EP1227515A3 - Condensateur ensillonné pour circuits intégrés - Google Patents
Condensateur ensillonné pour circuits intégrés Download PDFInfo
- Publication number
- EP1227515A3 EP1227515A3 EP02250519A EP02250519A EP1227515A3 EP 1227515 A3 EP1227515 A3 EP 1227515A3 EP 02250519 A EP02250519 A EP 02250519A EP 02250519 A EP02250519 A EP 02250519A EP 1227515 A3 EP1227515 A3 EP 1227515A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- buried type
- capacitor
- integrated circuits
- type capacitor
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000003990 capacitor Substances 0.000 title abstract 5
- 239000004065 semiconductor Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001019003 | 2001-01-26 | ||
JP2001019003 | 2001-01-26 | ||
JP2001369182A JP2002299462A (ja) | 2001-01-26 | 2001-12-03 | 半導体装置 |
JP2001369182 | 2001-12-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1227515A2 EP1227515A2 (fr) | 2002-07-31 |
EP1227515A3 true EP1227515A3 (fr) | 2008-07-23 |
Family
ID=26608369
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP02250519A Withdrawn EP1227515A3 (fr) | 2001-01-26 | 2002-01-25 | Condensateur ensillonné pour circuits intégrés |
Country Status (3)
Country | Link |
---|---|
US (1) | US6784519B2 (fr) |
EP (1) | EP1227515A3 (fr) |
JP (1) | JP2002299462A (fr) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6043119A (en) * | 1997-08-04 | 2000-03-28 | Micron Technology, Inc. | Method of making a capacitor |
JP4467721B2 (ja) * | 2000-06-26 | 2010-05-26 | 富士通マイクロエレクトロニクス株式会社 | コンタクタ及びコンタクタを使用した試験方法 |
CN1875647B (zh) | 2003-10-31 | 2011-11-09 | 京瓷株式会社 | 传输速度决定方法和利用该方法的基站装置、终端装置 |
WO2007054870A1 (fr) * | 2005-11-08 | 2007-05-18 | Nxp B.V. | Dispositif condensateur a tranchee pour applications de decouplage dans une operation haute frequence |
DE102007009383A1 (de) * | 2007-02-20 | 2008-08-21 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Halbleiteranordnung und Verfahren zu deren Herstellung |
KR100879375B1 (ko) * | 2007-09-28 | 2009-01-20 | 삼성전기주식회사 | 캐비티 캐패시터가 내장된 인쇄회로기판 |
KR100947923B1 (ko) * | 2007-11-16 | 2010-03-15 | 주식회사 동부하이텍 | 반도체 소자의 캐패시터 및 그 형성 방법 |
US8722505B2 (en) * | 2010-11-02 | 2014-05-13 | National Semiconductor Corporation | Semiconductor capacitor with large area plates and a small footprint that is formed with shadow masks and only two lithography steps |
US8502340B2 (en) | 2010-12-09 | 2013-08-06 | Tessera, Inc. | High density three-dimensional integrated capacitors |
JP6409211B2 (ja) * | 2013-12-20 | 2018-10-24 | 独立行政法人国立高等専門学校機構 | 電子回路要素の製造装置および製造方法 |
JP6867889B2 (ja) * | 2017-06-14 | 2021-05-12 | 株式会社豊田中央研究所 | 半導体装置 |
WO2019032100A1 (fr) * | 2017-08-09 | 2019-02-14 | Intel Corporation | Composants de circuit intégré avec cavités de substrat |
US11342379B2 (en) * | 2019-05-10 | 2022-05-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Trench formation scheme for programmable metallization cell to prevent metal redeposit |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5275974A (en) * | 1992-07-30 | 1994-01-04 | Northern Telecom Limited | Method of forming electrodes for trench capacitors |
WO1998019337A1 (fr) * | 1996-10-29 | 1998-05-07 | Trusi Technologies, Llc | Circuits integres et procedes de fabrication correspondants |
JPH10163632A (ja) * | 1996-11-26 | 1998-06-19 | Sony Corp | プリント配線板及びその製造方法 |
US5811868A (en) * | 1996-12-20 | 1998-09-22 | International Business Machines Corp. | Integrated high-performance decoupling capacitor |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1593863A (en) * | 1977-03-25 | 1981-07-22 | Plessey Co Ltd | Circuit arrangements |
US5780335A (en) * | 1994-08-26 | 1998-07-14 | International Business Machines Corporation | Method of forming a buried-sidewall-strap two transistor one capacitor trench cell |
US5745333A (en) * | 1994-11-21 | 1998-04-28 | International Business Machines Corporation | Laminar stackable circuit board structure with capacitor |
DE19843641A1 (de) * | 1998-09-23 | 2000-04-20 | Siemens Ag | Grabenkondensator mit Isolationskragen und entsprechendes Herstellungsverfahren |
JP2000353779A (ja) * | 1999-06-10 | 2000-12-19 | Toshiba Corp | 化合物半導体装置 |
-
2001
- 2001-12-03 JP JP2001369182A patent/JP2002299462A/ja active Pending
-
2002
- 2002-01-23 US US10/052,266 patent/US6784519B2/en not_active Expired - Fee Related
- 2002-01-25 EP EP02250519A patent/EP1227515A3/fr not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5275974A (en) * | 1992-07-30 | 1994-01-04 | Northern Telecom Limited | Method of forming electrodes for trench capacitors |
WO1998019337A1 (fr) * | 1996-10-29 | 1998-05-07 | Trusi Technologies, Llc | Circuits integres et procedes de fabrication correspondants |
JPH10163632A (ja) * | 1996-11-26 | 1998-06-19 | Sony Corp | プリント配線板及びその製造方法 |
US5811868A (en) * | 1996-12-20 | 1998-09-22 | International Business Machines Corp. | Integrated high-performance decoupling capacitor |
Also Published As
Publication number | Publication date |
---|---|
JP2002299462A (ja) | 2002-10-11 |
EP1227515A2 (fr) | 2002-07-31 |
US20020109175A1 (en) | 2002-08-15 |
US6784519B2 (en) | 2004-08-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
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AK | Designated contracting states |
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AX | Request for extension of the european patent |
Free format text: AL;LT;LV;MK;RO;SI |
|
PUAL | Search report despatched |
Free format text: ORIGINAL CODE: 0009013 |
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AK | Designated contracting states |
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AX | Request for extension of the european patent |
Extension state: AL LT LV MK RO SI |
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17P | Request for examination filed |
Effective date: 20090119 |
|
AKX | Designation fees paid |
Designated state(s): DE FR GB IT |
|
17Q | First examination report despatched |
Effective date: 20090701 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20091112 |