EP0278072A3 - Transistor mit permeabler Basis - Google Patents
Transistor mit permeabler Basis Download PDFInfo
- Publication number
- EP0278072A3 EP0278072A3 EP87116949A EP87116949A EP0278072A3 EP 0278072 A3 EP0278072 A3 EP 0278072A3 EP 87116949 A EP87116949 A EP 87116949A EP 87116949 A EP87116949 A EP 87116949A EP 0278072 A3 EP0278072 A3 EP 0278072A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- adjacent
- layer
- semiconductor
- permeable
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 abstract 5
- 239000000463 material Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US2076 | 1987-01-12 | ||
US07/002,076 US4752812A (en) | 1987-01-12 | 1987-01-12 | Permeable-base transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0278072A2 EP0278072A2 (de) | 1988-08-17 |
EP0278072A3 true EP0278072A3 (de) | 1990-03-14 |
Family
ID=21699154
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP87116949A Withdrawn EP0278072A3 (de) | 1987-01-12 | 1987-11-17 | Transistor mit permeabler Basis |
Country Status (3)
Country | Link |
---|---|
US (1) | US4752812A (de) |
EP (1) | EP0278072A3 (de) |
JP (1) | JPS63181374A (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5016074A (en) * | 1987-10-20 | 1991-05-14 | Bell Communications Research, Inc. | Epitaxial intermetallic contact for compound semiconductors |
WO1991015033A1 (en) * | 1990-03-20 | 1991-10-03 | Fujitsu Limited | Electron device having a current channel of dielectric material |
DE4337321A1 (de) * | 1993-11-02 | 1995-05-04 | Basf Ag | Cyclische Acetale, Verfahren zu deren Herstellung und deren Umsetzung zu Pflanzenschutzmitteln |
SE9904785D0 (sv) * | 1999-12-27 | 1999-12-27 | Abb Research Ltd | "A semiconductor device" |
US7816722B2 (en) * | 2004-02-04 | 2010-10-19 | Hewlett-Packard Development Company, L.P. | Memory array |
KR100557647B1 (ko) * | 2004-12-06 | 2006-03-10 | 동부아남반도체 주식회사 | 반도체 소자의 금속 배선 형성방법 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3204159A (en) * | 1960-09-14 | 1965-08-31 | Bramley Jenny | Rectifying majority carrier device |
FR1573639A (de) * | 1967-06-01 | 1969-07-04 | ||
US4104675A (en) * | 1977-06-21 | 1978-08-01 | International Business Machines Corporation | Moderate field hole and electron injection from one interface of MIM or MIS structures |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4217601A (en) * | 1979-02-15 | 1980-08-12 | International Business Machines Corporation | Non-volatile memory devices fabricated from graded or stepped energy band gap insulator MIM or MIS structure |
US4472726A (en) * | 1981-05-06 | 1984-09-18 | The United States Of America As Represented By The Secretary Of The Air Force | Two carrier dual injector apparatus |
US4647958A (en) * | 1984-04-16 | 1987-03-03 | Trw Inc. | Bipolar transistor construction |
-
1987
- 1987-01-12 US US07/002,076 patent/US4752812A/en not_active Expired - Lifetime
- 1987-10-19 JP JP62261922A patent/JPS63181374A/ja active Pending
- 1987-11-17 EP EP87116949A patent/EP0278072A3/de not_active Withdrawn
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3204159A (en) * | 1960-09-14 | 1965-08-31 | Bramley Jenny | Rectifying majority carrier device |
FR1573639A (de) * | 1967-06-01 | 1969-07-04 | ||
US4104675A (en) * | 1977-06-21 | 1978-08-01 | International Business Machines Corporation | Moderate field hole and electron injection from one interface of MIM or MIS structures |
Also Published As
Publication number | Publication date |
---|---|
EP0278072A2 (de) | 1988-08-17 |
US4752812A (en) | 1988-06-21 |
JPS63181374A (ja) | 1988-07-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
AK | Designated contracting states |
Kind code of ref document: A2 Designated state(s): DE FR GB IT |
|
17P | Request for examination filed |
Effective date: 19881126 |
|
PUAL | Search report despatched |
Free format text: ORIGINAL CODE: 0009013 |
|
AK | Designated contracting states |
Kind code of ref document: A3 Designated state(s): DE FR GB IT |
|
17Q | First examination report despatched |
Effective date: 19910725 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN |
|
18W | Application withdrawn |
Withdrawal date: 19911115 |
|
RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: ARIENZO, MAURIZIO Inventor name: DIMARIA, DONELLI JOSEPH |