EP0702775A4 - Thermische behandlungsvorrichtung für dünne film-halbleiterblättchen - Google Patents

Thermische behandlungsvorrichtung für dünne film-halbleiterblättchen

Info

Publication number
EP0702775A4
EP0702775A4 EP95911781A EP95911781A EP0702775A4 EP 0702775 A4 EP0702775 A4 EP 0702775A4 EP 95911781 A EP95911781 A EP 95911781A EP 95911781 A EP95911781 A EP 95911781A EP 0702775 A4 EP0702775 A4 EP 0702775A4
Authority
EP
European Patent Office
Prior art keywords
thin film
thermal treatment
film wafer
wafer
thermal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP95911781A
Other languages
English (en)
French (fr)
Other versions
EP0702775A1 (de
Inventor
Hyun-Su Kyung
Won-Song Choi
Jung-Ho Shin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Medical Systems Inc
Original Assignee
Varian Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Associates Inc filed Critical Varian Associates Inc
Publication of EP0702775A1 publication Critical patent/EP0702775A1/de
Publication of EP0702775A4 publication Critical patent/EP0702775A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/005—Transport systems

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Furnace Charging Or Discharging (AREA)
EP95911781A 1994-02-17 1995-02-15 Thermische behandlungsvorrichtung für dünne film-halbleiterblättchen Withdrawn EP0702775A4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR9402820 1994-02-17
KR1019940002820A KR950025850A (ko) 1994-02-17 1994-02-17 박막의 열처리 장치
PCT/US1995/002008 WO1995023427A2 (en) 1994-02-17 1995-02-15 Apparatus for thermal treatment of thin film wafer

Publications (2)

Publication Number Publication Date
EP0702775A1 EP0702775A1 (de) 1996-03-27
EP0702775A4 true EP0702775A4 (de) 1996-07-31

Family

ID=19377325

Family Applications (1)

Application Number Title Priority Date Filing Date
EP95911781A Withdrawn EP0702775A4 (de) 1994-02-17 1995-02-15 Thermische behandlungsvorrichtung für dünne film-halbleiterblättchen

Country Status (3)

Country Link
EP (1) EP0702775A4 (de)
KR (1) KR950025850A (de)
WO (1) WO1995023427A2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5791895A (en) * 1994-02-17 1998-08-11 Novellus Systems, Inc. Apparatus for thermal treatment of thin film wafer
JP5080043B2 (ja) 2006-08-31 2012-11-21 新電元工業株式会社 半導体装置の製造方法、半導体装置の製造用治具、および半導体装置の製造装置
CN110993550B (zh) * 2019-12-25 2022-12-09 北京北方华创微电子装备有限公司 半导体热处理设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0350752A2 (de) * 1988-07-15 1990-01-17 Balzers Aktiengesellschaft Haltevorrichtung für eine Scheibe sowie Anwendung derselben
EP0452779A2 (de) * 1990-04-20 1991-10-23 Applied Materials, Inc. Klemmechanismus für physikalische Dampfniederschlagvorrichtung
WO1994024840A2 (en) * 1993-04-26 1994-11-10 Varian Associates, Inc. Thin film heat treatment apparatus

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60169148A (ja) * 1984-02-13 1985-09-02 Dainippon Screen Mfg Co Ltd 基板の搬送方法及びその装置
US5228501A (en) * 1986-12-19 1993-07-20 Applied Materials, Inc. Physical vapor deposition clamping mechanism and heater/cooler
WO1990013687A2 (en) * 1989-05-08 1990-11-15 N.V. Philips' Gloeilampenfabrieken Apparatus and method for treating flat substrates under reduced pressure
US5222310A (en) * 1990-05-18 1993-06-29 Semitool, Inc. Single wafer processor with a frame
JPH0651777U (ja) * 1991-12-26 1994-07-15 日空工業株式会社 真空乾燥装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0350752A2 (de) * 1988-07-15 1990-01-17 Balzers Aktiengesellschaft Haltevorrichtung für eine Scheibe sowie Anwendung derselben
EP0452779A2 (de) * 1990-04-20 1991-10-23 Applied Materials, Inc. Klemmechanismus für physikalische Dampfniederschlagvorrichtung
WO1994024840A2 (en) * 1993-04-26 1994-11-10 Varian Associates, Inc. Thin film heat treatment apparatus

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO9523427A3 *

Also Published As

Publication number Publication date
WO1995023427A3 (en) 1995-12-28
WO1995023427A2 (en) 1995-08-31
KR950025850A (ko) 1995-09-18
EP0702775A1 (de) 1996-03-27

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Legal Events

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