EP1114210A4 - Procede basse temperature permettant de former une couche epitaxiale sur un substrat semiconducteur - Google Patents

Procede basse temperature permettant de former une couche epitaxiale sur un substrat semiconducteur

Info

Publication number
EP1114210A4
EP1114210A4 EP99945264A EP99945264A EP1114210A4 EP 1114210 A4 EP1114210 A4 EP 1114210A4 EP 99945264 A EP99945264 A EP 99945264A EP 99945264 A EP99945264 A EP 99945264A EP 1114210 A4 EP1114210 A4 EP 1114210A4
Authority
EP
European Patent Office
Prior art keywords
forming
low
semiconductor substrate
epitaxial layer
temperature process
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP99945264A
Other languages
German (de)
English (en)
Other versions
EP1114210A1 (fr
Inventor
Georg M Ritter
Bernd Tillack
Thomas Morgenstern
Dirk Wolansky
Paul R Mchugh
Kevin Stoddard
Konstantinos Tsakalis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semitool Inc
Original Assignee
Semitool Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semitool Inc filed Critical Semitool Inc
Publication of EP1114210A1 publication Critical patent/EP1114210A1/fr
Publication of EP1114210A4 publication Critical patent/EP1114210A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
EP99945264A 1998-08-26 1999-08-26 Procede basse temperature permettant de former une couche epitaxiale sur un substrat semiconducteur Withdrawn EP1114210A4 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US9805798P 1998-08-26 1998-08-26
US98057P 1998-08-26
PCT/US1999/019684 WO2000012785A1 (fr) 1998-08-26 1999-08-26 Procede basse temperature permettant de former une couche epitaxiale sur un substrat semiconducteur

Publications (2)

Publication Number Publication Date
EP1114210A1 EP1114210A1 (fr) 2001-07-11
EP1114210A4 true EP1114210A4 (fr) 2003-04-16

Family

ID=22266670

Family Applications (1)

Application Number Title Priority Date Filing Date
EP99945264A Withdrawn EP1114210A4 (fr) 1998-08-26 1999-08-26 Procede basse temperature permettant de former une couche epitaxiale sur un substrat semiconducteur

Country Status (3)

Country Link
EP (1) EP1114210A4 (fr)
JP (1) JP2002523908A (fr)
WO (1) WO2000012785A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004537855A (ja) * 2001-07-27 2004-12-16 イーハーペー ゲーエムベーハー−イノヴェイションズ フォー ハイ パフォーマンス マイクロエレクトロニクス／インスティチュート フュア イノヴァティーヴェ ミクロエレクトローニク 薄いエピタキシャル半導体層の製造方法および装置
DE10335460B4 (de) * 2003-08-02 2008-02-28 Infineon Technologies Ag Verfahren zum Betreiben einer CVD-Anlage
CN100418247C (zh) * 2003-11-07 2008-09-10 崇越科技股份有限公司 多腔体分离外延层有机金属化学气相外延装置及方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4738618A (en) * 1987-05-14 1988-04-19 Semitherm Vertical thermal processor
JPH10209050A (ja) * 1997-01-24 1998-08-07 Nec Corp 半導体薄膜の製造方法
WO1998035531A1 (fr) * 1997-01-27 1998-08-13 Semitool, Inc. Unite de commande de temperature utilisant un modele, pour dispositifs thermiques de production de semi-conducteurs

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5168089A (en) * 1989-11-27 1992-12-01 At&T Bell Laboratories Substantially facet-free selective epitaxial growth process
US5273621A (en) * 1989-11-27 1993-12-28 At&T Bell Laboratories Substantially facet-free selective epitaxial growth process
US5089441A (en) * 1990-04-16 1992-02-18 Texas Instruments Incorporated Low-temperature in-situ dry cleaning process for semiconductor wafers
JPH05217921A (ja) * 1991-09-13 1993-08-27 Motorola Inc 材料膜のエピタキシアル成長を行うための温度制御された処理
US5498578A (en) * 1994-05-02 1996-03-12 Motorola, Inc. Method for selectively forming semiconductor regions
WO1996015550A1 (fr) * 1994-11-10 1996-05-23 Lawrence Semiconductor Research Laboratory, Inc. Compositions silicium-germanium-carbone et processus associes

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4738618A (en) * 1987-05-14 1988-04-19 Semitherm Vertical thermal processor
JPH10209050A (ja) * 1997-01-24 1998-08-07 Nec Corp 半導体薄膜の製造方法
US6074478A (en) * 1997-01-24 2000-06-13 Nec Corporation Method of facet free selective silicon epitaxy
WO1998035531A1 (fr) * 1997-01-27 1998-08-13 Semitool, Inc. Unite de commande de temperature utilisant un modele, pour dispositifs thermiques de production de semi-conducteurs

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 13 30 November 1998 (1998-11-30) *
REGOLINI J L ET AL: "EPITAXIAL SILICON CHEMICAL VAPOR DEPOSITION BELOW ATMOSPHERIC PRESSURE", MATERIALS SCIENCE AND ENGINEERING B, ELSEVIER SEQUOIA, LAUSANNE, CH, vol. B04, no. 1/4, 1 October 1989 (1989-10-01), pages 407 - 415, XP000095491, ISSN: 0921-5107 *
See also references of WO0012785A1 *

Also Published As

Publication number Publication date
WO2000012785A1 (fr) 2000-03-09
JP2002523908A (ja) 2002-07-30
EP1114210A1 (fr) 2001-07-11

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