EP0686211A1 - System for sputtering compositions onto a substrate - Google Patents
System for sputtering compositions onto a substrateInfo
- Publication number
- EP0686211A1 EP0686211A1 EP94909756A EP94909756A EP0686211A1 EP 0686211 A1 EP0686211 A1 EP 0686211A1 EP 94909756 A EP94909756 A EP 94909756A EP 94909756 A EP94909756 A EP 94909756A EP 0686211 A1 EP0686211 A1 EP 0686211A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- sputtering
- disk
- chamber
- magnetrons
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/851—Coating a support with a magnetic layer by sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
- H01J37/3429—Plural materials
Definitions
- the invention relates to the development of magnetic recording media for use in Winchester-type hard disk drives. Specifically, the invention relates to a method and apparatus for depositing and evaluating different coating compositions on a disk substrate for eventual use in a Winchester-type hard disk drive.
- magnétique recording media Several factors are important in designing magnetic recording media. Among such factors is a high coercivity, especially where high magnetic recording density is desired. Generally, the stronger the magnetic coercivity of the disk, the higher the flux density achievable on the disk, and hence the higher the data bit density per unit area. Another important factor in the design of recording media is the resistance of the media to corrosion and wear. Corrosion and wear of the disk media occurs over the life of the drive and results from constantly reading from and writing to the media, incidental contact between the read/write heads and the media, and contamination within the controlled environment of the disk drive where the disk is located.
- Sputter deposition is popular due to the manufacturing advantages available with conventional sputtering processes.
- sputtering is performed in an evacuated chamber using an inert gas, typically argon, with one or more substrates either remaining static during deposition and being rotated about the target (a "planetary” system) , or being transported past the target (an "in-line” system) .
- the technique involves bombarding the surface of a target material to be deposited as the film with electrostatically accelerated argon ions.
- electric fields are used to accelerate ions in the plasma gas, causing them to impinge on the target surface.
- momentum transfer atoms and electrons are dislodged from the target surface in an area known as the erosion region.
- Target atoms deposit on the substrate, forming a film.
- the disk substrate material comprises glass, nickel-phosphorus plated aluminum disks, or ceramic materials.
- a substrate may first be supplied with a chromium layer overlying the substrate surface.
- the chromium layer is generally 50 ⁇ A-200 ⁇ A thick.
- a magnetic layer which may be a magnetic alloy comprised of so-called "hard magnetic materials" such as alloys of nickel, cobalt, or iron.
- a magnetic layer comprising a sputtered film of cobalt-chrome-tantalum (CoCrTa)
- the film is deposited to a thickness in the range of 30 ⁇ A-85 ⁇ A.
- a carbon overcoat layer is provided to a thickness of about 25 ⁇ A-35 ⁇ A.
- sputtering offers the ability to tailor film properties to a considerable extent by making minor adjustments to process parameters.
- Alloys of cobalt, nickel and chromium deposited on a chromium underlayer are highly desirable as films for magnetic recording media such as disks utilized in Winchester-type hard disk drives.
- CoCr alloys with tantalum are also particularly attractive films for magnetic recording media.
- prior art deposition systems were unable to produce disks having fully functional capability for use in Winchester-type disk drives.
- CoCr alloys with 10 at.% Ta (and chromium content between 5 and 25 at.%) were sputtered onto multiple layers of chromium to produce magnetic films with low modulation even without texturing the substrate surface and highly desirable crystalline microstructure and magnetic anisotropy.
- Magnetron sputtering processes have been developed which have been somewhat successful in achieving high throughput manufacture of sputtered magnetic media.
- the apparatus includes several consecutive regions for sputtering individual layers within a single sputtering chamber through which preheated disk substrates mounted on a pallet or other vertical carrier proceed at velocities up to about 10 mm/sec (1.97 ft/min) , though averaging only about 3 mm/sec (0.6 ft/min).
- the first sputtering region deposits chromium (1,000 to 5,000 A) on a circumferentially textured disk substrate.
- the next region deposits a layer (200 to 1,500 A) of a magnetic alloy such as CoNi.
- a protective layer (200 to 800 A) of a wear- and corrosion-resistant material such as amorphous carbon is deposited.
- an object of the invention is to provide a method and apparatus for economically testing new magnetic media coating compositions in a real-world disk drive environment.
- a further object of the invention is to provide a method and apparatus for developing a single sputtered magnetic recording disk.
- Yet another object of the invention is to provide a method and apparatus for testing new coating compositions in a disk drive.
- a further object of the invention is to provide the aforesaid method and apparatus includes means for quickly and economically altering the composition of the magnetic coating layers deposited on the disk surface.
- Yet another object of the invention is to provide a unique method and apparatus for simultaneously depositing a plurality of coating components onto a disk substrate.
- the apparatus includes a sputtering chamber; and at least a first and second sputtering magnetrons associated with a first target comprising a first component and a second target comprising a second component, for simultaneously sputtering a multi-component coating onto the surface of the disk in the chamber with an even distribution over the circumference of the disk.
- a rotating chuck is positioned in the chamber opposite the targets for mounting a substrate thereon.
- each target comprising one of the element or composition of elements to be sputtered
- a shield structure is mounted so as to provide relative isolation between the respective target and magnet assembly structures such that each target and magnet assembly is exposed to approximately one-quarter of the disk at any given time.
- a method for manufacturing a disk for a disk drive comprises the steps of: placing a disk in a sealed environment opposite at least three sputtering magnetrons; heating and rotating the disk; and simultaneously depositing at least three coatings onto the disk by energizing the magnetrons wherein only a fraction of the disk is exposed to any one magnetron at one time.
- FIG. 1 is a perspective view of the apparatus for manufacturing a magnetic recording disk for a disk drive in accordance with the present invention.
- Fig. 2 is a plan view of the rear portion of the apparatus in accordance with the present invention.
- Fig. 3 is a perspective partial cutaway view of the apparatus for manufacturing a disk drive in accordance with the present invention.
- Fig. 4 is a cross-sectional view along line 4-4 of the apparatus in Fig. 2.
- Fig. 5 is a partial, perspective, exploded view of the certain internal components of the apparatus in accordance with the present invention.
- Fig. 6 is a cross-sectional view along line 6-6 of the apparatus in Fig. 2.
- Fig. 7 is a partial, cross-sectional view of the apparatus of the present invention illustrating two different types of magnetron cathode assemblies which may be used in accordance with the present invention.
- Fig. 7A is a partial, cross-sectional view of the apparatus of the present invention illustrating an alternative magnetron assembly for use in accordance with the present invention.
- Fig. 8 is a plan view of one embodiment of the sputtering shield which may be used in the present invention.
- a unique method and apparatus for manufacturing individual magnetic recording disks is provided.
- the apparatus and method facilitates experimentation with multiple coating structures in the manufacture of sputtered magnetic disks by allowing economical manufacture of such disks with various novel compositions sputtered thereon.
- the apparatus provides a economical and efficient manner in which testing of such novel disk coating compositions may occur under real world environmental conditions, such as in a working hard disk drive.
- Apparatus 10 includes a housing generally defined by a cylindrical body 12, a front plate 16, and a rear plate 14, all manufactured out of aluminum. Front plate 16 and rear plate 14 are secured to cylindrical housing 12 by a plurality of socket head machine screws 18 (shown only in respect to front plate 16 in Fig. 1) . Grip handles 20,22 are provided to allow for removal of front plate 16 during maintenance of apparatus 10.
- a door 40 is mounted to front plate 16 to allow access to the interior of the housing.
- Door 40 is mounted to front plate 16 by a hinge assembly 42, which includes hinge 43, hinge block 44, and hinge pin 45.
- a motor assembly including motor 55, coupling 59, ferro-fluidic feedthrough 53, and motor mount plate 56, is mounted on door 40 to rotate a chuck assembly, discussed below, on which a disk substrate 25 is provided into sputtering apparatus 10.
- Each clamp 46 is comprised of a clamp spacer arm 47 secured to front plate 16 by a hex jam nut 48.
- a toggle shoe clamp 49 is secured in the spacer arm 47 and clamps door 40 to front plate 16.
- a handle 38 is provided on door 40 to allow the user to access the interior housing by rotating door 40 about hinge pin 45.
- Three view ports 27, 28, and 29 are provided on apparatus 10 to allow the system user to visually monitor processing within apparatus 10.
- Each view port is comprised of a window clamp ring 26 which secures a 1.5 millimeter thick glass window 24 which is manufactured from calcium fluoride or Pyrex ® .
- 0-rings (not shown) are provided between clamp ring 26 and glass substrate 24, and each clamp ring for ports 27,28,29 is secured to door 40 or cylindrical housing 12 by socket head machine screws 27a, 28a, and 29a, respectively.
- ports 28 and 29 are positioned symmetrically on opposite sides of cylindrical body 12 and, because of this location, are closer to the sputtering environment within the housing. As a result, ports 28, 29 are fitted with window shutter assemblies 160a-b, respectively to protect windows 24 from stray sputtering atoms.
- Each sputtering assembly 160a-b includes a shutter 161a, coupled to a handle 162a-b by a shaft 163 fitted through body 12 by coupling 164a-b.
- rotation of handles 162a, 162b correspondingly rotates window shutters, such as shutter 161a, toward or away from windows 24b,24c.
- the through-holes are filled by 1-inch diameter plugs 90 and a rear flange 91 (Fig. 4) , located in antechamber 32 and secured to rear plate 16 by washer 92 and socket head machine screw 93.
- An 0- ring 94 is provided in flange 91 to ensure a sealed environment in antechamber 32 and to prevent external pressures from affecting the sputtering process.
- Two coolant elbow couplings 98 2 . 98 3 are secured to rear wall 16 and feed through front plate 16 to supply coolant material to the interior of the housing, as will be discussed in further detail below.
- Electrical feedthrough 23 is provided on door 40 to allow the electrical conduits for the heater system and substrate bias supply (discussed below) to be provided to the interior cavity of the system.
- Sputtering apparatus 10 may be mounted on a 8-inch diameter pipe mount 15 by a base flange 13 secured to pipe mount 15 by socket head bolts 17 and hex-nuts 19. (Fig. 3) .
- a filter screen 11 is provided on a mounting flange 11A in pipe mount 15.
- At the base of pipe mount 15 is a roughing pump and an 8-inch diameter cryogenic evacuation pump which serve to evacuate both antechamber 32 and sputtering chamber 30 when sputtering of disk 25 is to begin.
- door 40 needs to be secured in a closed position (shown in Fig. 4) , prior to evacuation of apparatus 10.
- Figure 3 is a partial, perspective cutaway view of apparatus 10.
- Figure 4 is a cross-sectional view along line 4-4 of Figure 2.
- Fig. 5 is an unexploded view of the sputtering assembly, and other internal components of apparatus 10.
- Fig. 6 is a top view along line 6-6 in Fig. 2.
- the interior of apparatus 10 is divided into sputtering chamber 30 and antechamber 32 by an inner chamber wall 34 which is secured to front plate 16 by socket head cap bolts 33 provided through spacers 36.
- Inner chamber wall 34 has a circular aperture 35 included therein which allows disk 25 to be exposed to sputtering chamber 30 when door 40 is in a closed position (as shown in Figs. 1, 2 and 4) .
- a sputtering magnetron assembly 60 Also provided adjacent sputtering chamber 30, as shown in Figs. 2 and 3, is a sputtering magnetron assembly 60.
- Magnetron assembly 60 includes four sputtering magnetrons 62 1 -62 4 .
- Shield assembly 70 is provided adjacent the sputtering 'magnetron assembly 60 to isolate the flux of each particular sputtering magnetron 62, -62 4 (when the system is energized) to one-fourth of the surface area of a particular disk substrate 25 when substrate 25 is provided adjacent to sputtering chamber 30 and exposed to the energized assembly 60.
- shield assembly 70 is secured to rear wall 14 by a mounting flange 71 which is coupled to rear wall 14 by socket head machine screws (not shown) .
- shield assembly 70 includes a cylindrical main portion 72 having one end abutting sputtering magnetron assembly 60, and a second end positioned adjacent inner chamber wall 34. The second end includes an interior flange 73 which defines an aperture opening 74 corresponding to aperture 35 in inner wall 34.
- FIG. 72 Four intersecting shield walls 76 ⁇ -76 4 are mounted in cylindrical casing 72 to provide a cross-hair shield arrangement for sputtering magnetrons 62 1 -62 4 .
- Intersecting shield walls 76,-76 4 divide cylindrical casing 72 into four separate regions 77 1 -77 4 , with each region 77 1-4 corresponding to a single magnetron 6 1 _ 4 , respectively.
- disk substrate 25 is positioned adjacent the sputtering shields 76, one quarter of the surface area of disk substrate 25 is exposed to each individual magnetron at a particular time.
- a magnetic recording disk can be manufactured which is suitable for use in a working disk drive.
- motor 55 is coupled to a chuck assembly 50 and, as noted above, is mounted on door 40 to provide selective rotation of chuck assembly 50.
- motor 55 is coupled to door 40 by a ferro-fluidic feedthrough 53 secured to door 40 by socket machine head screws 54 with an 0-ring 56a providing a seal between feedthrough 53 and door 40.
- a motor mount 56 is secured to feedthrough 53 and encases motor coupling 58 which may be comprised of a piece of serrated aluminum, secured with two set screws, allowing flexibility in the coupling of the output shaft 55A of motor 55 to the output shaft 53a of the ferro- fluidic feedthrough 53 for alignment of the shafts.
- a coupling 59 secures motor mount 57 to motor 55.
- Chuck assembly 50 includes disk holder 52, secured to an insulator post 51 by four set screws (not shown) .
- a washer 52A secures disk 25 in place with a buttonhead hex socket machine screw 51A.
- Shaft 53a of feedthrough 53 is coupled to insulator post 51, which is secured to disk holder 52 when disk 25 is secured in disk holder 52.
- Motor 55 is capable of generating disk rotation up to 600 rpm.
- sputtering magnetron assembly 60 is comprised of four sputtering magnetrons 62 1 -62 4 which are secured to rear plate 14 by a cathode mounting plate 63.
- Mounting plate 63 is bolted to rear plate 14 by socket head machine screws 61.
- a water jacket 64 surrounds cathode mounting plate 63, and two 0-rings 63a, 63b are provided to ensure a watertight seal from the circulating coolant water in sputtering cathodes 62 1 -62 4 .
- Each sputtering magnetron 62 1 -62 4 is secured to cathode mounting plate 63 by a hex machine screw 62a.
- Gas channel 66 is provided in cathode mounting plate 63 and is coupled to an elbow fitting 65.
- Elbow 65 is coupled to a gas supply, allowing sputtering gas, such as argon, to be provided to sputtering chamber 30 and antechamber 32.
- Water supply outlets 67 are provided to couple a liquid coolant such as water, to each sputtering magnetron 62 1-4 .
- a cover 68 encases sputtering magnetron assembly 60 and includes cutout regions (not shown) to allow for coupling of external gas and water supply lines to conduits such as elbow 65 and inlet 67. (It should be understood that with respect to sputtering magnetrons 62, two fittings such as elbow 65 are required -- one as an inlet, one as an outlet -- to provide coolant circulation through the magnetrons.)
- a shutter 80 is provided to allow for selective exposure of disk substrate 25 to the sputtering magnetron assembly 62.
- Exposure shutter 80 is coupled to a shutter mount 82 which is secured to rear plate 14 by a rotary ferro-fluidic feedthrough 84, to provide isolation between sputtering chamber 30 and the external environment.
- a handle 86 is coupled to the ferro fluidic feedthrough 84 to allow a system operator to selectively rotate exposure shutter 80 between an open, exposure position and a closed, shield position, as shown in Fig. 3, to expose or shield disk 25.
- holes 78,79 are provided in shield assembly 70, and inner chamber wall 34, respectively, to ensure pressure equalization in sputtering chamber 30 and antechamber 32.
- sputtering gas is introduced through channel 66 and shutter 80 is closed, a pressure differential between the interior of sputtering assembly 70 and the rest of the housing interior developed.
- opening of shutter 80 would cause the pressure within the chamber to change, a condition which is unacceptable because sputtering pressure is a characteristic which must be optimized prior to exposing the disk to the sputtering plasma.
- Figs. 3 and 5 holes 78,79 are provided in shield assembly 70, and inner chamber wall 34, respectively, to ensure pressure equalization in sputtering chamber 30 and antechamber 32.
- Coolant line 95 is connected to a circulating coolant supply by an output coupling 96- ⁇ which is provided through rear plate 14.
- An 0-ring 97 separates coupling 96, from rear plate 14, and an elbow fitting 98 is coupled to the exterior of rear plate 14.
- a second coupling (not shown) is provided at a location horizontally opposite feedthrough 84 thus providing a coolant flow path from coupling 96,, around shield assembly 70 in a coil-like manner, to the second coupling (not shown) .
- Second coolant line 95 2 is provided around circular aperture 35 in innerchamber wall 34. Second coolant line 95 2 runs from coupling 96 2 to coupling 96 3 , both provided through rear chamber wall 16, and secured to elbow fittings 98 2 and 98 3 , respectively.
- Magnetrons 62 1 _ 4 and shield assembly 70 are necessary to maintain sputtering magnetrons 62 1 _ 4 and shield assembly 70 at a constant temperature.
- Magnetrons 62 1-4 generate heat when coupled to a power supply to energize the argon gas to a plasma state. Power on the order of lkW is provided to the cathode of each sputtering magnetron, generating the sputtering plasma. As such, a great amount of heat is generated which must be removed by the system's circulating coolant flow.
- a heating assembly 100 (Figs. 3, 6, and 7) is provided to raise the temperature of substrate 25 on chuck assembly 50. Heating the substrate contributes to increasing the quality of films sputtered onto disk substrates.
- Heating assembly 100 is comprised of a housing 101 coupled by crossbeam 102 to an insulator 103
- Heating assembly 100 thus may raise the temperature of substrate 25 to a temperature of about 300°C.
- an infrared detector assembly 110 is provided on door 40 to allow the system operator to monitor the temperature of disk 25 and disk holder 52.
- Detector assembly 110 is comprised of a window fitting 111 which is secured to door 40 by a socket head screw 112.
- a piece of calcium fluoride glass 113 is positioned in the end of window fitting 111 and secured thereto by a cap 114, two 0-rings (not shown) , are included for seating the assembly, with one positioned between cap 114 and glass 113, and one between glass 113 and fitting 111.
- a detector 115 such as a Thermopile Detector with KBR window, manufactured by Dexter Research Center, Inc., and accompanying amplifier, lays in fitting 111, is suitable for use in one embodiment.
- detector 115 is a photodiode with silicon windows which measures the temperature of substrate 25 to allow the system operator to calibrate the temperature lamp and the desired temperature of the disk.
- a bore 116 in door 40 is present to allow detector 115 to be selectively inserted and retracted by the user.
- a coupling assembly 120 for a capacitance manometer positioned adjacent shield assembly 70.
- the manometer allows the user to monitor the gas pressure within sputtering chamber 30.
- a capacitance manometer of the type manufactured by MRS Instruments, Inc. is suitable for use with the apparatus.
- the coupling assembly includes a T-fitting 121 secured to apparatus 10 by a clamp fitting 122 including a center ring 123 and an O-ring 124 clamped thereabout.
- a conduit 125 provides the gas pressure present in assembly 70 directly to T-fitting 121.
- the capacitance manometer may thereafter be positioned adjacent to the apparatus and coupled to either outlet of the T-fitting. As noted above, the pressure measured by the capacitance manometer will be stabilized over the interior of apparatus 10, allowing the user to precisely control the sputtering pressure prior to, and during, sputtering.
- biasing assembly 126 (shown in Fig. 4) is provided to allow the system operator to bias disk substrate 25 by applying a bias potential to disk holder 52 during the coating process. Biasing of the substrate has been found useful in a number of coating applications.
- biasing assembly 126 comprises a post 127 generally manufactured from a high- durability insulator, such as ceramic, and a copper electrode 128 which has a arcuate shape (with curvature arc going into the page) allowing the electrode to brush against disk holder 52 while disk holder 52 is rotating, making sufficient contact therewith in a spring-like fashion to bias disk substrate 25, while not providing significant resistance to the motor assembly.
- Fig. 7 is a partial enlarged cross-section view from the same perspective as Fig.
- Fig. 7 Shown in Fig. 7 are two different cathode designs, one for a magnetic coating target, the other for a non- magnetic coating target. It should be understood by those skilled in the art that the particular arrangement, placement and composition of the assemblies is dependent on the materials utilized and the coating structure which is being manufactured. Assembly 62 may be used with a magnetic coating target material, such as cobalt or its alloys, or a composite thereof. Assembly 62 4 in Fig. 7 is an example of a cathode assembly which is suitable for use with a nonmagnetic target material. With regard to the description thereof, assemblies 62 and 62 4 have similar parts; thus, like parts have identical reference numerals, with those parts peculiar to each assembly delineated by subscripts.
- assemblies 622, 62 4 each include an anode 131 which is secured to cathode mounting block 63 by hex nut screw 132.
- the cathode assembly includes a cathode body 133, which is coupled to cathode mounting plate 63 by a hex nut machine screw (not shown) in insulator ring 135.
- Insulator ring 135 separates cathode body 133 from cathode mounting plate 63.
- O-ring 141 is provided in insulator ring 135 to provide a tight seal between sputtering chamber 30 and the external environment.
- O-ring 139 is provided between cathode body 133 and insulator 135.
- cathode body 133 houses disk-shaped magnets 145 2 and 145 2 and ring shaped magnets 146 2 and 146 2 .
- the permanent magnets 145 and 146 are magnetically energized to have a force F in the direction shown in Fig. 7. (It should be readily understood that the magnetic polarity could be reversed without affecting the performance of the magnetrons.)
- cathode body 133 houses disk shaped magnet 145 3 and ring-shaped magnet 147.
- a coolant fitting 140 is mounted in cathode body 133 and provides a conduit to coolant channel 144, formed adjacent sputtering target 1382- Coolant is provided through fitting 140 to channel 144 to circulate therethrough and out a separate fitting (not shown) , identical to fitting 140, to maintain a nominal temperature level in assemblies 622"62 4 thereby preventing damage to the sputtering magnetrons.
- a rear pole piece 136 is provided to secure magnets 145, 146 and 147 into cathode body 133.
- a cathode nut 137 secures target 1382 or 138 2 to the cathode body 133.
- target material 138 2 is much thicker than the magnetic target material 1382 in cathode assembly 622-
- approximately one-half of the permanent magnetic pieces used in cathode assembly 62 2 are required in assembly 62 4 , although the direction of permanent magnetization therein are the same.
- a d.c. bias is applied to the cathode assembly to induce sputtering.
- the bias may be in the range of 300-700V and, in the pressure of argon gas, will induce sputtering from the target.
- FIG. 7A shows an alternative embodiment of the magnetic cathode assembly 61, a suitable for use in the apparatus. Like parts have like designations with the assembly presented in Figure 7.
- cathode body 133a is thicker than body 133 of assembly 62, and the bores housing magnet ' s 145, 146 have been provided through the entire width of the body.
- plugs 133a, 133b are provided adjacent magnets 146.
- Plugs 133a, 133b are preferably comprised of magnetically permeable stainless steel, such as series 420 or 430 stainless steel.
- Two rear pole pieces 136a, 136b are placed abutting magnets 146 2 and 145 2 , respectively.
- Fig. 8 shows an alternate embodiment for employing an additional shield 150 in shield structure 70.
- Shield 150 is provided to optimize sputtering of compositions where one element sputters at a slower rate than others, such as a cobalt-chrome-tantalum coating such as those discussed in the Background section.
- shield 150 ensures that, in cases where small percentages of a particular element are desired in a particular composition, oxides will not form as a result of interaction between the sputtering element and background of water vapor in the system due to the lower sputtering rate.
- coatings such as those discussed in the background section of the application, because tantalum is present in small doses, it would sputter at a much lower rate than other elements in the compositions.
- the amount of water vapor present in the system can cause formation of unwanted Ta0 2 .
- tantalum can be sputtered at a higher rate over a reduced area to achieve the same relative mix of components.
- the shield structure may be adapted for use with different coating materials at different rates where necessary to eliminate oxide formation.
- a coating of Co-Cr-Ta with respective percentages of 10.5%-4%-85.5% may be generated by providing assembly 622 w ⁇ - tn a target material of Co, assembly 62 2 with a target material of Cr, assembly 62 3 with a target material of Ta, and assembly 62 4 with a target material of carbon.
- a substrate is mounted on chuck and rotated at about 300rpm while the sputtering chamber is evacuated to a pressure of 5 x 10' 7 Torr, and argon gas is allowed to flow into the chamber to backfill to 1.0 mTorr.
- Heating assembly 100 is activated to heat the substrate to a temperature of approximately 200-250C 0 .
- a bias of 200-800V is applied to the sputtering assemblies and sputtering induced.
- shutter 80 is rotated to expose the disk substrate to the sputtering environment. Typically, such exposure lasts approximately 10 minutes before the shutter is returned to the "closed" position. It should be understood that the factors set forth above will vary based on the type of coating being prepared. A drive- ready disk, having the capacity to be recorded to and read from is thus produced.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US1979493A | 1993-02-19 | 1993-02-19 | |
US19794 | 1993-02-19 | ||
PCT/US1994/001896 WO1994019508A1 (en) | 1993-02-19 | 1994-02-18 | System for sputtering compositions onto a substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0686211A1 true EP0686211A1 (en) | 1995-12-13 |
EP0686211A4 EP0686211A4 (en) | 1997-09-17 |
Family
ID=21795064
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP94909756A Withdrawn EP0686211A4 (en) | 1993-02-19 | 1994-02-18 | System for sputtering compositions onto a substrate |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0686211A4 (en) |
JP (1) | JPH08507326A (en) |
WO (1) | WO1994019508A1 (en) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL1002878C2 (en) * | 1996-04-16 | 1997-10-17 | Robi Omp Mastering Dev Gmbh | Sputtering device. |
EP0837491A3 (en) * | 1996-10-21 | 2000-11-15 | Nihon Shinku Gijutsu Kabushiki Kaisha | Composite sputtering cathode assembly and sputtering apparatus with such composite sputtering cathode assembly |
JP2924891B1 (en) * | 1998-05-15 | 1999-07-26 | 日本電気株式会社 | Sputtering equipment |
JP4137277B2 (en) * | 1999-04-15 | 2008-08-20 | 株式会社アルバック | Sputtering equipment |
US6328856B1 (en) * | 1999-08-04 | 2001-12-11 | Seagate Technology Llc | Method and apparatus for multilayer film deposition utilizing rotating multiple magnetron cathode device |
JP4516199B2 (en) * | 2000-09-13 | 2010-08-04 | キヤノンアネルバ株式会社 | Sputtering apparatus and electronic device manufacturing method |
JP4393897B2 (en) * | 2004-03-12 | 2010-01-06 | 新明和工業株式会社 | Deposition equipment |
US7828929B2 (en) | 2004-12-30 | 2010-11-09 | Research Electro-Optics, Inc. | Methods and devices for monitoring and controlling thin film processing |
US20070209932A1 (en) * | 2006-03-10 | 2007-09-13 | Veeco Instruments Inc. | Sputter deposition system and methods of use |
KR100829923B1 (en) * | 2006-08-30 | 2008-05-16 | 세메스 주식회사 | Spin head and method using the same for treating substrate |
CN112877658A (en) * | 2021-01-12 | 2021-06-01 | 河北北方学院 | Magnetic control spraying device for surface coating of metal composite material and working method |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0230652A1 (en) * | 1985-12-30 | 1987-08-05 | International Business Machines Corporation | Apparatus for creating a vacuum deposited alloy or composition and application of such an apparatus |
JPH02239104A (en) * | 1989-03-10 | 1990-09-21 | Toshiba Corp | Production of oxide superconductor thin film |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4021277A (en) * | 1972-12-07 | 1977-05-03 | Sprague Electric Company | Method of forming thin film resistor |
US4472259A (en) * | 1981-10-29 | 1984-09-18 | Materials Research Corporation | Focusing magnetron sputtering apparatus |
US4816127A (en) * | 1984-11-15 | 1989-03-28 | Xidex Corporation | Method of producing thin-film storage disk |
US4834855A (en) * | 1985-05-02 | 1989-05-30 | Hewlett-Packard Company | Method for sputter depositing thin films |
JPH0766584B2 (en) * | 1986-04-11 | 1995-07-19 | 富士写真フイルム株式会社 | Method for manufacturing magneto-optical recording medium |
JPS63288004A (en) * | 1987-05-20 | 1988-11-25 | Matsushita Electric Ind Co Ltd | Manufacture of film with magnetical anisotropy prependicular to film surface |
JPH01268869A (en) * | 1988-04-20 | 1989-10-26 | Fuji Photo Film Co Ltd | Sputtering device |
JPH083146B2 (en) * | 1989-10-16 | 1996-01-17 | 富士通株式会社 | Thin film formation method |
-
1994
- 1994-02-18 JP JP6519232A patent/JPH08507326A/en active Pending
- 1994-02-18 WO PCT/US1994/001896 patent/WO1994019508A1/en not_active Application Discontinuation
- 1994-02-18 EP EP94909756A patent/EP0686211A4/en not_active Withdrawn
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0230652A1 (en) * | 1985-12-30 | 1987-08-05 | International Business Machines Corporation | Apparatus for creating a vacuum deposited alloy or composition and application of such an apparatus |
JPH02239104A (en) * | 1989-03-10 | 1990-09-21 | Toshiba Corp | Production of oxide superconductor thin film |
Non-Patent Citations (2)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 014, no. 555 (C-0786), 10 December 1990 & JP 02 239104 A (TOSHIBA CORP), 21 September 1990, * |
See also references of WO9419508A1 * |
Also Published As
Publication number | Publication date |
---|---|
JPH08507326A (en) | 1996-08-06 |
EP0686211A4 (en) | 1997-09-17 |
WO1994019508A1 (en) | 1994-09-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6156171A (en) | Sputtering magnetron | |
US6063244A (en) | Dual chamber ion beam sputter deposition system | |
US6338777B1 (en) | Method and apparatus for sputtering thin films | |
US6641702B2 (en) | Sputtering device | |
US5762766A (en) | Method for depositing magnetic film on both substrate surfaces and mechanism for performing same | |
US6413380B1 (en) | Method and apparatus for providing deposited layer structures and articles so produced | |
WO1994019508A1 (en) | System for sputtering compositions onto a substrate | |
JP5280459B2 (en) | Sputtering equipment | |
US6254747B1 (en) | Magnetron sputtering source enclosed by a mirror-finished metallic cover | |
US5693199A (en) | Single chamber sputtering assembly | |
US5714044A (en) | Method for forming a thin carbon overcoat in a magnetic recording medium | |
US7041202B2 (en) | Timing apparatus and method to selectively bias during sputtering | |
JPH11302841A (en) | Sputtering system | |
JP2971586B2 (en) | Thin film forming equipment | |
US7294242B1 (en) | Collimated and long throw magnetron sputtering of nickel/iron films for magnetic recording head applications | |
US5783262A (en) | Growth of oxide exchange bias layers | |
US20050252766A1 (en) | Cathode apparatus to selectively bias pallet during sputtering | |
JPS59173265A (en) | Sputtering device | |
JPH031810B2 (en) | ||
JPH08269705A (en) | Sputtering device | |
JP5364455B2 (en) | Magnetron sputtering system and in-line film deposition system | |
JP4502160B2 (en) | Magnetic film forming method, magnetic film forming apparatus, and magnetic recording disk manufacturing method | |
JP3286736B2 (en) | Manufacturing equipment for magnetic recording media | |
JP4396885B2 (en) | Magnetron sputtering equipment | |
JP2004300465A (en) | Sputtering apparatus |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 19950821 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AT BE CH DE DK ES FR GB GR IE IT LI LU MC NL PT SE |
|
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: SEAGATE TECHNOLOGY, INC. |
|
A4 | Supplementary search report drawn up and despatched |
Effective date: 19970731 |
|
AK | Designated contracting states |
Kind code of ref document: A4 Designated state(s): AT BE CH DE DK ES FR GB GR IE IT LI LU MC NL PT SE |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20000901 |
|
REG | Reference to a national code |
Ref country code: HK Ref legal event code: WD Ref document number: 1006256 Country of ref document: HK |