DE9319416U1 - Effective light emission diodes with modified window layers - Google Patents

Effective light emission diodes with modified window layers

Info

Publication number
DE9319416U1
DE9319416U1 DE9319416U DE9319416U DE9319416U1 DE 9319416 U1 DE9319416 U1 DE 9319416U1 DE 9319416 U DE9319416 U DE 9319416U DE 9319416 U DE9319416 U DE 9319416U DE 9319416 U1 DE9319416 U1 DE 9319416U1
Authority
DE
Germany
Prior art keywords
light emission
effective light
window layers
emission diodes
modified window
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE9319416U
Other languages
German (de)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HUANG KUO-HSIN HSINCHU TW
Original Assignee
HUANG KUO-HSIN HSINCHU TW
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HUANG KUO-HSIN HSINCHU TW filed Critical HUANG KUO-HSIN HSINCHU TW
Priority to DE9319416U priority Critical patent/DE9319416U1/en
Publication of DE9319416U1 publication Critical patent/DE9319416U1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
DE9319416U 1993-12-04 1993-12-04 Effective light emission diodes with modified window layers Expired - Lifetime DE9319416U1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE9319416U DE9319416U1 (en) 1993-12-04 1993-12-04 Effective light emission diodes with modified window layers

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP93119563 1993-12-04
DE9319416U DE9319416U1 (en) 1993-12-04 1993-12-04 Effective light emission diodes with modified window layers

Publications (1)

Publication Number Publication Date
DE9319416U1 true DE9319416U1 (en) 1994-04-07

Family

ID=25961540

Family Applications (1)

Application Number Title Priority Date Filing Date
DE9319416U Expired - Lifetime DE9319416U1 (en) 1993-12-04 1993-12-04 Effective light emission diodes with modified window layers

Country Status (1)

Country Link
DE (1) DE9319416U1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0691689A1 (en) * 1994-07-08 1996-01-10 Mitsubishi Cable Industries, Ltd. Semiconductor light emitting element
EP0727828A2 (en) * 1995-02-20 1996-08-21 Mitsubishi Cable Industries, Ltd. Semiconductor light emitting element

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0691689A1 (en) * 1994-07-08 1996-01-10 Mitsubishi Cable Industries, Ltd. Semiconductor light emitting element
US5631475A (en) * 1994-07-08 1997-05-20 Mitsubishi Cable Industries, Ltd. Semiconductor light emitting element
EP0727828A2 (en) * 1995-02-20 1996-08-21 Mitsubishi Cable Industries, Ltd. Semiconductor light emitting element
EP0727828A3 (en) * 1995-02-20 1997-07-30 Mitsubishi Cable Ind Ltd Semiconductor light emitting element

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