EP1259983A1 - Electrical connection between two surfaces of a substrate and method for producing same - Google Patents

Electrical connection between two surfaces of a substrate and method for producing same

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Publication number
EP1259983A1
EP1259983A1 EP01909909A EP01909909A EP1259983A1 EP 1259983 A1 EP1259983 A1 EP 1259983A1 EP 01909909 A EP01909909 A EP 01909909A EP 01909909 A EP01909909 A EP 01909909A EP 1259983 A1 EP1259983 A1 EP 1259983A1
Authority
EP
European Patent Office
Prior art keywords
substrate
groove
trench
filled
face
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP01909909A
Other languages
German (de)
French (fr)
Inventor
Line Vieux-Rochaz
Robert Cuchet
Olivier Girard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
PHS Mems
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, PHS Mems filed Critical Commissariat a lEnergie Atomique CEA
Publication of EP1259983A1 publication Critical patent/EP1259983A1/en
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the subject of the present invention is an electrical connection between two faces of a substrate and a method of making this connection. It finds an application in the production of electronic components or circuits or even devices requiring electrical connections such as magnetic heads or sensors.
  • Document FR-A-2,637,151 describes a method of making electrical connections through a substrate. This process is illustrated by Figures 1A, 1B, 1C attached.
  • an insulating layer 12 is deposited and the rear face of the substrate is scanned with a defined pitch by a laser beam of appropriate wavelength.
  • the laser radiation is absorbed by the substrate and locally causes abrasion of the latter.
  • the radiation reaches the insulating layer 12 which is transparent to the chosen radiation. It remains intact and therefore constitutes a bottom for the holes drilled in the substrate which, therefore, are blind.
  • Thermal oxidation is then carried out, in particular creating an insulating layer 14 on the wall of the holes and on the rear face of the substrate (FIG.
  • a conductive layer 16 is deposited which coats the walls and the bottom of the holes. Using an etching technique, part of the insulating layer 12 covering the conductive layer on the front face is removed to create an opening 18 (FIG. 1B).
  • Document EP-0 926 726 describes a method for producing an electronic circuit in which a trench is drilled in a stack formed of a semiconductor substrate, an insulating layer and a dielectric layer. This trench is filled with an oxide. An opening is then drilled and filled with metal. It is the metal cylinder which ensures the connection, as in a usual technique and not the stacking of layers, since this comprises two insulating layers.
  • the invention provides an electrical connection (also called "via” conductor), in which the substrate is conductive (or semiconductor), this conduction property being used to make the connection. It will be observed that, in the prior art which has been described, if a conductive substrate was used, this conductivity would not constitute an advantage since the connection would always be made by an added material (layer 16) different from the substrate.
  • the substrate itself which will serve as a means of electrical connection between the two faces.
  • the part of the substrate making this connection will naturally have to be electrically isolated from the rest of the substrate.
  • This isolation function is achieved by at least one trench (which can also be called a partition or wall), extending over the entire thickness of the substrate and completely surrounding the part of the substrate constituting the connection.
  • This or these trench (s) must (must) be at least partially filled (s) to ensure the mechanical strength of the entire subscrat.
  • the subject of the present invention is an electrical connection between two faces of a substrate, characterized in that the substrate is conductive or semiconductor and in that it comprises: - at least one electrically insulating trench s' extending over the entire thickness of the substrate and completely surrounding part of the substrate, this trench being filled over at least part of its height,
  • a first conductive means on one of the faces of the substrate this means being in electrical contact with the substrate in the part completely surrounded by the trench
  • the trench can be formed from two grooves arranged opposite one another and formed from each of the two faces of the substrate. Either of the gorges is filled, or possibly both.
  • the filled part of the trench comprises a first groove etched in the substrate from a first face of the latter, an electrically insulating material filling this first groove.
  • the wall of the first groove is covered with an insulating layer and the groove is filled with another material.
  • the trench comprises a second groove etched in the substrate from a second face thereof, this second groove having a bottom opening into the filled part of the trench.
  • the second groove is also filled.
  • the trench has a single groove partially or completely filled.
  • At least one electrically insulating trench is formed over the entire thickness of the substrate, completely surrounding a part of the substrate, this trench being filled over at least part of its height,
  • a first conductive means is deposited on one of the faces of the substrate, this means being in electrical contact with the substrate on the part completely surrounded by the trench, - a second conductive means is formed on the other face of the substrate in contact electric with the substrate on the part completely surrounded by the trench, said electrical connection being thus established by said part of the substrate completely surrounded by the trench and by the first and second conductive means.
  • two communicating grooves can be etched from the two faces of the substrate and fill at least one or make a single groove and thin the other face of the substrate up to said groove.
  • first and the “second” faces may be the “front” faces and
  • FIG. 2A and 2B illustrate, in top view and in section, a first step of a method according to the invention
  • FIG. 4 illustrates a variant in which this first groove is filled with an insulating material
  • FIG. 5 illustrates another variant in which the wall of the first groove is covered with an insulating layer;
  • FIG. 6 illustrates the filling of this groove thus covered;
  • FIG. 7 illustrates an additional step of forming layers capable of producing circuits or interconnections on the front face of the substrate
  • - Figure 8 illustrates a thinning operation of the substrate by the rear face
  • - Figure 9 illustrates the formation of a contact pad on the rear face of the substrate
  • FIG. 10 illustrates the formation of a second groove in the thinned substrate, and shows the electrical connection completed in an embodiment where this second groove is not filled;
  • FIG. 11 illustrates another variant where the two grooves are filled with insulating materials;
  • FIG. 12A, 12B, 12C show various shapes of trench patterns and illustrate a variant with two triangular grooves.
  • FIGS. 2A and 2B show a substrate 20, having for example the shape of a silicon wafer 500 ⁇ m thick and 2 m ⁇ xcm resistivity.
  • This substrate has a first face 21 which will be called “front” and a second face 22 which will be called “rear”.
  • the front face 21 is covered with a photosensitive resin 24 which is exposed through a mask to define a closed pattern which will correspond to the future trench.
  • this closed pattern is a circular ring 26, the internal diameter of which can be, for example, 180 ⁇ m and the width of which can be 6 ⁇ m.
  • the front face 21 of the substrate is laid bare along the ring 26.
  • the substrate is etched, for example by dry etching, in the bare area to obtain a groove 28 as illustrated in FIG. 3.
  • This groove can have, for example, a depth of 60 ⁇ m.
  • insulating material referenced 30 After removal of the resin, it is possible, in a first variant illustrated in FIG. 4, to fill this groove with insulating material referenced 30.
  • the entire substrate is subjected to thermal oxidation so that a thin insulating layer 32 (in this case a layer of silica if the substrate is made of silicon) covers the inner wall of the groove.
  • An insulating layer 33 is also deposited on the rear face. Then deposited, for example by chemical vaporization (CVD or "Chemical Vapor Deposition") a material preferably having a coefficient of thermal expansion close to that of the substrate. It can be, for example polycrystalline silicon if the substrate is made of silicon. This material bears the reference 36 in FIG. 6.
  • FIG. 7 illustrates a next step in which a first conducting means 38 is produced which, in the illustrated variant is in the form of various conducting tracks on the front face of the substrate. This can be achieved by known methods in microelectronics. • These tracks are in electrical contact with the substrate in the area located inside the first groove. A protective layer 39 can cover the whole.
  • the substrate can then be thinned, as illustrated in FIG. 8, for example by a mechanical, mechanical-chemical or chemical process, until a desired thickness is obtained, for example 250 ⁇ m.
  • the new rear face is referenced 40.
  • a second conductive means 42 for example a contact pad, for example made of metal.
  • a contact pad for example made of metal.
  • the location of the second conductive means 42 corresponds to the interior of the ring defined by the first groove made on the front face.
  • a second groove 44 is then formed, from the rear face 40, with the same photolithography and etching methods as for the first groove. The etching is continued until it leads to the filling material of the first groove. Part 46 of the substrate was thus completely isolated. This part 46 constitutes an electrical connection electrically connecting the first conductive means 38 produced on the front face and the second conductive means 42 of the rear face.
  • FIG. 11 illustrates another embodiment in which the first groove formed on the front face is filled with an insulating material 48 (for example glass, silica, etc.), the second groove formed on the rear face being also filled with an insulating material 50 (glass, silica, etc.).
  • an insulating material 48 for example glass, silica, etc.
  • the second groove formed on the rear face being also filled with an insulating material 50 (glass, silica, etc.).
  • the trench has only one filled groove, the substrate then being thinned until the filling material of the groove is updated.
  • FIGS. 12A, 12B and 12C show three closed profiles 60 other than circular, namely respectively square, triangular and hexagonal. All these forms are given only as examples.
  • FIG. 12B the case is shown where two trenches 61 and 62 have been produced. More could be produced, whatever the shape of the profile.
  • trenches are not necessarily made with two side walls vertical, but could be made with other shapes, for example oblique.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)

Abstract

The invention concerns an electrical connection between two surfaces of a substrate and a method for producing such a connection. Said connection consists of a part (46) of a conductor or semiconductor substrate (20) completely surrounded by at least an electrically insulating trench (32, 36, 44). A contact pad (42) is arranged on the rear surface (40) and strip conductors (38) on the front surface. The connection is produced by the substrate itself. The invention is useful for producing circuits, components, sensors and the like.

Description

CONNEXION ELECTRIQUE ENTRE DEUX FACES D'UN SUBSTRAT ET PROCEDE DE REALISATION ELECTRICAL CONNECTION BETWEEN TWO FACES OF A SUBSTRATE AND METHOD OF MAKING
DESCRIPTIONDESCRIPTION
Domaine techniqueTechnical area
La présente invention a pour objet une connexion électrique entre deux faces d'un substrat et un procédé de réalisation de cette connexion. Elle trouve une application dans la réalisation de composants ou de circuits électroniques ou encore de dispositifs nécessitant des connexions électriques comme des têtes magnétiques ou des capteurs .The subject of the present invention is an electrical connection between two faces of a substrate and a method of making this connection. It finds an application in the production of electronic components or circuits or even devices requiring electrical connections such as magnetic heads or sensors.
Etat de la technique antérieureState of the art
Le document FR-A-2 637 151 décrit un procédé de réalisation de connexions électriques à travers un substrat. Ce procédé est illustré par les figures 1A, 1B, 1C annexées. Sur un substrat 10, on dépose une couche isolante 12 et on balaie, avec un pas défini, la face arrière du substrat par un faisceau laser de longueur d'onde appropriée. Le rayonnement laser est absorbé par le substrat et provoque localement l'abrasion de celui-ci. Quand toute l'épaisseur du substrat a été abrasée, le rayonnement atteint la couche isolante 12 qui, elle, est transparente au rayonnement choisi. Elle demeure intacte et constitue donc un fond pour les trous percés dans le substrat qui, de ce fait, sont borgnes. On réalise ensuite une oxydation thermique créant notamment une couche isolante 14 sur la paroi des trous et sur la face arrière du substrat (Fig. 1A) . On dépose ensuite une couche conductrice 16 qui vient revêtir les parois et le fond des trous . Par une technique de gravure, on vient enlever une partie de la couche isolante 12 recouvrant la couche conductrice face avant pour créer une ouverture 18 (Fig. 1B) .Document FR-A-2,637,151 describes a method of making electrical connections through a substrate. This process is illustrated by Figures 1A, 1B, 1C attached. On an substrate 10, an insulating layer 12 is deposited and the rear face of the substrate is scanned with a defined pitch by a laser beam of appropriate wavelength. The laser radiation is absorbed by the substrate and locally causes abrasion of the latter. When the entire thickness of the substrate has been abraded, the radiation reaches the insulating layer 12 which is transparent to the chosen radiation. It remains intact and therefore constitutes a bottom for the holes drilled in the substrate which, therefore, are blind. Thermal oxidation is then carried out, in particular creating an insulating layer 14 on the wall of the holes and on the rear face of the substrate (FIG. 1A). Then a conductive layer 16 is deposited which coats the walls and the bottom of the holes. Using an etching technique, part of the insulating layer 12 covering the conductive layer on the front face is removed to create an opening 18 (FIG. 1B).
On prend ensuite un contact électrique sur la couche métallique 16 par un plot conducteur 18 (Fig. 1C) . La connexion électrique entre la face avant et la face arrière du substrat est ainsi assurée par le matériau métallique du plot 18 et la couche métallique 16. On peut procéder ensuite, par des moyens traditionnels, à la réalisation du circuit électrique sur la face avant du substrat.Then an electrical contact is made on the metal layer 16 by a conductive pad 18 (Fig. 1C). The electrical connection between the front face and the rear face of the substrate is thus ensured by the metallic material of the pad 18 and the metallic layer 16. It is then possible, by traditional means, to produce the electrical circuit on the front face of the substrate.
Pareil procédé présente au moins deux inconvénients :Such a process has at least two drawbacks:
- comme il implique la présence de trous dans le substrat, il nécessite des précautions particulières lors de certaines opérations liées à la réalisation du circuit, comme par exemple l'étalement d'une résine, le nettoyage des pièces, etc... ;- As it implies the presence of holes in the substrate, it requires special precautions during certain operations related to the realization of the circuit, such as for example the spreading of a resin, the cleaning of parts, etc ...;
- la présence, dans les trous, d'un matériau métallique différent du substrat entraîne des contraintes et déformations lors des étapes mettant en jeu des températures supérieures à la température ambiante ; ces mêmes contraintes et déformations seront très gênantes lors du fonctionnement du composant à température élevée . La présente invention a justement pour but de remédier à ces inconvénients en évitant la présence de trous et en réduisant les différences de nature entre matériaux. Le document EP-0 926 726 décrit un procédé de réalisation d'un circuit électronique dans lequel on perce une tranchée dans un empilement formé d'un substrat semi-conducteur, d'une couche isolante et d'une couche diélectrique. On comble cette tranchée par un oxyde. On perce ensuite une ouverture que l'on remplit de métal. C'est le cylindre métallique qui assure la connexion, comme dans une technique habituelle et non l'empilement de couches, puisque celui-ci comprend deux couches isolantes. L'abrégé de brevet japonais, vol. 1995, n°02, 31 mars 1995 (et JP 06 310 489) décrit un procédé de gravure pour substrat semi-conducteur. Il ne s'agit pas de créer une connexion permanente mais de simplifie.: un processus électrolytique en permettant à la face inférieure d'un substrat qui baigne dans un électrolyte d'être portée à un potentiel approprié.- The presence, in the holes, of a metallic material different from the substrate leads to stresses and deformations during the stages involving temperatures above ambient temperature; these same stresses and deformations will be very troublesome during the operation of the component at high temperature. The object of the present invention is precisely to remedy these drawbacks by avoiding the presence of holes and by reducing the differences in nature between materials. Document EP-0 926 726 describes a method for producing an electronic circuit in which a trench is drilled in a stack formed of a semiconductor substrate, an insulating layer and a dielectric layer. This trench is filled with an oxide. An opening is then drilled and filled with metal. It is the metal cylinder which ensures the connection, as in a usual technique and not the stacking of layers, since this comprises two insulating layers. The Japanese Patent Abstract, Vol. 1995, No. 02, March 31, 1995 (and JP 06 310 489) describes an etching process for a semiconductor substrate. It is not a question of creating a permanent connection but of simplifying: an electrolytic process by allowing the underside of a substrate which is bathed in an electrolyte to be brought to an appropriate potential.
Enfin, l'abrégé de brevet japonais, vol.009, n°251 (E-348), 8 octobre 1985 (1985-10-08) (et JP 60 10 1945) décrit un procédé pour réaliser dans un substrat un composant semi-conducteur et pour isoler ce composant du reste du substrat. Il ne s'agit donc pas de réaliser une connexion entre une face d'un substrat et l'autre face . Exposé de 1 ' inventionFinally, the Japanese patent abstract, vol.009, No. 251 (E-348), October 8, 1985 (1985-10-08) (and JP 60 10 1945) describes a method for producing a semi-component in a substrate -conductor and to isolate this component from the rest of the substrate. It is therefore not a question of making a connection between one face of a substrate and the other face. Statement of the invention
L ' invention propose une connexion électrique (appelée encore "via" conducteur) , dans laquelle le substrat est conducteur (ou semi-conducteur) , cette propriété de conduction étant mise à profit pour réaliser la connexion. On observera que, dans la technique antérieure qui a été décrite, si l'on utilisait un substrat conducteur, cette conductivité ne constituerait pas un avantage puisque la connexion s'effectuerait toujours par un matériau rapporté (la couche 16) différent du substrat.The invention provides an electrical connection (also called "via" conductor), in which the substrate is conductive (or semiconductor), this conduction property being used to make the connection. It will be observed that, in the prior art which has been described, if a conductive substrate was used, this conductivity would not constitute an advantage since the connection would always be made by an added material (layer 16) different from the substrate.
Selon l'invention, c'est le substrat lui-même qui va servir de moyen de connexion électrique entre les deux faces. La partie du substrat réalisant cette connexion devra naturellement être électriquement isolée du reste du substrat. Cette fonction d'isolement est réalisée par au moins une tranchée (qu'on peut appeler aussi cloison ou mur), s ' étendant sur toute l'épaisseur du substrat et entourant complètement la partie du substrat constituant la connexion. Cette ou ces tranchée (s) doit (doivent) être au moins en partie comblée (s) pour assurer la tenue mécanique de l'ensemble du subscrat.According to the invention, it is the substrate itself which will serve as a means of electrical connection between the two faces. The part of the substrate making this connection will naturally have to be electrically isolated from the rest of the substrate. This isolation function is achieved by at least one trench (which can also be called a partition or wall), extending over the entire thickness of the substrate and completely surrounding the part of the substrate constituting the connection. This or these trench (s) must (must) be at least partially filled (s) to ensure the mechanical strength of the entire subscrat.
De façon précise, la présente invention a pour objet une connexion électrique entre deux faces d'un substrat, caractérisée en ce que le substrat est conducteur ou semi-conducteur et en ce qu'elle comprend : - au moins une tranchée électriquement isolante s ' étendant sur toute l'épaisseur du substrat et entourant complètement une partie du substrat, cette tranchée étant comblée sur au moins une partie de sa hauteur,Specifically, the subject of the present invention is an electrical connection between two faces of a substrate, characterized in that the substrate is conductive or semiconductor and in that it comprises: - at least one electrically insulating trench s' extending over the entire thickness of the substrate and completely surrounding part of the substrate, this trench being filled over at least part of its height,
- un premier moyen conducteur sur l'une des faces du substrat, ce moyen étant en contact électrique avec le substrat dans la partie complètement entourée par la tranchée,a first conductive means on one of the faces of the substrate, this means being in electrical contact with the substrate in the part completely surrounded by the trench,
- un second moyen conducteur sur l'autre face du substrat, en contact électrique avec le substrat dans ladite partie complètement entourée par la tranchée, ladite connexion électrique étant ainsi établie par ladite partie du substrat complètement entourée par la tranchée et par le premier et le second moyens conducteurs . La tranchée peut être formée de deux gorges disposées en regard l'une de l'autre et formées à partir de chacune des deux faces du substrat. L'une ou l'autre 'des gorges est comblée, ou éventuellement les deux. Selon un mode de réalisation, la partie comblée de la tranchée comprend une première gorge gravée dans le substrat à partir d'une première face de celui-ci, un matériau électriquement isolant comblant cette première gorge . Selon un autre mode de réalisation, la paroi de la première gorge est recouverte d'une couche isolante et la gorge est comblée par un autre matériau. Cet autre matériau peut être électriquement conducteur ou semiconducteur ; de préférence, ce matériau présente un coefficient de dilatation proche de celui du substrat. Selon encore un autre mode de réalisation, la tranchée comprend une seconde gorge gravée dans le substrat à partir d'une seconde face de celui-ci, cette seconde gorge ayant un fond débouchant dans la partie comblée de la tranchée.- a second conductive means on the other face of the substrate, in electrical contact with the substrate in said part completely surrounded by the trench, said electrical connection being thus established by said part of the substrate completely surrounded by the trench and by the first and the second conductive means. The trench can be formed from two grooves arranged opposite one another and formed from each of the two faces of the substrate. Either of the gorges is filled, or possibly both. According to one embodiment, the filled part of the trench comprises a first groove etched in the substrate from a first face of the latter, an electrically insulating material filling this first groove. According to another embodiment, the wall of the first groove is covered with an insulating layer and the groove is filled with another material. This other material can be electrically conductive or semiconductor; preferably, this material has a coefficient of expansion close to that of the substrate. According to yet another embodiment, the trench comprises a second groove etched in the substrate from a second face thereof, this second groove having a bottom opening into the filled part of the trench.
Selon encore un autre mode de réalisation, la seconde gorge est également comblée. Selon une autre variante, la tranchée comporte une seule gorge partiellement ou totalement comblée. La présente invention a également pour objet un procédé de réalisation de la connexion électrique qui vient d'être définie et qui est caractérisé en ce qu'il comprend les opérations suivantes :According to yet another embodiment, the second groove is also filled. According to another variant, the trench has a single groove partially or completely filled. The present invention also relates to a method for producing the electrical connection which has just been defined and which is characterized in that it comprises the following operations:
- on part d'un substrat conducteur ou semi- conducteur,- we start from a conductive or semiconductor substrate,
- on réalise sur toute l'épaisseur du substrat au moins une tranchée électriquement isolante entourant complètement une partie du substrat, cette tranchée étant comblée sur au moins une partie de sa hauteur,at least one electrically insulating trench is formed over the entire thickness of the substrate, completely surrounding a part of the substrate, this trench being filled over at least part of its height,
- on dépose un premier moyen conducteur sur l'une des faces du substrat, ce moyen étant en contact électrique avec le substrat sur la partie complètement entourée par la tranchée, - on forme un second moyen conducteur sur l'autre face du substrat en contact électrique avec le substrat sur la partie complètement entourée par la tranchée, ladite connexion électrique étant ainsi établie par ladite partie du substrat complètement entourée par la tranchée et par le premier et le second moyens conducteurs .- a first conductive means is deposited on one of the faces of the substrate, this means being in electrical contact with the substrate on the part completely surrounded by the trench, - a second conductive means is formed on the other face of the substrate in contact electric with the substrate on the part completely surrounded by the trench, said electrical connection being thus established by said part of the substrate completely surrounded by the trench and by the first and second conductive means.
Pour réaliser la tranchée, on peut graver deux gorges communiquantes à partir des deux faces du substrat et en combler au moins une ou réaliser une seule gorge et amincir l'autre face du substrat jusqu'à ladite gorge.To make the trench, two communicating grooves can be etched from the two faces of the substrate and fill at least one or make a single groove and thin the other face of the substrate up to said groove.
On peut aussi réaliser plusieurs tranchées, concentriques ou non, et par exemple deux, l'une à l'intérieur l'autre à l'extérieur.It is also possible to make several trenches, concentric or not, and for example two, one inside the other outside.
Dans les définitions qui précèdent, la "première" et la "seconde" faces peuvent être les faces "avant" etIn the above definitions, the "first" and the "second" faces may be the "front" faces and
"arrière" du substrat ou les faces "arrière" et"rear" of the substrate or the "rear" faces and
"avant", ces désignations étant conventionnelles et n'ayant aucun caractère limitatif."before", these designations being conventional and having no limiting character.
Brève description des dessinsBrief description of the drawings
- les figures 1A, 1B, 1C, déjà décrites, illustrent un procédé de réalisation d'une connexion selon l'art antérieur ;- Figures 1A, 1B, 1C, already described, illustrate a method of making a connection according to the prior art;
- les figures 2A et 2B illustrent, en vue de dessus et en coupe, une première étape d'un procédé selon l'invention ;- Figures 2A and 2B illustrate, in top view and in section, a first step of a method according to the invention;
- la figure 3 illustre la formation d'une première gorge ;- Figure 3 illustrates the formation of a first groove;
- la figure 4 illustre une variante dans laquelle on comble cette première gorge par un matériau isolant ;- Figure 4 illustrates a variant in which this first groove is filled with an insulating material;
- la figure 5 illustre une autre variante dans laquelle on recouvre la paroi de la première gorge par une couche isolante ; - la figure 6 illustre le comblement de cette gorge ainsi recouverte ;- Figure 5 illustrates another variant in which the wall of the first groove is covered with an insulating layer; - Figure 6 illustrates the filling of this groove thus covered;
- la figure 7 illustre une étape supplémentaire de formation de couches apte à réaliser des circuits ou interconnexions sur la face avant du substrat ;- Figure 7 illustrates an additional step of forming layers capable of producing circuits or interconnections on the front face of the substrate;
- la figure 8 illustre une opération d'amincissement du substrat par la face arrière ; - la figure 9 illustre la formation d'un plot de contact sur la face arrière du substrat ;- Figure 8 illustrates a thinning operation of the substrate by the rear face; - Figure 9 illustrates the formation of a contact pad on the rear face of the substrate;
- la figure 10 illustre la formation d'une seconde gorge dans le substrat aminci, et montre la connexion électrique achevée dans un mode de réalisation où cette seconde gorge n'est pas comblée ;- Figure 10 illustrates the formation of a second groove in the thinned substrate, and shows the electrical connection completed in an embodiment where this second groove is not filled;
- la figure 11 illustre une autre variante où les deux gorges sont comblées par des matériaux isolants ; - les figures 12A, 12B, 12C montrent diverses formes de motifs de tranchées et illustrent une variante à deux gorges triangulaires .- Figure 11 illustrates another variant where the two grooves are filled with insulating materials; - Figures 12A, 12B, 12C show various shapes of trench patterns and illustrate a variant with two triangular grooves.
Description de modes particuliers de réalisation Les figures 2A et 2B montrent un substrat 20, présentant par exemple la forme d'une tranche de silicium de 500 μm d'épaisseur et de 2 mΩxcm de résistivité. Ce substrat présente une première face 21 qui sera dite "avant" et une seconde face 22 qui sera dite "arrière". La face avant 21 est recouverte d'une résine photosensible 24 que l'on insole à travers un masque pour définir un motif fermé qui va correspondre à la future tranchée. Dans le mode de réalisation illustré, ce motif fermé est un anneau circulaire 26, dont le diamètre intérieur peut être, par exemple, de 180 μm et dont la largeur peut être de 6 μm. En développant la résine, on met à nu la face avant 21 du substrat le long de l'anneau 26.Description of particular embodiments FIGS. 2A and 2B show a substrate 20, having for example the shape of a silicon wafer 500 μm thick and 2 mΩxcm resistivity. This substrate has a first face 21 which will be called "front" and a second face 22 which will be called "rear". The front face 21 is covered with a photosensitive resin 24 which is exposed through a mask to define a closed pattern which will correspond to the future trench. In the illustrated embodiment, this closed pattern is a circular ring 26, the internal diameter of which can be, for example, 180 μm and the width of which can be 6 μm. When developing the resin, the front face 21 of the substrate is laid bare along the ring 26.
On grave, par exemple par gravure sèche, le substrat dans la zone dénudée pour obtenir une gorge 28 comme illustré sur la figure 3. Cette gorge peut avoir, par exemple, une profondeur de 60 μm.The substrate is etched, for example by dry etching, in the bare area to obtain a groove 28 as illustrated in FIG. 3. This groove can have, for example, a depth of 60 μm.
Après retrait de la résine, on peut, dans une première variante illustrée sur la figure 4, remplir cette gorge de matériau isolant référencé 30. Dans une autre variante illustrée sur la figure 5, on soumet tout le substrat à une oxydation thermique pour qu'une mince couche isolante 32, (en l'occurrence une couche de silice si le substrat est en silicium) vienne recouvrir la paroi intérieure de la gorge. Une couche 33 isolante se trouve également déposée sur la face arrière. On dépose ensuite, par exemple par vaporisation chimique (CVD ou "Chemical Vapour Déposition") un matériau présentant de préférence un coefficient de dilatation thermique proche de celui du substrat. Il peut s'agir, par exemple de silicium polycristallin si le substrat est en silicium. Ce matériau porte la référence 36 sur la figure 6. Une couche 37 se trouve être également déposée sur la face arrière. On polit ensuite la face avant, par exemple par un procédé mécano-chimique, pour ne laisser subsister le matériau 36 que dans les gorges. La figure 7 illustre une étape suivante où l'on réalise un premier moyen conducteur 38 qui, dans la variante illustrée se présente sous la forme de diverses pistes conductrices sur la face avant du substrat. Ceci peut être obtenu par des procédés connus en micro-électronique. • Ces pistes sont en contact électrique avec le substrat dans la zone située à l'intérieur de la première gorge. Une couche de protection 39 peut venir recouvrir le tout. On peut amincir ensuite le substrat, comme illustré sur la figure 8, par exemple par un procédé mécanique, mécano-chimique ou chimique, jusqu'à obtenir une épaisseur voulue, par exemple 250 μm. La nouvelle face arrière est référencée 40. La figure 9 montre, sur cette face arrière, un second moyen conducteur 42, par exemple un plot de contact, par exemple en métal. Sur ce plot, on pourra venir souder des fils métalliques ou déposer des billes de soudure (selon l'application). L'emplacement du second moyen conducteur 42 correspond à l'intérieur de l'anneau défini par la première gorge réalisée face avant.After removal of the resin, it is possible, in a first variant illustrated in FIG. 4, to fill this groove with insulating material referenced 30. In another variant illustrated in FIG. 5, the entire substrate is subjected to thermal oxidation so that a thin insulating layer 32 (in this case a layer of silica if the substrate is made of silicon) covers the inner wall of the groove. An insulating layer 33 is also deposited on the rear face. Then deposited, for example by chemical vaporization (CVD or "Chemical Vapor Deposition") a material preferably having a coefficient of thermal expansion close to that of the substrate. It can be, for example polycrystalline silicon if the substrate is made of silicon. This material bears the reference 36 in FIG. 6. A layer 37 is also found to be deposited on the rear face. The front face is then polished, for example by a mechanical-chemical process, in order to leave the material 36 only in the grooves. FIG. 7 illustrates a next step in which a first conducting means 38 is produced which, in the illustrated variant is in the form of various conducting tracks on the front face of the substrate. This can be achieved by known methods in microelectronics. • These tracks are in electrical contact with the substrate in the area located inside the first groove. A protective layer 39 can cover the whole. The substrate can then be thinned, as illustrated in FIG. 8, for example by a mechanical, mechanical-chemical or chemical process, until a desired thickness is obtained, for example 250 μm. The new rear face is referenced 40. FIG. 9 shows, on this rear face, a second conductive means 42, for example a contact pad, for example made of metal. On this pad, we can weld metal wires or deposit solder balls (depending on the application). The location of the second conductive means 42 corresponds to the interior of the ring defined by the first groove made on the front face.
Comme illustré sur la figure 10, on forme alors une seconde gorge 44, à partir de la face arrière 40, avec les mêmes procédés de photolithographie et de gravure que pour la première gorge. La gravure est poursuivie jusqu'à ce qu'elle débouche sur le matériau de remplissage de la première gorge. On a ainsi complètement isolé la partie 46 du substrat. Cette partie 46 constitue une connexion électrique reliant électriquement le premier moyen conducteur 38 réalisé sur la face avant et le second moyen conducteur 42 de la face arrière.As illustrated in FIG. 10, a second groove 44 is then formed, from the rear face 40, with the same photolithography and etching methods as for the first groove. The etching is continued until it leads to the filling material of the first groove. Part 46 of the substrate was thus completely isolated. This part 46 constitutes an electrical connection electrically connecting the first conductive means 38 produced on the front face and the second conductive means 42 of the rear face.
Dans l'exemple pris, avec les dimensions données et le silicium comme substrat, on obtient une connexion dont la résistance est de l'ordre de l'Ohm. Il va de soi qu'il ne s'agit là que d'un exemple ne limitant en rien l'invention. Pour obtenir une autre valeur, on modifiera l'épaisseur du substrat et/ou le diamètre intérieur de l'anneau, et/ou la résistivité du substrat.In the example taken, with the dimensions given and silicon as substrate, a connection is obtained whose resistance is of the order of Ohm. It goes without saying that this is only an example in no way limiting the invention. To obtain another value, the thickness of the substrate and / or the inner diameter of the ring, and / or the resistivity of the substrate, will be modified.
La figure 11 illustre un autre mode de réalisation dans lequel la première gorge pratiquée face avant est comblée par un matériau isolant 48 (par exemple du verre, de la silice, etc...), la seconde gorge pratiquée face arrière étant également comblée par un matériau isolant 50 (verre, silice, etc...).FIG. 11 illustrates another embodiment in which the first groove formed on the front face is filled with an insulating material 48 (for example glass, silica, etc.), the second groove formed on the rear face being also filled with an insulating material 50 (glass, silica, etc.).
Selon un autre mode de réalisation, la tranchée ne comporte qu'une gorge comblée, le substrat étant ensuite aminci jusqu'à mise à jour du matériau de remplissage de la gorge.According to another embodiment, the trench has only one filled groove, the substrate then being thinned until the filling material of the groove is updated.
Pour finir, les figures 12A, 12B et 12C montrent trois profils fermés 60 autres que circulaires, à savoir respectivement carré, triangulaire et hexagonal. Toutes ces formes ne sont données qu'à titre d'exemples. Sur la figure 12B, on a représenté le cas où l'on a réalisé deux tranchées 61 et 62. On pourrait en réaliser davantage, et ce, quelle que soit la forme du profil.Finally, FIGS. 12A, 12B and 12C show three closed profiles 60 other than circular, namely respectively square, triangular and hexagonal. All these forms are given only as examples. In FIG. 12B, the case is shown where two trenches 61 and 62 have been produced. More could be produced, whatever the shape of the profile.
Par ailleurs, les tranchées ne sont pas nécessairement réalisées avec deux parois latérales verticales, mais pourraient être réalisées avec d'autres formes, par exemple obliques. Furthermore, the trenches are not necessarily made with two side walls vertical, but could be made with other shapes, for example oblique.

Claims

REVENDICATIONS
1. Connexion électrique entre deux faces d'un substrat, caractérisée en ce le substrat (20) est conducteur ou semi-conducteur et en ce qu'elle comprend :1. Electrical connection between two faces of a substrate, characterized in that the substrate (20) is conductive or semiconductor and in that it comprises:
- au moins une tranchée électriquement isolante (36, 44) (48, 50) s ' étendant sur toute l'épaisseur du substrat (20) et entourant complètement une partie (46) du substrat, cette tranchée étant comblée sur au moins une partie de sa hauteur,- at least one electrically insulating trench (36, 44) (48, 50) extending over the entire thickness of the substrate (20) and completely surrounding a part (46) of the substrate, this trench being filled in at least one part from its height,
- un premier moyen conducteur (38) sur l'une des faces du substrat (20), ce moyen étant en contact électrique avec le substrat (20) dans la partie (46) complètement entourée par la tranchée,a first conductive means (38) on one of the faces of the substrate (20), this means being in electrical contact with the substrate (20) in the part (46) completely surrounded by the trench,
- un second moyen conducteur (42) sur l'autre face du substrat (20), en contact électrique avec le substrat (20) dans ladite partie (46) complètement entourée par la tranchée, ladite connexion électrique étant ainsi établie par ladite partie (46) du substrat (20) complètement entourée par la tranchée et par le premier (38) et le second (42) moyens conducteurs.- a second conductive means (42) on the other face of the substrate (20), in electrical contact with the substrate (20) in said part (46) completely surrounded by the trench, said electrical connection being thus established by said part ( 46) of the substrate (20) completely surrounded by the trench and by the first (38) and the second (42) conductive means.
2. Connexion électrique selon la revendication 1, dans laquelle la partie comblée de la tranchée comprend une première gorge (28) gravée dans le substrat (20) à partir d'une première face (21) de celui-ci, un matériau électriquement isolant (30) comblant cette première gorge. 2. Electrical connection according to claim 1, in which the filled portion of the trench comprises a first groove (28) etched in the substrate (20) from a first face (21) thereof, an electrically insulating material (30) filling this first groove.
3. Connexion électrique selon la revendication 1, dans laquelle la partie comblée de la tranchée comprend une première gorge gravée (28) dans le substrat (20) à partir d'une première face (21) de celui-ci, une couche électriquement isolante (32) recouvrant la paroi de cette première gorge (28), un autre matériau (36) comblant cette première gorge.3. Electrical connection according to claim 1, in which the filled portion of the trench comprises a first groove etched (28) in the substrate (20) from a first face (21) thereof, an electrically insulating layer (32) covering the wall of this first groove (28), another material (36) filling this first groove.
4. Connexion électrique selon la revendication 3, dans lequel le matériau (36) comblant la première gorge4. Electrical connection according to claim 3, wherein the material (36) filling the first groove
(28) présente un coefficient de dilatation proche de celui du substrat (20) .(28) has a coefficient of expansion close to that of the substrate (20).
5. Connexion électrique selon la revendications 1, dans laquelle la tranchée comprend une partie non comblée formée par une seconde gorge (44) gravée dans le substrat (20) à partir d'une seconde face (40) de celui-ci, cette seconde gorge (44) ayant un fond débouchant dans la partie comblée de la tranchée.5. Electrical connection according to claim 1, in which the trench comprises an unfilled portion formed by a second groove (44) etched in the substrate (20) from a second face (40) thereof, this second groove (44) having a bottom opening into the filled part of the trench.
6. Connexion selon la revendication 1, dans laquelle la tranchée est comblée sur toute sa hauteur et comprend une première gorge gravée dans le substrat à partir de la première face, cette première gorge étant comblée (48) , et une seconde gorge gravée dans le substrat à partir de la seconde face et rejoignant la première gorge, cette seconde gorge étant également comblée ( 50 ) . 6. Connection according to claim 1, in which the trench is filled over its entire height and comprises a first groove etched in the substrate from the first face, this first groove being filled (48), and a second groove etched in the substrate from the second face and joining the first groove, this second groove also being filled (50).
7. Connexion selon la revendication 1, dans laquelle la tranchée comprend une seule gorge partiellement ou totalement comblée.7. Connection according to claim 1, wherein the trench comprises a single groove partially or completely filled.
8. Connexion électrique selon la revendication 1, dans lequel le premier moyen conducteur (38) est formé d'une piste conductrice et le second moyen conducteur est un plot de contact électrique (42) .8. Electrical connection according to claim 1, wherein the first conductive means (38) is formed of a conductive track and the second conductive means is an electrical contact pad (42).
9. Procédé de réalisation d'une connexion électrique entre deux faces d'un substrat selon la revendication 1, caractérisé en ce qu'il comprend les opérations suivantes :9. A method of making an electrical connection between two faces of a substrate according to claim 1, characterized in that it comprises the following operations:
- on part d'un substrat conducteur ou semi- conducteur (20),- we start from a conductive or semiconductor substrate (20),
- on réalise sur toute l'épaisseur du substrat au moins une tranchée électriquement isolante entourant complètement une partie (46) du substrat (20), cette tranchée étant comblée sur au moins une partie de sa hauteur (36) (48,- at least one electrically insulating trench is formed over the entire thickness of the substrate, completely surrounding a part (46) of the substrate (20), this trench being filled over at least part of its height (36) (48,
50) ,50),
- on dépose un premier moyen conducteur (38) sur l'une des faces du substrat (20), ce moyen étant en contact électrique avec le substrat (20) sur la partie (46) complètement entourée par la tranchée,a first conductive means (38) is deposited on one of the faces of the substrate (20), this means being in electrical contact with the substrate (20) on the part (46) completely surrounded by the trench,
- on forme un second moyen conducteur (42) sur l'autre face du substrat en contact électrique avec le substrat (20) sur la partie (46) complètement entourée par la tranchée, ladite connexion électrique étant ainsi établie par ladite partie (46) du substrat (20) complètement entourée par la tranchée et par le premier (38) et le second (42) moyens conducteurs.a second conductive means (42) is formed on the other face of the substrate in electrical contact with the substrate (20) on the part (46) completely surrounded by the trench, said electrical connection being thus established by said part (46) of the substrate (20) completely surrounded by the trench and by the first (38) and the second (42) conductive means.
10. Procédé selon la revendication 9, dans lequel, pour réaliser la partie comblée de la tranchée, on forme, à partir d'une première face (21) du substrat (20), une première gorge (28) et on comble cette première gorge (28) par au moins un matériau isolant (30) .10. The method of claim 9, wherein, to produce the filled portion of the trench, a first groove (28) is formed from a first face (21) of the substrate (20) and this first is filled groove (28) by at least one insulating material (30).
11. Procédé selon la revendication 9, dans lequel, pour réaliser la partie comblée de la tranchée, on forme, à partir d'une première face (21) du substrat11. The method of claim 9, wherein, to produce the filled portion of the trench, one forms, from a first face (21) of the substrate
(20), une première gorge (28), on dépose une couche de matériau électriquement isolant (32) sur les parois de cette première gorge et on comble cette gorge par un autre matériau (36) .(20), a first groove (28), a layer of electrically insulating material (32) is deposited on the walls of this first groove and this groove is filled with another material (36).
12. Procédé selon les revendication 9 ou 11, dans lequel on forme, à partir d'une seconde face (40) du substrat (20), une seconde gorge (44) disposée en regard de la première et débouchant sur le matériau comblant la première gorge.12. The method of claim 9 or 11, wherein there is formed, from a second face (40) of the substrate (20), a second groove (44) disposed opposite the first and leading to the material filling the first throat.
13. Procédé selon la revendication 12, dans lequel on comble la seconde gorge (50) .13. The method of claim 12, wherein the second groove is filled (50).
14. Procédé selon la revendication 12, dans lequel, avant la formation de la seconde gorge (44), on amincit le substrat (20) pour l'amener à une épaisseur voulue et l'on forme la seconde gorge dans le substrat ainsi aminci.14. The method of claim 12, wherein, before the formation of the second groove (44), thins the substrate (20) to bring it to a desired thickness and the second groove is formed in the substrate thus thinned.
15. Procédé selon la revendication 9, dans lequel pour réaliser la tranchée, on forme à partir d'une première face du substrat, une gorge que l'on comble totalement ou partiellement et on amincit le substrat à partir d'une deuxième face jusqu'à atteindre au moins la gorge.15. The method of claim 9, wherein to make the trench, is formed from a first side of the substrate, a groove which is completely or partially filled and the substrate is thinned from a second side up 'to reach at least the throat.
16. Procédé selon la revendication 12, dans lequel on réalise ledit second moyen conducteur avant de former la seconde gorge (44) .16. The method of claim 12, wherein said second conductive means is formed before forming the second groove (44).
17. Procédé selon la revendication 15, dans lequel on réalise ledit second moyen conducteur (42) sur la face amincie, en regard de la partie (46) du substrat qui est complètement entourée par la gorge. 17. The method of claim 15, wherein said second conductive means (42) is carried out on the thinned face, facing the part (46) of the substrate which is completely surrounded by the groove.
EP01909909A 2000-02-28 2001-02-27 Electrical connection between two surfaces of a substrate and method for producing same Ceased EP1259983A1 (en)

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US20030022475A1 (en) 2003-01-30
FR2805709A1 (en) 2001-08-31
JP2003526207A (en) 2003-09-02
WO2001065598A1 (en) 2001-09-07
FR2805709B1 (en) 2002-05-17
JP5329733B2 (en) 2013-10-30
US6815827B2 (en) 2004-11-09

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