EP1261990A1 - Substrat metallique souple pour cellules solaires cis et son procede de production - Google Patents
Substrat metallique souple pour cellules solaires cis et son procede de productionInfo
- Publication number
- EP1261990A1 EP1261990A1 EP01911618A EP01911618A EP1261990A1 EP 1261990 A1 EP1261990 A1 EP 1261990A1 EP 01911618 A EP01911618 A EP 01911618A EP 01911618 A EP01911618 A EP 01911618A EP 1261990 A1 EP1261990 A1 EP 1261990A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- nickel
- copper foil
- layer
- molybdenum
- tungsten
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 229910052751 metal Inorganic materials 0.000 title description 2
- 239000002184 metal Substances 0.000 title description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 77
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 64
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 25
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 22
- BSIDXUHWUKTRQL-UHFFFAOYSA-N nickel palladium Chemical compound [Ni].[Pd] BSIDXUHWUKTRQL-UHFFFAOYSA-N 0.000 claims abstract description 17
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 16
- 239000011733 molybdenum Substances 0.000 claims abstract description 16
- MOWMLACGTDMJRV-UHFFFAOYSA-N nickel tungsten Chemical compound [Ni].[W] MOWMLACGTDMJRV-UHFFFAOYSA-N 0.000 claims abstract description 15
- DDTIGTPWGISMKL-UHFFFAOYSA-N molybdenum nickel Chemical compound [Ni].[Mo] DDTIGTPWGISMKL-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910001252 Pd alloy Inorganic materials 0.000 claims abstract description 12
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 12
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 11
- 239000010937 tungsten Substances 0.000 claims abstract description 11
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 claims abstract description 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 5
- 239000011651 chromium Substances 0.000 claims abstract description 5
- 239000011889 copper foil Substances 0.000 claims description 50
- 230000008021 deposition Effects 0.000 claims description 15
- 239000012876 carrier material Substances 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 12
- 229910045601 alloy Inorganic materials 0.000 claims description 10
- 239000000956 alloy Substances 0.000 claims description 10
- 239000003792 electrolyte Substances 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- 229910052742 iron Inorganic materials 0.000 claims 1
- IPLJNQFXJUCRNH-UHFFFAOYSA-L nickel(2+);dibromide Chemical class [Ni+2].[Br-].[Br-] IPLJNQFXJUCRNH-UHFFFAOYSA-L 0.000 claims 1
- 150000003388 sodium compounds Chemical class 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 abstract description 27
- 239000010949 copper Substances 0.000 abstract description 27
- 239000000463 material Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 89
- 238000000151 deposition Methods 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 9
- 239000011888 foil Substances 0.000 description 7
- 230000008901 benefit Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 230000031700 light absorption Effects 0.000 description 5
- 238000009713 electroplating Methods 0.000 description 4
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 3
- 229910001431 copper ion Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 239000011593 sulfur Substances 0.000 description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910001374 Invar Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- BWFPGXWASODCHM-UHFFFAOYSA-N copper monosulfide Chemical group [Cu]=S BWFPGXWASODCHM-UHFFFAOYSA-N 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 238000009533 lab test Methods 0.000 description 1
- 150000002815 nickel Chemical class 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- IRPLSAGFWHCJIQ-UHFFFAOYSA-N selanylidenecopper Chemical compound [Se]=[Cu] IRPLSAGFWHCJIQ-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
- H01L31/03928—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate including AIBIIICVI compound, e.g. CIS, CIGS deposited on metal or polymer foils
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/04—Wires; Strips; Foils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the invention relates to a flexible metallic substrate for CIS solar cells and methods for the production thereof.
- Thin-film solar modules represent the latest state of development.
- layers of high-purity silicon, cadmium telluride or copper indium selenide / sulfur (abbreviated to CIS) of less than 1 ⁇ m thickness are usually vapor-deposited onto glass.
- the CIS technology is particularly interesting because of its environmental compatibility and the lack of degradation (declining effectiveness due to aging).
- the CIS layer is usually deposited on glass, which was usually only sputter-coated with molybdenum.
- rolled copper tape is problematic in that it absorbs a number of contaminants through the smelting process. Although it is subjected to electrolytic refining, the purities of 99.99% which can be achieved must be regarded as "heavily contaminated" in the sense of solar semiconductor technology. Although oxygen-free qualities are available, they still contain an undetermined number of others, in the sense of Semiconductor technology with no minor additions.
- the copper strip must be annealed during the rolling process after each rolling pass. Licher further contamination of the copper surface. Thinly rolled copper strip is therefore once relatively expensive and, secondly, contains impurities which prove to be disruptive when a CIS layer is applied.
- a fundamental disadvantage of copper is also that the thermal expansion coefficient of the crystalline CIS layer is so different from that of the copper strip that it is easy to crack in the CIS during the heat treatment that is required after the application of the CIS layer. Layer comes, with which every photovoltaic function is destroyed.
- molybdenum foil has about four times the price of copper tape. Its use, probably because of the impurities it contains, has not gone beyond laboratory tests.
- Plastic films for CIS deposition have also become known.
- the selection of sufficiently high-temperature-resistant materials causes considerable effort.
- such foils naturally have to be made electrically conductive by ITO / TCO layers, which is usually done by vacuum deposition, which increases the costs considerably.
- Chromium-nickel steel foil which has also already been proposed, is also unsuitable, since it tends to absorb hydrogen, which forms bubbles on the surface of the foil, which lead to “pin holes” when the CIS layer is deposited , which makes it easier to apply later transparent cover layer leads to short circuits, which make the solar cell unusable.
- the invention has for its object to provide a metallic substrate for a flexible, ribbon-shaped solar cell and method for its production, which allow the galvanic application of the CIS layer and thus do not require vacuum technology with which the diffusion of ions of the substrate into the CIS layer is prevented, however.
- the substrate should be insensitive to mechanical (bending of the cell) and thermal influences on the solar cell.
- a ribbon-shaped copper foil is then used as the carrier material.
- the substrate is created by applying a layer structure to the carrier material from a base layer made of chromium, nickel or nickel-iron and a contact layer made from molybdenum, tungsten or palladium or a nickel-molybdenum, nickel-tungsten or nickel-palladium alloy or only from a contact layer made of a nickel-molybdenum, nickel-tungsten or nickel-palladium alloy.
- the layer sequence can be generated in the specified order by galvanic deposition.
- the layer of molybdenum, tungsten or palladium or a nickel-molybdenum, nickel-tungsten or nickel-palladium alloy takes over the "mediation" between the very different thermal expansion coefficients of copper / nickel and CIS, while nickel or nickel Iron significantly increases the strength of the layer composite and represents a diffusion barrier against copper ions has a very low coefficient of thermal expansion similar to that of the CIS layer, on the other hand it has a high modulus of elasticity, which is able to absorb the stresses between the layers below and above it with different expansion.
- a layer of tungsten behaves similarly, ie it shows high elasticity at low thermal expansion.
- the layer structure thus represents a suitable substrate that can only be produced using the strip galvano-chemical process and that despite the high costs of molybdenum, tungsten and palladium or the nickel-molybdenum, nickel-tungsten or nickel -Palladium alloy is inexpensive overall because of the low layer thicknesses.
- Copper foil has the advantage that it is flexible and cheaper than other metal foils.
- the conductivity, which is also good, is not of great importance, since photovoltaically generated current has a low current density.
- Copper alloys which have a lower conductivity but have other advantages can therefore also be used.
- the heat resistance of pure copper is very low, so that without further measures, mechanical stresses during the subsequent annealing process can damage the thin CIS layer.
- copper ions are extremely mobile, so that they would migrate into the CIS layer in an uncontrolled amount during the tempering process, but also at the temperature of use of the solar cells.
- the thermal expansion coefficient of copper is so different from that of the crystalline CIS layer that under the influence of temperature, crack formation in the thin, overlying CIS absorber layer can be expected, which in turn nullifies any photovoltaic function.
- a chromium, nickel or nickel-iron base layer is first applied, which serves as a diffusion barrier, as an adjustment with regard to the coefficient of expansion and as an adhesive layer for the subsequent layers.
- the nickel-iron layer is known as the so-called KOVAR or INVAR alloy. Chromium, nickel or nickel-iron can be applied by electroplating.
- the subsequent contact layer consists of molybdenum, palladium or tungsten or a nickel-molybdenum, nickel-tungsten or nickel-palladium alloy, which can also be applied by electroplating.
- Another variant is the sole deposition of a nickel-palladium, nickel-molybdenum or nickel-tungsten alloy on the copper foil, which also serves as a diffusion barrier and as a mediation layer for the CIS layer.
- the electroplating of a molybdenum layer is little known so far, but it is possible as an alloy deposit together with nickel, just like nickel-palladium or nickel-tungsten.
- Layers of palladium, nickel-palladium, or tungsten or tungsten-palladium are in themselves a diffusion barrier against copper, but the expensive noble metals can be applied galvanically in a lower layer thickness and with better adhesion and without contamination of the baths by copper, if at least a thin layer of nickel is previously deposited on the copper foil.
- Molybdenum is not able to act as a diffusion barrier for copper and therefore requires a nickel layer with a certain minimum thickness as a base.
- the direct contact of a pure nickel layer with the CIS layer must be avoided because this would form CIS-nickel complexes, ie pure CIS would no longer be available for the crystalline structure.
- the copper foil should have a surface roughness that is as low as possible, but in order to maximize the later light absorption, the surface area can be increased by bulges being introduced during the manufacturing process. As a result, the light absorption and thus the total output is increased in the case of diffuse radiation impinging on the solar cell.
- the CIS layer can then be galvanically applied to the carrier material with the substrate layers in a known manner, so that no vacuum systems are required.
- the CIS layer is then activated in a heat treatment process. Copper foil produced by electrolytic deposition is advantageously used as the carrier material.
- Electrolytically deposited copper foil which has traditionally been used exclusively for the manufacture of printed circuit boards, has a number of advantages which have hitherto not been used in other applications or which are not in demand there and which prove to be relevant here.
- Electrolytically deposited copper foil is namely produced with a certain roughness for the production of printed circuit boards.
- Rolled copper strip also has a certain roughness. Such roughness is advantageous for further processing, namely for bonding, but would be disadvantageous for solar cells.
- Electrolytically deposited copper foil on the other hand, can also be produced with very little roughness, which is a great advantage for solar cells.
- the copper foil is produced as an endless strip by deposition from an electrolytic bath. Components can be added to the bath, the deposits of which in the copper foil increase the tensile strength and / or temperature resistance and / or reduce the coefficient of expansion of the copper foil, for example nickel. Additionally or alternatively, the copper foil can be provided with further metallic layers after the first deposition process by further galvanic treatment.
- Suitable bath additives for simultaneous deposition are e.g. B. those that a deposition of nickel, zinc, tin and. effect.
- Nickel in particular causes the tensile strength of the copper foil to increase, which would otherwise be lost in the subsequent heat treatment processes. Copper foil with a certain nickel content then has the effect that the following base layer can be made much thinner and adheres better.
- a subsequent layer build-up by galvanic deposition can be, for example, copper foil / nickel or copper foil / (nickel iron).
- electrolytically deposited copper foil for the construction of flexible CIS solar cells has various advantages.
- the foil can also be produced in a high degree of purity, which, however, did not play a role for the previous application in printed circuit board manufacture and was not used there.
- the price for electrodeposited, thin copper foils is no higher than for comparable rolled copper strips.
- the copper foil In contrast to copper foil, which is used for the printed circuit board industry, the copper foil is manufactured with a low surface roughness. To maximize the later light absorption, the surface area can be increased by bulging during the deposition without any additional manufacturing effort. The dimension of these bulges is macroscopic. Such, e.g. B. hemispherical bulges in the order of about 2 mm can be realized by appropriate design of the separation drum. As a result, the light absorption and thus the cell Efficiency increased. In addition, the bulges reduce the longitudinal expansion of the copper under the influence of temperature and thus represent a desirable adaptation to the behavior of the CIS layer (avoidance of cracking).
- the CIS layer can then also be galvanically applied to the carrier material in a known manner, so that overall there is a galvanic process and no vacuum systems are required within a band process of solar cell production.
- Fig. 3 shows a third example of a layer structure with a nickel-palladium alloy
- Fig. 4 schematically shows a system for depositing a copper foil from an electrolytic bath
- Fig. 5 shows the copper foil thus deposited in cross section.
- the flexible substrate consists of an electrodeposited copper foil 1 to which a nickel layer 3 and then a nickel-molybdenum layer 4 have been applied galvanochemically. Since molybdenum is not a particularly good diffusion barrier for copper ions, a relatively thick nickel layer, approximately 2 ⁇ m thick, must be applied in this case. Nickel then takes on the function of a diffusion barrier and at the same time increases the heat resistance of the copper foil 1. Finally, a CIS layer 5 can also be applied galvanically to the nickel-molybdenum layer 4 in a conventional manner.
- an electrodeposited copper foil 1 is again used, onto which a nickel layer 2 was also electrodeposited, but here only with a thickness of approximately 0.2 ⁇ m.
- a layer 6 made of nickel-palladium or nickel-tungsten follows. Palladium and tungsten represent better diffusion barriers than molybdenum, so that the nickel layer 2 is required here alone to promote adhesion.
- the CIS layer follows again in a known manner.
- a third variant is shown in FIG.
- a nickel (20) -alladium (80) alloy layer 7 of medium thickness was applied to a copper foil 1 alone, as is available as a standard product in strip electroplating.
- the CIS layer is then applied to this.
- the 4 consists of a drum 8, which is rotatably mounted in a basin 9, in which an electrolyte 10 is located.
- the drum 8 forms the cathode, the basin 9 the anode.
- the basin 9 is provided with an inlet 11 for the electrolyte 10, while an outlet 12 at which the basin 9 enclosing container 15 is provided.
- copper is deposited on the drum 8, which can be lifted off the drum 8 as a copper foil 13 with a width of approximately 35 mm and a thickness of approximately 0.2 mm and wound onto a reel 14 ,
- a suitable nickel salt can be mixed into the electrolyte in such a concentration that the copper foil 13 is formed with an alloy composition of the desired type.
- the otherwise greatly reduced tensile strength of the copper foil 13 is increased by the nickel content in the subsequent heat treatment.
- the copper foil 13 has hemispherical bulges 19 which increase the light absorption in a finished solar module.
- the photovoltaically effective CIS layer 20 is later applied to the convex side 16 of these bulges, which is kept as smooth as possible.
- the other, concave side 21, however, can have a certain roughness.
- the convex side 16 has only a slight roughness due to the polished surface of the drum 8.
- a special edge design e.g. B. for subdivision of the carrier material into individual solar cells, can be provided, which can be introduced in the manufacturing process.
- a bent edge strip 18 is used to support a next solar cell, while on the other edge side, which is contacted with an edge strip 18 of a next solar cell, curved contact points 17 are provided to improve the contact.
- the edge strip serves to limit the actual cell area coated with the CIS layer 20. Except for the contact points 17, it can be coated with an insulating material.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10005680 | 2000-02-07 | ||
DE10005680A DE10005680B4 (de) | 2000-02-07 | 2000-02-07 | Trägermaterial für eine flexible, bandförmige CIS-Solarzelle |
DE10006823A DE10006823C2 (de) | 2000-02-08 | 2000-02-08 | Verfahren zur Herstellung eines flexiblen metallischen Substrats für eine CIS-Solarzelle und CIS-Solarzelle |
DE10006823 | 2000-02-08 | ||
PCT/EP2001/001313 WO2001057932A1 (fr) | 2000-02-07 | 2001-02-07 | Substrat metallique souple pour cellules solaires cis et son procede de production |
Publications (1)
Publication Number | Publication Date |
---|---|
EP1261990A1 true EP1261990A1 (fr) | 2002-12-04 |
Family
ID=26004249
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP01911618A Withdrawn EP1261990A1 (fr) | 2000-02-07 | 2001-02-07 | Substrat metallique souple pour cellules solaires cis et son procede de production |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP1261990A1 (fr) |
AU (1) | AU2001240599A1 (fr) |
WO (1) | WO2001057932A1 (fr) |
Families Citing this family (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1733436A1 (fr) * | 2004-03-30 | 2006-12-20 | Hille & Müller GmbH | Mo substrat pour une pile solaire photovoltaique |
US8101858B2 (en) | 2006-03-14 | 2012-01-24 | Corus Technology B.V. | Chalcopyrite semiconductor based photovoltaic solar cell comprising a metal substrate, coated metal substrate for a photovoltaic solar cell and manufacturing method thereof |
US8017860B2 (en) | 2006-05-15 | 2011-09-13 | Stion Corporation | Method and structure for thin film photovoltaic materials using bulk semiconductor materials |
US9105776B2 (en) | 2006-05-15 | 2015-08-11 | Stion Corporation | Method and structure for thin film photovoltaic materials using semiconductor materials |
WO2008049103A2 (fr) * | 2006-10-19 | 2008-04-24 | Solopower, Inc. | Dépôt électrolytique à rouleaux couplés pour la fabrication d'un film photovoltaïque |
US8071179B2 (en) | 2007-06-29 | 2011-12-06 | Stion Corporation | Methods for infusing one or more materials into nano-voids if nanoporous or nanostructured materials |
US7919400B2 (en) | 2007-07-10 | 2011-04-05 | Stion Corporation | Methods for doping nanostructured materials and nanostructured thin films |
US8287942B1 (en) | 2007-09-28 | 2012-10-16 | Stion Corporation | Method for manufacture of semiconductor bearing thin film material |
US8614396B2 (en) | 2007-09-28 | 2013-12-24 | Stion Corporation | Method and material for purifying iron disilicide for photovoltaic application |
US8058092B2 (en) | 2007-09-28 | 2011-11-15 | Stion Corporation | Method and material for processing iron disilicide for photovoltaic application |
US8927392B2 (en) | 2007-11-02 | 2015-01-06 | Siva Power, Inc. | Methods for forming crystalline thin-film photovoltaic structures |
US7998762B1 (en) | 2007-11-14 | 2011-08-16 | Stion Corporation | Method and system for large scale manufacture of thin film photovoltaic devices using multi-chamber configuration |
DE102009004966A1 (de) | 2008-01-15 | 2009-07-23 | Mol Katalysatortechnik Gmbh | Verfahren zur Herstellung einer Solarzelle sowie Solarzelle |
US8642138B2 (en) | 2008-06-11 | 2014-02-04 | Stion Corporation | Processing method for cleaning sulfur entities of contact regions |
US9087943B2 (en) | 2008-06-25 | 2015-07-21 | Stion Corporation | High efficiency photovoltaic cell and manufacturing method free of metal disulfide barrier material |
US8003432B2 (en) | 2008-06-25 | 2011-08-23 | Stion Corporation | Consumable adhesive layer for thin film photovoltaic material |
US7855089B2 (en) | 2008-09-10 | 2010-12-21 | Stion Corporation | Application specific solar cell and method for manufacture using thin film photovoltaic materials |
US8394662B1 (en) | 2008-09-29 | 2013-03-12 | Stion Corporation | Chloride species surface treatment of thin film photovoltaic cell and manufacturing method |
US8008110B1 (en) | 2008-09-29 | 2011-08-30 | Stion Corporation | Bulk sodium species treatment of thin film photovoltaic cell and manufacturing method |
US8008112B1 (en) | 2008-09-29 | 2011-08-30 | Stion Corporation | Bulk chloride species treatment of thin film photovoltaic cell and manufacturing method |
US8501521B1 (en) | 2008-09-29 | 2013-08-06 | Stion Corporation | Copper species surface treatment of thin film photovoltaic cell and manufacturing method |
US8476104B1 (en) | 2008-09-29 | 2013-07-02 | Stion Corporation | Sodium species surface treatment of thin film photovoltaic cell and manufacturing method |
US8026122B1 (en) | 2008-09-29 | 2011-09-27 | Stion Corporation | Metal species surface treatment of thin film photovoltaic cell and manufacturing method |
US8236597B1 (en) | 2008-09-29 | 2012-08-07 | Stion Corporation | Bulk metal species treatment of thin film photovoltaic cell and manufacturing method |
US8383450B2 (en) | 2008-09-30 | 2013-02-26 | Stion Corporation | Large scale chemical bath system and method for cadmium sulfide processing of thin film photovoltaic materials |
US7863074B2 (en) | 2008-09-30 | 2011-01-04 | Stion Corporation | Patterning electrode materials free from berm structures for thin film photovoltaic cells |
US8425739B1 (en) | 2008-09-30 | 2013-04-23 | Stion Corporation | In chamber sodium doping process and system for large scale cigs based thin film photovoltaic materials |
US7910399B1 (en) | 2008-09-30 | 2011-03-22 | Stion Corporation | Thermal management and method for large scale processing of CIS and/or CIGS based thin films overlying glass substrates |
US7947524B2 (en) | 2008-09-30 | 2011-05-24 | Stion Corporation | Humidity control and method for thin film photovoltaic materials |
US8741689B2 (en) | 2008-10-01 | 2014-06-03 | Stion Corporation | Thermal pre-treatment process for soda lime glass substrate for thin film photovoltaic materials |
US8003430B1 (en) | 2008-10-06 | 2011-08-23 | Stion Corporation | Sulfide species treatment of thin film photovoltaic cell and manufacturing method |
US8435826B1 (en) | 2008-10-06 | 2013-05-07 | Stion Corporation | Bulk sulfide species treatment of thin film photovoltaic cell and manufacturing method |
USD625695S1 (en) | 2008-10-14 | 2010-10-19 | Stion Corporation | Patterned thin film photovoltaic module |
US8168463B2 (en) | 2008-10-17 | 2012-05-01 | Stion Corporation | Zinc oxide film method and structure for CIGS cell |
US8344243B2 (en) | 2008-11-20 | 2013-01-01 | Stion Corporation | Method and structure for thin film photovoltaic cell using similar material junction |
USD628332S1 (en) | 2009-06-12 | 2010-11-30 | Stion Corporation | Pin striped thin film solar module for street lamp |
USD632415S1 (en) | 2009-06-13 | 2011-02-08 | Stion Corporation | Pin striped thin film solar module for cluster lamp |
USD652262S1 (en) | 2009-06-23 | 2012-01-17 | Stion Corporation | Pin striped thin film solar module for cooler |
USD662041S1 (en) | 2009-06-23 | 2012-06-19 | Stion Corporation | Pin striped thin film solar module for laptop personal computer |
US8507786B1 (en) | 2009-06-27 | 2013-08-13 | Stion Corporation | Manufacturing method for patterning CIGS/CIS solar cells |
USD627696S1 (en) | 2009-07-01 | 2010-11-23 | Stion Corporation | Pin striped thin film solar module for recreational vehicle |
US8398772B1 (en) | 2009-08-18 | 2013-03-19 | Stion Corporation | Method and structure for processing thin film PV cells with improved temperature uniformity |
US8809096B1 (en) | 2009-10-22 | 2014-08-19 | Stion Corporation | Bell jar extraction tool method and apparatus for thin film photovoltaic materials |
US8859880B2 (en) | 2010-01-22 | 2014-10-14 | Stion Corporation | Method and structure for tiling industrial thin-film solar devices |
US8263494B2 (en) | 2010-01-25 | 2012-09-11 | Stion Corporation | Method for improved patterning accuracy for thin film photovoltaic panels |
US9096930B2 (en) | 2010-03-29 | 2015-08-04 | Stion Corporation | Apparatus for manufacturing thin film photovoltaic devices |
CN102270683A (zh) * | 2010-06-03 | 2011-12-07 | 上海空间电源研究所 | 柔性薄膜太阳电池集成组件及其制备方法 |
US8461061B2 (en) | 2010-07-23 | 2013-06-11 | Stion Corporation | Quartz boat method and apparatus for thin film thermal treatment |
US8628997B2 (en) | 2010-10-01 | 2014-01-14 | Stion Corporation | Method and device for cadmium-free solar cells |
US8728200B1 (en) | 2011-01-14 | 2014-05-20 | Stion Corporation | Method and system for recycling processing gas for selenization of thin film photovoltaic materials |
US8436445B2 (en) | 2011-08-15 | 2013-05-07 | Stion Corporation | Method of manufacture of sodium doped CIGS/CIGSS absorber layers for high efficiency photovoltaic devices |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1082695A (en) * | 1966-10-13 | 1967-09-06 | Ernest Herbert Lyons | Improvements in the electroplating of precious metals on to articles made of baser metals |
DE3809139A1 (de) * | 1988-03-18 | 1989-09-28 | Lpw Chemie Gmbh | Verwendung einer palladium/nickel-legierungsschicht als zwischenschicht zwischen einem nichtkorrosionsbestaendigen oder wenig korrosionsbestaendigen metallischen grundmaterial und einer nach dem pvd-verfahren aufgebrachten beschichtung |
JP2717911B2 (ja) * | 1992-11-19 | 1998-02-25 | 日鉱グールド・フォイル株式会社 | 印刷回路用銅箔及びその製造方法 |
CA2105464A1 (fr) * | 1993-09-02 | 1995-03-03 | Shaolin Shi | Methodes de depot continu de couches minces semi-conductrices |
DE19634580C2 (de) * | 1996-08-27 | 1998-07-02 | Inst Solar Technologien | Verfahren zur Herstellung einer CIS-Bandsolarzelle und Vorrichtung zur Durchführung des Verfahrens |
-
2001
- 2001-02-07 EP EP01911618A patent/EP1261990A1/fr not_active Withdrawn
- 2001-02-07 WO PCT/EP2001/001313 patent/WO2001057932A1/fr active Application Filing
- 2001-02-07 AU AU2001240599A patent/AU2001240599A1/en not_active Abandoned
Non-Patent Citations (1)
Title |
---|
See references of WO0157932A1 * |
Also Published As
Publication number | Publication date |
---|---|
AU2001240599A1 (en) | 2001-08-14 |
WO2001057932A1 (fr) | 2001-08-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1261990A1 (fr) | Substrat metallique souple pour cellules solaires cis et son procede de production | |
DE69730337T2 (de) | Photovoltaische folie und verfahren zu deren herstellung | |
DE4333407C1 (de) | Solarzelle mit einer Chalkopyritabsorberschicht | |
DE69814751T2 (de) | Herstellung einer dünnen Zinkoxidschicht | |
DE69910751T2 (de) | Herstellungsverfahren einer einen farbstoff enthaltenden solarzelle | |
EP0922303B1 (fr) | Cellule solaire en cis sur bande- procede et dispositif pour sa fabrication | |
DE4433097C2 (de) | Verfahren zum Herstellen einer lichtabsorbierenden Schicht einer Solarzelle | |
DE69513054T2 (de) | Herstellungsverfahren einer elektrode für eine elektrochemische vorrichtung | |
DE10113782A1 (de) | Solarzelle und Verfahren zu ihrer Herstellung | |
WO2009006988A1 (fr) | Structure de contact pour un composant semi-conducteur et son procédé de fabrication | |
DE3312053C2 (de) | Verfahren zum Verhindern von Kurz- oder Nebenschlüssen in einer großflächigen Dünnschicht-Solarzelle | |
DE3113130A1 (de) | Cadmiumsulfidphotoelement und verfahren zu seiner herstellung | |
DE102012216026B4 (de) | Verfahren zur Herstellung einer flexiblen Photovoltaik-Dünnschichtzelle mit einer Eisendiffusionsbarriereschicht und flexible Photovoltaik-Dünnschichtzelle mit einer Eisendiffusionsbarriereschicht | |
DE10006823C2 (de) | Verfahren zur Herstellung eines flexiblen metallischen Substrats für eine CIS-Solarzelle und CIS-Solarzelle | |
DE19917758C2 (de) | Verfahren zur Herstellung einer CuInSe2(CIS)Solarzelle | |
DE2016211C3 (de) | Verfahren zur Herstellung einer Halbleitervorrichtung | |
DE3317309A1 (de) | Duennschicht-solarzellenanordnung | |
DE112016006557B4 (de) | Verfahren zur Herstellung einer CdTe-Dünnschichtsolarzelle | |
DE10005680B4 (de) | Trägermaterial für eine flexible, bandförmige CIS-Solarzelle | |
DE2160284A1 (de) | Elektroplattierverfahren | |
DE102013219342A1 (de) | Verfahren zur Strukturierung von Schichten oxidierbarer Materialien mittels Oxidation sowie Substrat mit strukturierter Beschichtung | |
DE19611996C1 (de) | Solarzelle mit einer Chalkopyritabsorberschicht und Verfahren zu ihrer Herstellung | |
EP0133698A2 (fr) | Cellule photovoltaique et procédé pour sa fabrication | |
DE102004042306B4 (de) | Verfahren zur Herstellung eines Substrates für flexible Dünnschicht-Solarzellen nach der CIS-Technologie | |
DE10004733C2 (de) | Dünnfilm-Halbleiterbauelement mit einer Chalkopyritschicht und Verfahren zu seiner Herstellung sowie Verwendung des Verfahrens zur Herstellung einer Dünnfilm-Solarzelle |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20020906 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR |
|
AX | Request for extension of the european patent |
Free format text: AL;LT;LV;MK;RO;SI |
|
RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: HOFFMANN, THOMAS Inventor name: JACOBS, KLAUS Inventor name: KALBERLAH, KLAUS |
|
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: CIS SOLARTECHNIK GMBH |
|
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: CIS SOLARTECHNIK GMBH & CO. KG |
|
17Q | First examination report despatched |
Effective date: 20091021 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20100302 |