EP0075221A2 - Circuit of a temperature-compensated voltage-reference source - Google Patents

Circuit of a temperature-compensated voltage-reference source Download PDF

Info

Publication number
EP0075221A2
EP0075221A2 EP82108371A EP82108371A EP0075221A2 EP 0075221 A2 EP0075221 A2 EP 0075221A2 EP 82108371 A EP82108371 A EP 82108371A EP 82108371 A EP82108371 A EP 82108371A EP 0075221 A2 EP0075221 A2 EP 0075221A2
Authority
EP
European Patent Office
Prior art keywords
circuit
voltage
temperature
transistor
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP82108371A
Other languages
German (de)
French (fr)
Other versions
EP0075221A3 (en
Inventor
Wilhelm Dr. Ing. Wilhelm
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP0075221A2 publication Critical patent/EP0075221A2/en
Publication of EP0075221A3 publication Critical patent/EP0075221A3/en
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S323/00—Electricity: power supply or regulation systems
    • Y10S323/907—Temperature compensation of semiconductor

Definitions

  • the present invention relates to a circuit arrangement for generating a temperature-independent reference voltage in the form of a bandgap circuit in which the temperature-independent reference voltage corresponding to the bandgap of the semiconductor material of the components used in the circuit can be removed on a diode resistance path.
  • Such a known bandgap circuit is shown in Fig. 1 of the drawing.
  • two branches are present, one of which by a transistor T 1 connected as a diode with a current source I 1 impressing a current and a second through a transistor T 2 connected as a diode, a resistor R lying in series therewith 2 , a multi-emitter transistor T 3 in series with this and a further resistor R 3 in series is formed.
  • a temperature-independent reference voltage U BG can be removed from the diode resistance path T 2 , R 3 , which corresponds to the band gap of the semiconductor material of the components used in the circuit. For silicon, this voltage is approximately 1.2 volts.
  • the present invention has for its object to develop a circuit of the type mentioned above such that temperature-independent reference voltages can be generated, the value of which differs from the bandgap voltage of the semiconductor material used.
  • the resistance of the diode resistance path is in the form of a series circuit of at least two resistors which is connected in parallel with a diode, and in that the temperature-independent reference voltage on one of the resistors is removable . is.
  • the transistor T 2 connected as a diode has the series connection of two resistors X and Y in parallel. In this diode resistance path is a current. source I 2 a current is fed. A temperature-independent reference voltage U BG1 can be removed from resistor X.
  • circuit arrangement according to the invention according to FIG. 2 does not differ from the previously known circuit arrangement according to FIG. 1.
  • U BE means the base-emitter voltage of the transistor T 2 connected as a diode.
  • the temperature- stable reference voltage U BG1 in the circuit arrangement according to FIG. 2 is proportional to the bandgap voltage U BG according to FIG. 1, whereby the proportionality factor is determined by the resistors of the series connection of the two resistors X and Y.
  • temperature-independent reference voltages can be set, the value of which differs from the value of the bandgap voltage.
  • FIG. 3 A use of the circuit arrangement described above with reference to FIG. 2 in a circuit arrangement for generating an output direct voltage U R free from fluctuations in a supply DC voltage U O is shown in FIG. 3. It should be noted that such a circuit arrangement for generating the voltage U R in a German Patent application from the same filing date of the applicant with the title "Circuit arrangement for generating a DC output voltage independent of fluctuations in a DC supply voltage" is described.
  • a voltage stabilization circuit 10 in the form of a series connection of a series resistor R v and a diode chain D 1 to D N is connected to a DC supply voltage U o which is subject to fluctuations.
  • a pre-stabilized voltage U v can be removed at a tap between the resistor R v and the diode chain D 1 to D N.
  • a reference voltage circuit 11 in the form of a voltage divider at the DC supply voltage U o , which consists of a constant current source in the form of a transistor T 12 (optionally with an emitter resistor) and a potential shift branch in the form of a circuit of a transistor T 11 and the bandgap circuit arrangement according to FIG. 2 is formed.
  • a Ver Reinforcement having inverting amplifier 12 driven by a transistor T 22 , a collector resistor R 22 and an emitter resistor R 23 .
  • Another transistor T 21 is switched on in the collector circuit of transistor T 22 .
  • the inverting amplifier 12 controls an output driver 13 with a transistor T 32 connected as an emitter follower.
  • a load resistor R 32 and a transistor T 33 connected as a diode are located in the emitter branch of this transistor.
  • This transistor T 33 forms with the transistor T 12 in the reference voltage circuit 11 a current mirror, so that an identical current designated I 1 flows through these two branches.
  • a transistor T 31 In the collector branch of transistor T 32 there is a transistor T 31 , the driving of which is described in more detail below.
  • the output voltage U R can be removed from the emitter of transistor T 32 of output driver 13.
  • the transistor T 21 in the inverting amplifier 12 is tapped via a resistor R 21 and the transistor T 31 'in the output driver 13 via a resistor R 31 of the voltage stabilization circuit, to which the pre-stabilized voltage U v is applied.
  • the coupling via the resistor R 21 still improves the gain in the sense of a more precise setting of the gain -1 of the inverting amplifier.
  • the transistor T 11 in the reference voltage circuit is driven via a resistor R B from the connection point of the transistors T 31 and T 32 in the output driver 13.
  • the output voltage U R is, as described in the above-mentioned German patent application by the applicant, dependent on the temperature-independent reference voltage U BG1 generated by the bandgap circuit arrangement .
  • the current source I 1 according to FIG. 2 is formed by a circuit composed of the transistors T 31 T 32 and the resistor R 32 and the current source I 2 according to FIG. 2 is formed by the transistor branch T 12 .
  • the diode T 1 of FIG. 2 is formed by the diode D 33. Since a current mirror is formed by the elements T 12 and T 33 , in the present case the currents I 1 and I 2 according to FIG. 2 are the same, ie, in the circuit arrangement according to FIG. 3, the same current I 1 flows in both branches.
  • the transistor T 2 forming a diode in the circuit arrangement according to FIG. 2 is connected somewhat differently. Its collector is led to the supply voltage U O , so that its base-emitter path in the bandgap circuit arrangement forms the diode.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)

Abstract

Bei einer Bandgap-Schaltungsanordnung ist der Widerstand einer Dioden-Widerstandsstrecke (T2, X, Y), an der eine temperaturunabhängige Referenzspannung (UBG = Bandgap-Spannung) abnehmbar ist, als Reihenschaltung mindestens zweier Widerstände (X, Y) ausgebildet, die einer Diode (T2) parallel liegt, wobei die temperaturunabhängige Referenzspannung (UBG1) an einein der Widerstände (X) abnehmbar ist.In the case of a bandgap circuit arrangement, the resistance of a diode resistance path (T2, X, Y), on which a temperature-independent reference voltage (UBG = bandgap voltage) can be removed, is designed as a series connection of at least two resistors (X, Y), that of a diode (T2) lies in parallel, the temperature-independent reference voltage (UBG1) being removable from one of the resistors (X).

Description

Die Vorliegende Erfindung betrifft eine Schaltungsanordnung zur Erzeugung einer temperaturunabhängigen Referenzspannung in Form einer Bandgap-Schaltung, in der an einer Dioden-Widerstandsstrecke die dem Bandabstand des Halbleitermaterials der in der Schaltung verwendeten Bauelemente entsprechende temperaturunabhängige Referenzspannung abnehmbar ist.The present invention relates to a circuit arrangement for generating a temperature-independent reference voltage in the form of a bandgap circuit in which the temperature-independent reference voltage corresponding to the bandgap of the semiconductor material of the components used in the circuit can be removed on a diode resistance path.

Bandgap-Schaltungen der vorstehend genannten Art sind bekannt und beispielsweise in dem Buch "Halbleiter-Schaltungstechnik" von U. Tietze und Ch. Schenk, 5. überarbeitete Auflage, Springer-Verlag, Berlin, Heidelberg, New York, 1980, S. 387 ff. und in "IEEE Journal of Solid-State Circuits," SC-7 (1972), S. 267-269 beschrieben.Bandgap circuits of the aforementioned type are known and are described, for example, in the book "Semiconductor Circuit Technology" by U. Tietze and Ch. Schenk, 5th revised edition, Springer-Verlag, Berlin, Heidelberg, New York, 1980, p. 387 ff and in "IEEE Journal of Solid-State Circuits," SC-7 (1972), pp. 267-269.

Eine derartige-bekannte Bandgap-Schaltung ist in Fig. 1 der Zeichnung dargestellt. Bei dieser Ausführungsform einer Bandgap-Schaltung sind zwei Zweige vorhanden, von denen einer durch einen als Diode geschalteten Transistor T1 mit einer einen Strom einprägenden Stromquelle I1 und ein zweiter durch einen als Diode geschalteten Transistor T2, einen in Reihe dazu liegenden Widerstand R2, einen dazu in Reihe liegenden Mehremitter-Transistor T3 sowie einen weiteren in Reihe liegenden Widerstand R3 gebildet wird. Die Basen des als Diode geschalteten Transistors T1 und des Mehremitter-Transistors T3 sind mit-Bei einer derartigen Bandgap-Schaltung ist an der Dioden-Widerstandsstrecke T2, R3 eine temperaturunabhängige Referenzspannung UBG abnehmbar, welche dem Bandabstand des Halbleitermaterials der in der Schaltung verwendeten Bauelemente entspricht. Für Silicium ist diese Spannung etwa gleich 1,2 Volt.Such a known bandgap circuit is shown in Fig. 1 of the drawing. In this embodiment of a bandgap circuit, two branches are present, one of which by a transistor T 1 connected as a diode with a current source I 1 impressing a current and a second through a transistor T 2 connected as a diode, a resistor R lying in series therewith 2 , a multi-emitter transistor T 3 in series with this and a further resistor R 3 in series is formed. The bases of the transistor T 1 connected as a diode and the multi-emitter transistor T 3 are connected In such a bandgap circuit, a temperature-independent reference voltage U BG can be removed from the diode resistance path T 2 , R 3 , which corresponds to the band gap of the semiconductor material of the components used in the circuit. For silicon, this voltage is approximately 1.2 volts.

Der vorliegenden Erfindung liegt die Aufgabe zugrunde, eine Schaltung der vorstehend genannten Art derart weiterzubilden, daß auch temperaturunabhängige Referenzspannungen erzeugbar sind, deren Wert sich von der Bandgap-Spannung des verwendeten Halbleitermaterials unterscheidet.The present invention has for its object to develop a circuit of the type mentioned above such that temperature-independent reference voltages can be generated, the value of which differs from the bandgap voltage of the semiconductor material used.

Diese Aufgabe wird bei einer Schaltungsanordnung der eingangs genannten Art erfindungsgemäß dadurch gelöst, daß der Widerstand der Dioden-Widerstandsstrecke als Reihenschaltung mindestens zweier Widerstände ausgebildet ist, die einer Diode parallel liegt, und daß die temperaturunabhängige Referenzspannung an einem der Widerstände abnehmbar.ist.This object is achieved according to the invention in a circuit arrangement of the type mentioned at the outset in that the resistance of the diode resistance path is in the form of a series circuit of at least two resistors which is connected in parallel with a diode, and in that the temperature-independent reference voltage on one of the resistors is removable . is.

-Die Erfindung wird im folgenden anhand von in den Figuren 2 und 3 der Zeichnung dargestellten Asuführungsbeispielen näher erläutert.The invention is explained in more detail below with reference to exemplary embodiments shown in FIGS. 2 and 3 of the drawing.

Es zeigt:

  • Fig. 2 ein Schaltbild einer erfindungsgemäßen Ausführungsform, wobei gleiche Elemente wie in der Schaltungsanordnung nach Fig. 1 mit gleichen Bezugszeichen versehen sind, und
  • Fig. 3 ein Schaltbild einer Schaltungsanordnung zur Erzeugung einer von Schwankungen einer Versorgungsgleichspannung freien Ausgangsgleichspannung unter Verwendung einer Bandgap-Schaltung nach Fig. 2.
It shows:
  • FIG. 2 shows a circuit diagram of an embodiment according to the invention, the same elements as in the circuit arrangement according to FIG. 1 being provided with the same reference symbols, and
  • 3 is a circuit diagram of a circuit arrangement for generating an output DC voltage free of fluctuations in a DC supply voltage using a bandgap circuit according to FIG. 2.

Im Unterschied zu der bekannten Schaltungsanordnung nach Fig. 1 liegt bei der erfindungsgemäßen Ausführungsform gemäß Fig. 2 dem als Diode geschalteten Transistor T2 die Reihenschaltung zweier Widerstände X und Y parallel. In diese Dioden-Widerstandsstrecke wird über eine Strom-. quelle I2 ein Strom eingespeist. Eine temperaturunabhängige Referenzspannung UBG1 ist am Widerstand X abnehmbar.In contrast to the known circuit arrangement according to FIG. 1, in the embodiment according to the invention according to FIG. 2, the transistor T 2 connected as a diode has the series connection of two resistors X and Y in parallel. In this diode resistance path is a current. source I 2 a current is fed. A temperature-independent reference voltage U BG1 can be removed from resistor X.

Im übrigen unterscheidet sich die erfindungsgemäße Schaltungsanordnung nach Fig. 2 nicht von der vorbekannten Schaltungsanordnung nach Fi. 1.Otherwise, the circuit arrangement according to the invention according to FIG. 2 does not differ from the previously known circuit arrangement according to FIG. 1.

Bezeichnet man den im Ausgangskreis (Kollektor-Emitter-Kreis) des Transistors T3 fließenden Strom mit IT' wie dies in.den Fig. 1 und 2 eingetragen ist, so ergibt sich für die Spannung UBG nach Fig.1:

Figure imgb0001
If the current flowing in the output circuit (collector-emitter circuit) of the transistor T 3 is denoted by I T ' as shown in FIGS. 1 and 2, the voltage U BG according to FIG. 1 results in:
Figure imgb0001

Darin bedeutet UBE die Basis-Emitter-Spannung des als Diode geschalteten Transistors T2.U BE means the base-emitter voltage of the transistor T 2 connected as a diode.

Für die Schaltung nach Fig. 2 ergibt sich für die Spannung UBG1 entsprechend:

Figure imgb0002
For the circuit according to FIG. 2, the voltage U BG1 results accordingly:
Figure imgb0002

Es zeigt sich also, daß die temperaturstabile Referenzspannung UBG1 in der Schaltungsanordnung nach Fig. 2 der Bandgap-Spannung UBG nach Fig. 1 proportional ist, wobei der Proportionalitätsfaktor durch die Widerstände der Reihenschaltung der beiden Widerstände X und Y festgelegt ist. Durch die Wahl der Widerstandswerte für die Widerstände X und Y lassen sich also temperaturunabhängige Referenzspannungen einstellen, deren Wert vom Wert der Bandgap-Spannung verschieden ist.It can thus be seen that the temperature- stable reference voltage U BG1 in the circuit arrangement according to FIG. 2 is proportional to the bandgap voltage U BG according to FIG. 1, whereby the proportionality factor is determined by the resistors of the series connection of the two resistors X and Y. By selecting the resistance values for the resistors X and Y, temperature-independent reference voltages can be set, the value of which differs from the value of the bandgap voltage.

Eine Verwendung der vorstehend anhand von Fig. 2 beschriebenen Schaltungsanordnung in einer Schaltungsanordnung zur Erzeugung einer von Schwankungen einer Versorgungsgleichspannung UO freien Ausgangsgleichspannung UR zeigt Fig. 3. Es ist zu bemerken, daß eine solche Schaltungsanordnung zur Erzeugung der Spannung UR in einer deutschen Patentanmeldung vom gleichen Anmeldetage der Anmelderin mit dem Titel " Schaltungsanordnung zur Erzeugung einer von Schwankungen einer Versorgungsgleichspannung unabhängigen Ausgangsgleichspannung" beschrieben ist.A use of the circuit arrangement described above with reference to FIG. 2 in a circuit arrangement for generating an output direct voltage U R free from fluctuations in a supply DC voltage U O is shown in FIG. 3. It should be noted that such a circuit arrangement for generating the voltage U R in a German Patent application from the same filing date of the applicant with the title "Circuit arrangement for generating a DC output voltage independent of fluctuations in a DC supply voltage" is described.

Gemäß dem Schaltbild nach der Fig. 3 der Zeichnung liegt an einer mit Schwankungen behafteten Versorgungsgleichspannung Uo ein Spannungsstabilisierungskreis 10 in Form einer Reihenschaltung eines Vorwiderstandes Rv sowie einer Diodenkette D1 bis DN. An einem Abgriff zwischen dem Widerstand Rv und der Diodenkette D1 bis DN ist eine vorstabilisierte Spannung Uv abnehmbar.According to the circuit diagram according to FIG. 3 of the drawing , a voltage stabilization circuit 10 in the form of a series connection of a series resistor R v and a diode chain D 1 to D N is connected to a DC supply voltage U o which is subject to fluctuations. A pre-stabilized voltage U v can be removed at a tap between the resistor R v and the diode chain D 1 to D N.

Weiterhin liegt an der Versorgungsgleichspannung Uo ein Referenzspannungskreis 11 in Form eines Spannungsteilers, der aus einer Konstantstromquelle in Form eines Transistors T12 (gegebenenfalls mit Emitterwiderstand) und einem Potentialverschiebungszweig in Form eines Kreises aus einem Transistor T11 und der Bandgap-Schaltungsanordnung entsprechend Fig. 2 gebildet wird.Furthermore, there is a reference voltage circuit 11 in the form of a voltage divider at the DC supply voltage U o , which consists of a constant current source in the form of a transistor T 12 (optionally with an emitter resistor) and a potential shift branch in the form of a circuit of a transistor T 11 and the bandgap circuit arrangement according to FIG. 2 is formed.

Von diesem Referenzspannungskreis 11 wird ein die Verstärkung -1 aufweisender invertierender Verstärker 12 mit einem Transistor T22, einem Kollektorwiderstand R22 und einem Emitterwiderstand R23 angesteuert. In den Kollektorkreis des Transistors T22 ist ein weiterer Transistor T21 eingeschaltet.From this reference voltage circuit 11 is a Ver Reinforcement having inverting amplifier 12 driven by a transistor T 22 , a collector resistor R 22 and an emitter resistor R 23 . Another transistor T 21 is switched on in the collector circuit of transistor T 22 .

Der invertierende Verstärker 12 steuert einen Ausgangstreiber 13 mit einem als Emitterfolger geschalteten Transistor T32 an. Im Emitterzweig dieses Transistors liegt ein Arbeitswiderstand R32 sowie ein als Diode geschalteter Transistor T33. Dieser Transistor T33 bildet mit dem Transistor T12 im Referenzspannungskreis 11 einen Stromspiegel, so daß über diese beiden Zweige ein gleicher mit I1 bezeichneter Strom fließt. Im Kollektorzweig des Transistors T32 liegt ein Transistor T31, dessen Ansteuerung im folgenden noch genauer beschrieben wird.The inverting amplifier 12 controls an output driver 13 with a transistor T 32 connected as an emitter follower. A load resistor R 32 and a transistor T 33 connected as a diode are located in the emitter branch of this transistor. This transistor T 33 forms with the transistor T 12 in the reference voltage circuit 11 a current mirror, so that an identical current designated I 1 flows through these two branches. In the collector branch of transistor T 32 there is a transistor T 31 , the driving of which is described in more detail below.

.Vom Emitter des Transistors T32 des Ausgangstreibers 13 ist die Ausgangsspannung UR abnehmbar.The output voltage U R can be removed from the emitter of transistor T 32 of output driver 13.

Um nun eine in einem weiten Bereich von der Versorgungsgleichspannung und der Bauelementeparameter unabhängige Ausgangsgleichspannung UR zu erhalten, werden der Transistor T21 im invertierenden Verstärker 12 über einen Widerstand R21 und der Transistor T31'im Ausgangstreiber 13 über einen Widerstand R31 vom Abgriff des Spannungsstabilisierungskreises angesteuert, an dem die vorstabilisierte Spannung Uv steht. Die Kopplung über den Widerstand R21 verbessert dabei noch die Verstärkung im Sinne einer genaueren'Einstellung der Verstärkung -1 des invertierenden Verstärkers.In order to obtain an output DC voltage U R that is independent of the DC supply voltage and the component parameters in a wide range, the transistor T 21 in the inverting amplifier 12 is tapped via a resistor R 21 and the transistor T 31 'in the output driver 13 via a resistor R 31 of the voltage stabilization circuit, to which the pre-stabilized voltage U v is applied. The coupling via the resistor R 21 still improves the gain in the sense of a more precise setting of the gain -1 of the inverting amplifier.

Weiterhin wird der Transistor T11 im Referenzspannungskreis über einen Widerstand RB vom Verbindungspunkt der Transistoren T31 und T32 im Ausgangstreiber 13 angesteuert. Die Ausgangsspannung UR ist, wie in der oben genannten deutschen Patentanmeldung der Anmelderin beschrieben, von der durch die Bandgap-Schaltungsanordnung erzeugten temperaturunabhängigen Referenzspannung UBG1 abhängig.Furthermore, the transistor T 11 in the reference voltage circuit is driven via a resistor R B from the connection point of the transistors T 31 and T 32 in the output driver 13. The output voltage U R is, as described in the above-mentioned German patent application by the applicant, dependent on the temperature-independent reference voltage U BG1 generated by the bandgap circuit arrangement .

In der Schaltungsanordnung nach Fig. 3 wird die Stromquelle I1 nach Fig. 2 durch Kreis aus den Transistoren T31 T32 und dem Widerstand R32 und die Stromquelle I2 nach Fig. 2 durch den Transistorzweig T12 gebildet. Die Diode T1 gemäß Fig. 2 wird durch die Diode T33 gebildet. Da durch die Elemente T12 und T33 ein Stromspiegel gebildet wird, sind im vorliegenden Fall die Ströme I1 und I2 nach Fig. 2 gleich, d. h. , in der Schaltungsanordnung nach Fig. 3 fließt in beiden Zweigen der gleiche Strom I1. In der Schaltungsanordnung nach Fig. 3 ist der in der Schaltungsanordnung nach Fig. 2 eine Diode bildende Transistor T2 etwas anders geschaltet. Sein Kollektor ist an die Versorgungsspannung UO geführt, so daß seine Basis-Emitter-Strecke in der Bandgap-Schaltungsanordnung die Diode bildet.In the circuit arrangement according to FIG. 3, the current source I 1 according to FIG. 2 is formed by a circuit composed of the transistors T 31 T 32 and the resistor R 32 and the current source I 2 according to FIG. 2 is formed by the transistor branch T 12 . The diode T 1 of FIG. 2 is formed by the diode D 33. Since a current mirror is formed by the elements T 12 and T 33 , in the present case the currents I 1 and I 2 according to FIG. 2 are the same, ie, in the circuit arrangement according to FIG. 3, the same current I 1 flows in both branches. In the circuit arrangement according to FIG. 3, the transistor T 2 forming a diode in the circuit arrangement according to FIG. 2 is connected somewhat differently. Its collector is led to the supply voltage U O , so that its base-emitter path in the bandgap circuit arrangement forms the diode.

Claims (1)

1. Schaltungsanordnung zur Erzeugung einer temperaturunabhängigen Referenzspannung in Form einer Bandgap-Schaltung, in der an einer Dioden-Widerstandsstrecke die dem Bandabstand des Halbleitermaterials der in der Schaltung verwendeten Bauelemente entsprechende temperaturunabhängige Referenzspannung abnehmbar ist, dadurch gekennzeichnet , daß der Widerstand der Dioden-Widerstandsstrecke (T2, X, Y) als Reihenschaltung mindestens zweier Widerstände (X, Y) ausgebildet ist, die einer Diode (T2) parallel liegt, und daß die temperaturunabhängige Referenzspannung (UBG1) an einem der Widerstände (X) abnehmbar ist.1. Circuit arrangement for generating a temperature-independent reference voltage in the form of a bandgap circuit in which the temperature-independent reference voltage corresponding to the bandgap of the semiconductor material of the components used in the circuit can be removed on a diode resistance path, characterized in that the resistance of the diode resistance path ( T 2 , X, Y) is designed as a series connection of at least two resistors (X, Y), which is parallel to a diode (T 2 ), and that the temperature-independent reference voltage (U BG1 ) on one of the resistors (X) can be removed .
EP82108371A 1981-09-21 1982-09-10 Circuit of a temperature-compensated voltage-reference source Withdrawn EP0075221A3 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3137504 1981-09-21
DE19813137504 DE3137504A1 (en) 1981-09-21 1981-09-21 CIRCUIT ARRANGEMENT FOR GENERATING A TEMPERATURE-INDEPENDENT REFERENCE VOLTAGE

Publications (2)

Publication Number Publication Date
EP0075221A2 true EP0075221A2 (en) 1983-03-30
EP0075221A3 EP0075221A3 (en) 1984-04-18

Family

ID=6142239

Family Applications (1)

Application Number Title Priority Date Filing Date
EP82108371A Withdrawn EP0075221A3 (en) 1981-09-21 1982-09-10 Circuit of a temperature-compensated voltage-reference source

Country Status (4)

Country Link
US (1) US4490669A (en)
EP (1) EP0075221A3 (en)
JP (1) JPS5866132A (en)
DE (1) DE3137504A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0162266A1 (en) * 1984-04-19 1985-11-27 Siemens Aktiengesellschaft Circuit generating a reference voltage independent of temperature or supply voltage
EP0182201A1 (en) * 1984-11-12 1986-05-28 Matsushita Electric Industrial Co., Ltd. Speed control apparatus for a DC motor
EP0217225B1 (en) * 1985-09-30 1991-08-28 Siemens Aktiengesellschaft Trimmable circuit generating a temperature-dependent reference voltage

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60250418A (en) * 1984-05-25 1985-12-11 Rohm Co Ltd Reference voltage circuit
JP2608871B2 (en) * 1984-09-18 1997-05-14 松下電器産業株式会社 Reference voltage generation circuit
US4604568A (en) * 1984-10-01 1986-08-05 Motorola, Inc. Current source with adjustable temperature coefficient
DE3682855D1 (en) * 1985-09-17 1992-01-23 Siemens Ag CIRCUIT ARRANGEMENT FOR THE GENERATION OF A REFERENCE VOLTAGE WITH PRESETABLE TEMPERATURE DRIFT.
JP2586136Y2 (en) * 1991-08-30 1998-12-02 松下電工株式会社 Kitchen accessory table
EP0539136B1 (en) * 1991-10-21 1998-01-21 Matsushita Electric Industrial Co., Ltd. Voltage generating device
US5793239A (en) * 1995-06-29 1998-08-11 Analog Devices, Inc. Composite load circuit
DE19621749C2 (en) * 1996-05-30 1998-07-16 Siemens Ag Circuit arrangement for generating a resistance behavior with adjustable positive temperature coefficient and use of this circuit arrangement
US8575912B1 (en) * 2012-05-21 2013-11-05 Elite Semiconductor Memory Technology Inc. Circuit for generating a dual-mode PTAT current

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3893018A (en) * 1973-12-20 1975-07-01 Motorola Inc Compensated electronic voltage source
US3970876A (en) * 1973-06-01 1976-07-20 Burroughs Corporation Voltage and temperature compensation circuitry for current mode logic

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3886435A (en) * 1973-08-03 1975-05-27 Rca Corp V' be 'voltage voltage source temperature compensation network
JPS6048765B2 (en) * 1977-12-19 1985-10-29 日本電気株式会社 Constant voltage semiconductor integrated circuit
US4249122A (en) * 1978-07-27 1981-02-03 National Semiconductor Corporation Temperature compensated bandgap IC voltage references

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3970876A (en) * 1973-06-01 1976-07-20 Burroughs Corporation Voltage and temperature compensation circuitry for current mode logic
US3893018A (en) * 1973-12-20 1975-07-01 Motorola Inc Compensated electronic voltage source

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IBM TECHNICAL DISCLOSURE BULLETIN, Band 22, Nr. 12, Mai 1980, Seite 5252, New York, US *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0162266A1 (en) * 1984-04-19 1985-11-27 Siemens Aktiengesellschaft Circuit generating a reference voltage independent of temperature or supply voltage
EP0182201A1 (en) * 1984-11-12 1986-05-28 Matsushita Electric Industrial Co., Ltd. Speed control apparatus for a DC motor
US4742281A (en) * 1984-11-12 1988-05-03 Matsushita Electric Industrial Co., Ltd. Speed control apparatus for a DC motor
EP0217225B1 (en) * 1985-09-30 1991-08-28 Siemens Aktiengesellschaft Trimmable circuit generating a temperature-dependent reference voltage

Also Published As

Publication number Publication date
DE3137504A1 (en) 1983-04-07
US4490669A (en) 1984-12-25
JPS5866132A (en) 1983-04-20
EP0075221A3 (en) 1984-04-18

Similar Documents

Publication Publication Date Title
EP0080567B1 (en) Semiconducter integrated current source
DE3713376A1 (en) COMPARATOR WITH EXTENDED INPUT CURRENT VOLTAGE RANGE
DE1813326B2 (en) Circuit arrangement for biasing the base-emitter path of a transistor by means of a temperature-dependent bias
DE69011239T2 (en) Circuit for the supply of a reference voltage.
DE3321912A1 (en) TEMPERATURE MEASURING TRANSISTOR CIRCUIT
EP0075221A2 (en) Circuit of a temperature-compensated voltage-reference source
EP0169388B1 (en) Integrated constant-current source
DE2429310C3 (en) Monolithically integrable series control circuit
DE3006598C2 (en) Voltage source
DE2501407A1 (en) COMPOSITE TRANSISTOR CIRCUIT
EP0216265B1 (en) Voltage reference generating circuit with a given temperature drift
DE3047685C2 (en) Temperature stable voltage source
DE3013172A1 (en) TRANSISTOR CIRCUIT WITH TWO COMPARISON LEVELS
DE3230429C2 (en)
DE2845761A1 (en) CIRCUIT ARRANGEMENT
DE3447002C2 (en)
DE19624676C1 (en) Circuit arrangement for generation of reference voltage
DE2339751B2 (en) Circuit arrangement for supplying a stabilized DC voltage
DE2553431A1 (en) REFERENCE SOURCE FOR GENERATING A TEMPERATURE-INDEPENDENT CURRENT
DE3824105C2 (en) Circuit arrangement for generating a stabilized output voltage
DE2408755C3 (en) Constant current source with a current that is independent of the supply voltage
EP0162266A1 (en) Circuit generating a reference voltage independent of temperature or supply voltage
DE3603799A1 (en) CURRENT MIRROR SWITCHING
DE2134774B2 (en) Circuit arrangement for stabilizing a current
DE2931525A1 (en) Differential amplifier DC working point stabiliser - uses current-mirror circuit and gain-controlled amplifier

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Designated state(s): AT DE FR GB IT

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Designated state(s): AT DE FR GB IT

17P Request for examination filed

Effective date: 19840524

17Q First examination report despatched

Effective date: 19860303

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN

18W Application withdrawn

Withdrawal date: 19890915

RIN1 Information on inventor provided before grant (corrected)

Inventor name: WILHELM, WILHELM, DR. ING.