EP0427143A3 - Semiconductor power module - Google Patents

Semiconductor power module Download PDF

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Publication number
EP0427143A3
EP0427143A3 EP19900121048 EP90121048A EP0427143A3 EP 0427143 A3 EP0427143 A3 EP 0427143A3 EP 19900121048 EP19900121048 EP 19900121048 EP 90121048 A EP90121048 A EP 90121048A EP 0427143 A3 EP0427143 A3 EP 0427143A3
Authority
EP
European Patent Office
Prior art keywords
power module
semiconductor power
semiconductor
module
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP19900121048
Other languages
German (de)
Other versions
EP0427143A2 (en
EP0427143B1 (en
Inventor
Reinhold Dr. Bayerer
Thomas Schneider
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IXYS Semiconductor GmbH
Original Assignee
ABB-IXYS SEMICONDUCTOR GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ABB-IXYS SEMICONDUCTOR GmbH filed Critical ABB-IXYS SEMICONDUCTOR GmbH
Publication of EP0427143A2 publication Critical patent/EP0427143A2/en
Publication of EP0427143A3 publication Critical patent/EP0427143A3/en
Application granted granted Critical
Publication of EP0427143B1 publication Critical patent/EP0427143B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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    • H01ELECTRIC ELEMENTS
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    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
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    • H01L2224/48091Arched
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
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    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49109Connecting at different heights outside the semiconductor or solid-state body
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    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
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    • H01L2224/73265Layer and wire connectors
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    • H01ELECTRIC ELEMENTS
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    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01ELECTRIC ELEMENTS
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    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
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    • H01ELECTRIC ELEMENTS
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01031Gallium [Ga]
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    • H01L2924/01032Germanium [Ge]
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    • H01ELECTRIC ELEMENTS
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    • H01L2924/01052Tellurium [Te]
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    • H01L2924/01068Erbium [Er]
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    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1203Rectifying Diode
    • H01L2924/12033Gunn diode
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    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • H01L2924/13055Insulated gate bipolar transistor [IGBT]
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    • H01L2924/13Discrete devices, e.g. 3 terminal devices
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    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/15786Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787Ceramics, e.g. crystalline carbides, nitrides or oxides
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    • H01ELECTRIC ELEMENTS
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    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor
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    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/30107Inductance

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Conversion In General (AREA)
EP90121048A 1989-11-07 1990-11-02 Semiconductor power module Expired - Lifetime EP0427143B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3937045 1989-11-07
DE3937045A DE3937045A1 (en) 1989-11-07 1989-11-07 PERFORMANCE SEMICONDUCTOR MODULE

Publications (3)

Publication Number Publication Date
EP0427143A2 EP0427143A2 (en) 1991-05-15
EP0427143A3 true EP0427143A3 (en) 1991-10-09
EP0427143B1 EP0427143B1 (en) 1995-02-15

Family

ID=6393041

Family Applications (1)

Application Number Title Priority Date Filing Date
EP90121048A Expired - Lifetime EP0427143B1 (en) 1989-11-07 1990-11-02 Semiconductor power module

Country Status (2)

Country Link
EP (1) EP0427143B1 (en)
DE (2) DE3937045A1 (en)

Families Citing this family (99)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5579217A (en) * 1991-07-10 1996-11-26 Kenetech Windpower, Inc. Laminated bus assembly and coupling apparatus for a high power electrical switching converter
US5172310A (en) * 1991-07-10 1992-12-15 U.S. Windpower, Inc. Low impedance bus for power electronics
DE4130160A1 (en) * 1991-09-11 1993-03-25 Export Contor Aussenhandel ELECTRONIC SWITCH
DE69226141T2 (en) * 1991-09-20 1998-12-03 Hitachi Ltd Three-phase three-stage inverter
JP2882143B2 (en) * 1991-12-10 1999-04-12 富士電機株式会社 Internal wiring structure of semiconductor device
US5170337A (en) * 1992-01-29 1992-12-08 General Electric Company Low-inductance package for multiple paralleled devices operating at high frequency
JP2725952B2 (en) * 1992-06-30 1998-03-11 三菱電機株式会社 Semiconductor power module
DE4222973A1 (en) * 1992-07-13 1994-01-20 Asea Brown Boveri Bi-directional semiconductor switch
JP2725954B2 (en) * 1992-07-21 1998-03-11 三菱電機株式会社 Semiconductor device and manufacturing method thereof
JP3053298B2 (en) * 1992-08-19 2000-06-19 株式会社東芝 Semiconductor device
JP2973799B2 (en) * 1993-04-23 1999-11-08 富士電機株式会社 Power transistor module
US5519253A (en) * 1993-09-07 1996-05-21 Delco Electronics Corp. Coaxial switch module
US5444295A (en) * 1993-09-07 1995-08-22 Delco Electronics Corp. Linear dual switch module
US5563447A (en) * 1993-09-07 1996-10-08 Delco Electronics Corp. High power semiconductor switch module
JP2531928B2 (en) * 1993-11-05 1996-09-04 株式会社東芝 Semiconductor stack
AT406434B (en) * 1993-12-23 2000-05-25 Ixys Semiconductor Gmbh DEVICE FOR FORMING A THREE-PHASE VOLTAGE SYSTEM INTO A PREDIBLE DC VOLTAGE SUPPLYING A CONSUMER
US5539254A (en) * 1994-03-09 1996-07-23 Delco Electronics Corp. Substrate subassembly for a transistor switch module
DE4412407C2 (en) * 1994-04-11 1996-03-07 Jungheinrich Ag Circuit arrangement for the operation of at least one battery-operated electric motor in an industrial truck
US5517059A (en) * 1994-04-26 1996-05-14 Delco Electronics Corp. Electron and laser beam welding apparatus
DE4421319A1 (en) * 1994-06-17 1995-12-21 Abb Management Ag Low-inductance power semiconductor module
US5541453A (en) * 1995-04-14 1996-07-30 Abb Semiconductors, Ltd. Power semiconductor module
JP3357220B2 (en) * 1995-07-07 2002-12-16 三菱電機株式会社 Semiconductor device
JP3396566B2 (en) * 1995-10-25 2003-04-14 三菱電機株式会社 Semiconductor device
US5744861A (en) * 1995-11-13 1998-04-28 Asea Brown Boveri Ag Power semiconductor module
US5705848A (en) * 1995-11-24 1998-01-06 Asea Brown Boveri Ag Power semiconductor module having a plurality of submodules
JP3480771B2 (en) * 1995-12-20 2003-12-22 三菱電機株式会社 Semiconductor device
US5777849A (en) * 1996-02-06 1998-07-07 Asea Brown Boveri Ag Power semiconductor module having elongate plug contacts
DE19628131C2 (en) * 1996-07-12 2003-07-17 Semikron Elektronik Gmbh Gate voltage limitation for a circuit arrangement
US6954368B1 (en) 1996-07-22 2005-10-11 HYDRO-QUéBEC Low stray interconnection inductance power converting molecule for converting a DC voltage into an AC voltage, and a method therefor
DE69726518T2 (en) * 1996-09-06 2004-10-07 Hitachi Ltd Power semiconductor arrangement in a modular design
DE19732723B4 (en) * 1997-07-30 2005-07-07 Semikron Elektronik Gmbh Low-inductance circuit arrangement
US5895974A (en) * 1998-04-06 1999-04-20 Delco Electronics Corp. Durable substrate subassembly for transistor switch module
US6127727A (en) * 1998-04-06 2000-10-03 Delco Electronics Corp. Semiconductor substrate subassembly with alignment and stress relief features
US6054765A (en) * 1998-04-27 2000-04-25 Delco Electronics Corporation Parallel dual switch module
DE50013161D1 (en) 1999-03-17 2006-08-24 Eupec Gmbh & Co Kg SEMICONDUCTOR POWER MODULE
JP3692906B2 (en) * 2000-05-25 2005-09-07 日産自動車株式会社 Power wiring structure and semiconductor device
DE10037533C1 (en) * 2000-08-01 2002-01-31 Semikron Elektronik Gmbh Low-inductance circuit arrangement
US6845017B2 (en) 2000-09-20 2005-01-18 Ballard Power Systems Corporation Substrate-level DC bus design to reduce module inductance
US7012810B2 (en) 2000-09-20 2006-03-14 Ballard Power Systems Corporation Leadframe-based module DC bus design to reduce module inductance
US20020034088A1 (en) * 2000-09-20 2002-03-21 Scott Parkhill Leadframe-based module DC bus design to reduce module inductance
JP2002141463A (en) * 2000-10-31 2002-05-17 Mitsubishi Electric Corp Semiconductor module
EP1376696B1 (en) * 2001-03-30 2012-01-25 Hitachi, Ltd. Semiconductor device
JP3809346B2 (en) * 2001-06-15 2006-08-16 トヨタ自動車株式会社 Switching circuit
JP4540884B2 (en) * 2001-06-19 2010-09-08 三菱電機株式会社 Semiconductor device
DE10294631D2 (en) * 2001-09-28 2004-10-07 Siemens Ag Arrangement with power semiconductor components for power control of high currents and application of the arrangement
DE10159851B4 (en) 2001-12-06 2006-05-24 Infineon Technologies Ag Semiconductor device arrangement with reduced oscillation tendency
DE10237561C1 (en) 2002-08-16 2003-10-16 Semikron Elektronik Gmbh Power semiconductor circuit device has DC and AC terminal leads extending parallel to substrate and/or connector paths and provided with surface elements for bonding wire connections
DE10316356B4 (en) 2003-04-10 2012-07-26 Semikron Elektronik Gmbh & Co. Kg Modular power semiconductor module
WO2004100344A2 (en) 2003-05-02 2004-11-18 Ballard Power Systems Corporation Method and apparatus for tracking maximum power point for inverters in photovoltaic applications
US7269036B2 (en) 2003-05-12 2007-09-11 Siemens Vdo Automotive Corporation Method and apparatus for adjusting wakeup time in electrical power converter systems and transformer isolation
US7443692B2 (en) 2003-05-16 2008-10-28 Continental Automotive Systems Us, Inc. Power converter architecture employing at least one capacitor across a DC bus
US7295448B2 (en) 2004-06-04 2007-11-13 Siemens Vdo Automotive Corporation Interleaved power converter
US7289329B2 (en) 2004-06-04 2007-10-30 Siemens Vdo Automotive Corporation Integration of planar transformer and/or planar inductor with power switches in power converter
US7180763B2 (en) 2004-09-21 2007-02-20 Ballard Power Systems Corporation Power converter
DE102004057421B4 (en) * 2004-11-27 2009-07-09 Semikron Elektronik Gmbh & Co. Kg Pressure-contacted power semiconductor module for high ambient temperatures and method for its production
DE102004059313B3 (en) * 2004-12-09 2006-05-04 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module, has half-bridge circuit arrangement with power circuit, each consisting of power transistor and power diode, and two electrically alternating current connectors connected to transistors, respectively
DE102005016650B4 (en) 2005-04-12 2009-11-19 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module with butt soldered connection and connection elements
DE102005030247B4 (en) * 2005-06-29 2009-06-04 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module with high current carrying capacity connectors
US7426099B2 (en) 2005-06-30 2008-09-16 Continental Automotive Systems Us, Inc. Controller method, apparatus and article suitable for electric drive
DE102005037522A1 (en) 2005-08-09 2007-02-15 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module with trough-shaped basic body
DE102006004031B3 (en) * 2006-01-27 2007-03-08 Infineon Technologies Ag Power semiconductor module for inverter etc., has connection points for low and high potentials in sequence that corresponds to that of external connection terminals on two bus rails
JP4829690B2 (en) * 2006-06-09 2011-12-07 本田技研工業株式会社 Semiconductor device
EP2202793A3 (en) * 2006-06-09 2010-11-10 Honda Motor Co., Ltd. Semiconductor device
DE102006027481C5 (en) * 2006-06-14 2012-11-08 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module with mutually electrically insulated connection elements
JP4820233B2 (en) * 2006-08-09 2011-11-24 本田技研工業株式会社 Semiconductor device
EP1968188B1 (en) 2007-03-09 2012-08-08 HÜTTINGER Elektronik GmbH + Co. KG Class D amplifier assembly
DE102007036048A1 (en) * 2007-08-01 2009-02-05 Siemens Ag Arrangement with at least one semiconductor component, in particular a power semiconductor component for power control of high currents
US8018047B2 (en) 2007-08-06 2011-09-13 Infineon Technologies Ag Power semiconductor module including a multilayer substrate
US8154114B2 (en) 2007-08-06 2012-04-10 Infineon Technologies Ag Power semiconductor module
DE102008038421B4 (en) * 2007-08-25 2015-07-30 Sew-Eurodrive Gmbh & Co Kg Method for operating an electrical device
DE102007050405B4 (en) 2007-10-22 2010-09-09 Continental Automotive Gmbh Electrical power component, in particular power semiconductor module, with a cooling device and method for surface and heat-conducting bonding of a cooling device to an electrical power component
EP2071626A1 (en) * 2007-12-11 2009-06-17 ABB Research Ltd. Semiconductor module and connection terminal device
WO2009093982A1 (en) 2008-01-25 2009-07-30 Iskralab D.O.O. Power switching module
JP5476028B2 (en) 2009-04-17 2014-04-23 株式会社日立製作所 Power semiconductor switching element gate drive circuit and inverter circuit
DE102009029515A1 (en) * 2009-09-16 2011-03-24 Robert Bosch Gmbh Power semiconductor module and power semiconductor circuitry
EP4036967B1 (en) * 2011-06-27 2024-03-13 Rohm Co., Ltd. Semiconductor module
US8487407B2 (en) 2011-10-13 2013-07-16 Infineon Technologies Ag Low impedance gate control method and apparatus
US9209176B2 (en) 2011-12-07 2015-12-08 Transphorm Inc. Semiconductor modules and methods of forming the same
DE102013104522B3 (en) * 2013-05-03 2014-06-26 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module for arrangement with capacitor, has contact devices at longitudinal side of adjacent sub-units arranged mirror-symmetrically to one another
DE102013212263A1 (en) * 2013-06-26 2014-12-31 Robert Bosch Gmbh Electrical circuit arrangement
DE102014102018B3 (en) 2014-02-18 2015-02-19 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module with low-inductively designed module-internal load and auxiliary connection devices
WO2015176985A1 (en) 2014-05-20 2015-11-26 Abb Technology Ag Semiconductor power module with low stray inductance
DE102014111931B4 (en) * 2014-08-20 2021-07-08 Infineon Technologies Ag Low-inductance circuit arrangement with load current busbar
EP3113223A1 (en) * 2015-07-02 2017-01-04 ABB Technology AG Power semiconductor module
DE102015216083A1 (en) * 2015-08-24 2017-03-02 Siemens Aktiengesellschaft Module arrangement for low-inductance operation of a power semiconductor module to a DC voltage circuit
DE102015115271B4 (en) 2015-09-10 2021-07-15 Infineon Technologies Ag ELECTRONICS ASSEMBLY WITH SUPPRESSION CAPACITORS AND METHOD FOR OPERATING THE ELECTRONICS ASSEMBLY
JP6697547B2 (en) * 2015-09-30 2020-05-20 アジャイル・パワー・スイッチ・3・ディー−インテグレイション・エイ・ピー・エス・アイ・3・ディー Semiconductor power device with additional track and method of manufacturing semiconductor power device
CN105789160B (en) * 2016-05-03 2017-05-24 扬州国扬电子有限公司 Combined electrode and three-level high power module thereof
WO2018096147A1 (en) * 2016-11-25 2018-05-31 Abb Schweiz Ag Power semiconductor module
US10410952B2 (en) 2016-12-15 2019-09-10 Infineon Technologies Ag Power semiconductor packages having a substrate with two or more metal layers and one or more polymer-based insulating layers for separating the metal layers
US10008411B2 (en) 2016-12-15 2018-06-26 Infineon Technologies Ag Parallel plate waveguide for power circuits
CN210379040U (en) * 2019-06-22 2020-04-21 深圳市奕通功率电子有限公司 Power module
DE102020212748A1 (en) 2020-10-08 2022-04-14 Zf Friedrichshafen Ag Power module for operating an electric vehicle drive with an intermediate circuit capacitor
EP4002454A1 (en) * 2020-11-23 2022-05-25 Hitachi Energy Switzerland AG Electrical contact arrangement, power semiconductor module, method for manufacturing an electrical contact arrangement and method for manufacturing a power semiconductor module
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DE102021213724A1 (en) 2021-12-02 2023-06-07 Zf Friedrichshafen Ag CHIP ASSEMBLY, POWER MODULE, METHOD OF MAKING CHIP ASSEMBLY AND METHOD OF ASSEMBLING A POWER MODULE
DE102022205514A1 (en) 2022-05-31 2023-11-30 Vitesco Technologies GmbH Half-bridge module with parallel supply lines connected to insulated connection surfaces between two strip sections and to one of the strip sections of a conductor track layer
DE102022205513A1 (en) 2022-05-31 2023-11-30 Vitesco Technologies GmbH Half-bridge module with isolated connection surfaces between two transistor strip sections
CN118136518A (en) * 2024-05-08 2024-06-04 浙江晶能微电子有限公司 Preparation method of power module

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0166968A1 (en) * 1984-06-01 1986-01-08 Anton Piller GmbH & Co. KG Semiconductor module for a fast switching arrangement
EP0277546A1 (en) * 1987-01-21 1988-08-10 Siemens Aktiengesellschaft Semiconductor device having at least one semiconductor body

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6393126A (en) * 1986-10-08 1988-04-23 Fuji Electric Co Ltd Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0166968A1 (en) * 1984-06-01 1986-01-08 Anton Piller GmbH & Co. KG Semiconductor module for a fast switching arrangement
EP0277546A1 (en) * 1987-01-21 1988-08-10 Siemens Aktiengesellschaft Semiconductor device having at least one semiconductor body

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ETZ ELEKTROTECHNISCHES ZEITSCHRIFT, Band 110, Nr. 10, Mai 1989, Seiten 472-477, Berlin, DE; R. BAYERER: "Anwendung, Ansteuerung und Kurzschlussschutz von IGBT" *

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EP0427143A2 (en) 1991-05-15
DE3937045A1 (en) 1991-05-08
DE59008471D1 (en) 1995-03-23
EP0427143B1 (en) 1995-02-15

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