EP1438750A1 - Method for producing a tfa image sensor and one such tfa image sensor - Google Patents

Method for producing a tfa image sensor and one such tfa image sensor

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Publication number
EP1438750A1
EP1438750A1 EP02782737A EP02782737A EP1438750A1 EP 1438750 A1 EP1438750 A1 EP 1438750A1 EP 02782737 A EP02782737 A EP 02782737A EP 02782737 A EP02782737 A EP 02782737A EP 1438750 A1 EP1438750 A1 EP 1438750A1
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EP
European Patent Office
Prior art keywords
pixel
image sensor
layer
electronics
photodiode matrix
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP02782737A
Other languages
German (de)
French (fr)
Inventor
Markus Scholz
Peter Rieve
Michael Wagner
Tarek Lule
Konstantin Seibel
Jens Prima
Stephan Benthien
Michael Sommer
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STMicroelectronics NV
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STMicroelectronics NV
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Application filed by STMicroelectronics NV filed Critical STMicroelectronics NV
Publication of EP1438750A1 publication Critical patent/EP1438750A1/en
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the invention relates to a method for producing a TFA image sensor in that, on an ASIC provided with electronic circuits for operating the TFA image sensor, such as pixel electronics, peripheral electronics and system electronics, a multilayer arrangement of adjacent photodiodes for pixel-by-pixel conversion of electromagnetic radiation into an intensity-dependent photocurrent and wherein the pixels are connected to contacts of the underlying pixel electronics.
  • the invention further relates to a TFA image sensor.
  • Image sensors are optoelectronic components for converting electromagnetic radiation into an intensity-dependent photocurrent in conjunction with an optoelectronic sensor in thin film on ASIC (TFA) technology, ie thin film technology on an application-specific circuit (ASIC).
  • TFA thin film on ASIC
  • ASIC application-specific circuit
  • Such a TFA image sensor consists of a matrix-organized or linear arrangement of pixels.
  • the electronic circuits for operating the sensor e.g. pixel electronics, peripheral electronics, system electronics
  • CMOS-based silicon technology CMOS-based silicon technology
  • the photodiode is applied to a planarized ASIC circuit, as disclosed in DE 100 63 837.6 (German patent application: TFA image sensor with extremely low dark current).
  • the photodiode can be a Schottky diode or a pin diode or in the form of other diode structures, e.g. B. with a controllable spectral sensitivity (P. Rieve, M. Sommer, M. Wagner, K. Seibel, M. Böhm, a-Si: H Color Imagers and Colorimetry, Journal of Non-Crystalline Solids, vol. 266-269 , pp. 1168-1172, 2000), made of amorphous or microcrystalline silicon or its alloys.
  • the image sensor is passivated highly meaningful.
  • the invention is based on the object of creating a method for producing a TFA image sensor which enables the use of passive ASIC circuits manufactured in a standard manner without impairing the topography of the photoactive sensor surface. Furthermore, an improved TFA image sensor is to be created.
  • the object on which the invention is based is achieved in a method of the type mentioned at the outset by removing the CMOS passivation layer in the photoactive region and then the topmost CMOS metallization, and replacing it with a metal layer structured in the pixel grid to form back electrodes and that subsequently the multilayer arrangement as a photodiode, the photodiode matrix being designed as a pixel matrix.
  • This method ensures a completely planar surface in the area of the pixel matrix as a prerequisite for good functionality of the TFA image sensor with low dark current.
  • the metal layer structured in the pixel grid can advantageously be produced by depositing chromium.
  • this protective layer should have a high level of transparency in the relevant spectral range.
  • the passivating protective layer also covers this area.
  • the protective layer should be applied in a low-temperature process, for example at a temperature of approx. 200 ° C.
  • Suitable for the protective layer are benzocyclobutenes (BCB) based polymer dielectrics (Cyclotene), parylene (a crystal-clear polymer) or another suitable polymeric transparent material that is sufficiently moisture-resistant.
  • BCB benzocyclobutenes
  • Cyclotene polymer dielectrics
  • parylene a crystal-clear polymer
  • another suitable polymeric transparent material that is sufficiently moisture-resistant.
  • a color filter layer with a passivating effect at least on the photodiode matrix in order to adapt the properties of the TFA image sensor to other color image sensors, for which a mosaic-structured color filter layer is also suitable.
  • the object on which the invention is based is furthermore achieved in a TFA image sensor, consisting of an ASIC circuit, on which a multilayer arrangement with adjacent photodiodes for pixel-by-pixel conversion of electromagnetic radiation into an intensity-dependent photocurrent, the pixels being connected to contacts of the pixel electronics underneath, solved in that a photodiode matrix with back contacts in the photoactive area is arranged directly on the surface of the ASIC, that the photo diode matrix including the peripheral electronics located on the ASIC is covered by a transparent protective layer, the bond pads on the ASIC circuit being left out.
  • At least the area of the photodiode matrix is defined by a mosaic-like structured colored filter layer covered as a protective layer.
  • a plurality of filter layers are stacked one above the other over the photodiode matrix.
  • a special continuation of the invention is characterized in that the protective and / or the filter layer
  • Periphery of the TFA image sensor including the circuit components located in this area covers, whereby a light shielding of these areas is achieved and disturbing photodiode effects can be avoided.
  • CMOS passivation layer provided as standard can be used without the topography above the photoactive sensor surface being impaired thereby.
  • CMOS passivation layer The selective removal of the CMOS passivation layer using the method has the consequence that the uppermost CMOS metallization level is subsequently exposed in this area. Since, as a rule, this metal level is required as an etch stop for the removal of the passivation layer, the top metal layer must be made flat under the above-mentioned opening of the passivation in the area of the photoactive sensor surface and cannot - as in the case of the state of the art - in a grid the pixel be structured.
  • the back electrodes of all the pixels are initially connected to one another via the uppermost CMOS metal level, so that before the photodiodes are applied this uppermost CMOS metallization of the ASIC circuit must be removed and replaced with a matrix of metal electrodes structured in the pixel grid, which form the back electrodes of the pixels.
  • This can be done either by completely removing the metal layer (including any conductive barrier layers) and then applying and structuring a new metal layer (e.g. chromium) or by only partially removing the topmost CMOS metallization and structuring the remaining part (e.g. the lower barrier layer).
  • the deposition of the photodiode and, if necessary, further layers is then carried out analogously to the standard process.
  • FIG. 6 the TFA image sensor according to FIG. 5 with an additional passivating transparent polymer layer
  • FIG. 7 the TFA image sensor according to FIG. 5 with additional color filter layers for passivation.
  • the process steps that can be seen from FIGS. 2 to 7 are summarized below in the following way:
  • the metal layer 4 can consist of chromium or another suitable metal.
  • TFA image sensor consists in the use of a further passive protective layer 10 which, in addition to the peripheral electronics 9, above all covers the photodiode matrix 6 of the image sensor and passivates it against environmental influences. With their help, the edge of the photodiode matrix 6 in particular can also be protected against environmental influences (for example penetrating moisture, which may increase the dark current).
  • This additional passivating protective layer 10 should be one have high transparency in the relevant spectral range and can be applied in a low-temperature process (e.g. with amorphous silicon up to approx. 200 ° C) so as not to impair the underlying structures. BCBs (cyclotenes), parylenes or other polymeric transparent layers are suitable for this.
  • This passivating protective layer 10 must be structured in such a way that only the bond pads 11 located in the area of the peripheral electronics 9 are exposed.
  • a further advantageous embodiment of a TFA image sensor according to the invention consists of the color filter layers 8 (e.g. Bayer pattern, US Pat. No. 3971065) which are usually used in color image sensors and are structured in a mosaic pattern and which likewise have a passivating protective effect above the photodiode matrix 6. also to be provided at the edge of the photodiode matrix 6 and in the area of the peripheral electronics 9 of the image sensor.
  • a plurality of color filter layers 8 can also be stacked one above the other, so that, in addition to the passivation of the peripheral electronics 9, light shielding of the circuit components located in this area can be achieved.
  • FIGS. 2-7 show only the top layers of the ASIC circuit 12, which are relevant for the interface to the TFA layers of the TFA image sensor.
  • FIG. 1 shows a TFA image sensor according to the state of the art, ie without a passivation layer, in cross section.
  • the top layer of the ASIC circuit 12 consists of an intermediate metal dielectric 13, through which vias 14 extend in the pixel grid, which the back electrodes 5 (metal 3) of the photodiode matrix 6 on the ASIC circuit 12 with the contacts 15 ( Connect metal 1) of the ASIC circuit 12.
  • the photodiode matrix 6 is covered by the protective layer 10.
  • the peripheral electronics 9 required for the operation of the TFA image sensor are only indicated schematically.
  • FIG. 1 shows one of a large number of bond pads 11 (metal 2) in the peripheral region of the TFA image sensor for realizing external contacts.
  • the bond pad 11 is connected via via's through the intermediate metal dielectric 13 to a further contact 16 of the ASIC circuit.
  • FIG. 2 shows an image sensor corresponding to the invention after opening the CMOS passivation layer 1 (process step 1 according to the above list), in FIG. 3 after etching back the uppermost CMOS metallization 2 (metal 2, process step 2), in FIG. 4 after applying and structuring the back electrodes 5 (metal 3) of the photodiode matrix 6 (after process step 4).
  • FIG. 5 A complete image sensor using TFA technology is sketched in FIG. 5.
  • FIG. 6 The other figures illustrate TFA image sensors with a passivating transparent protective layer 10 (FIG. 6) or with the use of color filter layers 8 for passivation (FIG. 7).

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

The invention relates to a method for producing a TFA image sensor in which a multi-layer arrangement comprising a photo diode matrix (6) is arranged on an ASIC switching circuit (12) provided with electronic circuits for operating the TFA image sensor, such as pixel electronics, peripheral electronics and system electronics, for the pixel-wise conversion of electromagnetic radiation into an intensity-dependent photocurrent, the pixels being connected to contacts of the underlying pixel electronics of the ASIC switching circuit (12). The aim of the inventive method is to enable conventionally produced ASIC switching circuits to be used without impairing the topography of the photoactive sensor surface. To this end, the CMOS passivation layer (1) in the photoactive region and then the upper CMOS metallisation (2) are removed and replaced by a metallic layer (4) which is structured in the pixel raster, for the formation of back electrodes (5). The photo diode matrix (6) is then applied and structured, said photo diode matrix (6) being embodied as a pixel matrix, on which a passivating protective layer (10) and/or a colour filter layer (8) having a passivating action can be applied.

Description

verfahren zum Herstellen eines TFA-Bildsensor sowie TFA- method for producing a TFA image sensor and TFA
Bildsensorimage sensor
Die Erfindung betrifft ein Verfahren zum Herstellen eines TFA-Bildsensors, indem auf einem mit elektronischen Schal- tungen zum Betrieb des TFA-Bildsensors, wie Pixelelektronik, Peripherieelektronik und Systemelektronik versehenen ASIC eine Mehrschichtanordnung von benachbarten Photodioden zur pixelweisen Umwandlung von elektromagnetischer Strahlung in einen intensitätsabhängigen Photostrom und wobei die Pixel mit Kontakten der darunter liegenden Pixelelektronik verbunden sind. Die Erfindung betrifft ferner einen TFA- Bildsensor .The invention relates to a method for producing a TFA image sensor in that, on an ASIC provided with electronic circuits for operating the TFA image sensor, such as pixel electronics, peripheral electronics and system electronics, a multilayer arrangement of adjacent photodiodes for pixel-by-pixel conversion of electromagnetic radiation into an intensity-dependent photocurrent and wherein the pixels are connected to contacts of the underlying pixel electronics. The invention further relates to a TFA image sensor.
Bildsensoren sind optoelektronische Bauelemente zur Umwand- lung elektromagnetischer Strahlung in einen intensitätsabhängigen Photostrom im Verbund mit einem optoelektronischen Sensor in Thin Film on ASIC (TFA) -Technologie, also einer Dünnfilmtechnologie auf einem anwendungsspezifischen Schaltkreis (ASIC) . Ein derartiger TFA-Bildsensor besteht aus ei- ner matrixorganisierten oder linearen Anordnung von Bildpunkten (Pixeln) . Die elektronischen Schaltungen zum Betrieb des Sensors (z. B. Pixelelektronik, Peripherieelektronik, Systemelektronik) sind üblicherweise in CMOS-basierter Siliziumtechnologie realisiert und bilden den ASIC-Schaltkreis .Image sensors are optoelectronic components for converting electromagnetic radiation into an intensity-dependent photocurrent in conjunction with an optoelectronic sensor in thin film on ASIC (TFA) technology, ie thin film technology on an application-specific circuit (ASIC). Such a TFA image sensor consists of a matrix-organized or linear arrangement of pixels. The electronic circuits for operating the sensor (e.g. pixel electronics, peripheral electronics, system electronics) are usually implemented in CMOS-based silicon technology and form the ASIC circuit.
Durch eine isolierende Schicht hiervon getrennt und mittels entsprechender elektrischer Kontakte hiermit verbunden, befindet sich auf dem ASIC-Schaltkreis eine Mehrschichtanordnung mit einer Photodiodenmatrix, welche die Umwandlung elektromagnetischer Strahlung in einen intensitätsabhängigen Photostrom vornimmt. Dieser Photostrom wird an bestimmten, in jedem Pixel vorhandenen Kontakten der darunterliegenden Pixelelektronik übergeben des ASIC-Schaltkreises (B. Schneider, P. Rieve, M. Böhm, Image Sensors in TFA (Thin Film on ASIC) Technology, ed. B. Jahne, H. Hausecker, P. Geißler, Handbook of Computer Vision and Applications, pp. 237-270, Academic Press, San Diego, 1999) .Separated from it by an insulating layer and connected to it by means of appropriate electrical contacts, there is a multilayer arrangement with a photodiode matrix on the ASIC circuit which converts electromagnetic radiation into an intensity-dependent photocurrent. This photocurrent is contacts in the underlying pixel electronics in each pixel transfer the ASIC circuit (B. Schneider, P. Rieve, M. Böhm, Image Sensors in TFA (Thin Film on ASIC) Technology, ed. B. Jahne, H. Hauscker, P. Geißler, Handbook of Computer Vision and Applications, pp. 237-270, Academic Press, San Diego, 1999).
Nach dem Stand der Technik wird die Photodiode auf eine planarisiertes ASIC-Schaltung aufgebracht, wie in DE 100 63 837.6 (Deutsche Patentanmeldung: TFA-Bildsensor mit extrem niedrigem Dunkelstrom) offengelegt ist. Die Photodiode kann als Schottkydiode oder als pin-Diode oder auch in Form anderer Diodenstrukturen, z. B. mit einer steuerbaren spektralen Empfindlichkeit (P. Rieve, M. Sommer, M. Wagner, K. Seibel, M. Böhm, a-Si:H Color Imagers and Colorimetry, Journal of Non-Crystalline Solids, vol. 266-269, pp. 1168-1172, 2000), aus amorphem oder mikrokristallinem Silizium oder dessen Legierungen ausgeführt sein. Entscheidend für einen niedrigen Dunkelstrom und damit für eine Gewährleistung der Funktiona- lität des Bildsensors auch bei niedrigen Beleuchtungsintensitäten ist dabei die Tatsache, dass sich die Photodiodenmatrix auf einem Substrat befindet, welches eine im Vergleich zur Dicke der Diode ebene Topographie aufweist. Dies bedeutet, dass bei dem Stand der Technik entsprechenden TFA- Bildsensoren auf die Passivierung des ASICs verzichtet werden muss, welche in der Regel nicht mehr planarisiert wird und in Verbindung mit der darunter liegenden obersten Metallschicht eine Topographie zur Folge hat, die durch Stufenhöhen von mehr als 2 μm gekennzeichnet ist und daher nicht mehr als eben angesehen werden kann.According to the prior art, the photodiode is applied to a planarized ASIC circuit, as disclosed in DE 100 63 837.6 (German patent application: TFA image sensor with extremely low dark current). The photodiode can be a Schottky diode or a pin diode or in the form of other diode structures, e.g. B. with a controllable spectral sensitivity (P. Rieve, M. Sommer, M. Wagner, K. Seibel, M. Böhm, a-Si: H Color Imagers and Colorimetry, Journal of Non-Crystalline Solids, vol. 266-269 , pp. 1168-1172, 2000), made of amorphous or microcrystalline silicon or its alloys. What is decisive for a low dark current and thus for ensuring the functionality of the image sensor even at low illumination intensities is the fact that the photodiode matrix is on a substrate which has a flat topography compared to the thickness of the diode. This means that in the state-of-the-art TFA image sensors, the passivation of the ASIC has to be dispensed with, which as a rule is no longer planarized and, in conjunction with the uppermost metal layer underneath, results in a topography which is increased by step heights is marked as 2 μm and can therefore no longer be regarded as flat.
Zwecks Abschirmung des Sensors gegen Umwelteinflüsse (z. B. eindringende Feuchtigkeit) und gegenüber mechanischer Beanspruchung während der noch zu durchlaufenden Prozessierungs- schritte und auch darüber hinaus sowie aus Gründen der Zuverlässigkeit ist hingegen eine Passivierung des Bildsensors in hohem Maße sinnvoll.In order to shield the sensor against environmental influences (eg penetrating moisture) and against mechanical stress during the processing steps still to be carried out and also beyond, as well as for reasons of reliability, the image sensor is passivated highly meaningful.
Der Erfindung liegt nunmehr die Aufgabe zugrunde, ein Verfahren zum Herstellen eines TFA-Bildsensors zu schaffen, welches die Verwendung standardmäßig hergestellter passi- vierter ASIC-Schaltkreise ohne Beeinträchtigung der Topographie der photoaktiven Sensorfläche ermöglicht. Ferner soll ein verbesserter TFA-Bildsensor geschaffen werden.The invention is based on the object of creating a method for producing a TFA image sensor which enables the use of passive ASIC circuits manufactured in a standard manner without impairing the topography of the photoactive sensor surface. Furthermore, an improved TFA image sensor is to be created.
Die der Erfindung zugrundeliegende Aufgabenstellung wird bei einem Verfahren der eingangs genannten Art dadurch gelöst, dass die CMOS-Passivierungsschicht im photoaktiven Bereich und anschließend die oberste CMOS-Metallisierung entfernt wird, und durch eine im Pixelraster strukturierte Metall- schicht zur Bildung von Rückelektroden ersetzt wird und dass nachfolgend die Mehrschichtanordnung als Photodiode, wobei die Photodiodenmatrix als Pixelmatrix ausgebildet ist.The object on which the invention is based is achieved in a method of the type mentioned at the outset by removing the CMOS passivation layer in the photoactive region and then the topmost CMOS metallization, and replacing it with a metal layer structured in the pixel grid to form back electrodes and that subsequently the multilayer arrangement as a photodiode, the photodiode matrix being designed as a pixel matrix.
Durch dieses Verfahren wird im Bereich der Pixelmatrix eine vollkommen planare Oberfläche als Voraussetzung für eine gute Funktionalität des TFA-Bildsensors mit niedrigem Dunkelstrom gewährleistet.This method ensures a completely planar surface in the area of the pixel matrix as a prerequisite for good functionality of the TFA image sensor with low dark current.
Die im Pixelraster strukturierte Metallschicht kann vorteil- haft durch Abscheiden von Chrom hergestellt werden.The metal layer structured in the pixel grid can advantageously be produced by depositing chromium.
Weiterhin ist es zweckmäßig, zumindest auf der Photodiodenmatrix eine passivierende Schutzschicht aufzubringen, wobei die Bondpads freigehalten, oder nachträglich freigelegt wer- den. Diese Schutzschicht sollte allerdings eine hohe Transparenz im relevanten Spektralbereich aufweisen.Furthermore, it is expedient to apply a passivating protective layer at least on the photodiode matrix, the bond pads being kept free or subsequently being exposed. However, this protective layer should have a high level of transparency in the relevant spectral range.
Um auch einen guten Schutz des Randbereiches der Photodiodenmatrix zu gewährleisten, ist es von Vorteil, wenn die passivierende Schutzschicht auch diesen Bereich abdeckt. Um die darunter liegenden Strukturen nicht zu beeinträchtigen, sollte die Schutzschicht in einem Niedertemperaturpro- zess, beispielsweise bei einer Temperatur von ca. 200 °C, aufgebracht werden.In order to ensure good protection of the edge area of the photodiode matrix, it is advantageous if the passivating protective layer also covers this area. In order not to impair the underlying structures, the protective layer should be applied in a low-temperature process, for example at a temperature of approx. 200 ° C.
Für die Schutzschicht sind Benzocyclobutene (BCB) basierte Polymer-Dielektrika (Cyclotene) , Parylene (ein glasklares Polymer) oder ein anderes geeignetes polymeres transparentes Material geeignet, das hinreichend feuchtigkeitsresistent ist.Suitable for the protective layer are benzocyclobutenes (BCB) based polymer dielectrics (Cyclotene), parylene (a crystal-clear polymer) or another suitable polymeric transparent material that is sufficiently moisture-resistant.
Weiterhin ist es von Vorteil, zumindest auf der Photodiodenmatrix eine Farbfilterschicht mit passivierender Wirkung aufzutragen, um die Eigenschaften des TFA-Bildsensors an an- dere Farbbildsensoren anzupassen, wofür auch eine mosaikförmig strukturierte Farbfilterschicht geeignet ist.Furthermore, it is advantageous to apply a color filter layer with a passivating effect at least on the photodiode matrix in order to adapt the properties of the TFA image sensor to other color image sensors, for which a mosaic-structured color filter layer is also suitable.
Selbstverständlich ist es auch möglich, mehrere Farbfilterschichten übereinander zu stapeln.Of course, it is also possible to stack several color filter layers on top of each other.
Die der Erfindung zugrundeliegende Aufgabe wird ferner bei einem TFA-Bildsensor, bestehend aus einem ASIC-Schaltkreis, auf dem eine Mehrschichtanordnung mit benachbarten Photodioden zur pixelweisen Umwandlung von elektromagnetischer Strahlung in einen intensitätsabhängigen Photostrom, wobei die Pixel mit Kontakten der darunter liegenden Pixelelektronik verbunden sind, dadurch gelöst, dass eine Photodiodenmatrix mit Rückkontakten im photoaktiven Bereich unmittelbar auf der Oberfläche des ASIC angeordnet ist, dass die Photo- diodenmatrix einschließlich der auf dem ASIC befindlichen Peripherieelektronik durch eine transparente Schutzschicht abgedeckt ist, wobei die Bondpads auf dem ASIC-Schaltkreis ausgespart werden.The object on which the invention is based is furthermore achieved in a TFA image sensor, consisting of an ASIC circuit, on which a multilayer arrangement with adjacent photodiodes for pixel-by-pixel conversion of electromagnetic radiation into an intensity-dependent photocurrent, the pixels being connected to contacts of the pixel electronics underneath, solved in that a photodiode matrix with back contacts in the photoactive area is arranged directly on the surface of the ASIC, that the photo diode matrix including the peripheral electronics located on the ASIC is covered by a transparent protective layer, the bond pads on the ASIC circuit being left out.
In einer ersten Ausgestaltung ist zumindest der Bereich der Photodiodenmatrix durch eine mosaikartig strukturierte mehr- farbige Filterschicht als Schutzschicht abgedeckt.In a first embodiment, at least the area of the photodiode matrix is defined by a mosaic-like structured colored filter layer covered as a protective layer.
Um eine besondere Filterwirkung zu erreichen, z.B. eine Anpassung an die Eigenschaften an andere Farbbildsensoren, sind in einer weiteren Ausgestaltung der Erfindung über der Photodiodenmatrix mehrere Filterschichten übereinander gestapelt .To achieve a special filter effect, e.g. an adaptation to the properties of other color image sensors, in a further embodiment of the invention, a plurality of filter layers are stacked one above the other over the photodiode matrix.
Eine besondere Fortführung der Erfindung ist dadurch gekenn- zeichnet, dass die Schutz- und/oder die Filterschicht dieA special continuation of the invention is characterized in that the protective and / or the filter layer
Peripherie des TFA-Bildsensors einschließlich der in diesem Bereich befindlichen Schaltungskomponenten abdeckt, wodurch eine Lichtschirmung dieser Bereiche erreicht wird und damit störende Photodiodeneffekte vermieden werden können.Periphery of the TFA image sensor including the circuit components located in this area covers, whereby a light shielding of these areas is achieved and disturbing photodiode effects can be avoided.
Der Vorteil des Verfahrens und des mit dem Verfahren hergestellten TFA-Bildsensor ist darin zu sehen, dass die standardmäßig bereitgestellte CMOS-Passivierungsschicht genutzt werden kann, ohne dass die Topographie über der photoaktiven Sensorfläche dadurch beeinträchtigt wird.The advantage of the method and of the TFA image sensor produced with the method can be seen in the fact that the CMOS passivation layer provided as standard can be used without the topography above the photoactive sensor surface being impaired thereby.
Die nach dem Verfahren erfolgende selektive Entfernung der CMOS-Passivierungsschicht hat zur Konsequenz, dass in diesem Bereich anschließend die oberste CMOS-Metallisierungsebene freiliegt. Da in der Regel diese Metallebene als Ätzstop für die Entfernung der Passivierungsschicht erforderlich ist, muss die oberste Metallschicht flächig unter der genannten Öffnung der Passivierung im Bereich der photoaktiven Sensorfläche ausgeführt sein und kann nicht - wie bei der dem Stand der Technik entsprechenden Ausführung - im Raster der Pixel strukturiert sein. D. h. die Rückelektroden sämtlicher Bildpunkte sind zunächst über die oberste CMOS-Metallebene miteinander verbunden, so dass vor dem Aufbringen der Photodioden diese oberste CMOS-Metallisierung des ASIC- Schaltkreises entfernt und gegen eine im Pixelraster strukturierte Matrix aus Metallelektroden ersetzt werden muss, welche die Rückelektroden der Bildpunkte bilden. Dies kann entweder durch vollständige Entfernung der Metallschicht (einschließlich eventueller leitfähiger Barriereschichten) und anschließendes Aufbringen und Strukturieren einer neuen Metallschicht (z. B. Chrom) erfolgen oder durch lediglich teilweise Entfernung der obersten CMOS-Metallisierung und Strukturierung des verbleibenden Teils (z. B. der unteren Barriereschicht) . Hernach erfolgt dann analog zum Standard- prozess die Deposition der Photodiode und gegebenenfalls weiterer Schichten (z. B. lokale Lichtschirmung, Farbfiltermatrix) .The selective removal of the CMOS passivation layer using the method has the consequence that the uppermost CMOS metallization level is subsequently exposed in this area. Since, as a rule, this metal level is required as an etch stop for the removal of the passivation layer, the top metal layer must be made flat under the above-mentioned opening of the passivation in the area of the photoactive sensor surface and cannot - as in the case of the state of the art - in a grid the pixel be structured. That is, the back electrodes of all the pixels are initially connected to one another via the uppermost CMOS metal level, so that before the photodiodes are applied this uppermost CMOS metallization of the ASIC circuit must be removed and replaced with a matrix of metal electrodes structured in the pixel grid, which form the back electrodes of the pixels. This can be done either by completely removing the metal layer (including any conductive barrier layers) and then applying and structuring a new metal layer (e.g. chromium) or by only partially removing the topmost CMOS metallization and structuring the remaining part (e.g. the lower barrier layer). The deposition of the photodiode and, if necessary, further layers (eg local light shielding, color filter matrix) is then carried out analogously to the standard process.
Die Erfindung soll nachfolgend an einem Ausführungsbeispiel näher erläutert werden. In den zugehörigen Zeichnungen zei- gen:The invention will be explained in more detail using an exemplary embodiment. The accompanying drawings show:
Fig. 1: einen nach dem Stand der Technik hergestellten TFA-Bildsensor;1: a TFA image sensor manufactured according to the prior art;
Fig. 2: einen erfindungsgemäßen TFA-Bildsensor nach der Öffnung der CMOS-Passivierungsschicht;2: a TFA image sensor according to the invention after opening the CMOS passivation layer;
Fig. 3: den TFA-Bildsensor nach Fig. 2 nach dem Rückätzen der obersten CMOS-Metallisierung;3: the TFA image sensor according to FIG. 2 after etching back the uppermost CMOS metallization;
Fig. 4: den TFA-Bildsensor nach dem Aufbringen der Rückelektroden der Photodioden;4: the TFA image sensor after the application of the back electrodes of the photodiodes;
Fig. 5: den nach dem erfindungsgemäßen Verfahren fertigge- stellten TFA-Bildsensor;5: the TFA image sensor completed by the method according to the invention;
Fig. 6: den TFA-Bildsensor nach Fig. 5 mit zusätzlicher passivierender transparenter Polymerschicht; undFIG. 6: the TFA image sensor according to FIG. 5 with an additional passivating transparent polymer layer; and
Fig. 7: den TFA-Bildsensor nach Fig. 5 mit zusätzlichen Farbfilterschichten zur Passivierung. Die aus den Fig. 2 bis 7 ersichtlichen Prozessschritte sind im folgenden stichpunktartig zusammengestellt:FIG. 7: the TFA image sensor according to FIG. 5 with additional color filter layers for passivation. The process steps that can be seen from FIGS. 2 to 7 are summarized below in the following way:
1. Öffnung der CMOS-Passivierungsschicht 1 im photoaktiven Bereich.1. Opening of the CMOS passivation layer 1 in the photoactive area.
2. Vollständige oder teilweise Entfernung der obersten CMOS-Metallisierung 2 im photoaktiven Bereich 3.2. Complete or partial removal of the uppermost CMOS metallization 2 in the photoactive region 3.
3. ggfs. Aufbringen einer neuen Metallschicht 4 (z. B. Chrom) .3. If necessary, application of a new metal layer 4 (e.g. chrome).
4. Strukturierung der Metallschicht 4 (Formierung von Rückelektroden 5) .4. Structuring of the metal layer 4 (formation of back electrodes 5).
5. Deposition und Strukturierung der Photodiodenmatrix 6.5. Deposition and structuring of the photodiode matrix 6.
6. ggfs. Deposition und Strukturierung einer lichtschir- menden Schicht 7.6. If necessary, deposition and structuring of a light-shielding layer 7.
7. ggfs. Deposition und Strukturierung von Farbfilterschichten 8.7. If necessary, deposition and structuring of color filter layers 8.
Auf diese Weise ist im Bereich der aktiven Photodiodenmat- rix 6 des TFA-Sensors eine planare Oberfläche gewährleistet, und gleichzeitig ist die zugehörige Peripherieelektronik 9 durch die CMOS-Passivierungsschicht 1 vor Umwelteinflüssen und gegen mechanische Beanspruchung geschützt. Die Metallschicht 4 kann aus Chrom, oder einem anderen geeigneten Me- tall bestehen.In this way, a planar surface is guaranteed in the area of the active photodiode matrix 6 of the TFA sensor, and at the same time the associated peripheral electronics 9 are protected against environmental influences and against mechanical stress by the CMOS passivation layer 1. The metal layer 4 can consist of chromium or another suitable metal.
Eine vorteilhafte Weiterbildung eines erfindungsgemäßen TFA- Bildsensors besteht in der Verwendung einer weiteren passi- vierenden Schutzschicht 10, welche außer der Peripherie- elektronik 9 vor allem die Photodiodenmatrix 6 des Bildsensors abdeckt und gegen Umwelteinflüsse passiviert. Mit ihrer Hilfe lässt sich insbesondere auch der Rand der Photodiodenmatrix 6 vor Umgebungseinflüssen (z. B. eindringende Feuchtigkeit, welche evtl. den Dunkelstrom erhöht) schützen.An advantageous further development of a TFA image sensor according to the invention consists in the use of a further passive protective layer 10 which, in addition to the peripheral electronics 9, above all covers the photodiode matrix 6 of the image sensor and passivates it against environmental influences. With their help, the edge of the photodiode matrix 6 in particular can also be protected against environmental influences (for example penetrating moisture, which may increase the dark current).
Diese zusätzliche passivierende Schutzschicht 10 sollte eine hohe Transparenz im relevanten Spektralbereich aufweisen und in einem Niedertemperaturprozess aufzubringen sein (z. B. bei amorphem Silizium bis ca. 200°C) , um die darunter liegenden Strukturen nicht zu beeinträchtigen. Es bieten sich hierfür beispielsweise BCBs (Cyclotene) , Parylene oder andere polymere transparente Schichten an. Diese passivierende Schutzschicht 10 muss derart strukturiert werden, dass lediglich die im Bereich der Peripherielektronik 9 befindlichen Bondpads 11 freigelegt werden.This additional passivating protective layer 10 should be one have high transparency in the relevant spectral range and can be applied in a low-temperature process (e.g. with amorphous silicon up to approx. 200 ° C) so as not to impair the underlying structures. BCBs (cyclotenes), parylenes or other polymeric transparent layers are suitable for this. This passivating protective layer 10 must be structured in such a way that only the bond pads 11 located in the area of the peripheral electronics 9 are exposed.
Eine weitere vorteilhafte Ausführung eines erfindungsgemäßen TFA-Bildsensors besteht darin, die bei Farbbildsensoren üblicherweise verwendeten und mosaikförmig strukturierten Farbfilterschichten 8 (z. B. Bayer-Pattern, US-Patent Nr. 3971065) , welche über der Photodiodenmatrix 6 ebenfalls eine passivierende Schutzwirkung haben, auch am Rand der Photodiodenmatrix 6 und im Bereich der Peripherieelektronik 9 des Bildsensors vorzusehen. Beispielsweise können auch mehrere Farbfilterschichten 8 übereinander gestapelt werden, so dass außer der Passivierung der Peripherieelektronik 9 eine Lichtschirmung der in diesem Bereich befindlichen Schaltungskomponenten erzielt werden kann.A further advantageous embodiment of a TFA image sensor according to the invention consists of the color filter layers 8 (e.g. Bayer pattern, US Pat. No. 3971065) which are usually used in color image sensors and are structured in a mosaic pattern and which likewise have a passivating protective effect above the photodiode matrix 6. also to be provided at the edge of the photodiode matrix 6 and in the area of the peripheral electronics 9 of the image sensor. For example, a plurality of color filter layers 8 can also be stacked one above the other, so that, in addition to the passivation of the peripheral electronics 9, light shielding of the circuit components located in this area can be achieved.
Die aus den Fig. 2 - 7 ersichtlichen Darstellungen zeigen dabei lediglich die obersten Schichten des ASIC- Schaltkreises 12, welche für das Interface zu den TFA- Schichten des TFA-Bildsensors relevant sind.The illustrations shown in FIGS. 2-7 show only the top layers of the ASIC circuit 12, which are relevant for the interface to the TFA layers of the TFA image sensor.
Fig. 1 zeigt einen TFA-Bildsensor nach dem Stand der Tech- nik, d. h. ohne Passivierungsschicht, im Querschnitt. Die oberste Schicht des ASIC-Schaltkreises 12 besteht aus einem Zwischenmetall-Dielektrikum 13, durch das sich Via's 14 im Pixelraster erstrecken, welche die Rückelektroden 5 (Metall 3) der auf dem ASIC-Schaltkreis 12 befindlichen Photodioden- matrix 6 mit den Kontakten 15 (Metall 1) des ASIC- Schaltkreises 12 verbinden. Die Photodiodenmatrix 6 ist durch die Schutzschicht 10 abgedeckt. Die für den Betrieb des TFA-Bildsensors erforderliche Peripherieelektronik 9 ist nur schematisch angedeutet. Weiterhin zeigt Fig. einen von einer Vielzahl von Bondpads 11 (Metall 2) im Peripheriebe- reich des TFA-Bildsensors zur Realisierung von Außenkontakten. Das Bondpad 11 ist über Via's durch das Zwischenmetall- Dielektrikum 13 mit einem weiteren Kontakt 16 des ASIC- Schaltkreises verbunden.1 shows a TFA image sensor according to the state of the art, ie without a passivation layer, in cross section. The top layer of the ASIC circuit 12 consists of an intermediate metal dielectric 13, through which vias 14 extend in the pixel grid, which the back electrodes 5 (metal 3) of the photodiode matrix 6 on the ASIC circuit 12 with the contacts 15 ( Connect metal 1) of the ASIC circuit 12. The photodiode matrix 6 is covered by the protective layer 10. The peripheral electronics 9 required for the operation of the TFA image sensor are only indicated schematically. Furthermore, FIG. 1 shows one of a large number of bond pads 11 (metal 2) in the peripheral region of the TFA image sensor for realizing external contacts. The bond pad 11 is connected via via's through the intermediate metal dielectric 13 to a further contact 16 of the ASIC circuit.
In Fig. 2 ist ein der Erfindung entsprechender Bildsensor nach Öffnung der CMOS-Passivierungsschicht 1 (Prozessschritt 1 nach obiger Auflistung) dargestellt, in Fig. 3 nach Rückätzen der obersten CMOS-Metallisierung 2 (Metall 2, Prozessschritt 2), in Fig. 4 nach Aufbringen und Strukturierung der Rückelektroden 5 (Metall 3) der Photodiodenmatrix 6 (nach Prozessschritt 4) .2 shows an image sensor corresponding to the invention after opening the CMOS passivation layer 1 (process step 1 according to the above list), in FIG. 3 after etching back the uppermost CMOS metallization 2 (metal 2, process step 2), in FIG. 4 after applying and structuring the back electrodes 5 (metal 3) of the photodiode matrix 6 (after process step 4).
Ein kompletter Bildsensor in TFA-Technologie ist in Fig. 5 skizziert.A complete image sensor using TFA technology is sketched in FIG. 5.
Die weiteren Abbildungen verdeutlichen TFA-Bildsensoren mit passivierender transparenter Schutzschicht 10 (Fig. 6) bzw. mit Verwendung von Farbfilterschichten 8 zur Passivierung (Fig. 7) . The other figures illustrate TFA image sensors with a passivating transparent protective layer 10 (FIG. 6) or with the use of color filter layers 8 for passivation (FIG. 7).
Verfahren zum Herstellen eines TFA-Bildsensor sowie TFA- BildsensorMethod for producing a TFA image sensor and TFA image sensor
BezugzeichenlisteLIST OF REFERENCE NUMBERS
1 CMOS-Passivierung1 CMOS passivation
2 CMOS-Metallisierung 3 photoaktiver Bereich2 CMOS metallization 3 photoactive area
4 Metallschicht im Pixelraster4 metal layer in pixel grid
5 Rückelektrode (Metall 3)5 back electrode (metal 3)
6 Photodiodenmatrix6 photodiode matrix
7 lichtschirmende Schicht 8 Farbfilterschicht7 light-shielding layer 8 color filter layer
8.1 Rot8.1 red
8.2 Grün8.2 green
8.3 Blau8.3 blue
9 Peripherieelektronik 10 passivierende Schutzschicht9 peripheral electronics 10 passivating protective layer
11 Bondpad (Metall 2)11 bond pad (metal 2)
12 ASIC-Schaltkreis12 ASIC circuit
13 Zwischenmetall-Dielektrikum13 Intermetal dielectric
14 Via 15 Kontakt (Metall 1)14 Via 15 contact (metal 1)
16 Kontakt (Metall 1) 16 contact (metal 1)

Claims

Patentansprüche claims
1. Verfahren zum Herstellen eines TFA-Bildsensors, indem auf einem mit elektronischen Schaltungen zum Betrieb des TFA- Bildsensors, wie Pixelelektronik, Peripherieelektronik und Systemelektronik versehenen ASIC-Schaltkreis (12) eine Mehrschichtanordnung mit einer Photodiodenmatrix (6) zur pixelweisen Umwandlung von elektromagnetischer Strahlung in einen intensitätsabhängigen Photostrom angeordnet ist, wobei die Pixel mit Kontakten der darunter liegenden Pixelelektronik des ASIC-Schaltkreises (12) verbunden sind, dadurch gekennzeichnet, dass die CMOS-Passivierungsschicht (1) im photoaktiven Bereich und anschließend die oberste CMOS- Metallisierung (2) entfernt werden und durch eine im Pixelraster strukturierte Metallschicht (4) zur Bildung von Rück- elektroden (5) ersetzt wird und dass nachfolgend die Photodiodenmatrix (6) aufgebracht und strukturiert wird, wobei die Photodiodenmatrix () als Pixelmatrix ausgebildet ist.1. A method for producing a TFA image sensor by using a multilayer arrangement with a photodiode matrix (6) for pixel-by-pixel conversion of electromagnetic radiation on an ASIC circuit (12) provided with electronic circuits for operating the TFA image sensor, such as pixel electronics, peripheral electronics and system electronics is arranged in an intensity-dependent photocurrent, the pixels being connected to contacts of the pixel electronics of the ASIC circuit (12) underneath, characterized in that the CMOS passivation layer (1) in the photoactive region and then the uppermost CMOS metallization (2) are removed and replaced by a metal layer (4) structured in the pixel grid to form back electrodes (5) and that the photodiode matrix (6) is subsequently applied and structured, the photodiode matrix () being designed as a pixel matrix.
2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, dass die im Pixelraster strukturierte Metallschicht (4) durch Abscheiden von Chrom hergestellt wird.2. The method according to claim 1, characterized in that the metal layer (4) structured in the pixel grid is produced by depositing chromium.
3. Verfahren nach Anspruch 1 und 2, dadurch gekennzeichnet, dass zumindest auf der Photodiodenmatrix (6) eine passivie- rende Schutzschicht (10) aufgebracht wird, wobei die Bond- pads (11) freigehalten, oder nachträglich freigelegt werden.3. The method according to claim 1 and 2, characterized in that a passivating protective layer (10) is applied at least on the photodiode matrix (6), the bonding pads (11) kept free, or subsequently exposed.
4. Verfahren nach Anspruch 3, dadurch gekennzeichnet, dass die passivierende Schutzschicht (10) die Peripherie der Pho- todiodenmatrix (6) abdeckt.4. The method according to claim 3, characterized in that the passivating protective layer (10) covers the periphery of the photodiode matrix (6).
5. Verfahren nach Anspruch 3 und 4 , dadurch gekennzeichnet, dass die passivierende Schutzschicht (10) in einem Nieder- temperaturprozess aufgebracht wird.5. The method according to claim 3 and 4, characterized in that the passivating protective layer (10) is applied in a low-temperature process.
6. Verfahren nach Anspruch 5, dadurch gekennzeichnet, dass die passivierende Schutzschicht (10) bei einer Temperatur von ca. 200 °C aufgebracht wird.6. The method according to claim 5, characterized in that the passivating protective layer (10) is applied at a temperature of about 200 ° C.
7. Verfahren nach den Ansprüchen 3 bis 6, dadurch gekennzeichnet, dass die passivierende Schutzschicht (10) aus BCB's (Cyclotene), Parylene oder einem anderen geeigneten polymeren transparenten Material besteht.7. The method according to claims 3 to 6, characterized in that the passivating protective layer (10) consists of BCB's (Cyclotene), parylene or another suitable polymeric transparent material.
8. Verfahren nach den Ansprüchen 3 bis 6, dadurch gekennzeichnet, dass zumindest auf der Photodiodenmatrix (6) eine Farbfilterschicht (8) mit passivierender Wirkung aufgetragen wird.8. The method according to claims 3 to 6, characterized in that at least on the photodiode matrix (6) a color filter layer (8) is applied with a passivating effect.
9. Verfahren nach Anspruch 8, dadurch gekennzeichnet, dass eine mosaikförmig strukturierte Farbfilterschicht (8) verwendet wird.9. The method according to claim 8, characterized in that a mosaic structured color filter layer (8) is used.
10. Verfahren nach Anspruch 8 und 9, dadurch gekennzeichnet, dass mehrere Farbfilterschichten (8) übereinander gestapelt werden.10. The method according to claim 8 and 9, characterized in that a plurality of color filter layers (8) are stacked one above the other.
11. TFA-Bildsensor, bestehend aus einem ASIC-Schaltkreis, auf dem eine Mehrschichtanordnung mit einer Photodiodenmat- rix (6) zur pixelweisen Umwandlung von elektromagnetischer Strahlung in einen intensitätsabhängigen Photostrom angeordnet ist, wobei jedes Pixel mit einem Kontakt des darunter liegenden ASIC-Schaltkreises (12) verbunden ist, dadurch gekennzeichnet, dass eine Photodiodenmatrix (6) mit Rückelekt- roden (5) im photoaktiven Bereich (3) unmittelbar auf der Oberfläche des ASIC-Schaltkreises (12) angeordnet ist, dass die Photodiodenmatrix (6) einschließlich der auf dem ASIC- Schaltkreis (12) befindlichen Peripherieelektronik (9) durch eine transparente passivierende Schutzschicht (10) abgedeckt ist, wobei die Bondpads (11) auf dem ASIC-Schaltkreis (12) ausgespart sind.11. TFA image sensor, consisting of an ASIC circuit, on which a multilayer arrangement with a photodiode matrix (6) for pixel-by-pixel conversion of electromagnetic Radiation is arranged in an intensity-dependent photocurrent, each pixel being connected to a contact of the underlying ASIC circuit (12), characterized in that a photodiode matrix (6) with back electrodes (5) in the photoactive region (3) is directly on The surface of the ASIC circuit (12) is arranged such that the photodiode matrix (6) including the peripheral electronics (9) located on the ASIC circuit (12) is covered by a transparent passivating protective layer (10), the bond pads (11) are recessed on the ASIC circuit (12).
12. TFA-Bildsensor nach Anspruch 11, dadurch gekennzeichnet, dass zumindest der Bereich der Photodiodenmatrix (6) durch eine mosaikartig strukturierte mehrfarbige Farbfilterschicht (8) als Schutzschicht abgedeckt ist.12. TFA image sensor according to claim 11, characterized in that at least the area of the photodiode matrix (6) is covered by a mosaic-like structured multicolor color filter layer (8) as a protective layer.
13. TFA-Bildsensor nach Anspruch 12, dadurch gekennzeichnet, dass über der Photodiodenmatrix (6) mehrere Farbfilter- schichten (8) übereinander gestapelt sind.13. TFA image sensor according to claim 12, characterized in that a plurality of color filter layers (8) are stacked one above the other over the photodiode matrix (6).
14. TFA-Bildsensor nach einem der Ansprüche 11 bis 13, dadurch gekennzeichnet, dass die passivierende Schutz- und/oder die Farbfilterschicht (10, 8) die Peripherie der Photodiodenmatrix (6) einschließlich der Peropherieelektro- nik (9) des TFA-Bildsensors abdeckt. 14. TFA image sensor according to one of claims 11 to 13, characterized in that the passivating protective and / or the color filter layer (10, 8) the periphery of the photodiode matrix (6) including the peropherie electronics (9) of the TFA image sensor covers.
EP02782737A 2001-10-26 2002-10-21 Method for producing a tfa image sensor and one such tfa image sensor Withdrawn EP1438750A1 (en)

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WO2004008540A1 (en) 2002-07-16 2004-01-22 Stmicroelectronics Nv Tfa image sensor with stability-optimized photodiode
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3971065A (en) 1975-03-05 1976-07-20 Eastman Kodak Company Color imaging array
JPS6046401B2 (en) * 1979-02-26 1985-10-16 株式会社日立製作所 Manufacturing method of solid-state image sensor
US6111247A (en) * 1997-12-08 2000-08-29 Intel Corporation Passivation protection of sensor devices having a color filter on non-sensor portion
US6586812B1 (en) * 1999-04-13 2003-07-01 Agilent Technologies, Inc. Isolation of alpha silicon diode sensors through ion implantation
US6373117B1 (en) * 1999-05-03 2002-04-16 Agilent Technologies, Inc. Stacked multiple photosensor structure including independent electrical connections to each photosensor
US6288435B1 (en) * 1999-12-28 2001-09-11 Xerox Corporation Continuous amorphous silicon layer sensors using doped poly-silicon back contact
US20040113220A1 (en) 2000-12-21 2004-06-17 Peter Rieve Optoelectronic component for conversion electromagnetic radiation into an intensity-dependent photocurrent

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO03038901A1 *

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