EP0261652A3 - Lichtempfindliches Element mit ladungserzeugender Schicht und eine Ladungstransportschicht - Google Patents

Lichtempfindliches Element mit ladungserzeugender Schicht und eine Ladungstransportschicht Download PDF

Info

Publication number
EP0261652A3
EP0261652A3 EP87113881A EP87113881A EP0261652A3 EP 0261652 A3 EP0261652 A3 EP 0261652A3 EP 87113881 A EP87113881 A EP 87113881A EP 87113881 A EP87113881 A EP 87113881A EP 0261652 A3 EP0261652 A3 EP 0261652A3
Authority
EP
European Patent Office
Prior art keywords
charge
photosensitive member
layer
charge generating
generating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP87113881A
Other languages
English (en)
French (fr)
Other versions
EP0261652A2 (de
Inventor
Syuji Iino
Izumi Osawa
Hideo Hotomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Minolta Co Ltd
Original Assignee
Minolta Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP22939186A external-priority patent/JPS6381485A/ja
Priority claimed from JP22938586A external-priority patent/JPS6381479A/ja
Priority claimed from JP22938886A external-priority patent/JPS6381482A/ja
Priority claimed from JP22944986A external-priority patent/JPS6382477A/ja
Priority claimed from JP22945686A external-priority patent/JPS6382484A/ja
Application filed by Minolta Co Ltd filed Critical Minolta Co Ltd
Publication of EP0261652A2 publication Critical patent/EP0261652A2/de
Publication of EP0261652A3 publication Critical patent/EP0261652A3/de
Withdrawn legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02Charge-receiving layers
    • G03G5/04Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214Silicon-based
    • G03G5/08278Depositing methods
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02Charge-receiving layers
    • G03G5/04Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/043Photoconductive layers characterised by having two or more layers or characterised by their composite structure
    • G03G5/0433Photoconductive layers characterised by having two or more layers or characterised by their composite structure all layers being inorganic
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02Charge-receiving layers
    • G03G5/04Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214Silicon-based
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02Charge-receiving layers
    • G03G5/04Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214Silicon-based
    • G03G5/08221Silicon-based comprising one or two silicon based layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02Charge-receiving layers
    • G03G5/04Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08285Carbon-based

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
EP87113881A 1986-09-26 1987-09-23 Lichtempfindliches Element mit ladungserzeugender Schicht und eine Ladungstransportschicht Withdrawn EP0261652A3 (de)

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
JP22939186A JPS6381485A (ja) 1986-09-26 1986-09-26 感光体
JP229391/86 1986-09-26
JP229388/86 1986-09-26
JP229385/86 1986-09-26
JP22938586A JPS6381479A (ja) 1986-09-26 1986-09-26 感光体
JP229456/86 1986-09-26
JP22938886A JPS6381482A (ja) 1986-09-26 1986-09-26 感光体
JP22944986A JPS6382477A (ja) 1986-09-26 1986-09-26 感光体
JP22945686A JPS6382484A (ja) 1986-09-26 1986-09-26 感光体
JP229449/86 1986-09-26

Publications (2)

Publication Number Publication Date
EP0261652A2 EP0261652A2 (de) 1988-03-30
EP0261652A3 true EP0261652A3 (de) 1989-11-23

Family

ID=27529844

Family Applications (1)

Application Number Title Priority Date Filing Date
EP87113881A Withdrawn EP0261652A3 (de) 1986-09-26 1987-09-23 Lichtempfindliches Element mit ladungserzeugender Schicht und eine Ladungstransportschicht

Country Status (1)

Country Link
EP (1) EP0261652A3 (de)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3200376A1 (de) * 1981-01-09 1982-11-04 Canon K.K., Tokyo Fotoleitfaehiges element
JPS5912448A (ja) * 1982-07-12 1984-01-23 Ricoh Co Ltd 電子写真用感光体
US4461820A (en) * 1981-02-06 1984-07-24 Canon Kabushiki Kaisha Amorphous silicon electrophotographic image-forming member having an aluminum oxide coated substrate
US4559289A (en) * 1983-07-04 1985-12-17 Fuji Photo Film Co., Ltd. Electrophotographic light-sensitive material

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3200376A1 (de) * 1981-01-09 1982-11-04 Canon K.K., Tokyo Fotoleitfaehiges element
US4461820A (en) * 1981-02-06 1984-07-24 Canon Kabushiki Kaisha Amorphous silicon electrophotographic image-forming member having an aluminum oxide coated substrate
JPS5912448A (ja) * 1982-07-12 1984-01-23 Ricoh Co Ltd 電子写真用感光体
US4559289A (en) * 1983-07-04 1985-12-17 Fuji Photo Film Co., Ltd. Electrophotographic light-sensitive material

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN, vol. 8, no. 101 (P-273)[1538], 12th May 1984; & JP-A-59 012 448 (RICOH K.K.) 23-01-1984 *

Also Published As

Publication number Publication date
EP0261652A2 (de) 1988-03-30

Similar Documents

Publication Publication Date Title
TW350135B (en) Semiconductor device and method of manufacturing the same the invention relates to a semiconductor device and method of manufacturing the same
AU8559491A (en) Diamond neutron detector
ES8206918A1 (es) Procedimiento para la fabricacion de celulas solares de capade silicio
AU575750B2 (en) Hydrogen treatment of high nitrogen contents hydrocarbon feeds
DE3071057D1 (en) Process for reaction of epoxides with organic compounds having an active hydrogen
AU5125685A (en) Inhibition of decomposition of hydrogen peroxide systems
AU7643594A (en) Substrate for thin silicon solar cells
TW354417B (en) A method for forming a planarized dielectric layer
EP0630058A3 (de) Verfahren zur Herstellung einer Pyrodetektoranordnung durch elektronisches Ätzen eines Silizium Substrats.
ES8702084A1 (es) Caja de empalme para encapsular un substrato
EP0262570A3 (de) Lichtempfindliches Element mit ladungserzeugender Schicht und Ladungstransportschicht
EP0261653A3 (de) Lichtempfindliches Element mit ladungserzeugender Schicht und Ladungstransportschicht
GB8429440D0 (en) Siloxane imide diols & organic block polymers
AU3565784A (en) Generating an anaerobic or microaerophilic atmosphere
AU5400886A (en) Thermal reforming gaseous hydrocarbon using plasma generators
EP0261652A3 (de) Lichtempfindliches Element mit ladungserzeugender Schicht und eine Ladungstransportschicht
MY124379A (en) Semiconductor component, in particular a solar cell, and process for manufacture of same
AU2533488A (en) Anti-corrosion pigments based on alkaline earth hydrogen phosphates
EP0253279A3 (de) Lichtempfindliches Element mit einer ladungserzeugenden und einer ladungsübertragenden Schicht
EP0260677A3 (de) Lichtempfindliches Element, das eine ladungserweckende Schicht und eine Ladungstransportschicht umfasst
EP0261654A3 (de) Lichtempfindliches Element mit ladungserzeugender Schicht und Ladungstransportschicht
EP0678521A3 (de) Oberflächenbehandlungsmittel und oberflächenbehandelte Substrate
EP0260396A3 (de) Lichtempfindliches Element mit einer ladungserzeugenden und einer ladungsübertragenden Schicht
EP0252442A3 (de) Lichtempfindliches Element mit Überschicht
FI945160A (fi) Emäskatalysoitu menetelmä vetypitoisten organopolysiloksaanien valmistamiseksi

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): DE FR GB

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): DE FR GB

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 19900524

RIN1 Information on inventor provided before grant (corrected)

Inventor name: OSAWA, IZUMI

Inventor name: HOTOMI, HIDEO

Inventor name: IINO, SYUJI