, here a bipolar transistor NPN type and a control element 6.
  • the power switch 2 comprises a collector 3, a transmitter 4 and a base 5.
  • the control element 6 comprises an avalanche diode controlled 7 and 8 resistance built-in with the power 2 or performed in a discrete manner.
  • the avalanche diode controlled 7 comprises a cathode connected to the collector 3 and an anode connected to the base 5.
  • the resistor 8 is arranged parallel to the diode controlled avalanche 7.
  • a resistor 9 disposed between the base 5 and the transmitter 4 of the power switch 2 makes it possible to drop the base-emitter voltage and facilitates the blocking of the power 2 at the end of an overvoltage. Resistance 8 is optional if the protection device is not connected in series.
  • the current in the controlled avalanche diode 7 is denoted Id substantially equal to Ib, Ir being then negligible.
  • I e (ß + 1) I d .
  • the device viewed from the outside is a controlled avalanche super diode of (ß + 1) I d .
  • the power switch 2 increases the apparent current rating of the controlled avalanche diode 7 without it being the seat of additional loss. This is particularly advantageous for applications under high voltage, for example in the field of rail traction where the AC voltage exceeds 10 kV and is often 25 kV and where several transistor type components are put in series to be able to withstand said high voltage. .
  • the switch of power 2 is a bipolar transistor PNP type.
  • the element of command 6, devoid of resistance parallel to the avalanche diode 7, is mounted between the collector 4 and the base 5.
  • the operation is similar to that of the device of Figure 1.
  • the resistor 9 is disposed between the base 5 and the collector 3 of the power switch 2.
  • the switch of power 2 is an insulated gate transistor comprising a drain 11, a source 12 and a gate 13.
  • the control element 14 comprises two controlled avalanche diodes 15 and 16 and two resistors 17 and 18 integrated with the power switch 2.
  • the avalanche diode controlled 15 comprises a cathode connected to the drain 11 and an anode connected to the grid 13.
  • the resistor 17 is arranged parallel to the controlled avalanche diode 15.
  • the controlled avalanche diode 16 comprises a cathode connected to the gate 13 and an anode connected to the source 12.
  • the resistor 18 is arranged parallel to the diode controlled avalanche 16.
  • the resistors 17 and 18 serve for balancing in normal operating mode. Their values are such that the voltage V gs between the gate 13 and the source 12 is low enough to block the power switch 2. This results in very low losses.
  • the resistor 18 also serves to bias the controlled avalanche diode 15.
  • avalanche voltages respective controlled avalanche diodes 15 and 16 are such that the power switch 2 is on.
  • the current in the diode to controlled avalanche 15 is considerably lower than the current total passing through the protective device due to the gain offered by the power switch 2, the controlled avalanche diode 16 remaining blocked during normal operation of the protection. It results that the losses are concentrated in the power switch 2 and not in controlled avalanche diodes 15 and 16.
  • the diode controlled avalanche 16 allows to clip the gate-source voltage and protect the gate of the power switch 2.
  • the device for protection 1 includes a power switch 2 of the bipolar type NPN as in the embodiment of Figure 1.
  • Resistance 9 of low value is placed between base 5 and transmitter 4 of the power switch 2 to improve the response of the component and evacuate the charges from the base-emitter junction when the diode to controlled avalanche 7 is blocked.
  • the protection device 1 is associated with a component of power 19 to protect, here an IGBT transistor.
  • the component 19 can also be a bipolar transistor, a MOS transistor, a GTO transistor, etc.
  • Collectors and transmitters of power switch 2 and component 19 are connected respectively.
  • the protection device 1 and the component 19 are formed in the same integrated circuit.
  • the device protection 1 can then benefit from the cooling means of the component 19, which is particularly advantageous in that it is not necessary to provide specific cooling means for protection device.
  • the device for protection 1 comprises a control element 6 provided with a diode controlled avalanche 7 and a resistor 8 integrated and mounted in parallel.
  • the protection device 1 is nested with the component of power to be protected, here a bipolar transistor with insulated gate (IGBT) 20, the function of the active element of the protective device being provided by the power component to be protected itself.
  • IGBT insulated gate
  • the IGBT transistor 20 is shown in detail and comprises a collector 21, a transmitter 22 and a grating 23. More precisely, the IGBT transistor 20 is modeled electrically by a MOS transistor 24, a bipolar transistor PNP 25 and a transistor NPN bipolar 26.
  • the gate 23 forms the gate of the MOS transistor 24.
  • the collector 21 forms the collector of the bipolar transistor PNP 25.
  • the transmitter 22 forms the emitter of the NPN bipolar transistor 26.
  • the base 27 of the bipolar transistor PNP 25 is connected to the collector of the transistor bipolar NPN 26 and the drain of the MOS transistor 24.
  • the transmitter 22 is also connected to the collector of the bipolar transistor PNP 25 at the base of the bipolar NPN transistor 26 and the source of the MOS transistor 24. In other words, the base and emitter of the NPN bipolar transistor 26 are short-circuited.
  • the protection device 1 is mounted between the base 27 and the emitter 22, with the cathode of the controlled avalanche diode 7 connected to the base 27.
  • the controlled avalanche diode 7 begins to conduct a current Id equal to the current I b of the basic bipolar transistor PNP 25.
  • This embodiment does not require an active element additional and uses the bipolar transistor inherent in a IGBT transistor to clip the voltage.
  • the element active protective device is constituted here by a part of the component to protect itself. It is simply necessary when manufacturing of the integrated circuit to connect the base of the bipolar transistor internal of the IGBT transistor to the control element.
  • the transistor internal bipolar transistor IGBT forms the active element of the device protection.
  • the device for protection 1 comprises an active element 2 in the form of a transistor J-FET high voltage and a protective element 6 in the form of a controlled avalanche diode 7 whose avalanche voltage is low by example of the order of 2 to 3 volts.
  • Active element 2 and the diode controlled avalanche 7 are connected in series with the cathode of the diode controlled avalanche 7 connected to the source of the active element 2 and the anode of the controlled avalanche diode 7 connected to the gate of the active element 2 and to the circuit ground.
  • the protection device 1 is mounted parallel to a power component 19 to be protected, the drain of the power component 19 and the source of the active element 2 being connected and the source of the power component 19 being connected to the cathode of the controlled avalanche diode 7.
  • the losses in the diode at Controlled avalanche 7 are very weak and we can then use a current diode of low thermal dimensioning, for example 0.25 watt, very cheap.
  • the active element 2 is blocked and the diode controlled avalanche 7 slightly polarized. If the tension supply on the source of the active element 2 increases, the current increases and vice versa. So when the voltage across the protection device 1 increases, the current passing through the transistor JFET increases.
  • an integrated circuit portion comprises, on the same chip 28, the power component to protect 19, which can be of the MOSFET type, and the protection device 1. Rings of guard 29 are formed around the chip.
  • Hybrid integration fits applications multi-chip, where one of the chips will be dedicated to protection.
  • the chip of protection subject to the same constraints as power chips, can be part of the same module to offer, again, a high integration.
  • a protection device 30 is connected in parallel with a component to 31.
  • the protective device 30 includes a transistor bipolar 32 with two bases 33 and 34 arranged on one side and the other of the emitter 35.
  • a resistor 36 is mounted between the base 34 and the emitter 35.
  • a controlled avalanche diode 37 is mounted between the collector 38 and the base 33, with the cathode connected to the collector 38.
  • the protective device is applicable to all power components, in particular to grid components, such as as MOSFET, IGBT or MBS.
  • the invention makes it possible to increase the reliability and compactness of the protection of a power switch, without affecting the cost. To this end, it is particularly advantageous to achieve the protection in an integrated way with the electronic active power component.
  • the invention thus proposes a device for protecting a electronic component of active power, comprising a transistor of power and an overvoltage control element that can be integrated together, the control element being connected to an input controlling the active element to control the conduction of the power transistor when the voltage across the device is greater than a predetermined threshold.
  • the invention thus proposes a device for rapid protection and likely to withstand strong currents.
  • the protection device is able to perform voltage balancing between several components series-mounted power.
  • the invention provides a device protection device integrated, comprising an active element and a control element overvoltage integrated with the active element and connected to an input of control of the active element to control the conduction of the active element in case of overvoltage.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
EP04291656A 2003-07-02 2004-07-01 Schutzelement für elektronische Bauteile und integrierte Schaltungen Withdrawn EP1505733A3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0308056A FR2857176B1 (fr) 2003-07-02 2003-07-02 Dispositif de protection pour composant electronique et circuit integre
FR0308056 2003-07-02

Publications (2)

Publication Number Publication Date
EP1505733A2 true EP1505733A2 (de) 2005-02-09
EP1505733A3 EP1505733A3 (de) 2008-11-05

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EP04291656A Withdrawn EP1505733A3 (de) 2003-07-02 2004-07-01 Schutzelement für elektronische Bauteile und integrierte Schaltungen

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EP (1) EP1505733A3 (de)
FR (1) FR2857176B1 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3080499A1 (fr) * 2018-04-20 2019-10-25 Stmicroelectronics (Tours) Sas Circuit de protection contre des decharges electrostatiques
US11152783B2 (en) 2018-03-22 2021-10-19 Stmicroelectronics (Tours) Sas Circuit of protection against electrostatic discharges

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5616970A (en) * 1994-02-08 1997-04-01 Asea Brown Boveri Ag Method and circuit arrangement for driving semiconductor switches in a series circuit
US5946178A (en) * 1995-03-02 1999-08-31 Abb Research Ltd. Protective circuit for series-connected power semiconductors
US6069372A (en) * 1998-01-22 2000-05-30 Mitsubishi Denki Kabushiki Kaisha Insulated gate type semiconductor device with potential detection gate for overvoltage protection
US6333604B1 (en) * 2000-09-25 2001-12-25 Semiconductor Components Industries Llc Integrated ignition circuit and method
US20030086227A1 (en) * 2001-11-05 2003-05-08 Alstom Device for protecting a power component against voltage surges

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5616970A (en) * 1994-02-08 1997-04-01 Asea Brown Boveri Ag Method and circuit arrangement for driving semiconductor switches in a series circuit
US5946178A (en) * 1995-03-02 1999-08-31 Abb Research Ltd. Protective circuit for series-connected power semiconductors
US6069372A (en) * 1998-01-22 2000-05-30 Mitsubishi Denki Kabushiki Kaisha Insulated gate type semiconductor device with potential detection gate for overvoltage protection
US6333604B1 (en) * 2000-09-25 2001-12-25 Semiconductor Components Industries Llc Integrated ignition circuit and method
US20030086227A1 (en) * 2001-11-05 2003-05-08 Alstom Device for protecting a power component against voltage surges

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
YAMAZAKI T ET AL: "The IGBT with monolithic overvoltage protection circuit" POWER SEMICONDUCTOR DEVICES AND ICS, 1993. ISPSD '93., PROCEEDINGS OF THE 5TH INTERNATIONAL SYMPOSIUM ON MONTEREY, CA, USA 18-20 MAY 1993, NEW YORK, NY, USA,IEEE, US, 18 mai 1993 (1993-05-18), pages 41-45, XP010116910 ISBN: 0-7803-1313-5 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11152783B2 (en) 2018-03-22 2021-10-19 Stmicroelectronics (Tours) Sas Circuit of protection against electrostatic discharges
FR3080499A1 (fr) * 2018-04-20 2019-10-25 Stmicroelectronics (Tours) Sas Circuit de protection contre des decharges electrostatiques

Also Published As

Publication number Publication date
FR2857176B1 (fr) 2005-09-02
EP1505733A3 (de) 2008-11-05
FR2857176A1 (fr) 2005-01-07

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