EP0974097A4 - Method and apparatus for combining a volatile and a nonvolatile memory array - Google Patents

Method and apparatus for combining a volatile and a nonvolatile memory array

Info

Publication number
EP0974097A4
EP0974097A4 EP97910079A EP97910079A EP0974097A4 EP 0974097 A4 EP0974097 A4 EP 0974097A4 EP 97910079 A EP97910079 A EP 97910079A EP 97910079 A EP97910079 A EP 97910079A EP 0974097 A4 EP0974097 A4 EP 0974097A4
Authority
EP
European Patent Office
Prior art keywords
volatile
combining
nonvolatile memory
memory array
array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP97910079A
Other languages
German (de)
French (fr)
Other versions
EP0974097A1 (en
Inventor
Richard D Pashley
Mark D Winston
Owen W Jungroth
David J Kaplan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of EP0974097A1 publication Critical patent/EP0974097A1/en
Publication of EP0974097A4 publication Critical patent/EP0974097A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/005—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor comprising combined but independently operative RAM-ROM, RAM-PROM, RAM-EPROM cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Memory System Of A Hierarchy Structure (AREA)
EP97910079A 1996-12-31 1997-10-14 Method and apparatus for combining a volatile and a nonvolatile memory array Withdrawn EP0974097A4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US777898 1996-12-31
US08/777,898 US6418506B1 (en) 1996-12-31 1996-12-31 Integrated circuit memory and method for transferring data using a volatile memory to buffer data for a nonvolatile memory array
PCT/US1997/018425 WO1998029816A1 (en) 1996-12-31 1997-10-14 Method and apparatus for combining a volatile and a nonvolatile memory array

Publications (2)

Publication Number Publication Date
EP0974097A1 EP0974097A1 (en) 2000-01-26
EP0974097A4 true EP0974097A4 (en) 2000-09-27

Family

ID=25111643

Family Applications (1)

Application Number Title Priority Date Filing Date
EP97910079A Withdrawn EP0974097A4 (en) 1996-12-31 1997-10-14 Method and apparatus for combining a volatile and a nonvolatile memory array

Country Status (8)

Country Link
US (1) US6418506B1 (en)
EP (1) EP0974097A4 (en)
JP (1) JP2001510612A (en)
KR (1) KR20000069796A (en)
AU (1) AU4754297A (en)
MY (1) MY119477A (en)
TW (1) TW399172B (en)
WO (1) WO1998029816A1 (en)

Families Citing this family (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6418506B1 (en) * 1996-12-31 2002-07-09 Intel Corporation Integrated circuit memory and method for transferring data using a volatile memory to buffer data for a nonvolatile memory array
JP2001025053A (en) 1999-07-09 2001-01-26 Mitsubishi Electric Corp Memory system for portable telephone
KR20010076897A (en) * 2000-01-28 2001-08-17 박태진 Method for control data storing in real time system
US6662263B1 (en) * 2000-03-03 2003-12-09 Multi Level Memory Technology Sectorless flash memory architecture
US6851026B1 (en) * 2000-07-28 2005-02-01 Micron Technology, Inc. Synchronous flash memory with concurrent write and read operation
US6883044B1 (en) * 2000-07-28 2005-04-19 Micron Technology, Inc. Synchronous flash memory with simultaneous access to one or more banks
US7113432B2 (en) 2000-09-14 2006-09-26 Sandisk Corporation Compressed event counting technique and application to a flash memory system
US6691205B2 (en) * 2001-03-05 2004-02-10 M-Systems Flash Disk Pioneers Ltd. Method for using RAM buffers with simultaneous accesses in flash based storage systems
JP2002312232A (en) * 2001-04-10 2002-10-25 Mitsubishi Electric Corp Semiconductor memory device
KR100389867B1 (en) * 2001-06-04 2003-07-04 삼성전자주식회사 Flash memory management method
JP2003015954A (en) 2001-06-28 2003-01-17 Sharp Corp Semiconductor memory device and information apparatus, access period setting method for semiconductor memory device
US6681287B2 (en) * 2001-07-02 2004-01-20 Nanoamp Solutions, Inc. Smart memory
JP4812192B2 (en) * 2001-07-27 2011-11-09 パナソニック株式会社 Flash memory device and method for merging data stored therein
DE60130774T2 (en) * 2001-10-25 2008-07-17 Stmicroelectronics S.R.L., Agrate Brianza Fast programming method for non-volatile memory, especially flash memory and similar memory architectures
US6928527B2 (en) * 2002-01-31 2005-08-09 Saifun Semiconductors Ltd. Look ahead methods and apparatus
US7062619B2 (en) * 2002-01-31 2006-06-13 Saifun Semiconductor Ltd. Mass storage device architecture and operation
JP2003233993A (en) * 2002-02-08 2003-08-22 Matsushita Electric Ind Co Ltd Method for rewriting nonvolatile memory device
EP1514176B1 (en) * 2002-06-06 2007-10-10 Nxp B.V. Method and apparatus for writing data to a non-volatile memory
US6917544B2 (en) 2002-07-10 2005-07-12 Saifun Semiconductors Ltd. Multiple use memory chip
JP2004086991A (en) * 2002-08-27 2004-03-18 Renesas Technology Corp Nonvolatile storage device
FI20021620A (en) * 2002-09-10 2004-03-11 Nokia Corp Memory structure, system and electronics device and method of a memory circuit
JP4499982B2 (en) 2002-09-11 2010-07-14 株式会社日立製作所 Memory system
US7080222B1 (en) * 2002-09-20 2006-07-18 Cypress Semiconductor Corp. Cellular telephone memory with backup memory interface
US7136304B2 (en) 2002-10-29 2006-11-14 Saifun Semiconductor Ltd Method, system and circuit for programming a non-volatile memory array
US7003620B2 (en) * 2002-11-26 2006-02-21 M-Systems Flash Disk Pioneers Ltd. Appliance, including a flash memory, that is robust under power failure
CN1717662B (en) * 2002-11-28 2010-04-28 株式会社瑞萨科技 Memory module, memory system, and information device
US20040128414A1 (en) * 2002-12-30 2004-07-01 Rudelic John C. Using system memory as a write buffer for a non-volatile memory
KR100493884B1 (en) 2003-01-09 2005-06-10 삼성전자주식회사 Control apparatus and method for xip(execution in place) in serial flash memory and flash memory chip using the same
US7178004B2 (en) 2003-01-31 2007-02-13 Yan Polansky Memory array programming circuit and a method for using the circuit
US7533374B2 (en) * 2003-06-12 2009-05-12 Intel Corporation Adaptively storing system code in non-volatile storage
JP2005108304A (en) 2003-09-29 2005-04-21 Toshiba Corp Semiconductor memory and its control method
US7475186B2 (en) * 2003-10-31 2009-01-06 Superspeed Software System and method for persistent RAM disk
US20050132128A1 (en) * 2003-12-15 2005-06-16 Jin-Yub Lee Flash memory device and flash memory system including buffer memory
US7173863B2 (en) * 2004-03-08 2007-02-06 Sandisk Corporation Flash controller cache architecture
JP2005295433A (en) * 2004-04-05 2005-10-20 Sanyo Electric Co Ltd Data recording apparatus
US7177782B2 (en) * 2004-06-18 2007-02-13 Lenovo (Singapore) Pte. Ltd. Methods and arrangements for capturing runtime information
US20060036803A1 (en) * 2004-08-16 2006-02-16 Mori Edan Non-volatile memory device controlled by a micro-controller
US7638850B2 (en) 2004-10-14 2009-12-29 Saifun Semiconductors Ltd. Non-volatile memory structure and method of fabrication
KR100695890B1 (en) * 2004-10-29 2007-03-19 삼성전자주식회사 Multi-chip system and its data transfer method
US8053812B2 (en) 2005-03-17 2011-11-08 Spansion Israel Ltd Contact in planar NROM technology
US7242623B2 (en) * 2005-07-12 2007-07-10 Infineon Technologies Flash Gmbh & Co. Kg Non-volatile memory cell device, programming element and method for programming data into a plurality of non-volatile memory cells
EP1746645A3 (en) 2005-07-18 2009-01-21 Saifun Semiconductors Ltd. Memory array with sub-minimum feature size word line spacing and method of fabrication
US7668017B2 (en) 2005-08-17 2010-02-23 Saifun Semiconductors Ltd. Method of erasing non-volatile memory cells
US7808818B2 (en) 2006-01-12 2010-10-05 Saifun Semiconductors Ltd. Secondary injection for NROM
US7692961B2 (en) 2006-02-21 2010-04-06 Saifun Semiconductors Ltd. Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
US7760554B2 (en) 2006-02-21 2010-07-20 Saifun Semiconductors Ltd. NROM non-volatile memory and mode of operation
US8253452B2 (en) 2006-02-21 2012-08-28 Spansion Israel Ltd Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same
US7441102B2 (en) * 2006-02-28 2008-10-21 Freescale Semiconductor, Inc. Integrated circuit with functional state configurable memory and method of configuring functional states of the integrated circuit memory
US20070250652A1 (en) * 2006-04-24 2007-10-25 Atmel Corporation High speed dual-wire communications device requiring no passive pullup components
US7701779B2 (en) 2006-04-27 2010-04-20 Sajfun Semiconductors Ltd. Method for programming a reference cell
US7716411B2 (en) * 2006-06-07 2010-05-11 Microsoft Corporation Hybrid memory device with single interface
KR101320917B1 (en) * 2006-10-02 2013-10-21 삼성전자주식회사 Method for writing file by different writing scheme according to file characteristic and electronic device thereof
US7554855B2 (en) * 2006-12-20 2009-06-30 Mosaid Technologies Incorporated Hybrid solid-state memory system having volatile and non-volatile memory
US8560760B2 (en) * 2007-01-31 2013-10-15 Microsoft Corporation Extending flash drive lifespan
KR100881597B1 (en) * 2007-02-02 2009-02-03 지인정보기술 주식회사 System and method for processing read request
US7657572B2 (en) * 2007-03-06 2010-02-02 Microsoft Corporation Selectively utilizing a plurality of disparate solid state storage locations
US20080306723A1 (en) * 2007-06-08 2008-12-11 Luca De Ambroggi Emulated Combination Memory Device
CN101364438B (en) * 2007-08-08 2011-04-06 奇岩电子股份有限公司 Memory apparatus and method enhancing NAND array flash memory
KR20090024971A (en) * 2007-09-05 2009-03-10 삼성전자주식회사 Method and apparatus for cache using sector set
US20090083482A1 (en) * 2007-09-21 2009-03-26 Vizio Increasing the speed at which flash memory is written and read
US8429329B2 (en) * 2007-10-17 2013-04-23 Micron Technology, Inc. Serial interface NAND
US8352671B2 (en) * 2008-02-05 2013-01-08 Spansion Llc Partial allocate paging mechanism using a controller and a buffer
US8275945B2 (en) 2008-02-05 2012-09-25 Spansion Llc Mitigation of flash memory latency and bandwidth limitations via a write activity log and buffer
KR100903051B1 (en) * 2008-06-23 2009-06-18 지인정보기술 주식회사 System and method for processing read request
TW201011755A (en) * 2008-09-10 2010-03-16 Skymedi Corp Flash memory system and its data recovery method
EP2273373A1 (en) * 2009-07-02 2011-01-12 Vodafone Holding GmbH Storing of frequently modified data in an IC card
US8275981B2 (en) * 2009-07-23 2012-09-25 Stec, Inc. Flash storage system and method for accessing a boot program
US8713379B2 (en) 2011-02-08 2014-04-29 Diablo Technologies Inc. System and method of interfacing co-processors and input/output devices via a main memory system
JP2012203443A (en) * 2011-03-23 2012-10-22 Toshiba Corp Memory system and control method of memory system
US10096350B2 (en) * 2012-03-07 2018-10-09 Medtronic, Inc. Memory array with flash and random access memory and method therefor, reading data from the flash memory without storing the data in the random access memory
US9899066B2 (en) 2012-09-10 2018-02-20 Texas Instruments Incorporated Priority based backup in nonvolatile logic arrays
US8812744B1 (en) 2013-03-14 2014-08-19 Microsoft Corporation Assigning priorities to data for hybrid drives
US9626126B2 (en) 2013-04-24 2017-04-18 Microsoft Technology Licensing, Llc Power saving mode hybrid drive access management
US9946495B2 (en) 2013-04-25 2018-04-17 Microsoft Technology Licensing, Llc Dirty data management for hybrid drives
EP3036641B1 (en) 2013-08-21 2023-11-01 Everspin Technologies, Inc. Non-destructive write/read leveling
KR102249416B1 (en) 2014-06-11 2021-05-07 삼성전자주식회사 Memory system and method of operating memory system
US10241683B2 (en) 2015-10-26 2019-03-26 Nxp Usa, Inc. Non-volatile RAM system
US20210271393A1 (en) * 2020-03-02 2021-09-02 Silicon Motion, Inc. Method and apparatus for performing data access management of all flash array server

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4007452A (en) 1975-07-28 1977-02-08 Intel Corporation Wafer scale integration system
JPH0281398A (en) 1988-09-19 1990-03-22 Hitachi Ltd Semiconductor memory
JPH0289296A (en) 1988-09-27 1990-03-29 Nec Corp Nonvolatile memory circuit
US5359569A (en) * 1991-10-29 1994-10-25 Hitachi Ltd. Semiconductor memory
JP3328321B2 (en) * 1992-06-22 2002-09-24 株式会社日立製作所 Semiconductor storage device
JPH06195258A (en) * 1992-07-08 1994-07-15 Nec Corp Semiconductor memory
JPH06215589A (en) 1993-01-18 1994-08-05 Hitachi Ltd Semiconductor memory
US5488711A (en) * 1993-04-01 1996-01-30 Microchip Technology Incorporated Serial EEPROM device and associated method for reducing data load time using a page mode write cache
US5509134A (en) * 1993-06-30 1996-04-16 Intel Corporation Method and apparatus for execution of operations in a flash memory array
US5438549A (en) * 1994-02-28 1995-08-01 Intel Corporation Nonvolatile memory with volatile memory buffer and a backup power supply system
US6418506B1 (en) * 1996-12-31 2002-07-09 Intel Corporation Integrated circuit memory and method for transferring data using a volatile memory to buffer data for a nonvolatile memory array

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
No further relevant documents disclosed *
See also references of WO9829816A1 *

Also Published As

Publication number Publication date
MY119477A (en) 2005-05-31
EP0974097A1 (en) 2000-01-26
AU4754297A (en) 1998-07-31
TW399172B (en) 2000-07-21
US6418506B1 (en) 2002-07-09
KR20000069796A (en) 2000-11-25
WO1998029816A1 (en) 1998-07-09
JP2001510612A (en) 2001-07-31

Similar Documents

Publication Publication Date Title
EP0974097A4 (en) Method and apparatus for combining a volatile and a nonvolatile memory array
GB2330228B (en) Method and apparatus for protecting flash memory
GB2318230B (en) A ferroelectric memory device and a nondestructive acessing method thereof
GB2354863B (en) Methods and apparatus for updating a nonvolatile memory
GB2317472B (en) Memory testing apparatus
GB9604496D0 (en) Embedded memory for field programmable gate array
SG68590A1 (en) Method for programming a nonvolatile memory
EP0877792A4 (en) A method and apparatus for holding cells
GB2320377B (en) A nonvolatile ferroelectric memory device
EP1086465A4 (en) Method and apparatus for a serial access memory
EP0452724A3 (en) Circuit and method for erasing eeprom memory arrays
AU6319598A (en) Method and apparatus for verifying erasure of memory blocks within a non-volatile memory structure
SG74586A1 (en) Method and apparatus for failsafing and extending range for write
GB2315887B (en) Method and apparatus for re-programming memory device
AU5715396A (en) A method and apparatus for limiting access to a nonvolatile memory device
SG63746A1 (en) Method and system for testing memory
GB2308701B (en) Flash memory device and programming method using the same
EP0723262A3 (en) scanning memory device and error correction method
HK1026058A1 (en) A method and apparatus for programming semiconductor memory
EP0601747A3 (en) Nonvolatile memory device and method for manufacturing same.
GB9507552D0 (en) Method for erasing and verifying nonvolatile semiconductor memory device
GB2320810A8 (en) A flash memory array
GB2320782B (en) Method of pre-programming a flash memory cell
EP0864155A4 (en) Voltage reference generator for eprom memory array
EP0512454A3 (en) Method and apparatus for accessing non-volatile memory

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 19990722

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): DE IE

A4 Supplementary search report drawn up and despatched

Effective date: 20000810

AK Designated contracting states

Kind code of ref document: A4

Designated state(s): DE IE

17Q First examination report despatched

Effective date: 20010618

GRAG Despatch of communication of intention to grant

Free format text: ORIGINAL CODE: EPIDOS AGRA

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN

18W Application withdrawn

Withdrawal date: 20020807