EP1414609A4 - Ätzprozess zur mikrobearbeitung von kristallinen materialien und dadurch hergestellte vorrichtungen - Google Patents

Ätzprozess zur mikrobearbeitung von kristallinen materialien und dadurch hergestellte vorrichtungen

Info

Publication number
EP1414609A4
EP1414609A4 EP02756559A EP02756559A EP1414609A4 EP 1414609 A4 EP1414609 A4 EP 1414609A4 EP 02756559 A EP02756559 A EP 02756559A EP 02756559 A EP02756559 A EP 02756559A EP 1414609 A4 EP1414609 A4 EP 1414609A4
Authority
EP
European Patent Office
Prior art keywords
micromachining
etching process
crystalline materials
devices fabricated
fabricated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP02756559A
Other languages
English (en)
French (fr)
Other versions
EP1414609A2 (de
Inventor
Dan A Steinberg
Larry J Rasnake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/071,261 external-priority patent/US6885786B2/en
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of EP1414609A2 publication Critical patent/EP1414609A2/de
Publication of EP1414609A4 publication Critical patent/EP1414609A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4206—Optical features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • G02B2006/12176—Etching
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
    • G02B6/4234—Passive alignment along the optical axis and active alignment perpendicular to the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Mechanical Coupling Of Light Guides (AREA)
  • Micromachines (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • Manufacturing Optical Record Carriers (AREA)
  • Optical Integrated Circuits (AREA)
EP02756559A 2001-07-19 2002-07-19 Ätzprozess zur mikrobearbeitung von kristallinen materialien und dadurch hergestellte vorrichtungen Withdrawn EP1414609A4 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US71261 1998-05-01
US30656801P 2001-07-19 2001-07-19
US306568P 2001-07-19
US10/071,261 US6885786B2 (en) 2001-02-07 2002-02-07 Combined wet and dry etching process for micromachining of crystalline materials
PCT/US2002/023177 WO2003008139A2 (en) 2001-07-19 2002-07-19 Etching process for micromachining crystalline materials and devices fabricated thereby

Publications (2)

Publication Number Publication Date
EP1414609A2 EP1414609A2 (de) 2004-05-06
EP1414609A4 true EP1414609A4 (de) 2012-03-28

Family

ID=26752026

Family Applications (1)

Application Number Title Priority Date Filing Date
EP02756559A Withdrawn EP1414609A4 (de) 2001-07-19 2002-07-19 Ätzprozess zur mikrobearbeitung von kristallinen materialien und dadurch hergestellte vorrichtungen

Country Status (6)

Country Link
EP (1) EP1414609A4 (de)
JP (1) JP2004535304A (de)
KR (1) KR20040017339A (de)
CN (1) CN1545732A (de)
AU (1) AU2002322561A1 (de)
WO (1) WO2003008139A2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6885786B2 (en) 2001-02-07 2005-04-26 Shipley Company, L.L.C. Combined wet and dry etching process for micromachining of crystalline materials
US6907150B2 (en) 2001-02-07 2005-06-14 Shipley Company, L.L.C. Etching process for micromachining crystalline materials and devices fabricated thereby

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0418423A1 (de) * 1989-09-22 1991-03-27 Siemens Aktiengesellschaft Verfahren zum anisotropen Ätzen von Silizium
US5478438A (en) * 1993-01-07 1995-12-26 Matsushita Electronics Corporation Method of etching semiconductor substrate
US6020272A (en) * 1998-10-08 2000-02-01 Sandia Corporation Method for forming suspended micromechanical structures
US6215946B1 (en) * 2000-03-16 2001-04-10 Act Microdevices, Inc. V-groove chip with wick-stop trench for improved fiber positioning

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4706061A (en) * 1986-08-28 1987-11-10 Honeywell Inc. Composition sensor with minimal non-linear thermal gradients
US4784721A (en) * 1988-02-22 1988-11-15 Honeywell Inc. Integrated thin-film diaphragm; backside etch
US5605598A (en) * 1990-10-17 1997-02-25 The Charles Stark Draper Laboratory Inc. Monolithic micromechanical vibrating beam accelerometer with trimmable resonant frequency

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0418423A1 (de) * 1989-09-22 1991-03-27 Siemens Aktiengesellschaft Verfahren zum anisotropen Ätzen von Silizium
US5478438A (en) * 1993-01-07 1995-12-26 Matsushita Electronics Corporation Method of etching semiconductor substrate
US6020272A (en) * 1998-10-08 2000-02-01 Sandia Corporation Method for forming suspended micromechanical structures
US6215946B1 (en) * 2000-03-16 2001-04-10 Act Microdevices, Inc. V-groove chip with wick-stop trench for improved fiber positioning

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO03008139A2 *

Also Published As

Publication number Publication date
KR20040017339A (ko) 2004-02-26
AU2002322561A1 (en) 2003-03-03
EP1414609A2 (de) 2004-05-06
JP2004535304A (ja) 2004-11-25
WO2003008139A3 (en) 2003-11-27
WO2003008139A2 (en) 2003-01-30
CN1545732A (zh) 2004-11-10

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Legal Events

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Extension state: AL LT LV MK RO SI

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: NUVOTRONICS, LLC

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: IP CUBE PARTNERS CO., LTD.

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: SAMSUNG ELECTRONICS CO., LTD

A4 Supplementary search report drawn up and despatched

Effective date: 20120223

RIC1 Information provided on ipc code assigned before grant

Ipc: B23K 1/00 20060101ALI20120217BHEP

Ipc: B81C 1/00 20060101AFI20120217BHEP

17Q First examination report despatched

Effective date: 20120423

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: SAMSUNG ELECTRONICS CO., LTD.

STAA Information on the status of an ep patent application or granted ep patent

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Effective date: 20160106