DK0756331T3 - Strømbegrænserelement og fremgangsmåde til fremstilling heraf - Google Patents
Strømbegrænserelement og fremgangsmåde til fremstilling herafInfo
- Publication number
- DK0756331T3 DK0756331T3 DK96420258T DK96420258T DK0756331T3 DK 0756331 T3 DK0756331 T3 DK 0756331T3 DK 96420258 T DK96420258 T DK 96420258T DK 96420258 T DK96420258 T DK 96420258T DK 0756331 T3 DK0756331 T3 DK 0756331T3
- Authority
- DK
- Denmark
- Prior art keywords
- manufacture
- current limiting
- limiting element
- current
- limiting
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
Landscapes
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Tone Control, Compression And Expansion, Limiting Amplitude (AREA)
- Emergency Protection Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9509442A FR2737343B1 (fr) | 1995-07-28 | 1995-07-28 | Composant limiteur de courant et procede de realisation |
Publications (1)
Publication Number | Publication Date |
---|---|
DK0756331T3 true DK0756331T3 (da) | 2000-05-01 |
Family
ID=9481668
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK96420258T DK0756331T3 (da) | 1995-07-28 | 1996-07-26 | Strømbegrænserelement og fremgangsmåde til fremstilling heraf |
Country Status (7)
Country | Link |
---|---|
US (1) | US5696390A (da) |
EP (1) | EP0756331B1 (da) |
DE (1) | DE69605615T2 (da) |
DK (1) | DK0756331T3 (da) |
ES (1) | ES2140049T3 (da) |
FR (1) | FR2737343B1 (da) |
PT (1) | PT756331E (da) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2789519B1 (fr) * | 1999-02-05 | 2003-03-28 | Commissariat Energie Atomique | Transistor mos a tension de seuil dynamique equipe d'un limiteur de courant, et procede de realisation d'un tel transistor |
US6501630B1 (en) | 1999-12-17 | 2002-12-31 | Koninklijke Philips Electronics N.V. | Bi-directional ESD diode structure |
US6674129B1 (en) * | 1999-12-17 | 2004-01-06 | Koninklijke Phillips Electronics N.V. | ESD diode structure |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL239104A (da) * | 1958-05-26 | 1900-01-01 | Western Electric Co | |
NL251532A (da) * | 1959-06-17 | |||
US3175934A (en) * | 1960-01-19 | 1965-03-30 | Hitachi Ltd | Semiconductor switching element and process for producing the same |
US3093755A (en) * | 1960-07-07 | 1963-06-11 | Mallory & Co Inc P R | Semiconductor diode exhibiting differential negative resistance |
NL131695C (da) * | 1960-07-19 | |||
DE1614440A1 (de) * | 1967-03-08 | 1970-07-16 | Siemens Ag | Thyristor |
FR2458905A1 (fr) * | 1979-06-06 | 1981-01-02 | Silicium Semiconducteur Ssc | Diode de shockley et son procede de fabrication |
JPH0638508B2 (ja) * | 1988-05-12 | 1994-05-18 | 工業技術院長 | 半導体サージ保護素子 |
JP2751103B2 (ja) * | 1988-06-21 | 1998-05-18 | シーメンス、アクチエンゲゼルシヤフト | ダイオード |
DE3931589A1 (de) * | 1989-09-22 | 1991-04-04 | Bosch Gmbh Robert | Halbleiterschaltelement |
US5483086A (en) * | 1993-04-20 | 1996-01-09 | Shindengen Electric Manufacturing Co., Ltd. | Four layer semiconductor surge protector having plural short-circuited junctions |
-
1995
- 1995-07-28 FR FR9509442A patent/FR2737343B1/fr not_active Expired - Fee Related
-
1996
- 1996-07-26 DK DK96420258T patent/DK0756331T3/da active
- 1996-07-26 ES ES96420258T patent/ES2140049T3/es not_active Expired - Lifetime
- 1996-07-26 DE DE69605615T patent/DE69605615T2/de not_active Expired - Fee Related
- 1996-07-26 EP EP96420258A patent/EP0756331B1/fr not_active Expired - Lifetime
- 1996-07-26 PT PT96420258T patent/PT756331E/pt unknown
- 1996-07-29 US US08/688,156 patent/US5696390A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0756331A1 (fr) | 1997-01-29 |
DE69605615T2 (de) | 2000-05-31 |
PT756331E (pt) | 2000-06-30 |
FR2737343A1 (fr) | 1997-01-31 |
DE69605615D1 (de) | 2000-01-20 |
EP0756331B1 (fr) | 1999-12-15 |
FR2737343B1 (fr) | 1997-10-24 |
US5696390A (en) | 1997-12-09 |
ES2140049T3 (es) | 2000-02-16 |
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