EP1312117A1 - Component comprising a large number of light-emitting-diode chips - Google Patents
Component comprising a large number of light-emitting-diode chipsInfo
- Publication number
- EP1312117A1 EP1312117A1 EP01971631A EP01971631A EP1312117A1 EP 1312117 A1 EP1312117 A1 EP 1312117A1 EP 01971631 A EP01971631 A EP 01971631A EP 01971631 A EP01971631 A EP 01971631A EP 1312117 A1 EP1312117 A1 EP 1312117A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- diode chips
- optoelectronic component
- component according
- luminescence diode
- reflector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004020 luminiscence type Methods 0.000 claims description 32
- 230000005693 optoelectronics Effects 0.000 claims description 11
- 230000005855 radiation Effects 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 2
- 229920003002 synthetic resin Polymers 0.000 claims 1
- 239000000057 synthetic resin Substances 0.000 claims 1
- 239000002184 metal Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Definitions
- the invention relates to an optoelectronic component according to the preamble of patent claim 1.
- Such components are generally known. Since the luminescence diode chips can send light in different colors, the components can be used for multi-colored ones
- the luminescent diodes are also arranged together in a reflector, the component remains relatively small despite the multicolored nature of the emitted light.
- the light output remains below the sum of the light outputs of the individual luminescence diode chips.
- the object of the invention is to specify a component with improved light output.
- the direct line of sight between the luminescence diode chips is interrupted by diaphragms in the component according to the invention, only a small fraction of the radiation emitted by one luminescence diode chip is absorbed by the other luminescence diode chips. These measures eliminate a major cause of the losses that occur.
- the light output of the component according to the invention is therefore essentially equal to the sum of the light outputs of the individual luminescence diode chips. Further advantageous embodiments of the invention are the subject of the dependent claims.
- FIG. 1 shows a plan view of a component that can be equipped with a large number of luminescence diode chips
- FIG. 2 shows a cross-sectional view along the section line II-II in FIG. 1;
- Figure 3 is a cross-sectional view through a modified embodiment of the component.
- FIG. 1 shows a plan view of a component 1, which is explained in more detail below with reference to Figures 1 and 2.
- the component 1 has a housing 2 in which a recess 3 is formed.
- the depression 3 with its bevelled side walls 4 serves as a reflector for the luminescence diode chips 5 arranged in the depression 3.
- the luminescence diode chips 5 are arranged on a contact carrier 6 (leadframe), the connection elements 7 of which protrude laterally from the housing 2.
- the contact carrier 6 is located in sections under cover layers 8, which serve to fix the contact carrier 6.
- the contact carrier 6 is divided into individual landing sites for the luminescence diode chips 5 and connection areas 10 for the bond wires used for bonding the luminescence diode chips 5.
- the bonding wires used to connect the luminescence diode chips 5 are not shown in FIGS. 1 and 2.
- the luminescence diode chips 5 are typically arranged in the housing 2 at a distance of 0.8 mm, measured in each case from the center of the luminescence diode chips 5. Between the landing sites 9 for the luminescence diode chips 5 there is an approximately 0.2 mm wide gap. In the case of FIGS and the embodiment shown in FIG. 2, the gap in the contact carrier 6 between the landing sites 9 with the intermediate wall 11 with walls that are wedge-shaped in cross section is used. The direct visual contact between the LED chips 5 is interrupted by the intermediate wall 11. Therefore, the radiation emanating from one of the luminescence diode chips 5 cannot be directly absorbed by one of the other luminescence diode chips 5. For this reason, the light output of the component 1 is approximately equal to the sum of the light outputs of the individual luminescence diode chips 5.
- the wedge-shaped cross section of the intermediate wall 11 ensures that the light incident on the intermediate wall 11 is reflected to the outside.
- the height of the intermediate wall 11 should advantageously be up to 25%, preferably up to
- the emission characteristic of the luminescence diode chips 5 is therefore decisive. If the luminescence diode chips 5 mainly emit downwards, the height of the intermediate wall 11 can also be smaller than the height of the luminescence diode chips 5.
- the contact carrier 6 is first extrusion-coated with a thermoplastic or thermoset, and then the luminescence diode chips 5 are deposited on the landing sites 9 and bonded.
- the depression 3 is then filled with a resin which is transparent to the radiation from the luminescence diode chips 5.
- the same method can also be used if the contact carrier 6 is replaced by a complete printed circuit board.
- the circuit board in the area of the luminescence diode chips 5 is provided with a housing 2 which is sprayed onto the circuit board.
- FIG. 3 shows a cross-sectional view through a modified exemplary embodiment of component 1.
- housing 2 is first formed and then the required conductor tracks 12 are produced on the surface of housing 2.
- the so-called CIMID technology can be used for this.
- a thin metal layer is first deposited in an aqueous solution on the surface of the housing 2 and then structured with a laser.
- the metal layer structured in this way is then thickened by electroplating.
- the use of this method has the advantage that the intermediate wall 11 can also be covered with a reflective metal layer. This further improves the efficiency of the component 1.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10041686 | 2000-08-24 | ||
DE10041686A DE10041686A1 (en) | 2000-08-24 | 2000-08-24 | Component with a large number of LED chips |
PCT/DE2001/003198 WO2002017401A1 (en) | 2000-08-24 | 2001-08-22 | Component comprising a large number of light-emitting-diode chips |
Publications (1)
Publication Number | Publication Date |
---|---|
EP1312117A1 true EP1312117A1 (en) | 2003-05-21 |
Family
ID=7653703
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP01971631A Withdrawn EP1312117A1 (en) | 2000-08-24 | 2001-08-22 | Component comprising a large number of light-emitting-diode chips |
Country Status (7)
Country | Link |
---|---|
US (1) | US7435997B2 (en) |
EP (1) | EP1312117A1 (en) |
JP (1) | JP2004517465A (en) |
CN (1) | CN1447984A (en) |
DE (1) | DE10041686A1 (en) |
TW (1) | TW516228B (en) |
WO (1) | WO2002017401A1 (en) |
Families Citing this family (64)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4071089B2 (en) * | 2002-11-06 | 2008-04-02 | 株式会社小糸製作所 | Vehicle headlamp |
DE10261365B4 (en) * | 2002-12-30 | 2006-09-28 | Osram Opto Semiconductors Gmbh | Optoelectronic component with a plurality of radiation-emitting semiconductor chips |
US6995402B2 (en) * | 2003-10-03 | 2006-02-07 | Lumileds Lighting, U.S., Llc | Integrated reflector cup for a light emitting device mount |
JP4774201B2 (en) * | 2003-10-08 | 2011-09-14 | 日亜化学工業株式会社 | Package molded body and semiconductor device |
JP2006054224A (en) * | 2004-08-10 | 2006-02-23 | Sanyo Electric Co Ltd | Light-emitting device |
JP4922555B2 (en) * | 2004-09-24 | 2012-04-25 | スタンレー電気株式会社 | LED device |
JP2006093612A (en) * | 2004-09-27 | 2006-04-06 | Kyocera Corp | Light emitting device and illuminator |
DE102004056705B4 (en) * | 2004-09-30 | 2012-03-15 | Osram Opto Semiconductors Gmbh | Luminescence diode arrangement and method for monitoring LED chips |
US20060125716A1 (en) * | 2004-12-10 | 2006-06-15 | Wong Lye Y | Light-emitting diode display with compartment |
KR100663906B1 (en) * | 2005-03-14 | 2007-01-02 | 서울반도체 주식회사 | Light emitting apparatus |
WO2006128318A1 (en) | 2005-03-31 | 2006-12-07 | Neobulb Technologies, Inc. | A high power led illuminating equipment having high thermal diffusivity |
JP4744178B2 (en) * | 2005-04-08 | 2011-08-10 | シャープ株式会社 | Light emitting diode |
JP2007036073A (en) * | 2005-07-29 | 2007-02-08 | Hitachi Displays Ltd | Lighting device and display unit using it |
US8044412B2 (en) | 2006-01-20 | 2011-10-25 | Taiwan Semiconductor Manufacturing Company, Ltd | Package for a light emitting element |
JP2007201361A (en) * | 2006-01-30 | 2007-08-09 | Shinko Electric Ind Co Ltd | Semiconductor device, and method of manufacturing semiconductor device |
DE102006015377B4 (en) * | 2006-04-03 | 2018-06-14 | Ivoclar Vivadent Ag | Semiconductor radiation source and light curing device |
US9780268B2 (en) | 2006-04-04 | 2017-10-03 | Cree, Inc. | Submount based surface mount device (SMD) light emitter components and methods |
USD738832S1 (en) | 2006-04-04 | 2015-09-15 | Cree, Inc. | Light emitting diode (LED) package |
KR20090031370A (en) | 2006-05-23 | 2009-03-25 | 크리 엘이디 라이팅 솔루션즈, 인크. | Lighting device |
TWM302123U (en) * | 2006-06-13 | 2006-12-01 | Lighthouse Technology Co Ltd | The stand structure of light-emitting diode |
US7909482B2 (en) * | 2006-08-21 | 2011-03-22 | Innotec Corporation | Electrical device having boardless electrical component mounting arrangement |
JP2008060129A (en) * | 2006-08-29 | 2008-03-13 | Nec Lighting Ltd | Full-color light-emitting diode |
CN101523620B (en) * | 2006-09-29 | 2012-06-06 | 罗姆股份有限公司 | Semiconductor light emitting device |
TWM318795U (en) * | 2006-12-18 | 2007-09-11 | Lighthouse Technology Co Ltd | Package structure |
US9061450B2 (en) * | 2007-02-12 | 2015-06-23 | Cree, Inc. | Methods of forming packaged semiconductor light emitting devices having front contacts by compression molding |
US8421088B2 (en) * | 2007-02-22 | 2013-04-16 | Sharp Kabushiki Kaisha | Surface mounting type light emitting diode |
US8604506B2 (en) * | 2007-02-22 | 2013-12-10 | Sharp Kabushiki Kaisha | Surface mounting type light emitting diode and method for manufacturing the same |
US8408773B2 (en) * | 2007-03-19 | 2013-04-02 | Innotec Corporation | Light for vehicles |
US7712933B2 (en) * | 2007-03-19 | 2010-05-11 | Interlum, Llc | Light for vehicles |
KR101309761B1 (en) * | 2007-03-29 | 2013-09-17 | 서울반도체 주식회사 | Light emitting element |
WO2009000104A1 (en) * | 2007-06-25 | 2008-12-31 | Jenshyan Chen | The package structure of led |
EP2172702A4 (en) * | 2007-06-25 | 2013-01-09 | Neobulb Technologies Inc | A light-emitting diode lighting device |
CN100487310C (en) * | 2007-07-06 | 2009-05-13 | 深圳市泓亚光电子有限公司 | Tabulate highpower light source with multiple chips |
EP2031657A1 (en) * | 2007-08-31 | 2009-03-04 | ILED Photoelectronics, Inc. | Package structure for a high-luminance light source |
JP2009141254A (en) * | 2007-12-10 | 2009-06-25 | Rohm Co Ltd | Semiconductor light-emitting apparatus |
EP2232592B1 (en) * | 2007-12-12 | 2013-07-17 | Innotec Corporation | Method for overmolding a circuit board |
KR100992778B1 (en) | 2008-05-23 | 2010-11-05 | 엘지이노텍 주식회사 | Light emitting device package and method for manufacturing the same |
DE102008025923B4 (en) * | 2008-05-30 | 2020-06-18 | Osram Opto Semiconductors Gmbh | Radiation-emitting device |
US7871842B2 (en) | 2008-10-03 | 2011-01-18 | E. I. Du Pont De Nemours And Company | Production process for surface-mounting ceramic LED package, surface-mounting ceramic LED package produced by said production process, and mold for producing said package |
KR101025961B1 (en) | 2008-11-05 | 2011-03-30 | 삼성엘이디 주식회사 | Led package module |
US20120267674A1 (en) * | 2009-09-24 | 2012-10-25 | Kyocera Corporation | Mounting substrate, light emitting body, and method for manufacturing mounting substrate |
TW201143152A (en) | 2010-03-31 | 2011-12-01 | Asahi Glass Co Ltd | Substrate for light-emitting element and light-emitting device employing it |
KR101039994B1 (en) | 2010-05-24 | 2011-06-09 | 엘지이노텍 주식회사 | Light emitting device and light unit having thereof |
KR101676670B1 (en) * | 2010-07-01 | 2016-11-16 | 엘지이노텍 주식회사 | Light Emitting Diode |
WO2012023246A1 (en) * | 2010-08-20 | 2012-02-23 | シャープ株式会社 | Light emitting diode package |
JP2012104739A (en) * | 2010-11-12 | 2012-05-31 | Toshiba Corp | Light-emitting element |
WO2012147650A1 (en) * | 2011-04-27 | 2012-11-01 | シャープ株式会社 | Led module, backlight unit, and liquid crystal display device |
KR101852388B1 (en) * | 2011-04-28 | 2018-04-26 | 엘지이노텍 주식회사 | Light emitting device package |
KR101788723B1 (en) * | 2011-04-28 | 2017-10-20 | 엘지이노텍 주식회사 | Light emitting device package |
KR101871501B1 (en) * | 2011-07-29 | 2018-06-27 | 엘지이노텍 주식회사 | Light emitting device package and lighting system having the same |
US9735198B2 (en) | 2012-03-30 | 2017-08-15 | Cree, Inc. | Substrate based light emitter devices, components, and related methods |
US10222032B2 (en) | 2012-03-30 | 2019-03-05 | Cree, Inc. | Light emitter components and methods having improved electrical contacts |
US10134961B2 (en) * | 2012-03-30 | 2018-11-20 | Cree, Inc. | Submount based surface mount device (SMD) light emitter components and methods |
US9022631B2 (en) | 2012-06-13 | 2015-05-05 | Innotec Corp. | Flexible light pipe |
JP6102187B2 (en) | 2012-10-31 | 2017-03-29 | 日亜化学工業株式会社 | Light emitting device package and light emitting device using the same |
JP6107136B2 (en) | 2012-12-29 | 2017-04-05 | 日亜化学工業株式会社 | LIGHT EMITTING DEVICE PACKAGE, LIGHT EMITTING DEVICE INCLUDING THE SAME, AND LIGHTING DEVICE EQUIPPED WITH THE LIGHT EMITTING DEVICE |
JP6484396B2 (en) | 2013-06-28 | 2019-03-13 | 日亜化学工業株式会社 | Light emitting device package and light emitting device using the same |
CN104613337A (en) * | 2014-09-23 | 2015-05-13 | 深圳市三浦半导体有限公司 | Double-color LED lamp bead and lamp set |
WO2017010851A1 (en) | 2015-07-16 | 2017-01-19 | 엘지이노텍(주) | Light-emitting element package |
JP6952945B2 (en) * | 2016-03-25 | 2021-10-27 | スージョウ レキン セミコンダクター カンパニー リミテッド | Light emitting element package and lighting device |
KR20180000976A (en) * | 2016-06-24 | 2018-01-04 | 서울반도체 주식회사 | Light emitting diode package |
US11592166B2 (en) | 2020-05-12 | 2023-02-28 | Feit Electric Company, Inc. | Light emitting device having improved illumination and manufacturing flexibility |
US11876042B2 (en) | 2020-08-03 | 2024-01-16 | Feit Electric Company, Inc. | Omnidirectional flexible light emitting device |
CN114334930B (en) * | 2021-12-30 | 2022-09-27 | 惠州市艾斯谱光电有限公司 | Lighting lamp and lamp panel thereof |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1974893U (en) | 1967-04-26 | 1967-12-14 | Telefunken Patent | ARRANGEMENT FOR THE ENLARGED IMAGE OF A SCALE. |
JPS593983A (en) * | 1982-06-29 | 1984-01-10 | Toshiba Corp | Photodetection semiconductor device |
JPS5967674A (en) | 1982-10-12 | 1984-04-17 | Toshiba Corp | Light emitting display device |
JPS59112665A (en) | 1982-12-18 | 1984-06-29 | Toshiba Corp | Photosemiconductor device |
JPS6381873A (en) | 1986-09-26 | 1988-04-12 | Toshiba Corp | Light emitting device |
DE3719338A1 (en) | 1987-06-10 | 1988-12-29 | Yue Wen Cheng | LED DISPLAY DEVICE |
JPH0258089A (en) | 1988-08-24 | 1990-02-27 | Matsushita Electric Ind Co Ltd | Light emission body with diffusion part and its manufacture |
JPH071804B2 (en) * | 1989-02-15 | 1995-01-11 | シャープ株式会社 | Light emitting element array light source |
JPH0741046Y2 (en) * | 1989-10-27 | 1995-09-20 | スタンレー電気株式会社 | LED signal light for vehicle |
JPH05275747A (en) | 1992-03-26 | 1993-10-22 | Rohm Co Ltd | Segment type character display unit |
JPH0677540A (en) * | 1992-08-24 | 1994-03-18 | Sanyo Electric Co Ltd | Optical semiconductor device |
JPH06216411A (en) * | 1993-01-20 | 1994-08-05 | Rohm Co Ltd | Led lamp |
US5534718A (en) * | 1993-04-12 | 1996-07-09 | Hsi-Huang Lin | LED package structure of LED display |
US5340993A (en) * | 1993-04-30 | 1994-08-23 | Motorola, Inc. | Optocoupler package wth integral voltage isolation barrier |
JP2790237B2 (en) | 1993-06-28 | 1998-08-27 | 日亜化学工業株式会社 | Multicolor light emitting device |
JPH07121123A (en) * | 1993-08-31 | 1995-05-12 | Sanyo Electric Co Ltd | Display device |
JPH07176791A (en) | 1993-12-17 | 1995-07-14 | Rohm Co Ltd | Light emitting display |
DE19746893B4 (en) * | 1997-10-23 | 2005-09-01 | Siemens Ag | Optoelectronic component with heat sink in the base part and method for the production |
JP3893735B2 (en) | 1998-04-24 | 2007-03-14 | 松下電器産業株式会社 | Light emitting device |
EP1158761A1 (en) * | 2000-05-26 | 2001-11-28 | GRETAG IMAGING Trading AG | Photographic image acquisition device using led chips |
-
2000
- 2000-08-24 DE DE10041686A patent/DE10041686A1/en not_active Withdrawn
-
2001
- 2001-08-22 WO PCT/DE2001/003198 patent/WO2002017401A1/en active Search and Examination
- 2001-08-22 US US10/362,554 patent/US7435997B2/en not_active Expired - Fee Related
- 2001-08-22 CN CN01814562.0A patent/CN1447984A/en active Pending
- 2001-08-22 EP EP01971631A patent/EP1312117A1/en not_active Withdrawn
- 2001-08-22 JP JP2002521368A patent/JP2004517465A/en active Pending
- 2001-08-23 TW TW090120714A patent/TW516228B/en not_active IP Right Cessation
Non-Patent Citations (1)
Title |
---|
See references of WO0217401A1 * |
Also Published As
Publication number | Publication date |
---|---|
DE10041686A1 (en) | 2002-03-14 |
TW516228B (en) | 2003-01-01 |
US7435997B2 (en) | 2008-10-14 |
JP2004517465A (en) | 2004-06-10 |
CN1447984A (en) | 2003-10-08 |
US20040056265A1 (en) | 2004-03-25 |
WO2002017401A1 (en) | 2002-02-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2002017401A1 (en) | Component comprising a large number of light-emitting-diode chips | |
DE19918370B4 (en) | LED white light source with lens | |
WO2016034540A1 (en) | Light-emitting diode component | |
DE102016119002B4 (en) | OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING OPTOELECTRONIC DEVICE | |
WO2008040297A1 (en) | Optical element for a light-emitting diode, light-emitting diode, led arrangement and method for producing an led arrangement | |
DE102012216852A1 (en) | A light-emitting device, a lighting device including the light-emitting device, and a method of manufacturing the light-emitting device | |
DE102012210743A1 (en) | Lighting device e.g. LED-lighting module, has light sensor arranged at distance opposite to semiconductor light sources that are designed with different colors, and photoconductive optic arranged upstream of light sensor | |
DE10145492A1 (en) | White light LED with differently colored light emitter layers of macroscopic structure widths arranged on a diffusing screen | |
WO2013135696A1 (en) | Radiation-emitting semiconductor component, lighting device and display device | |
DE3633203A1 (en) | LIGHT EMISSION DIODES (LED) - DISPLAY DEVICE | |
EP2765445B1 (en) | LED unit with lens | |
DE112018000656T5 (en) | LED assembly and method of making the same | |
DE202007019330U1 (en) | Coating / cover for optoelectronic components | |
WO2017072294A1 (en) | Optoelectronic component and method for producing same | |
DE112013000768B4 (en) | LED unit | |
WO2019002098A1 (en) | Optoelectronic semiconductor component and assembly having an optoelectronic semiconductor component | |
DE102018104382A1 (en) | OPTOELECTRONIC COMPONENT AND MANUFACTURING METHOD | |
DE10261365B4 (en) | Optoelectronic component with a plurality of radiation-emitting semiconductor chips | |
DE102020112389A1 (en) | OPTOELECTRONIC COMPONENT AND METHOD FOR MANUFACTURING THE SAME | |
WO2009152908A2 (en) | Light-emitting chip and light-emitting apparatus having such a light-emitting chip | |
DE3833315A1 (en) | Light-emitting diode (LED) display device | |
DE102016208489A1 (en) | METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT AND OPTOELECTRONIC COMPONENT | |
DE112017008008B4 (en) | LIGHT-EMITTING COMPONENT, METHOD FOR PRODUCING A LIGHT-EMITTING COMPONENT AND METHOD FOR PRODUCING A PLURALITY OF LIGHT-EMITTING COMPONENTS | |
WO2013056916A2 (en) | Pad for a lighting device | |
DE10032839A1 (en) | LED element has housing with partial cover by reflective layer to change emission direction |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20030131 |
|
AK | Designated contracting states |
Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR |
|
RBV | Designated contracting states (corrected) |
Designated state(s): AT BE CH DE FR GB LI |
|
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: OSRAM OPTO SEMICONDUCTORS GMBH |
|
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: OSRAM OPTO SEMICONDUCTORS GMBH |
|
17Q | First examination report despatched |
Effective date: 20090901 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20160301 |