EP0427143A3 - Semiconductor power module - Google Patents
Semiconductor power module Download PDFInfo
- Publication number
- EP0427143A3 EP0427143A3 EP19900121048 EP90121048A EP0427143A3 EP 0427143 A3 EP0427143 A3 EP 0427143A3 EP 19900121048 EP19900121048 EP 19900121048 EP 90121048 A EP90121048 A EP 90121048A EP 0427143 A3 EP0427143 A3 EP 0427143A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- power module
- semiconductor power
- semiconductor
- module
- power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49109—Connecting at different heights outside the semiconductor or solid-state body
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/01005—Boron [B]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01029—Copper [Cu]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01031—Gallium [Ga]
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- H01L2924/01032—Germanium [Ge]
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- H01L2924/01052—Tellurium [Te]
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- H01L2924/01068—Erbium [Er]
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- H01L2924/01082—Lead [Pb]
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12033—Gunn diode
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
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- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Conversion In General (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE3937045 | 1989-11-07 | ||
DE3937045A DE3937045A1 (en) | 1989-11-07 | 1989-11-07 | PERFORMANCE SEMICONDUCTOR MODULE |
Publications (3)
Publication Number | Publication Date |
---|---|
EP0427143A2 EP0427143A2 (en) | 1991-05-15 |
EP0427143A3 true EP0427143A3 (en) | 1991-10-09 |
EP0427143B1 EP0427143B1 (en) | 1995-02-15 |
Family
ID=6393041
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP90121048A Expired - Lifetime EP0427143B1 (en) | 1989-11-07 | 1990-11-02 | Semiconductor power module |
Country Status (2)
Country | Link |
---|---|
EP (1) | EP0427143B1 (en) |
DE (2) | DE3937045A1 (en) |
Families Citing this family (99)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5579217A (en) * | 1991-07-10 | 1996-11-26 | Kenetech Windpower, Inc. | Laminated bus assembly and coupling apparatus for a high power electrical switching converter |
US5172310A (en) * | 1991-07-10 | 1992-12-15 | U.S. Windpower, Inc. | Low impedance bus for power electronics |
DE4130160A1 (en) * | 1991-09-11 | 1993-03-25 | Export Contor Aussenhandel | ELECTRONIC SWITCH |
DE69226141T2 (en) * | 1991-09-20 | 1998-12-03 | Hitachi Ltd | Three-phase three-stage inverter |
JP2882143B2 (en) * | 1991-12-10 | 1999-04-12 | 富士電機株式会社 | Internal wiring structure of semiconductor device |
US5170337A (en) * | 1992-01-29 | 1992-12-08 | General Electric Company | Low-inductance package for multiple paralleled devices operating at high frequency |
JP2725952B2 (en) * | 1992-06-30 | 1998-03-11 | 三菱電機株式会社 | Semiconductor power module |
DE4222973A1 (en) * | 1992-07-13 | 1994-01-20 | Asea Brown Boveri | Bi-directional semiconductor switch |
JP2725954B2 (en) * | 1992-07-21 | 1998-03-11 | 三菱電機株式会社 | Semiconductor device and manufacturing method thereof |
JP3053298B2 (en) * | 1992-08-19 | 2000-06-19 | 株式会社東芝 | Semiconductor device |
JP2973799B2 (en) * | 1993-04-23 | 1999-11-08 | 富士電機株式会社 | Power transistor module |
US5519253A (en) * | 1993-09-07 | 1996-05-21 | Delco Electronics Corp. | Coaxial switch module |
US5444295A (en) * | 1993-09-07 | 1995-08-22 | Delco Electronics Corp. | Linear dual switch module |
US5563447A (en) * | 1993-09-07 | 1996-10-08 | Delco Electronics Corp. | High power semiconductor switch module |
JP2531928B2 (en) * | 1993-11-05 | 1996-09-04 | 株式会社東芝 | Semiconductor stack |
AT406434B (en) * | 1993-12-23 | 2000-05-25 | Ixys Semiconductor Gmbh | DEVICE FOR FORMING A THREE-PHASE VOLTAGE SYSTEM INTO A PREDIBLE DC VOLTAGE SUPPLYING A CONSUMER |
US5539254A (en) * | 1994-03-09 | 1996-07-23 | Delco Electronics Corp. | Substrate subassembly for a transistor switch module |
DE4412407C2 (en) * | 1994-04-11 | 1996-03-07 | Jungheinrich Ag | Circuit arrangement for the operation of at least one battery-operated electric motor in an industrial truck |
US5517059A (en) * | 1994-04-26 | 1996-05-14 | Delco Electronics Corp. | Electron and laser beam welding apparatus |
DE4421319A1 (en) * | 1994-06-17 | 1995-12-21 | Abb Management Ag | Low-inductance power semiconductor module |
US5541453A (en) * | 1995-04-14 | 1996-07-30 | Abb Semiconductors, Ltd. | Power semiconductor module |
JP3357220B2 (en) * | 1995-07-07 | 2002-12-16 | 三菱電機株式会社 | Semiconductor device |
JP3396566B2 (en) * | 1995-10-25 | 2003-04-14 | 三菱電機株式会社 | Semiconductor device |
US5744861A (en) * | 1995-11-13 | 1998-04-28 | Asea Brown Boveri Ag | Power semiconductor module |
US5705848A (en) * | 1995-11-24 | 1998-01-06 | Asea Brown Boveri Ag | Power semiconductor module having a plurality of submodules |
JP3480771B2 (en) * | 1995-12-20 | 2003-12-22 | 三菱電機株式会社 | Semiconductor device |
US5777849A (en) * | 1996-02-06 | 1998-07-07 | Asea Brown Boveri Ag | Power semiconductor module having elongate plug contacts |
DE19628131C2 (en) * | 1996-07-12 | 2003-07-17 | Semikron Elektronik Gmbh | Gate voltage limitation for a circuit arrangement |
US6954368B1 (en) | 1996-07-22 | 2005-10-11 | HYDRO-QUéBEC | Low stray interconnection inductance power converting molecule for converting a DC voltage into an AC voltage, and a method therefor |
DE69726518T2 (en) * | 1996-09-06 | 2004-10-07 | Hitachi Ltd | Power semiconductor arrangement in a modular design |
DE19732723B4 (en) * | 1997-07-30 | 2005-07-07 | Semikron Elektronik Gmbh | Low-inductance circuit arrangement |
US5895974A (en) * | 1998-04-06 | 1999-04-20 | Delco Electronics Corp. | Durable substrate subassembly for transistor switch module |
US6127727A (en) * | 1998-04-06 | 2000-10-03 | Delco Electronics Corp. | Semiconductor substrate subassembly with alignment and stress relief features |
US6054765A (en) * | 1998-04-27 | 2000-04-25 | Delco Electronics Corporation | Parallel dual switch module |
DE50013161D1 (en) | 1999-03-17 | 2006-08-24 | Eupec Gmbh & Co Kg | SEMICONDUCTOR POWER MODULE |
JP3692906B2 (en) * | 2000-05-25 | 2005-09-07 | 日産自動車株式会社 | Power wiring structure and semiconductor device |
DE10037533C1 (en) * | 2000-08-01 | 2002-01-31 | Semikron Elektronik Gmbh | Low-inductance circuit arrangement |
US6845017B2 (en) | 2000-09-20 | 2005-01-18 | Ballard Power Systems Corporation | Substrate-level DC bus design to reduce module inductance |
US7012810B2 (en) | 2000-09-20 | 2006-03-14 | Ballard Power Systems Corporation | Leadframe-based module DC bus design to reduce module inductance |
US20020034088A1 (en) * | 2000-09-20 | 2002-03-21 | Scott Parkhill | Leadframe-based module DC bus design to reduce module inductance |
JP2002141463A (en) * | 2000-10-31 | 2002-05-17 | Mitsubishi Electric Corp | Semiconductor module |
EP1376696B1 (en) * | 2001-03-30 | 2012-01-25 | Hitachi, Ltd. | Semiconductor device |
JP3809346B2 (en) * | 2001-06-15 | 2006-08-16 | トヨタ自動車株式会社 | Switching circuit |
JP4540884B2 (en) * | 2001-06-19 | 2010-09-08 | 三菱電機株式会社 | Semiconductor device |
DE10294631D2 (en) * | 2001-09-28 | 2004-10-07 | Siemens Ag | Arrangement with power semiconductor components for power control of high currents and application of the arrangement |
DE10159851B4 (en) | 2001-12-06 | 2006-05-24 | Infineon Technologies Ag | Semiconductor device arrangement with reduced oscillation tendency |
DE10237561C1 (en) | 2002-08-16 | 2003-10-16 | Semikron Elektronik Gmbh | Power semiconductor circuit device has DC and AC terminal leads extending parallel to substrate and/or connector paths and provided with surface elements for bonding wire connections |
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DE102005016650B4 (en) | 2005-04-12 | 2009-11-19 | Semikron Elektronik Gmbh & Co. Kg | Power semiconductor module with butt soldered connection and connection elements |
DE102005030247B4 (en) * | 2005-06-29 | 2009-06-04 | Semikron Elektronik Gmbh & Co. Kg | Power semiconductor module with high current carrying capacity connectors |
US7426099B2 (en) | 2005-06-30 | 2008-09-16 | Continental Automotive Systems Us, Inc. | Controller method, apparatus and article suitable for electric drive |
DE102005037522A1 (en) | 2005-08-09 | 2007-02-15 | Semikron Elektronik Gmbh & Co. Kg | Power semiconductor module with trough-shaped basic body |
DE102006004031B3 (en) * | 2006-01-27 | 2007-03-08 | Infineon Technologies Ag | Power semiconductor module for inverter etc., has connection points for low and high potentials in sequence that corresponds to that of external connection terminals on two bus rails |
JP4829690B2 (en) * | 2006-06-09 | 2011-12-07 | 本田技研工業株式会社 | Semiconductor device |
EP2202793A3 (en) * | 2006-06-09 | 2010-11-10 | Honda Motor Co., Ltd. | Semiconductor device |
DE102006027481C5 (en) * | 2006-06-14 | 2012-11-08 | Semikron Elektronik Gmbh & Co. Kg | Power semiconductor module with mutually electrically insulated connection elements |
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EP0166968A1 (en) * | 1984-06-01 | 1986-01-08 | Anton Piller GmbH & Co. KG | Semiconductor module for a fast switching arrangement |
EP0277546A1 (en) * | 1987-01-21 | 1988-08-10 | Siemens Aktiengesellschaft | Semiconductor device having at least one semiconductor body |
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---|---|---|---|---|
JPS6393126A (en) * | 1986-10-08 | 1988-04-23 | Fuji Electric Co Ltd | Semiconductor device |
-
1989
- 1989-11-07 DE DE3937045A patent/DE3937045A1/en not_active Ceased
-
1990
- 1990-11-02 DE DE59008471T patent/DE59008471D1/en not_active Expired - Lifetime
- 1990-11-02 EP EP90121048A patent/EP0427143B1/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0166968A1 (en) * | 1984-06-01 | 1986-01-08 | Anton Piller GmbH & Co. KG | Semiconductor module for a fast switching arrangement |
EP0277546A1 (en) * | 1987-01-21 | 1988-08-10 | Siemens Aktiengesellschaft | Semiconductor device having at least one semiconductor body |
Non-Patent Citations (1)
Title |
---|
ETZ ELEKTROTECHNISCHES ZEITSCHRIFT, Band 110, Nr. 10, Mai 1989, Seiten 472-477, Berlin, DE; R. BAYERER: "Anwendung, Ansteuerung und Kurzschlussschutz von IGBT" * |
Also Published As
Publication number | Publication date |
---|---|
EP0427143A2 (en) | 1991-05-15 |
DE3937045A1 (en) | 1991-05-08 |
DE59008471D1 (en) | 1995-03-23 |
EP0427143B1 (en) | 1995-02-15 |
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