EP1473755A2 - Vorrichtung und Verfahren zur Steuerung einer Dosis von von einem Mikroemitter emittierten Elektronen - Google Patents
Vorrichtung und Verfahren zur Steuerung einer Dosis von von einem Mikroemitter emittierten Elektronen Download PDFInfo
- Publication number
- EP1473755A2 EP1473755A2 EP04101249A EP04101249A EP1473755A2 EP 1473755 A2 EP1473755 A2 EP 1473755A2 EP 04101249 A EP04101249 A EP 04101249A EP 04101249 A EP04101249 A EP 04101249A EP 1473755 A2 EP1473755 A2 EP 1473755A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- electrons
- module
- current
- micro
- transmitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0233—Improving the luminance or brightness uniformity across the screen
Definitions
- the present invention relates to a device and method of control and control of a dose of electrons emitted by a micro-transmitter, by example by a microtip.
- micro-transmitters micropoints type In the following description we consider as a non-limiting example of micro-transmitters micropoints type.
- microtips joined today by that of nanotubes, defines a field applications in the field of EDF displays ("Field Emission Display") than that of micro-transmitters, in which the requirements in terms of control and control of the emitted flows are very severe.
- EDF displays Field Emission Display
- the electrons acquire, by thermal agitation, sufficient energy (called “exit work”) to get over of the potential barrier, which holds them back to nuclei. They then move towards the surface of material and, if there is an electric field that attracts, they can be extracted from this material. To the ordinary temperature the thermal agitation energy is insufficient for the electrons to come out of the material.
- a tunnel effect allows electrons to be extracted from the emitter (cathode) in the vacuum, then to be collected on an anode.
- the transmitters working in cold emission are considered as current sources ordered in voltage, the flow of electrons emitted obeying the Fowler-Nordheim equations.
- FIG. 1A This is for example the case of a microtip 10 Tungsten, used in electron emitter. His electrical diagram is shown in Figure 1A. A flow of electrons is established between the anode 11 and the cathode 12. A control voltage is applied between the extraction grid 13, called "gate", and the cathode 12.
- Figure 1B shows the symbol behavioral of such a usable microtip with a generic electric simulator (type "Spice").
- the emission regime of such a microtip 10 is characterized by a strong non-linearity of the emission current I tip as a function of the voltage applied to the extraction grid 13.
- the tip current I tip meets the law :
- Curves 15 represented by dotted.
- the device of the invention is a circuit of this type, which is naturally faster and whose the linearity defects observed are corrected, the HV extraction grid control circuits being independent LV load control circuits which simplifies the implementation of the circuit and decreases the sensitivity to noise.
- the system's specifications must make it possible to let sequentially persist for moments necessary to perform the calibrations.
- Such a realization does not correct imperfections electron beam whose frequency of recurrence is greater than the frequency of refreshment of the calibrations.
- the stability of the feedback mouth is essential and must be guaranteed most often at price of active compensation of the bandwidth of the system, and thus to the detriment of its speed performance.
- a global method to perform a control of small electrical charges consists, using a few input variables configuration, to define the quantity of loads to interrupt the electron beam when such a desired dose has been achieved (" control ").
- the quantity of charges electrical is defined a priori.
- the device allowing such control to operate on a state-of-the-art power dynamics, including fluctuations of the current in time for the same microtip.
- Such a method allows theoretically very good linearity.
- the use of real functional modules and the requirement of a operation in high frequency translates into strong nonlinearities of the controlled electrical charge depending on the current regime.
- This network includes a focus internal electronics for each transmitter, a circuit closed-loop electron dose control to control each transmitter by controlling precisely the flow of electrons.
- Such a circuit of dose control, connected to a transmitter allows to obtain a dose, delivered during each cycle writing, adapted despite the effects of maladjustment transmitter-to-emitter, temperature and aging.
- This control circuit makes it possible to end the broadcast at a fixed dose and not at a fixed time fixed. It's an integrated and connected component to the transmitter.
- control circuit is source of non-linearities. It does not allow either, for a linear or two-dimensional arrangement of microtips, to compensate for the dispersion of doses emitted due to current dispersions inherent to microtips.
- the object of the invention is to compensate such nonlinearities, so as to make the linear control device and usable, and to provide specific solutions for linear or two-dimensional devices.
- the device of the invention comprises means for modulation over time of the threshold voltage at from the initialization signal so as to schedule a variable dose control over time such as the excess of electrons emitted during the times initialization and extinction is strictly offset by a decrease over time in the programmed dose.
- the control and control device a dose of electrons emitted by a micro-transmitter, illustrated in Figure 4, consists of a microtip 10, with an anode 11, a cathode 12, and an extraction grid 13, capable of providing a current when the voltage of the extraction grid 13 compared to the cathode 12 becomes greater than the extraction voltage in the vacuum.
- Capacities parasites 20 and 21 are inherent in the manufacture of such microtip 10 in microtechnology.
- This device is indeed applicable to a arrangement of several microtips either under the form of a linear arrangement (barette), either under form of a two-dimensional arrangement (matrix). All combinations of arrangements are also possible.
- This device can be realized in specific high-voltage technology, and allow control the doses of electrons emitted with cadences high.
- This module 30 The role of this module 30 is to treat basic information available on the microtip 10 and convert it to a size that can be compared to an input quantity, in order to take a decision on the number N of electrons emitted.
- This module may advantageously consist of a CTIA amplifier ("capacitive transimpedance amplifier”) which performs a current-voltage conversion.
- the input variable is then the cathode current of the microtip I c .
- This amplifier is characterized by its conversion gain R which is expressed in Volt / e - . It consists of an amplifier 35, a feedback capacitor (C fb ) 36, and a resetting device 37. For the output excursion ⁇ V s of the sensor module, the following is obtained:
- This module is initialized by a start signal start at the beginning of the sequence, and obeys the data signal, as illustrated by the following table: Data Action 1 Issue of the microtip 0 No issue of the microtip
- This module 33 is responsible for establishing the extraction grid voltage required for transmission by the microtip of the desired current so synchronous with the appearance of the start signal.
- This module 33 cuts the flow by bringing the gate voltage extraction at a level such as the current electronics is diminished by several decades. These ignition and extinction values depend on the transconductance of the microtip and its model geometric. Pilot voltages can be switched from 20V to approximately 50V, which then requires the use of a specific high voltage technology (HVCMOS).
- HVCMOS high voltage technology
- the voltage V is obtained at the output of the sensor module 30 is proportional to the cathode current I c emitted by the microtip.
- V1 the initialization voltage level
- N e of electrons emitted by the microtip is such that:
- a calibrated load Qc can therefore be programmed by V2 with the relation:
- the overall duration of the current pulse is not linear depending the programmed current level. Indeed, because of parasitic capacitances 20 and 21 mentioned previously, a switching of several tens of volts of the grid extraction 13 transiently disturbs the entry of the sensor module 30 which must be maintained polarization to avoid saturation of it. Such saturation would then require a constant important time for a return to equilibrium and would not allow operation in high frequency. During this time maintaining the polarization of the sensor module 30 at the establishment of the flow electronics, electronic charges are already issued and are recognized in the global balance sheet of charges issued, although they can not be measured because they depend on the level of current that is not known from the outset. Such a phenomenon is a first source of non-linearities.
- FIG. 8 which represents a materialization of the error on the number N of programmed electrons, illustrates such a phenomenon. If one traces, as a function of time, the number of electrons emitted with respect to the number of electrons programmed, with constant delay, an error is noted on the number of electrons emitted which depends on the level of current.
- the curve 45 corresponds to 2 * Iinom
- the curve 46 corresponds to Iinom
- the curve 47 corresponds to Iinom / 2
- the curve 48 corresponds to the number of electrons emitted.
- a first solution to compensate for such nonlinearities uses a comparison threshold which varies with time. It suffices for that to send a ramp 50, or a "staircase", on the input V2 of the comparator module 31 as illustrated in Figure 9.
- the object of the invention is to compensate for such non-linearities by proposing other methods of compensation by controlling the cathode current I c and by feedback on the value of the threshold V 2.
- the current reaches its nominal value I steady_state rapidly during the initialization time t start and that it is maintained during the extinction time t off , it is therefore at first constant order for the duration of the current pulse. Indeed, at the beginning, the V gate establishment time is short, and in the end, the logical gate delay and V gate delays are largely dominated by the delay of the comparator module 31 in decision making.
- Figure 12 illustrates a curve of the number of electrons emitted as a function of the current regime.
- the number of electrons emitted should remain the same whatever the current I tip , as illustrated by the horizontal curve 56.
- the curves 57 and 58 illustrate the number of electrons emitted respectively during the initialization and extinction times.
- the sequencing can be such that the times t start and t off remain constant whatever the current, that is to say that the electrons emitted during these times t start and t off depend only on the current regime (affine function ).
- the number of electrons emitted appears on the curve 59, which for any value of the abscissa X, represents the sum of the curves 56 + 57 + 58.
- the object of the device of the invention is to be able to accurately transmit a programmed number of electrons regardless of the current regime of the microtip and to interrupt the electron beam as soon as this value has been reached.
- the sum of the electrons emitted during each of the times described above must therefore remain constant, ie the total number of electrons emitted is linear and constant, regardless of the peak current I tip .
- the value of the threshold detection voltage V2 is modified during the electronic exposure.
- the compensation is carried out on quantities of surplus electrons answering the law: I tip * t q e
- FIGS. 13A and 13B respectively illustrate the theoretical 60 and measured curves 61 and the theoretical 60 and measured 61 'curves of the relative number of electrons as a function of the tip current I tip , respectively without compensation and with compensation as a function of the current.
- Curve 61 illustrates the improvement that is desired by using such active compensation as a function of current.
- the invention also relates to a linear device or matrix of control and control of electron doses emitted by a set of micro-transmitters, which includes, for each micro-transmitter, the different modules 30, 31, 32 and 33 as well that means for variations of the threshold voltage, as described above.
- Such compensation is illustrated in Figure 14. It does not cover all needs. It is able to compensate for differences between microtips, but not for high frequency fluctuations on the same microtip. However, it can be used when it is certain that the frequency of recurrence of the current fluctuations is lower than the frequency of appearance of the programmed pulses.
- the threshold voltage V2 is modulated in time from the start initialization signal so as to program a variable dose control over time such that the excess of electrons emitted during the phases t start and t off is strictly compensated. by the decrease over time of the programmed dose.
- This temporal variation is controlled by the generator 65.
- Figure 15 illustrates a simplified scheme of compensation as a function of the peak current.
- a peak current detection module 67 is able to reproduce exactly the peak current or to introduce a gain (X) on this current, for example by means of a current mirror. It is this output current that is measured by the sensor module 30.
- the decision on the time is always taken by the comparator module 31, but the decision threshold V2 is indexed on the instantaneous value of the emission current. This leads to an optimal compensation.
- the number of electrons deposited in excess to compensate by modifying the voltage V2 corresponds to
- V2 to be programmed The capacity of the sensor block and the times ⁇ t start + t off ⁇ being known, the variation of V2 to be programmed is directly proportional to I.
- this voltage R L * I must be added to the voltage Vref to stop, faster than in the ideal case (without Nstart and Nstop), the power of the microtip and therefore its emission.
- Block 68 of FIG. example be realized as illustrated on the figure 16.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0350071A FR2853133B1 (fr) | 2003-03-27 | 2003-03-27 | Dispositif et procede de commande et de controle d'une dose d'electrons emise par un micro-emetteur |
FR0350071 | 2003-03-27 |
Publications (3)
Publication Number | Publication Date |
---|---|
EP1473755A2 true EP1473755A2 (de) | 2004-11-03 |
EP1473755A3 EP1473755A3 (de) | 2008-11-12 |
EP1473755B1 EP1473755B1 (de) | 2011-08-31 |
Family
ID=32947402
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP04101249A Expired - Fee Related EP1473755B1 (de) | 2003-03-27 | 2004-03-25 | Vorrichtung und Verfahren zur Steuerung einer Dosis von von einem Mikroemitter emittierten Elektronen |
Country Status (4)
Country | Link |
---|---|
US (1) | US7088048B2 (de) |
EP (1) | EP1473755B1 (de) |
JP (1) | JP2004295124A (de) |
FR (1) | FR2853133B1 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1777690A2 (de) | 2005-10-18 | 2007-04-25 | Semiconductor Energy Laboratory Co., Ltd. | Anzeigevorrichtung |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5110847B2 (ja) * | 2005-10-18 | 2012-12-26 | 株式会社半導体エネルギー研究所 | 表示装置 |
CN113036855B (zh) * | 2021-03-12 | 2023-03-31 | 宁波美蕾电器有限公司 | 一种铅酸式多功能应急电源 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3936756A (en) * | 1971-04-30 | 1976-02-03 | Nihon Denshi Kabushiki Kaisha | Field emission electron gun having automatic current control |
US5656892A (en) * | 1995-11-17 | 1997-08-12 | Micron Display Technology, Inc. | Field emission display having emitter control with current sensing feedback |
US6040973A (en) * | 1997-01-28 | 2000-03-21 | Nec Corporaiton | Method of driving a field emission cold cathode device and a field emission cold cathode electron gun |
US6060840A (en) * | 1999-02-19 | 2000-05-09 | Motorola, Inc. | Method and control circuit for controlling an emission current in a field emission display |
US6163107A (en) * | 1997-03-11 | 2000-12-19 | Futaba Denshi Kogyo K.K. | Field emission cathode |
EP1104002A1 (de) * | 1999-11-29 | 2001-05-30 | Ushiodenki Kabushiki Kaisha | Verfahren zur Messung eines Elektronenstrahls und Elektronen-Bestrahlungs-Bearbeitungsvorrichtung |
EP1225613A1 (de) * | 1999-10-12 | 2002-07-24 | Matsushita Electric Industrial Co., Ltd. | Elektronenemissionsvorrichtung und damit ausgerüstete elektronenquelle, feldemissions-bildanzeige, fluoreszenzlampe und deren herstellungsverfahren |
US6498349B1 (en) * | 1997-02-05 | 2002-12-24 | Ut-Battelle | Electrostatically focused addressable field emission array chips (AFEA's) for high-speed massively parallel maskless digital E-beam direct write lithography and scanning electron microscopy |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2001202059A (ja) * | 2000-01-19 | 2001-07-27 | Mitsubishi Electric Corp | 冷陰極発光素子の駆動方法、冷陰極発光素子の駆動回路およびディスプレイ装置 |
US6362574B1 (en) * | 2000-05-31 | 2002-03-26 | Sri International | System for emitting electrical charge from a space object in a space plasma environment using micro-fabricated gated charge emission devices |
US6577130B1 (en) * | 2000-05-31 | 2003-06-10 | Sri International | System and method for sensing and controlling potential differences between a space object and its space plasma environment using micro-fabricated field emission devices |
JP2002328645A (ja) * | 2001-05-01 | 2002-11-15 | Canon Inc | 画像表示装置及びその駆動方法及び回路 |
EP1426997A1 (de) * | 2002-12-06 | 2004-06-09 | ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik Mbh | Feldemissionsstrahlenquelle und Strahlstromsteuerverfahren |
-
2003
- 2003-03-27 FR FR0350071A patent/FR2853133B1/fr not_active Expired - Fee Related
-
2004
- 2004-03-03 US US10/790,704 patent/US7088048B2/en not_active Expired - Fee Related
- 2004-03-24 JP JP2004087905A patent/JP2004295124A/ja active Pending
- 2004-03-25 EP EP04101249A patent/EP1473755B1/de not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3936756A (en) * | 1971-04-30 | 1976-02-03 | Nihon Denshi Kabushiki Kaisha | Field emission electron gun having automatic current control |
US5656892A (en) * | 1995-11-17 | 1997-08-12 | Micron Display Technology, Inc. | Field emission display having emitter control with current sensing feedback |
US6040973A (en) * | 1997-01-28 | 2000-03-21 | Nec Corporaiton | Method of driving a field emission cold cathode device and a field emission cold cathode electron gun |
US6498349B1 (en) * | 1997-02-05 | 2002-12-24 | Ut-Battelle | Electrostatically focused addressable field emission array chips (AFEA's) for high-speed massively parallel maskless digital E-beam direct write lithography and scanning electron microscopy |
US6163107A (en) * | 1997-03-11 | 2000-12-19 | Futaba Denshi Kogyo K.K. | Field emission cathode |
US6060840A (en) * | 1999-02-19 | 2000-05-09 | Motorola, Inc. | Method and control circuit for controlling an emission current in a field emission display |
EP1225613A1 (de) * | 1999-10-12 | 2002-07-24 | Matsushita Electric Industrial Co., Ltd. | Elektronenemissionsvorrichtung und damit ausgerüstete elektronenquelle, feldemissions-bildanzeige, fluoreszenzlampe und deren herstellungsverfahren |
EP1104002A1 (de) * | 1999-11-29 | 2001-05-30 | Ushiodenki Kabushiki Kaisha | Verfahren zur Messung eines Elektronenstrahls und Elektronen-Bestrahlungs-Bearbeitungsvorrichtung |
Non-Patent Citations (1)
Title |
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NAGAO M ET AL: "SI FEAS INTEGRATED WITH DRIVING CIRCUITS FOR DISPLAY-ON-A-CHIP" ASIA DISPLAY / IDW'01. PROCEEDINGS OF THE 21ST INTERNATIONAL DISPLAY RESEARCH CONFERENCE IN CONJUCTION WITH THE 8TH INTERNATIONAL DISPLAY WORKSHOPS. NAGOYA, JAPAN, OCT. 16 - 19, 2001, INTERNATIONAL DISPLAY RESEARCH CONFERENCE. IDRC, SAN JOSE, CA: SID, vol. CONF. 21 / 8, 16 octobre 2001 (2001-10-16), pages 1161-1164, XP001134242 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1777690A2 (de) | 2005-10-18 | 2007-04-25 | Semiconductor Energy Laboratory Co., Ltd. | Anzeigevorrichtung |
EP1777690A3 (de) * | 2005-10-18 | 2009-10-21 | Semiconductor Energy Laboratory Co., Ltd. | Anzeigevorrichtung |
US7825877B2 (en) | 2005-10-18 | 2010-11-02 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
Also Published As
Publication number | Publication date |
---|---|
EP1473755B1 (de) | 2011-08-31 |
US20040222391A1 (en) | 2004-11-11 |
FR2853133B1 (fr) | 2005-04-29 |
FR2853133A1 (fr) | 2004-10-01 |
EP1473755A3 (de) | 2008-11-12 |
JP2004295124A (ja) | 2004-10-21 |
US7088048B2 (en) | 2006-08-08 |
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