EP1086353A1 - Procede et appareil permettant de determiner la fin du nettoyage d'une chambre de traitement ou la fin de la gravure d'une tranche - Google Patents

Procede et appareil permettant de determiner la fin du nettoyage d'une chambre de traitement ou la fin de la gravure d'une tranche

Info

Publication number
EP1086353A1
EP1086353A1 EP99928616A EP99928616A EP1086353A1 EP 1086353 A1 EP1086353 A1 EP 1086353A1 EP 99928616 A EP99928616 A EP 99928616A EP 99928616 A EP99928616 A EP 99928616A EP 1086353 A1 EP1086353 A1 EP 1086353A1
Authority
EP
European Patent Office
Prior art keywords
radiation
wavelength
analyte gas
indicator species
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP99928616A
Other languages
German (de)
English (en)
Other versions
EP1086353A4 (fr
Inventor
Martin L. Spartz
Anthony S. Bonanno
Peter A. Rosenthal
Matthew Richter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MKS Instruments Inc
Original Assignee
On Line Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by On Line Technologies Inc filed Critical On Line Technologies Inc
Publication of EP1086353A1 publication Critical patent/EP1086353A1/fr
Publication of EP1086353A4 publication Critical patent/EP1086353A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3504—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/85—Investigating moving fluids or granular solids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N2021/8411—Application to online plant, process monitoring

Definitions

  • At least one radiation detector that is responsive to at least the first wavelength of radiation, and that is constructed for generating a first electrical signal that is indicative of the intensity of at least the first wavelength of radiation, the detector being operatively disposed to responsively intercept the at least one radiation beam exiting the gas flow conduit through the other of the windows;
  • the means for generating (and modulating) the beam will comprise a Fourier Transform Infrared spectrometer.
  • the apparatus may comprise separate means, such as a filter wheel, operatively disposed in the beam path for modulating the beam of radiation so as to discriminate radiation of different wavelengths, and most desirably the reaction site will comprise a processing chamber for fabrication of silicon semiconductor devices.
  • Focusing mirrors and/or lenses will normally be used for collecting the radiation and directing it along the beam path through the conduit and upon the detector.
  • Suitable materi- als for fabrication of the corrosion-resistant windows include calcium fluoride, potassium bromide, potassium fluoride, and (preferably) barium fluoride, and although a LiTa0 3 detector will generally be utilized other detectors, such as MCT, lead salt, and DTGS devices, may be employed as appropriate and as may be desired.
  • FIG. 1 is a perspective view showing apparatus embodying the present invention, with associated components of a wafer processing tool;
  • Figure 2 is an exploded perspective view, drawn to a reduced scale, of the apparatus of Figure 1.
  • an infrared filter-based instrument measures the concentration of SiF 4 produced during cleaning of the chamber of a high density plasma, chemical vapor deposition silicon wafer processing system.
  • Unique to the present invention is the recognition that SiF 4 serves as a highly effective and definitive indicator of the clean or etch end point; i.e., when the SiF 4 concentration decreases to an undetectable or threshold level the cleaning or etching end point is deemed to have been reached.
  • filter spectrometry is employed to carry out the method of the invention.
  • the filters used for the detection of SiF 4 are desirably found to have the following characteristics:
  • Most mid-IR sources are hot, DC-powered glowers made from ceramic or metal alloy materials, which generally operate between 900° and 1500°C and (depending upon the size and temperature of the source) may require no cooling.
  • One suitable source is a miniature tungsten carbide glower, operated at 10 volts and 1.8 amps and generating a surface temperature of between 1100° and 1200°C.
  • the IR light may be collimated to increase light intensity passing through the sample and impinging upon the detector.
  • a suitable front surface mirror design uses a one-inch, 90° off- axis aluminum parabola having an aluminum/MgF 2 surface coating; the IR source is placed at the focal point of the mirror for collimation.
  • the IR source unit will usually be connected to one side of a conduit from the processing chamber.
  • Optical transmission will most advantageously be accomplished using two 4-5 mm thick 25.4 mm BaF 2 windows, mounted on both sides of the flange; the base IR path length through the flange will typically be 3.12 inches.
  • the radiation detector unit will be mounted to the adjacent side of the flange to complete the detection system.
  • the IR light will be focussed, using a front surface mirror, and a mirror matching the source mirror will focus light into the detection housing. Modulation of the IR light is effect- ed using a chopper wheel measuring about 1.5 inch in diameter and spinning at 5 Hz, which wheel contains the two required optical filters (analyte and reference) , as described.
  • a lithium tantalate (LiTa0 3 ) pyroelectric IR detector is employed, which is sensitive to thermal energy and is room temperature-compensated to correct for thermal drift. As the detector temperature changes (due to varying light intensity) , corresponding increases and decreases of polarization occur on the dielectric material, which in turn produce variations in charge flow.
  • the detector functions most effectively at slower modulation frequencies, generally less than 10 Hz, and its window is designed to pass 80% of the IR light between 8 ⁇ m and 14 ⁇ m.

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Plasma & Fusion (AREA)
  • Engineering & Computer Science (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Investigating Or Analysing Materials By The Use Of Chemical Reactions (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

Le gaz soutiré d'une chambre de traitement de tranches au silicium, pendant la gravure d'une tranche ou le nettoyage de la chambre avec un plasma contenant un radical sans fluor, est analysé optiquement. L'appareil est constitué d'une source (10) de rayonnement infrarouge qui est montée dans un support (12) auquel est attaché un puits thermique (14). Le support (12) est monté sur un carter (16) de miroir source qui contient un miroir (18) collimateur supporté par un support (20) de miroir source. L'unité de capteur à filtre comprend une plaque (22) de fixation de l'ensemble instrument de point d'achèvement qui est montée sur un carter (24) de miroir de détection et qui contient à son tour un miroir (26) de focalisation du détecteur supporté par un support (28) de miroir de détection.
EP99928616A 1998-06-12 1999-06-11 Procede et appareil permettant de determiner la fin du nettoyage d'une chambre de traitement ou la fin de la gravure d'une tranche Withdrawn EP1086353A4 (fr)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US8908998P 1998-06-12 1998-06-12
US89089P 1998-06-12
US32952099A 1999-06-10 1999-06-10
US329520 1999-06-10
PCT/US1999/013339 WO1999064814A1 (fr) 1998-06-12 1999-06-11 Procede et appareil permettant de determiner la fin du nettoyage d'une chambre de traitement ou la fin de la gravure d'une tranche

Publications (2)

Publication Number Publication Date
EP1086353A1 true EP1086353A1 (fr) 2001-03-28
EP1086353A4 EP1086353A4 (fr) 2001-08-22

Family

ID=26780239

Family Applications (1)

Application Number Title Priority Date Filing Date
EP99928616A Withdrawn EP1086353A4 (fr) 1998-06-12 1999-06-11 Procede et appareil permettant de determiner la fin du nettoyage d'une chambre de traitement ou la fin de la gravure d'une tranche

Country Status (4)

Country Link
EP (1) EP1086353A4 (fr)
JP (1) JP2002517740A (fr)
IL (1) IL140055A0 (fr)
WO (1) WO1999064814A1 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4801709B2 (ja) * 2003-03-14 2011-10-26 キヤノンアネルバ株式会社 Ｃｖｄ装置を用いた成膜方法
JP4385086B2 (ja) * 2003-03-14 2009-12-16 パナソニック株式会社 Ｃｖｄ装置のクリーニング装置およびｃｖｄ装置のクリーニング方法
JP4264479B2 (ja) * 2003-03-14 2009-05-20 キヤノンアネルバ株式会社 Ｃｖｄ装置のクリーニング方法
US7479454B2 (en) 2003-09-30 2009-01-20 Tokyo Electron Limited Method and processing system for monitoring status of system components
JP4884180B2 (ja) * 2006-11-21 2012-02-29 東京エレクトロン株式会社 基板処理装置および基板処理方法
JP2010190824A (ja) * 2009-02-20 2010-09-02 Shimadzu Corp 半導体製造プロセス用吸光分析装置
DE102013101610B4 (de) * 2013-02-19 2015-10-01 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zur Ferndetektion eines nicht infrarotaktiven Zielgases
US10043641B2 (en) * 2016-09-22 2018-08-07 Applied Materials, Inc. Methods and apparatus for processing chamber cleaning end point detection
TWI636253B (zh) * 2017-01-05 2018-09-21 富蘭登科技股份有限公司 一種應用光譜儀來量測氣體解離狀態的量測裝置
WO2018222942A1 (fr) * 2017-06-01 2018-12-06 Aecom (Delaware Corporation) Détection de gaz à l'état de traces par laser à cascade quantique pour la surveillance in situ, la régulation de processus et l'automatisation de la détermination de point final de nettoyage de chambre dans la production de semi-conducteurs

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0767254A1 (fr) * 1995-09-25 1997-04-09 Applied Materials, Inc. Procédé et dispositif de nettoyage d'un tube à vide dans un système de CVD
US5683538A (en) * 1994-12-23 1997-11-04 International Business Machines Corporation Control of etch selectivity
WO1999015710A1 (fr) * 1997-09-22 1999-04-01 On-Line Technologies, Inc. Procede et appareil de controle de cellule
WO1999016108A2 (fr) * 1997-09-23 1999-04-01 On-Line Technologies, Inc. Procede et appareil de detection et de controle des defauts

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4095899A (en) * 1976-03-01 1978-06-20 The United States Of America As Represented By The Secretary Of The Air Force Apparatus for double-beaming in fourier spectroscopy

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5683538A (en) * 1994-12-23 1997-11-04 International Business Machines Corporation Control of etch selectivity
EP0767254A1 (fr) * 1995-09-25 1997-04-09 Applied Materials, Inc. Procédé et dispositif de nettoyage d'un tube à vide dans un système de CVD
WO1999015710A1 (fr) * 1997-09-22 1999-04-01 On-Line Technologies, Inc. Procede et appareil de controle de cellule
WO1999016108A2 (fr) * 1997-09-23 1999-04-01 On-Line Technologies, Inc. Procede et appareil de detection et de controle des defauts

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
N.HERSHKOWITZ AND H.L.MAYNARD: "Plasma characterization and process control diagnostics" JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, vol. 11, no. 4, 1 July 1993 (1993-07-01), pages 1172-1178, XP000403722 New York, NY (US) *
See also references of WO9964814A1 *

Also Published As

Publication number Publication date
IL140055A0 (en) 2002-02-10
JP2002517740A (ja) 2002-06-18
WO1999064814A1 (fr) 1999-12-16
EP1086353A4 (fr) 2001-08-22

Similar Documents

Publication Publication Date Title
US5963336A (en) Chamber effluent monitoring system and semiconductor processing system comprising absorption spectroscopy measurement system, and methods of use
US7351976B2 (en) Monitoring system comprising infrared thermopile detector
US7723685B2 (en) Monitoring system comprising infrared thermopile detector
US6686594B2 (en) On-line UV-Visible light halogen gas analyzer for semiconductor processing effluent monitoring
JP3059262B2 (ja) ガス中の微量水分分析装置
CA2203780C (fr) Detection ultrasensible de contaminants dans un gaz par la spectroscopie laser intracavite
US5841533A (en) Intracavity laser spectroscopy for high sensitivity detection of contaminants in gas
WO1997009607A9 (fr) Detection ultrasensible de contaminants dans un gaz par la spectroscopie laser intracavite
WO1999064814A1 (fr) Procede et appareil permettant de determiner la fin du nettoyage d'une chambre de traitement ou la fin de la gravure d'une tranche
US5689334A (en) Intracavity laser spectroscope for high sensitivity detection of contaminants
US6975393B2 (en) Method and apparatus for implementing an afterglow emission spectroscopy monitor
KR20010110748A (ko) 분석 장치
KR20010021565A (ko) 스펙트로스코픽 센서의 보정 방법
US6970492B2 (en) DUV and VUV laser with on-line pulse energy monitor
JP3101707B2 (ja) ラマン散乱光増強装置
JP3198127B2 (ja) Ｘ線分光装置
KR950010713A (ko) 플라즈마처리의 종점검출 방법 및 장치
EP1325304A1 (fr) Moniteur de spectroscopie d'emission a lueur de post-decharge
Espinoza Trace water vapor determination in nitrogen and corrosive gases using infrared spectroscopy
Ishikawa et al. In–situ Time–Resolved Infrared Spectroscopic Study of Silicon–Oxide Surface during Selective Etching over Silicon in Fluorocarbon Plasma
JP2003007787A (ja) 表面状態測定方法及び装置
JP2000028522A (ja) 非イオン性界面活性剤の濃度の測定方法
JPH0479572B2 (fr)

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20001204

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE DE ES FI FR GB IE IT NL SE

A4 Supplementary search report drawn up and despatched

Effective date: 20010709

AK Designated contracting states

Kind code of ref document: A4

Designated state(s): AT BE DE ES FI FR GB IE IT NL SE

RIC1 Information provided on ipc code assigned before grant

Free format text: 7H 01L 21/66 A, 7H 01J 37/32 B, 7C 23C 14/54 B

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: MKS INSTRUMENTS, INC.

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20030102