EP1436850A1 - Insulator for an organic electronic component - Google Patents
Insulator for an organic electronic componentInfo
- Publication number
- EP1436850A1 EP1436850A1 EP02769910A EP02769910A EP1436850A1 EP 1436850 A1 EP1436850 A1 EP 1436850A1 EP 02769910 A EP02769910 A EP 02769910A EP 02769910 A EP02769910 A EP 02769910A EP 1436850 A1 EP1436850 A1 EP 1436850A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- insulator
- poly
- base polymer
- organic
- styrene
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000012212 insulator Substances 0.000 title claims abstract description 49
- 230000005669 field effect Effects 0.000 claims abstract description 5
- 239000003990 capacitor Substances 0.000 claims abstract description 4
- 239000000203 mixture Substances 0.000 claims description 9
- 229920005601 base polymer Polymers 0.000 claims description 8
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 claims description 7
- 229920002367 Polyisobutene Polymers 0.000 claims description 5
- 239000011368 organic material Substances 0.000 claims description 5
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 5
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 5
- 229920002943 EPDM rubber Polymers 0.000 claims description 4
- 239000002798 polar solvent Substances 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- JLBJTVDPSNHSKJ-UHFFFAOYSA-N 4-Methylstyrene Chemical compound CC1=CC=C(C=C)C=C1 JLBJTVDPSNHSKJ-UHFFFAOYSA-N 0.000 claims 1
- 239000004372 Polyvinyl alcohol Substances 0.000 claims 1
- 229920002451 polyvinyl alcohol Polymers 0.000 claims 1
- 239000011810 insulating material Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 41
- 239000000463 material Substances 0.000 description 21
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 229920003270 Cymel® Polymers 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 229920001002 functional polymer Polymers 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- MIOPJNTWMNEORI-GMSGAONNSA-N (S)-camphorsulfonic acid Chemical compound C1C[C@@]2(CS(O)(=O)=O)C(=O)C[C@@H]1C2(C)C MIOPJNTWMNEORI-GMSGAONNSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004971 Cross linker Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- XYLMUPLGERFSHI-UHFFFAOYSA-N alpha-Methylstyrene Chemical compound CC(=C)C1=CC=CC=C1 XYLMUPLGERFSHI-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002848 poly(3-alkoxythiophenes) Polymers 0.000 description 1
- 229920002959 polymer blend Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002102 polyvinyl toluene Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/14—Organic dielectrics
- H01G4/18—Organic dielectrics of synthetic material, e.g. derivatives of cellulose
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
- H01B3/44—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes vinyl resins; acrylic resins
- H01B3/442—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes vinyl resins; acrylic resins from aromatic vinyl compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
- H01B3/44—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes vinyl resins; acrylic resins
- H01B3/447—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes vinyl resins; acrylic resins from acrylic compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
Definitions
- the invention relates to an insulator for an organic electronic component, in particular for an organic field-effect transistor (OFET) and / or an organic capacitor.
- OFET organic field-effect transistor
- PHS polyhydroxystyrene
- Polyimide was also presented as an insulator material (JA Rogers et al., IEEE Electron Devices Letters, Vol 21, No 3, 2000, p. 100). Even if this material is used, there is a risk of damage to the already finished layers of an OFET, since this material can only be processed at extremely high temperatures (-400 ° C). Because organic semi- If the conductor or conductor typically only withstands significantly lower temperatures ( «200 ° C), polyimide cannot be used in fully organic OFETs.
- the object of the present invention is therefore to provide an isolator for a field-effect transistor which is at least partially constructed from organic material and which overcomes the disadvantages of the prior art.
- the invention relates to an insulator for an organic electronic component, in particular for an organic field-effect transistor and / or a capacitor based at least in part on organic material, the dielectric constant of the insulator layer remaining essentially constant in a frequency range between 1 Hz and 100 kHz ,
- the insulator comprises polyisobutylene or uncrosslinked EPDM (ethylene propylene diene monomer), as the base polymer (main component), which are only soluble in nonpolar hydrocarbons (hexane, heptane).
- EPDM ethylene propylene diene monomer
- the achievable homogeneous layer thickness with the material lies between approx. 2 ⁇ m-250 nm, whereby these layers still have a sufficiently high insulation property.
- Another important advantage of this material is that it is very easy to structure in order to enable through contacts (eg by means of lithography).
- the insulator material comprises commercially available PVDC-PAN-PMMA copolymer of the general formula
- x, y, and z each, independently of one another, values between 0 and 1, preferably those given in the examples
- the PVDC-PAN-PMMA copolymer is preferably used together with crosslinker components HMMM (hexamethoxymethalmelamine) and / or Cymel, the ratio of which can be varied widely (dissolved in dioxane).
- HMMM hexamethoxymethalmelamine
- Cymel the ratio of which can be varied widely (dissolved in dioxane).
- This material also enables very simple structuring, although it is not yet networked. Due to very low temperatures (approx. 70 ° C), this material can be networked and then becomes resistant to all subsequent steps that are necessary to complete an OFET and to build an integrated circuit.
- an insulator mixture comprises a base polymer of the general formula
- A e.g. Polyhydroxystyrene and B poly (styrene-co-allyl alcohol) e.g. Is polyvinyltoluene, poly-alpha-methylstyrene.
- an insulator which comprises a mixture of two copolymers, according to the general formula
- a mixture of poly (vinyltoluene-co-alphamethylstyrene) / poly (styrene-co-allyl alcohol) is particularly suitable.
- the indices x and y can be the same or different and assume values between 0.5 and 1.
- X and y are particularly preferably the same.
- the mixture is again preferably dissolved in polar solvents, especially in dioxane.
- an insulator layer made of one or a mixture of several of the materials mentioned fulfills the following process, electrical and mechanical requirements and is at the same time a very inexpensive material system:
- the insulator layer has good solubility in conventional organic solvents such as e.g. Dioxane, butanol other alcohols etc.
- the insulator layer can be structured after application.
- the structuring also does not negatively influence existing layers.
- the structurability is absolutely necessary in order to produce integrated circuits which consist of several OFETs, since only with the structuring the connection lines between the gate electrode of one OFET and the source or drain electrode of another OFET is possible.
- the insulator layer is chemically and thermally stable with respect to the process steps which are necessary to apply and structure subsequent layers of the OFET (e.g. the gate electrode)
- the relative dielectric constant of the insulator layer is approximately constant in a frequency range between 1 Hz and 100 kHz.
- the "relative dielectric constant” is referred to here as “approximately constant” if its change is less than or equal to 50%.
- the relative dielectric constant of the insulator layer preferably has at least a value of about 2 in the systems mentioned. This makes it possible to implement OFETs that operate at low voltages.
- the leakage currents through the insulator layer are advantageously negligibly small compared to the source-drain currents, even with very thin layers, i.e. they are preferably below 1 nA (depends on the 0-FET geometry).
- the dielectric strength of the insulator layer is high, preferably has a value of at least 5 * 10 5 V / cm.
- the insulator material should preferably not contain any movable contaminants (eg ions).
- the threshold voltage of the OFET is preferably not shifted by the isolator system.
- the insulator layer is resistant to mechanical loads such as bending, stretching or upsetting.
- the insulator layer is applied by spinning, knife coating, printing or spraying in such a way that a plane-parallel, smooth, homogeneous and defect-free layer is produced.
- structurable layers of either photoresist or metal are applied to the insulator layer.
- the insulator layer can be removed in a defined manner with suitable solvents and thus also structured. In this way, the insulator layer is always structured at temperatures below 100 ° C, so that this processing has no negative impact on the existing functional layers (e.g. semiconductors).
- organic material or "organic functional polymer” here encompasses all types of organic, metal-organic and / or organic-inorganic plastics (hybrids), in particular those which are referred to in English as “plastics". They are all types of substances with the exception of the semiconductors that form the classic diodes (germanium, silicon) and the typical metallic conductors. A restriction in the dogmatic sense to organic material as carbon-containing material is therefore not provided, rather the broad use of, for example, silicones is also contemplated. Furthermore, the term should not be subject to any restriction with regard to the molecular size, in particular to polymeric and / or oligomeric materials, but the use of "small molecules” is also entirely possible.
- the word component "polymer” in the functional polymer is historical and therefore contains no information about the presence of an actually polymeric compound.
- Example 1 Use of polyisobutylene (PIB) as an insulator - 0.4 g of PIB (Aldrich) are dissolved in 9.6 g of hexane at room temperature;
- PIB polyisobutylene
- PVDC-co-PAN-co-PMMA Aldrich
- 9 g dioxane 40 - 50 ° C - then 0.5 g Cymel 327 (Cytec Industries Inc.) and 0.1 g camphorsulfonic acid added and shaken for a few seconds;
- the solution is spin-coated (8000 rpm / 20 sec) onto the substrate already provided with source / drain electrodes and semiconductors (top gate structure) and a very homogeneous, approx. 400 nm thick layer is obtained;
- the sample is dried for about 30 minutes at room temperature in a dynamic vacuum; -
- the layer is then vapor-deposited with a thin gold layer, which in turn is structured by means of photolithography (photoresist, then etching with a KJ / J 2 solution)
- This applied metal mask allows the structuring of the insulator layer by removing the now exposed insulator surfaces with a cloth soaked in toluene
- the last step is the cross-linking of the isolator (10 min at 90 ° C)
- Example 3 Use of [50% polyhydroxystyrene / 50% poly (styrene-co-allyl alcohol)] as an insulator. This polymer mixture is then dissolved using dioxane and filtered using a 0.2 ⁇ m filter. Then the insulator layer is "baked" on a hot plate at approx. 100 ° C for 30 minutes. The structuring is also carried out using "metal masks" as in Example 2.
- the insulator material according to the invention shows no significant frequency-dependent change in the relative dielectric constant. Alignment of existing anisotropic molecules can be responsible for this phenomenon, or a lack of mobile charge carriers such as mobile ion NEN. In any case, no significant change in the dielectric constant, that is to say approx. 50%, is found over a frequency range of almost 100 kHz.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Formation Of Insulating Films (AREA)
- Thin Film Transistor (AREA)
- Organic Insulating Materials (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10151036 | 2001-10-16 | ||
DE10151036A DE10151036A1 (en) | 2001-10-16 | 2001-10-16 | Isolator for an organic electronic component |
PCT/DE2002/003292 WO2003038921A1 (en) | 2001-10-16 | 2002-09-05 | Insulator for an organic electronic component |
Publications (1)
Publication Number | Publication Date |
---|---|
EP1436850A1 true EP1436850A1 (en) | 2004-07-14 |
Family
ID=7702674
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP02769910A Withdrawn EP1436850A1 (en) | 2001-10-16 | 2002-09-05 | Insulator for an organic electronic component |
Country Status (5)
Country | Link |
---|---|
US (1) | US7298023B2 (en) |
EP (1) | EP1436850A1 (en) |
JP (1) | JP4360911B2 (en) |
DE (1) | DE10151036A1 (en) |
WO (1) | WO2003038921A1 (en) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10043204A1 (en) * | 2000-09-01 | 2002-04-04 | Siemens Ag | Organic field-effect transistor, method for structuring an OFET and integrated circuit |
CA2469912A1 (en) * | 2001-12-19 | 2003-06-26 | Avecia Limited | Organic field effect transistor with an organic dielectric |
US20040094761A1 (en) * | 2002-11-02 | 2004-05-20 | David Sparrowe | Polymerizable amine mixtures, amine polymer materials and their use |
US20040171743A1 (en) * | 2003-01-21 | 2004-09-02 | Terry Brewer, Ph.D. | Hybrid organic-inorganic polymer coatings with high refractive indices |
JP4914828B2 (en) * | 2005-03-28 | 2012-04-11 | パイオニア株式会社 | Gate insulating film, organic transistor, organic EL display device manufacturing method, display |
DE102005031448A1 (en) | 2005-07-04 | 2007-01-11 | Polyic Gmbh & Co. Kg | Activatable optical layer |
DE102005044306A1 (en) | 2005-09-16 | 2007-03-22 | Polyic Gmbh & Co. Kg | Electronic circuit and method for producing such |
CH705051B1 (en) * | 2007-12-21 | 2012-12-14 | Swatch Group Res & Dev Ltd | An active matrix display. |
US8692238B2 (en) | 2012-04-25 | 2014-04-08 | Eastman Kodak Company | Semiconductor devices and methods of preparation |
US8779415B2 (en) | 2012-11-08 | 2014-07-15 | Eastman Kodak Company | Devices containing organic polymeric multi-metallic composites |
EP3155623B1 (en) | 2014-06-11 | 2019-05-08 | Eastman Kodak Company | Devices having dielectric layers with thiosulfate-containing polymers |
DE102016115742B4 (en) | 2015-12-08 | 2022-11-24 | Shanghai Tianma Micro-electronics Co., Ltd. | Composite substrate, flexible display device and method of making same |
Family Cites Families (111)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3512052A (en) | 1968-01-11 | 1970-05-12 | Gen Motors Corp | Metal-insulator-semiconductor voltage variable capacitor with controlled resistivity dielectric |
US3769096A (en) | 1971-03-12 | 1973-10-30 | Bell Telephone Labor Inc | Pyroelectric devices |
JPS543594B2 (en) | 1973-10-12 | 1979-02-24 | ||
JPS54101176A (en) | 1978-01-26 | 1979-08-09 | Shinetsu Polymer Co | Contact member for push switch |
US4442019A (en) | 1978-05-26 | 1984-04-10 | Marks Alvin M | Electroordered dipole suspension |
US4340657A (en) | 1980-02-19 | 1982-07-20 | Polychrome Corporation | Novel radiation-sensitive articles |
US4666735A (en) * | 1983-04-15 | 1987-05-19 | Polyonics Corporation | Process for producing product having patterned metal layer |
DE3338597A1 (en) | 1983-10-24 | 1985-05-02 | GAO Gesellschaft für Automation und Organisation mbH, 8000 München | DATA CARRIER WITH INTEGRATED CIRCUIT AND METHOD FOR PRODUCING THE SAME |
JPS60117769A (en) | 1983-11-30 | 1985-06-25 | Fujitsu Ltd | Semiconductor memory device |
DE3768112D1 (en) | 1986-03-03 | 1991-04-04 | Toshiba Kawasaki Kk | RADIATION DETECTOR. |
JP2728412B2 (en) | 1987-12-25 | 1998-03-18 | 株式会社日立製作所 | Semiconductor device |
GB2215307B (en) | 1988-03-04 | 1991-10-09 | Unisys Corp | Electronic component transportation container |
US5364735A (en) | 1988-07-01 | 1994-11-15 | Sony Corporation | Multiple layer optical record medium with protective layers and method for producing same |
US4937119A (en) | 1988-12-15 | 1990-06-26 | Hoechst Celanese Corp. | Textured organic optical data storage media and methods of preparation |
US5892244A (en) | 1989-01-10 | 1999-04-06 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor including πconjugate polymer and liquid crystal display including the field effect transistor |
US6331356B1 (en) | 1989-05-26 | 2001-12-18 | International Business Machines Corporation | Patterns of electrically conducting polymers and their application as electrodes or electrical contacts |
US5206525A (en) | 1989-12-27 | 1993-04-27 | Nippon Petrochemicals Co., Ltd. | Electric element capable of controlling the electric conductivity of π-conjugated macromolecular materials |
FR2664430B1 (en) * | 1990-07-04 | 1992-09-18 | Centre Nat Rech Scient | THIN FILM FIELD EFFECT TRANSISTOR WITH MIS STRUCTURE, IN WHICH THE INSULATION AND THE SEMICONDUCTOR ARE MADE OF ORGANIC MATERIALS. |
FR2673041A1 (en) | 1991-02-19 | 1992-08-21 | Gemplus Card Int | METHOD FOR MANUFACTURING INTEGRATED CIRCUIT MICROMODULES AND CORRESPONDING MICROMODULE. |
US5408109A (en) | 1991-02-27 | 1995-04-18 | The Regents Of The University Of California | Visible light emitting diodes fabricated from soluble semiconducting polymers |
JPH0580530A (en) | 1991-09-24 | 1993-04-02 | Hitachi Ltd | Production of thin film pattern |
US5173835A (en) | 1991-10-15 | 1992-12-22 | Motorola, Inc. | Voltage variable capacitor |
EP0610183B1 (en) | 1991-10-30 | 1995-05-10 | Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. | Exposure device |
JP2709223B2 (en) | 1992-01-30 | 1998-02-04 | 三菱電機株式会社 | Non-contact portable storage device |
DE4243832A1 (en) | 1992-12-23 | 1994-06-30 | Daimler Benz Ag | Push button arrangement |
JP3457348B2 (en) | 1993-01-15 | 2003-10-14 | 株式会社東芝 | Method for manufacturing semiconductor device |
US5567550A (en) | 1993-03-25 | 1996-10-22 | Texas Instruments Incorporated | Method of making a mask for making integrated circuits |
JPH0722669A (en) | 1993-07-01 | 1995-01-24 | Mitsubishi Electric Corp | Plastic functional element |
JP3460863B2 (en) | 1993-09-17 | 2003-10-27 | 三菱電機株式会社 | Method for manufacturing semiconductor device |
US5556706A (en) | 1993-10-06 | 1996-09-17 | Matsushita Electric Industrial Co., Ltd. | Conductive layered product and method of manufacturing the same |
IL111151A (en) | 1994-10-03 | 1998-09-24 | News Datacom Ltd | Secure access systems |
JP3246189B2 (en) | 1994-06-28 | 2002-01-15 | 株式会社日立製作所 | Semiconductor display device |
US5574291A (en) | 1994-12-09 | 1996-11-12 | Lucent Technologies Inc. | Article comprising a thin film transistor with low conductivity organic layer |
JP3068430B2 (en) | 1995-04-25 | 2000-07-24 | 富山日本電気株式会社 | Solid electrolytic capacitor and method of manufacturing the same |
US5652645A (en) | 1995-07-24 | 1997-07-29 | Anvik Corporation | High-throughput, high-resolution, projection patterning system for large, flexible, roll-fed, electronic-module substrates |
US5625199A (en) | 1996-01-16 | 1997-04-29 | Lucent Technologies Inc. | Article comprising complementary circuit with inorganic n-channel and organic p-channel thin film transistors |
GB2310493B (en) | 1996-02-26 | 2000-08-02 | Unilever Plc | Determination of the characteristics of fluid |
JP3080579B2 (en) | 1996-03-06 | 2000-08-28 | 富士機工電子株式会社 | Manufacturing method of air rear grid array package |
DE19629656A1 (en) | 1996-07-23 | 1998-01-29 | Boehringer Mannheim Gmbh | Diagnostic test carrier with multilayer test field and method for the determination of analyte with its aid |
US6344662B1 (en) | 1997-03-25 | 2002-02-05 | International Business Machines Corporation | Thin-film field-effect transistor with organic-inorganic hybrid semiconductor requiring low operating voltages |
KR100248392B1 (en) | 1997-05-15 | 2000-09-01 | 정선종 | The operation and control of the organic electroluminescent devices with organic field effect transistors |
JPH1135893A (en) * | 1997-05-22 | 1999-02-09 | Toray Dow Corning Silicone Co Ltd | Sheet-like hot-melt adhesive and semiconductor |
JP4509228B2 (en) | 1997-08-22 | 2010-07-21 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Field effect transistor made of organic material and method of manufacturing the same |
WO1999013441A2 (en) | 1997-09-11 | 1999-03-18 | Precision Dynamics Corporation | Radio frequency identification tag on flexible substrate |
US6078196A (en) * | 1997-09-17 | 2000-06-20 | Intel Corporation | Data enabled logic circuits |
US6251513B1 (en) | 1997-11-08 | 2001-06-26 | Littlefuse, Inc. | Polymer composites for overvoltage protection |
JPH11142810A (en) | 1997-11-12 | 1999-05-28 | Nintendo Co Ltd | Portable information processor |
JP2001510670A (en) | 1997-12-05 | 2001-07-31 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Identification transponder |
US5997817A (en) | 1997-12-05 | 1999-12-07 | Roche Diagnostics Corporation | Electrochemical biosensor test strip |
US5998805A (en) | 1997-12-11 | 1999-12-07 | Motorola, Inc. | Active matrix OED array with improved OED cathode |
US6083104A (en) | 1998-01-16 | 2000-07-04 | Silverlit Toys (U.S.A.), Inc. | Programmable toy with an independent game cartridge |
CA2319428C (en) | 1998-01-28 | 2004-10-12 | Thin Film Electronics Asa | A method for generation of electrical conducting or semiconducting structures in three dimensions and methods for erasure of the same structures |
US6087196A (en) | 1998-01-30 | 2000-07-11 | The Trustees Of Princeton University | Fabrication of organic semiconductor devices using ink jet printing |
US6045977A (en) | 1998-02-19 | 2000-04-04 | Lucent Technologies Inc. | Process for patterning conductive polyaniline films |
DE19816860A1 (en) | 1998-03-06 | 1999-11-18 | Deutsche Telekom Ag | Chip card, especially credit card |
US6033202A (en) | 1998-03-27 | 2000-03-07 | Lucent Technologies Inc. | Mold for non - photolithographic fabrication of microstructures |
GB9808061D0 (en) | 1998-04-16 | 1998-06-17 | Cambridge Display Tech Ltd | Polymer devices |
TW410478B (en) | 1998-05-29 | 2000-11-01 | Lucent Technologies Inc | Thin-film transistor monolithically integrated with an organic light-emitting diode |
US5967048A (en) | 1998-06-12 | 1999-10-19 | Howard A. Fromson | Method and apparatus for the multiple imaging of a continuous web |
US6215130B1 (en) | 1998-08-20 | 2001-04-10 | Lucent Technologies Inc. | Thin film transistors |
CN100385232C (en) | 1998-08-26 | 2008-04-30 | 医药及科学传感器公司 | Optical-based sensing devices |
US6315883B1 (en) * | 1998-10-26 | 2001-11-13 | Novellus Systems, Inc. | Electroplanarization of large and small damascene features using diffusion barriers and electropolishing |
DE19851703A1 (en) | 1998-10-30 | 2000-05-04 | Inst Halbleiterphysik Gmbh | Electronic structure, e.g. FET, is produced by plotting, spraying, spin coating or spreading of insulating, semiconducting and-or conductive layers onto a substrate |
US6207522B1 (en) * | 1998-11-23 | 2001-03-27 | Microcoating Technologies | Formation of thin film capacitors |
US6384804B1 (en) | 1998-11-25 | 2002-05-07 | Lucent Techonologies Inc. | Display comprising organic smart pixels |
US6506438B2 (en) | 1998-12-15 | 2003-01-14 | E Ink Corporation | Method for printing of transistor arrays on plastic substrates |
US6321571B1 (en) | 1998-12-21 | 2001-11-27 | Corning Incorporated | Method of making glass structures for flat panel displays |
US6114088A (en) | 1999-01-15 | 2000-09-05 | 3M Innovative Properties Company | Thermal transfer element for forming multilayer devices |
GB2347013A (en) | 1999-02-16 | 2000-08-23 | Sharp Kk | Charge-transport structures |
AU5646800A (en) | 1999-03-02 | 2000-09-21 | Helix Biopharma Corporation | Card-based biosensor device |
US6207472B1 (en) | 1999-03-09 | 2001-03-27 | International Business Machines Corporation | Low temperature thin film transistor fabrication |
US6498114B1 (en) | 1999-04-09 | 2002-12-24 | E Ink Corporation | Method for forming a patterned semiconductor film |
US6072716A (en) | 1999-04-14 | 2000-06-06 | Massachusetts Institute Of Technology | Memory structures and methods of making same |
DE19921024C2 (en) | 1999-05-06 | 2001-03-08 | Wolfgang Eichelmann | Video game system |
US6383664B2 (en) | 1999-05-11 | 2002-05-07 | The Dow Chemical Company | Electroluminescent or photocell device having protective packaging |
JP3940546B2 (en) * | 1999-06-07 | 2007-07-04 | 株式会社東芝 | Pattern forming method and pattern forming material |
WO2000079617A1 (en) * | 1999-06-21 | 2000-12-28 | Cambridge University Technical Services Limited | Aligned polymers for an organic tft |
DE19933757A1 (en) | 1999-07-19 | 2001-01-25 | Giesecke & Devrient Gmbh | Manufacturing chip card with integral battery involves applying first conducting track structure, electrolyte and second conducting track structure to form opposite polarity electrodes |
DE19935527A1 (en) | 1999-07-28 | 2001-02-08 | Giesecke & Devrient Gmbh | Active film for chip cards with display |
DE19937262A1 (en) | 1999-08-06 | 2001-03-01 | Siemens Ag | Arrangement with transistor function |
US6593690B1 (en) | 1999-09-03 | 2003-07-15 | 3M Innovative Properties Company | Large area organic electronic devices having conducting polymer buffer layers and methods of making same |
US6517995B1 (en) | 1999-09-14 | 2003-02-11 | Massachusetts Institute Of Technology | Fabrication of finely featured devices by liquid embossing |
US6340822B1 (en) | 1999-10-05 | 2002-01-22 | Agere Systems Guardian Corp. | Article comprising vertically nano-interconnected circuit devices and method for making the same |
JP2004538618A (en) | 1999-10-11 | 2004-12-24 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Integrated circuit |
US6335539B1 (en) | 1999-11-05 | 2002-01-01 | International Business Machines Corporation | Method for improving performance of organic semiconductors in bottom electrode structure |
US6284562B1 (en) | 1999-11-17 | 2001-09-04 | Agere Systems Guardian Corp. | Thin film transistors |
US6621098B1 (en) | 1999-11-29 | 2003-09-16 | The Penn State Research Foundation | Thin-film transistor and methods of manufacturing and incorporating a semiconducting organic material |
US6673434B2 (en) * | 1999-12-01 | 2004-01-06 | Honeywell International, Inc. | Thermal interface materials |
US6197663B1 (en) | 1999-12-07 | 2001-03-06 | Lucent Technologies Inc. | Process for fabricating integrated circuit devices having thin film transistors |
AU781789B2 (en) * | 1999-12-21 | 2005-06-16 | Flexenable Limited | Solution processing |
US6304232B1 (en) * | 2000-02-24 | 2001-10-16 | The Goodyear Tire & Rubber Company | Circuit module |
DE10012204A1 (en) | 2000-03-13 | 2001-09-20 | Siemens Ag | Electronic postage stamp for identifying postal articles |
US6441196B2 (en) * | 2000-05-19 | 2002-08-27 | Alcon, Inc. | Processes and novel intermediates for 11-oxa prostaglandin synthesis |
US6329226B1 (en) | 2000-06-01 | 2001-12-11 | Agere Systems Guardian Corp. | Method for fabricating a thin-film transistor |
DE10033112C2 (en) | 2000-07-07 | 2002-11-14 | Siemens Ag | Process for the production and structuring of organic field-effect transistors (OFET), OFET produced thereafter and its use |
JP3609697B2 (en) * | 2000-08-10 | 2005-01-12 | 北川工業株式会社 | Thermal conductive sheet with conductive foil for electrical and electronic equipment |
WO2002015264A2 (en) | 2000-08-18 | 2002-02-21 | Siemens Aktiengesellschaft | Encapsulated organic-electronic component, method for producing the same and use thereof |
DE10043204A1 (en) | 2000-09-01 | 2002-04-04 | Siemens Ag | Organic field-effect transistor, method for structuring an OFET and integrated circuit |
DE10045192A1 (en) | 2000-09-13 | 2002-04-04 | Siemens Ag | Organic data storage, RFID tag with organic data storage, use of an organic data storage |
DE10047171A1 (en) | 2000-09-22 | 2002-04-18 | Siemens Ag | Electrode and/or conductor track used for components of OFETs and OLEDs is produced by treating an organic functional polymer with a chemical compound |
KR20020036916A (en) | 2000-11-11 | 2002-05-17 | 주승기 | Method of crystallizing a silicon thin film and semiconductor device fabricated thereby |
GB0028867D0 (en) * | 2000-11-28 | 2001-01-10 | Avecia Ltd | Field effect translators,methods for the manufacture thereof and materials therefor |
KR100390522B1 (en) | 2000-12-01 | 2003-07-07 | 피티플러스(주) | Method for fabricating thin film transistor including a crystalline silicone active layer |
US20020170897A1 (en) | 2001-05-21 | 2002-11-21 | Hall Frank L. | Methods for preparing ball grid array substrates via use of a laser |
US6870180B2 (en) | 2001-06-08 | 2005-03-22 | Lucent Technologies Inc. | Organic polarizable gate transistor apparatus and method |
JP3865601B2 (en) * | 2001-06-12 | 2007-01-10 | 日東電工株式会社 | Electromagnetic wave suppression sheet |
JP2003089259A (en) | 2001-09-18 | 2003-03-25 | Hitachi Ltd | Pattern forming method and pattern forming apparatus |
US7351660B2 (en) | 2001-09-28 | 2008-04-01 | Hrl Laboratories, Llc | Process for producing high performance interconnects |
US6946332B2 (en) | 2002-03-15 | 2005-09-20 | Lucent Technologies Inc. | Forming nanoscale patterned thin film metal layers |
US6812509B2 (en) | 2002-06-28 | 2004-11-02 | Palo Alto Research Center Inc. | Organic ferroelectric memory cells |
US6870183B2 (en) | 2002-11-04 | 2005-03-22 | Advanced Micro Devices, Inc. | Stacked organic memory devices and methods of operating and fabricating |
-
2001
- 2001-10-16 DE DE10151036A patent/DE10151036A1/en not_active Withdrawn
-
2002
- 2002-09-05 US US10/492,922 patent/US7298023B2/en not_active Expired - Fee Related
- 2002-09-05 JP JP2003541075A patent/JP4360911B2/en not_active Expired - Fee Related
- 2002-09-05 WO PCT/DE2002/003292 patent/WO2003038921A1/en active Application Filing
- 2002-09-05 EP EP02769910A patent/EP1436850A1/en not_active Withdrawn
Non-Patent Citations (1)
Title |
---|
See references of WO03038921A1 * |
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DE10151036A1 (en) | 2003-05-08 |
WO2003038921A1 (en) | 2003-05-08 |
JP2005507180A (en) | 2005-03-10 |
US20050048803A1 (en) | 2005-03-03 |
JP4360911B2 (en) | 2009-11-11 |
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