DK2425685T3 - In-situ-plasma/laser-hybridsystem - Google Patents
In-situ-plasma/laser-hybridsystem Download PDFInfo
- Publication number
- DK2425685T3 DK2425685T3 DK10770480.1T DK10770480T DK2425685T3 DK 2425685 T3 DK2425685 T3 DK 2425685T3 DK 10770480 T DK10770480 T DK 10770480T DK 2425685 T3 DK2425685 T3 DK 2425685T3
- Authority
- DK
- Denmark
- Prior art keywords
- plasma
- precursor
- cathode
- plasma device
- layer
- Prior art date
Links
- 239000002243 precursor Substances 0.000 claims description 78
- 238000000576 coating method Methods 0.000 claims description 54
- 239000011248 coating agent Substances 0.000 claims description 38
- 239000000463 material Substances 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 34
- 238000000151 deposition Methods 0.000 claims description 25
- 230000008021 deposition Effects 0.000 claims description 21
- 239000007788 liquid Substances 0.000 claims description 20
- 239000000843 powder Substances 0.000 claims description 19
- 238000011065 in-situ storage Methods 0.000 claims description 10
- 238000002844 melting Methods 0.000 claims description 10
- 230000008018 melting Effects 0.000 claims description 10
- 238000000280 densification Methods 0.000 claims description 7
- 239000002105 nanoparticle Substances 0.000 claims description 7
- 238000011144 upstream manufacturing Methods 0.000 claims description 6
- 230000005855 radiation Effects 0.000 claims description 3
- 230000035939 shock Effects 0.000 claims description 3
- 238000004891 communication Methods 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims 2
- 239000012530 fluid Substances 0.000 claims 1
- 210000002381 plasma Anatomy 0.000 description 97
- 239000002245 particle Substances 0.000 description 35
- 210000004027 cell Anatomy 0.000 description 23
- 238000004519 manufacturing process Methods 0.000 description 18
- 238000013459 approach Methods 0.000 description 17
- 239000007789 gas Substances 0.000 description 16
- 230000008569 process Effects 0.000 description 16
- 238000002347 injection Methods 0.000 description 14
- 239000007924 injection Substances 0.000 description 14
- 239000012705 liquid precursor Substances 0.000 description 12
- 238000012545 processing Methods 0.000 description 12
- 239000007787 solid Substances 0.000 description 10
- 239000000446 fuel Substances 0.000 description 9
- 238000001878 scanning electron micrograph Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
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- 239000000758 substrate Substances 0.000 description 8
- 239000003792 electrolyte Substances 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000003786 synthesis reaction Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 229910001416 lithium ion Inorganic materials 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 239000002086 nanomaterial Substances 0.000 description 4
- 239000000725 suspension Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
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- 238000010438 heat treatment Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 229910032387 LiCoO2 Inorganic materials 0.000 description 2
- 229910052493 LiFePO4 Inorganic materials 0.000 description 2
- GNTDGMZSJNCJKK-UHFFFAOYSA-N Vanadium(V) oxide Inorganic materials O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- 238000000889 atomisation Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000002028 premature Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000007669 thermal treatment Methods 0.000 description 2
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- 229910006174 NixCo1−2xMnx Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910021627 Tin(IV) chloride Inorganic materials 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000006194 liquid suspension Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000009718 spray deposition Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- 150000003623 transition metal compounds Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 description 1
- 239000011592 zinc chloride Substances 0.000 description 1
- 235000005074 zinc chloride Nutrition 0.000 description 1
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/42—Plasma torches using an arc with provisions for introducing materials into the plasma, e.g. powder, liquid
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K5/00—Irradiation devices
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/34—Details, e.g. electrodes, nozzles
- H05H1/3478—Geometrical details
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Coating By Spraying Or Casting (AREA)
- Chemical Vapour Deposition (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Claims (15)
1. Jævnstrømsplasmasindretning, omfattende: et hus (12); en katode (14, 14'), der er anbragt i huset (12); en ringformet kanal (18), der generelt anbringes grænsende op til katoden (14, 14'), hvor den ringformede kanal (18) er konfigureret til at overføre en plasmagas (20) som fluid; en anode (16), der er anbragt driftsmæssigt grænsende op til katoden (14, 14') for at tillade en elektrisk kommunikation derimellem, som er tilstrækkelig til at antænde en plasmastråle (24) i plasmagassen (20); en prækursorkilde, som indeholder et prækursormateriale; en prækursorudledningsledning (30), som strækker sig gennem mindst en del af katoden (14, 14'), hvor prækursorudledningsledningen (30) afsluttes ved mindst én åbning (34), hvor plasmastrålen (24) er i stand til at medføre, smelte og afsætte i det mindst en del af prækursormaterialerne på et mål; kendetegnet ved, at den mindst én åbning (34) er forskudt fra en spids (28) af katoden (14, 14') for generelt at forhindre afsætning af prækursormateria-let ved spidsen (28) af katoden (14,14').
2. Jævnstrømsplasmasindretning ifølge krav 1, hvor den mindst én åbning (34) er forskudt opstrøms for spidsen (28) af katoden (14, 14') og uden for plasmastrålen (24).
3. Jævnstrømsplasmasindretning ifølge krav 1, hvor den mindst én åbning (34) er forskudt nedstrøms for spidsen (28) og strækker sig ud over spidsen (28) og ind i plasmastrålen (24).
4. Jævnstrømsplasmasindretning ifølge krav 1, hvor prækursormaterialet omfatter nanopartikler.
5. Jævnstrømsplasmasindretning ifølge krav 1, hvor prækursormaterialet er et pulver.
6. Jævnstrømsplasmasindretning ifølge krav 1, yderligere omfattende: en dyse (48), gennem hvilken plasmastrålen (24) overføres.
7. Jævnstrømsplasmasindretning ifølge krav 6, hvor dysen (48) er cirkulær, ellipseformet eller rektangulær.
8. Jævnstrømsplasmasindretning ifølge krav 1, hvor en prækursorudledningsenhed er funktionsmæssigt tilkoblet ved en position nedstrøms foranoden (16), hvor prækursorudledningsenheden modtager prækursormaterialet fra prækursorkilden og forstøver prækursormaterialet sammen med en gas ind i plasmastrålen (24).
9. Jævnstrømsplasmasindretning ifølge krav 1 eller 8, yderligere omfattende: en laserkilde (50), som udleder strålingsenergi på målet efter afsætning af i det mindste en del af prækursormaterialerne.
10. Jævnstrømsplasmasindretning ifølge krav 9, hvor laserkilden (50) ændrer en fortætning af mindst en del af prækursormaterialerne, der er afsat på målet.
11. Jævnstrømsplasmasindretning ifølge krav 1 eller 8, hvor prækursormaterialet er en væske eller en gas.
12. Fremgangsmåde til dannelse af en coating på et mål under anvendelse af en indretning (10) ifølge krav 1, hvor fremgangsmåden omfatter: afsætning af et første lag på et mål under anvendelse af jævnstrømsplasmaindretningen ved at sprøjte et plasma, som har indlagte prækursorer; omsmeltning af mindst en del af det første lag under anvendelse af en laserkilde for at opnå in-situ-fortætning deraf.
13. Fremgangsmåde ifølge krav 12, yderligere omfattende: afsætning af et andet lag på det fortættede første lag af målet under anvendelse af jævnstrømsplasmaindretningen ved at sprøjte plasmaet med de indlagte prækursorer.
14. Fremgangsmåde ifølge krav 13, yderligere omfattende: omsmeltning af mindst en del af det andet lag under anvendelse af en laserkilde (50) for at opnå in-situ-fortætning deraf.
15. Fremgangsmåde ifølge krav 12, hvor en laserstrålebølgelængde og effekt af laserkilden (50) udvælges til at graduere tykkelsen på tværs af det første lag for at forbedre varmechokbestandigheden.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17457609P | 2009-05-01 | 2009-05-01 | |
US23386309P | 2009-08-14 | 2009-08-14 | |
US12/772,342 US8294060B2 (en) | 2009-05-01 | 2010-05-03 | In-situ plasma/laser hybrid scheme |
PCT/US2010/033383 WO2010127344A2 (en) | 2009-05-01 | 2010-05-03 | In-situ plasma/laser hybrid scheme |
Publications (1)
Publication Number | Publication Date |
---|---|
DK2425685T3 true DK2425685T3 (en) | 2017-01-30 |
Family
ID=43032818
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK10770480.1T DK2425685T3 (en) | 2009-05-01 | 2010-05-03 | In-situ-plasma/laser-hybridsystem |
Country Status (10)
Country | Link |
---|---|
US (1) | US8294060B2 (da) |
EP (1) | EP2425685B1 (da) |
KR (1) | KR20120036817A (da) |
CN (1) | CN102450108B (da) |
AU (1) | AU2010242747B2 (da) |
CA (1) | CA2760612A1 (da) |
DK (1) | DK2425685T3 (da) |
ES (1) | ES2607704T3 (da) |
NZ (1) | NZ596174A (da) |
WO (1) | WO2010127344A2 (da) |
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US8574408B2 (en) | 2007-05-11 | 2013-11-05 | SDCmaterials, Inc. | Fluid recirculation system for use in vapor phase particle production system |
US8575059B1 (en) | 2007-10-15 | 2013-11-05 | SDCmaterials, Inc. | Method and system for forming plug and play metal compound catalysts |
KR101770576B1 (ko) * | 2009-12-04 | 2017-08-23 | 더 리젠츠 오브 더 유니버시티 오브 미시건 | 동축 레이저 보조형 콜드 스프레이 노즐 |
US8803025B2 (en) * | 2009-12-15 | 2014-08-12 | SDCmaterials, Inc. | Non-plugging D.C. plasma gun |
US8557727B2 (en) | 2009-12-15 | 2013-10-15 | SDCmaterials, Inc. | Method of forming a catalyst with inhibited mobility of nano-active material |
US9119309B1 (en) | 2009-12-15 | 2015-08-25 | SDCmaterials, Inc. | In situ oxide removal, dispersal and drying |
US9126191B2 (en) | 2009-12-15 | 2015-09-08 | SDCmaterials, Inc. | Advanced catalysts for automotive applications |
US8652992B2 (en) | 2009-12-15 | 2014-02-18 | SDCmaterials, Inc. | Pinning and affixing nano-active material |
US9149797B2 (en) | 2009-12-15 | 2015-10-06 | SDCmaterials, Inc. | Catalyst production method and system |
US8669202B2 (en) | 2011-02-23 | 2014-03-11 | SDCmaterials, Inc. | Wet chemical and plasma methods of forming stable PtPd catalysts |
US9605376B2 (en) * | 2011-06-28 | 2017-03-28 | Mtix Ltd. | Treating materials with combined energy sources |
US9309619B2 (en) * | 2011-06-28 | 2016-04-12 | Mtix Ltd. | Method and apparatus for surface treatment of materials utilizing multiple combined energy sources |
MX2014001718A (es) | 2011-08-19 | 2014-03-26 | Sdcmaterials Inc | Sustratos recubiertos para uso en catalisis y convertidores cataliticos y metodos para recubrir sustratos con composiciones de recubrimiento delgado. |
ZA201202480B (en) * | 2011-10-17 | 2012-11-28 | Int Advanced Res Centre For Power Metallurgy And New Mat (Arci) Dept Of Science And Tech Govt Of Ind | An improved hybrid methodology for producing composite,multi-layered and graded coatings by plasma spraying utitilizing powder and solution precurrsor feedstock |
US9156025B2 (en) | 2012-11-21 | 2015-10-13 | SDCmaterials, Inc. | Three-way catalytic converter using nanoparticles |
US9511352B2 (en) | 2012-11-21 | 2016-12-06 | SDCmaterials, Inc. | Three-way catalytic converter using nanoparticles |
WO2015013545A1 (en) | 2013-07-25 | 2015-01-29 | SDCmaterials, Inc. | Washcoats and coated substrates for catalytic converters |
JP2016535664A (ja) | 2013-10-22 | 2016-11-17 | エスディーシーマテリアルズ, インコーポレイテッド | リーンNOxトラップの組成物 |
MX2016004991A (es) | 2013-10-22 | 2016-08-01 | Sdcmaterials Inc | Diseño de catalizador para motores de combustion diesel de servicio pesado. |
CN106470752A (zh) | 2014-03-21 | 2017-03-01 | Sdc材料公司 | 用于被动nox吸附(pna)***的组合物 |
US10730798B2 (en) * | 2014-05-07 | 2020-08-04 | Applied Materials, Inc. | Slurry plasma spray of plasma resistant ceramic coating |
GB201409692D0 (en) * | 2014-05-31 | 2014-07-16 | Element Six Gmbh | Thermal spray assembly and method for using it |
DE102014219275A1 (de) * | 2014-09-24 | 2016-03-24 | Siemens Aktiengesellschaft | Zündung von Flammen eines elektropositiven Metalls durch Plasmatisierung des Reaktionsgases |
CN105376921A (zh) * | 2015-12-11 | 2016-03-02 | 武汉科技大学 | 一种等离子加工用的内腔供粉钨针 |
CN111790334B (zh) * | 2016-01-05 | 2021-12-03 | 螺旋株式会社 | 涡水流产生器、水等离子体产生装置、分解处理装置 |
US20170291856A1 (en) * | 2016-04-06 | 2017-10-12 | Applied Materials, Inc. | Solution precursor plasma spray of ceramic coating for semiconductor chamber applications |
CN111100979B (zh) * | 2019-12-26 | 2021-06-22 | 上海联影医疗科技股份有限公司 | X射线管阳极靶盘的激光冲击强化方法 |
CN115537737B (zh) * | 2022-10-13 | 2023-11-17 | 西南交通大学 | 一种薄涂层的制备方法及*** |
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-
2010
- 2010-05-03 KR KR1020117028861A patent/KR20120036817A/ko not_active Application Discontinuation
- 2010-05-03 AU AU2010242747A patent/AU2010242747B2/en active Active
- 2010-05-03 DK DK10770480.1T patent/DK2425685T3/en active
- 2010-05-03 WO PCT/US2010/033383 patent/WO2010127344A2/en active Application Filing
- 2010-05-03 EP EP10770480.1A patent/EP2425685B1/en active Active
- 2010-05-03 NZ NZ596174A patent/NZ596174A/xx unknown
- 2010-05-03 ES ES10770480.1T patent/ES2607704T3/es active Active
- 2010-05-03 US US12/772,342 patent/US8294060B2/en active Active
- 2010-05-03 CN CN201080024186.4A patent/CN102450108B/zh active Active
- 2010-05-03 CA CA2760612A patent/CA2760612A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
ES2607704T3 (es) | 2017-04-03 |
CN102450108B (zh) | 2014-08-20 |
US8294060B2 (en) | 2012-10-23 |
CN102450108A (zh) | 2012-05-09 |
WO2010127344A3 (en) | 2011-01-13 |
CA2760612A1 (en) | 2010-11-04 |
EP2425685B1 (en) | 2016-10-26 |
NZ596174A (en) | 2013-07-26 |
KR20120036817A (ko) | 2012-04-18 |
AU2010242747B2 (en) | 2014-03-20 |
US20100320176A1 (en) | 2010-12-23 |
EP2425685A4 (en) | 2014-11-26 |
AU2010242747A1 (en) | 2011-11-24 |
EP2425685A2 (en) | 2012-03-07 |
WO2010127344A2 (en) | 2010-11-04 |
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