EP0607441A1 - Abrading device and abrading method employing the same - Google Patents
Abrading device and abrading method employing the same Download PDFInfo
- Publication number
- EP0607441A1 EP0607441A1 EP93904297A EP93904297A EP0607441A1 EP 0607441 A1 EP0607441 A1 EP 0607441A1 EP 93904297 A EP93904297 A EP 93904297A EP 93904297 A EP93904297 A EP 93904297A EP 0607441 A1 EP0607441 A1 EP 0607441A1
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- EP
- European Patent Office
- Prior art keywords
- polishing
- sample
- elastic body
- face
- cloth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/12—Lapping plates for working plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
- B24B41/068—Table-like supports for panels, sheets or the like
Definitions
- the invention relates to a polishing apparatus for polishing a large flat substrate such as, particularly, a silicon wafer, a quartz substrate, a glass substrate, a ceramic substrate, a metal substrate, and a wafer under the production process of an LSI.
- Fig. 1 is a perspective view of a prior art polishing apparatus for polishing a large flat substrate.
- 1 is a disk-like polishing table which can horizontally be rotated by a rotating spindle 6.
- a polishing cloth 2 which is made of nonwoven fabric such as polyurethane is stuck by an adhesive 21.
- a disk-like sample holder 3 which is smaller than the polishing table 1 is located at a position above the polishing cloth 2 and separated therefrom by an adequate distance.
- the sample holder 3 can horizontally be rotated and moved by a sample holder rotary shaft 5 which is liftable and connected to a driving unit (not shown).
- a polishing reagent supply nozzle 7 for ejecting a polishing reagent 8 is fixed at a position which is at the side of the sample holder 3 and above the polishing table 1.
- a sample B is held to the lower face of the sample holder 3 by an adhesive or a vacuum chuck, and pressingly contacted to the polishing cloth 2 by a polishing load W. While supplying the polishing reagent 8 onto the polishing cloth 2 from the polishing reagent supply nozzle 7, the surface of the sample B is polished by rotating the polishing table 1 and by horizontally rotating and moving the sample holder 3.
- the polishing cloth 2 is made of nonwoven fabric such as polyurethane, it has a low elastic modulus so as to be easily deformed by a pressure. When a sample is polished by such a polishing apparatus, therefore, the surface of the polishing cloth 2 becomes uneven. To comply with this, an attempt in which a sheet having a thickness of about 0.5 mm is inserted between the polishing cloth 2 and the polishing table 1 has been made. Since the thickness of the polishing cloth 2 is uneven or that of the adhesive 21 is uneven, however, the contacting state between the face of the polishing cloth and the face of the sample to be polished is locally uneven, resulting in a reduced flatness of the face of the sample to be polished. Accordingly, this attempt has been proved not to be effective.
- the surface of the insulating film becomes irregular in accordance with the existence or nonexistence of the wiring patterns.
- the polishing must be conducted in a macroscopic view point so that the thickness of the insulating film becomes uniform, and in a microscopic view point so that the surface becomes flat.
- the elastic deformation of the polishing cloth causes the polishing cloth to deform along the irregularity of the surface of the insulating film, and thus the polishing is done on not only convex portions but also concave portions.
- Fig. 2 is a diagrammatic section view showing the contacting state between a soft polishing cloth and a wafer.
- Wirings 84, 84 ... are formed on a wafer substrate 81, and covered by an insulating film 83.
- a soft polishing cloth 82 elastically deforms so as to contact to and polish even concaved portions of the wafer surface, thereby requiring a prolonged time period for making the wafer surface flat (making the level difference of the irregularities zero). Therefore, it is required to increase the thickness of the insulating film as compared with a usual case. Practically, however, there is a limit to increase the thickness of an insulating film, and it is impossible to make the wafer surface completely flat. This produces a problem in that the flatness is low in a microscopic view point.
- FIG. 3 is a diagrammatic section view showing the contacting state between a very hard polishing cloth and a wafer. Wirings (not shown) are formed on a wafer substrate 81, and covered by an insulating film 83.
- a very hard polishing cloth 82 has a very high elastic modulus, the polishing cloth contacts to portions which are convex ones in a macroscopic view point, irrespective of the flatness of the wafer surface, and polishes only the contacting portions. Accordingly, the technique has a problem in that the insulating film 83 cannot be polished to a uniform thickness in a macroscopic view point.
- an elastic portion is interposed between a polishing table and a polishing cloth.
- an annular disk-like elastic body is interposed so that a face of the polishing cloth contacts a small area of a face of a sample to be polished. This allots the contacting state between the face of the polishing cloth and the face of the sample to be polished to become uniform. Therefore, a polishing is conducted without causing the face of the polishing cloth to apply an excessive load to the periphery portion of the sample.
- a disk-like elastic body one face of which is spherical is interposed in place of the annular disk-like elastic body. Accordingly, the center portion of the spherical face of the polishing cloth contacts to a face of a sample to be polished, so that the face of the polishing cloth does not apply an excessive load to the periphery portion of the sample, thereby allowing the contacting state between the face of the polishing cloth and the face of the sample to be polished to become uniform.
- a fluid encapsulating portion into which a fluid is encapsulated is interposed between a disk-like polishing table and a polishing cloth covering the polishing table.
- the fluid encapsulating portion has a disk-like shape one face of which is spherical, and only the center portion of the face of the polishing cloth contacts a face to be polished of a sample, so that the face of the polishing cloth does not apply an excessive load to the periphery portion of the sample, thereby allowing the contacting state between the face of the polishing cloth and the face of the sample to be polished to become uniform.
- the pressure in the fluid in the fluid encapsulating portion can be controlled so that the polishing is conducted with a contacting state corresponding to the sample.
- a sample-contacting face of a polishing cloth is structured so that resin pellets and/or polishing particles are embedded or attached to a second elastic body. Therefore, the surface of the polishing cloth can deform in accordance with the flatness of a sample in a macroscopic view point so that the surface of the sample is uniformly polished, and convex portions in a microscopic view point of the sample are polished, thereby improving the flatness.
- a sample-contacting face of a polishing cloth is structured so that convex portions, concave portions or groove portions are formed in a second elastic body. Therefore, the surface of the polishing cloth can deform in accordance with the flatness of a sample in a macroscopic view point so that convex portions in a microscopic view point of the sample are selectively polished.
- the above-mentioned elastic portion is interposed, and a sample-contacting face of a polishing cloth is structured so that resin pellets and/or polishing particles are embedded or attached to a second elastic body, or that convex portions, concave portions or groove portions are formed in the second elastic body. Therefore, the contact between the face of the sample to be polished and the polishing cloth becomes uniform, the surface of the sample is uniformly polished in a macroscopic view point, and convex portions are selectively polished in a microscopic view point, thereby improving the flatness.
- Fig. 1 is a perspective view showing the configuration of a prior art polishing apparatus.
- Fig. 2 is a diagrammatic section view showing one portion of the prior art polishing apparatus.
- Fig. 3 is a diagrammatic section view showing one portion of the prior art polishing apparatus.
- Fig. 4 is a front view showing, partly in section, a polishing apparatus which is a first embodiment of the invention.
- Fig. 5 is a diagrammatic section view showing one portion of a sample to be polished.
- Fig. 6 is a front view showing, partly in section, a polishing apparatus which is a second embodiment of the invention.
- Fig. 7 is a front view showing, partly in section, a polishing apparatus which is a third embodiment of the invention.
- Fig. 1 is a perspective view showing the configuration of a prior art polishing apparatus.
- Fig. 2 is a diagrammatic section view showing one portion of the prior art polishing apparatus.
- Fig. 3 is a diagrammatic section view showing one portion of the
- FIG. 8 is a diagrammatic section view showing one portion of a polishing apparatus which is a fourth embodiment of the invention.
- Fig. 9 is a diagrammatic section view showing one portion of a polishing apparatus which is a fifth embodiment of the invention.
- Fig. 10 is a graph showing level differences which were measured each time when a surface of a sample was polished by the polishing apparatus of the fourth embodiment.
- Fig. 4 is a front view showing, partly in section, a polishing apparatus of the invention.
- 1 is a disk-like polishing table
- 3 is a disk-like sample holder.
- the center of the upper face of the polishing table 1 is connected to a lower end portion of a rotating spindle 6 so as to be horizontally rotatable.
- the sample holder 3 mounted on a spindle 55 which can horizontally be rotated and moved.
- the spindle 55 is located at a position which is eccentric with respect to the polishing table 1.
- the rotation center of the spindle 55 can horizontally move in the direction from the periphery portion of a polishing cloth 2 and opposite to the center of the polishing table 1, by a distance which is approximately equal to the radius of a sample B.
- a concentric peripheral groove is formed on the lower face of the polishing table 1.
- an annular disk-like elastic body 201 having a thickness which is greater than the depth of the groove is fitted so as to protrude from the polishing table 1.
- a step portion into which a fixing ring 102 is fitted.
- the periphery portion of the polishing cloth 2 is sandwiched by fixing rings 102, 103, 103, ... and the center portion of the polishing cloth covers the lower face of the elastic body 201.
- the outer edge of the polishing table 1 is fixed by the fixing rings 102, 103 and bolts 104, 104 ... which pass through the polishing table 1.
- the tension of the polishing cloth 2 can be adjusted by bolts 104, 104 ....
- the center portion of the polishing cloth 2 is fixed to the polishing table 1 by a fixing plate 101 thinner than the thickness of the portion of the elastic body 201 a portion of which protrudes from the polishing table, in such a manner that a recess is formed.
- a polishing reagent supply nozzle 7 for ejecting a polishing reagent 8 is disposed in the vicinity of the center of the polishing cloth 2.
- a large size silicon wafer having a diameter of 8 inches is fixed onto the sample holder 3 by a vacuum chuck 4.
- polishing cloth 2 a mixture body of polyurethane resin and fibers is used. The tension is adjusted to a value at which the elastic body 201 deforms by about 0.1 mm.
- polishing reagent 8 in which ultrafine particles of SiO2 (average particle diameter: 0.1 ⁇ m to 0.2 ⁇ m) are suspended in a weak alkaline (from pH 10 to pH 12) liquid is supplied at 3 liters/min. to the face to be polished, the polishing table 1 is rotated at 2000 rpm, and the sample holder 3 onto which the sample B is mounted is rotated at 200 rpm.
- the sample holder 3 is moved to a position where the periphery portion of the polishing cloth 2 is perpendicularly above the rotation center of the sample holder.
- the polishing table 1 is lowered to a position where the polishing cloth 2 contacts the sample B.
- the contacting position is determined by detecting the output load of the motor for the rotating spindle 6 by which the polishing table 1 is rotated.
- the polishing table 1 is further pressingly lowered from the contacting position to a position where the elastic body 201 deforms by about 0.3 mm.
- the sample holder 3 on which the sample B is mounted is horizontally oscillated in the direction opposite to the center of the polishing table 1, by a distance which is approximately equal to the radius of the sample B, and the sample B is polished. In this polishing, the sample B can be uniformly polished.
- the periphery portion of the sample B can be more uniformly polished.
- a polishing may be conducted without pressingly lowering the polishing table 1 after the polishing table 1 contacts to the surface of the sample B.
- the rotation of the polishing table 1 and the sample holder 3 causes a water film of the polishing reagent 8 to be formed on the surface of the sample B.
- the elastic body 201 is deformed by the pressure of the water film so that a gap of several ⁇ m is formed between the face of the sample B to be polished and the surface of the polishing cloth 2.
- the presence of the gap allows a polishing to be conducted under a state where the face of the sample B to be polished is not contacted with the polishing cloth 2 or under that similar to the state. This method can more uniformly polish the face of the sample B to be polished than the above-described method.
- FIG. 5 is a diagrammatic section view showing the configuration of the sample B.
- a large size silicon wafer substrate 31 of a diameter of 8 inches has a flatness of 2 to 3 ⁇ m, and wirings 34, 34 ... are formed on the substrate.
- An insulating film 33 is deposited so as to cover the wirings.
- the film thickness distribution of the insulating film 33 is about 10 %, and the flatness of the sample B is 3 to 4 ⁇ m.
- the sample B is fixed onto the sample holder 3 by the vacuum chuck 4.
- the polishing reagent 8 in which ultrafine particles of SiO2 (average particle diameter: 0.1 ⁇ m to 0.2 ⁇ m) are suspended in a weak alkaline (from pH 10 to pH 12) liquid is supplied at 3 liters/min. to the face to be polished, the polishing table 1 is rotated at 2000 rpm, and the sample holder 3 onto which the sample B is mounted is rotated at 200 rpm.
- the polishing cloth 2 Since the polishing cloth 2 is hard and has a thickness equal to or less than 0.8 mm, the polishing cloth 2 and the elastic body 201 deform along irregularities in a macroscopic view point of the contacting face of the sample B, and the polishing cloth 2 does not deform along irregularities in a microscopic view point of the contacting face of the sample B. Therefore, a microscopic flattening can be efficiently conducted on the whole surface of the sample B.
- the thickness of the polishing cloth 2 is preferably set so that the change in the pressure of the polishing table 1 is not greater than 20 % with respect to the change of 3 to 4 ⁇ m in the deformation of the elastic body 201.
- the polishing cloth 2 may be of a material other than those described in the above embodiment, namely, a sheet of Teflon, nonwoven fabric, expanded polyurethane resin, resin including particles of an oxide such as selenium oxide or diamond particles, or the like.
- Fig. 6 is a front view showing, partly in section, a second embodiment of the invention.
- a polishing table 1 is connected at the center of the upper face to a lower end portion of a rotating spindle 6 so as to be horizontally rotatable.
- a sample holder 3 mounted on a spindle 55 which can horizontally be rotated and moved.
- the spindle 55 is located at a position which is concentric with respect to the polishing table 1, and can horizontally move in the direction from the center of a polishing cloth 2 toward the periphery direction, by a distance which is approximately equal to the radius of a sample.
- a recess having a concentric circular shape is formed on the lower face of the polishing table 1.
- a disk-like elastic body 202 one face of which is spherical is fitted.
- the thickness of the periphery portion of the elastic body is greater than the depth of the recess so that the elastic body 202 protrudes from the polishing table 1.
- a polishing cloth 2 is fixed so as to cover the elastic body 202.
- a sample B is firstly mounted on the sample holder 3. Then, the sample holder 3 is horizontally moved in the direction from the center of the polishing table 1 toward the periphery portion of the polishing table 1, by a distance which is approximately equal to the radius of the sample B, and the sample B is polished. In this polishing, the face of the sample B to be polished can be uniformly polished.
- the rotating spindle 6 for rotating the polishing table 1 is tilted by several deg. with respect to the perpendicular direction, it is possible to prevent the polishing cloth 2 from gathering to the point at which it contacts the sample B, thereby improving the abrasive resistance of the polishing cloth 2.
- Fig. 7 is a front view showing, partly in section, a third embodiment of the invention.
- 1 is a disk-like polishing table which is connected at the center of the upper face to a lower end portion of a rotating spindle 6 so as to be horizontally rotatable.
- a disk-like sample holder 3 for mounting a sample and mounted on a spindle 55 which can horizontally be rotated and moved.
- the spindle 55 is located at a position which is concentric with the polishing table 1.
- the rotation center of the spindle 55 can horizontally move in the direction from the center of a polishing cloth 2 toward the periphery portion, by at least a distance equal to the radius of the sample.
- a recess having a concentric circular shape is formed on the lower face of the polishing table 1.
- the periphery portion of the polishing cloth 2 is fixed to the lower portion of the polishing table 1 by fixing rings 102, 103, 103, ... and bolts 104, 104 ...
- An encapsulating bag 9 is loosely inserted between the polishing table 1 and the polishing cloth 2.
- a supply duct 10 for supplying a liquid 203 to the encapsulating bag 9 passes through the center portion of the rotating spindle 6, and is attached to the center portion of the upper face of the encapsulating bag 9.
- the liquid 203 is poured through the supply duct 10 into the encapsulating bag 9, so that the fluid encapsulating portion having a spherical shape is formed between the polishing table 1 and the polishing cloth 2.
- a polishing reagent supply nozzle 7 for ejecting a polishing reagent 8 is disposed in the vicinity of the center of the polishing cloth 2.
- the sample holder 3 is moved to a position where the rotary shaft of the sample holder 3 and that of the polishing table 1 are on the same perpendicular line, and their rotations are started to conduct a polishing.
- positions of the face of the sample B to be polished are pressed by a substantially constant pressure, and hence can be uniformly polished.
- a polishing may be conducted while fixing the sample holder 3 at a position where the polishing table 1 and the rotary shaft are coincident as described above.
- a polishing may be conducted while moving the sample holder 3 in a radial direction of the sample.
- a liquid is encapsulated into the encapsulating bag 9.
- a gas may be encapsulated into the encapsulating bag.
- Fig. 8 is a diagrammatic section view showing one portion of a polishing apparatus which is a fourth embodiment of the invention. More specifically, Fig. 8 is a section view showing on an enlarged scale the polishing cloth 2, the annular disk-like elastic body 201 and the sample B of the polishing apparatus of Fig. 4 which is the first embodiment described above. As shown in Fig. 8(a), the polishing cloth 2 has a configuration where resin pellets 205, 205 ... are embedded in a surface of a second elastic body 204 such as flexible urethane rubber a surface of which contacts the sample B.
- the elastic body 201 made of chloroprene rubber is interposed between the polishing cloth 2 and the polishing table 1 (Fig. 4).
- the resin pellets 205, 205 ... pellets made of polyvinyl chloride or polyethylene and having a spherical shape of a diameter of 0.3 mm are used.
- the sample B has a configuration where wirings 54, 54 ... and an insulating film 53 are formed on a silicon wafer 51.
- the insulating film 53 on the surface is polished.
- the surface of the sample B is irregular because of the wirings 54, 54 of the polishing cloth 2 selectively polish convex portions of the insulating film 53, and do not contact concave portions. This improves the flatness of the sample B in a microscopic view point.
- Fig. 8(b) is a diagrammatic section view showing in a macroscopic view point the polishing cloth 2, the annular disk-like elastic body 201 and the sample B shown in Fig. 8(a).
- the resin pellets 205, 205 ... and the wirings 54, 54 ... are omitted.
- the second elastic body 204 of the polishing cloth 2 elastically deforms so that the shape of the polishing cloth 2 deforms along the shape of the surface of the sample B in a macroscopic view point, whereby the degree of the polishing on the surface of the sample B is uniformalized.
- the resin pellets are harder than the second elastic body, and spherical pellets made of polyvinyl chloride or polyethylene and having a diameter of 0.3 mm are used.
- the invention is not restricted to this.
- the resin pellets may be those in which polyvinyl chloride, polyethylene or the like contains particles such as Al2O3, CeO2 or diamond of a particle diameter of 1.0 ⁇ m or less.
- the resin pellets 205, 205 ... of the polishing cloth 2 are embedded in the surface of the second elastic body 204 in the side of the sample B.
- the resin pellets may be fixed and attached to an adhesive face formed on a surface of, for example, the second elastic body 204 in the side of the sample B.
- Fig. 9 is a diagrammatic section view showing one portion of a polishing apparatus which is a fifth embodiment of the invention. More specifically, Fig. 9 is a section view showing on an enlarged scale the polishing cloth 2, the annular disk-like elastic body 201 and the sample B of the polishing apparatus of Fig. 4 which is the first embodiment described above. As shown in Fig. 9, the polishing cloth 2 has a configuration where concave portions 206a, 206a ... are formed in the side of a second elastic body 206 which contacts to the sample B.
- the second elastic body 206 is a pad of a thickness of 1.5 mm which may be formed by, for example, impregnating urethane rubber into nonwoven fabric and hardening it.
- the sample B has a configuration where wirings 54, 54 ... and an insulating film 53 are formed on a silicon wafer 51. While a polishing reagent 8 in which ultrafine particles of SiO2 (average particle diameter: about 0.05 ⁇ m to 0.2 ⁇ m) are suspended in a weak alkaline (from pH 10 to pH 12) liquid is supplied at 3 liters/min. to the face to be polished, a polishing table 1 is rotated at 2000 rpm, and a sample holder 3 onto which the sample B is mounted is rotated at 200 rpm.
- a polishing reagent 8 in which ultrafine particles of SiO2 (average particle diameter: about 0.05 ⁇ m to 0.2 ⁇ m) are suspended in a weak alkaline (from pH 10 to pH 12) liquid is supplied at 3 liters/min. to the face to be polished, a polishing table 1 is rotated at 2000 rpm, and a sample holder 3 onto which the sample B is mounted is rotated at 200 rpm
- a polishing is conducted in the same manner as the above-described first embodiment.
- the second elastic body 206 of the polishing cloth 2 since the second elastic body 206 of the polishing cloth 2 is hard, it does not follow microscopic irregularities, and therefore the flatness of the sample B in a microscopic view point is improved. Since the concave portions 206a, 206a ... of the polishing cloth 2 are formed, the shape of the polishing cloth 2 deforms along the shape of the surface of the sample B, whereby the degree of the polishing on the surface of the sample B is uniformalized in a macroscopic view point.
- the openings of the concave portions formed in the second elastic body 206 of the polishing cloth 2 used in embodiment 5 described above have the size of 0.1 mm ⁇ 0.1 mm.
- the invention is not restricted to this.
- the concave portions may be groove-like ones.
- convex portions may be formed in the surface of the second elastic body 206 in the side of the sample B.
- Fig. 10 is a graph showing level differences measured each time when a surface of a sample was polished by the polishing apparatus one portion of which is shown in Fig. 8(a).
- the ordinate indicates the level difference of the surface
- the abscissa indicates the position (size) of wiring patterns.
- an annular disk-like elastic body, a disk-like elastic body one face of which is spherical, or a fluid is interposed between a polishing table and a polishing cloth. Therefore, the contacting state between the face of the polishing cloth and a face of a sample to be polished becomes uniform, so that the flatness of the sample can be improved. Moreover, since the pressure of the fluid can be controlled, the invention has an effect that the pressing force of the face of the polishing cloth against the face of the sample to be polished can easily be controlled.
- a gap is formed between the face of the polishing cloth and a face of a sample to be polished, and a polishing is conducted while supplying a polishing reagent into the gap. Therefore, the invention has effects that a load applied to the sample is reduced, that the smoothness of the sample is improved, and that a polishing distortion is reduced.
- the polishing cloth is provided with a second elastic body, and resin pellets and/or polishing particles are embedded or attached to the sample-contacting face of the elastic body. Therefore, a sample can be polished so as to have a thickness which is uniform in a macroscopic view point, and the flatness in a microscopic view point of the face of the sample to be polished can be improved.
- the use of the polishing cloth of a second elastic body in which convex portions, concave portions or groove portions are formed on the sample-contacting face provides effects that a sample can be polished so as to have a thickness which is uniform in a macroscopic view point, and that the flatness in a microscopic view point of the face of the sample to be polished can be improved.
- an elastic portion is interposed between a polishing table and a polishing cloth, and further the polishing cloth is provided with a second elastic body, thereby attaining an effect that the flatness of a sample can be further improved.
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Abstract
Description
- The invention relates to a polishing apparatus for polishing a large flat substrate such as, particularly, a silicon wafer, a quartz substrate, a glass substrate, a ceramic substrate, a metal substrate, and a wafer under the production process of an LSI.
- Fig. 1 is a perspective view of a prior art polishing apparatus for polishing a large flat substrate. In the figure, 1 is a disk-like polishing table which can horizontally be rotated by a rotating
spindle 6. Onto its surface, apolishing cloth 2 which is made of nonwoven fabric such as polyurethane is stuck by an adhesive 21. A disk-like sample holder 3 which is smaller than the polishing table 1 is located at a position above thepolishing cloth 2 and separated therefrom by an adequate distance. Thesample holder 3 can horizontally be rotated and moved by a sample holderrotary shaft 5 which is liftable and connected to a driving unit (not shown). - A polishing
reagent supply nozzle 7 for ejecting apolishing reagent 8 is fixed at a position which is at the side of thesample holder 3 and above the polishing table 1. A sample B is held to the lower face of thesample holder 3 by an adhesive or a vacuum chuck, and pressingly contacted to thepolishing cloth 2 by a polishing load W. While supplying thepolishing reagent 8 onto thepolishing cloth 2 from the polishingreagent supply nozzle 7, the surface of the sample B is polished by rotating the polishing table 1 and by horizontally rotating and moving thesample holder 3. - Since the
polishing cloth 2 is made of nonwoven fabric such as polyurethane, it has a low elastic modulus so as to be easily deformed by a pressure. When a sample is polished by such a polishing apparatus, therefore, the surface of thepolishing cloth 2 becomes uneven. To comply with this, an attempt in which a sheet having a thickness of about 0.5 mm is inserted between thepolishing cloth 2 and the polishing table 1 has been made. Since the thickness of thepolishing cloth 2 is uneven or that of theadhesive 21 is uneven, however, the contacting state between the face of the polishing cloth and the face of the sample to be polished is locally uneven, resulting in a reduced flatness of the face of the sample to be polished. Accordingly, this attempt has been proved not to be effective. - Furthermore, there is a problem in that, since the whole face of the sample to be polished is contacted with the face of the polishing cloth, the periphery portion of the sample is more easily polished than the inner periphery portion and therefore the face of the sample to be polished cannot uniformly be polished. In the case where the load W applied to the sample B is increased so that the contacting state between the face of the polishing cloth and the face of the sample to be polished is uniformalized, there arises a problem in that scratches (scratched portions) are formed on the face to be polished or a polishing distortion is developed, whereby the original properties of the sample are damaged.
- When wiring patterns are formed on a wafer substrate in a production process of an LSI and an insulating film is formed to cover the entire surface of the wafer, the surface of the insulating film becomes irregular in accordance with the existence or nonexistence of the wiring patterns. In the case where the insulating film of such a wafer is to be polished, the polishing must be conducted in a macroscopic view point so that the thickness of the insulating film becomes uniform, and in a microscopic view point so that the surface becomes flat. When a soft polishing cloth is used in a prior art polishing apparatus, the elastic deformation of the polishing cloth causes the polishing cloth to deform along the irregularity of the surface of the insulating film, and thus the polishing is done on not only convex portions but also concave portions.
- Fig. 2 is a diagrammatic section view showing the contacting state between a soft polishing cloth and a wafer.
Wirings wafer substrate 81, and covered by aninsulating film 83. In the case where the surface of such a wafer is to be polished, asoft polishing cloth 82 elastically deforms so as to contact to and polish even concaved portions of the wafer surface, thereby requiring a prolonged time period for making the wafer surface flat (making the level difference of the irregularities zero). Therefore, it is required to increase the thickness of the insulating film as compared with a usual case. Practically, however, there is a limit to increase the thickness of an insulating film, and it is impossible to make the wafer surface completely flat. This produces a problem in that the flatness is low in a microscopic view point. - As a counter measure, a technique in which a very hard polishing cloth may be used in place of a soft polishing cloth may be employed. Fig. 3 is a diagrammatic section view showing the contacting state between a very hard polishing cloth and a wafer. Wirings (not shown) are formed on a
wafer substrate 81, and covered by aninsulating film 83. In the case where the surface of such a wafer is to be polished, since a veryhard polishing cloth 82 has a very high elastic modulus, the polishing cloth contacts to portions which are convex ones in a macroscopic view point, irrespective of the flatness of the wafer surface, and polishes only the contacting portions. Accordingly, the technique has a problem in that theinsulating film 83 cannot be polished to a uniform thickness in a macroscopic view point. - It is an object of the invention to uniformalize a contacting state between a face of a polishing cloth and a face of a sample to be polished, thereby improving a uniform polishing and flatness of the sample, and to provide a polishing apparatus and a polishing method using it in which a load applied to the sample is reduced, the smoothness of the sample is improved, and a polishing distortion is reduced.
- It is another object of the invention to provide a polishing apparatus and a polishing method using it in which, in a macroscopic view point, a uniform polishing is conducted along a surface of a sample, and, in a microscopic view point, the flatness is improved.
- In a polishing apparatus of the invention and a polishing method using the apparatus, an elastic portion is interposed between a polishing table and a polishing cloth. As the elastic portion, an annular disk-like elastic body is interposed so that a face of the polishing cloth contacts a small area of a face of a sample to be polished. This allots the contacting state between the face of the polishing cloth and the face of the sample to be polished to become uniform. Therefore, a polishing is conducted without causing the face of the polishing cloth to apply an excessive load to the periphery portion of the sample.
- In another polishing apparatus of the invention and a polishing method using the apparatus, a disk-like elastic body one face of which is spherical is interposed in place of the annular disk-like elastic body. Accordingly, the center portion of the spherical face of the polishing cloth contacts to a face of a sample to be polished, so that the face of the polishing cloth does not apply an excessive load to the periphery portion of the sample, thereby allowing the contacting state between the face of the polishing cloth and the face of the sample to be polished to become uniform.
- In a further polishing apparatus of the invention and a polishing method using the apparatus, similarly, a fluid encapsulating portion into which a fluid is encapsulated is interposed between a disk-like polishing table and a polishing cloth covering the polishing table. Accordingly, the fluid encapsulating portion has a disk-like shape one face of which is spherical, and only the center portion of the face of the polishing cloth contacts a face to be polished of a sample, so that the face of the polishing cloth does not apply an excessive load to the periphery portion of the sample, thereby allowing the contacting state between the face of the polishing cloth and the face of the sample to be polished to become uniform. Furthermore, the pressure in the fluid in the fluid encapsulating portion can be controlled so that the polishing is conducted with a contacting state corresponding to the sample.
- In a still further polishing apparatus of the invention and a polishing method using the apparatus, a sample-contacting face of a polishing cloth is structured so that resin pellets and/or polishing particles are embedded or attached to a second elastic body. Therefore, the surface of the polishing cloth can deform in accordance with the flatness of a sample in a macroscopic view point so that the surface of the sample is uniformly polished, and convex portions in a microscopic view point of the sample are polished, thereby improving the flatness.
- In a still further polishing apparatus of the invention and a polishing method using the apparatus, a sample-contacting face of a polishing cloth is structured so that convex portions, concave portions or groove portions are formed in a second elastic body. Therefore, the surface of the polishing cloth can deform in accordance with the flatness of a sample in a macroscopic view point so that convex portions in a microscopic view point of the sample are selectively polished.
- In a still further polishing apparatus of the invention and a polishing method using the apparatus, the above-mentioned elastic portion is interposed, and a sample-contacting face of a polishing cloth is structured so that resin pellets and/or polishing particles are embedded or attached to a second elastic body, or that convex portions, concave portions or groove portions are formed in the second elastic body. Therefore, the contact between the face of the sample to be polished and the polishing cloth becomes uniform, the surface of the sample is uniformly polished in a macroscopic view point, and convex portions are selectively polished in a microscopic view point, thereby improving the flatness.
- Fig. 1 is a perspective view showing the configuration of a prior art polishing apparatus. Fig. 2 is a diagrammatic section view showing one portion of the prior art polishing apparatus. Fig. 3 is a diagrammatic section view showing one portion of the prior art polishing apparatus. Fig. 4 is a front view showing, partly in section, a polishing apparatus which is a first embodiment of the invention. Fig. 5 is a diagrammatic section view showing one portion of a sample to be polished. Fig. 6 is a front view showing, partly in section, a polishing apparatus which is a second embodiment of the invention. Fig. 7 is a front view showing, partly in section, a polishing apparatus which is a third embodiment of the invention. Fig. 8 is a diagrammatic section view showing one portion of a polishing apparatus which is a fourth embodiment of the invention. Fig. 9 is a diagrammatic section view showing one portion of a polishing apparatus which is a fifth embodiment of the invention. Fig. 10 is a graph showing level differences which were measured each time when a surface of a sample was polished by the polishing apparatus of the fourth embodiment.
- Hereinafter, the invention will be described with reference to the drawings showing its first embodiment. Fig. 4 is a front view showing, partly in section, a polishing apparatus of the invention.
- In the figure, 1 is a disk-like polishing table, and 3 is a disk-like sample holder. The center of the upper face of the polishing table 1 is connected to a lower end portion of a rotating
spindle 6 so as to be horizontally rotatable. - Below the polishing table 1, disposed is the
sample holder 3 mounted on aspindle 55 which can horizontally be rotated and moved. Thespindle 55 is located at a position which is eccentric with respect to the polishing table 1. The rotation center of thespindle 55 can horizontally move in the direction from the periphery portion of a polishingcloth 2 and opposite to the center of the polishing table 1, by a distance which is approximately equal to the radius of a sample B. - On the lower face of the polishing table 1, a concentric peripheral groove is formed. Into the peripheral groove, an annular disk-like
elastic body 201 having a thickness which is greater than the depth of the groove is fitted so as to protrude from the polishing table 1. On the lower face of the outer edge of the polishing table 1, formed is a step portion into which afixing ring 102 is fitted. The periphery portion of the polishingcloth 2 is sandwiched by fixingrings elastic body 201. The outer edge of the polishing table 1 is fixed by the fixing rings 102, 103 andbolts cloth 2 can be adjusted bybolts - The center portion of the polishing
cloth 2 is fixed to the polishing table 1 by a fixingplate 101 thinner than the thickness of the portion of the elastic body 201 a portion of which protrudes from the polishing table, in such a manner that a recess is formed. A polishingreagent supply nozzle 7 for ejecting a polishingreagent 8 is disposed in the vicinity of the center of the polishingcloth 2. - Hereinafter, an example of specific conditions of conducting a polishing using this apparatus will be described.
- As the sample B, a large size silicon wafer having a diameter of 8 inches is fixed onto the
sample holder 3 by avacuum chuck 4. As theelastic body 201, chloroprene rubber (thickness: about 15 mm to 20 mm, HS = 65, and tensile strength: 80 kg/cm²) is used, and, as the polishingcloth 2, a mixture body of polyurethane resin and fibers is used. The tension is adjusted to a value at which theelastic body 201 deforms by about 0.1 mm. First, while the polishingreagent 8 in which ultrafine particles of SiO₂ (average particle diameter: 0.1 µm to 0.2 µm) are suspended in a weak alkaline (frompH 10 to pH 12) liquid is supplied at 3 liters/min. to the face to be polished, the polishing table 1 is rotated at 2000 rpm, and thesample holder 3 onto which the sample B is mounted is rotated at 200 rpm. - Then, the
sample holder 3 is moved to a position where the periphery portion of the polishingcloth 2 is perpendicularly above the rotation center of the sample holder. The polishing table 1 is lowered to a position where the polishingcloth 2 contacts the sample B. The contacting position is determined by detecting the output load of the motor for therotating spindle 6 by which the polishing table 1 is rotated. - The polishing table 1 is further pressingly lowered from the contacting position to a position where the
elastic body 201 deforms by about 0.3 mm. Thesample holder 3 on which the sample B is mounted is horizontally oscillated in the direction opposite to the center of the polishing table 1, by a distance which is approximately equal to the radius of the sample B, and the sample B is polished. In this polishing, the sample B can be uniformly polished. - When a polishing is conducted while the
rotating spindle 6 for rotating the polishing table 1 is tilted by several deg. with respect to the perpendicular direction, the periphery portion of the sample B can be more uniformly polished. - Unlike the above-described method, a polishing may be conducted without pressingly lowering the polishing table 1 after the polishing table 1 contacts to the surface of the sample B. In this case, the rotation of the polishing table 1 and the
sample holder 3 causes a water film of the polishingreagent 8 to be formed on the surface of the sample B. Theelastic body 201 is deformed by the pressure of the water film so that a gap of several µm is formed between the face of the sample B to be polished and the surface of the polishingcloth 2. The presence of the gap allows a polishing to be conducted under a state where the face of the sample B to be polished is not contacted with the polishingcloth 2 or under that similar to the state. This method can more uniformly polish the face of the sample B to be polished than the above-described method. - A method of conducting a polishing with using the above-described apparatus and in the case where the sample B is a wafer having a silicon wafer substrate on which wirings and an insulating film are previously formed will be described. Fig. 5 is a diagrammatic section view showing the configuration of the sample B. A large size
silicon wafer substrate 31 of a diameter of 8 inches has a flatness of 2 to 3 µm, and wirings 34, 34 ... are formed on the substrate. An insulating film 33 is deposited so as to cover the wirings. The film thickness distribution of the insulating film 33 is about 10 %, and the flatness of the sample B is 3 to 4 µm. The sample B is fixed onto thesample holder 3 by thevacuum chuck 4. As theelastic body 201, silicone rubber (thickness: about 15 mm to 20 mm, HS = 55, and tensile strength: 80 kg/cm²) is used, and, as the polishingcloth 2, a mixture body of polyurethane resin and fibers is used. The tension is adjusted to a value at which theelastic body 201 deforms by about 0.1 mm. The thickness of the polishingcloth 2 is not greater than 0.8 mm, and, if possible, not greater than 0.5 mm. First, while the polishingreagent 8 in which ultrafine particles of SiO₂ (average particle diameter: 0.1 µm to 0.2 µm) are suspended in a weak alkaline (frompH 10 to pH 12) liquid is supplied at 3 liters/min. to the face to be polished, the polishing table 1 is rotated at 2000 rpm, and thesample holder 3 onto which the sample B is mounted is rotated at 200 rpm. - Since the polishing
cloth 2 is hard and has a thickness equal to or less than 0.8 mm, the polishingcloth 2 and theelastic body 201 deform along irregularities in a macroscopic view point of the contacting face of the sample B, and the polishingcloth 2 does not deform along irregularities in a microscopic view point of the contacting face of the sample B. Therefore, a microscopic flattening can be efficiently conducted on the whole surface of the sample B. - In a case where the polishing
cloth 2 is made of a soft material such as sponge of chloroprene, the thickness of the polishingcloth 2 is preferably set so that the change in the pressure of the polishing table 1 is not greater than 20 % with respect to the change of 3 to 4 µm in the deformation of theelastic body 201. - The polishing
cloth 2 may be of a material other than those described in the above embodiment, namely, a sheet of Teflon, nonwoven fabric, expanded polyurethane resin, resin including particles of an oxide such as selenium oxide or diamond particles, or the like. - Fig. 6 is a front view showing, partly in section, a second embodiment of the invention. A polishing table 1 is connected at the center of the upper face to a lower end portion of a
rotating spindle 6 so as to be horizontally rotatable. Below the polishing table 1, disposed is asample holder 3 mounted on aspindle 55 which can horizontally be rotated and moved. Thespindle 55 is located at a position which is concentric with respect to the polishing table 1, and can horizontally move in the direction from the center of a polishingcloth 2 toward the periphery direction, by a distance which is approximately equal to the radius of a sample. - On the lower face of the polishing table 1, a recess having a concentric circular shape is formed. Into the recess, a disk-like
elastic body 202 one face of which is spherical is fitted. The thickness of the periphery portion of the elastic body is greater than the depth of the recess so that theelastic body 202 protrudes from the polishing table 1. - In the same manner as the first embodiment, a polishing
cloth 2 is fixed so as to cover theelastic body 202. When a polishing is to be conducted using this apparatus, a sample B is firstly mounted on thesample holder 3. Then, thesample holder 3 is horizontally moved in the direction from the center of the polishing table 1 toward the periphery portion of the polishing table 1, by a distance which is approximately equal to the radius of the sample B, and the sample B is polished. In this polishing, the face of the sample B to be polished can be uniformly polished. When a polishing is conducted while therotating spindle 6 for rotating the polishing table 1 is tilted by several deg. with respect to the perpendicular direction, it is possible to prevent the polishingcloth 2 from gathering to the point at which it contacts the sample B, thereby improving the abrasive resistance of the polishingcloth 2. - Fig. 7 is a front view showing, partly in section, a third embodiment of the invention.
- In the figure, 1 is a disk-like polishing table which is connected at the center of the upper face to a lower end portion of a
rotating spindle 6 so as to be horizontally rotatable. Below the polishing table 1, disposed is a disk-like sample holder 3 for mounting a sample and mounted on aspindle 55 which can horizontally be rotated and moved. Thespindle 55 is located at a position which is concentric with the polishing table 1. The rotation center of thespindle 55 can horizontally move in the direction from the center of a polishingcloth 2 toward the periphery portion, by at least a distance equal to the radius of the sample. - On the lower face of the polishing table 1, a recess having a concentric circular shape is formed. In the same manner as the first embodiment, the periphery portion of the polishing
cloth 2 is fixed to the lower portion of the polishing table 1 by fixingrings bolts bag 9 is loosely inserted between the polishing table 1 and the polishingcloth 2. Asupply duct 10 for supplying a liquid 203 to the encapsulatingbag 9 passes through the center portion of therotating spindle 6, and is attached to the center portion of the upper face of the encapsulatingbag 9. - The liquid 203 is poured through the
supply duct 10 into the encapsulatingbag 9, so that the fluid encapsulating portion having a spherical shape is formed between the polishing table 1 and the polishingcloth 2. A polishingreagent supply nozzle 7 for ejecting a polishingreagent 8 is disposed in the vicinity of the center of the polishingcloth 2. When a polishing is to be conducted using this apparatus, a sample B is firstly mounted on thesample holder 3. Then, using a constant-pressure pump (not shown), the liquid 203 is poured through thesupply duct 10 into the encapsulatingbag 9, whereby the pressure of the liquid 203 in the encapsulatingbag 9 can be adjusted. At this time, the shape of the fluid encapsulating portion causes the lower face of the polishingcloth 2 to become substantially spherical. - Then, the
sample holder 3 is moved to a position where the rotary shaft of thesample holder 3 and that of the polishing table 1 are on the same perpendicular line, and their rotations are started to conduct a polishing. In this way, positions of the face of the sample B to be polished are pressed by a substantially constant pressure, and hence can be uniformly polished. A polishing may be conducted while fixing thesample holder 3 at a position where the polishing table 1 and the rotary shaft are coincident as described above. Alternatively, a polishing may be conducted while moving thesample holder 3 in a radial direction of the sample. - In the embodiment, a liquid is encapsulated into the encapsulating
bag 9. Alternatively, in place of a liquid, a gas may be encapsulated into the encapsulating bag. - Fig. 8 is a diagrammatic section view showing one portion of a polishing apparatus which is a fourth embodiment of the invention. More specifically, Fig. 8 is a section view showing on an enlarged scale the polishing
cloth 2, the annular disk-likeelastic body 201 and the sample B of the polishing apparatus of Fig. 4 which is the first embodiment described above. As shown in Fig. 8(a), the polishingcloth 2 has a configuration whereresin pellets elastic body 204 such as flexible urethane rubber a surface of which contacts the sample B. Theelastic body 201 made of chloroprene rubber is interposed between the polishingcloth 2 and the polishing table 1 (Fig. 4). As theresin pellets wirings film 53 are formed on asilicon wafer 51. When a polishing similar to that of the first embodiment described above is conducted, the insulatingfilm 53 on the surface is polished. The surface of the sample B is irregular because of thewirings cloth 2 selectively polish convex portions of the insulatingfilm 53, and do not contact concave portions. This improves the flatness of the sample B in a microscopic view point. - Fig. 8(b) is a diagrammatic section view showing in a macroscopic view point the polishing
cloth 2, the annular disk-likeelastic body 201 and the sample B shown in Fig. 8(a). Theresin pellets wirings elastic body 204 of the polishingcloth 2 elastically deforms so that the shape of the polishingcloth 2 deforms along the shape of the surface of the sample B in a macroscopic view point, whereby the degree of the polishing on the surface of the sample B is uniformalized. - Preferably, the resin pellets are harder than the second elastic body, and spherical pellets made of polyvinyl chloride or polyethylene and having a diameter of 0.3 mm are used. The invention is not restricted to this. The resin pellets may be those in which polyvinyl chloride, polyethylene or the like contains particles such as Al₂O₃, CeO₂ or diamond of a particle diameter of 1.0 µm or less.
- In the fourth embodiment described above, the
resin pellets cloth 2 are embedded in the surface of the secondelastic body 204 in the side of the sample B. Alternatively, the resin pellets may be fixed and attached to an adhesive face formed on a surface of, for example, the secondelastic body 204 in the side of the sample B. - Next, Fig. 9 is a diagrammatic section view showing one portion of a polishing apparatus which is a fifth embodiment of the invention. More specifically, Fig. 9 is a section view showing on an enlarged scale the polishing
cloth 2, the annular disk-likeelastic body 201 and the sample B of the polishing apparatus of Fig. 4 which is the first embodiment described above. As shown in Fig. 9, the polishingcloth 2 has a configuration where concave portions 206a, 206a ... are formed in the side of a secondelastic body 206 which contacts to the sample B. The secondelastic body 206 is a pad of a thickness of 1.5 mm which may be formed by, for example, impregnating urethane rubber into nonwoven fabric and hardening it. Therein the concave portions 206a, 206a 1.4 mm are arranged at a pitch of 1.5 mm. The sample B has a configuration wherewirings film 53 are formed on asilicon wafer 51. While a polishingreagent 8 in which ultrafine particles of SiO₂ (average particle diameter: about 0.05 µm to 0.2 µm) are suspended in a weak alkaline (frompH 10 to pH 12) liquid is supplied at 3 liters/min. to the face to be polished, a polishing table 1 is rotated at 2000 rpm, and asample holder 3 onto which the sample B is mounted is rotated at 200 rpm. Then, a polishing is conducted in the same manner as the above-described first embodiment. In this case, since the secondelastic body 206 of the polishingcloth 2 is hard, it does not follow microscopic irregularities, and therefore the flatness of the sample B in a microscopic view point is improved. Since the concave portions 206a, 206a ... of the polishingcloth 2 are formed, the shape of the polishingcloth 2 deforms along the shape of the surface of the sample B, whereby the degree of the polishing on the surface of the sample B is uniformalized in a macroscopic view point. - The openings of the concave portions formed in the second
elastic body 206 of the polishingcloth 2 used inembodiment 5 described above have the size of 0.1 mm × 0.1 mm. The invention is not restricted to this. The concave portions may be groove-like ones. Alternatively, convex portions may be formed in the surface of the secondelastic body 206 in the side of the sample B. - Next, results are shown that were obtained by polishing a wafer on which an SiO₂ film was deposited, using the above-described apparatus of the fourth embodiment, and measuring the flatness. Fig. 10 is a graph showing level differences measured each time when a surface of a sample was polished by the polishing apparatus one portion of which is shown in Fig. 8(a). The ordinate indicates the level difference of the surface, and the abscissa indicates the position (size) of wiring patterns. As apparent from the graph, it will be noted that the level difference of about 2 µm before a polishing is decreased to 0.5 µm with the increase of the number of polishing processes, and the flatness is improved.
-
- As described above, according to the invention, an annular disk-like elastic body, a disk-like elastic body one face of which is spherical, or a fluid is interposed between a polishing table and a polishing cloth. Therefore, the contacting state between the face of the polishing cloth and a face of a sample to be polished becomes uniform, so that the flatness of the sample can be improved. Moreover, since the pressure of the fluid can be controlled, the invention has an effect that the pressing force of the face of the polishing cloth against the face of the sample to be polished can easily be controlled.
- Furthermore, according to the invention, a gap is formed between the face of the polishing cloth and a face of a sample to be polished, and a polishing is conducted while supplying a polishing reagent into the gap. Therefore, the invention has effects that a load applied to the sample is reduced, that the smoothness of the sample is improved, and that a polishing distortion is reduced.
- Furthermore, according to the invention, the polishing cloth is provided with a second elastic body, and resin pellets and/or polishing particles are embedded or attached to the sample-contacting face of the elastic body. Therefore, a sample can be polished so as to have a thickness which is uniform in a macroscopic view point, and the flatness in a microscopic view point of the face of the sample to be polished can be improved. Moreover, the use of the polishing cloth of a second elastic body in which convex portions, concave portions or groove portions are formed on the sample-contacting face provides effects that a sample can be polished so as to have a thickness which is uniform in a macroscopic view point, and that the flatness in a microscopic view point of the face of the sample to be polished can be improved.
- Furthermore, according to the invention, an elastic portion is interposed between a polishing table and a polishing cloth, and further the polishing cloth is provided with a second elastic body, thereby attaining an effect that the flatness of a sample can be further improved.
Claims (18)
- A polishing apparatus wherein a polishing reagent is supplied between a flat plate-like sample which is held to a rotating sample holder, and a polishing cloth which covers a rotating polishing table, and said flat plate-like sample is polished, characterized in that an elastic portion is interposed between said polishing table and said polishing cloth.
- A polishing apparatus according to claim 1, characterized in that said elastic portion is an annular plate-like elastic body.
- A polishing apparatus according to claim 1, characterized in that said elastic portion is a disk-like elastic body having one face which is spherical, and said spherical face is interposed in the side of said polishing cloth.
- A polishing apparatus according to claim 1, characterized in that said elastic portion is a fluid encapsulating portion into which a fluid is encapsulated.
- A polishing apparatus according to claim 4, characterized in that said apparatus further comprises means for controlling a pressure of the fluid of said fluid encapsulating portion.
- A polishing apparatus wherein a polishing reagent is supplied between a flat plate-like sample which is held to a rotating sample holder, and a polishing cloth which covers a rotating polishing table, and said flat plate-like sample is polished, characterized in that said polishing cloth has a second elastic body at a sample-contacting face, resin pellets and/or polishing particles being embedded in or attached to said second elastic body.
- A polishing apparatus wherein a polishing reagent is supplied between a flat plate-like sample which is held to a rotating sample holder, and a polishing cloth which covers a rotating polishing table, and said flat plate-like sample is polished, characterized in that said polishing cloth has a second elastic body at a sample-contacting face, convex portions, concave portions or groove portions being formed in said second elastic body.
- A polishing apparatus according to claim 2, 3, 4 or 5, characterized in that said polishing cloth has a second elastic body at a sample-contacting face, resin pellets and/or polishing particles being embedded in or attached to said second elastic body.
- A polishing apparatus according to claim 2, 3, 4 or 5, characterized in that said polishing cloth has a second elastic body at a sample-contacting face, convex portions, concave portions or groove portions being formed in said second elastic body.
- A polishing method characterized in that the polishing apparatus according to claim 1 is used, and said polishing table and said sample holder are rotated independently from each other, thereby polishing said flat plate-like sample.
- A polishing method according to claim 10, characterized in that said elastic portion is an annular plate-like elastic body.
- A polishing method according to claim 10, characterized in that said elastic portion is a disk-like elastic body having one face which is spherical, and said spherical face is interposed in the side of said polishing cloth.
- A polishing method according to claim 10, characterized in that said elastic portion is a fluid encapsulating portion into which a fluid is encapsulated.
- A polishing method according to claim 13, characterized in that means for controlling a pressure of the fluid in said fluid encapsulating portion is further provided.
- A polishing method characterized in that the polishing apparatus according to claim 6 is used, and said polishing table and said sample holder are rotated independently from each other, thereby polishing the flat plate-like sample.
- A polishing method characterized in that the polishing apparatus according to claim 7 is used, and said polishing table and said sample holder are rotated independently from each other, thereby polishing the flat plate-like sample.
- A polishing method according to claim 11, 12, 13 or 14, characterized in that said polishing cloth has a second elastic body at a sample-contacting face, resin pellets and/or polishing particles being embedded in or attached to said second elastic body.
- A polishing method according to claim 11, 12, 13 or 14, characterized in that said polishing cloth has a second elastic body at a sample-contacting face, convex portions, concave portions or groove portions being formed in said second elastic body.
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5929292 | 1992-02-12 | ||
JP59292/92 | 1992-02-12 | ||
JP23035/93 | 1993-02-10 | ||
JP05023035A JP3024417B2 (en) | 1992-02-12 | 1993-02-10 | Polishing equipment |
PCT/JP1993/000173 WO1993015878A1 (en) | 1992-02-12 | 1993-02-12 | Abrading device and abrading method employing the same |
Publications (3)
Publication Number | Publication Date |
---|---|
EP0607441A1 true EP0607441A1 (en) | 1994-07-27 |
EP0607441A4 EP0607441A4 (en) | 1994-08-24 |
EP0607441B1 EP0607441B1 (en) | 1998-12-09 |
Family
ID=26360327
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP93904297A Expired - Lifetime EP0607441B1 (en) | 1992-02-12 | 1993-02-12 | Abrading device and abrading method employing the same |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0607441B1 (en) |
DE (1) | DE69322491T2 (en) |
WO (1) | WO1993015878A1 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0860238A2 (en) * | 1997-02-24 | 1998-08-26 | Ebara Corporation | Polishing apparatus |
US5985090A (en) * | 1995-05-17 | 1999-11-16 | Ebara Corporation | Polishing cloth and polishing apparatus having such polishing cloth |
EP0972612A2 (en) * | 1998-07-15 | 2000-01-19 | Nippon Pillar Packing Co. Ltd. | Polishing pad |
WO2001002136A1 (en) * | 1999-06-30 | 2001-01-11 | Lucent Technologies Inc. | A polishing pad having a water-repellant film thereon and a method for manufacturing the same |
US7160177B2 (en) | 2003-01-27 | 2007-01-09 | IGAM Ingenieurgesellschaft für angewandte Mechanik mbH | Method and device for the high-precision machining of the surface of an object, especially for polishing and lapping semiconductor substrates |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109277933A (en) * | 2018-10-18 | 2019-01-29 | 浙江晶盛机电股份有限公司 | A kind of silicon wafer outer round surface burnishing device and polishing method |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4979337A (en) * | 1986-10-03 | 1990-12-25 | Duppstadt Arthur G | Polishing tool for contact lenses and associated method |
EP0465868A2 (en) * | 1990-06-29 | 1992-01-15 | National Semiconductor Corporation | Controlled compliance polishing pad |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5590263A (en) * | 1978-12-26 | 1980-07-08 | Nippon Telegr & Teleph Corp <Ntt> | Device for flatly and accurately polishing crystal substrate without causing irregularity |
JPS63200966A (en) * | 1987-02-14 | 1988-08-19 | Yoshiaki Nagaura | Duplex polishing method |
-
1993
- 1993-02-12 DE DE69322491T patent/DE69322491T2/en not_active Expired - Fee Related
- 1993-02-12 EP EP93904297A patent/EP0607441B1/en not_active Expired - Lifetime
- 1993-02-12 WO PCT/JP1993/000173 patent/WO1993015878A1/en active IP Right Grant
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4979337A (en) * | 1986-10-03 | 1990-12-25 | Duppstadt Arthur G | Polishing tool for contact lenses and associated method |
EP0465868A2 (en) * | 1990-06-29 | 1992-01-15 | National Semiconductor Corporation | Controlled compliance polishing pad |
Non-Patent Citations (1)
Title |
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See also references of WO9315878A1 * |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5985090A (en) * | 1995-05-17 | 1999-11-16 | Ebara Corporation | Polishing cloth and polishing apparatus having such polishing cloth |
EP0860238A2 (en) * | 1997-02-24 | 1998-08-26 | Ebara Corporation | Polishing apparatus |
EP0860238A3 (en) * | 1997-02-24 | 2000-05-17 | Ebara Corporation | Polishing apparatus |
US6579152B1 (en) | 1997-02-24 | 2003-06-17 | Ebara Corporation | Polishing apparatus |
EP0972612A2 (en) * | 1998-07-15 | 2000-01-19 | Nippon Pillar Packing Co. Ltd. | Polishing pad |
EP0972612A3 (en) * | 1998-07-15 | 2003-01-15 | Nippon Pillar Packing Co. Ltd. | Polishing pad |
WO2001002136A1 (en) * | 1999-06-30 | 2001-01-11 | Lucent Technologies Inc. | A polishing pad having a water-repellant film thereon and a method for manufacturing the same |
US6439968B1 (en) | 1999-06-30 | 2002-08-27 | Agere Systems Guardian Corp. | Polishing pad having a water-repellant film theron and a method of manufacture therefor |
US7160177B2 (en) | 2003-01-27 | 2007-01-09 | IGAM Ingenieurgesellschaft für angewandte Mechanik mbH | Method and device for the high-precision machining of the surface of an object, especially for polishing and lapping semiconductor substrates |
Also Published As
Publication number | Publication date |
---|---|
DE69322491T2 (en) | 1999-08-26 |
EP0607441B1 (en) | 1998-12-09 |
EP0607441A4 (en) | 1994-08-24 |
DE69322491D1 (en) | 1999-01-21 |
WO1993015878A1 (en) | 1993-08-19 |
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