EP1227515A3 - Condensateur ensillonné pour circuits intégrés - Google Patents

Condensateur ensillonné pour circuits intégrés Download PDF

Info

Publication number: EP1227515A3
Authority: EP; European Patent Office
Prior art keywords: buried type; capacitor; integrated circuits; type capacitor; substrate
Prior art date: 2001-01-26
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Withdrawn

Application number

EP02250519A

Other languages

German (de)

English (en)

Other versions

EP1227515A2 (fr

Inventor

Takashi Iwamoto

Makoto Yoshimura

Kenichi Hashizume

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Nokia Oyj

Original Assignee

Nokia Oyj

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2001-01-26

Filing date

2002-01-25

Publication date

2008-07-23

2002-01-25 Application filed by Nokia Oyj filed Critical Nokia Oyj

2002-07-31 Publication of EP1227515A2 publication Critical patent/EP1227515A2/fr

2008-07-23 Publication of EP1227515A3 publication Critical patent/EP1227515A3/fr

Status Withdrawn legal-status Critical Current

Links

239000003990 capacitor Substances 0.000 title abstract 5
239000004065 semiconductor Substances 0.000 abstract 4
239000000758 substrate Substances 0.000 abstract 3

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection

Landscapes

Engineering & Computer Science (AREA)
Power Engineering (AREA)
Microelectronics & Electronic Packaging (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Manufacturing & Machinery (AREA)
Ceramic Engineering (AREA)
Semiconductor Integrated Circuits (AREA)
Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

EP02250519A 2001-01-26 2002-01-25 Condensateur ensillonné pour circuits intégrés Withdrawn EP1227515A3 (fr)

Applications Claiming Priority (4)

Application Number	Priority Date	Filing Date	Title
JP2001019003		2001-01-26
JP2001019003		2001-01-26
JP2001369182A JP2002299462A (ja)	2001-01-26	2001-12-03	半導体装置
JP2001369182		2001-12-03

Publications (2)

Publication Number	Publication Date
EP1227515A2 EP1227515A2 (fr)	2002-07-31
EP1227515A3 true EP1227515A3 (fr)	2008-07-23

Family

ID=26608369

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
EP02250519A Withdrawn EP1227515A3 (fr)	2001-01-26	2002-01-25	Condensateur ensillonné pour circuits intégrés

Country Status (3)

Country	Link
US (1)	US6784519B2 (fr)
EP (1)	EP1227515A3 (fr)
JP (1)	JP2002299462A (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6043119A (en) *	1997-08-04	2000-03-28	Micron Technology, Inc.	Method of making a capacitor
JP4467721B2 (ja) *	2000-06-26	2010-05-26	富士通マイクロエレクトロニクス株式会社	コンタクタ及びコンタクタを使用した試験方法
CN1875647B (zh)	2003-10-31	2011-11-09	京瓷株式会社	传输速度决定方法和利用该方法的基站装置、终端装置
WO2007054870A1 (fr) *	2005-11-08	2007-05-18	Nxp B.V.	Dispositif condensateur a tranchee pour applications de decouplage dans une operation haute frequence
DE102007009383A1 (de) *	2007-02-20	2008-08-21	Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.	Halbleiteranordnung und Verfahren zu deren Herstellung
KR100879375B1 (ko) *	2007-09-28	2009-01-20	삼성전기주식회사	캐비티 캐패시터가 내장된 인쇄회로기판
KR100947923B1 (ko) *	2007-11-16	2010-03-15	주식회사 동부하이텍	반도체 소자의 캐패시터 및 그 형성 방법
US8722505B2 (en) *	2010-11-02	2014-05-13	National Semiconductor Corporation	Semiconductor capacitor with large area plates and a small footprint that is formed with shadow masks and only two lithography steps
US8502340B2 (en)	2010-12-09	2013-08-06	Tessera, Inc.	High density three-dimensional integrated capacitors
JP6409211B2 (ja) *	2013-12-20	2018-10-24	独立行政法人国立高等専門学校機構	電子回路要素の製造装置および製造方法
JP6867889B2 (ja) *	2017-06-14	2021-05-12	株式会社豊田中央研究所	半導体装置
WO2019032100A1 (fr) *	2017-08-09	2019-02-14	Intel Corporation	Composants de circuit intégré avec cavités de substrat
US11342379B2 (en) *	2019-05-10	2022-05-24	Taiwan Semiconductor Manufacturing Company, Ltd.	Trench formation scheme for programmable metallization cell to prevent metal redeposit

Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5275974A (en) *	1992-07-30	1994-01-04	Northern Telecom Limited	Method of forming electrodes for trench capacitors
WO1998019337A1 (fr) *	1996-10-29	1998-05-07	Trusi Technologies, Llc	Circuits integres et procedes de fabrication correspondants
JPH10163632A (ja) *	1996-11-26	1998-06-19	Sony Corp	プリント配線板及びその製造方法
US5811868A (en) *	1996-12-20	1998-09-22	International Business Machines Corp.	Integrated high-performance decoupling capacitor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB1593863A (en) *	1977-03-25	1981-07-22	Plessey Co Ltd	Circuit arrangements
US5780335A (en) *	1994-08-26	1998-07-14	International Business Machines Corporation	Method of forming a buried-sidewall-strap two transistor one capacitor trench cell
US5745333A (en) *	1994-11-21	1998-04-28	International Business Machines Corporation	Laminar stackable circuit board structure with capacitor
DE19843641A1 (de) *	1998-09-23	2000-04-20	Siemens Ag	Grabenkondensator mit Isolationskragen und entsprechendes Herstellungsverfahren
JP2000353779A (ja) *	1999-06-10	2000-12-19	Toshiba Corp	化合物半導体装置

2001
- 2001-12-03 JP JP2001369182A patent/JP2002299462A/ja active Pending
2002
- 2002-01-23 US US10/052,266 patent/US6784519B2/en not_active Expired - Fee Related
- 2002-01-25 EP EP02250519A patent/EP1227515A3/fr not_active Withdrawn

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5275974A (en) *	1992-07-30	1994-01-04	Northern Telecom Limited	Method of forming electrodes for trench capacitors
WO1998019337A1 (fr) *	1996-10-29	1998-05-07	Trusi Technologies, Llc	Circuits integres et procedes de fabrication correspondants
JPH10163632A (ja) *	1996-11-26	1998-06-19	Sony Corp	プリント配線板及びその製造方法
US5811868A (en) *	1996-12-20	1998-09-22	International Business Machines Corp.	Integrated high-performance decoupling capacitor

Also Published As

Publication number	Publication date
JP2002299462A (ja)	2002-10-11
EP1227515A2 (fr)	2002-07-31
US20020109175A1 (en)	2002-08-15
US6784519B2 (en)	2004-08-31

Legal Events

Date	Code	Title	Description
2002-06-14	PUAI	Public reference made under article 153(3) epc to a published international application that has entered the european phase	Free format text: ORIGINAL CODE: 0009012
2002-07-31	AK	Designated contracting states	Kind code of ref document: A2 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR
2002-07-31	AX	Request for extension of the european patent	Free format text: AL;LT;LV;MK;RO;SI
2008-06-20	PUAL	Search report despatched	Free format text: ORIGINAL CODE: 0009013
2008-07-23	AK	Designated contracting states	Kind code of ref document: A3 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR
2008-07-23	AX	Request for extension of the european patent	Extension state: AL LT LV MK RO SI
2009-04-01	17P	Request for examination filed	Effective date: 20090119
2009-04-01	AKX	Designation fees paid	Designated state(s): DE FR GB IT
2009-08-05	17Q	First examination report despatched	Effective date: 20090701
2010-04-02	STAA	Information on the status of an ep patent application or granted ep patent	Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN
2010-05-05	18D	Application deemed to be withdrawn	Effective date: 20091112

Publication	Publication Date	Title
USD459706S1 (en)	2002-07-02	Hybrid integrated circuit device
USD589979S1 (en)	2009-04-07	Electronic device
EP1227515A3 (fr)	2008-07-23	Condensateur ensillonné pour circuits intégrés
USD489183S1 (en)	2004-05-04	Electronic toothbrush body
EP1443568A3 (fr)	2008-04-16	Dispositif microfabriqué avec dispositif thermoélectrique et procédé de fabrication
EP1465244A3 (fr)	2004-12-01	Boítier de circuit intégré avec surfaces de dé exposées et fixation auxiliaire
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USD492214S1 (en)	2004-06-29	Electronic article surveillance device
EP1276143A3 (fr)	2006-04-05	Moule
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USD467190S1 (en)	2002-12-17	Electrical test instrument
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USD482698S1 (en)	2003-11-25	Pump for circulating coolant in electronic devices
USD492325S1 (en)	2004-06-29	Pump for circulating coolant in electronic devices