EP1371070B1 - Thin film ntc thermistor - Google Patents
Thin film ntc thermistor Download PDFInfo
- Publication number
- EP1371070B1 EP1371070B1 EP01918857A EP01918857A EP1371070B1 EP 1371070 B1 EP1371070 B1 EP 1371070B1 EP 01918857 A EP01918857 A EP 01918857A EP 01918857 A EP01918857 A EP 01918857A EP 1371070 B1 EP1371070 B1 EP 1371070B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- thin film
- temperature coefficient
- negative temperature
- coefficient thermistor
- thermistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
- H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
- H01C7/043—Oxides or oxidic compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C13/00—Resistors not provided for elsewhere
- H01C13/02—Structural combinations of resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
- H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering
Definitions
- This invention relates to a method and apparatus for a thin film negative temperature coefficient (NTC) thermistor.
- NTC thin film negative temperature coefficient
- the current process of making a negative temperature coefficient of resistance thermistor has a number of deficiencies.
- a mixture of metal oxide powders is weighed and mixed with organic materials being added as binders. Once mixed, the mixture is ground and tape casted to turn the metal oxide powder into a thin and flexible tape-like material. These thin tapes of metal oxide materials are then cut into pieces, stacked one on top of each other and pressed. The resulting product at this point of the process is called a raw wafer.
- the raw wafer is then fired at approximately 1100°C for nearly seven days. This includes the ramp up and ramp down time to and from that temperature.
- the aforementioned process is considered to be the preprocessing of the thermistor.
- a thick film glass dielectric is sprayed on the top and the bottom of the preprocessed wafer. Then parts are diced to the desired width and broken into strips. Glass dielectric is then sprayed on the edges. The resulting pieces are then cut to a length to obtain the correct and desired resistance values. Termination is then performed on the open edges, that is the edges without glass dielectric, by dipping the edges into platable silver ink. The thermistor is later fired at approximately 650°C and electroplated with Nickel and tin-lead, or other solder material.
- This current process produces a number of problems and deficiencies.
- One problem is that the process takes too long due to the long time period of firing.
- Another problem is that the resistance value is dependent in part upon the physical size of the resulting thermistor.
- Another problem is that because of the thickness of the device, the thermistor takes a longer amount of time to heat up than is desirable.
- Another problem is the resistance tolerance associated with the thermistor. Because the material composition in a particular thermistor can vary, the resistance varies as well, resulting in a tolerance that is greater than desired.
- Yet another objective of the present invention is to provide a thermistor which is predictable.
- Another objective of the present invention is to reduce material costs in manufacturing.
- Another objective of the present invention is to reduce labor costs associated with manufacturing.
- Another objective of the present invention is to make a thermistor with a tighter resistance tolerance.
- Another objective of the present invention is to provide a thermistor with reduced manufacturing time required.
- Another objective of the present invention is to provide a negative temperature coefficient of resistance thermistor that can be manufactured with thin film techniques.
- Another objective of the present invention is to provide a thin film thermistor having the advantage of reduced heating time.
- U.S Patent 3,629,585 is an early attempt at utilizing a thin film resistor clement in a thermistor.
- the '585 patent discloses using a thermistor in an immersed bolometer that is used for measuring the power of radiation, particularly the infrared range.
- the thermistor is comprised of a mixture of metal oxides sputtered on to a dielectric.
- the '585 patent does not disclose adjusting the negative temperature coefficient resistant properties while maintaining a fixed physical package size. Additionally it does not disclose using an alumina substrate.
- the present invention is a method as defined in claim 11 and a negative temperature coefficient thermistor as defined in claim 1.
- the invention provides for a thin film negative temperature coefficient of resistance thermistor.
- the NTC thermistor of the present invention results in the ability to have standardized sizes of resistors in that the resistance value need not be dependent upon the physical size of the thermistor.
- the present invention also provides for the advantages of having tighter resistance tolerance and increased sensitivity to temperature change.
- the present invention provides for reduced material costs, reduced labor costs, and reduced manufacturing time.
- FIG 1 shows the NTC thermistor of the present invention after preprocessing.
- the NTC thermistor 10 has a substrate 12.
- the substrate 12 is alumina that is used in thin film processes.
- the substrate 12 has a layer of silicon nitride 14 such as may be used in a planarization process.
- the present invention contemplates that other substrates and other planarization materials may be used such as are known in the art.
- the present invention also contemplates that no planarization is performed. If planarization is not performed, the performance of the resulting NTC thermistor will not be reduced.
- the preprocessed NTC thermistor also includes a metal oxide film 16.
- the metal oxide film 16 is a mixture of metal oxides such as manganese oxide or nickel oxide.
- the metal oxide film materials selected in the mixture of metal oxide film materials used is selected in part by the desired temperature response.
- one mixture of metal oxide films that may be used contains a mixture of 82% Mn 2 O 3 to 18% NiO.
- the present invention contemplates that other metal oxide films may be used and other mixtures of oxide films may be used as a particular application may suggest.
- This metal oxide mixture film is deposited using sputtering. Other physical vapor deposition (PVD) processes, can also be used, but fall outside the scope of the invention.
- the preprocessed NTC thermistor of the present invention also includes conductor termination 18.
- Conductor termination 18 may consist of platinum, gold, or an alloy, or other conductive metal, that is applied through a sputtering process.
- the preprocessed NTC thermistor of the present invention also includes a passivation layer 20.
- the passivation layer 20 is a deposited scratch resistant material such as silicon nitride, silicon dioxide, or other material such as may be known in the art.
- the passivation layer is used to protect the NTC thermistor's electronic properties from deterioration from external contaminants.
- the present invention also contemplates that the passivation layer need not be used. It is to be appreciated that a thin film NTC thermistor without the passivation layer will not have lower performance.
- FIG. 2 shows the thin film NTC thermistor of the present invention.
- the thin film thermistor 22 is shown as completed.
- the thin film thermistor 22 has a resistive element 24 which is of the metal oxide mixture.
- the thin film NTC thermistor has a moisture barrier 26 to protect the resistive element from deterioration of electronic properties caused by water, ions, and other external contaminants.
- the thin film NTC thermistor also has a polymer dielectric 28.
- the thin film NTC thermistor of the present invention also includes an additional terminal 30 formed through a sputtering process. The present invention contemplates that the nichrome and copper need only be applied to the end and bottom portions of the termination.
- the termination 30 is created through a sputtering process applying nichrome and then copper for the termination.
- the present invention contemplates that other conductive materials can be sputtered.
- the sputtered termination of the present invention is plated with a nickel barrier 32.
- Nickel is known to have a high specific heat capacity. Thus, nickel is used to reduce resistive heating.
- the nickel barrier 32 is also plated with a solder material 34 such as is well known in the art.
- the manufacturing process of the present invention is detailed in Figure 3 .
- the process includes the preprocessing steps 40.
- preprocessing steps 40 first planarization of the substrate occurs.
- the planarization process smoothes the contours of the wafer surface. This can be done by applying silicon nitride to the clean surface of the substrate.
- metal oxide film is deposited in step 44.
- the metal oxide film is deposited after photoprocessing (or solder masking) such as is known in the art.
- the metal oxide film as previously discussed, may be a manganese oxide and nickel oxide mixture at a ratio of 82% to 18%. The precise ratio selected affects the resistance of the thin film NTC thermistor at various temperatures.
- different mixtures of metal oxides may be used to achieve different properties in the resulting NTC thermistor. Modification of the mixture using other metal oxide films at other ratios may be performed. The particular mixture selected based on the desired properties of the thermistor such as the size of the thermistor and the associated curve of the thermistor as is later discussed.
- the terminals for the top conductor are created in step 46 according to a photo process and sputtering step, such as is known in the art.
- the sputtering process results in the terminals 18.
- the next step is the sputtering of the passivation layer in step 48.
- the passivation layer being a deposition of a scratch resistant material such as silicon nitride or silicon dioxide to prevent deterioration as previously discussed.
- the resulting product is heat treated in step 50. Heat treating is used to stabilize the device as is known in the art.
- step 52 laser trimming is used to trim the film.
- step 54 the Tokyo Paint is printed and the Minico Dielectric or other dielectric is also printed. The present invention contemplates that other inks or materials may be used such as are well known in the art.
- marking occurs to prepare for separation.
- step 58 the back conductor is sputtered on to the back of the device.
- step 60 the wafer is broken into strips.
- step 62 sputtering around the conductor is performed.
- step 64 the wafer is broken into chips.
- step 66 the thin film NTC thermistor chip is electroplated with nickel.
- step 68 the thin film NTC thermistor is solder plated.
- the present invention allows for thermistors having different resistances at a given temperature to be the same physical size. This relationship between resistance and temperature generally being quantified with a curve, such as is known in the art.
- This advantage of the present inventions permits NTC thermistors having different curves to be manufactured in the same size.
- a particular size of thermistor may be made from different mixtures of film materials thus yielding different negative temperature coefficient versus temperature curves.
- Figure 4 shows two representative negative temperature coefficient of resistance versus temperature curves.
- the negative temperature coefficient is expressed in percent resistance change per degree celsius.
- the present invention allows two different NTC thermistors having the same physical size to have different curves, such as curve 70 and curve 72. This advantage allows package sizes to be standardized. This standardization may further reduce manufacturing costs. This standardization also simplifies the process of incorporating an NTC thermistor into an electronics design.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Thermistors And Varistors (AREA)
Abstract
Description
- This invention relates to a method and apparatus for a thin film negative temperature coefficient (NTC) thermistor.
- The current process of making a negative temperature coefficient of resistance thermistor has a number of deficiencies. In the current process, a mixture of metal oxide powders is weighed and mixed with organic materials being added as binders. Once mixed, the mixture is ground and tape casted to turn the metal oxide powder into a thin and flexible tape-like material. These thin tapes of metal oxide materials are then cut into pieces, stacked one on top of each other and pressed. The resulting product at this point of the process is called a raw wafer. The raw wafer is then fired at approximately 1100°C for nearly seven days. This includes the ramp up and ramp down time to and from that temperature. The aforementioned process is considered to be the preprocessing of the thermistor. After preprocessing, a thick film glass dielectric is sprayed on the top and the bottom of the preprocessed wafer. Then parts are diced to the desired width and broken into strips. Glass dielectric is then sprayed on the edges. The resulting pieces are then cut to a length to obtain the correct and desired resistance values. Termination is then performed on the open edges, that is the edges without glass dielectric, by dipping the edges into platable silver ink. The thermistor is later fired at approximately 650°C and electroplated with Nickel and tin-lead, or other solder material.
- This current process produces a number of problems and deficiencies. One problem is that the process takes too long due to the long time period of firing.
- Another problem is that the resistance value is dependent in part upon the physical size of the resulting thermistor.
- Another problem is that because of the thickness of the device, the thermistor takes a longer amount of time to heat up than is desirable.
- Another problem is the resistance tolerance associated with the thermistor. Because the material composition in a particular thermistor can vary, the resistance varies as well, resulting in a tolerance that is greater than desired.
- Thus it is a primary objective of the present invention to provide a negative temperature coefficient of resistance thermistor which improves upon the state of the art.
- Yet another objective of the present invention is to provide a thermistor which is predictable.
- Another objective of the present invention is to reduce material costs in manufacturing.
- Another objective of the present invention is to reduce labor costs associated with manufacturing.
- Another objective of the present invention is to make a thermistor with a tighter resistance tolerance.
- Another objective of the present invention is to provide a thermistor with reduced manufacturing time required.
- Another objective of the present invention is to provide a negative temperature coefficient of resistance thermistor that can be manufactured with thin film techniques.
- Another objective of the present invention is to provide a thin film thermistor having the advantage of reduced heating time.
- It is another objective of the present invention to provide a negative temperature coefficient thermistor having the advantage of reduced thickness.
- It is another objective of the present invention to provide a negative temperature coefficient resistor having increased sensitivity to temperature changes.
- These and other objectives, features, or advantages of the present invention will become apparent from the specification and claims.
- U.S Patent 3,629,585 is an early attempt at utilizing a thin film resistor clement in a thermistor. The '585 patent discloses using a thermistor in an immersed bolometer that is used for measuring the power of radiation, particularly the infrared range. The thermistor is comprised of a mixture of metal oxides sputtered on to a dielectric. The '585 patent does not disclose adjusting the negative temperature coefficient resistant properties while maintaining a fixed physical package size. Additionally it does not disclose using an alumina substrate.
- The present invention is a method as defined in claim 11 and a negative temperature coefficient thermistor as defined in claim 1. The invention provides for a thin film negative temperature coefficient of resistance thermistor. The NTC thermistor of the present invention results in the ability to have standardized sizes of resistors in that the resistance value need not be dependent upon the physical size of the thermistor. The present invention also provides for the advantages of having tighter resistance tolerance and increased sensitivity to temperature change. In addition the present invention provides for reduced material costs, reduced labor costs, and reduced manufacturing time.
-
Figure 1 is a side view of the NTC thermistor after preprocessing. -
Figure 2 is a side view of the NTC thermistor of the present invention. -
Figure 3 is a flow chart showing the manufacturing steps involved in manufacturing the NTC thermistor of the present invention. -
Figure 4 is a diagram of a negative temperature coefficient of resistance versus temperature curve of the present invention. - With reference to the drawings, the same reference numerals or letters will indicate the same parts or locations throughout the drawings unless otherwise indicated.
-
Figure 1 shows the NTC thermistor of the present invention after preprocessing. As shown inFigure 1 , theNTC thermistor 10 has asubstrate 12. Thesubstrate 12 is alumina that is used in thin film processes. Thesubstrate 12 has a layer ofsilicon nitride 14 such as may be used in a planarization process. The present invention contemplates that other substrates and other planarization materials may be used such as are known in the art. The present invention also contemplates that no planarization is performed. If planarization is not performed, the performance of the resulting NTC thermistor will not be reduced. The preprocessed NTC thermistor also includes ametal oxide film 16. Themetal oxide film 16 is a mixture of metal oxides such as manganese oxide or nickel oxide. The metal oxide film materials selected in the mixture of metal oxide film materials used is selected in part by the desired temperature response. For example, one mixture of metal oxide films that may be used contains a mixture of 82% Mn2O3 to 18% NiO. The present invention contemplates that other metal oxide films may be used and other mixtures of oxide films may be used as a particular application may suggest. This metal oxide mixture film is deposited using sputtering. Other physical vapor deposition (PVD) processes, can also be used, but fall outside the scope of the invention. - The preprocessed NTC thermistor of the present invention also includes
conductor termination 18.Conductor termination 18 may consist of platinum, gold, or an alloy, or other conductive metal, that is applied through a sputtering process. - The preprocessed NTC thermistor of the present invention also includes a
passivation layer 20. Thepassivation layer 20 is a deposited scratch resistant material such as silicon nitride, silicon dioxide, or other material such as may be known in the art. The passivation layer is used to protect the NTC thermistor's electronic properties from deterioration from external contaminants. The present invention also contemplates that the passivation layer need not be used. It is to be appreciated that a thin film NTC thermistor without the passivation layer will not have lower performance. -
Figure 2 shows the thin film NTC thermistor of the present invention. Thethin film thermistor 22 is shown as completed. Thethin film thermistor 22 has aresistive element 24 which is of the metal oxide mixture. In addition, the thin film NTC thermistor has amoisture barrier 26 to protect the resistive element from deterioration of electronic properties caused by water, ions, and other external contaminants. The thin film NTC thermistor also has apolymer dielectric 28. The thin film NTC thermistor of the present invention also includes anadditional terminal 30 formed through a sputtering process.
The present invention contemplates that the nichrome and copper need only be applied to the end and bottom portions of the termination. Thetermination 30 is created through a sputtering process applying nichrome and then copper for the termination. The present invention contemplates that other conductive materials can be sputtered. The sputtered termination of the present invention is plated with anickel barrier 32. Nickel is known to have a high specific heat capacity. Thus, nickel is used to reduce resistive heating. Thenickel barrier 32 is also plated with asolder material 34 such as is well known in the art. - The manufacturing process of the present invention is detailed in
Figure 3 . The process includes the preprocessing steps 40. In preprocessing steps 40, first planarization of the substrate occurs. The planarization process smoothes the contours of the wafer surface. This can be done by applying silicon nitride to the clean surface of the substrate. After theplanarized step 42, metal oxide film is deposited instep 44. The metal oxide film is deposited after photoprocessing (or solder masking) such as is known in the art. The metal oxide film, as previously discussed, may be a manganese oxide and nickel oxide mixture at a ratio of 82% to 18%. The precise ratio selected affects the resistance of the thin film NTC thermistor at various temperatures. Thus, different mixtures of metal oxides may be used to achieve different properties in the resulting NTC thermistor. Modification of the mixture using other metal oxide films at other ratios may be performed. The particular mixture selected based on the desired properties of the thermistor such as the size of the thermistor and the associated curve of the thermistor as is later discussed. - Next, the terminals for the top conductor are created in
step 46 according to a photo process and sputtering step, such as is known in the art. Referring back toFigure 1 , the sputtering process results in theterminals 18. Referring back toFigure 3 , the next step is the sputtering of the passivation layer instep 48. The passivation layer being a deposition of a scratch resistant material such as silicon nitride or silicon dioxide to prevent deterioration as previously discussed. After the addition of the passivation layer instep 48, the resulting product is heat treated instep 50. Heat treating is used to stabilize the device as is known in the art. - After preprocessing, additional steps are applied to the thermistor. These additional steps are thin film processing steps such as are known in the art as applied to other types of devices. In
step 52, laser trimming is used to trim the film. Instep 54, the Tokyo Paint is printed and the Minico Dielectric or other dielectric is also printed. The present invention contemplates that other inks or materials may be used such as are well known in the art. Instep 56 marking occurs to prepare for separation. Instep 58 the back conductor is sputtered on to the back of the device. Instep 60, the wafer is broken into strips. Instep 62 sputtering around the conductor is performed. Instep 64 the wafer is broken into chips. Instep 66 the thin film NTC thermistor chip is electroplated with nickel. Instep 68 the thin film NTC thermistor is solder plated. - It will be readily apparent to those skilled in the art that different types and mixtures of metal oxide films may be used. It will also be clear to those skilled in the art that different types of substrate materials, passivation layer materials, terminal conductor materials, electroplated barrier materials and solder plating materials may be used, and other variations such as may be required by particular applications and environments, or to develop thermistors with particular properties.
- As previously explained, different compositions of metal film materials can be used to achieve different resistances. Thus the present invention allows for thermistors having different resistances at a given temperature to be the same physical size. This relationship between resistance and temperature generally being quantified with a curve, such as is known in the art. This advantage of the present inventions permits NTC thermistors having different curves to be manufactured in the same size. Thus a particular size of thermistor may be made from different mixtures of film materials thus yielding different negative temperature coefficient versus temperature curves.
-
Figure 4 shows two representative negative temperature coefficient of resistance versus temperature curves. The negative temperature coefficient is expressed in percent resistance change per degree celsius. The present invention allows two different NTC thermistors having the same physical size to have different curves, such ascurve 70 andcurve 72. This advantage allows package sizes to be standardized. This standardization may further reduce manufacturing costs. This standardization also simplifies the process of incorporating an NTC thermistor into an electronics design. - Thus an apparatus and method for a thin film NTC thermistor has been disclosed which solves problems and deficiencies in the art.
Claims (14)
- A thin film negative temperature coefficient thermistor (10):having a sputtered mixture of metal oxide thin film resistor (16) on and alumina substrate wherein the thin film resistor (16) has a standarized physical size and a resistance value, the resistance value being provided by selecting the mixture of metal oxides while maintaining the standarized physical size.
- The thin film negative temperature coefficient thermistor (10) of claim 1 further characterised by the metal oxide film containing manganese oxide.
- The thin film negative temperature coefficient thermistor (10) of claim 1 further characterised by the metal oxide film containing nickel oxide.
- The thin film negative temperature coefficient thermistor (10) of claim 1 further characterised by the metal oxide film containing both manganese oxide and nickel oxide.
- The thin film negative temperature coefficient thermistor (10) of claim 1 wherein the mixture contains a plurality of metal oxides in a ratio selected to provide the resistance value.
- The thin film negative temperature coefficient thermistor of claim 1 wherein the aluminium substrate is planarized.
- The thin film negative temperature coefficient thermistor (10) of claim 6 wherein the step of planarizing is applying nitride film.
- The thin film negative temperature coefficient thermistor of claim 1 includes a passivation layer.
- The thin film negative temperature coefficient thermistor (10) of claim 8 wherein the passivation layer is formed by sputtering silicon nitride film.
- The thin film negative temperature coefficient thermistor of claim 1 includes sputtered conductor terminals.
- A method of manufacturing a thin film negative temperature coefficient thermistor (10) comprising selecting a mixture of metal oxides to provide a negative temperature coefficient of resistance versus temperature curve while maintaining a standardized physical size for the thermistor and sputter depositing the mixture of metal oxides on an alumina substrate using a thin film process to form a resistive element.
- The method of claim 11 wherein the mixture is a mixture of manganese oxide and nickel oxide.
- The method of manufacturing a thin film negative temperature coefficient thermistor (10) of claim 11 further comprising:planarizing a substrate prior to the deposition step; sputtering conductor terminals; sputtering a passivation layer; and heat treating.
- The method of claim 13 wherein the step of planarizing is applying silicon nitride film.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/810,206 US6880234B2 (en) | 2001-03-16 | 2001-03-16 | Method for thin film NTC thermistor |
PCT/US2001/008899 WO2002075751A1 (en) | 2001-03-20 | 2001-03-20 | Thin film ntc thermistor |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1371070A1 EP1371070A1 (en) | 2003-12-17 |
EP1371070B1 true EP1371070B1 (en) | 2011-03-09 |
Family
ID=21742421
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP01918857A Expired - Lifetime EP1371070B1 (en) | 2001-03-16 | 2001-03-20 | Thin film ntc thermistor |
Country Status (2)
Country | Link |
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EP (1) | EP1371070B1 (en) |
WO (1) | WO2002075751A1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102015110607A1 (en) * | 2015-07-01 | 2017-01-05 | Epcos Ag | Method for producing an electrical component |
DE102016210142A1 (en) | 2016-06-08 | 2017-12-14 | Bayerische Motoren Werke Aktiengesellschaft | Memory module with heating means |
KR102500653B1 (en) * | 2018-05-04 | 2023-02-16 | 엘지이노텍 주식회사 | Control circuit of liquid lens, camera module and controlling method for liquid lens |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL6614015A (en) * | 1966-10-05 | 1968-04-08 | ||
FR1600335A (en) | 1968-12-31 | 1970-07-20 | ||
GB2150748B (en) * | 1983-12-03 | 1987-07-22 | Standard Telephones Cables Ltd | Thin film negative temperature coefficient resistor structures |
US5273776A (en) * | 1991-12-06 | 1993-12-28 | Mitsubishi Materials Corporation | Method for forming thermistor thin film |
EP0609776A1 (en) * | 1993-02-05 | 1994-08-10 | SIEMENS MATSUSHITA COMPONENTS GmbH & CO. KG | Sintered ceramic for highly stable thermistors and process for its production |
JPH08306508A (en) * | 1995-05-08 | 1996-11-22 | Nippondenso Co Ltd | Thin film thermistor element and its manufacturing method |
-
2001
- 2001-03-20 EP EP01918857A patent/EP1371070B1/en not_active Expired - Lifetime
- 2001-03-20 WO PCT/US2001/008899 patent/WO2002075751A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2002075751A1 (en) | 2002-09-26 |
EP1371070A1 (en) | 2003-12-17 |
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