DE971357C - Process for the oxidation of the surface of crystalline selenium layers of selenium rectifier plates - Google Patents
Process for the oxidation of the surface of crystalline selenium layers of selenium rectifier platesInfo
- Publication number
- DE971357C DE971357C DEP4869A DEP0004869A DE971357C DE 971357 C DE971357 C DE 971357C DE P4869 A DEP4869 A DE P4869A DE P0004869 A DEP0004869 A DE P0004869A DE 971357 C DE971357 C DE 971357C
- Authority
- DE
- Germany
- Prior art keywords
- selenium
- oxidation
- crystalline
- nitrogen dioxide
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 title claims description 19
- 229910052711 selenium Inorganic materials 0.000 title claims description 19
- 239000011669 selenium Substances 0.000 title claims description 19
- 238000000034 method Methods 0.000 title claims description 8
- 230000003647 oxidation Effects 0.000 title claims description 5
- 238000007254 oxidation reaction Methods 0.000 title claims description 5
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 claims description 7
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 238000004870 electrical engineering Methods 0.000 claims 1
- JPJALAQPGMAKDF-UHFFFAOYSA-N selenium dioxide Chemical compound O=[Se]=O JPJALAQPGMAKDF-UHFFFAOYSA-N 0.000 description 18
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 3
- 229910052716 thallium Inorganic materials 0.000 description 3
- 241000589614 Pseudomonas stutzeri Species 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000003679 aging effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
- H01L21/105—Treatment of the surface of the selenium or tellurium layer after having been made conductive
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
Description
Verfahren zur Oxydation der Oberfläche kristalliner Selenschichten von Selengleichrichterplatten Die Erfindung bezieht sich auf ein Verfahren zur Herstellung von Selengleichrichtern, bei dem vor dem Aufbringen einer thalliumfreien Elektrode die kristalline Selenoberfläche oxydiert wird.Process for the oxidation of the surface of crystalline selenium layers of selenium rectifier plates The invention relates to a method of manufacture of selenium rectifiers, in which before applying a thallium-free electrode the crystalline selenium surface is oxidized.
Gleichrichter, die aus einer auf eine Trägerplatte aufgebrachten Selenschicht bestehen, zeigen ein günstiges Sperrverhalten, wenn die kristallisierte Selenoberfläche vor dem Aufbringen der Gegenelektrode mit einer dünnen Selendioxydschicht überzogen wird.Rectifiers made from a selenium layer applied to a carrier plate exist, show a favorable barrier behavior when the crystallized selenium surface coated with a thin layer of selenium dioxide before applying the counter electrode will.
Zu diesem Zweck hat man bereits vorgeschlagen, diese Selendioxydschicht durch Aufsublimieren von Selendioxyd zu erzeugen. Das hierbei aus der Dampfphase niedergeschlagene Selendioxyd bedeckt die Selenoberfläche jedoch nicht lückenlos. An einzelnen Punkten bilden sich bevorzugt nadelförmige Kristalle, und die dazwischenliegende Selenoberfläche bleibt unbedeckt.This selenium dioxide layer has already been proposed for this purpose to produce by subliming selenium dioxide. This from the vapor phase However, precipitated selenium dioxide does not completely cover the selenium surface. Needle-shaped crystals form preferentially at individual points, and those in between The selenium surface remains uncovered.
Es ist ferner vorgeschlagen worden, bei Selengleichrichtern, deren Deckelektrode Thallium enthält, die durch diesen Zusatz bedingten Alterungserscheinungen dadurch zu vermeiden, daB dem Selen ein Stoff zugefügt wird, der das Thallium ganz oder teilweise chemisch bindet. Diesem Zweck kann beispielsweise Selendioxyd dienen. An Stelle dem Selen das Selendioxyd zuzusetzen, kann dieses auch durch ein Oxydationsmittel, wie z. B. Stickstoffdioxyd, auf der Selenoberfläche erzeugt werden.It has also been proposed, in selenium rectifiers, their Cover electrode contains thallium, the aging effects caused by this additive by adding a substance to the selenium that would completely remove the thallium or partially chemically binds. Selenium dioxide, for example, can serve this purpose. Instead of adding selenium dioxide, this can also be done by an oxidizing agent, such as B. nitrogen dioxide, are generated on the selenium surface.
Die Erfindung bezieht sich, wie schon oben angegeben, auf Selengleichrichter mit thalliumfreier Elektrode und dient deshalb nicht zur Beseitigung von Alterungserscheinungen infolge eines solchen Thalliumzusatzes, sondern zur Verbesserung anderer Eigenschaften der Gleichrichterplatte.As already indicated above, the invention relates to selenium rectifiers with a thallium-free electrode and is therefore not used to remove Signs of aging as a result of such an addition of thallium, but to improve other properties the rectifier plate.
Die Erfindung selbst besteht darin, daß die Oxydation in einer stickstoffdioxydhaltigen Atmosphäre vorgenommen wird.The invention itself consists in the fact that the oxidation in a nitrogen dioxide-containing Atmosphere is made.
Durch das Verfahren nach der Erfindung wird die oberste Schicht des Selens unter der Sauerstoffeinwirkung in Selendioxyd verwandelt. Es bildet sich auf der Selenoberfläche eine genau dosierbare, lückenlose Schicht Selendioxyd. Die Stärke der Schicht hängt von der Intensität und der Dauer der Oxydation ab. Vorteilhaft verwendet man eine Konzentration unter I mg Stickstoffdioxyd pro cm3, insbesondere eine Konzentration von etwa o,I mg/cm3. Die Verweilzeit in dieser Atmosphäre beträgt einige Minuten, sie muß durch Versuche einmal festgelegt werden. Die Stickstoffdioxydkonzentration kann durch kolorimetrische oder andere bekannte Meßverfahren kontrolliert werden.By the method according to the invention, the top layer of the Selenium is transformed into selenium dioxide under the action of oxygen. It forms on the selenium surface a precisely metered, gapless layer of selenium dioxide. the The thickness of the layer depends on the intensity and duration of the oxidation. Advantageous a concentration below 1 mg nitrogen dioxide per cm3 is used, in particular a concentration of about 0.1 mg / cm3. The residence time in this atmosphere is a few minutes, it must be determined once by experiment. The nitrogen dioxide concentration can be controlled by colorimetric or other known measuring methods.
Nach der Erfindung oxydierte Selenscheiben erfordern im Vergleich zu Scheiben, deren Selendioxyd schicht aufsublimiert wurde, nur die halbe Zeit zur elektrischen Formierung. Ferner ist der während der Sperrzeit auftretende Rückstrom nur halb so groß wie bei den nach dem bisherigen Verfahren hergestellten Scheiben.Selenium disks oxidized according to the invention require comparison to panes with a layer of selenium dioxide that has been sublimed on, only half the time electrical formation. Furthermore, the reverse current occurring during the blocking time is only half the size of the panes produced using the previous method.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEP4869A DE971357C (en) | 1948-10-01 | 1948-10-01 | Process for the oxidation of the surface of crystalline selenium layers of selenium rectifier plates |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEP4869A DE971357C (en) | 1948-10-01 | 1948-10-01 | Process for the oxidation of the surface of crystalline selenium layers of selenium rectifier plates |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE971357C true DE971357C (en) | 1959-01-15 |
Family
ID=7359663
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEP4869A Expired DE971357C (en) | 1948-10-01 | 1948-10-01 | Process for the oxidation of the surface of crystalline selenium layers of selenium rectifier plates |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE971357C (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE967323C (en) * | 1943-08-06 | 1957-11-07 | Siemens Ag | Process for the production of selenium rectifiers, the top electrode of which is thallium added in small quantities |
-
1948
- 1948-10-01 DE DEP4869A patent/DE971357C/en not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE967323C (en) * | 1943-08-06 | 1957-11-07 | Siemens Ag | Process for the production of selenium rectifiers, the top electrode of which is thallium added in small quantities |
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