EP1151479A2 - Detecteur optique dote d'une couche filtre constituee de silicium poreux et procede de fabrication dudit detecteur - Google Patents

Detecteur optique dote d'une couche filtre constituee de silicium poreux et procede de fabrication dudit detecteur

Info

Publication number
EP1151479A2
EP1151479A2 EP99967910A EP99967910A EP1151479A2 EP 1151479 A2 EP1151479 A2 EP 1151479A2 EP 99967910 A EP99967910 A EP 99967910A EP 99967910 A EP99967910 A EP 99967910A EP 1151479 A2 EP1151479 A2 EP 1151479A2
Authority
EP
European Patent Office
Prior art keywords
filter layer
filter
optical detector
contacts
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP99967910A
Other languages
German (de)
English (en)
Inventor
Michel Marso
Rüdiger ARENS-FISCHER
Dirk Hunkel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Forschungszentrum Juelich GmbH
Original Assignee
Forschungszentrum Juelich GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Forschungszentrum Juelich GmbH filed Critical Forschungszentrum Juelich GmbH
Publication of EP1151479A2 publication Critical patent/EP1151479A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02165—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
    • H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/96—Porous semiconductor

Definitions

  • the present invention relates to an optical detector with a filter layer made of porous silicon with a laterally variable filter effect according to the preamble of claim 1 and a method for producing such an optical detector according to the preamble of claim 9.
  • dielectric filter layers eg Bragg reflector, Fabry-Perot filter
  • a simple and inexpensive method of manufacturing dielectric filters is to produce superlattices from porous silicon.
  • the raw material silicon also offers the possibility of producing photo receivers (e.g. photo resistors, photo diodes).
  • the object of the present invention is therefore to provide an optical detector which can be produced very simply and inexpensively and which is variable. Furthermore, a manufacturing method for such an optical detector is to be created with which the filter properties, that is to say the variability of the detector, can be set in a simple manner.
  • the object is achieved according to the invention by an optical detector with the characterizing features of claim 1 and by a manufacturing method with the characterizing features of claim 9.
  • contact areas and active filter areas can be predetermined using only a single lithography.
  • the contacts are arranged transversely to the filter layer since individual detectors lying next to one another are thereby almost completely decoupled from one another. However, this reduces the filter area.
  • Figure 1 is a schematic plan view of an optical detector with a first contact geometry for optimal decoupling.
  • FIG. 2 shows a schematic top view of a detector with a second contact geometry for optimal use of area
  • FIG. 3 shows a schematic top view of a spectroscope with an optical detector according to the present invention
  • Fig. 4a, b, c, d is a schematic representation of a manufacturing step in section and in supervision of a manufacturing process.
  • FIG. 1 shows the top view of an optical detector 1 with a substrate 1.1 and contacts 5 arranged transversely to a filter layer 3 made of porous silicon.
  • a filter layer 3 made of porous silicon.
  • the optical detector 1 schematically shows a top view of the optical detector 1 with optimal use of area.
  • the contacts 5 are arranged on the side of the filter layer 3.
  • the entire filter layer 3 is used for the detection.
  • the individual wavelength ranges cannot be completely decoupled from one another.
  • the use of a few contacts 5 leads to a detector 1 or a group of detectors 1 with a wide wavelength range (e.g. for a three-color sensor).
  • many contacts 5 lead to a detector 1 or a group of detectors 1 with a sharp spectral resolution.
  • the contacts 5 can be designed as oh cal contacts and then result in photodetectors in the form of photoresistors, with the internal amplification inherent in the photoresistors, but also with relatively large dark currents.
  • the contacts 5 can therefore also be designed as Schottky contacts, as a result of which the dark currents are very greatly reduced.
  • there is then no internal reinforcement so that the doping of the silicon must be very low so that a space charge zone of the Schottky contacts expands significantly below the filter layer 3.
  • By counter-doping the silicon before metallizing the contacts 5, also realize pn junctions, e.g. B. to further lower the Dunke1 current.
  • the dark current of the optical detector 1 according to the invention with photoresistors can also be reduced in that the thickness of the photoresist layer (substrate 1.1) is chosen to be as small as possible.
  • This can e.g. B. in the production with amorphous silicon or polysilicon by choosing a high-resistance substrate (substrate) and high-resistance, thin silicon layers (filter layers). In the case of single-crystal silicon, the highest possible resistance should also be used.
  • a thin photoresist layer can be achieved by using very thin wafers or by using an insulation layer inside the wafer. As an insulation layer comes e.g. B. Si0 2 ("SIMOX" or "BESOI”) or a pn junction in question.
  • FIG. 3 schematically shows a top view of a completed spectroscope with a contact geometry according to FIG. 1 and the insulation layer 7.
  • the optical detector 1 or such a dielectric filter is manufactured from porous silicon by anodic etching.
  • the location-dependent spectral sensitivity is generated by applying a cross current during the etching process.
  • the porous silicon is then etched away at predetermined locations.
  • the ohmic contacts 5 or Schottky contacts 5 are applied at these points.
  • a suitable arrangement of the contacts 5 results in photoresistors or metal-semiconductor-metal (MSM) diodes, in which the non-porosidized silicon beneath the porous filter layer 3 serves as the photosensitive layer.
  • MSM metal-semiconductor-metal
  • a filter structure is first produced by anodic etching of a disk made of single-crystal silicon 1.1, or a layer made of amorphous or polycrystalline silicon (FIG. 4a).
  • a location-dependent filter effect is created by impressing an additional current along the surface.
  • the insulation layer 7 (z. B. Si0 2 , Si 3 N 4 , Polyi id, plastic film, etc.) is applied to the sample.
  • a strip remains in the middle of the sample, which subsequently serves as a filter layer 3 (FIG. 4b).
  • the application of the insulating layer 7 can, for. B. in a vapor deposition or sputtering system, the structuring can be done using a shadow mask (not shown).
  • Photoresist 9 is then applied to the sample.
  • a protective layer (not shown), e.g. B. made of titanium.
  • the photoresist 9 is exposed to the structures of the future contacts 5.
  • the varnish is developed (Fig. 4c).
  • the porous silicon of the filter layer 3 is then etched with the photoresist 9 as a mask, for. B. by REACTIVE ION ETCHING.
  • the protective layer (not shown) is also etched, and the already applied insulation layer 7 is not or only partially attacked (FIG. 4d).
  • the contact material is applied.
  • the photoresist 9 and the contact material lying thereon are removed (lift-off method).
  • the protective layer (not shown) is etched away.
  • the optical detector 1 is then available as a finished spectroscope from FIG. 3.
  • the production method according to the invention has the advantage that only one lithography is required.
  • the contact material is self-adjusting only on the etched areas applied. Areas from the center of the layer made of porous silicon can be used as active filter areas, that is to say, in contrast to other methods, edge zones with undesired edge effects can be avoided.
  • Optical detector 1 based on silicon, which consists of several photodetectors below a filter layer 3 made of porous silicon, which has a location-dependent filter effect.
  • Optical detector 1 in which the silicon is single crystal or polycrystalline or amorphous.
  • Optical detector 1 in which the location-dependent filter effect is produced during the production of the porous silicon of the filter layer 3 by an additional current through the silicon across the etching current or generally by a non-uniform etching current.
  • Optical detector 1 in which the location-dependent filter effect by a suitable shape of the etching cell or a
  • Optical detector 1 in which the photodetectors are designed as photoresistors or as metal-semiconductor-metal diodes or from pnp (or npn) diodes or from combinations thereof and in which the photodetection essentially in the material under the filter layer 3 takes place.
  • Optical detector 1 in which the size and shape of the individual contacts 5 and filter surfaces are designed such that a desired behavior of spectral sensitivity of the individual detectors is achieved.
  • This location-dependent spectral filter effect can be caused by a non-uniform etching current density, e.g. B. can be achieved by impressing a cross current or by a suitable shaped etching surface or non-uniform exposure during or after the etching.
  • Manufacturing method for an optical detector 1 in which the sample is metallized following the etching. After the metallization, the etching mask is removed, so that the applied metal is structured by lift-off. With this method, only one lithography is required, and the contacts are self-aligning only on the porous silicon spots etched away.
  • the metal surfaces on the insulation layer 7 can be used as bonding and contact surfaces.
  • the insulation layer 7 serves on the one hand to protect against the etching of the underlying porous silicon layers of the filter layer 3 and as mechanical protection when making contact, on the other hand larger leakage currents are avoided when making contact on non-porosized material.
  • the active detector surface can be placed in regions with a defined filter by means of the insulation layer 7, edge regions during the production of the porous silicon can be avoided.
  • Contact 5 can be modified by ion implantation prior to metallization using the etching mask as an implantation mask.
  • the contact resistances can be reduced by increasing the doping; pn junctions are generated by contradoping.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
  • Spectrometry And Color Measurement (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

Détecteur optique à base de silicium, doté d'une couche filtre poreuse à effet filtre pouvant être latéralement modifié, qui comporte une pluralité de contacts photodétecteurs constitués d'un seul tenant avec ledit détecteur, ainsi que procédé de fabrication d'un détecteur optique par application d'une couche d'isolation sur la couche filtre poreuse et maintien de zones filtres actives.
EP99967910A 1999-01-12 1999-12-24 Detecteur optique dote d'une couche filtre constituee de silicium poreux et procede de fabrication dudit detecteur Withdrawn EP1151479A2 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19900879A DE19900879A1 (de) 1999-01-12 1999-01-12 Optischer Detektor mit einer Filterschicht aus porösem Silizium und Herstellungsverfahren dazu
DE19900879 1999-01-12
PCT/DE1999/004096 WO2000041456A2 (fr) 1999-01-12 1999-12-24 Detecteur optique dote d'une couche filtre constituee de silicium poreux et procede de fabrication dudit detecteur

Publications (1)

Publication Number Publication Date
EP1151479A2 true EP1151479A2 (fr) 2001-11-07

Family

ID=7894042

Family Applications (1)

Application Number Title Priority Date Filing Date
EP99967910A Withdrawn EP1151479A2 (fr) 1999-01-12 1999-12-24 Detecteur optique dote d'une couche filtre constituee de silicium poreux et procede de fabrication dudit detecteur

Country Status (6)

Country Link
US (1) US6689633B1 (fr)
EP (1) EP1151479A2 (fr)
JP (1) JP2003505856A (fr)
CA (1) CA2355217A1 (fr)
DE (1) DE19900879A1 (fr)
WO (1) WO2000041456A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10333669A1 (de) * 2003-07-24 2005-03-03 Forschungszentrum Jülich GmbH Photodetektor und Verfahren zu seiner Herstellung
KR101374932B1 (ko) 2007-09-28 2014-03-17 재단법인서울대학교산학협력재단 확산 제한 식각과정에 의한 수평 변환 다공성 실리콘 광학필터의 제조방법 및 그에 의한 필터구조
DE102010004890A1 (de) * 2010-01-18 2011-07-21 Siemens Aktiengesellschaft, 80333 Photodiodenarray, Strahlendetektor und Verfahren zur Herstellung eines solchen Photodiodenarrays und eines solchen Strahlendetektors

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US5043571A (en) * 1988-08-01 1991-08-27 Minolta Camera Kabushiki Kaisha CCD photosensor and its application to a spectrophotometer
GB9213824D0 (en) * 1992-06-30 1992-08-12 Isis Innovation Light emitting devices
DE4319413C2 (de) * 1993-06-14 1999-06-10 Forschungszentrum Juelich Gmbh Interferenzfilter oder dielektrischer Spiegel
EP0645621A3 (fr) * 1993-09-28 1995-11-08 Siemens Ag Capteur.
DE4342527A1 (de) * 1993-12-15 1995-06-22 Forschungszentrum Juelich Gmbh Verfahren zum elektrischen Kontaktieren von porösem Silizium
DE4444620C1 (de) * 1994-12-14 1996-01-25 Siemens Ag Sensor zum Nachweis elektromagnetischer Strahlung und Verfahren zu dessen Herstellung
DE19608428C2 (de) 1996-03-05 2000-10-19 Forschungszentrum Juelich Gmbh Chemischer Sensor
DE19609073A1 (de) 1996-03-08 1997-09-11 Forschungszentrum Juelich Gmbh Farbselektives Si-Detektorarray
DE19653097A1 (de) * 1996-12-20 1998-07-02 Forschungszentrum Juelich Gmbh Schicht mit porösem Schichtbereich, eine solche Schicht enthaltendes Interferenzfilter sowie Verfahren zu ihrer Herstellung
US5939732A (en) * 1997-05-22 1999-08-17 Kulite Semiconductor Products, Inc. Vertical cavity-emitting porous silicon carbide light-emitting diode device and preparation thereof
DE19746089A1 (de) * 1997-10-20 1999-04-29 Forschungszentrum Juelich Gmbh Eine Filterstruktur aufweisendes Bauelement
US6350623B1 (en) * 1999-10-29 2002-02-26 California Institute Of Technology Method of forming intermediate structures in porous substrates in which electrical and optical microdevices are fabricated and intermediate structures formed by the same

Non-Patent Citations (1)

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Also Published As

Publication number Publication date
JP2003505856A (ja) 2003-02-12
CA2355217A1 (fr) 2000-07-20
WO2000041456A9 (fr) 2001-09-27
WO2000041456A2 (fr) 2000-07-20
US6689633B1 (en) 2004-02-10
WO2000041456A3 (fr) 2000-10-19
DE19900879A1 (de) 2000-08-17

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