EP1333328A3 - Plasmalichtquellevorrichtung, Belichtungsvorrichtung und Steuerverfahren derselben, und Verfahren zur Herstellung einer Vorrichtung - Google Patents
Plasmalichtquellevorrichtung, Belichtungsvorrichtung und Steuerverfahren derselben, und Verfahren zur Herstellung einer Vorrichtung Download PDFInfo
- Publication number
- EP1333328A3 EP1333328A3 EP03250496A EP03250496A EP1333328A3 EP 1333328 A3 EP1333328 A3 EP 1333328A3 EP 03250496 A EP03250496 A EP 03250496A EP 03250496 A EP03250496 A EP 03250496A EP 1333328 A3 EP1333328 A3 EP 1333328A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- light source
- plasma light
- stabilization period
- light emission
- shutter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/02—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diaphragms, collimators
- G21K1/04—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diaphragms, collimators using variable diaphragms, shutters, choppers
- G21K1/043—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diaphragms, collimators using variable diaphragms, shutters, choppers changing time structure of beams by mechanical means, e.g. choppers, spinning filter wheels
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Nanotechnology (AREA)
- High Energy & Nuclear Physics (AREA)
- General Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Plasma & Fusion (AREA)
- Crystallography & Structural Chemistry (AREA)
- Environmental & Geological Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002020212 | 2002-01-29 | ||
JP2002020212A JP3782736B2 (ja) | 2002-01-29 | 2002-01-29 | 露光装置及びその制御方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1333328A2 EP1333328A2 (de) | 2003-08-06 |
EP1333328A3 true EP1333328A3 (de) | 2008-05-21 |
Family
ID=19192155
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP03250496A Withdrawn EP1333328A3 (de) | 2002-01-29 | 2003-01-28 | Plasmalichtquellevorrichtung, Belichtungsvorrichtung und Steuerverfahren derselben, und Verfahren zur Herstellung einer Vorrichtung |
Country Status (3)
Country | Link |
---|---|
US (1) | US20030142198A1 (de) |
EP (1) | EP1333328A3 (de) |
JP (1) | JP3782736B2 (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005308629A (ja) * | 2004-04-23 | 2005-11-04 | Canon Inc | ミラーユニット及びそれの製造方法 |
JP2006128342A (ja) * | 2004-10-28 | 2006-05-18 | Canon Inc | 露光装置、光源装置及びデバイス製造方法 |
US7329884B2 (en) | 2004-11-08 | 2008-02-12 | Nikon Corporation | Exposure apparatus and exposure method |
JP4718189B2 (ja) * | 2005-01-07 | 2011-07-06 | 東京エレクトロン株式会社 | プラズマ処理方法 |
JP4710406B2 (ja) * | 2005-04-28 | 2011-06-29 | ウシオ電機株式会社 | 極端紫外光露光装置および極端紫外光光源装置 |
KR100677985B1 (ko) * | 2005-12-28 | 2007-02-02 | 동부일렉트로닉스 주식회사 | 반도체 제조용 노광장치 |
WO2011013779A1 (ja) * | 2009-07-29 | 2011-02-03 | 株式会社小松製作所 | 極端紫外光源装置、極端紫外光源装置の制御方法、およびそのプログラムを記録した記録媒体 |
JP5702164B2 (ja) * | 2010-03-18 | 2015-04-15 | ギガフォトン株式会社 | 極端紫外光源装置、極端紫外光源装置の制御方法及びターゲット供給装置 |
CN102986302B (zh) * | 2010-07-12 | 2016-06-15 | 诺信公司 | 紫外灯***和用于控制发射的紫外光的方法 |
JP2013065804A (ja) | 2010-12-20 | 2013-04-11 | Gigaphoton Inc | レーザ装置およびそれを備える極端紫外光生成システム |
JP6021454B2 (ja) | 2011-10-05 | 2016-11-09 | ギガフォトン株式会社 | 極端紫外光生成装置および極端紫外光生成方法 |
US8860937B1 (en) * | 2012-10-24 | 2014-10-14 | Kla-Tencor Corp. | Metrology systems and methods for high aspect ratio and large lateral dimension structures |
US8912495B2 (en) | 2012-11-21 | 2014-12-16 | Kla-Tencor Corp. | Multi-spectral defect inspection for 3D wafers |
US9171747B2 (en) | 2013-04-10 | 2015-10-27 | Nordson Corporation | Method and apparatus for irradiating a semi-conductor wafer with ultraviolet light |
US10925142B2 (en) * | 2018-07-31 | 2021-02-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | EUV radiation source for lithography exposure process |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0083399A2 (de) * | 1981-12-31 | 1983-07-13 | International Business Machines Corporation | Vorrichtung zur Bestrahlung eines Mikrostromkreis-Wafers mit elektromagnetischer Strahlung |
US4713675A (en) * | 1985-10-31 | 1987-12-15 | Canon Kabushiki Kaisha | Exposure apparatus |
JPS6381304A (ja) * | 1986-09-26 | 1988-04-12 | Hitachi Ltd | 回折格子露光装置 |
US4922392A (en) * | 1985-12-25 | 1990-05-01 | Canon Kabushiki Kaisha | An original reading apparatus with shielding |
EP1211918A1 (de) * | 2000-12-01 | 2002-06-05 | Enea Ente Per Le Nuove Tecnologie, L'energia E L'ambiente | Methode zum Stoppen von Ionen und Verunreinigungen in Plasma-Strahlungquellen im extremem-ultaviolett oder weichen Röntgenbereich durch Verwendung von Krypton |
EP1248153A2 (de) * | 2001-04-02 | 2002-10-09 | Canon Kabushiki Kaisha | Röntgenbelichtungsapparat |
EP1309234A2 (de) * | 2001-10-25 | 2003-05-07 | National Institute of Advanced Industrial Science and Technology | Verfahren und Vorrichtung zur Entfernung von Hochenergie-Ionen aus EUV-Strahler |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5394451A (en) * | 1991-10-08 | 1995-02-28 | Canon Kabushiki Kaisha | Optical arrangement for exposure apparatus |
EP0598358A1 (de) * | 1992-11-13 | 1994-05-25 | The Furukawa Electric Co., Ltd. | Blech aus Aluminiumlegierung zum Schnelltiefziehen und Verfahren zu ihrer Herstellung |
JP3049680B2 (ja) * | 1993-06-14 | 2000-06-05 | キヤノン株式会社 | ビーム位置検出装置及びこれを用いたシステム |
US6038279A (en) * | 1995-10-16 | 2000-03-14 | Canon Kabushiki Kaisha | X-ray generating device, and exposure apparatus and semiconductor device production method using the X-ray generating device |
JP3284045B2 (ja) * | 1996-04-30 | 2002-05-20 | キヤノン株式会社 | X線光学装置およびデバイス製造方法 |
JP3706691B2 (ja) * | 1996-08-26 | 2005-10-12 | キヤノン株式会社 | X線縮小投影露光装置及びこれを用いた半導体デバイス製造方法 |
KR100525067B1 (ko) * | 1997-01-20 | 2005-12-21 | 가부시키가이샤 니콘 | 노광 장치의 광학 특성 측정 방법, 노광 장치의 동작 방법 및 투영 노광 장치 |
US6235438B1 (en) * | 1997-10-07 | 2001-05-22 | Nikon Corporation | Projection exposure method and apparatus |
-
2002
- 2002-01-29 JP JP2002020212A patent/JP3782736B2/ja not_active Expired - Fee Related
-
2003
- 2003-01-27 US US10/351,507 patent/US20030142198A1/en not_active Abandoned
- 2003-01-28 EP EP03250496A patent/EP1333328A3/de not_active Withdrawn
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0083399A2 (de) * | 1981-12-31 | 1983-07-13 | International Business Machines Corporation | Vorrichtung zur Bestrahlung eines Mikrostromkreis-Wafers mit elektromagnetischer Strahlung |
US4713675A (en) * | 1985-10-31 | 1987-12-15 | Canon Kabushiki Kaisha | Exposure apparatus |
US4922392A (en) * | 1985-12-25 | 1990-05-01 | Canon Kabushiki Kaisha | An original reading apparatus with shielding |
JPS6381304A (ja) * | 1986-09-26 | 1988-04-12 | Hitachi Ltd | 回折格子露光装置 |
EP1211918A1 (de) * | 2000-12-01 | 2002-06-05 | Enea Ente Per Le Nuove Tecnologie, L'energia E L'ambiente | Methode zum Stoppen von Ionen und Verunreinigungen in Plasma-Strahlungquellen im extremem-ultaviolett oder weichen Röntgenbereich durch Verwendung von Krypton |
EP1248153A2 (de) * | 2001-04-02 | 2002-10-09 | Canon Kabushiki Kaisha | Röntgenbelichtungsapparat |
EP1309234A2 (de) * | 2001-10-25 | 2003-05-07 | National Institute of Advanced Industrial Science and Technology | Verfahren und Vorrichtung zur Entfernung von Hochenergie-Ionen aus EUV-Strahler |
Also Published As
Publication number | Publication date |
---|---|
JP2003224052A (ja) | 2003-08-08 |
EP1333328A2 (de) | 2003-08-06 |
JP3782736B2 (ja) | 2006-06-07 |
US20030142198A1 (en) | 2003-07-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
AK | Designated contracting states |
Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT SE SI SK TR |
|
AX | Request for extension of the european patent |
Extension state: AL LT LV MK RO |
|
PUAL | Search report despatched |
Free format text: ORIGINAL CODE: 0009013 |
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AK | Designated contracting states |
Kind code of ref document: A3 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT SE SI SK TR |
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AX | Request for extension of the european patent |
Extension state: AL LT LV MK RO |
|
17P | Request for examination filed |
Effective date: 20081121 |
|
AKX | Designation fees paid |
Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT SE SI SK TR |
|
17Q | First examination report despatched |
Effective date: 20100311 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN |
|
18W | Application withdrawn |
Effective date: 20100719 |