EP1114210A4 - Procede basse temperature permettant de former une couche epitaxiale sur un substrat semiconducteur - Google Patents
Procede basse temperature permettant de former une couche epitaxiale sur un substrat semiconducteurInfo
- Publication number
- EP1114210A4 EP1114210A4 EP99945264A EP99945264A EP1114210A4 EP 1114210 A4 EP1114210 A4 EP 1114210A4 EP 99945264 A EP99945264 A EP 99945264A EP 99945264 A EP99945264 A EP 99945264A EP 1114210 A4 EP1114210 A4 EP 1114210A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- forming
- low
- semiconductor substrate
- epitaxial layer
- temperature process
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US9805798P | 1998-08-26 | 1998-08-26 | |
US98057P | 1998-08-26 | ||
PCT/US1999/019684 WO2000012785A1 (fr) | 1998-08-26 | 1999-08-26 | Procede basse temperature permettant de former une couche epitaxiale sur un substrat semiconducteur |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1114210A1 EP1114210A1 (fr) | 2001-07-11 |
EP1114210A4 true EP1114210A4 (fr) | 2003-04-16 |
Family
ID=22266670
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP99945264A Withdrawn EP1114210A4 (fr) | 1998-08-26 | 1999-08-26 | Procede basse temperature permettant de former une couche epitaxiale sur un substrat semiconducteur |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP1114210A4 (fr) |
JP (1) | JP2002523908A (fr) |
WO (1) | WO2000012785A1 (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004537855A (ja) * | 2001-07-27 | 2004-12-16 | イーハーペー ゲーエムベーハー−イノヴェイションズ フォー ハイ パフォーマンス マイクロエレクトロニクス/インスティチュート フュア イノヴァティーヴェ ミクロエレクトローニク | 薄いエピタキシャル半導体層の製造方法および装置 |
DE10335460B4 (de) * | 2003-08-02 | 2008-02-28 | Infineon Technologies Ag | Verfahren zum Betreiben einer CVD-Anlage |
CN100418247C (zh) * | 2003-11-07 | 2008-09-10 | 崇越科技股份有限公司 | 多腔体分离外延层有机金属化学气相外延装置及方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4738618A (en) * | 1987-05-14 | 1988-04-19 | Semitherm | Vertical thermal processor |
JPH10209050A (ja) * | 1997-01-24 | 1998-08-07 | Nec Corp | 半導体薄膜の製造方法 |
WO1998035531A1 (fr) * | 1997-01-27 | 1998-08-13 | Semitool, Inc. | Unite de commande de temperature utilisant un modele, pour dispositifs thermiques de production de semi-conducteurs |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5168089A (en) * | 1989-11-27 | 1992-12-01 | At&T Bell Laboratories | Substantially facet-free selective epitaxial growth process |
US5273621A (en) * | 1989-11-27 | 1993-12-28 | At&T Bell Laboratories | Substantially facet-free selective epitaxial growth process |
US5089441A (en) * | 1990-04-16 | 1992-02-18 | Texas Instruments Incorporated | Low-temperature in-situ dry cleaning process for semiconductor wafers |
JPH05217921A (ja) * | 1991-09-13 | 1993-08-27 | Motorola Inc | 材料膜のエピタキシアル成長を行うための温度制御された処理 |
US5498578A (en) * | 1994-05-02 | 1996-03-12 | Motorola, Inc. | Method for selectively forming semiconductor regions |
WO1996015550A1 (fr) * | 1994-11-10 | 1996-05-23 | Lawrence Semiconductor Research Laboratory, Inc. | Compositions silicium-germanium-carbone et processus associes |
-
1999
- 1999-08-26 WO PCT/US1999/019684 patent/WO2000012785A1/fr not_active Application Discontinuation
- 1999-08-26 EP EP99945264A patent/EP1114210A4/fr not_active Withdrawn
- 1999-08-26 JP JP2000567765A patent/JP2002523908A/ja active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4738618A (en) * | 1987-05-14 | 1988-04-19 | Semitherm | Vertical thermal processor |
JPH10209050A (ja) * | 1997-01-24 | 1998-08-07 | Nec Corp | 半導体薄膜の製造方法 |
US6074478A (en) * | 1997-01-24 | 2000-06-13 | Nec Corporation | Method of facet free selective silicon epitaxy |
WO1998035531A1 (fr) * | 1997-01-27 | 1998-08-13 | Semitool, Inc. | Unite de commande de temperature utilisant un modele, pour dispositifs thermiques de production de semi-conducteurs |
Non-Patent Citations (3)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 13 30 November 1998 (1998-11-30) * |
REGOLINI J L ET AL: "EPITAXIAL SILICON CHEMICAL VAPOR DEPOSITION BELOW ATMOSPHERIC PRESSURE", MATERIALS SCIENCE AND ENGINEERING B, ELSEVIER SEQUOIA, LAUSANNE, CH, vol. B04, no. 1/4, 1 October 1989 (1989-10-01), pages 407 - 415, XP000095491, ISSN: 0921-5107 * |
See also references of WO0012785A1 * |
Also Published As
Publication number | Publication date |
---|---|
WO2000012785A1 (fr) | 2000-03-09 |
JP2002523908A (ja) | 2002-07-30 |
EP1114210A1 (fr) | 2001-07-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20010323 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: 7C 30B 25/02 B Ipc: 7C 30B 25/10 B Ipc: 7C 30B 25/16 B Ipc: 7C 30B 25/14 B Ipc: 7C 30B 25/08 A |
|
A4 | Supplementary search report drawn up and despatched |
Effective date: 20030304 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN |
|
18W | Application withdrawn |
Effective date: 20030430 |