EP0034712A3 - Integrated digital semi-conductor circuit - Google Patents

Integrated digital semi-conductor circuit Download PDF

Info

Publication number
EP0034712A3
EP0034712A3 EP81100553A EP81100553A EP0034712A3 EP 0034712 A3 EP0034712 A3 EP 0034712A3 EP 81100553 A EP81100553 A EP 81100553A EP 81100553 A EP81100553 A EP 81100553A EP 0034712 A3 EP0034712 A3 EP 0034712A3
Authority
EP
European Patent Office
Prior art keywords
conductor circuit
integrated digital
digital semi
semi
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP81100553A
Other languages
German (de)
Other versions
EP0034712B1 (en
EP0034712A2 (en
Inventor
Peter Dipl.-Ing. Rydval
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP0034712A2 publication Critical patent/EP0034712A2/en
Publication of EP0034712A3 publication Critical patent/EP0034712A3/en
Application granted granted Critical
Publication of EP0034712B1 publication Critical patent/EP0034712B1/en
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
EP81100553A 1980-02-07 1981-01-26 Integrated digital semi-conductor circuit Expired EP0034712B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3004565A DE3004565C2 (en) 1980-02-07 1980-02-07 Integrated digital semiconductor circuit
DE3004565 1980-02-07

Publications (3)

Publication Number Publication Date
EP0034712A2 EP0034712A2 (en) 1981-09-02
EP0034712A3 true EP0034712A3 (en) 1981-09-09
EP0034712B1 EP0034712B1 (en) 1984-02-08

Family

ID=6094015

Family Applications (1)

Application Number Title Priority Date Filing Date
EP81100553A Expired EP0034712B1 (en) 1980-02-07 1981-01-26 Integrated digital semi-conductor circuit

Country Status (4)

Country Link
US (1) US4400802A (en)
EP (1) EP0034712B1 (en)
JP (1) JPS56127998A (en)
DE (1) DE3004565C2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57130286A (en) * 1981-02-06 1982-08-12 Fujitsu Ltd Static semiconductor memory
FR2522432A1 (en) * 1982-02-26 1983-09-02 Radiotechnique Compelec METHOD FOR OBTAINING RAPID DISCHARGE OF MEMORY MATRIX ROW AND CORRESPONDING DYNAMIC DISCHARGE CIRCUIT
KR920006985A (en) * 1990-09-19 1992-04-28 김광호 Static load control circuit
KR960011209B1 (en) * 1993-12-02 1996-08-21 삼성전자 주식회사 Method for reducing the peak current in video ram and samblock

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3736573A (en) * 1971-11-11 1973-05-29 Ibm Resistor sensing bit switch
US3736574A (en) * 1971-12-30 1973-05-29 Ibm Pseudo-hierarchy memory system
US4005393A (en) * 1974-06-26 1977-01-25 Siemens Aktiengesellschaft Bipolar semiconductor memory with recharging circuit for capacitively loaded lines
US4164791A (en) * 1976-12-17 1979-08-14 Hitachi, Ltd. Semiconductor memory with equal word line and reference line voltage drop
US4168490A (en) * 1978-06-26 1979-09-18 Fairchild Camera And Instrument Corporation Addressable word line pull-down circuit
EP0024853A1 (en) * 1979-08-22 1981-03-11 Fujitsu Limited Semiconductor memory circuit including a hold current controlling circuit

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5247937U (en) * 1975-09-29 1977-04-05
JPS5247938U (en) * 1975-09-29 1977-04-05
JPS5341968A (en) * 1976-09-29 1978-04-15 Hitachi Ltd Semiconductor circuit
FR2443118A1 (en) * 1978-11-30 1980-06-27 Ibm France DEVICE FOR POWERING MONOLITHIC MEMORIES
US4198698A (en) * 1978-12-06 1980-04-15 Fairchild Camera And Instrument Corporation Chip select power-down control circuitry

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3736573A (en) * 1971-11-11 1973-05-29 Ibm Resistor sensing bit switch
US3736574A (en) * 1971-12-30 1973-05-29 Ibm Pseudo-hierarchy memory system
US4005393A (en) * 1974-06-26 1977-01-25 Siemens Aktiengesellschaft Bipolar semiconductor memory with recharging circuit for capacitively loaded lines
US4164791A (en) * 1976-12-17 1979-08-14 Hitachi, Ltd. Semiconductor memory with equal word line and reference line voltage drop
US4168490A (en) * 1978-06-26 1979-09-18 Fairchild Camera And Instrument Corporation Addressable word line pull-down circuit
EP0024853A1 (en) * 1979-08-22 1981-03-11 Fujitsu Limited Semiconductor memory circuit including a hold current controlling circuit

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
IEEE JOURNAL OF SOLID-STATE CIRCUIT, Band SC-13, Nr. 5, Oktober 1978, Seiten 651-656 New York, U.S.A. A. HOTTA et al.: "A high-speed low-power 4096 X 1 Bit Bipolar RAM" * Seiten 652-653, Abschnitt: "III. Cell margin increasing circuitry"; Figur 4 * *
IEEE JOURNAL OF SOLID-STATE CIRCUITS, Band SC-9, Nr. 5, Oktober 1974, seiten 283-284 New York U.S.A. H. MAYUMI et al.: "A 25-ns read access bipolar 1 kbit TTL RAM" *
IEEE TRANSACTIONS ON ELECTRON DEVICES, Band ED-26, Nr. 6, Juni New York, U.S.A. K. KAWARADA et al.: "A 4K-bit static 12L memory" *
SIEMENS FORSCHUNGS- UND ENTWICKLUNGSBERICHT, Band 6, Nr. 2, 1977, Seiten 89-91 Munchen, DE. H. ERNST et al.: "A fast bipolar 1024-bit RAM for high-performance memory systems" * Seiten 88-89, Abschnitt: "2. Circuit design"; Figur 5 * *

Also Published As

Publication number Publication date
JPS56127998A (en) 1981-10-07
US4400802A (en) 1983-08-23
DE3004565A1 (en) 1981-08-13
JPH0142079B2 (en) 1989-09-08
EP0034712B1 (en) 1984-02-08
DE3004565C2 (en) 1984-06-14
EP0034712A2 (en) 1981-09-02

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