EP0490652A3 - A read/write memory having an improved write driver - Google Patents

A read/write memory having an improved write driver Download PDF

Info

Publication number: EP0490652A3
Authority: EP; European Patent Office
Prior art keywords: write; read; improved; driver; memory
Prior art date: 1990-12-13
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

EP19910311508

Other versions

EP0490652A2 (en

EP0490652B1 (en

Inventor

David Charles Mcclure

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

STMicroelectronics lnc USA

Original Assignee

SGS Thomson Microelectronics Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1990-12-13

Filing date

1991-12-11

Publication date

1993-01-27

1991-12-11 Application filed by SGS Thomson Microelectronics Inc filed Critical SGS Thomson Microelectronics Inc

1992-06-17 Publication of EP0490652A2 publication Critical patent/EP0490652A2/en

1993-01-27 Publication of EP0490652A3 publication Critical patent/EP0490652A3/en

1997-10-22 Application granted granted Critical

1997-10-22 Publication of EP0490652B1 publication Critical patent/EP0490652B1/en

2011-12-11 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Links

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
- G11C7/1096—Write circuits, e.g. I/O line write drivers
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1048—Data bus control circuits, e.g. precharging, presetting, equalising
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Computer Hardware Design (AREA)
Static Random-Access Memory (AREA)
Dram (AREA)

EP91311508A 1990-12-13 1991-12-11 A read/write memory having an improved write driver Expired - Lifetime EP0490652B1 (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US07/627,059 US5267197A (en)	1990-12-13	1990-12-13	Read/write memory having an improved write driver
US627059		1990-12-13

Publications (3)

Publication Number	Publication Date
EP0490652A2 EP0490652A2 (en)	1992-06-17
EP0490652A3 true EP0490652A3 (en)	1993-01-27
EP0490652B1 EP0490652B1 (en)	1997-10-22

Family

ID=24513017

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
EP91311508A Expired - Lifetime EP0490652B1 (en)	1990-12-13	1991-12-11	A read/write memory having an improved write driver

Country Status (5)

Country	Link
US (1)	US5267197A (en)
EP (1)	EP0490652B1 (en)
JP (1)	JP3322412B2 (en)
KR (1)	KR100228622B1 (en)
DE (1)	DE69128021T2 (en)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE69333909T2 (en) *	1992-11-12	2006-07-20	Promos Technologies, Inc.	Sense amplifier with local write drivers
US5369610A (en) *	1993-11-26	1994-11-29	United Microelectronics Corporation	Static memory with improved write-recovery
US6101618A (en) *	1993-12-22	2000-08-08	Stmicroelectronics, Inc.	Method and device for acquiring redundancy information from a packaged memory chip
JP3181479B2 (en) *	1994-12-15	2001-07-03	沖電気工業株式会社	Semiconductor storage device
EP0724209A1 (en) *	1995-01-25	1996-07-31	International Business Machines Corporation	Power management system for integrated circuits
KR0171954B1 (en) *	1995-06-30	1999-03-30	김주용	Data bus driving circuit
US5801563A (en) *	1996-01-19	1998-09-01	Sgs-Thomson Microelectronics, Inc.	Output driver circuitry having a single slew rate resistor
US5701275A (en) *	1996-01-19	1997-12-23	Sgs-Thomson Microelectronics, Inc.	Pipelined chip enable control circuitry and methodology
US5619456A (en) *	1996-01-19	1997-04-08	Sgs-Thomson Microelectronics, Inc.	Synchronous output circuit
JPH09231770A (en) *	1996-01-19	1997-09-05	Sgs Thomson Microelectron Inc	Circuit and method for completing write to memory cell
US5712584A (en) *	1996-01-19	1998-01-27	Sgs-Thomson Microelectronics, Inc.	Synchronous stress test control
US5767709A (en) *	1996-01-19	1998-06-16	Sgs-Thomson Microelectronics, Inc.	Synchronous test mode initalization
US5864696A (en) *	1996-01-19	1999-01-26	Stmicroelectronics, Inc.	Circuit and method for setting the time duration of a write to a memory cell
JPH09282886A (en) *	1996-01-19	1997-10-31	Sgs Thomson Microelectron Inc	Circuit and method for tracking of start of writing operation to memory cell
US5657292A (en) *	1996-01-19	1997-08-12	Sgs-Thomson Microelectronics, Inc.	Write pass through circuit
US5661691A (en) *	1996-05-23	1997-08-26	Vanguard International Semiconductor Corporation	Simple layout low power data line sense amplifier design
JPH1063581A (en) *	1996-08-26	1998-03-06	Nec Corp	Memory write control circuit
US5828239A (en) *	1997-04-14	1998-10-27	International Business Machines Corporation	Sense amplifier circuit with minimized clock skew effect
JP3244048B2 (en) *	1998-05-19	2002-01-07	日本電気株式会社	Semiconductor storage device
KR100543200B1 (en) *	1998-06-15	2006-04-12	주식회사 하이닉스반도체	Bit line clamping circuit of static ram
DE10032271C2 (en) *	2000-07-03	2002-08-01	Infineon Technologies Ag	MRAM configuration
US6552943B1 (en) *	2000-08-31	2003-04-22	United Memories, Inc.	Sense amplifier for dynamic random access memory (“DRAM”) devices having enhanced read and write speed
US6549452B1 (en)	2001-12-20	2003-04-15	Integrated Device Technology, Inc.	Variable width wordline pulses in a memory device
US6862208B2 (en) *	2003-04-11	2005-03-01	Freescale Semiconductor, Inc.	Memory device with sense amplifier and self-timed latch
KR100533384B1 (en) *	2004-04-12	2005-12-06	주식회사 하이닉스반도체	Semiconductor Memory Device including Global IO line driven by Low Amplitude Voltage Signal
KR100720260B1 (en)	2004-11-15	2007-05-22	주식회사 하이닉스반도체	Local input output line precharge circuit of semiconductor memory device
US20060245240A1 (en) *	2005-04-28	2006-11-02	Ibm Corporation	Method and apparatus for reducing time delay through static bitlines of a static memory
US7324368B2 (en) *	2006-03-30	2008-01-29	Arm Limited	Integrated circuit memory with write assist
US20070230004A1 (en) *	2006-04-04	2007-10-04	Johnson Yen	Read channel/hard disk controller interface including power-on reset circuit
KR100837801B1 (en) *	2006-06-29	2008-06-16	주식회사 하이닉스반도체	Semiconductor Memory Apparatus
JP4504397B2 (en)	2007-05-29	2010-07-14	株式会社東芝	Semiconductor memory device
US9013940B2 (en) *	2013-02-28	2015-04-21	Taiwan Semiconductor Manufacturing Company, Ltd.	Sense amplifier
US9281056B2 (en) *	2014-06-18	2016-03-08	Taiwan Semiconductor Manufacturing Company, Ltd.	Static random access memory and method of using the same
DE102017117791A1 (en) *	2016-09-30	2018-04-05	Taiwan Semiconductor Manufacturing Co. Ltd.	Circuit and method for writing on a bit cell
US10755770B2 (en) *	2016-09-30	2020-08-25	Taiwan Semiconductor Manufacturing Company, Ltd.	Circuit and method for writing to a bit cell

Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0037625A1 (en) *	1980-02-16	1981-10-14	Fujitsu Limited	A static random-access semiconductor memory circuit
US4570243A (en) *	1982-07-16	1986-02-11	Inmos Corporation	Low power I/O scheme for semiconductor memories
EP0271283A2 (en) *	1986-12-06	1988-06-15	Fujitsu Limited	Static semiconductor memory device having improved pull-up operation for bit lines

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3727196A (en) *	1971-11-29	1973-04-10	Mostek Corp	Dynamic random access memory
US3778783A (en) *	1971-11-29	1973-12-11	Mostek Corp	Dynamic random access memory
US4575823A (en) *	1982-08-17	1986-03-11	Westinghouse Electric Corp.	Electrically alterable non-volatile memory
US4825413A (en) *	1987-02-24	1989-04-25	Texas Instruments Incorporated	Bipolar-CMOS static ram memory device
US4866674A (en) *	1988-02-16	1989-09-12	Texas Instruments Incorporated	Bitline pull-up circuit for a BiCMOS read/write memory
US4862421A (en) *	1988-02-16	1989-08-29	Texas Instruments Incorporated	Sensing and decoding scheme for a BiCMOS read/write memory
US4939693A (en) *	1989-02-14	1990-07-03	Texas Instruments Incorporated	BiCMOS static memory with improved performance stability

1990
- 1990-12-13 US US07/627,059 patent/US5267197A/en not_active Expired - Lifetime
1991
- 1991-12-11 DE DE69128021T patent/DE69128021T2/en not_active Expired - Fee Related
- 1991-12-11 JP JP32728191A patent/JP3322412B2/en not_active Expired - Lifetime
- 1991-12-11 EP EP91311508A patent/EP0490652B1/en not_active Expired - Lifetime
- 1991-12-13 KR KR1019910022986A patent/KR100228622B1/en not_active IP Right Cessation

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0037625A1 (en) *	1980-02-16	1981-10-14	Fujitsu Limited	A static random-access semiconductor memory circuit
US4570243A (en) *	1982-07-16	1986-02-11	Inmos Corporation	Low power I/O scheme for semiconductor memories
EP0271283A2 (en) *	1986-12-06	1988-06-15	Fujitsu Limited	Static semiconductor memory device having improved pull-up operation for bit lines

Also Published As

Publication number	Publication date
JP3322412B2 (en)	2002-09-09
DE69128021T2 (en)	1998-03-12
KR100228622B1 (en)	1999-11-01
KR920013449A (en)	1992-07-29
EP0490652A2 (en)	1992-06-17
JPH04291093A (en)	1992-10-15
EP0490652B1 (en)	1997-10-22
DE69128021D1 (en)	1997-11-27
US5267197A (en)	1993-11-30

Legal Events

Date	Code	Title	Description
1992-04-30	PUAI	Public reference made under article 153(3) epc to a published international application that has entered the european phase	Free format text: ORIGINAL CODE: 0009012
1992-06-17	AK	Designated contracting states	Kind code of ref document: A2 Designated state(s): DE FR GB IT
1992-12-09	PUAL	Search report despatched	Free format text: ORIGINAL CODE: 0009013
1993-01-27	AK	Designated contracting states	Kind code of ref document: A3 Designated state(s): DE FR GB IT
1993-09-22	17P	Request for examination filed	Effective date: 19930726
1996-04-03	17Q	First examination report despatched	Effective date: 19960220
1996-11-28	GRAG	Despatch of communication of intention to grant	Free format text: ORIGINAL CODE: EPIDOS AGRA
1997-04-23	GRAH	Despatch of communication of intention to grant a patent	Free format text: ORIGINAL CODE: EPIDOS IGRA
1997-08-06	GRAH	Despatch of communication of intention to grant a patent	Free format text: ORIGINAL CODE: EPIDOS IGRA
1997-09-05	GRAA	(expected) grant	Free format text: ORIGINAL CODE: 0009210
1997-10-22	AK	Designated contracting states	Kind code of ref document: B1 Designated state(s): DE FR GB IT
1997-11-27	REF	Corresponds to:	Ref document number: 69128021 Country of ref document: DE Date of ref document: 19971127
1997-12-22	PGFP	Annual fee paid to national office [announced via postgrant information from national office to epo]	Ref country code: DE Payment date: 19971222 Year of fee payment: 7
1997-12-24	ITF	It: translation for a ep patent filed	Owner name: PORTA CHECCACCI E BOTTI S.R.L.
1998-02-20	ET	Fr: translation filed
1998-08-28	PLBE	No opposition filed within time limit	Free format text: ORIGINAL CODE: 0009261
1998-08-28	STAA	Information on the status of an ep patent application or granted ep patent	Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT
1998-10-14	26N	No opposition filed
1999-10-01	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: DE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 19991001
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2006-08-23	GBPC	Gb: european patent ceased through non-payment of renewal fee	Effective date: 20051211
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Publication	Publication Date	Title
EP0490652A3 (en)	1993-01-27	A read/write memory having an improved write driver
EP0412666A3 (en)	1992-12-23	A read/write memory
GB9116493D0 (en)	1991-09-11	Read and write circuitry for a memory
GB2254469B (en)	1995-05-10	Data storage
EP0376570A3 (en)	1990-10-31	Data storage case having a write/protect assembly
EP0490679A3 (en)	1992-10-14	A semiconductor memory with separate time-out control for read and write operations
EP0424964A3 (en)	1992-11-19	Read only memory device
EP0425849A3 (en)	1992-07-29	Data memory access
EP0465216A3 (en)	1992-08-05	Compact read/write scanner
GB8814077D0 (en)	1988-07-20	Data memory system
EP0492455A3 (en)	1993-05-05	An information reading device
EP0638903A3 (en)	1995-11-29	Read write memory with negative feedback-controlled dummy memory circuit.
EP0459794A3 (en)	1993-08-04	Read only memory device
GB2234873B (en)	1994-07-27	Read-write memory device
GB2280060B (en)	1996-11-20	Head suspension assembly for a read/write head
EP0594345A3 (en)	1994-08-24	Read/write memory
GB2245730B (en)	1994-08-10	A write driver having a precharging means
EP0338848A3 (en)	1989-11-08	Card read/write device
EP0529270A3 (en)	1993-07-07	Write protection for memory diskettes
EP0547890A3 (en)	1993-12-08	A read/write memory with interlocked write control
HK61896A (en)	1996-04-19	Integrated memory comprising a sense amplifier
EP0443777A3 (en)	1992-11-04	Write circuit for non-volatile memory device
GB2302974B (en)	1999-07-07	A read only memory device
EP0607942A3 (en)	1994-08-24	Read only memory.
GB9222728D0 (en)	1992-12-09	Read only memory