EP0280869A3 - A laser luminescence monitor for material thickness processes - Google Patents

A laser luminescence monitor for material thickness processes Download PDF

Info

Publication number
EP0280869A3
EP0280869A3 EP19880101092 EP88101092A EP0280869A3 EP 0280869 A3 EP0280869 A3 EP 0280869A3 EP 19880101092 EP19880101092 EP 19880101092 EP 88101092 A EP88101092 A EP 88101092A EP 0280869 A3 EP0280869 A3 EP 0280869A3
Authority
EP
European Patent Office
Prior art keywords
energy
bandgap
thickness
material thickness
monitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP19880101092
Other languages
German (de)
French (fr)
Other versions
EP0280869A2 (en
EP0280869B1 (en
Inventor
Zu-Jean Tien
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of EP0280869A2 publication Critical patent/EP0280869A2/en
Publication of EP0280869A3 publication Critical patent/EP0280869A3/en
Application granted granted Critical
Publication of EP0280869B1 publication Critical patent/EP0280869B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0658—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of emissivity or reradiation

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Weting (AREA)

Abstract

An apparatus and method for monitoring a change of thickness of a first material with a first bandgap energy, for disposal over a second material on a wafer and having a second different bandgap energy, wherein at least one of the materials has a direct bandgap. The apparatus comprises means for changing the thickness of the first material layer; means for directing a beam of energy to impinge at an angle on to the surface and to penetrate the wafer, with the beam having an energy sufficient to pump the at least one direct bandgap material to a higher energy state; and means for detecting the induced luminescence from the at least one direct bandgap material to determine when to alter the thickness changing process.
The present invention may be used to monitor both deposition and etching processes. It is particularly suited for determining the etch endpoint for III-V semiconductor materials such as GaAs and AlGaAs.
EP88101092A 1987-03-02 1988-01-26 A laser luminescence monitor for material thickness processes Expired - Lifetime EP0280869B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US20402 1987-03-02
US07/020,402 US4713140A (en) 1987-03-02 1987-03-02 Laser luminescence monitor for material thickness

Publications (3)

Publication Number Publication Date
EP0280869A2 EP0280869A2 (en) 1988-09-07
EP0280869A3 true EP0280869A3 (en) 1992-03-04
EP0280869B1 EP0280869B1 (en) 1994-04-13

Family

ID=21798437

Family Applications (1)

Application Number Title Priority Date Filing Date
EP88101092A Expired - Lifetime EP0280869B1 (en) 1987-03-02 1988-01-26 A laser luminescence monitor for material thickness processes

Country Status (4)

Country Link
US (1) US4713140A (en)
EP (1) EP0280869B1 (en)
JP (1) JPS63224336A (en)
DE (1) DE3888992T2 (en)

Families Citing this family (33)

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US4837044A (en) * 1987-01-23 1989-06-06 Itt Research Institute Rugate optical filter systems
DE3728705A1 (en) * 1987-08-28 1989-03-09 Agfa Gevaert Ag DEVICE FOR CHECKING COATED AND UNCOATED FILMS
US4902631A (en) * 1988-10-28 1990-02-20 At&T Bell Laboratories Monitoring the fabrication of semiconductor devices by photon induced electron emission
US4959244A (en) * 1989-03-27 1990-09-25 General Electric Company Temperature measurement and control for photohermal processes
EP0416787B1 (en) * 1989-09-01 1995-05-10 AT&T Corp. Plasma processing of III-V semiconductors, controlled by photoluminescence spectroscopy
US5015323A (en) * 1989-10-10 1991-05-14 The United States Of America As Represented By The Secretary Of Commerce Multi-tipped field-emission tool for nanostructure fabrication
US5087815A (en) * 1989-11-08 1992-02-11 Schultz J Albert High resolution mass spectrometry of recoiled ions for isotopic and trace elemental analysis
US5002631A (en) * 1990-03-09 1991-03-26 At&T Bell Laboratories Plasma etching apparatus and method
JPH0816607B2 (en) * 1990-10-30 1996-02-21 インターナショナル・ビジネス・マシーンズ・コーポレイション Thin film processing control method
WO1994006151A1 (en) * 1992-09-08 1994-03-17 Kabushiki Kaisha Komatsu Seisakusho Method of detecting end point of etching
US6614529B1 (en) * 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US7037403B1 (en) 1992-12-28 2006-05-02 Applied Materials Inc. In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization
US5450205A (en) * 1993-05-28 1995-09-12 Massachusetts Institute Of Technology Apparatus and method for real-time measurement of thin film layer thickness and changes thereof
US5330610A (en) * 1993-05-28 1994-07-19 Martin Marietta Energy Systems, Inc. Method of digital epilaxy by externally controlled closed-loop feedback
US5824158A (en) * 1993-06-30 1998-10-20 Kabushiki Kaisha Kobe Seiko Sho Chemical vapor deposition using inductively coupled plasma and system therefor
JP3223661B2 (en) * 1993-08-31 2001-10-29 ソニー株式会社 Plasma deposition method
IL107549A (en) * 1993-11-09 1996-01-31 Nova Measuring Instr Ltd Device for measuring the thickness of thin films
US5764365A (en) 1993-11-09 1998-06-09 Nova Measuring Instruments, Ltd. Two-dimensional beam deflector
US6342265B1 (en) * 1997-08-20 2002-01-29 Triumf Apparatus and method for in-situ thickness and stoichiometry measurement of thin films
US5969805A (en) * 1997-11-04 1999-10-19 Micron Technology, Inc. Method and apparatus employing external light source for endpoint detection
IL123575A (en) * 1998-03-05 2001-08-26 Nova Measuring Instr Ltd Method and apparatus for alignment of a wafer
JP4722244B2 (en) * 1998-07-14 2011-07-13 ノバ・メジャリング・インストルメンツ・リミテッド Apparatus for processing a substrate according to a predetermined photolithography process
US6212961B1 (en) 1999-02-11 2001-04-10 Nova Measuring Instruments Ltd. Buffer system for a wafer handling system
US6511920B2 (en) 2001-06-14 2003-01-28 Applied Materials, Inc. Optical marker layer for etch endpoint determination
US6991825B2 (en) * 2002-05-10 2006-01-31 Asm Assembly Automation Ltd. Dispensation of controlled quantities of material onto a substrate
US6955930B2 (en) * 2002-05-30 2005-10-18 Credence Systems Corporation Method for determining thickness of a semiconductor substrate at the floor of a trench
WO2005017996A1 (en) * 2003-03-14 2005-02-24 Andreas Mandelis Method of photocarrier radiometry of semiconductors
FR2867277A1 (en) * 2004-03-03 2005-09-09 Dgtec Detection of wearing of a component, useful for manufacturing e.g. ceramic, comprises manufacturing of the component, detecting the presence of photo luminescent compound and detecting and analyzing the fluorescent radiation emitted
JP2006176831A (en) * 2004-12-22 2006-07-06 Tokyo Electron Ltd Vapor deposition system
KR101365336B1 (en) 2005-10-11 2014-02-19 비티 이미징 피티와이 리미티드 Method and system for inspecting indirect bandgap semiconductor structure
JP2011527510A (en) * 2008-07-09 2011-10-27 ビーティー イメージング ピーティーワイ リミテッド Thin film imaging method and apparatus
DE102014107385A1 (en) * 2014-05-26 2015-11-26 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip and method for its production
CN106123792A (en) * 2016-08-25 2016-11-16 中冶北方（大连）工程技术有限公司 A kind of drying grate material layer thickness imaging system and method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4377436A (en) * 1980-05-13 1983-03-22 Bell Telephone Laboratories, Incorporated Plasma-assisted etch process with endpoint detection
EP0081785A2 (en) * 1981-12-11 1983-06-22 Hitachi, Ltd. Plasma monitor
US4394237A (en) * 1981-07-17 1983-07-19 Bell Telephone Laboratories, Incorporated Spectroscopic monitoring of gas-solid processes

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55157233A (en) * 1979-05-28 1980-12-06 Hitachi Ltd Method and apparatus for monitoring etching
US4285763A (en) * 1980-01-29 1981-08-25 Bell Telephone Laboratories, Incorporated Reactive ion etching of III-V semiconductor compounds
US4328068A (en) * 1980-07-22 1982-05-04 Rca Corporation Method for end point detection in a plasma etching process
US4415402A (en) * 1981-04-02 1983-11-15 The Perkin-Elmer Corporation End-point detection in plasma etching or phosphosilicate glass
JPS58218121A (en) * 1982-06-11 1983-12-19 Anelva Corp Monitoring method of silicon dry etching
US4493745A (en) * 1984-01-31 1985-01-15 International Business Machines Corporation Optical emission spectroscopy end point detection in plasma etching
US4491499A (en) * 1984-03-29 1985-01-01 At&T Technologies, Inc. Optical emission end point detector

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4377436A (en) * 1980-05-13 1983-03-22 Bell Telephone Laboratories, Incorporated Plasma-assisted etch process with endpoint detection
US4394237A (en) * 1981-07-17 1983-07-19 Bell Telephone Laboratories, Incorporated Spectroscopic monitoring of gas-solid processes
EP0081785A2 (en) * 1981-12-11 1983-06-22 Hitachi, Ltd. Plasma monitor

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS, vol. 34, no. 12, June 15, 1979 New York, CHIN et al. "Determination of the valence-band dis- continuity of InP-In1-x Gax P1-z Asz(x-0.13,z-0.29) by quantum-well luminescence" pages 862-864 *
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, vol. 21, no. 3, September/October 1982 New York DONELLY et al. "Laser Dia- gnostics of plasma etching: Measurement of Cl2+ in a chlorine discharge" *

Also Published As

Publication number Publication date
EP0280869A2 (en) 1988-09-07
JPH0316782B2 (en) 1991-03-06
JPS63224336A (en) 1988-09-19
DE3888992T2 (en) 1994-11-10
EP0280869B1 (en) 1994-04-13
US4713140A (en) 1987-12-15
DE3888992D1 (en) 1994-05-19

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