EP1287179A2 - Method for producing three-dimensional, selectively metallized parts and a three-dimensional, selectively metallized part - Google Patents
Method for producing three-dimensional, selectively metallized parts and a three-dimensional, selectively metallized partInfo
- Publication number
- EP1287179A2 EP1287179A2 EP01943070A EP01943070A EP1287179A2 EP 1287179 A2 EP1287179 A2 EP 1287179A2 EP 01943070 A EP01943070 A EP 01943070A EP 01943070 A EP01943070 A EP 01943070A EP 1287179 A2 EP1287179 A2 EP 1287179A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- plastic
- metallized
- areas
- germination
- solvent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
- C23C18/1608—Process or apparatus coating on selected surface areas by direct patterning from pretreatment step, i.e. selective pre-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1635—Composition of the substrate
- C23C18/1639—Substrates other than metallic, e.g. inorganic or organic or non-conductive
- C23C18/1641—Organic substrates, e.g. resin, plastic
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
- C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/28—Sensitising or activating
- C23C18/30—Activating or accelerating or sensitising with palladium or other noble metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
- H01R12/70—Coupling devices
- H01R12/71—Coupling devices for rigid printing circuits or like structures
- H01R12/712—Coupling devices for rigid printing circuits or like structures co-operating with the surface of the printed circuit or with a coupling device exclusively provided on the surface of the printed circuit
- H01R12/716—Coupling device provided on the PCB
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
- H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
- Y10T428/31681—Next to polyester, polyamide or polyimide [e.g., alkyd, glue, or nylon, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
- Y10T428/31692—Next to addition polymer from unsaturated monomers
- Y10T428/31696—Including polyene monomers [e.g., butadiene, etc.]
Definitions
- a product can be injection molded in two steps using two different plastics (two-component injection molding), one plastic being metalizable and the other plastic not.
- two-component injection molding two different plastics
- a part is first injected from one plastic, after which this part is placed in a mold and completed by injection molding the other plastic. If you then metallize the product using a certain method, one plastic is metallized and the other is not.
- Selective metallization can also be achieved by using light-sensitive paints. The entire product is first provided with a thin conductive metal layer using a chemical process.
- a photoresist is applied and it is produced by selective exposure and developing a pattern in the varnish.
- This pattern is galvanically amplified and the photoresist can then be removed. Now you can remove the initial layer in an etching process, so that the grown pattern remains.
- Another option for selective metallization is made possible by the use of lasers. After a full-surface metallization, the unwanted metal layers can be removed locally by laser ablation (cf. report on the 15th Ulm discussion on May 6 and 7, 1993 in Neu-Ulm, Eugen G. Leuze Verlag,
- the invention is based on the knowledge that all-over germination of parts produced by two-component injection molding can be selectively removed again by means of a solvent.
- This solvent must not attack the first plastic used in the areas to be metallized, while it should easily dissolve the second plastic used in the areas not to be metallized and thereby selectively remove the germination in these areas.
- Subsequent currentless metal deposition then results in selective metallization of the areas consisting of the first plastic, since there is still nucleation there.
- the embodiment according to claim 2 enables galvanic reinforcement of the electrolessly deposited metal layers.
- a Metallization reinforced in this way is particularly expedient for conductor structures.
- the embodiment according to claim 3, with the seeding in a palladium system, enables a particularly effective catalyzed electroless metal deposition in the areas to be metallized.
- the development according to claim 4 enables selective removal of the germination with lye as a solvent.
- This takes advantage of the fact that a first group of plastics is stable in lye, while a second group of plastics is soluble in lye.
- PA and PS are preferably used in accordance with claims 5 and 6.
- LCP, PEI, PET and PBT are preferably used as the second plastic which is soluble in lye.
- solvents based on KOH or NaOH are preferably used according to claims 11 and 12. In addition to the use of pure KOH and pure NaOH, this should also be understood to mean solvent mixtures which contain KOH or NaOH as the essential component.
- the development according to claim 13 enables selective removal of the germination with acid as a solvent.
- LCP, PEI, PET or PBT are preferably used as the first plastic that is resistant to acid.
- PA or PS are preferably used according to claims 18 and 19.
- solvents based on HCl or H2SO or mixtures of CrO 3 and H2SO4 or mixtures of CCI 3 -COOH and H2SO4 are preferably used for the selective removal of the germination.
- at Claims 20 and 21 are to be understood in addition to pure HC1 or pure H2SO4 as well as solvent mixtures which contain HC1 or H2SO4 as essential components.
- the claim 24 relates to a three-dimensional selectively metallized part, which consists of a first plastic in the metallized areas and a second plastic in the non-metallized areas.
- the first plastic and the second plastic have special properties that are defined by their solubility in a given solvent.
- the first plastic is at least largely insoluble in a given specific solvent, while the second plastic is at least largely soluble in the same solvent.
- the first plastic is resistant to alkali, while the second plastic is soluble to alkali.
- the first plastic can also be resistant to acid, while the second plastic is soluble in acid. With these material properties, selective disinfection in lye or in acid can be carried out in the manufacture of the three-dimensional, selectively metallized parts.
- FIG. 1 shows a three-dimensional part produced by two-component injection molding
- FIG. 2 shows the part according to FIG. 1 after germination over the entire area.
- FIG. 3 shows the part according to FIG. 2 after selective removal of the germination
- Figure 4 shows the part of Figure 3 after a selective metallization and Figure 5 shows a coaxial connector.
- a cube-shaped part T is shown, which was produced by two-component injection molding from a first plastic and a second different plastic.
- the areas consisting of the first plastic and later to be metallized are designated by B1, while the areas consisting of the second plastic and not to be metallized are designated by B2.
- Figure 2 shows the part T shown in Figure 1 after the wet chemical germination.
- the all-over germination of part T is indicated by small particles labeled BK.
- the germination BK is formed by palladium seeds.
- FIG. 3 shows the part T shown in FIG. 2 after selective removal of the germination BK in the areas B2 that are not to be metallized.
- This selective removal of the germination BK takes place by immersing the part T in a solvent in which the first plastic is insoluble and in which the second plastic is soluble.
- the germination BK is detached here, while it remains in the areas B1 to be metallized (see FIG. 1).
- FIG. 4 shows the part T shown in FIG. 3 after the selective metallization of the areas B2.
- the surfaces in the areas B1 (see FIG. 1), which are catalytically active due to the finely distributed germination BK, trigger the deposition of a base metallization when immersed in a chemically electroless bath. After the germination BK has overgrown, the deposition continues autocatalytically until the resulting metallization M has the desired layer thickness.
- the measurement tallization M reinforced by a subsequent galvanic metal deposition.
- FIG. 5 shows a coaxial connector, the base of which forms a selectively metallized part T1.
- This part T1 largely corresponds to the part T described above, the selective metallization M also being produced in the manner described.
- the connector sleeves SH of the coaxial connector are inserted into the front of the part T1, while integrally molded and slightly protruding noses N are provided on the outer lower edge of the part T1.
- the lugs N consist of the first plastic, i.e. the metallization M also extends over the lugs ⁇ . Also at the lower edge of part T1 there are cutouts A, into which punched metal parts MT are inserted.
- metal parts MT are electrically conductively connected to the inner conductors of the connector sleeves SH, which are also not recognizable, in a manner not recognizable in the drawing. It can also be seen from FIG. 5 that the lower surfaces of the lugs N and the metal parts MT lie at the same height in one plane and thus enable SMD mounting on a printed circuit board or the like.
- Example 1 The part T shown in FIG. 1 is produced by two-component injection molding, the areas B1 to be metallized made of PA (polyamide) and the areas B2 not to be metallized made of LCP (liquid crystal polymer).
- the germination BK according to FIG. 2 is generated wet-chemically in a palladium system.
- the subsequent selective removal of the palladium nuclei in the areas B2 according to FIG. 3 is carried out by immersing the part T in a solution of KOH (Potash lye) in water.
- the metallization M was then produced in accordance with FIG. 4 by electroless copper deposition and subsequent galvanic copper deposition in commercially available baths.
- the areas B2 that are not to be metallized consist of PEI (polyether id).
- Example 4 In a departure from example 2, the areas B2 which are not to be metallized consist of PEI (polyetherimide).
- the areas B2 which are not to be metallized are made of PET (polyethylene terephthalate).
- the areas B2 which are not to be metallized consist of PBT (polybutylene terephthalate).
- a solution of NaOH (sodium hydroxide solution) in water is used for the selective removal of the palladium seeds.
- Example 9 In a departure from Example 2, a solution of ⁇ aOH (sodium hydroxide solution) in water is used to selectively remove the palladium seeds.
- ⁇ aOH sodium hydroxide solution
- Palladium nuclei used a solution of NaOH (sodium hydroxide solution) in water.
- Example 4 In a departure from Example 4, a solution of NaOH (sodium hydroxide solution) in water is used to selectively remove the palladium seeds.
- NaOH sodium hydroxide solution
- ⁇ aOH sodium hydroxide solution
- Example 6 a solution of NaOH (sodium hydroxide solution) in water is used to selectively remove the palladium seeds.
- the part T shown in FIG. 1 is produced by two-component injection molding, the areas B1 to be metallized being made of LCP (liquid crystal polymer) and the areas B2 not being metallized made of PA (polyamide).
- the germination BK according to FIG. 2 is generated wet-chemically in a palladium system.
- the subsequent selective removal of the palladium nuclei in the areas B2 according to FIG. 3 is carried out by immersing the part T in a solution of concentrated hydrochloric acid in water with a proportion of 50% by volume of both components.
- the metallization M according to FIG. 4 was then produced by electroless copper deposition and subsequent galvanic copper deposition in commercially available baths.
- Example 14 Example 14:
- the areas B1 to be metallized consist of PET (polyethylene terephthalate).
- Example 16 In contrast to Example 13, the areas B1 to be metallized consist of PBT (polybutylene terephthalate).
- the areas B2 that are not to be metallized consist of PS (polystyrene).
- the areas B2 not to be metallized consist of PS (polystyrene).
- the areas B2 not to be metallized consist of PS (polystyrene).
- the areas B2 not to be metallized consist of PS (polystyrene).
- Example 21 In contrast to Example 13, a solution of 50% H2SO4 (sulfuric acid) in water is used to selectively remove the palladium seeds.
- H2SO4 sulfuric acid
- Example 22 In contrast to Example 14, a solution of 50% H2SO4 (sulfuric acid) in water is used to selectively remove the palladium seeds.
- Example 23 In contrast to Example 14, a solution of 50% H2SO4 (sulfuric acid) in water is used to selectively remove the palladium seeds.
- Example 15 In a departure from Example 15, a solution of 50% H2SO (sulfuric acid) in water is used to selectively remove the palladium seeds.
- Example 16 In a departure from Example 16, a solution of 50% H2SO (sulfuric acid) in water is used to selectively remove the palladium seeds.
- Example 17 In a departure from Example 17, a solution of 50% H2SO4 (sulfuric acid) in water is used to selectively remove the palladium seeds.
- Example 18 In contrast to Example 18, a solution of 50% H2SO4 (sulfuric acid) in water is used to selectively remove the palladium seeds.
- Example 20 In a departure from Example 20, a solution of 50% H2SO4 (sulfuric acid) in water is used to selectively remove the palladium seeds.
- Example 30 In a departure from Example 13, a solution of 300 g / 1 CrO3 (chromium trioxide) and 300 g / 1 H2SO4 (sulfuric acid) in water is used to selectively remove the palladium seeds.
- 300 g / 1 CrO3 chromium trioxide
- 300 g / 1 H2SO4 sulfuric acid
- Example 14 In a departure from Example 14, a solution of 300 g / 1 CrO3 (chromium trioxide) and 300 g / 1 H2SO4 (sulfuric acid) in water is used to selectively remove the palladium seeds.
- 300 g / 1 CrO3 chromium trioxide
- 300 g / 1 H2SO4 sulfuric acid
- Example 15 In a departure from Example 15, a solution of 300 g / 1 CrO 3 (chromium trioxide) and 300 g / 1 H2SO4 (sulfuric acid) in water is used to selectively remove the palladium seeds.
- 300 g / 1 CrO 3 chromium trioxide
- 300 g / 1 H2SO4 sulfuric acid
- Example 16 a solution of 300 g / 1 CrO3 (chromium trioxide) and 300 g / 1 H2SO4 (sulfuric acid) in water is used to selectively remove the palladium seeds.
- Example 17 In a departure from Example 17, a solution of 300 g / 1 CrO3 (chromium trioxide) and 300 g / 1 H2SO4 (sulfuric acid) in water is used to selectively remove the palladium seeds.
- 300 g / 1 CrO3 chromium trioxide
- 300 g / 1 H2SO4 sulfuric acid
- Example 18 In a departure from Example 18, a solution of 300 g / 1 CrO 3 (chromium trioxide) and 300 g / 1 H2SO4 (sulfuric acid) in water is used to selectively remove the palladium seeds.
- Example 19 In a departure from Example 19, a solution of 300 g / 1 CrO3 (chromium trioxide) and 300 g / 1 H2SO4 (sulfuric acid) in water is used to selectively remove the palladium seeds.
- 300 g / 1 CrO3 chromium trioxide
- 300 g / 1 H2SO4 sulfuric acid
- Example 37 In a departure from Example 20, a solution of 300 g / 1 CrO 3 (chromium trioxide) and 300 g / 1 H2SO (sulfuric acid) in water is used to selectively remove the palladium seeds.
- 300 g / 1 CrO 3 chromium trioxide
- 300 g / 1 H2SO sulfuric acid
- a solution of 150 g / l CCI3-COOH (trichloroacetic acid) and 150 g / l H2SO4 (sulfuric acid) in water is used to selectively remove the palladium seeds.
- a solution of 150 g / l CCI3-COOH (trichloroacetic acid) and 150 g / l H2SO4 (sulfuric acid) in water is used to selectively remove the palladium seeds.
- Example 15 In a departure from Example 15, a solution of 150 g / l CCI3-COOH (trichloroacetic acid) and 150 g / l H2SO4 (sulfuric acid) in water is used to selectively remove the palladium seeds.
- Example 40 In contrast to Example 16, a solution of 150 g / l CCI3-COOH (trichloroacetic acid) and 150 g / l H2SO4 (sulfuric acid) in water is used to selectively remove the palladium seeds.
- Example 41 In contrast to Example 17, a solution of 150 g / l CCI3-COOH (trichloroacetic acid) and 150 g / l H2SO4 (sulfuric acid) in water is used to selectively remove the palladium seeds.
- Example 42 In contrast to Example 17, a solution of 150 g / l CCI3-COOH (trichloroacetic acid) and 150 g / l H2SO4 (sulfuric acid) in water is used to selectively remove the palladium seeds.
- Example 42 In contrast to Example 17, a solution of 150 g / l CCI3-COOH (trichloroacetic acid) and 150 g / l H2SO4 (sulfuric acid) in water is used to selectively remove the palladium seeds.
- Example 43 In a departure from Example 18, a solution of 150 g / l CCI3-COOH (trichloroacetic acid) and 150 g / l H2SO (sulfuric acid) in water is used to selectively remove the palladium seeds.
- Example 43 In a departure from Example 18, a solution of 150 g / l CCI3-COOH (trichloroacetic acid) and 150 g / l H2SO (sulfuric acid) in water is used to selectively remove the palladium seeds.
- 150 g / l CCI3-COOH trichloroacetic acid
- 150 g / l H2SO sulfuric acid
- Example 19 In a departure from Example 19, a solution of 150 g / l CCI3-COOH (trichloroacetic acid) and 150 g / l H2SO4 (sulfuric acid) in water is used to selectively remove the palladium seeds.
- Example 20 In a departure from Example 20, a solution of 150 g / l CCI3-COOH (trichloroacetic acid) and 150 g / l H2SO4 (sulfuric acid) in water is used to selectively remove the palladium seeds.
- the treatment time for removing the germination was in the range of 5 minutes.
- the temperature of the solvents used was in the range of 50 ° C.
- the concentration of the solvents used was set in such a way that a reliable removal of the germination BK in the areas B2 that were not to be metallized was ensured.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemically Coating (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
According to the invention, the parts (T) are produced by two-component injection moulding, whereby the areas to be metallized consist of one plastic and the areas which are not to be metallized (B2) consist of a second plastic. After the entire surface of the parts (T) has been seeded, said seeding is selectively removed in the areas which are not to be metallized (B2), using a solvent. The first plastic is insoluble in the solvent and the second plastic is soluble in said solvent. The selective metallization (M) is then carried out using a currentless metal deposition process which is optionally an electroplating process.
Description
Beschreibungdescription
Verfahren zur Herstellung von dreidimensionalen selektiv metallisierten Teilen und dreidimensionales selektiv metalli- siertes TeilProcess for producing three-dimensional selectively metallized parts and three-dimensional selectively metallized part
Die Metallisierung von Kunststoffen mit Hilfe der Galvanotechnik ermöglicht es, dass das Produkt ohne zusätzliche Maßnahmen vollständig metallisiert wird. Für die meisten Anwen- düngen ist jedoch nur eine partielle Metallisierung des Produktes erwünscht. Für die selektive Metallisierung gibt es verschiedene Möglichkeiten. So kann man ein Produkt in zwei Schritten mit zwei verschiedenen Kunststoffen Spritzgießen (Zweikomponenten-Spritzgießen) , wobei der eine Kunststoff me- tallisierbar ist und der andere Kunststoff nicht. Hierbei wird zuerst ein Teil aus dem einen Kunststoff gespritzt, worauf dieses Teil in eine Form gelegt und durch Spritzen des anderen Kunststoffs vervollständigt wird. Wenn man das Produkt danach mit einer bestimmten Methode metallisiert, wird der eine Kunststoff metallisiert und der andere nicht. Eine selektive Metallisierung lässt sich auch erreichen, indem man lichtempfindliche Lacke verwendet. Hierbei wird das gesamte Produkt zuerst durch einen chemischen Prozess mit einer dünnen leitenden Metallschicht versehen. Anschließend wird ein Photolack aufgebracht und es wird durch selektives Belichten und entwickeln ein Muster in dem Lack hergestellt. Dieses Muster wird galvanisch verstärkt und danach kann der Photolack entfernt werden. Nun kann man die Anfangsschicht in einem Ätzprozess entfernen, so dass das aufgewachsene Muster übrigbleibt. Eine weitere Möglichkeit zur selektiven Metallisierung wird durch den Einsatz von Lasern ermöglicht. Hier können nach einer ganzflächigen Metallisierung die nicht erwünschten Metallschichten durch Laserablation örtlich entfernt werden (vgl. Berichtsband über das 15. Ulmer Gespräch am 6. und 7. Mai 1993 in Neu-Ulm, Eugen G. Leuze Verlag,The metallization of plastics with the help of electroplating technology enables the product to be completely metallized without additional measures. For most applications, however, only partial metallization of the product is desired. There are various options for selective metallization. For example, a product can be injection molded in two steps using two different plastics (two-component injection molding), one plastic being metalizable and the other plastic not. Here, a part is first injected from one plastic, after which this part is placed in a mold and completed by injection molding the other plastic. If you then metallize the product using a certain method, one plastic is metallized and the other is not. Selective metallization can also be achieved by using light-sensitive paints. The entire product is first provided with a thin conductive metal layer using a chemical process. Then a photoresist is applied and it is produced by selective exposure and developing a pattern in the varnish. This pattern is galvanically amplified and the photoresist can then be removed. Now you can remove the initial layer in an etching process, so that the grown pattern remains. Another option for selective metallization is made possible by the use of lasers. After a full-surface metallization, the unwanted metal layers can be removed locally by laser ablation (cf. report on the 15th Ulm discussion on May 6 and 7, 1993 in Neu-Ulm, Eugen G. Leuze Verlag,
Saulgau, Seiten 114 bis 120., A.F.P.M van Veggel "Haftfeste Metallisierung von technischen Kunststoffen") .
Bei einer Variante der Herstellung selektiv metallisierter Produkte durch Zweikomponenten-Spritzgießen werden ein erster kernkatalysierter Kunststoff und zweiter nicht kernkataly- sierter Kunststoff verwendet. Dadurch dass dem ersten Kunststoff die Keime bereits beigemengt sind, ist hier eine nasschemische Bekeimung des Spritzgießteils nicht notwendig. Bei der nachfolgenden Metallisierung in einem chemischen Metall- abscheidungsbad ergibt sich dann eine selektive Metallab- Scheidung in denjenigen Bereichen, die aus dem kernkatalysierten Kunststoff bestehen.Saulgau, pages 114 to 120., AFPM van Veggel "Adhesive metallization of engineering plastics"). In a variant of the production of selectively metallized products by two-component injection molding, a first core-catalyzed plastic and a second non-core-catalyzed plastic are used. Because the germs have already been added to the first plastic, wet chemical germination of the injection molded part is not necessary here. The subsequent metallization in a chemical metal deposition bath then results in a selective metal deposition in those areas which consist of the core-catalyzed plastic.
Der in den Ansprüchen 1 und 24 angegebenen Erfindung liegt das Problem zugrunde, eine einfache und wirtschaftliche se- lektive Metallisierung von dreidimensionalen Teilen zu ermöglichen.The invention specified in claims 1 and 24 is based on the problem of enabling simple and economical selective metallization of three-dimensional parts.
Der Erfindung liegt die Erkenntnis zugrunde, dass eine ganzflächige Bekeimung von durch Zweikomponenten-Spritzgießen hergestellten Teilen selektiv durch ein Lösungsmittel wieder entfernt werden kann. Dieses Lösungsmittel darf den in den zu metallisierenden Bereichen verwendeten ersten Kunststoff nicht angreifen, während es den in den nicht zu metallisierenden Bereichen verwendeten zweiten Kunststoff leicht auflö- sen soll und dadurch die Bekeimung in diesen Bereichen selektiv wieder entfernt. Bei einer nachfolgenden stromlosen Me- tallabscheidung ergibt sich dann eine selektive Metallisierung der aus dem ersten Kunststoff bestehenden Bereiche, da dort eine Bekeimung noch vorhanden ist.The invention is based on the knowledge that all-over germination of parts produced by two-component injection molding can be selectively removed again by means of a solvent. This solvent must not attack the first plastic used in the areas to be metallized, while it should easily dissolve the second plastic used in the areas not to be metallized and thereby selectively remove the germination in these areas. Subsequent currentless metal deposition then results in selective metallization of the areas consisting of the first plastic, since there is still nucleation there.
Vorteilhafte Ausgestaltungen des erfindungsgemäßen Verfahrens zur Herstellung von dreidimensionalen selektiv metallisierten Teilen gehen aus den Unteransprüchen 2 bis 23 hervor.Advantageous refinements of the method according to the invention for the production of three-dimensional selectively metallized parts emerge from subclaims 2 to 23.
Die Ausgestaltung nach Anspruch 2 ermöglicht eine galvanische Verstärkung der stromlos abgeschiedenen Metallschichten. Eine
derart verstärkte Metallisierung ist insbesondere für Leiterstrukturen zweckmäßig.The embodiment according to claim 2 enables galvanic reinforcement of the electrolessly deposited metal layers. A Metallization reinforced in this way is particularly expedient for conductor structures.
Die Ausgestaltung gemäß Anspruch 3 ermöglicht mit der Bekei- mung in einem Palladium-System eine besonders effektive katalysierte stromlose Metallabsc eidung in den zu metallisierenden Bereichen.The embodiment according to claim 3, with the seeding in a palladium system, enables a particularly effective catalyzed electroless metal deposition in the areas to be metallized.
Die Weiterbildung nach Anspruch 4 ermöglicht eine selektive Entfernung der Bekeimung mit Lauge als Lösungsmittel. Hierbei wird die Tatsache ausgenutzt, dass eine erste Gruppe von Kunststoffen in Lauge beständig ist, während eine zweite Gruppe von Kunststoffen in Lauge löslich ist. Als erster Kunststoff, der in Lauge beständig ist, werden gemäß den An- Sprüchen 5 und 6 vorzugsweise PA und PS verwendet. Als zweiter Kunststoff der in Lauge löslich ist, werden gemäß den Ansprüchen 7 bis 10 vorzugsweise LCP, PEI, PET und PBT verwendet. Zur selektiven Entfernung der Bekeimung werden dabei gemäß den Ansprüchen 11 und 12 vorzugsweise Lösungsmittel auf der Basis von KOH oder NaOH verwendet. Neben der Verwendung - von reiner KOH und reiner NaOH sollen darunter auch Lösungs- mittelmischungen verstanden werden, die als maßgebliche Komponente KOH oder NaOH enthalten.The development according to claim 4 enables selective removal of the germination with lye as a solvent. This takes advantage of the fact that a first group of plastics is stable in lye, while a second group of plastics is soluble in lye. As the first plastic that is resistant to alkali, PA and PS are preferably used in accordance with claims 5 and 6. LCP, PEI, PET and PBT are preferably used as the second plastic which is soluble in lye. For the selective removal of the germination, solvents based on KOH or NaOH are preferably used according to claims 11 and 12. In addition to the use of pure KOH and pure NaOH, this should also be understood to mean solvent mixtures which contain KOH or NaOH as the essential component.
Die Weiterbildung gemäß Anspruch 13 ermöglicht eine selektive Entfernung der Bekeimung mit Säure als Lösungsmittel . Hierbei wird die Tatsache ausgenutzt, dass eine erste Gruppe von Kunststoffen in Säure beständig ist, während eine zweite Gruppe von Kunststoffen in Säure löslich ist. Als erster Kunststoff, der in Säure beständig ist, werden gemäß den Ansprüchen 14 bis 17 vorzugsweise LCP, PEI, PET oder PBT verwendet. Als zweiter Kunststoff, der in Säure löslich ist, werden gemäß den Ansprüchen 18 und 19 vorzugsweise PA oder PS verwendet. Zur selektiven Entfernung der Bekeimung werden ge- maß den Ansprüchen 20 bis 23 vorzugsweise Lösungsmittel auf der Basis von HCl oder H2SO oder Mischungen aus Crθ3 und H2SO4 oder Mischungen aus CCI3-COOH und H2SO4 verwendet. Bei
den Ansprüchen 20 und 21 sollen dabei neben reiner HC1 oder reiner H2SO4 auch Lösungsmittelmischungen verstanden werden, die als maßgebliche Komponenten HC1 oder H2SO4 enthalten.The development according to claim 13 enables selective removal of the germination with acid as a solvent. This takes advantage of the fact that a first group of plastics is resistant to acid, while a second group of plastics is soluble in acid. LCP, PEI, PET or PBT are preferably used as the first plastic that is resistant to acid. As the second plastic, which is soluble in acid, PA or PS are preferably used according to claims 18 and 19. According to claims 20 to 23, solvents based on HCl or H2SO or mixtures of CrO 3 and H2SO4 or mixtures of CCI 3 -COOH and H2SO4 are preferably used for the selective removal of the germination. at Claims 20 and 21 are to be understood in addition to pure HC1 or pure H2SO4 as well as solvent mixtures which contain HC1 or H2SO4 as essential components.
Der Anspruch 24 betrifft ein dreidimensionales selektiv metallisiertes Teil, welches in den metallisierten Bereichen aus einem ersten Kunststoff und in den nicht metallisierten Bereichen aus einem zweiten Kunststoff besteht. Der erste Kunststoff und der zweite Kunststoff weisen dabei besondere Eigenschaften auf, die durch die Löslichkeit in einem vorgegebenen Lösungsmittel definiert sind. Der erste Kunststoff ist dabei in einem vorgegebenen bestimmten Lösungsmittel zumindest weitgehend unlöslich, während der zweite Kunststoff in dem gleichen Lösungsmittel zumindest weitgehend löslich ist. So ist beispielsweise der erste Kunststoff in Lauge beständig, während der zweite Kunststoff in Lauge löslich ist. Der erste Kunststoff kann aber auch in Säure beständig sein, während der zweite Kunststoff in Säure löslich ist. Mit diesen Materialeigenschaften kann bei der Herstellung der drei- dimensionalen selektiv metallisierten Teile eine selektive Entkeimung in Lauge oder in Säure durchgeführt werden.The claim 24 relates to a three-dimensional selectively metallized part, which consists of a first plastic in the metallized areas and a second plastic in the non-metallized areas. The first plastic and the second plastic have special properties that are defined by their solubility in a given solvent. The first plastic is at least largely insoluble in a given specific solvent, while the second plastic is at least largely soluble in the same solvent. For example, the first plastic is resistant to alkali, while the second plastic is soluble to alkali. However, the first plastic can also be resistant to acid, while the second plastic is soluble in acid. With these material properties, selective disinfection in lye or in acid can be carried out in the manufacture of the three-dimensional, selectively metallized parts.
Im folgenden werden Ausführungsbeispiele der Erfindung anhand der Zeichnung näher erläutert. Es zeigen:Exemplary embodiments of the invention are explained in more detail below with reference to the drawing. Show it:
Figur 1 ein durch Zweikomponenten-Spritzgießen hergestelltes dreidimensionales Teil,FIG. 1 shows a three-dimensional part produced by two-component injection molding,
Figur 2 das Teil gemäß Figur 1 nach einer ganzflächigen Be- keimung, .FIG. 2 shows the part according to FIG. 1 after germination over the entire area.
Figur 3 das Teil gemäß Figur 2 nach einer selektiven Entfernung der Bekeimung,3 shows the part according to FIG. 2 after selective removal of the germination,
Figur 4 das Teil gemäß Figur 3 nach einer selektiven Metallisierung und
Figur 5 einen Koaxialstecker.Figure 4 shows the part of Figure 3 after a selective metallization and Figure 5 shows a coaxial connector.
In Figur 1 ist ein würfelförmiges Teil T dargestellt, welches durch Zweikomponenten-Spritzgießen aus einem ersten Kunststoff und einem zweiten unterschiedlichen Kunststoff hergestellt wurde. Die aus dem ersten Kunststoff bestehenden und später zu metallisierenden Bereiche sind mit Bl bezeichnet, während die aus dem zweiten Kunststoff bestehenden und nicht zu metallisierenden Bereiche mit B2 bezeichnet sind.In Figure 1, a cube-shaped part T is shown, which was produced by two-component injection molding from a first plastic and a second different plastic. The areas consisting of the first plastic and later to be metallized are designated by B1, while the areas consisting of the second plastic and not to be metallized are designated by B2.
Figur 2 zeigt das in Figur 1 dargestellte Teil T nach der nasschemischen Bekeimung. Die ganzflächige Bekeimung des Teils T ist dabei durch kleine mit BK bezeichnete Partikel angedeutet. Bei einer Behandlung in einem Palladium-System wird die Bekeimung BK durch Palladiumkeime gebildet.Figure 2 shows the part T shown in Figure 1 after the wet chemical germination. The all-over germination of part T is indicated by small particles labeled BK. When treated in a palladium system, the germination BK is formed by palladium seeds.
Figur 3 zeigt das in Figur 2 dargestellte Teil T nach einer selektiven Entfernung der Bekeimung BK in den nicht zu metallisierenden Bereichen B2. Diese selektive Entfernung der Be- keimung BK erfolgt durch Eintauchen des Teiles T in ein Lösungsmittel, in welchem der erste Kunststoff unlöslich ist und in welchem der zweite Kunststoff löslich ist. Durch die Anlösung des zweiten Kunststoffs in den nicht zu metallisierenden Bereichen B2 wird hier die Bekeimung BK abgelöst, wäh- rend sie in den zu metallisierenden Bereichen Bl (vgl. Figur 1) verbleibt.FIG. 3 shows the part T shown in FIG. 2 after selective removal of the germination BK in the areas B2 that are not to be metallized. This selective removal of the germination BK takes place by immersing the part T in a solvent in which the first plastic is insoluble and in which the second plastic is soluble. By dissolving the second plastic in the areas B2 that are not to be metallized, the germination BK is detached here, while it remains in the areas B1 to be metallized (see FIG. 1).
Figur 4 zeigt das in Figur 3 dargestellte Teil T nach der selektiven Metallisierung der Bereiche B2. Die durch die fein verteilte Bekeimung BK katalytisch wirksamen Oberflächen in den Bereichen Bl (vgl. Figur 1) lösen beim Eintauchen in ein chemisch stromlos arbeitendes Bad die Abscheidung einer Grundmetallisierung aus. Nach dem Überwachsen der Bekeimung BK setzt sich die Abscheidung autokatalytisch fort, bis die resultierende Metallisierung M die gewünschte Schichtdicke aufweist. Im beschriebenen Ausführungsbeispiel wurde die Me-
tallisierung M noch durch eine anschließende galvanische Me- tallabscheidung verstärkt.FIG. 4 shows the part T shown in FIG. 3 after the selective metallization of the areas B2. The surfaces in the areas B1 (see FIG. 1), which are catalytically active due to the finely distributed germination BK, trigger the deposition of a base metallization when immersed in a chemically electroless bath. After the germination BK has overgrown, the deposition continues autocatalytically until the resulting metallization M has the desired layer thickness. In the exemplary embodiment described, the measurement tallization M reinforced by a subsequent galvanic metal deposition.
Figur 5 zeigt einen Koaxialstecker, dessen Basis ein selektiv metallisiertes Teil Tl bildet. Dieses Teil Tl entspricht weitgehend dem vorstehend beschriebenen Teil T, wobei auch die selektive Metallisierung M in der beschriebenen Weise erzeugt wird. Die Steckerhülsen SH des Koaxialsteckers sind in die Frontseite des Teils Tl eingesetzt, während am äußeren unteren Rand des Teils Tl integral angeformte und leicht nach unten hervorstehende Nasen N vorgesehen sind. Die Nasen N bestehen aus dem ersten Kunststoff, d.h. die Metallisierung M erstreckt sich auch über die Nasen Ν. Ebenfalls am unteren Rand des Teils Tl befinden sich Aussparungen A, in welche gestanzte Metallteile MT eingesetzt sind. Diese Metallteile MT sind auf in der Zeichnung nicht erkennbare Weise elektrisch leitend mit den ebenfalls nicht erkennbaren Innenleitern der Steckerhülsen SH verbunden. Aus Figur 5 ist auch ersichtlich, dass die unteren Flächen der Nasen N und der Metallteile MT auf gleicher Höhe in einer Ebene liegen und somit eine SMD- Montage auf einer Leiterplatte oder dergl. ermöglichen.Figure 5 shows a coaxial connector, the base of which forms a selectively metallized part T1. This part T1 largely corresponds to the part T described above, the selective metallization M also being produced in the manner described. The connector sleeves SH of the coaxial connector are inserted into the front of the part T1, while integrally molded and slightly protruding noses N are provided on the outer lower edge of the part T1. The lugs N consist of the first plastic, i.e. the metallization M also extends over the lugs Ν. Also at the lower edge of part T1 there are cutouts A, into which punched metal parts MT are inserted. These metal parts MT are electrically conductively connected to the inner conductors of the connector sleeves SH, which are also not recognizable, in a manner not recognizable in the drawing. It can also be seen from FIG. 5 that the lower surfaces of the lugs N and the metal parts MT lie at the same height in one plane and thus enable SMD mounting on a printed circuit board or the like.
Im folgenden werden verschiedene Beispiele zur Herstellung der in den Figuren 1 bis 4 dargestellten Teile T beschrieben, wobei sich diese Beispiele selbstverständlich auch auf die Herstellung des in Figur 5 dargestellten Koaxialsteckers ü- bertragen lassen.Various examples for the production of the parts T shown in FIGS. 1 to 4 are described below, these examples, of course, also being applicable to the production of the coaxial connector shown in FIG. 5.
Beispiel 1: Das in Figur 1 dargestellte Teil T wird durch Zweikomponenten-Spritzgießen hergestellt, wobei die zu metallisierenden Bereiche Bl aus PA (Polyamid) und die nicht zu metallisierenden Bereiche B2 aus LCP (Liquid Crystal Polymer) bestehen. Die Bekeimung BK gemäß Figur 2 wird nasschemisch in einem Palladium-System erzeugt. Die anschließende selektive Entfernung der Palladiumkeime in den Bereichen B2 gemäß Figur 3 erfolgt durch Eintauchen des Teils T in eine Lösung von KOH
(Kalilauge) in Wasser. Nach einem Spülvorgang wurde dann die Metallisierung M gemäß Figur 4 durch stromlose Kupferabschei- dung und anschließende galvanische Kupferabscheidung in handelsüblichen Bädern hergestellt.Example 1: The part T shown in FIG. 1 is produced by two-component injection molding, the areas B1 to be metallized made of PA (polyamide) and the areas B2 not to be metallized made of LCP (liquid crystal polymer). The germination BK according to FIG. 2 is generated wet-chemically in a palladium system. The subsequent selective removal of the palladium nuclei in the areas B2 according to FIG. 3 is carried out by immersing the part T in a solution of KOH (Potash lye) in water. After a rinsing process, the metallization M was then produced in accordance with FIG. 4 by electroless copper deposition and subsequent galvanic copper deposition in commercially available baths.
Beispiel 2:Example 2:
Abweichend vom Beispiel 1 bestehen die zu metallisierendenDeviating from Example 1, there are those to be metallized
Bereiche Bl aus PS (Polystyrene) .Areas BL made of PS (polystyrene).
Beispiel 3 :Example 3:
Abweichend vom Beispiel 1 bestehen die nicht zu metallisierenden Bereiche B2 aus PEI (Polyetheri id) .In contrast to Example 1, the areas B2 that are not to be metallized consist of PEI (polyether id).
Beispiel 4: Abweichend vom Beispiel 2 bestehen die nicht zu metallisierenden Bereiche B2 aus PEI (Polyetherimid) .Example 4: In a departure from example 2, the areas B2 which are not to be metallized consist of PEI (polyetherimide).
Beispiel 5:Example 5:
Abweichend vom Beispiel 1 bestehen die nicht zu metallisier- enden Berieche B2 aus PET (Polyethylenterephthalat) .In contrast to Example 1, the areas B2 which are not to be metallized are made of PET (polyethylene terephthalate).
Beispiel 6:Example 6:
Abweichend vom Beispiel 1 bestehen die nicht zu metallisierenden Berieche B2 aus PBT (Polybutylenterephthalat) .In a departure from example 1, the areas B2 which are not to be metallized consist of PBT (polybutylene terephthalate).
Beispiel 7:Example 7:
Abweichend vom Beispiel 1 wird zur selektiven Entfernung der Palladiumkeime eine Lösung von NaOH (Natronlauge) in Wasser verwendet .In a departure from example 1, a solution of NaOH (sodium hydroxide solution) in water is used for the selective removal of the palladium seeds.
Beispiel 8:Example 8:
Abweichend vom Beispiel 2 wird zur selektiven Entfernung der Palladiumkeime eine Lösung von ΝaOH (Natronlauge) in Wasser verwendet .
Beispiel 9:In a departure from Example 2, a solution of ΝaOH (sodium hydroxide solution) in water is used to selectively remove the palladium seeds. Example 9:
Abweichend vom Beispiel 3 wird zur selektiven Entfernung derIn a departure from example 3, the
Palladiumkeime eine Lösung von NaOH (Natronlauge) in Wasser verwendet.Palladium nuclei used a solution of NaOH (sodium hydroxide solution) in water.
Beispiel 10;Example 10;
Abweichend vom Beispiel 4 wird zur selektiven Entfernung der Palladiumkeime eine Lösung von NaOH (Natronlauge ) in Wasser verwendet .In a departure from Example 4, a solution of NaOH (sodium hydroxide solution) in water is used to selectively remove the palladium seeds.
Beispiel 11:Example 11:
Abweichend vom Beispiel 5 wird zur selektiven Entfernung der Palladiumkeime eine Lösung von ΝaOH (Natronlauge) in Wasser verwendet .In a departure from Example 5, a solution of ΝaOH (sodium hydroxide solution) in water is used to selectively remove the palladium seeds.
Beispiel 12:Example 12:
Abweichend vom Beispiel 6 wird zur selektiven Entfernung der Palladiumkeime eine Lösung von NaOH (Natronlauge) in Wasser verwendet .In a departure from Example 6, a solution of NaOH (sodium hydroxide solution) in water is used to selectively remove the palladium seeds.
Beispiel 13:Example 13:
Das in Figur 1 dargestellte Teil T wird durch Zweikomponenten-Spritzgießen hergestellt, wobei die zu metallisierenden Bereiche Bl aus LCP (Liquid Crystal Polymer) und die nicht zu metallisierenden Bereiche B2 aus PA (Polyamid) bestehen. Die Bekeimung BK gemäß Figur 2 wird nasschemisch in einem Palladiumsystem erzeugt. Die anschließende selektive Entfernung der Palladiumkeime in den Bereichen B2 gemäß Figur 3 erfolgt durch Eintauchen des Teils T in eine Lösung aus konzentrier- ter Salzsäure in Wasser mit Anteilen beider Komponenten von jeweils 50 Vol.-%. Nach einem Spülvorgang wurde dann die Metallisierung M gemäß Figur 4 durch stromlose Kupferabschei- dung und anschließende galvanische Kupferabscheidung in handelsüblichen Bädern hergestellt.
Beispiel 14:The part T shown in FIG. 1 is produced by two-component injection molding, the areas B1 to be metallized being made of LCP (liquid crystal polymer) and the areas B2 not being metallized made of PA (polyamide). The germination BK according to FIG. 2 is generated wet-chemically in a palladium system. The subsequent selective removal of the palladium nuclei in the areas B2 according to FIG. 3 is carried out by immersing the part T in a solution of concentrated hydrochloric acid in water with a proportion of 50% by volume of both components. After a rinsing process, the metallization M according to FIG. 4 was then produced by electroless copper deposition and subsequent galvanic copper deposition in commercially available baths. Example 14:
Abweichend vom Beispiel 13 bestehen die zu metallisierendenDeviating from Example 13, there are those to be metallized
Bereiche Bl aus PEI (Polyetherimid)Areas Bl made of PEI (polyetherimide)
Beispiel 15:Example 15:
Abweichend vom Beispiel 13 bestehen die zu metallisierenden Bereiche Bl aus PET (Polyethylenterephthalat) •In a departure from example 13, the areas B1 to be metallized consist of PET (polyethylene terephthalate).
Beispiel 16: Abweichend vom Beispiel 13 bestehen die zu metallisierenden Bereiche Bl aus PBT (Polybutylenterephthalat) .Example 16: In contrast to Example 13, the areas B1 to be metallized consist of PBT (polybutylene terephthalate).
Beispiel 17:Example 17:
Abweichend vom Beispiel 13 bestehen die nicht zu metallisier- enden Bereiche B2 aus PS (Polystyrene) .In contrast to Example 13, the areas B2 that are not to be metallized consist of PS (polystyrene).
Beispiel 18:Example 18:
Abweichend vom Beispiel 14 bestehen die nicht zu metallisierenden Bereiche B2 aus PS (Polystyrene) .In a departure from example 14, the areas B2 not to be metallized consist of PS (polystyrene).
Beispiel 19:Example 19:
Abweichend vom Beispiel 15 bestehen die nicht zu metallisierenden Bereiche B2 aus PS (Polystyrene) .In a departure from Example 15, the areas B2 not to be metallized consist of PS (polystyrene).
Beispiel 20:Example 20:
Abweichend vom Beispiel 16 bestehen die nicht zu metallisierenden Bereiche B2 aus PS (Polystyrene) .In a departure from example 16, the areas B2 not to be metallized consist of PS (polystyrene).
Beispiel 21: Abweichend vom Beispiel 13 wird zur selektiven Entfernung der Palladiumkeime eine Lösung von 50 %iger H2SO4 (Schwefelsäure) in Wasser verwendet.Example 21: In contrast to Example 13, a solution of 50% H2SO4 (sulfuric acid) in water is used to selectively remove the palladium seeds.
Beispiel 22: Abweichend vom Beispiel 14 wird zur selektiven Entfernung der Palladiumkeime eine Lösung von 50 %iger H2SO4 (Schwefelsäure) in Wasser verwendet.
Beispiel 23 :Example 22: In contrast to Example 14, a solution of 50% H2SO4 (sulfuric acid) in water is used to selectively remove the palladium seeds. Example 23:
Abweichend vom Beispiel 15 wird zur selektiven Entfernung der Palladiumkeime eine Lösung von 50 %iger H2SO (Schwefelsäure) in Wasser verwendet.In a departure from Example 15, a solution of 50% H2SO (sulfuric acid) in water is used to selectively remove the palladium seeds.
Beispiel 24:Example 24:
Abweichend vom Beispiel 16 wird zur selektiven Entfernung der Palladiumkeime eine Lösung von 50 %iger H2SO (Schwefelsäure) in Wasser verwendet.In a departure from Example 16, a solution of 50% H2SO (sulfuric acid) in water is used to selectively remove the palladium seeds.
Beispiel 25:Example 25:
Abweichend vom Beispiel 17 wird zur selektiven Entfernung der Palladiumkeime eine Lösung von 50 %iger H2SO4 (Schwefelsäure) in Wasser verwendet.In a departure from Example 17, a solution of 50% H2SO4 (sulfuric acid) in water is used to selectively remove the palladium seeds.
Beispiel 26:Example 26:
Abweichend vom Beispiel 18 wird zur selektiven Entfernung der Palladiumkeime eine Lösung von 50 %iger H2SO4 (Schwefelsäure) in Wasser verwendet.In contrast to Example 18, a solution of 50% H2SO4 (sulfuric acid) in water is used to selectively remove the palladium seeds.
Beispiel 27:Example 27:
Abweichend vom' Beispiel 19 wird zur selektiven Entfernung der Palladiumkeime eine Lösung von 50 %iger H2SO4 (Schwefelsäure) in Wasser verwendet.Deviating from the 'Example 19 for the selective removal of the palladium seeds, a solution of 50% H2SO4 (sulfuric acid) in water is used.
Beispiel 28:Example 28:
Abweichend vom Beispiel 20 wird zur selektiven Entfernung der Palladiumkeime eine Lösung von 50 θiger H2SO4 (Schwefelsäure) in Wasser verwendet.In a departure from Example 20, a solution of 50% H2SO4 (sulfuric acid) in water is used to selectively remove the palladium seeds.
Beispiel 29:Example 29:
Abweichend vom Beispiel 13 wird zur selektiven Entfernung der Palladiumkeime eine Lösung aus 300 g/1 Crθ3 (Chromtrioxid) und 300 g/1 H2SO4 (Schwefelsäure) in Wasser verwendet.
Beispiel 30:In a departure from Example 13, a solution of 300 g / 1 CrO3 (chromium trioxide) and 300 g / 1 H2SO4 (sulfuric acid) in water is used to selectively remove the palladium seeds. Example 30:
Abweichend vom Beispiel 14 wird zur selektiven Entfernung der Palladiumkeime eine Lösung aus 300 g/1 Crθ3 (Chromtrioxid) und 300 g/1 H2SO4 (Schwefelsäure) in Wasser verwendet.In a departure from Example 14, a solution of 300 g / 1 CrO3 (chromium trioxide) and 300 g / 1 H2SO4 (sulfuric acid) in water is used to selectively remove the palladium seeds.
Beispiel 31:Example 31:
Abweichend vom Beispiel 15 wird zur selektiven Entfernung der Palladiumkeime eine Lösung aus 300 g/1 Crθ3 (Chromtrioxid) und 300 g/1 H2SO4 (Schwefelsäure) in Wasser verwendet.In a departure from Example 15, a solution of 300 g / 1 CrO 3 (chromium trioxide) and 300 g / 1 H2SO4 (sulfuric acid) in water is used to selectively remove the palladium seeds.
Beispiel 32:Example 32:
Abweichend vom Beispiel 16 wird zur selektiven Entfernung der Palladiumkeime eine Lösung aus 300 g/1 Crθ3 (Chromtrioxid) und 300 g/1 H2SO4 (Schwefelsäure) in Wasser verwendet.In a departure from Example 16, a solution of 300 g / 1 CrO3 (chromium trioxide) and 300 g / 1 H2SO4 (sulfuric acid) in water is used to selectively remove the palladium seeds.
Beispiel 33:Example 33:
Abweichend vom Beispiel 17 wird zur selektiven Entfernung der Palladiumkeime eine Lösung aus 300 g/1 Crθ3 (Chromtrioxid) und 300 g/1 H2SO4 (Schwefelsäure) in Wasser verwendet.In a departure from Example 17, a solution of 300 g / 1 CrO3 (chromium trioxide) and 300 g / 1 H2SO4 (sulfuric acid) in water is used to selectively remove the palladium seeds.
Beispiel 34:Example 34:
Abweichend vom Beispiel 18 wird zur selektiven Entfernung der Palladiumkeime eine Lösung aus 300 g/1 Crθ3 (Chromtrioxid) und 300 g/1 H2SO4 (Schwefelsäure) in Wasser verwendet.In a departure from Example 18, a solution of 300 g / 1 CrO 3 (chromium trioxide) and 300 g / 1 H2SO4 (sulfuric acid) in water is used to selectively remove the palladium seeds.
Beispiel 35:Example 35:
Abweichend vom Beispiel 19 wird zur selektiven Entfernung der Palladiumkeime eine Lösung aus 300 g/1 Crθ3 (Chromtrioxid) und 300 g/1 H2SO4 (Schwefelsäure) in Wasser verwendet.In a departure from Example 19, a solution of 300 g / 1 CrO3 (chromium trioxide) and 300 g / 1 H2SO4 (sulfuric acid) in water is used to selectively remove the palladium seeds.
Beispiel 36:Example 36:
Abweichend vom Beispiel 20 wird zur selektiven Entfernung der Palladiumkeime eine Lösung aus 300 g/1 Crθ3 (Chromtrioxid) und 300 g/1 H2SO (Schwefelsäure) in Wasser verwendet.
Beispiel 37 :In a departure from Example 20, a solution of 300 g / 1 CrO 3 (chromium trioxide) and 300 g / 1 H2SO (sulfuric acid) in water is used to selectively remove the palladium seeds. Example 37:
Abweichend vom Beispiel 13 wird zur selektiven Entfernung der Palladiumkeime eine Lösung aus 150 g/1 CCI3-COOH (Trichlor- essigsäure) und 150 g/1 H2SO4 (Schwefelsäure) in Wasser ver- wendet .In a departure from example 13, a solution of 150 g / l CCI3-COOH (trichloroacetic acid) and 150 g / l H2SO4 (sulfuric acid) in water is used to selectively remove the palladium seeds.
Beispiel 38:Example 38:
Abweichend vom Beispiel 14 wird zur selektiven Entfernung der Palladiumkeime eine Lösung aus 150 g/1 CCI3-COOH (Trichlor- essigsaure) und 150 g/1 H2SO4 (Schwefelsäure) in Wasser verwendet .In a departure from example 14, a solution of 150 g / l CCI3-COOH (trichloroacetic acid) and 150 g / l H2SO4 (sulfuric acid) in water is used to selectively remove the palladium seeds.
Beispiel 39:Example 39:
Abweichend vom Beispiel 15 wird zur selektiven Entfernung der Palladiumkeime eine Lösung aus 150 g/1 CCI3-COOH (Trichlor- essigsäure) und 150 g/1 H2SO4 (Schwefelsäure) in Wasser verwendet . Beispiel 40: Abweichend vom Beispiel 16 wird zur selektiven Entfernung der Palladiumkeime eine Lösung aus 150 g/1 CCI3-COOH (Trichlor- essigsäure) und 150 g/1 H2SO4 (Schwefelsäure) in Wasser verwendet .In a departure from Example 15, a solution of 150 g / l CCI3-COOH (trichloroacetic acid) and 150 g / l H2SO4 (sulfuric acid) in water is used to selectively remove the palladium seeds. Example 40: In contrast to Example 16, a solution of 150 g / l CCI3-COOH (trichloroacetic acid) and 150 g / l H2SO4 (sulfuric acid) in water is used to selectively remove the palladium seeds.
Beispiel 41: Abweichend vom Beispiel 17 wird zur selektiven Entfernung der Palladiumkeime eine Lösung aus 150 g/1 CCI3-COOH (Trichlor- essigsäure) und 150 g/1 H2SO4 (Schwefelsäure) in Wasser verwendet . Beispiel 42:Example 41: In contrast to Example 17, a solution of 150 g / l CCI3-COOH (trichloroacetic acid) and 150 g / l H2SO4 (sulfuric acid) in water is used to selectively remove the palladium seeds. Example 42:
Abweichend vom Beispiel 18 wird zur selektiven Entfernung der Palladiumkeime eine Lösung aus 150 g/1 CCI3-COOH (Trichlor- essigsäure) und 150 g/1 H2SO (Schwefelsäure) in Wasser verwendet.
Beispiel 43:In a departure from Example 18, a solution of 150 g / l CCI3-COOH (trichloroacetic acid) and 150 g / l H2SO (sulfuric acid) in water is used to selectively remove the palladium seeds. Example 43:
Abweichend vom Beispiel 19 wird zur selektiven Entfernung der Palladiumkeime eine Lösung aus 150 g/1 CCI3-COOH (Trichlor- essigsäure) und 150 g/1 H2SO4 (Schwefelsäure) in Wasser ver- wendet.In a departure from Example 19, a solution of 150 g / l CCI3-COOH (trichloroacetic acid) and 150 g / l H2SO4 (sulfuric acid) in water is used to selectively remove the palladium seeds.
Beispiel 44:Example 44:
Abweichend vom Beispiel 20 wird zur selektiven Entfernung der Palladiumkeime eine Lösung aus 150 g/1 CCI3-COOH (Trichlor- essigsaure) und 150 g/1 H2SO4 (Schwefelsäure) in Wasser verwendet .In a departure from Example 20, a solution of 150 g / l CCI3-COOH (trichloroacetic acid) and 150 g / l H2SO4 (sulfuric acid) in water is used to selectively remove the palladium seeds.
Bei den vorstehenden Beispielen 1 bis 44 lag die Behandlungsdauer für die Entfernung der Bekeimung im Bereich von 5 Minu- ten. Die Temperatur der verwendeten Lösungsmittel lag im Bereich von 50°C. Die Konzentration der verwendeten Lösungsmittel wurde so eingestellt, dass eine sichere Entfernung der Bekeimung BK in den nicht zu metallisierenden Bereichen B2 gewährleistet war.
In Examples 1 to 44 above, the treatment time for removing the germination was in the range of 5 minutes. The temperature of the solvents used was in the range of 50 ° C. The concentration of the solvents used was set in such a way that a reliable removal of the germination BK in the areas B2 that were not to be metallized was ensured.
Claims
1. Verfahren zur Herstellung von dreidimensionalen selektiv metallisierten Teilen (T; Tl) aus einem elektrisch isolieren- den Material mit folgenden Schritten:1. A method for producing three-dimensional selectively metallized parts (T; Tl) from an electrically insulating material with the following steps:
a) Herstellung der Teile (T; Tl) durch Zweikomponenten- Spritzgießen, wobei die zu metallisierenden Bereiche (Bl) aus einem ersten Kunststoff bestehen und wobei die nicht zu metallisierenden Bereiche (B2) aus einem zweiten Kunststoff bestehen;a) Production of the parts (T; Tl) by two-component injection molding, the areas (B1) to be metallized being made of a first plastic and the areas (B2) which are not to be metallized being made of a second plastic;
b) ganzflächige Bekeimung (BK) der Teile (T; Tl) ;b) full-surface germination (BK) of the parts (T; Tl);
c) Selektive Entfernung der Bekeimung (BK) in den nicht zu metallisierenden Bereichen (B2) mit Hilfe eines Lösungsmittels, in welchem der erste Kunststoff zumindest weitgehend unlöslich ist und in welchem der zweite Kunststoff zumindest weitgehend löslich ist;c) selective removal of the germination (BK) in the areas (B2) not to be metallized with the aid of a solvent in which the first plastic is at least largely insoluble and in which the second plastic is at least largely soluble;
d) Stromlose Metallabscheidung in den zu metallisierenden Bereichen (Bl) .d) Electroless metal deposition in the areas to be metallized (Bl).
■■
2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, dass die im Schritt d) erzeugte Metallisierung (M) durch galvanische Metallabscheidung verstärkt wird.2. The method according to claim 1, characterized in that the metallization (M) generated in step d) is reinforced by galvanic metal deposition.
3. Verfahren nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass die Teile in Schritt b) mit Palladium bekeimt werden.3. The method according to claim 1 or 2, characterized in that the parts in step b) are germinated with palladium.
4. Verfahren nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, dass ein in Lauge zumindest weitgehend unlöslicher erster Kunststoff verwendet wird, dass ein in Lauge zumindest weitgehend löslicher zweiter Kunst- stoff verwendet wird und dass zur selektiven Entfernung der Bekeimung (BK) Lauge als Lösungsmittel verwendet wird.4. The method according to any one of claims 1 to 3, characterized in that a first plastic which is at least largely insoluble in lye is used, that a second plastic which is at least largely soluble in lye. substance is used and that for the selective removal of germination (BK) lye is used as a solvent.
5. Verfahren nach Anspruch 4, d a d u r c h g e k e n n z e i c h n e t , dass als erster Kunststoff PA verwendet wird .5. The method of claim 4, d a d u r c h g e k e n n z e i c h n e t that PA is used as the first plastic.
6. Verfahren nach Anspruch 4, dadurch gekennzeichnet, dass als erster Kunststoff PS verwendet wird.6. The method according to claim 4, characterized in that PS is used as the first plastic.
7. Verfahren nach einem der Ansprüche 4 bis 6, dadurch gekennzeichnet, dass als zweiter Kunststoff LCP verwendet wird.7. The method according to any one of claims 4 to 6, characterized in that LCP is used as the second plastic.
8. Verfahren nach einem der Ansprüche 4 bis 6, dadurch gekennzeichnet, dass als zweiter Kunststoff PEI verwendet wird.8. The method according to any one of claims 4 to 6, characterized in that PEI is used as the second plastic.
9. Verfahren nach einem der Ansprüche 4 bis 6, dadurch gekennzeichnet, dass als zweiter Kunststoff PET verwendet wird.9. The method according to any one of claims 4 to 6, characterized in that PET is used as the second plastic.
10. Verfahren nach einem der Ansprüche 4 bis 6, dadurch gekennzeichnet, dass als zweiter Kunststoff PBT verwendet wird.10. The method according to any one of claims 4 to 6, characterized in that PBT is used as the second plastic.
11. Verfahren nach einem der Ansprüche 4 bis 10, dadurch gekennzeichnet, dass zur selektiven Entfer- nung der Bekeimung (BK) ein Lösungsmittel auf der Basis von KOH verwendet wird.11. The method according to any one of claims 4 to 10, characterized in that a solvent based on KOH is used for the selective removal of the germination (BK).
12. Verfahren nach einem der Ansprüche 4 bis 10, dadurch gekennzeichnet, dass zur selektiven Entfer- nung der Bekeimung (BK) ein Lösungsmittel auf der Basis von NaOH verwendet wird. 12. The method according to any one of claims 4 to 10, characterized in that a solvent based on NaOH is used for the selective removal of the germination (BK).
13. Verfahren nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, dass ein in Säure zumindest weitgehend unlöslicher erster Kunststoff verwendet wird, dass ein in S ure zumindest weitgehend löslicher zweiter Kunst- stoff verwendet wird und dass zur selektiven Entfernung der Bekeimung (BK) Säure als Lösungsmittel verwendet wird.13. The method according to any one of claims 1 to 3, characterized in that a first plastic which is at least largely insoluble in acid is used, that a second plastic which is at least largely soluble in acid is used and that for the selective removal of the germination (BK) Acid is used as a solvent.
14. Verfahren nach Anspruch 13, dadurch gekennzeichnet, dass als erster Kunststoff LCP verwendet wird.14. The method according to claim 13, characterized in that LCP is used as the first plastic.
15. Verfahren nach Anspruch 13, dadurch gekennzeichnet, dass als erster Kunststoff PEI verwendet wird.15. The method according to claim 13, characterized in that PEI is used as the first plastic.
16. Verfahren nach Anspruch 13, dadurch gekennzeichnet, dass als erster Kunststoff PET verwendet wird.16. The method according to claim 13, characterized in that PET is used as the first plastic.
17. Verfahren nach Anspruch 13, dadurch gekennzeichnet, dass als erster Kunststoff PBT verwendet wird.17. The method according to claim 13, characterized in that PBT is used as the first plastic.
18. Verfahren nach einem der Ansprüche 13 bis 17, dadurch gekennzeichnet, dass als zweiter Kunststoff PA verwendet wird.18. The method according to any one of claims 13 to 17, characterized in that PA is used as the second plastic.
19. Verfahren nach einem der Ansprüche 13 bis 17, dadurch gekennzeichnet, dass als zweiter Kunststoff PS verwendet wird.19. The method according to any one of claims 13 to 17, characterized in that PS is used as the second plastic.
20. Verfahren nach einem der Ansprüche 13 bis 19, dadurch gekennzeichnet, dass zur selektiven Entfernung der Bekeimung (BK) ein Lösungsmittel auf der Basis von HC1 verwendet wird.20. The method according to any one of claims 13 to 19, characterized in that a solvent based on HC1 is used for the selective removal of the germination (BK).
21. Verfahren nach einem der Ansprüche 13 bis 19, dadurch gekennzeichnet, dass zur selektiven Entfernung der Bekeimung (BK) ein Lösungsmittel auf der Basis von H2SO4 verwendet wird.21. The method according to any one of claims 13 to 19, characterized in that a solvent based on H 2 SO 4 is used for the selective removal of the germination (BK).
22. Verfahren nach einem der Ansprüche 13 bis 19, dadurch gekennzeichnet, dass zur selektiven Entfernung der Bekeimung (BK) eine Mischung aus Cr03 und H2S0 als Lösungsmittel verwendet wird.22. The method according to any one of claims 13 to 19, characterized in that a mixture of Cr0 3 and H 2 S0 is used as a solvent for the selective removal of the germination (BK).
23. Verfahren nach einem der Ansprüche 13 bis 19, dadurch gekennzeichnet, dass zur selektiven Entfernung der Bekeimung (BK) eine Mischung aus CCI3 - COOH und H2S04 als Lösungsmittel verwendet wird.23. The method according to any one of claims 13 to 19, characterized in that a mixture of CCI3 - COOH and H 2 S0 4 is used as a solvent for the selective removal of the germination (BK).
24. Dreidimensionales selektiv metallisiertes Teil (T; Tl) aus einem elektrisch isolierenden Material, bestehend aus24. Three-dimensional selectively metallized part (T; Tl) made of an electrically insulating material consisting of
- einem ersten Kunststoff in den metallisierten Bereichen (Bl), - einem zweiten Kunststoff in den nicht metallisierten Bereichen (B2, wobei- A first plastic in the metallized areas (B1), - A second plastic in the non-metallized areas (B2, where
- der erste Kunststoff in einem vorgegebenen Lösungsmittel zumindest weitgehend löslich ist. - The first plastic is at least largely soluble in a given solvent.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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DE10026640 | 2000-05-29 | ||
DE10026640 | 2000-05-29 | ||
PCT/DE2001/001824 WO2001092596A2 (en) | 2000-05-29 | 2001-05-10 | Method for producing three-dimensional, selectively metallized parts and a three-dimensional, selectively metallized part |
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EP1287179A2 true EP1287179A2 (en) | 2003-03-05 |
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EP01943070A Withdrawn EP1287179A2 (en) | 2000-05-29 | 2001-05-10 | Method for producing three-dimensional, selectively metallized parts and a three-dimensional, selectively metallized part |
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US (1) | US6673227B2 (en) |
EP (1) | EP1287179A2 (en) |
JP (1) | JP2003535219A (en) |
KR (1) | KR20030007745A (en) |
CN (1) | CN1432072A (en) |
TW (1) | TW514674B (en) |
WO (1) | WO2001092596A2 (en) |
Families Citing this family (23)
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EP1193040A1 (en) * | 2000-09-29 | 2002-04-03 | W.C. Heraeus GmbH & Co. KG | Injection moulded plastic element and use |
FR2834300B1 (en) * | 2002-01-03 | 2004-02-27 | Cit Alcatel | PROCESS FOR LOCAL GALVANIZATION OF A PART |
WO2004079795A2 (en) | 2003-03-04 | 2004-09-16 | Rohm And Haas Electronic Materials, L.L.C. | Coaxial waveguide microstructures and methods of formation thereof |
EP1524331A1 (en) * | 2003-10-17 | 2005-04-20 | Nederlandse Organisatie voor toegepast-natuurwetenschappelijk onderzoek TNO | Method for metallizing a component comprising parts of different non-metallic materials |
DE102004017440A1 (en) * | 2004-04-08 | 2005-11-03 | Enthone Inc., West Haven | Process for the treatment of laser-structured plastic surfaces |
KR20090080049A (en) * | 2006-09-26 | 2009-07-23 | 디에스엠 아이피 어셋츠 비.브이. | Method for metallizing a component |
EP1925428A1 (en) * | 2006-11-23 | 2008-05-28 | Nederlandse Organisatie voor Toegepast-Natuuurwetenschappelijk Onderzoek TNO | Method and apparatus for making partially coated products |
EP1973190A1 (en) | 2007-03-20 | 2008-09-24 | Rohm and Haas Electronic Materials LLC | Integrated electronic components and methods of formation thereof |
US20110123783A1 (en) | 2009-11-23 | 2011-05-26 | David Sherrer | Multilayer build processses and devices thereof |
EP2457719A1 (en) * | 2010-11-24 | 2012-05-30 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | Interconnect structure and method for producing same |
US8866300B1 (en) | 2011-06-05 | 2014-10-21 | Nuvotronics, Llc | Devices and methods for solder flow control in three-dimensional microstructures |
WO2013010108A1 (en) * | 2011-07-13 | 2013-01-17 | Nuvotronics, Llc | Methods of fabricating electronic and mechanical structures |
US9306254B1 (en) | 2013-03-15 | 2016-04-05 | Nuvotronics, Inc. | Substrate-free mechanical interconnection of electronic sub-systems using a spring configuration |
US9306255B1 (en) | 2013-03-15 | 2016-04-05 | Nuvotronics, Inc. | Microstructure including microstructural waveguide elements and/or IC chips that are mechanically interconnected to each other |
US10310009B2 (en) | 2014-01-17 | 2019-06-04 | Nuvotronics, Inc | Wafer scale test interface unit and contactors |
US10847469B2 (en) | 2016-04-26 | 2020-11-24 | Cubic Corporation | CTE compensation for wafer-level and chip-scale packages and assemblies |
WO2016094129A1 (en) | 2014-12-03 | 2016-06-16 | Nuvotronics, Inc. | Systems and methods for manufacturing stacked circuits and transmission lines |
US10737530B2 (en) * | 2015-05-14 | 2020-08-11 | Lacks Enterprises, Inc. | Two-shot molding for selectively metalizing parts |
US9660614B2 (en) | 2015-07-31 | 2017-05-23 | Nuvotronics, Inc. | Stacked, switched filter banks |
US10525919B2 (en) | 2016-05-27 | 2020-01-07 | Srg Global Inc. | Vehicle exterior components having discontinuous plated features |
US9914404B2 (en) | 2016-08-08 | 2018-03-13 | Srg Global Inc. | Vehicle components having deep mesh plated features |
US10319654B1 (en) | 2017-12-01 | 2019-06-11 | Cubic Corporation | Integrated chip scale packages |
US11875211B1 (en) * | 2022-06-24 | 2024-01-16 | United States Of America As Represented By The Secretary Of The Navy | Smart stickers: sensors for environmental conditions |
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GB1254308A (en) * | 1968-12-19 | 1971-11-17 | Bakelite Xylonite Ltd | Selective plating of plastics mouldings |
US5407622A (en) * | 1985-02-22 | 1995-04-18 | Smith Corona Corporation | Process for making metallized plastic articles |
US4600480A (en) * | 1985-05-09 | 1986-07-15 | Crown City Plating | Method for selectively plating plastics |
JPH03197687A (en) * | 1989-12-26 | 1991-08-29 | Mitsubishi Gas Chem Co Inc | Pretreatment of molded resin product before metal plating |
JP3159841B2 (en) * | 1993-08-26 | 2001-04-23 | ポリプラスチックス株式会社 | Circuit forming method by laser and conductive circuit forming part |
US6331239B1 (en) * | 1997-04-07 | 2001-12-18 | Okuno Chemical Industries Co., Ltd. | Method of electroplating non-conductive plastic molded products |
DE19722925C1 (en) * | 1997-05-27 | 1998-09-10 | Mannesmann Ag | Electrical connecting element for valve unit electromagnets |
EP1193040A1 (en) * | 2000-09-29 | 2002-04-03 | W.C. Heraeus GmbH & Co. KG | Injection moulded plastic element and use |
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2001
- 2001-04-16 US US09/835,335 patent/US6673227B2/en not_active Expired - Fee Related
- 2001-05-10 EP EP01943070A patent/EP1287179A2/en not_active Withdrawn
- 2001-05-10 CN CN01810398A patent/CN1432072A/en active Pending
- 2001-05-10 WO PCT/DE2001/001824 patent/WO2001092596A2/en not_active Application Discontinuation
- 2001-05-10 JP JP2002500785A patent/JP2003535219A/en not_active Withdrawn
- 2001-05-10 KR KR1020027016168A patent/KR20030007745A/en not_active Application Discontinuation
- 2001-05-11 TW TW090111256A patent/TW514674B/en not_active IP Right Cessation
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US6673227B2 (en) | 2004-01-06 |
US20010045361A1 (en) | 2001-11-29 |
KR20030007745A (en) | 2003-01-23 |
TW514674B (en) | 2002-12-21 |
CN1432072A (en) | 2003-07-23 |
WO2001092596A2 (en) | 2001-12-06 |
JP2003535219A (en) | 2003-11-25 |
WO2001092596A3 (en) | 2002-10-03 |
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