EP0000412A3 - Junction laser - Google Patents

Junction laser Download PDF

Info

Publication number: EP0000412A3
Authority: EP; European Patent Office
Prior art keywords: junction laser; junction; laser
Prior art date: 1977-07-12
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

EP78200074A

Other versions

EP0000412A2 (en

EP0000412B1 (en

Inventor

Tullio Ernesto Rozzi

Johannes Hendrik Cornelis Van Heuven

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Koninklijke Philips NV

Original Assignee

Philips Gloeilampenfabrieken NV

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1977-07-12

Filing date

1978-07-03

Publication date

1979-02-07

1978-07-03 Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV

1979-01-24 Publication of EP0000412A2 publication Critical patent/EP0000412A2/en

1979-02-07 Publication of EP0000412A3 publication Critical patent/EP0000412A3/en

1981-03-18 Application granted granted Critical

1981-03-18 Publication of EP0000412B1 publication Critical patent/EP0000412B1/en

Status Expired legal-status Critical Current

Links

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
- H01S5/5009—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-insensitive

Landscapes

Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Electromagnetism (AREA)
Optics & Photonics (AREA)
Geometry (AREA)
Semiconductor Lasers (AREA)

EP78200074A 1977-07-12 1978-07-03 Semiconductor injection laser or intensifier Expired EP0000412B1 (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
NL7707720A NL7707720A (en)	1977-07-12	1977-07-12	SEMICONDUCTOR LASER OR AMPLIFIER.
NL7707720		1977-07-12

Publications (3)

Publication Number	Publication Date
EP0000412A2 EP0000412A2 (en)	1979-01-24
EP0000412A3 true EP0000412A3 (en)	1979-02-07
EP0000412B1 EP0000412B1 (en)	1981-03-18

Family

ID=19828859

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
EP78200074A Expired EP0000412B1 (en)	1977-07-12	1978-07-03	Semiconductor injection laser or intensifier

Country Status (7)

Country	Link
US (1)	US4376307A (en)
EP (1)	EP0000412B1 (en)
JP (1)	JPS5419688A (en)
CA (1)	CA1124375A (en)
DE (1)	DE2860540D1 (en)
IT (1)	IT1096919B (en)
NL (1)	NL7707720A (en)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5598884A (en) *	1978-12-30	1980-07-28	Fujitsu Ltd	Semiconductor light emitting device
JPS55108789A (en) *	1979-01-18	1980-08-21	Nec Corp	Semiconductor laser
JPS55123191A (en) *	1979-03-16	1980-09-22	Fujitsu Ltd	Semiconductor light emitting device
JPS5618484A (en) *	1979-07-24	1981-02-21	Nec Corp	Manufacture of semiconductor laser
JPS5627989A (en) *	1979-08-14	1981-03-18	Fujitsu Ltd	Semiconductor light emitting device
JPS5654083A (en) *	1979-10-05	1981-05-13	Nec Corp	Semiconductor laser apparatus
US4376946A (en) *	1980-11-28	1983-03-15	Bell Telephone Laboratories, Incorporated	Superluminescent LED with efficient coupling to optical waveguide
JPS5792885A (en) *	1980-12-01	1982-06-09	Sharp Corp	Semiconductor laser element
JPS57153489A (en) *	1981-03-17	1982-09-22	Sharp Corp	Manufacture of semiconductor laser element
JPS58216486A (en) *	1982-06-10	1983-12-16	Kokusai Denshin Denwa Co Ltd <Kdd>	Semiconductor laser and manufacture thereof
JPS5956785A (en) *	1982-09-24	1984-04-02	Sanyo Electric Co Ltd	Semiconductor laser
JPS6021588A (en) *	1983-07-16	1985-02-02	Univ Kyoto	Magnetoelectric photo effect photo amplifier
JPS5994485A (en) *	1983-10-24	1984-05-31	Hitachi Ltd	Semiconductor laser device
USRE34378E (en) *	1984-03-16	1993-09-14	Hitachi, Ltd.	Light emitting device with improved electrode structure to minimize short circuiting
GB2156585B (en) *	1984-03-16	1987-10-21	Hitachi Ltd	Light-emitting device electrode
US4794346A (en) *	1984-11-21	1988-12-27	Bell Communications Research, Inc.	Broadband semiconductor optical amplifier structure
JPS62260120A (en) *	1986-05-07	1987-11-12	Kokusai Denshin Denwa Co Ltd <Kdd>	Semiconductor external light modulator
US4772854A (en) *	1986-12-24	1988-09-20	Bell Communications Research, Inc.	All optical repeater
JPH0410705Y2 (en) *	1987-06-22	1992-03-17
CA1292040C (en) *	1988-08-26	1991-11-12	Gadi Eisenstein	Semiconductor optical amplifier with shortened gain recovery time
US5019787A (en) *	1989-10-30	1991-05-28	David Sarnoff Research Center, Inc.	Optical amplifier
US5131001A (en) *	1990-12-21	1992-07-14	David Sarnoff Research Center, Inc.	Monolithic semiconductor light emitter and amplifier
US5337176A (en) *	1992-03-25	1994-08-09	U. S. Philips Corporation	Optical amplifier with improved linearity

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS51138393A (en) *	1975-05-26	1976-11-29	Fujitsu Ltd	Semiconductor light emission device
US3978428A (en) *	1975-06-23	1976-08-31	Xerox Corporation	Buried-heterostructure diode injection laser
JPS609355B2 (en) *	1975-08-30	1985-03-09	富士通株式会社	Manufacturing method of semiconductor light emitting device
JPS5245296A (en) *	1975-10-07	1977-04-09	Nippon Telegr & Teleph Corp <Ntt>	Semiconductive phototransmission pass and semiconductor emission devic e used it
JPS5286093A (en) *	1976-01-12	1977-07-16	Hitachi Ltd	Striped semiconductor laser
US4099999A (en) *	1977-06-13	1978-07-11	Xerox Corporation	Method of making etched-striped substrate planar laser
GB2046983B (en) *	1979-01-18	1983-03-16	Nippon Electric Co	Semiconductor lasers

1977
- 1977-07-12 NL NL7707720A patent/NL7707720A/en not_active Application Discontinuation
1978
- 1978-07-03 EP EP78200074A patent/EP0000412B1/en not_active Expired
- 1978-07-03 DE DE7878200074T patent/DE2860540D1/en not_active Expired
- 1978-07-05 CA CA306,840A patent/CA1124375A/en not_active Expired
- 1978-07-07 IT IT25470/78A patent/IT1096919B/en active
- 1978-07-10 JP JP8390178A patent/JPS5419688A/en active Granted
1980
- 1980-05-15 US US06/150,270 patent/US4376307A/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
US4376307A (en)	1983-03-08
IT7825470A0 (en)	1978-07-07
JPS5419688A (en)	1979-02-14
IT1096919B (en)	1985-08-26
CA1124375A (en)	1982-05-25
EP0000412A2 (en)	1979-01-24
DE2860540D1 (en)	1981-04-16
JPS5755309B2 (en)	1982-11-24
EP0000412B1 (en)	1981-03-18
NL7707720A (en)	1979-01-16

Legal Events

Date	Code	Title	Description
1978-11-28	PUAI	Public reference made under article 153(3) epc to a published international application that has entered the european phase	Free format text: ORIGINAL CODE: 0009012
1978-11-30	PUAL	Search report despatched	Free format text: ORIGINAL CODE: 0009013
1979-01-24	AK	Designated contracting states	Designated state(s): DE FR GB NL SE
1979-02-07	AK	Designated contracting states	Designated state(s): DE FR GB NL SE
1979-05-16	17P	Request for examination filed
1981-01-19	GRAA	(expected) grant	Free format text: ORIGINAL CODE: 0009210
1981-03-18	AK	Designated contracting states	Designated state(s): DE FR GB NL SE
1981-04-16	REF	Corresponds to:	Ref document number: 2860540 Country of ref document: DE Date of ref document: 19810416
1981-07-04	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: SE Effective date: 19810704
1982-02-01	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: NL Effective date: 19820201
1982-03-16	NLV4	Nl: lapsed or anulled due to non-payment of the annual fee	Effective date: 19820201
1995-01-31	EUG	Se: european patent has lapsed	Ref document number: 78200074.9 Effective date: 19820209
1995-06-09	REG	Reference to a national code	Ref country code: FR Ref legal event code: CD
1996-07-01	PGFP	Annual fee paid to national office [announced via postgrant information from national office to epo]	Ref country code: GB Payment date: 19960701 Year of fee payment: 19
1996-07-24	PGFP	Annual fee paid to national office [announced via postgrant information from national office to epo]	Ref country code: FR Payment date: 19960724 Year of fee payment: 19
1996-09-24	PGFP	Annual fee paid to national office [announced via postgrant information from national office to epo]	Ref country code: DE Payment date: 19960924 Year of fee payment: 19
1997-07-03	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: GB Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 19970703
1998-02-25	GBPC	Gb: european patent ceased through non-payment of renewal fee	Effective date: 19970703
1998-03-31	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: FR Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 19980331
1998-04-01	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: DE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 19980401
1998-05-29	REG	Reference to a national code	Ref country code: FR Ref legal event code: ST
2016-09-14	PLBE	No opposition filed within time limit	Free format text: ORIGINAL CODE: 0009261
2016-09-14	STAA	Information on the status of an ep patent application or granted ep patent	Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

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